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Dipl.-Ing. Peter Velling

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Die folgenden Publikationen sind in der Online-Universitätsbibliographie der Universität Duisburg-Essen verzeichnet. Weitere Informationen finden Sie gegebenenfalls auch auf den persönlichen Webseiten der Person.

    Artikel in Zeitschriften

  • Alkeev, Nikolay V.; Averin, Stanislav V.; Dorofeev, Aleksey A.; Velling, Peter; Khorenko, E.; Prost, Werner; Tegude, Franz-Josef
    Sequential mechanism of electron transport in the resonant tunneling diode with thick barriers
    In: Semiconductors Jg. 41 (2007) Nr. 2, S. 227 - 231
    Online Volltext: dx.doi.org/
  • Schulze-Kraasch, Folkert; Velling, Peter; Prost, Werner
    Characterisation of ultra-thin III/V-heterostructures by convergent-beam-electron- and high-resolution-X-ray-diffraction
    In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology Jg. 110 (2004) Nr. 2, S. 161 - 167
    Online Volltext: dx.doi.org/
  • Alkeev, Nikolay V.; Lyubchenko, Vladimir E.; Velling, Peter; Khorenko, E.; Prost, Werner; Tegude, Franz-Josef
    Equivalent circuit of a resonant tunnel InGaAs/InAlAs diode operating at millimetric waves
    In: Journal of Communications Technology and Electronics Jg. 49 (2004) Nr. 7, S. 833 - 838
  • Neumann, Stefan; Velling, Peter; Prost, Werner; Tegude, Franz-Josef;
    Growth and characterization of InAlP/InGaAs double barrier RTDs
    12th International Conference on Metalorganic Vapour Phase Epitaxy (MOVPE), Lahaina, Hawaii, USA, 30.05.2004 - 04.06.2004,
    In: Journal of Crystal Growth Jg. 272 (2004) Nr. 1-4, S. 555 - 558
    Online Volltext: dx.doi.org/
  • Neumann, Stefan; Bakin, Andrey; Velling, Peter; Prost, Werner; Wehmann, Hergo Heinrich; Schlachetzki, Andreas; Tegude, Franz-Josef;
    Growth of III/V resonant tunnelling diode on Si substrate with LP-MOVPE
    Eleventh International Conference on MOVPE XI; Berlin, Germany; 3 - 7 June 2002,
    In: Journal of Crystal Growth Jg. 248 (2003) S. 380 - 383
    Online Volltext: dx.doi.org/
  • Schlothmann, Bernd Josef; Bertenburg, Ralf M.; Agethen, Michael; Velling, Peter; Brockerhoff, Wolfgang; Tegude, Franz-Josef;
    Two-dimensional physical simulation of InGaAs/InP heterostructure bipolar transistors
    6th International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, EXMATEC 2002; Budapest; Hungary; 26 - 29 May 2002,
    In: Physica Status Solidi (C): Current Topics in Solid State Physics (2003) Nr. 3, S. 922 - 927
    Online Volltext: dx.doi.org/
  • Velling, Peter
    A comparative study of GaAs- and InP-based HBT growth by means of LP-MOVPE using conventional and non gaseous sources
    In: Progress in Crystal Growth and Characterization of Materials Jg. 41 (2000) Nr. 1-4, S. 85 - 131
    Online Volltext: dx.doi.org/
