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Boron-Induced Step Faceting and Stripe Formation on Si(001)

J. B. Hannon, N. C. Bartelt, B. S. Swartzentruber, and G. L. Kellogg

(click on the image to pop up a larger view of the instrument)


A heavily Boron-doped Si(001) surface shows step faceting during cooldown from 1000C to  900C. The Boron, which is bound in the volume of the sample, segregates to the surface during the cooling and decorates the step edges. This results in a change of the step stiffness and step energies and causes the shape change transition that can be observed in the movie
 
Authors: J. B. Hannon, N. C. Bartelt, B. S. Swartzentruber, and G. L. Kellogg
Affiliation: The movie was recorded using the LEEM at Sandia National Labs in Albuquerque, NM (USA)
Website: http://www.sandia.gov/surface_science/glk
Publication: Phys. Rev. Lett. 79, 4226 (1997)

 

 
 

University of Duisburg-Essen | AG Horn-von Hoegen


 
 



Au (5x3.2) Reconstruction Domains grown on Si(111). Courtesy of F. Meyer zu Heringdorf and R. Tromp, IBM.


Growth of Lead on Cu(111). Courtesy of Gary Kellog, Sandia



PEEM Images of Pentacene Islands on Si. Courtesy of F. Meyer zu Heringdorf and R. Tromp, IBM