Welcome to our laboratories

We offer state-of-the-art equipment for the production, processing, and advanced characterization of single-crystal and polycrystalline materials as well as pressed nanomaterials. Please do not hesitate to contact us.

Synthesis

Crystal Growth Furnaces





Methods:​

  • Bridgman
  • Floating Zone
  • Micro-pulling-down

Gloveboxes / Powder-Pressing

tba.

 

Contact

alexander.kunzmann@uni-due.de

Processing

Cutting Machine



 

  • wet cutting, automated
  • max. sample size of Ø75 mm

Diamond Wire Saw

  • cutting variety of materials such as glass, hard rubber, ceramics, plastics, metals, and quartz
  • 0.1 mm to 0.35mm cutting gap. Cutting width with 0.01 mm accuracy

Grinding and Polishing

  • SiC grinding paper up to 4000#

  • diamand suspension and SiO2 treatment for ultra-fine polished surfaces

Autoclave

  • Suitable for hydrogen loading and other reactive gases
  • High-pressure, high-temperature reactor (500 bar / 500 °C)
  • 200 ml vessel, electric heating with water cooling

Minilamp Annealer

  • thermal processing device to rapidly heat and anneal thin films, wafers and small samples using infrared lamps
  • high-vacuum or gas-flow atmosphere
  • room temperature up to 1200 °C
  • eg. dopant activity, crystal defect repair and surface modification

Contact

klara.luenser@uni-due.de

Characterization

Dynacool - PPMS


 

Measurement options: Electrical transport (resistance, magnetoresistance, Hall effect); Thermal transport (thermal conductivity, Seebeck effect)

  • temperature range: 1.8 K - 400 K
  • magnetic field range: 9 T
  • horizontal rotator option
  • high vacuum chamber (below 10-4 Torr)
  • bulk, thin films, nanogranular materials and others

Differential Scanning Calorimetry (DSC)

  • investigation of thermal properties like phase transistions or melting points
  • determination of specific heat capacity
  • from -180 °C to 500 °C
  • heating/cooling rates: 0.001 to 200 K/min

ZEM-3

  • simultaneous measurement of Seebeck coefficient and electrical resistivity (4-probe)
  • 50 °C to 1000 °C
  • low-pressure helium atmosphere
  • diameter or side length 2 - 4 mm, length 5 - 22 mm
  • bulk and thin film

Laser-Flash-Analysis (LFA)

  • Measurement of thermal diffusivity and thermal conductivity
  • Temperature range: -125 °C to 1100 °C, various atmospheres
  • Suitable for solids, coatings and thin films

Usage in cooperation with Prof. Roland Schmechel 

Potentiostat


 

  • electrochemical Analysis

  • output voltage ± 20 V, maximum current ± 400 mA

  • with second sample holder; constructed for smaller sample diameters from 6 to 16 mm

 

 

Contact

sepideh.izadi@uni-due.de