  • Spieler, Jochen; Kippenberg, Thomas; Krauß, J.; Kiesel, Peter; Döhler, Gottfried H.; Velling, Peter; Prost, Werner; Tegude, Franz-Josef
    Electro-optical examination of the band structure of ordered InGaAs
    In: Applied Physics Letters (APL) Jg. 76 (2000) Nr. 1, S. 88 - 90
    Online Volltext: dx.doi.org/
  • Velling, Peter; Agethen, Michael; Prost, Werner; Tegude, Franz-Josef
    InAlAs/InGaAs/InP heterostructures for RTD and HBT device applications grown by LP-MOVPE using non-gaseous sources
    In: Journal of Crystal Growth Jg. 221 (2000) Nr. 1-4, S. 722 - 729
    Online Volltext: dx.doi.org/
  • Keiper, Dietmar; Velling, Peter; Prost, Werner; Agethen, Michael; Tegude, Franz-Josef; Landgren, Gunnar
    Metalorganic vapour phase epitaxy growth of InP-based heterojunction bipolar transistors with carbon doped InGaAs base using tertiarybutylarsine and tertiarybutylphosphine in N₂ ambient
    In: Japanese Journal of Applied Physics Jg. 39 (2000) Nr. 11, S. 6162 - 6165
    Online Volltext: dx.doi.org/
  • Hilburger, Ulrich; Fix, Walter; Mayer, R.; Geißelbrecht, Wolfgang; Malzer, Stefan; Velling, Peter; Prost, Werner; Tegude, Franz-Josef; Döhler, Gottfried H.
    Extension of the epitaxial shadow mask MBE technique for the monolithic integration and in situ fabrication of novel device structures
    In: Journal of Crystal Growth Jg. 201-202 (1999) S. 574 - 577
    Online Volltext: dx.doi.org/
  • Kopperschmidt, P.; Senz, S T.; Scholz, R.; Kästner, G.; Gösele, U.; Velling, Peter; Prost, Werner; Tegude, Franz-Josef; Gottschalch, V.; Wada, K.
    Strain Relaxation During Heteroepitaxy on Twist-Bonded Thin Gallium Arsenide Substrates
    In: MRS (Materials Research Society) Proceedings Jg. 535: III-V and IV-IV Materials and Processing Challenges for Highly Integrated Microelectronics and Optoelectronics (1999) S. 45
    Online Volltext: dx.doi.org/
  • Velling, Peter; Janßen, Guido; Agethen, Michael; Prost, Werner; Tegude, Franz-Josef
    InGaP/GaAs hole barrier asymmetry determined by (0 0 2) X-ray reflections and p-type DB-RTD hole transport
    In: Journal of Crystal Growth Jg. 195 (1998) Nr. 1-4, S. 117 - 123
    Online Volltext: dx.doi.org/
  • Velling, Peter; Fix, Walter; Geißelbrecht, Wolfgang; Prost, Werner; Döhler, Gottfried H.; Tegude, Franz-Josef
    InGaP/GaAs shadow-mask for optoelectronic integration and MBE regrowth
    In: Journal of Crystal Growth Jg. 195 (1998) Nr. 1-4, S. 490 - 494
    Online Volltext: dx.doi.org/
  • Lindner, A.; Velling, Peter; Prost, Werner; Wiersch, A.; Kuphal, Eckart; Burchard, A.; Magerle, Robert; Deicher, Manfred; Tegude, Franz-Josef;
    The role of hydrogen in low-temperature MOVPE growth and carbon doping of In₀.₅₃Ga₀.₄₇As for InP-based HBT
    8th International Conference on Metalorganic Vapour Phase Epitaxy (MOVPE) (IC MOVPE), Cardiff, U.K., 09.06.1996 - 13.06.1996,
    In: Journal of Crystal Growth Jg. 170 (1997) Nr. 1-4, S. 287 - 291
    Online Volltext: dx.doi.org/

