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Bismarckstr. 81 (BA)
47057 Duisburg
47057 Duisburg
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BA 112
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Wissenschaftliche/r Mitarbeiter/in, Werkstoffe der Elektrotechnik
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2024 SS
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2023 WS
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2023 SS
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2022 WS
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2022 SS
Die folgenden Publikationen sind in der Online-Universitätsbibliographie der Universität Duisburg-Essen verzeichnet. Weitere Informationen finden Sie gegebenenfalls auch auf den persönlichen Webseiten der Person.
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Effect of growth temperature on the microstructure and properties of epitaxial MoS₂ monolayers grown by metalorganic chemical vapor depositionIn: Journal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films Jg. 42 (2024) Nr. 2, 022201Online Volltext: dx.doi.org/ (Open Access)
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Impact of synthesis temperature and precursor ratio on the crystal quality of MOCVD WSe₂ monolayersIn: Nanotechnology Jg. 34 (2023) Nr. 20, 205602Online Volltext: dx.doi.org/
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Silver nanowire electrodes for transparent light emitting devices based on WS₂ monolayersIn: Nanotechnology Jg. 34 (2023) Nr. 28, 285201Online Volltext: dx.doi.org/ (Open Access)
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Role of Surface Adsorbates on the Photoresponse of (MO)CVD-Grown Graphene–MoS2 Heterostructure PhotodetectorsIn: ACS Applied Materials & Interfaces Jg. 14 (2022) Nr. 30, S. 35184 - 35193Online Volltext: dx.doi.org/
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Transfer-free, scalable photodetectors based on MOCVD-grown 2D-heterostructuresIn: 2D Materials Jg. 8 (2021) Nr. 4, 045015Online Volltext: dx.doi.org/ (Open Access)
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Flexible Large-Area Light-Emitting Devices Based on WS₂ MonolayersIn: Advanced Optical Materials Jg. 8 (2020) Nr. 20, 2000694Online Volltext: dx.doi.org/ (Open Access)
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MOVPE of Large-Scale MoS₂/WS₂, WS₂/MoS₂, WS₂/Graphene and MoS₂/Graphene 2D-2D Heterostructures for Optoelectronic ApplicationsIn: MRS Advances / Materials Research Society (Hrsg.) Jg. 5 (2020) Nr. 31-32, S. 1625 - 1633Online Volltext: dx.doi.org/
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H2S-free Metal-Organic Vapor Phase Epitaxy of Coalesced 2D WS2 Layers on SapphireIn: MRS Advances / Materials Research Society (Hrsg.) Jg. 4 (2019) Nr. 10, S. 593 - 599Online Volltext: dx.doi.org/
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Scalable Large-Area p-i-n Light-Emitting Diodes Based on WS₂ Monolayers Grown via MOCVDIn: ACS Photonics Jg. 6 (2019) Nr. 8, S. 1832 - 1839Online Volltext: dx.doi.org/
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WS₂ monolayer-based light-emitting devices in a vertical p-n architectureIn: Nanoscale Jg. 11 (2019) Nr. 17, S. 8372 - 8379Online Volltext: dx.doi.org/
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Improved luminescence properties of MoS₂ monolayers grown via MOCVD: Role of pre-treatment and growth parametersIn: Nanotechnology Jg. 29 (2018) Nr. 29, S. 295704Online Volltext: dx.doi.org/
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Metalorganic Vapor-Phase Epitaxy Growth Parameters for Two-Dimensional MoS₂In: Journal of Electronic Materials (JEM) Jg. 47 (2018) Nr. 2, S. 910 - 916Online Volltext: dx.doi.org/ (Open Access)
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Carrier transfer across a 2D-3D semiconductor heterointerface : the role of momentum mismatchIn: Physical Review B Jg. 95 (2017) Nr. 8, S. 081304Online Volltext: dx.doi.org/
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Large-area MoS 2 deposition via MOVPEIn: Journal of Crystal Growth Jg. 464 (2017) S. 100 - 104Online Volltext: dx.doi.org/
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Gate control of carrier distribution in k-space in MoS2 monolayer and bilayer crystalsIn: Physical Review B: Condensed matter and materials physics Jg. 91 (2015) Nr. 12, S. 125305Online Volltext: dx.doi.org/
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Electrically driven single photon emission from a CdSe/ZnSSe single quantum dot at 200 KIn: Applied Physics Letters (APL) Jg. 105 (2014) Nr. 9, S. 091102Online Volltext: dx.doi.org/
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Electrically driven single photon emission from a CdSe/ZnSSe/MgS semiconductor quantum dotIn: Physica Status Solidi (C): Current Topics in Solid State Physics Jg. 11 (2014) Nr. 7-8: Special Issue: 16th International Conference on II–VI Compounds and Related Materials (II–VI 2013) • E-MRS 2013 Spring Meeting – Symposium C, S. 1256 - 1259Online Volltext: dx.doi.org/
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High-frequency electrical charge and spin control in a single InGaAs quantum dotIn: Physical Review B: Condensed matter and materials physics Jg. 85 (2012) Nr. 3, S. 035325Online Volltext: dx.doi.org/
