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Die folgenden Publikationen sind in der Online-Universitätsbibliographie der Universität Duisburg-Essen verzeichnet. Weitere Informationen finden Sie gegebenenfalls auch auf den persönlichen Webseiten der Person.
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Electrical Properties of the Base-Substrate Junction in Freestanding Core-Shell NanowiresIn: Advanced Materials Interfaces Jg. 9 (2022) Nr. 30,ISSN: 2196-7350Online Volltext: dx.doi.org/ (Open Access)
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Polarity-controlled AlN/Si templates by in situ oxide desorption for variably arrayed MOVPE-GaN nanowiresIn: Journal of Crystal Growth Jg. 566-567 (2021) S. 126162ISSN: 0022-0248; 1873-5002Online Volltext: dx.doi.org/
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There is Plenty of Room for THz Tunneling Electron Devices Beyond the Transit Time LimitIn: IEEE Electron Device Letters Jg. 42 (2021) Nr. 2, S. 224 - 227ISSN: 1558-0563; 0741-3106Online Volltext: dx.doi.org/ (Open Access)
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Tunneling-Related Leakage Currents in Coaxial GaAs/InGaP Nanowire Heterojunction Bipolar TransistorsIn: Physica Status Solidi (B): Basic Solid State Physics Jg. 258 (2021) Nr. 2, S. 2000395ISSN: 1521-3951; 0370-1972Online Volltext: dx.doi.org/ (Open Access)
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A systematic study of Ga- And N-polar GaN nanowire-shell growth by metal organic vapor phase epitaxyIn: CrystEngComm Jg. 22 (2020) Nr. 33, S. 5522 - 5532ISSN: 1466-8033Online Volltext: dx.doi.org/
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Hot electrons in a nanowire hard X-ray detectorIn: Nature Communications Jg. 11 (2020) Nr. 1, S. 4729ISSN: 2041-1723Online Volltext: dx.doi.org/ (Open Access)
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Spatially controlled VLS epitaxy of gallium arsenide nanowires on gallium nitride layersIn: CrystEngComm Jg. 22 (2020) Nr. 7, S. 1239 - 1250ISSN: 1466-8033Online Volltext: dx.doi.org/
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Subharmonic Injection Locking for Phase and Frequency Control of RTD-Based THz OscillatorIn: IEEE Transactions on Terahertz Science and Technology Jg. 10 (2020) Nr. 2, S. 221 - 224ISSN: 2156-342XOnline Volltext: dx.doi.org/ (Open Access)
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Toward mobile integrated electronic systems at THz frequenciesIn: Journal of Infrared, Millimeter, and Terahertz Waves Jg. 41 (2020) Nr. 7, S. 846 - 869ISSN: 1866-6906; 1866-6892Online Volltext: dx.doi.org/
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n-Doped InGaP Nanowire Shells in GaAs/InGaP Core–Shell p–n JunctionsIn: Physica Status Solidi (B): Basic Solid State Physics Jg. 257 (2020) Nr. 2, S. 1900358ISSN: 1521-3951; 0370-1972Online Volltext: dx.doi.org/ (Open Access)
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Charge transport in GaAs nanowires : Interplay between conductivity through the interior and surface conductivityIn: Journal of Physics: Condensed Matter Jg. 31 (2019) Nr. 7,ISSN: 1361-648X; 0953-8984Online Volltext: dx.doi.org/
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Mask-less MOVPE of arrayed n-GaN nanowires on site- and polarity-controlled AlN/Si templatesIn: CrystEngComm Jg. 21 (2019) Nr. 48, S. 7476 - 7488ISSN: 1466-8033Online Volltext: dx.doi.org/
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Process Development for Wet-Chemical Surface Functionalization of Gallium Arsenide Based NanowiresIn: Physica Status Solidi (B): Basic Solid State Physics (2019) S. 1800678ISSN: 1521-3951; 0370-1972Online Volltext: dx.doi.org/
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Toward Nanowire HBT : Reverse Current Reduction in Coaxial GaAs/InGaP n(i)p and n(i)pn Core-Multishell NanowiresIn: Physica Status Solidi (A): Applications and Materials Science Jg. 216 (2019) Nr. 1, S. 1800562ISSN: 1862-6319; 1862-6300Online Volltext: dx.doi.org/
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Germanium Template Assisted Integration of Gallium Arsenide Nanocrystals on Silicon : A Versatile Platform for Modern Optoelectronic MaterialsIn: Advanced Optical Materials Jg. 6 (2018) Nr. 8,ISSN: 2195-1071Online Volltext: dx.doi.org/
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Investigation of charge carrier depletion in freestanding nanowires by a multi-probe scanning tunneling microscopeIn: Nano Research Jg. 11 (2018) Nr. 11, S. 5924 - 5934ISSN: 1998-0000; 1998-0124Online Volltext: dx.doi.org/
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Polarity- and Site-Controlled Metal Organic Vapor Phase Epitaxy of 3D-GaN on Si(111)In: Physica Status Solidi (B): Basic Solid State Physics Jg. 255 (2018) Nr. 5, S. 1700485ISSN: 1521-3951; 0370-1972Online Volltext: dx.doi.org/
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Signatures of interaction-induced helical gaps in nanowire quantum point contactsIn: Nature Physics Jg. 13 (2017) Nr. 6, S. 563 - 568ISSN: 1745-2481; 1745-2473Online Volltext: dx.doi.org/
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Adiabatic edge channel transport in a nanowire quantum point contact registerIn: Nano Letters Jg. 16 (2016) Nr. 7, S. 4569 - 4575ISSN: 1530-6992; 1530-6984Online Volltext: dx.doi.org/
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Ballistic Transport and Exchange Interaction in InAs Nanowire Quantum Point ContactsIn: Nano Letters Jg. 16 (2016) Nr. 5, S. 3116 - 3123ISSN: 1530-6992; 1530-6984Online Volltext: dx.doi.org/
