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DTSTART:19700329T020000
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UID:ude20180207153000
CLASS:PUBLIC
SUMMARY:2D MoS2 grown by MOCVD for optoelectronic applications
DTSTART;TZID=Europe/Berlin:20180207T153000
DTEND;TZID=Europe/Berlin:20180207T170000
DTSTAMP:20180207T153000Z
LOCATION;ENCODING=QUOTED-PRINTABLE:Campus Campus Duisburg : LT 227
CONTACT:Dr. Werner Prost ()
DESCRIPTION:Dr. Werner Prost ()
2D MoS2 grown by MOCVD for optoelectronic applications
Prof. Dr. MICHAEL HEUKEN
For the controlled fabrication of large-area 2D materials, highproductivity
MOCVD systems are attractive allowing uniform growth on a
high number of large substrates. Defined precursor fluxes and advanced
temperature control and homogeneity enable precise and reproducible
deposition processes. We report on the optimization of MoS2 growth on
sapphire with respect to crystal quality and homogeneous substrate
coverage using an AIXTRON hot-wall MOCVD reactor in a 10 x 2 in
configuration. Molybdenum hexacarbonyl (MCO) and ditertbutyl sulfide
(DTBS) are used as Mo and S sources, respectively [1].

[1] M. Marx, A. Grundmann, H. Kalisch, A. Vescan, D. Andrzejewski, T. Kümmell, G.
Bacher, Y.-R. Lin, and M. Heuken; Photonik West, San Francisco, 2017.
Wednesday, 7. February 2018
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