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P-Si/n-ZnO nanocrystal heterojunction light emitting deviceIn: Applied Physics Express Jg. 5 (2012) Nr. 3, S. 035001Online Volltext: dx.doi.org/
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Room temperature single photon emission from an epitaxially grown quantum dotIn: Applied Physics Letters (APL) Jg. 100 (2012) Nr. 6, S. 061114Online Volltext: dx.doi.org/
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Local definition of spin polarization in a semiconductor by micro-scale current loopsIn: Journal of Superconductivity and Novel Magnetism Jg. 23 (2010) Nr. 1, S. 111 - 114Online Volltext: dx.doi.org/
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Radiative recombination dynamics of CdSe/Zn(S,Se)/MgS quantum dots up to room temperatureIn: Physica Status Solidi (B): Basic Solid State Physics Jg. 247 (2010) Nr. 6, S. 1413 - 1415Online Volltext: dx.doi.org/
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Radiative recombination in photoexcited quantum dots up to room temperature: The role of fine-structure effectsIn: Physical Review B: Condensed matter and materials physics Jg. 81 (2010) Nr. 24, S. 241306Online Volltext: dx.doi.org/
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Temperature dependence of radiative recombination in CdSe quantum dots with enhanced confinementIn: JETP Letters Jg. 92 (2010) Nr. 1, S. 57 - 62Online Volltext: dx.doi.org/
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Ultrafast electrical charging and discharging of a single InGaAs quantum dotIn: Applied Physics Letters (APL) Jg. 97 (2010) S. 173108Online Volltext: dx.doi.org/
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All-inorganic light emitting device based on ZnO nanoparticlesIn: Applied Physics Letters (APL) Jg. 94 (2009) Nr. 9, S. 091115Online Volltext: dx.doi.org/
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Electrical injection and optical readout of spin states in a single quantum dotIn: International Journal of Modern Physics B (IJMPB): Condensed Matter Physics etc. Jg. 23 (2009) Nr. 12-13, S. 2826Online Volltext: dx.doi.org/
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Charging of a InAs/GaAs single quantum dot from a n-ZnMnSe spin alignerIn: Physica E: Low-dimensional Systems and Nanostructures Jg. 40 (2008) Nr. 6, S. 2134 - 2137Online Volltext: dx.doi.org/
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Electrical charging of a single quantum dot by a spin polarized electronIn: Applied Physics Letters (APL) Jg. 93 (2008) S. 073107Online Volltext: dx.doi.org/
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Electrically driven ZnO nanoparticle light emitting deviceIn: Electronics Letters Jg. 44 (2008) Nr. 25, S. 1485 - 1487Online Volltext: dx.doi.org/
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Electrically driven single quantum dot emitter operating at room temperatureIn: Applied Physics Letters (APL) Jg. 93 (2008) Nr. 17, S. 173506Online Volltext: dx.doi.org/
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Local control of spin polarization in a semiconductor by microscale current loopsIn: Applied Physics Letters (APL) Jg. 93 (2008) S. 141902Online Volltext: dx.doi.org/
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Room temperature emission from CdSe single quantum dots embedded in high bandgap barrier materialIn: Physica E: Low-dimensional Systems and Nanostructures Jg. 40 (2008) Nr. 6, S. 1938 - 1940Online Volltext: dx.doi.org/
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WS₂ monolayer based light emitting devices fabricated by scalable deposition techniquesIn: Light-Emitting Devices, Materials, and Applications XXIV / Light-Emitting Devices, Materials, and Applications XXIV, 3 - 6 February 2020, San Francisco, United States / Kim, Jong Kyu; Krames, Michael R.; Strassburg, Martin (Hrsg.) 2020 113020POnline Volltext: dx.doi.org/
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Quantum Dot Spintronics : Fundamentals and ApplicationsIn: Magnetic Nanostructures: Spin Dynamics and Spin Transport / Zabel, Hartmut; Farle, Michael (Hrsg.) 2013, S. 235 - 268Online Volltext: dx.doi.org/
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Light-Emitting Devices Based on Direct Band Gap Semiconductor NanoparticlesIn: Inorganic Nanoparticles: Synthesis, Applications, and Perspectives / Altavilla, Claudia; Ciliberto, Enrico (Hrsg.) 2011, S. 109 - 132Online Volltext: dx.doi.org/
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Light-Emitting devices based on direct band gap semiconductor nanoparticlesIn: Inorganic nanoparticles: synthesis, applications, and perspectives / Altavilla, Claudia; Ciliberto, Enrico (Hrsg.) 2011, S. 109 - 132
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All-inorganic light emitting devices based on semiconducting nanoparticlesIn: Photovoltaics and optoelectronics from nanoparticles / Symposium T, "Photovoltaics and Optoelectronics from Nanoparticles", April 5 - 9, 2010, San Francisco, CA, USA / Winterer, Markus; Gladfelter, Wayne L.; Gamelin, Daniel R.; Oda, Shunri (Hrsg.) 2010, S. 55 - 61
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Electrically driven single quantum dot emitter operating at room temperatureIn: Advances in Solid State Physics / Haug, Rolf (Hrsg.) 2009, S. 67 - 78Online Volltext: dx.doi.org/