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Cleanroom
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Secondary electron microscope (SEM), e-beam lithography (EBL) |
- LEO 1530 SEM
- Field emission gun (FEG)
- Up to 30 kV acceleration voltage
- Water-cooled lens
- Lateral resolution 1.2nm
- Pressure at sample: 10-6 mbar
- Max. sample size: lateral 50 mm
Detectors:
- In-lens detector
- SE2 secondary electron detector
- Robinson backscatter detector
- Structural investigations with Oxford Instruments Nordlys EBSD detector
- Chemical composition determination with Oxford Instruments XMAX 80mm² EDX detector
EBL:
- Raith ELPHY Plus EBL system
- Min. linewidth of 25 nm
- Max write field size 4000²µm²
- Step size: 3 nm @ 200 µm
- Various positive/negative e-beam resists
- Resists with thicknesses up to 600 nm
Photos: Workplace - SEM- Inside SEM
Links: Virtual SEM
Contact:
M. Farle
N. Reckers
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Atomic force microscope
/ magnetic force microscope |
- 2 different microscopes: Veeco D3000, Multimode
- Maximum scan size: lateral: 90 µm, vertical 1µm
- Imaging of sample topography
- Imaging of magnetic stray fields
- Magnetic field (up to 100 mT) applicable during imaging (perpendicular to the film plane)
- Use of commercially available tips
- Lateral resolution < 5 nm (AFM mode)
- Vertical resolution < 1nm (AFM mode)
- Lateral resolution < 100 nm (MFM mode)
Photos: Cleanroom AFM/MFM -Applied field AFM/MFM workplace -Applied field AFM/MFM
Contact:
M. Farle
J. Lindner
C. Wirtz
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Interference lithography for periodic nanostructures |
- Large area preparation of periodic nanostructures (lines/dots)
- Usage of a Michelson type interferometer setup
- λ=457.8 nm (Ar Ion Laser)
- Maximum area of 5 cm²
- Periodicity ranging from 300 nm to 2000 nm possible
- Dot sizes of 230 nm possible
Photos: Interference lithography setup
Contact:
M. Farle
J. Lindner
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