Scanning Electron Microscopy

• Scanning Electron Microscope 0.05...30 keV with Schottky Emitter and In-Lens-Detector, Resolution 1.2 nm
• Scanning-Electron-Microscope 30 keV

Scanning Force Microscopy

• Two scanning force microscopes for local potential- and current measurements
  (resolution: few µA, 5 mV, < 40 nm)
• Needle sensor scanning force microscope for local current-/voltage measurements
  (resolution: 100 µV, < 100 nm)
• Scanning force microscope for topography and magnetic force measurements
• several Lock-In amplifiers 1 mHz - 200 MHz, 2 nVrms – 1 Vrms
• High frequency signal generators 9 kHz – 40 GHz
• Digital storage oscillograph, scanning rate per channel: 2 GSa/s
• Synthesizer, signal generators
• Box-Car-Integrator

Nanotechnology and Preparation

• Electron beam lithography up to 30 keV, lateral sizes down to 25 nm
• Ultrasonic bonder
• Mask aligner
• Spin coater up to 7000 U/min
• Vacuum oven, Rapid thermal annealer (650 °C), Tube furnace (1100 °C)
• Optical microsopes (1000 x)
• Sputtering system (metals, ferromagnets)
• Evaporation system (thermal, electron beam-assisted)
• Ozon cleaner
• Micro prober

Optical Spectroscopy

• ps/fs-laser system consisting of Nd:YV04 pump laser and mode-locked Ti-Sapphire laser including second and third harmonic generation
  (1.5 ps / 100 fs; > 100 mW @ 240 nm …500 nm; > 1.5 W @ 700 nm … 1000 nm)
• ps/fs-laser system consisting of Nd:YV04 pump laser and mode-locked Ti-Sapphire laser including second harmonic generation
  (1.5 ps / 100 fs; > 50 mW @ 360 nm …500 nm; > 1 W @ 700 nm … 1000 nm)
• Optical parametric oscillator including second harmonic generation
  (100 fs; > 50 mW @ 505 nm … 750 nm; > 100 mW @ 1000 nm …. 1600 nm)
• Pulse picker (single shot … 40 MHz with external trigger)
• Mode-locked Nd:YAG laser including second harmonic generation,
  20W @ 1064 nm, 2W @ 532 nm, 70 ps; fibre pulse compressor 2 W; 5 ps
• Hybrid mode-locked dye laser, 90 mW, 0,8 ps
   
• Streak-camera, time resolution 2 ps
• Micro-Channel-Plate, time resolution < 50 ps
• Continuous flow cryostat for transient Kerr-rotation, spatial resolution < µm,
  magnet field B = 0 T..1.2 T, T = 3 K...300 K
• Bath cryostat T = 1.5 K...300 K
• Closed-cycle cryostat (cryogen free), T = 3 K…300 K

• UV-VIS argon ion laser 25 W VIS, 5 W UV, > 0.1 W @ 275 nm
• Argon ion laser 6 W VIS all-line, 500 mW UV all-line
• Dye laser 420 nm … 700 nm, 1 W @600 nm
• Ti:Sapphire laser (cw) 380 nm – 475 nm (80 mW); 730 nm – 950 nm (800 mW)
• Diode laser 405 nm, 450 nm, 640 nm, 785 nm, >10 mW, cw and optional pulsed excitation (100 ps)
• Continuous flow cryostat for magneto optics, spatial resolution < µm,
  super conducting magnet (B = 0 T.. 5 T, T = 3 K..300 K)
• Continuous flow cryostat for nanooptics / micro-electroluminescence, spatial resolution < µm,
  T = 3 K..300 K
• Monochromators with focus length f = 320 mm … 550 mm, spectral resolution down to ~150 µeV
• Back- and front illuminated CCD-cameras, up to 2048 x 512 pixel
• Photomultiplier 160 nm – 930 nm
• Two-channel gated photon counter: 200 MHz, 10 mV
• Hanbury-Brown-Twiss setup for photon statistics analysis (Avalanche photo diodes with time resolution better than 100 ps)