• Investigation of e.g. nanoparticles from gas and liquid phase
• Schottky field emission gun (FEG)
• Max. acceleration voltage 200 kV- resulting electron wavelength: 2.51 pm
• Super twin lens CS 1.2 mm
• Point resolution 0.23 nm
• Information limit: 0.15 nm
• For imaging: Gatan Multiscan CCD camera model 794IF
• For analytical TEM-methods (static and scanning modes): Gatan Gif2001 - electron spectrometer system with Gatan Multiscan CCD camera model 794
• Energy resolution about 1 eV
• EDX system: Tecnai-30(ST)
• Fishione: High angle anular darkfield detector
• Pressure at sample: 10^-6 to 10^-7 mbar
• Typical sample thickness: < 50 nm, 10 nm perfect, preparation e.g. with PIPS,
• Max. TEM-grid diameter: 3 mm
• Fishione Ar-O-plasma cleaner for sample and sample holder cleaning

• Fei single tilt holder
• Fei double tilt holder
• Fishione thomopraphy single tilt holder
• Gatan cooling holder (T_min = 80 K)
• Gatan vacuum transfer holder
• Nanofactory: combined scanning tunneling microscope
• Nanofactory: combined atomic force microscope
• Gatan Heating sample holder for temperatures up to 1000°C

• Xplore3D
• Inspect3D
• Mac Tempas
• TrueImage

• Precharacterisation of samples for HR-TEM, microscope for teaching, service measurements
• Acceleration voltage 20-120 kV
• Thermal LaB₆ cathode
• Oxford EDX system for quantitative element analysis, max. resolution 0.5 % for element analysis (Isis and Inca software)
• Hamamatsu optical CCD camera with "Item" software
• Nanoprobe scanning option
• Secondary electron detector
• Dark field detector
• Pressure at sample: 10^-6 mbar

• Philips single tilt holder
• Philips double tilt holder
• Low background sample holder (especially for EDX)
• Gatan cooling holder (T_min = 80 K)
• Nanofactory: combined scanning tunneling microscope and sample holder
• Nanofactory: combined atomic force microscope and sample holder
• Gatan Heating sample holder for temperatures up to 1000°C

• TEM for single nanoparticle / -wire I(U)-characteristics, shear modulus of nanopillars
• acceleration voltage 20-120 kV
• free lens control
• Gatan image intensifier video camera
• thermal LaB₆ cathode
• nanoprobe scanning option
• secondary electron detector
• dark field detector
• pressure at sample: 10^-6 mbar

• Philips single tilt holder
• Philips double tilt holder
• low background sample holder
• Gatan cooling holder (T_min = 80 K)
• Nanofactory: combined scanning tunneling microscope and sample holder
• Nanofactory: combined atomic force microscope and sample holder
• Gatan Heating sample holder for temperatures up to 1000°C

• LEO 1530 SEM
• Field emission gun (FEG)
• Up to 30 kV acceleration voltage
• Water-cooled lens
• Lateral resolution 1.2nm
• Pressure at sample: 10^-6 mbar
• Max. sample size: lateral 50 mm

• In-lens detector
• SE2 secondary electron detector
• Robinson backscatter detector
• Structural investigations with Oxford Instruments Nordlys EBSD detector
• Chemical composition determination with Oxford Instruments XMAX 80mm² EDX detector

• Raith ELPHY Plus EBL system
• Min. linewidth of 25 nm
• Max write field size 4000²µm²
• Step size: 3 nm @ 200 µm
• Various positive/negative e-beam resists
• Resists with thicknesses up to 600 nm

• 2 different microscopes: Veeco D3000, Multimode
• Maximum scan size: lateral: 90 µm, vertical 1µm
• Imaging of sample topography
• Imaging of magnetic stray fields
• Magnetic field (up to 100 mT) applicable during imaging (perpendicular to the film plane)
• Use of commercially available tips
• Lateral resolution < 5 nm (AFM mode)
• Vertical resolution < 1nm (AFM mode)
• Lateral resolution < 100 nm (MFM mode)

• Large area preparation of periodic nanostructures (lines/dots)
• Usage of a Michelson type interferometer setup
• λ=457.8 nm (Ar Ion Laser)
• Maximum area of 5 cm²
• Periodicity ranging from 300 nm to 2000 nm possible
• Dot sizes of 230 nm possible