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Erratum: Electrical characterization and transport model of n-gallium nitride nanowiresIn: Applied Physics Letters (APL) Jg. 108 (2016) Nr. 4, S. 082103ISSN: 0003-6951; 1077-3118Online Volltext: dx.doi.org/
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Modelling of electron beam induced nanowire attractionIn: Journal of Applied Physics Jg. 119 (2016) Nr. 14, S. 145101ISSN: 0021-8979; 1089-7550Online Volltext: dx.doi.org/
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Controlling the polarity of metalorganic vapor phase epitaxy-grown GaP on Si(111) for subsequent III-V nanowire growthIn: Applied Physics Letters (APL) Jg. 106 (2015) Nr. 23, S. 231601ISSN: 0003-6951; 1077-3118Online Volltext: dx.doi.org/
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Electrical characterization and transport model of n-gallium nitride nanowiresIn: Applied Physics Letters (APL) Jg. 107 (2015) Nr. 8, S. 082103ISSN: 0003-6951; 1077-3118Online Volltext: dx.doi.org/
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High-Speed GaN/GaInN Nanowire Array Light-Emitting Diode on Silicon(111)In: Nano Letters Jg. 15 (2015) Nr. 4, S. 2318 - 2323ISSN: 1530-6992; 1530-6984Online Volltext: dx.doi.org/
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The effect of the inversion channel at the AlN/Si interface on the vertical breakdown characteristics of GaN-based devicesIn: Semiconductor Science and Technology Jg. 29 (2014) Nr. 11, S. 115012ISSN: 1361-6641; 0268-1242Online Volltext: dx.doi.org/
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Recombination dynamics in single GaAs-nanowires with an axial heterojunction : N- versus p-doped areasIn: Journal of Applied Physics Jg. 113 (2013) Nr. 17, S. 174303-1 - 174303-5ISSN: 0021-8979; 1089-7550Online Volltext: dx.doi.org/
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Resistance and dopant profiling along freestanding GaAs nanowiresIn: Applied Physics Letters (APL) Jg. 103 (2013) Nr. 14, S. 143104ISSN: 0003-6951; 1077-3118Online Volltext: dx.doi.org/
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Comparison of InAs nanowire conductivity : Influence of growth method and structureIn: Physica Status Solidi (C): Current Topics in Solid State Physics Jg. 9 (2012) Nr. 2, S. 230 - 234ISSN: 1862-6351; 1610-1642; 1610-1634Online Volltext: dx.doi.org/
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Direct determination of minority carrier diffusion lengths at axial GaAs nanowire p-n junctionsIn: Nano Letters Jg. 12 (2012) Nr. 3, S. 1453 - 1458ISSN: 1530-6992; 1530-6984Online Volltext: dx.doi.org/
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Far-field imaging for direct visualization of light interferences in GaAs nanowiresIn: Nano Letters Jg. 12 (2012) Nr. 10, S. 5412 - 5417ISSN: 1530-6992; 1530-6984Online Volltext: dx.doi.org/
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N-GaAs/InGaP/p-GaAs core-multishell nanowire diodes for efficient light-to-current conversionIn: Advanced Functional Materials Jg. 22 (2012) Nr. 5, S. 929 - 936ISSN: 1616-301X; 1616-3028Online Volltext: dx.doi.org/
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Scalable electrical properties of axial GaAs nanowire pn-diodesIn: Journal of Electronic Materials (JEM) Jg. 41 (2012) Nr. 5, S. 809 - 812ISSN: 0361-5235; 1543-186XOnline Volltext: dx.doi.org/
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A precise optical determination of nanoscale diameters of semiconductor nanowiresIn: Nanotechnology Jg. 22 (2011) Nr. 38, S. 385201ISSN: 1361-6528; 0957-4484Online Volltext: dx.doi.org/
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Axial pn-junctions formed by MOVPE using DEZn and TESn in vaporliquidsolid grown GaAs nanowiresIn: Journal of Crystal Growth Jg. 315 (2011) Nr. 1, S. 143 - 147ISSN: 0022-0248; 1873-5002Online Volltext: dx.doi.org/
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Gold catalyst initiated growth of GaN nanowires by MOCVDIn: Physica Status Solidi (C): Current Topics in Solid State Physics Jg. 8 (2011) Nr. 7-8, S. 2315 - 2317ISSN: 1862-6351; 1610-1642; 1610-1634Online Volltext: dx.doi.org/
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ICP-RIE etching of self-aligned InP based HBTs with Cl₂/N ₂ chemistryIn: Microelectronic Engineering Jg. 88 (2011) Nr. 7, S. 1601 - 1605ISSN: 0167-9317; 1873-5568Online Volltext: dx.doi.org/
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Ohmic contacts to n-GaAs nanowiresIn: Journal of Applied Physics Jg. 110 (2011) Nr. 1, S. 014305ISSN: 0021-8979; 1089-7550Online Volltext: dx.doi.org/
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Optical properties of heavily doped GaAs nanowires and electroluminescent nanowire structuresIn: Nanotechnology Jg. 22 (2011) Nr. 8, S. 085702ISSN: 1361-6528; 0957-4484Online Volltext: dx.doi.org/
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Planar-defect characteristics and cross-sections of 〈001〉, 〈111〉, and 〈112〉 InAs nanowiresIn: Journal of Applied Physics Jg. 109 (2011) Nr. 11, S. 114320ISSN: 0021-8979; 1089-7550Online Volltext: dx.doi.org/ (Open Access)
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Spatially resolved photoelectric performance of axial GaAs nanowire pn-diodesIn: Nano Research Jg. 4 (2011) Nr. 10, S. 987 - 995ISSN: 1998-0000; 1998-0124Online Volltext: dx.doi.org/
