Equipment
Welcome to our laboratories
We offer state-of-the-art equipment for the production, processing, and advanced characterization of single-crystal and polycrystalline materials as well as pressed nanomaterials. Please do not hesitate to contact us.
Synthesis
Crystal Growth Furnaces

Methods:
- Bridgman
- Floating Zone
- Micro-pulling-down
Gloveboxes / Powder-Pressing
tba.
Contact
Processing
Cutting Machine

- wet cutting, automated
- max. sample size of Ø75 mm
Diamond Wire Saw
- cutting variety of materials such as glass, hard rubber, ceramics, plastics, metals, and quartz
- 0.1 mm to 0.35mm cutting gap. Cutting width with 0.01 mm accuracy
Grinding and Polishing
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SiC grinding paper up to 4000#
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diamand suspension and SiO2 treatment for ultra-fine polished surfaces
Autoclave
- Suitable for hydrogen loading and other reactive gases
- High-pressure, high-temperature reactor (500 bar / 500 °C)
- 200 ml vessel, electric heating with water cooling
Minilamp Annealer

- thermal processing device to rapidly heat and anneal thin films, wafers and small samples using infrared lamps
- high-vacuum or gas-flow atmosphere
- room temperature up to 1200 °C
- eg. dopant activity, crystal defect repair and surface modification
Contact
Characterization
Dynacool - PPMS

Measurement options: Electrical transport (resistance, magnetoresistance, Hall effect); Thermal transport (thermal conductivity, Seebeck effect)
- temperature range: 1.8 K - 400 K
- magnetic field range: 9 T
- horizontal rotator option
- high vacuum chamber (below 10-4 Torr)
- bulk, thin films, nanogranular materials and others
Differential Scanning Calorimetry (DSC)

- investigation of thermal properties like phase transistions or melting points
- determination of specific heat capacity
- from -180 °C to 500 °C
- heating/cooling rates: 0.001 to 200 K/min
ZEM-3

- simultaneous measurement of Seebeck coefficient and electrical resistivity (4-probe)
- 50 °C to 1000 °C
- low-pressure helium atmosphere
- diameter or side length 2 - 4 mm, length 5 - 22 mm
- bulk and thin film
Laser-Flash-Analysis (LFA)
- Measurement of thermal diffusivity and thermal conductivity
- Temperature range: -125 °C to 1100 °C, various atmospheres
- Suitable for solids, coatings and thin films
Usage in cooperation with Prof. Roland Schmechel
Potentiostat

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electrochemical Analysis
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output voltage ± 20 V, maximum current ± 400 mA
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with second sample holder; constructed for smaller sample diameters from 6 to 16 mm