    • Beiträge in Sammelwerken und Tagungsbänden

  • Alkeev, Nikolay V.; Velling, Peter; Khorenko, E.; Prost, Werner; Tegude, Franz-Josef
    Resonant tunneling diode immedunce dependence analysis
    In: Fifth International Kharkov Symposium on Physics and Engineering of Microwaves, Millimeter, and Submillimeter Waves: Symposium Proceedings / MSMW'04; Kharkov, Ukraine; 21 - 26 June 2004 / Kostenko, A.; Nosich, A.I.; Yakovenko, V.F. (Hrsg.) Jg. 2 2004, S. 566 - 568
    Online Volltext
  • Schneider, Marc; Reimann, Thorsten; Heinzelmann, Robert; Stöhr, Andreas; Velling, Peter; Neumann, S.; Bertenburg, Ralf M.; Tegude, Franz-Josef; Jäger, Dieter
    A novel 1.55µm HBT-Electroabsorption modulator
    In: Proceedings of the International Topical Meeting on Microwave Photonics (MWP `01) / MWP `01, 7-9 Jan. 2002, Long Beach, CA, USA 2002, S. 21 - 24
    Online Volltext: dx.doi.org/
  • Agethen, Michael; Schüller, Silja; Velling, Peter; Brockerhoff, Wolfgang; Tegude, Franz-Josef
    Consistent small-signal and rf-noise parameter modelling of carbon doped InP/InGaAs HBT
    In: International IEEE Microwave Symposium Digest / MTT-S 2001; Phoenix, United States; 20 - 25 May 2001 Jg. 1 2001, S. 1765 - 1768
    Online Volltext: dx.doi.org/
  • Otten, W.; Glösekötter, Peter; Velling, Peter; Brennemann, Andreas; Prost, Werner; Goser, Karl F.; Tegude, Franz-Josef
    InP-based monolithically integrated RTD/HBT MOBILE for logic circuits
    In: 13th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM 2001; Nara, Japan; 14.05.2001 - 18.05.2001 2001, S. 232 - 235
    Online Volltext: dx.doi.org/
  • Reimann, Thorsten; Schneider, Markus; Velling, Peter; Neumann, Stefan; Agethen, Michael; Bertenburg, Ralf M.; Heinzelmann, Robert; Stöhr, Andreas; Jäger, Dieter; Tegude, Franz-Josef
    Integration of heterostructure bipolar transistor and electroabsorption waveguide modulator based on a multifunctional layer design for 1.55μm
    In: 13th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM 2001; Nara, Japan; 14.05.2001 - 18.05.2001 2001, S. 440 - 443
    Online Volltext: dx.doi.org/
  • Glösekötter, Peter; Pacha, Christian; Goser, Karl F.; Wirth, Gilson Inácio; Prost, Werner; Auer, Uwe; Agethen, Michael; Velling, Peter; Tegude, Franz-Josef
    Digital circuit design based on the resonant-tunneling-hetero-junction-bipolar-transistor
    In: Proceedings of the 13th Symposium on Integrated Circuits and Systems Design / SBCCI 2000; Manaus, Brazil; 18 - 24 September 2000 2000, S. 150 - 155
    Online Volltext: dx.doi.org/
  • Kim, Samuel O.; Velling, Peter; Auer, Uwe; Agethen, Michael; Prost, Werner; Tegude, Franz-Josef
    High f/sub T/, high current gain InP/InGaAs : C HBT grown by LP-MOVPE with non-gaseous sources
    In: International Conference on Indium Phosphide and Related Materials: Conference Proceedings / Williamsburg, USA; 14 -18 May 2000 2000, S. 470 - 472
    Online Volltext: dx.doi.org/
  • Kim, Samuel O.; Velling, Peter; Agethen, Michael; Reimann, Thorsten; Prost, Werner; Tegude, Franz-Josef
    InP-Based HBT with Graded InGaAlAs Base Layer Grown by LP-MOVPE
    In: Proceedings of the European GaAs and other Semiconductor Application Symposium / GAAS AS 2000; Paris, France; 02.10.2000 - 03.10.2000 2000
    Online Volltext
  • Velling, Peter; Agethen, Michael; Herenda, E.; Prost, Werner; Stolz, W.; Tegude, Franz-Josef
    LP-MOVPE Growth of Carbon Doped In0.48Ga0.52P/GaAs HBT Using an All-Liquid-Source Configuration
    In: 26th International Symposium on Compound Semiconductors / ISCS 2000; Berlin, Germany; 22.08.2000 - 26.08.2000 2000
  • Fix, W.; Welker, M.; Geisselbrecht, W.; Kiesel, P.; Döhler, G.H.; Velling, Peter; Prost, Werner; Tegude, Franz-Josef
    A monolithically integrated smart pixel based on a photoconductive switch and a n-i-p-i modulator
    In: Conference on Lasers and Electro-Optics / CLEO '99; Baltimore, USA; 23.05.1999 - 28.05.1999 1999
    Online Volltext: dx.doi.org/
  • Velling, Peter; Agethen, Michael; Herenda, E.; Prost, Werner; Stolz, W.; Tegude, Franz-Josef
    LP-MOVPE grown GaAs- and InP-based HBTs using all-liquid alternative sources
    In: Proceedings of the 11th International Conference on Indium Phosphide and Related Materials / IPRM`99; Davos, Switz; 16 -20 May 1999 1999, S. 467 - 470
    Online Volltext: dx.doi.org/
  • Prost, Werner; Auer, Uwe; Velling, Peter; Janßen, Guido; Agethen, Michael; Haase, M.; Reuter, Ralf; Lakner, Hubert; Tegude, Franz-Josef
    Novel Monolithic RTD/3-Terminal Device Combinations on s.i. InP for Frequency Multiplication
    In: Proceedings of the State-of-the-Art Program of Compound Semiconductors / SOTAPOCS 1997, Montreal, Canada, 04.05.1997 - 09.05.1997 1997, S. 229 - 241
  • Velling, Peter; Janßen, Guido; Agethen, Michael; Prost, Werner; Auer, Uwe; Reuter, Ralf; Tegude, Franz-Josef
    On the design and modelling of novel 3-D integrated RTD/HBT device frequency multiplier circuits
    In: Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications / EDMO 1996; Leeds, UK; 25 - 26 November 1996 1996, S. 176 - 181
    Online Volltext: dx.doi.org/