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n-Type doping of vapor–liquid–solid grown GaAs nanowiresIn: Nanoscale Research Letters Jg. 6 (2011) Nr. 1, S. 65ISSN: 1931-7573; 1556-276XOnline Volltext: dx.doi.org/ (Open Access)
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High-Frequency Measurements on InAs Nanowire Field-Effect Transistors using Coplanar Waveguide ContactsIn: IEEE Transactions on Nanotechnology Jg. 9 (2010) Nr. 4, S. 432 - 437ISSN: 1536-125X; 1941-0085Online Volltext: dx.doi.org/
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InP-Based Unipolar Heterostructure Diode for Vertical Integration, Level Shifting, and Small Signal RectificationIn: EICE Transactions C: IEICE Transactions on Electronics Jg. E93-C (2010) Nr. 8, S. 1309 - 1314ISSN: 1745-1353; 0916-8524Online Volltext: dx.doi.org/
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Tailoring the properties of semiconductor nanowires using ion beamsIn: Physica Status Solidi (B): Basic Solid State Physics Jg. 247 (2010) Nr. 10, S. 2329 - 2337ISSN: 0370-1972; 1521-3951Online Volltext: dx.doi.org/
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Alignment of semiconductor nanowires using ion beamsIn: Small Jg. 5 (2009) Nr. 22, S. 2576 - 2580ISSN: 1613-6810; 1613-6829Online Volltext: dx.doi.org/
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Controllable p -type doping of GaAs nanowires during vapor-liquid-solid growthIn: Journal of Applied Physics Jg. 105 (2009) Nr. 2, S. 024305ISSN: 0021-8979; 1089-7550Online Volltext: dx.doi.org/
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Material and doping transitions in single GaAs-based nanowires probed by Kelvin probe force microscopyIn: Nanotechnology Jg. 20 (2009) Nr. 38, S. 385702ISSN: 1361-6528; 0957-4484Online Volltext: dx.doi.org/
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P -type doping of GaAs nanowiresIn: Applied Physics Letters (APL) Jg. 92 (2008) Nr. 16, S. 163107ISSN: 0003-6951; 1077-3118Online Volltext: dx.doi.org/
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Surface-recombination-free InGaAs/InP HBTs and the base contact recombinationIn: Solid State Electronics Jg. 52 (2008) Nr. 7, S. 1088 - 1091ISSN: 0038-1101; 1879-2405Online Volltext: dx.doi.org/
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GaAs whiskers grown by metal-organic vapor-phase epitaxy using Fe nanoparticlesIn: Journal of Applied Physics Jg. 101 (2007) Nr. 5, S. 054318ISSN: 0021-8979; 1089-7550Online Volltext: dx.doi.org/
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Growth and characterisation of GaAs/InGaAs/GaAs nanowhiskers on (1 1 1) GaAsIn: Journal of Crystal Growth Jg. 298 (2007) S. 607 - 611ISSN: 0022-0248; 1873-5002Online Volltext: dx.doi.org/
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High performance III/V RTD and PIN diode on a silicon (001) substrateIn: Applied Physics A: Materials Science and Processing Jg. 87 (2007) Nr. 3, S. 539 - 544ISSN: 0947-8396; 1432-0630Online Volltext: dx.doi.org/
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High transconductance MISFET with a single InAs nanowire channelIn: IEEE Electron Device Letters Jg. 28 (2007) Nr. 8, S. 682 - 684ISSN: 0741-3106; 1558-0563Online Volltext: dx.doi.org/
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Sequential mechanism of electron transport in the resonant tunneling diode with thick barriersIn: Semiconductors Jg. 41 (2007) Nr. 2, S. 227 - 231ISSN: 1063-7826; 1090-6479Online Volltext: dx.doi.org/
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A monolithically integrated intensity-independent polarization-sensitive switch operating at 1.3 μm based on ordering in InGaAsPIn: Physica E: Low-Dimensional Systems and Nanostructures Jg. 32 (2006) Nr. 1-2, S. 554 - 557ISSN: 1386-9477; 1873-1759Online Volltext: dx.doi.org/
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Composition Control in MOVPE-Grown InGaAs Nanowhiskers.In: Journal of Applied Physics Jg. 298 (2006) S. 607 - 611ISSN: 0021-8979; 1089-7550
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Composition control in metal-organic vapor-phase epitaxy grown InGaAs nanowhiskersIn: Journal of Applied Physics Jg. 100 (2006) Nr. 7, S. 074321ISSN: 0021-8979; 1089-7550Online Volltext: dx.doi.org/
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Optoelectronic 1:2 demultiplexing based on resonant tunnelling diodes and pin-photodetectorsIn: Electronics Letters Jg. 42 (2006) Nr. 10, S. 599 - 600ISSN: 0013-5194; 1350-911XOnline Volltext: dx.doi.org/
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Passivation of InP-based HBTsIn: Applied Surface Science Jg. 252 (2006) Nr. 21, S. 7664 - 7670ISSN: 0169-4332; 1873-5584Online Volltext: dx.doi.org/
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Single InGaAs nanowhiskers characterized by analytical transmission electron microscopyIn: Phase Transitions Jg. 79 (2006) Nr. 9-10, S. 727 - 737ISSN: 0141-1594; 1029-0338Online Volltext: dx.doi.org/
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The effect of collector doping on InP-based double heterojunction bipolar transistors
4th International Conference on Electrical and Electronics Engineering (ELECO), Bursa, Turkey, 07.12.2005 - 11.12.2005,In: Turkish Journal of Electrical Engineering & Computer Sciences Jg. 14 (2006) Nr. 3, S. 429 - 436ISSN: 1300-0632; 1303-6203(Open Access) -