• UHV base pressure of < 1 * 10^-10 mbar
• two independent systems
• Low energy electron diffraction (LEED) for surface structure characterisation, IV-LEED for measuring out of plane lattice parameter
• Auger-electron spectroscopy (AES) for chemical characterisation
• Hydrogen and Oxygen rf plasma cleaning (up to 200 W)
• Ar ion etching (100-3000 eV)
• automated temperature control in the range of liquid Nitrogen (77 K) up to 900 K with a stability of +/- 0.5 K
• electron beam evaporation of Fe, Co, Ni, Ag, Pt, Au, Al, Si, W (more possible) in the range from 0.1 nm to ten nm, using rods or crucibles.
• co-evaporation of up to four (normally two) materials, successive evaporation of up to eight (normally 4) materials
• changeable evaporator without breaking main vacuum
• in situ longitudinal magnetooptical Kerr-effect (MOKE) up to +/-120 mT
• in situ superconducting quantum interference device (SQUID)
• transferable sample holders
• in and out of plane angular dependent ferromagnetic resonance (FMR) measurements with cavities (1, 4 and 9 GHz) at fields up to 1.3 T
• in plane FMR from 1.5 to 26.5 GHz in continuous frequencies
• changeable cavities / continuous technique without breaking the main vacuum
• standard sample size: 3.9 x 3.9 x 0.5 mm³, other possible

Photos: UHV-chamber R2D2 - UHV-chamber Bender - in situ MOKE - H-Plasma - O-Plasma

Contact:
Lab. Phone: 0203.379.4413
M. Farle
J. Lindner
F. M. Römer

• Automatic in-plane and out-of-plane angular dependent measurements
• Magnetic field up to 2.2T
• Microwave cavities with quality factors of up to 8000
• Frequency-tunable cavities (8-14GHz)
• Microwave bridges and cavities for L, S, X, K and Q-Band
• Field modulation up to 100kHz
• Sample size up to 4x4mm2 (X-Band)
• Low temperature (5K to RT) helium cryostat for X, K and Q-Band
• High temperature unit for T = 80-800K

• ex situ: Automatic in-plane angular dependent measurements with step resolution < 0.1°
• single ML Fe detection possible
• ex situ fields +/- 60 mT with air coil for high precision small field measurements
• same setup used for in and ex situ MOKE
• typical sample size: 4x4 mm², up to 12x12mm² possible
• using home-made single polarisation direction detector or commercial two components detector

• In situ electromagnet with up to +/- 200 mT (integrated hall sensor)
• Electron yield and Photon yield detection possible
• Simultaneous detection of conventional and X-ray detected magnetic resonance
• Continuous microwave frequencies (4-18 GHz)
• UHV system compatible to standard beamlines conditions (e.g. BESSY, SLS and ESRF)

• Basic system is a XE – 70
• The z-Pizo is separated from the x-y Pizo which aviod typical AFM-problems
• Maximum scan size lateral : 100µm and vertical 11 µm
• An electrionc damping is used to reduce vibrations
• Possibility to work in three different modes ( AFM / SThM / MFM )

• Imaging the topography of  solid samples
• Lateral and vertical resolution of 1nm can be achived depending on used tips
• Contact and non-contact mode are available

• Imaging the stray field of magnetic samples
• An external magnetic field of 200mT orientated in the sample plain can be applied
• The system gives the possibiliy for an electric connection of the sample
• Magnetic domains can be written in structures

• Imaging the temperature gradient in samples
• The temperature resolution of the system is 1 mK
• Also 3ω measurement are possibel to get information about thermal conductive resistance

• Combination of the SThM with an FMR setup.
• Global and local FMR measurement can be done
• The local resolution for the FMR is 100nm
• Different FMR excitation modes ( spin waves, not aligned ) can be identifed by local measurements

• XRD system specialized on polycrystalline samples, powder samples and nanoparticles
• wide range scans (2 θ) for phase analysis
• Rocking curves (ω) used to quantify grain size and mosaic spread in crystalline materials
• X-ray reflectivity (XRR) for determining thickness, roughness, and density of thin films (<200nm)
• Anode: Cu: non-monochromatized X-rays, with a weighted average wavelength of 0.15418 nm
• Incident beam optics: Automatic Divergent Slit, Mirror for parallel beam
• Sample stages: Spinner (for powder), Capillary Spinner (for particles in solution), IR-Stage (for thin films)
• Detectors: X'Celerator (very fast), Miniprop (for parallel beam optics, XRR)

• Base pressure about 1*10^-6 mbar
• Thermal evaporation
• Possible materials: Au, Cu, Ag, …
• Thicknesses up to several hundred nanometers possible
• Thickness determination via a quartz crystal balance
• Evaporation rates up to 0.5 nm/s
• Sample sizes up to 5 cm