    • Vorträge

  • Prost, Werner; Neumann, Stefan; Velling, Peter; Tegude, Franz-Josef;
    LP-MOVPE growth for high-speed electronic devices on InP
    10th European Workshop on MOVPE and Rel. Growth Techniques (EW MOVPE), Leece, Italy, 08.06.2003 - 11.06.2003,
    Leece, Italy (2003)
  • Ehrich, S.; Agethen, Michael; Velling, Peter; Brennemann, Andreas; Bertenburg, Ralf M.; Brockerhoff, Wolfgang; Tegude, Franz-Josef;
    Scaling of Small-Signal and RF-Noise Parameters with Respect to the Emitter-Area of Single HBT based on InP
    14th Workshop on Semiconductor Modeling and Simulation of Electron Devices (MSED), Barcelona, Spain, 16.10.2003 - 17.10.2003,
    Barcelona, Spain (2003)
  • Schlothmann, B.; Bertenburg, Ralf M.; Agethen, Michael; Velling, Peter; Brockerhoff, Wolfgang; Tegude, Franz-Josef;
    RF-Simulation of InGaAs/InP Heterostructure Bipolar Transistors
    13th Workshop on Physical Simulation of Semiconductor Devices (PSSD), Ilkley, West Yorkshire, U.K., 25.03.2002 - 26.03.2002,
    Ilkley, U.K. (2002)
  • Spieler, J.; Blache, R.; Lese, A.; Kiesel, P.; Döhler, G.H.; Neumann, S.; Velling, Peter; Prost, Werner; Tegude, Franz-Josef;
    Spontaneous Group III and V Superlattice Ordering in InGaAsP
    26th International Conference on the Physics of Semiconductors (ICPS), Edingburgh, U.K., 29.07.2002 - 02.08.2002,
    Edingburgh, U.K. (2002)
  • Spieler, J.; Blache, R.; Lese, A.; Kiesel, P.; Döhler, G.H.; Neumann, S.; Velling, Peter; Prost, Werner; Tegude, Franz-Josef;
    Spontaneous Group III and V Superlattice Ordering in InGaAsP
    International Conference on Signal Processing (ICSP), Beijing, China, 26.08.2002 - 30.08.2002,
    Beijing, China (2002)
  • Agethen, Michael; Schüller, S.; Velling, Peter; Brockerhoff, Wolfgang; Tegude, Franz-Josef;
    Carbon Doped InP/InGaAs HBT : Consistent Small_Signal and RF-Noise Modelling and Characterization
    Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Cagliari, Italy, 27.05.2001 - 30.05.2001,
    Cagliari, Italy (2001)
  • Reimann, Thorsten; Schneider, Marc; Velling, Peter; Neumann, S.; Agethen, Michael; Bertenburg, Ralf M.; Heinzelmann, Robert; Stöhr, Andreas; Jäger, Dieter; Tegude, Franz-Josef;
    Demonstration von Heterostruktur-Bipolartransistoren und Elektroabsorptionsmodulatoren auf der Basis eines multifunktionalen Schichtdesigns
    65. Physikertagung und Frühjahrstagung des Arbeitskreises Festkörperphysik der DPG, Hamburg, Germany,
    Hamburg (2001)
    Online Volltext
  • Reimann, Thorsten; Schneider, Marc; Velling, Peter; Neumann, S.; Agethen, Michael; Bertenburg, Ralf M.; Heinzelmann, Robert; Stöhr, Andreas; Jäger, Dieter; Tegude, Franz-Josef;
    Heterostructure bipolartransistor combining electroabsorption waveguide modulator based on a multifunctional layer design for 1.55µm
    12th IEEE III-V Semiconductor Device Simulation Workshop in combination with the HBT Workshop, Duisburg, Germany, 2000,
    Duisburg (2000)
    Online Volltext
  • Prost, Werner; Velling, Peter; Janßen, Guido; Auer, Uwe; Brennemann, Andreas; Glösekötter, P.; Goser, K.F.; Tegude, Franz-Josef;
    Resonant-Tunnelling 3-Terminal Devices for High-Speed Logic Application
    24th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Aegean Sea, Greece, 29.05.2000 - 02.06.2000,
    Aegean Sea, Greece (2000)
  • Velling, Peter; Agethen, Michael; Herenda, E.; Prost, Werner; Stolz, W.; Tegude, Franz-Josef;
    All Liquid Source Growth of Carbon Doped In0.53Ga0.47As/InP HBT by Means of LP-MOVPE
    8th Europ. Workshop on MOVPE and Rel. Growth Techniques (EW MOVPE), Prag, Czech Republic, 08.06.1999 - 11.06.1999,
    Prag, Czech Republic (1999)
  • Velling, Peter; Haase, M.; Agethen, Michael; Janßen, Guido; Prost, Werner; Tegude, Franz-Josef;
    3D-Integration of Quantum-Effect Devices (RTD) in HBT's by Means of LP-MOVPE
    7th European Workshop on MOVPE and Rel. Growth Techniques (EW MOVPE), Berlin, Germany, 08.06.1997 - 11.06.1997,
    Berlin, Germany (1997)
  • Prost, Werner; Haase, M.; Velling, Peter; Liu, Q.; Tegude, Franz-Josef;
    HR XRD for the Analysis of Ultra-Thin Centro-Symmetric Strained DB-RTD Heterostructures
    European Materials Research Conference (E-MRS), Strasbourg, France, 16.06.1997 - 20.06.1997,
    Strasbourg, France (1997)