Passivation of InP/GaAsSb/InP double heterostructure bipolar transistors with ultra thin base layer by low-temperature deposited SiNₓIn: Solid State Electronics Jg. 49 (2005) Nr. 3, S. 409 - 412ISSN: 0038-1101; 1879-2405Online Volltext: dx.doi.org/
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Polarisation-sensitive switch : An integrated intensity-independent solution for 1.3 μm based on the polarisation anisotropy of ordered InGaAsPIn: Physica Status Solidi (A): Applications and Materials Science Jg. 202 (2005) Nr. 6, S. 992 - 996ISSN: 1862-6300; 1862-6319Online Volltext: dx.doi.org/
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Characterisation of ultra-thin III/V-heterostructures by convergent-beam-electron- and high-resolution-X-ray-diffractionIn: Materials Science and Engineering B: Solid-State Materials for Advanced Technology Jg. 110 (2004) Nr. 2, S. 161 - 167ISSN: 0921-5107; 1873-4944Online Volltext: dx.doi.org/
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Comparison of the passivation effects on self- and non-self-aligned InP/InGaAs/InP double heterostructure bipolar transistors by low-temperature deposited SiNₓIn: Journal of Applied Physics Jg. 96 (2004) Nr. 1, S. 777 - 783ISSN: 0021-8979; 1089-7550Online Volltext: dx.doi.org/
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Current gain increase by SiNₓ passivation in self-aligned InGaAs/InP heterostructure bipolar transistor with compositionally graded baseIn: Solid State Electronics Jg. 48 (2004) Nr. 9, S. 1637 - 1641ISSN: 0038-1101; 1879-2405Online Volltext: dx.doi.org/
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Current transport mechanisms and their effects on the performances of InP-based double heterojunction bipolar transistors with different base structuresIn: Applied Physics Letters (APL) Jg. 84 (2004) Nr. 15, S. 2910 - 2912ISSN: 0003-6951; 1077-3118Online Volltext: dx.doi.org/
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Disziplin im Nano-Maßstab : Selbstorganisation in Bottom-up-ProzessenIn: Forum Forschung: Das Forschungsmagazin der Universität Duisburg-Essen (2004) Nr. 2003/2004, S. 88 - 92
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Effects of (NH4)(2)S passivation on the performance of graded-base InGaAs/InP HBTsIn: Physica status solidi A - Applied research Jg. 201 (2004) Nr. 5, S. 1017 - 1021ISSN: 1521-396X
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Effects of (NH₄)₂S passivation on the performance of graded-base InGaAs/InP HBTsIn: Physica Status Solidi (A): Applications and Materials Science Jg. 201 (2004) Nr. 5, S. 1017 - 1021ISSN: 0031-8965; 1521-396X; 1862-6319; 1862-6300Online Volltext: dx.doi.org/
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Equivalent circuit of a resonant tunnel InGaAs/InAlAs diode operating at millimetric wavesIn: Journal of Communications Technology and Electronics Jg. 49 (2004) Nr. 7, S. 833 - 838ISSN: 1064-2269; 1555-6557
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Equivalent circuit of a resonant tunnel InGaAs/InAlAs diode operating at millimetric wavesIn: Radiotekhnika i Elektronika Jg. 49 (2004) Nr. 7, S. 886 - 893ISSN: 0033-8494
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Growth and characterization of InAlP/InGaAs double barrier RTDs
12th International Conference on Metalorganic Vapour Phase Epitaxy (MOVPE), Lahaina, Hawaii, USA, 30.05.2004 - 04.06.2004,In: Journal of Crystal Growth Jg. 272 (2004) Nr. 1-4, S. 555 - 558ISSN: 0022-0248; 1873-5002Online Volltext: dx.doi.org/ -
Influence of layer structure on the current-voltage characteristics of Si/SiGe interband tunneling diodesIn: Journal of Applied Physics Jg. 96 (2004) Nr. 7, S. 3848 - 3851ISSN: 0021-8979; 1089-7550Online Volltext: dx.doi.org/
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Photoluminescence of GaAs nanowhiskers grown on Si substrateIn: Applied Physics Letters (APL) Jg. 85 (2004) Nr. 26, S. 6407 - 6408ISSN: 0003-6951; 1077-3118Online Volltext: dx.doi.org/
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Sulfur and low-temperature SiNₓ passivation of self-aligned graded-base InGaAs/InP heterostructure bipolar transistorsIn: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures Jg. 22 (2004) Nr. 3, S. 1060 - 1066ISSN: 1071-1023; 2166-2754Online Volltext: dx.doi.org/ (Open Access)
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Surface recombination mechanism in graded-base InGaAs-InP HBTsIn: IEEE Transactions on Electron Devices Jg. 51 (2004) Nr. 6, S. 1044 - 1045ISSN: 0018-9383; 1557-9646Online Volltext: dx.doi.org/
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Circuit and application aspects of tunnelling devices in a MOBILE configurationIn: International Journal of Circuit Theory and Applications Jg. 31 (2003) Nr. 1, S. 83 - 103ISSN: 0098-9886; 1097-007XOnline Volltext: dx.doi.org/
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Growth of III/V resonant tunnelling diode on Si substrate with LP-MOVPE
Eleventh International Conference on MOVPE XI; Berlin, Germany; 3 - 7 June 2002,In: Journal of Crystal Growth Jg. 248 (2003) S. 380 - 383ISSN: 0022-0248; 1873-5002Online Volltext: dx.doi.org/ -
Growth of carbon-doped LP-MOVPE InAlAs using non-gaseous sources
Eleventh International Conference on MOVPE XI; Berlin, Germany; 3 - 7 June 2002,In: Journal of Crystal Growth Jg. 248 (2003) S. 130 - 133ISSN: 0022-0248; 1873-5002Online Volltext: dx.doi.org/ -
MOVPE growth and polarisation dependence of (dis-)ordered InGaAsP PIN diodes for optical fibre applications
