Prof. Dr. Nils Weimann

Prof. Nils Weimann, Ph.D.

Anschrift
Lotharstr. 55 (LT)
47057 Duisburg
Raum
LT 207
Telefon
+49 203 379 3391
Telefax
+49 203 379 3400
E-Mail
nils.weimann@uni-due.de
Webseite
http://www.uni-due.de/bhe/

Funktionen

  • Universitätsprofessor/in, Bauelemente der Höchstfrequenz-Elektronik

Die folgenden Publikationen sind in der Online-Universitätsbibliographie der Universität Duisburg-Essen verzeichnet. Weitere Informationen finden Sie gegebenenfalls auch auf den persönlichen Webseiten der Person.

Fehler in der Quellverarbeitung

1996

Dipl.-Phys. (M. Sc. Physics), University of Stuttgart

1999

PhD (Electrical Engineering), Cornell University, Ithaca, NY, USA

Member, IEEE

1999 – 2002

Member of Technical Staff, Bell Laboratories, Lucent Technologies (now Nokia), Murray Hill, NJ, USA

2002 – 2012

Technical Manager “Compound Semiconductor Research”, Bell Laboratories, Lucent Technologies (now Nokia), Murray Hill, NJ, USA

2012 – 2017

Research group leader “InP Devices Lab”, Ferdinand-Braun-Institute, Berlin, Germany

2017 –

Professor, head of department High Frequency Electronic Components, Faculty of Engineering, University of Duisburg-Essen

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1996

Artur-Fischer-Preis, 1996 best M.Sc. in Physics, Universität Stuttgart

2005

Young Scientist Award, International Symposium of Compound Semiconductors

Research interests

  • semiconductor heterostructure epitaxy (MOVPE and MBE)
  • compound semiconductor chip technology
  • Resonant Tunneling Diode and Heterojunction Bipolar Transistor design
  • mm-wave and THz circuit design
  • THz applications

Projects

  • DFG SFB/TRR196 MARIE C02 & C11 (2018 - 2028)
  • BMFTR 6G-HUB 6GEM (2021 - 2025)
  • EU JU CHIPS Move2THz (2024 - 2027)
  • NRW MKW terahertz.nrw (2022 - 2026)
  • BMFTR ForLab SmartBeam (2018 - 2022)
  • NRW/EFRE THzIZ (2018 - 2022)
  • DFG research grants
    • 540123186  "Improving InP DHBT linearity for sub-THz broadband operation"
    • 556167353  "Design, Optimization, and Prototyping of Micro-scale THz Communication Systems Powered by Resonant Tunneling Diode-Based Energy Harvesting"
    • 265982007  "Nanowire-Heterojunction Bipolar Transistor (NW-HBT)"
  • DFG major instrumentation
    • 491044589  "electron beam lithography tool for 3D-nanoscale extremely high frequency components"