Review Article

  • “Spot profile analysis low energy electron diffraction of semiconductor growth”, M. Horn-von Hoegen; Zeitschrift für Kristallographie 214, 591-629 und 684-721 (1999) pdf-file

Instrumentation

  • “A new LEED Instrument for Quantitative Spot Profile Analysis”, U. Scheithauer, G. Meyer, and M. Henzler; Surf. Sci. 178, 441–451 (1986) doi
  • “Third-generation cone-shaped SPA-LEED”, P. Zahl and M. Horn von Hoegen; Rev. Sci. Instrum. 73, 2958-2962 (2002)pdf-file
  • “Reciprocal space mapping by spot profile analyzing low energy electron diffraction”, F.-J. Meyer zu Heringdorf and M. Horn von Hoegen; Rev. Sci. Instrum. 76, 085102 (2005) doi
  • “Lost in reciprocal space? Determination of scattering condition in spot profile analysis low energy electron diffraction”, C. Klein, T. Nabbefeld, H. Hattab, D. Meyer, G. Jnawali, M. Kammler, F. Meyer zu Heringdorf, A. Golla-Franz, B.H Müller, Th. Schmidt, M. Henzler, and M. Horn-von Hoegen; Rev. Sci. Instrum. 82, 35111 (2011) doi
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