Eleventh International Conference on MOVPE XI; Berlin, Germany; 3 - 7 June 2002,In: Journal of Crystal Growth Jg. 248 (2003) S. 158 - 162ISSN: 0022-0248; 1873-5002Online Volltext: dx.doi.org/ -
Lithographic Tools for Producing Patterned Films Compsed of Gas Phase Generated Nanocrystals ImpressIn: Material Science and Technology Jg. 18 (2002) Nr. 7, S. 717 - 720ISSN: 1743-2847; 0267-0836Online Volltext: dx.doi.org/
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Low-voltage MOBILE logic module based on Si/SiGe interband tunnelling diodesIn: IEEE Electron Device Letters Jg. 22 (2001) Nr. 5, S. 215 - 217ISSN: 0741-3106; 1558-0563Online Volltext: dx.doi.org/
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Electro-optical examination of the band structure of ordered InGaAsIn: Applied Physics Letters (APL) Jg. 76 (2000) Nr. 1, S. 88 - 90ISSN: 0003-6951; 1077-3118Online Volltext: dx.doi.org/
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InAlAs/InGaAs/InP heterostructures for RTD and HBT device applications grown by LP-MOVPE using non-gaseous sourcesIn: Journal of Crystal Growth Jg. 221 (2000) Nr. 1-4, S. 722 - 729ISSN: 0022-0248; 1873-5002Online Volltext: dx.doi.org/
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Manufacturability and robust design of nanoelectronic logic circuits based on resonant tunnelling diodesIn: International Journal of Circuit Theory and Applications Jg. 28 (2000) Nr. 6, S. 537 - 552ISSN: 0098-9886; 1097-007XOnline Volltext: dx.doi.org/
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Metalorganic vapour phase epitaxy growth of InP-based heterojunction bipolar transistors with carbon doped InGaAs base using tertiarybutylarsine and tertiarybutylphosphine in N₂ ambientIn: Japanese Journal of Applied Physics Jg. 39 (2000) Nr. 11, S. 6162 - 6165ISSN: 0021-4922; 1347-4065Online Volltext: dx.doi.org/
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Parallel adder design with reduced circuit complexity using resonant tunneling transistors and threshold logicIn: Analog Integrated Circuits and Signal Processing Jg. 24 (2000) Nr. 1, S. 7 - 25ISSN: 0925-1030; 1573-1979Online Volltext: dx.doi.org/
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Threshold logic circuit design of parallel adders using resonant tunneling devices
11th International Symposium on System-Level Synthesis and Design (ISS'98); Hsinchu, Taiwan; 2 - 4 December 1998,In: IEEE Transactions on Very Large Scale Integration (VLSI) Systems Jg. 8 (2000) Nr. 5, S. 558 - 572ISSN: 1063-8210; 1557-9999Online Volltext: dx.doi.org/ -
Extension of the epitaxial shadow mask MBE technique for the monolithic integration and in situ fabrication of novel device structures
10th International Conference on Molecular Beam Epitaxy (MBE-X); Cannes; 31 August - 4 September 1998,In: Journal of Crystal Growth Jg. 201 (1999) S. 574 - 577ISSN: 0022-0248; 1873-5002Online Volltext: dx.doi.org/ -
Strain Relaxation During Heteroepitaxy on Twist-Bonded Thin Gallium Arsenide SubstratesIn: MRS (Materials Research Society) Proceedings Jg. 535: III-V and IV-IV Materials and Processing Challenges for Highly Integrated Microelectronics and Optoelectronics (1999) S. 45ISSN: 0272-9172; 1946-4274Online Volltext: dx.doi.org/
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Fast fabrication of InP-based HBT using a novel coplanar designIn: Electronics Letters Jg. 34 (1998) Nr. 19, S. 1885 - 1886ISSN: 0013-5194; 1350-911XOnline Volltext: dx.doi.org/ (Open Access)
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HR XRD for the analysis of ultrathin centrosymmetric strained DB-RTD heterostructuresIn: Thin Solid Films Jg. 319 (1998) Nr. 1-2, S. 25 - 28ISSN: 0040-6090; 1879-2731Online Volltext: dx.doi.org/
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InGaP/GaAs hole barrier asymmetry determined by (0 0 2) X-ray reflections and p-type DB-RTD hole transportIn: Journal of Crystal Growth Jg. 195 (1998) Nr. 1-4, S. 117 - 123ISSN: 0022-0248; 1873-5002Online Volltext: dx.doi.org/
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InGaP/GaAs shadow-mask for optoelectronic integration and MBE regrowthIn: Journal of Crystal Growth Jg. 195 (1998) Nr. 1-4, S. 490 - 494ISSN: 0022-0248; 1873-5002Online Volltext: dx.doi.org/
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Monodisperse aerosol particle deposition : Prospects for nanoelectronicsIn: Microelectronic Engineering Jg. 41-42 (1998) S. 535 - 538ISSN: 0167-9317; 1873-5568Online Volltext: dx.doi.org/
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NAND/NOR logic circuit using single InP-based RTBTIn: Electronics Letters Jg. 34 (1998) Nr. 25, S. 2390 - 2392ISSN: 0013-5194; 1350-911XOnline Volltext: dx.doi.org/
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Determination of interface composition in III-V heterojunction devices (HBT and RTD) with atomic resolution using STEM techniques
3rd International Workshop on Expert Evaluation & Control of Compound Semicond. Mat. & Technologies (EXMATEC), Freiburg, Germany, 12.05.1996 - 15.05.1996,In: Materials Science and Engineering B Jg. 44 (1997) Nr. 1-3, S. 52 - 56ISSN: 0921-5107; 1873-4944Online Volltext: dx.doi.org/ -
Investigation of growth temperature dependent GaInP ordering in different crystal planes using X-ray diffraction and photoluminescence
3rd International Workshop on Expert Evaluation & Control of Compound Semicond. Mat. & Technologies (EXMATEC), Freiburg, Germany, 12.05.1996 - 15.05.1996,In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology Jg. 44 (1997) Nr. 1-3, S. 91 - 95ISSN: 0921-5107; 1873-4944Online Volltext: dx.doi.org/ -