• Measurement of the polar Kerr-effect
• Magnetic fields up to ± 2T (bipolar power supply)
• Rotation of the sample possible (magnetic field in-plane/out-of-plane/arbitrary angles)
• Signal of a single monolayer of Co easily detectable
• laser spot size: about 1 mm²
• max. sample size: several cm²

• Detection of the resistance change by means of lock-in technique and/or dc measurement
• Possibility to measure the resistance in dependency of the dc current or in dependency of the magnetic field
• Measurement at room temperature with heating possibility (up to 80 °C)
• Measurement geometries: magnetic field perpendicular or parallel to the film plane
• In-plane geometry: magnetic field parallel or transversal to the long wire axis
• Injecting current: ac current (in the range of nA to μA), dc current (in the range of nA to mA) or a combination of both
• Two self-made resistance bridges optimized for low resistances (under 20 Ω) and higher resistances (in the order of kΩ)
• DC resistance measurements for any typical resistance possible
• Possibility of evacuate the sample tube (isolation vacuum of 10^-3 mbar)
• Measurement of the temperature near the sample (ΔT = 20 mK)
• Maximum field range: -2 T to +2 T
• Resolution limit: ΔR/R ≈ 10^-5
• Usage of 16-pole chip carriers
• Possibility to irradiate microwaves with a semi-rigid cable in the frequency range of 1-20 GHz with powers up to 1 W

• AC resistance measurement with an accuracy of up to ΔR/R=1E-6
• Measurements are performed with currents in the nA-µA range
• Resistances up to 2 MΩ can be measured
• Temperature range from 1.4 K to room temperature
• Magnetic fields up to ±5 T are applicable in polar, transverse or longitudinal geometry
• usage of 16-pole chip carriers

• Base pressure < 4*10^-10 mbar
• 2 four pocket electron beam evaporators (simultaneous operation possible)
• Typical materials: Fe, Co, Ni, Gd, Cu, Al, Au, C, Pt, Pd, Cr, Ti,...
• Multilayers (Co/Pt, Co/Ni, …) and alloys possible
• Sample temperature during evaporation in the range of 20°C to 250°C
• Ar ion etching ( up to 3 keV energy ) to clean surfaces or to etch structures after EBL with negative resist
• Typical total thickness of 5-30 nm, single layers of multilayers in the monolayer range. Maximum: some hundred nm
• Feedback control of evaporation rate via thickness determination by two quartz crystal balances
• Typical evaporation rates in the range of 0.005 to 0.1 nm/s
• Sample sizes up to 2 cm

• Gatan Model 691 with dual ion sources for double sided milling
• milling angles between 0° and 10°
• production of large, clean, electron transparent areas (typical: 1mm²)
• sample reducable to thicknesses of about 50 +/- 10 nm
• typically used for metallic bulk samples, isolating / semiconducting samples possible
• max. start thickness: 100 nm
• preparation under 10^-4 mbar Ar vacuum condition

• Schaefer arc melting oven
• Ar atmosphere at ambient pressure
• Temperatures up to 2000°C
• watercooled Cu-cruicible
• usable for almost all metals for producing Heusler alloys

• Well: Precision diamant wire saw Type: 3242
• minimum diamant cutting wire diameter of about 0.2 mm
• cut width of 0.1 mm possible
• usable for all non smearing materials

• Wirtz WoCo50p diamant saw for materials
• maximum cutting depth: 10 mm
• maximuum blade diameter: 120 mm
• usable for all non smearing materials


• Buehler grinder polisher type Phoenix Beta
• dual sliding and polishing machine
• used for pre-preparation for PIPS

• Gatan ultrasonic disc cutter model 601
• for milling 3 mm discs for TEM samples


• Gatan precision dimple grinder model 656
• pre-preparation for PIPS

• Equipped with all the material needed for the synthesis of different kinds of nanoparticles
• Particles can be made of noble metals (Au, Ag, Pt), semiconductors (CdSe) or magnetic materials (Fe_xO_y, Co, Fe, Ni)
• Argon-vacuum Schlenk line (Avitec, France) and more glass material for the synthesis of air-sensitive nanoparticles (schlenk tubes, flasks, Fischer-Porter bottles, distillation sytems etc)
• Glovebox (<1ppm oxygen)
• Centrifuges (4000 and 14000rpm)
• Thermostatic waterbath
• Vacuum oven up to 180°C at 10^-2 mbar
• Analytical balances