Modelling imperfections of epitaxial heterostructures by means of X-ray diffraction analysis
3rd European Symposium on X-Ray Topography and High Resolution Diffraction (X-TOP), 22.04.1996 - 24.04.1996, Parma, Italy,In: Il Nuovo Cimento della Società Italiana di Fisica D Jg. 19 (1997) Nr. 2-4, S. 299 - 304ISSN: 0392-6737; 1826-9893Online Volltext: dx.doi.org/ -
Modelling intermixing of short period strained layer superlattices by means of X-ray diffraction analysis
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The role of hydrogen in low-temperature MOVPE growth and carbon doping of In₀.₅₃Ga₀.₄₇As for InP-based HBT
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Characterization of hydrogen passivation and carbon self-compensation of highly C-doped GaAs by means of x-ray diffractionIn: Journal of Applied Physics Jg. 79 (1996) Nr. 2, S. 710 - 716ISSN: 0021-8979; 1089-7550Online Volltext: dx.doi.org/
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Growth temperature dependent band alignment at the Ga₀.₅₁In₀.₄₉P to GaAs heterointerfacesIn: Journal of Applied Physics Jg. 79 (1996) Nr. 1, S. 305 - 309ISSN: 0021-8979; 1089-7550Online Volltext: dx.doi.org/
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The impact of pseudomorphic AlAs spacer layers on the gate leakage current of InAlAs/InGaAs heterostructure field-effect transistorsIn: Microwave and Optical Technology Letters Jg. 11 (1996) Nr. 3, S. 125 - 128ISSN: 0895-2477; 1098-2760Online Volltext: dx.doi.org/
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Acceptor-hydrogen interaction in ternary III-V semiconductors
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Determination of CuPt-type ordering in GaInP by means of x-ray diffraction in the skew, symmetric arrangementIn: Applied Physics Letters (APL) Jg. 67 (1995) S. 2807ISSN: 0003-6951; 1077-3118Online Volltext: dx.doi.org/
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Evidence of type-II band alignment at the ordered GaInP to GaAs heterointerfaceIn: Journal of Applied Physics Jg. 77 (1995) Nr. 3, S. 1154 - 1158ISSN: 0021-8979; 1089-7550Online Volltext: dx.doi.org/
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InP-based heterostructure field-effect transistors with high-quality short-period (InAs)₃m/(GaAs)₁m superlattice channel layers
8th Int. Conf. on Molecular Beam Epitaxy (MBE) (IC MBE), Osaka, Japan, 29.08.1994 - 02.09.1994,In: Journal of Crystal Growth Jg. 150 (1995) S. 1225 - 1229ISSN: 0022-0248; 1873-5002Online Volltext: dx.doi.org/ -
Metalorganic vapor phase epitaxial grown heterointerfaces to GaInP with group-III and group-V exchangeIn: Journal of Crystal Growth Jg. 146 (1995) Nr. 1-4, S. 538 - 543ISSN: 0022-0248; 1873-5002Online Volltext: dx.doi.org/
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Room-temperature deposition of SiNx using ECR-PECVD for III/V semiconductor microelectronics in lift-off techniqueIn: Journal of Non-Crystalline Solids Jg. 187 (1995) S. 334 - 339ISSN: 0022-3093; 1873-4812Online Volltext: dx.doi.org/
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High breakdown voltage InGaAs/lnAIAs HFET using ln₀.₅Ga₀.₅P spacer layerIn: Electronics Letters Jg. 30 (1994) Nr. 2, S. 169 - 170ISSN: 0013-5194; 1350-911XOnline Volltext: dx.doi.org/
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Highly strained In₀.₅Ga₀.₅P as wide-gap material on InP substrate for heterojunction field effect transistor applicationIn: Journal of Crystal Growth Jg. 145 (1994) Nr. 1-4, S. 326 - 331ISSN: 0022-0248; 1873-5002Online Volltext: dx.doi.org/
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Low-pressure metalorganic vapour phase epitaxy growth of InAs/GaAs short period superlattices on InP substrates
7th Int. Conf. on Metalorganic Vapour Phase Epitaxy (MOVPE) (IC MOVPE), Yokohama, Japan, 31.05.1994 - 03.06.1994,In: Journal of Crystal Growth Jg. 145 (1994) Nr. 1-4, S. 771 - 777ISSN: 0022-0248; 1873-5002Online Volltext: dx.doi.org/ -
X-ray characterization of very thin GaₓIn₁₋ₓP (x ≈ 0.5) layers grown on InP
Int. Workshop on Expert Evaluation & Control of Compound Semicond. Mat. & Technologies (EXMATEC), Parma, Italy, 18.05.1994 - 20.05.1994,In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology Jg. 28 (1994) Nr. 1-3, S. 188 - 192ISSN: 0921-5107; 1873-4944Online Volltext: dx.doi.org/ -
X-ray diffraction characterization of highly strained InAs and GaAs layers on InP grown by metalorganic vapor-phase epitaxyIn: Journal of Applied Physics Jg. 75 (1994) Nr. 5, S. 2426 - 2433ISSN: 0021-8979; 1089-7550Online Volltext: dx.doi.org/ (Open Access)
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Analysis of ordering in GaInP by means of x-ray diffractionIn: Journal of Applied Physics Jg. 73 (1993) Nr. 6, S. 2770 - 2774ISSN: 0021-8979; 1089-7550Online Volltext: dx.doi.org/
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Effects of deep levels and Si-doping on GaInP material properties investigated by means of optical methods
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InyGa₁₋yAs{plus 45 degree rule}GaAs interface smoothing by GaAs monolayers in highly strained graded superlattice channels (0.2 ≤ y ≤ 0.4) for pseudomorphic AlₓGa₁₋ₓAs{plus 45 degree rule}InyGa₁₋yAs HFETIn: Journal of Crystal Growth Jg. 127 (1993) Nr. 1-4, S. 589 - 591ISSN: 0022-0248; 1873-5002Online Volltext: dx.doi.org/
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Analysis of gate leakage on MOVPE grown InAlAs/InGaAs-HFETIn: Microelectronic Engineering Jg. 19 (1992) Nr. 1-4, S. 401 - 404ISSN: 0167-9317; 1873-5568Online Volltext: dx.doi.org/
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High doping performance of lattice matched GaInP on GaAsIn: Journal of Crystal Growth Jg. 124 (1992) Nr. 1-4, S. 475 - 482ISSN: 0022-0248; 1873-5002Online Volltext: dx.doi.org/
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Growth and characterization of AlGaAs/GaAs Bragg reflectors for nonlinear optoelectronic devicesIn: Materials Science and Engineering B: Solid-State Materials for Advanced Technology Jg. 9 (1991) Nr. 1-3, S. 361 - 364ISSN: 1873-4944; 0921-5107Online Volltext: dx.doi.org/
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d.c.- and r.f.-characterisation of conventional and superlattice heterostructure field-effect transistors at low temeperaturesIn: Solid State Electronics Jg. 33 (1990) Nr. 11, S. 1393 - 1400ISSN: 0038-1101; 1879-2405Online Volltext: dx.doi.org/
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Current oscillations at high electrical fields in the two-dimensional electron gas in GaAs/AlGaAs heterostructuresIn: Applied Physics Letters (APL) Jg. 54 (1989) Nr. 26, S. 2668 - 2670ISSN: 0003-6951; 1077-3118Online Volltext: dx.doi.org/ (Open Access)
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Monolithisch integrierter Mikrowellenoszillator in SchlitzleitungstechnikIn: NTZ: Fachzeitschrift für Informations- und Kommunikationstechnik Jg. 42 (1989) Nr. 10, S. 628 - 631ISSN: 2190-4197; 0948-728X
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RF Measurements and Characterization of Heterostructure Field-Effect Transistors at Low TemperaturesIn: IEEE Transactions on Microwave Theory and Techniques Jg. 37 (1989) Nr. 9, S. 1380 - 1388ISSN: 1557-9670; 0018-9480Online Volltext: dx.doi.org/
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Gate-Voltage Dependent Transport Measurements on Heterostructure Field-Effect TransistorsIn: IEEE Transactions on Electron Devices Jg. 33 (1986) Nr. 5, S. 646 - 650ISSN: 0018-9383; 1557-9646Online Volltext: dx.doi.org/
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Frequency locking of a free running resonant tunneling diode oscillator by wireless sub-harmonic injection locking
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FR4 Test Board for Measurements on InP Resonant Tunneling Diode THz Oscillators Integrated via Flip Chip Bonding TechnologyIn: 2022 15th UK-Europe-China Workshop on Millimetre-Waves and Terahertz Technologies (UCMMT) / UCMMT2022: 15th UK-Europe-China Workshop on Millimeter-Waves and Terahertz Technologies; 17-18 October 2022; Tønsberg, Norway (online) / Institute of Electrical and Electronics Engineers (IEEE) (Hrsg.) 2022ISBN: 978-1-6654-9310-9; 978-1-6654-9311-6Online Volltext: dx.doi.org/
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Monolithic n+-InGaAs Thin Film Resistor from DC up to 0.5 THzIn: 2022 Fifth International Workshop on Mobile Terahertz Systems (IWMTS): Proceedings / Fifth International Workshop on Mobile Terahertz Systems (IWMTS), 04.-06.07.2022, Duisburg 2022Online Volltext: dx.doi.org/
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On-Wafer Characterization and Modelling of InP Resonant Tunnelling Diodes up to 500 GHzIn: Proceedings of the 52nd European Microwave Conference (EuMC) / 52nd European Microwave Conference (EuMC): 27-29 September 2022; Milan, Italy 2022ISBN: 978-2-8748-7069-9; 978-1-6654-5881-8Online Volltext: dx.doi.org/
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Transfer-Substrate Process for InP RTD-Oscillator CharacterizationIn: 2022 Fifth International Workshop on Mobile Terahertz Systems (IWMTS): Proceedings / Fifth International Workshop on Mobile Terahertz Systems (IWMTS), 04.-06.07.2022, Duisburg 2022Online Volltext: dx.doi.org/
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Triple Barrier Resonant Tunneling Diodes for THz emission and sensingIn: Proceedings of the SPIE Optical Engineering + Applications Conference 2022: Terahertz Emitters, Receivers, and Applications / Razeghi, Manijeh; Baranov, Alexei N.; SPIE Optical Engineering + Applications Conference 2022; 21 - 22 August 2022; San Diego, USA 2022ISBN: 9781510654440; 9781510654457Online Volltext: dx.doi.org/
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Broadband THz detection using InP triple-barrier resonant tunneling diode with integrated antennaIn: Proceedings of the 4th International Workshop on Mobile Terahertz Systems / IWMTS 2021; 5-6 July 2021; Essen, Germany 2021ISBN: 978-1-7281-8439-5; 978-1-7281-8440-1Online Volltext: dx.doi.org/
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Design of a 1-to-4 subarray element for wireless subharmonic injection in the THz bandIn: Proceedings of the 4th International Workshop on Mobile Terahertz Systems / IWMTS 2021; 5-6 July 2021; Essen, Germany 2021ISBN: 978-1-7281-8439-5; 978-1-7281-8440-1Online Volltext: dx.doi.org/ Online Volltext (Open Access)
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THz detectors and emitters with On-Chip antenna aligned on hyper-hemispherical silicon lensesIn: Proceedings of the 4th International Workshop on Mobile Terahertz Systems / IWMTS 2021; 5-6 July 2021; Essen, Germany 2021ISBN: 978-1-7281-8439-5; 978-1-7281-8440-1Online Volltext: dx.doi.org/ Online Volltext (Open Access)
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Growth of site- And polarity-controlled GaN nanowires on Silicon for high-speed LEDsIn: 8th GMM-Workshops on Micro-Nano-Integration / Virtual, Online; ; 15 - 17 September 2020 2020, S. 60 - 64ISBN: 9783800753277
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Large-Signal Modelling of sub-THz InP Triple-Barrier Resonant Tunneling DiodesIn: 3rd International Workshop on Mobile Terahertz Systems / IWMTS 2020; Essen, Germany; 1-2 July 2020 2020, S. 9166270ISBN: 978-1-7281-5598-2; 978-1-7281-5599-9Online Volltext: dx.doi.org/
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The accurate predictions of THz quantum currents requires a new displacement current coefficient instead of the traditional transmission oneIn: 3rd International Workshop on Mobile Terahertz Systems / IWMTS 2020; Essen, Germany; 1-2 July 2020 2020, S. 9166410ISBN: 978-1-7281-5598-2; 978-1-7281-5599-9Online Volltext: dx.doi.org/
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Broadband detection capability of a triple barrier resonant tunneling diodeIn: 2nd International Workshop on Mobile Terahertz Systems / IWMTS 2019; Bad Neuenahr, Germany; 1 - 3 July 2019 2019, S. 8823724ISBN: 978-1-7281-1271-8; 978-1-7281-1270-1; 978-1-7281-1272-5Online Volltext: dx.doi.org/
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Characterization of the Effective Tunneling Time and Phase Relaxation Time in Triple-Barrier Resonant Tunneling DiodesIn: Compound Semiconductor Week 2019 (CSW): Proceedings / CSW 2019; Nara, Japan; 19 - 23 May 2019 2019, S. 8819043ISBN: 978-1-7281-0080-7; 978-1-7281-0079-1; 978-1-7281-0081-4Online Volltext: dx.doi.org/
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Indiumphosphid-Resonante Tunneldioden für THz-AnwendungenIn: MikroSystemTechnik Kongress 2019: Mikroelektronik | MEMS-MOEMS | Systemintegration – Säulen der Digitalisierung und künstlichen Intelligenz / 28. – 30. Oktober 2019 in Berlin 2019, S. 400 - 403ISBN: 978-3-8007-5129-7; 978-3-8007-5090-0
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Transmitarray element design for subharmonic injection-locked RTD oscillators in THz bandIn: Progress in Electromagnetics Research Symposium - Fall (PIERS - FALL): Proceedings / Fall 2019; Xiamen, China; 17 - 20 December 2019 2019, S. 2518 - 2522ISBN: 978-17281-5304-9; 978-1-7281-5305-6Online Volltext: dx.doi.org/ Online Volltext (Open Access)
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Triple-Barrier Resonant-Tunnelling Diode THz Detectors with on-chip antennaIn: GeMiC 2019 - 12th German Microwave Conference / GeMiC 2019; Stuttgart, Germany; 25 - 27 March 2019 2019, S. 17 - 19ISBN: 978-3-9812668-9-4; 978-3-9820397-0-1; 978-1-7281-0242-9Online Volltext: dx.doi.org/
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Broadband millimeter-wave detector based on triple-barrier resonant tunneling diode and tailored archimedian spiral antennaIn: Proceedings of 2017 Asia-Pacific Microwave Conference (APMC) / APMC 2017, 13. - 16. November 2017, Kuala Lumpur, Malaysia / Pasya, Idnin; Seman, Fauziahanim Che (Hrsg.) 2018, S. 775 - 778ISBN: 978-1-5386-0640-7Online Volltext: dx.doi.org/ Online Volltext (Open Access)
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Millimeter-wave Signal Generation and Detection via the same Triple Barrier RTD and on-chip AntennaIn: Proceedings of the 1st International Workshop on Mobile Terahertz Systems / IWMTS 2018, Duisburg, Germany, 2 - 4 July 2018 2018, S. 8454700ISBN: 978-1-5386-1221-7; 978-1-5386-1220-0; 978-1-5386-1222-4Online Volltext: dx.doi.org/ Online Volltext (Open Access)
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Triple barrier RTD integrated in a slot antenna for mm-wave signal generation and detectionIn: Compound Semiconductor Week (CSW 2018) / 14th Int. Symposium on Compound Semiconductors (ISCS), and the 30th Int. Conference on Indium Phosphide and Related Materials (IPRM), May 29 – June 1, 2018, Massachussetts Institute of Technology (MIT), Cambridge, MA, USA 2018, S. 54
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Frequency locking of a free running resonant tunneling diode oscillator by wire-less sub-harmonic injection lockingIn: 10th UK-Europe-China Workshop on Millimetre Waves and Terahertz Technologies, UCMMT 2017 / UCMMT 2017; Liverpool, United Kingdom; 11 - 13 September 2017 2017, S. 8068485ISBN: 978-1-5386-2720-4; 978-1-5386-2721-1Online Volltext: dx.doi.org/
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Modeling of electron beam induced GaAs nanowire attractionIn: Abstractband: MiFuN: Microstructural Functionality at the Nanoscale / International Workshop on Microstructural Functionality at the Nanoscale (MiFuN 2017), 4. - 6. Oktober 2017, Duisburg 2017
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Ballistic and spin transport in InAs nanowiresIn: Nanotechnology Materials and Devices Conference: conference proceedings / IEEE Nanotechnology Materials and Devices Conference, Toulouse, France, 2016, October 9th-12th 2016ISBN: 978-1-5090-4352-1; 978-1-5090-4353-8Online Volltext: dx.doi.org/
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Characterization and modeling of zero bias RF-detection diodes based on triple barrier resonant tunneling structuresIn: International Conference on Indium Phosphide and Related Materials (IPRM), 2013 / International Conference on Indium Phosphide and Related Materials (IPRM), 2013 : 19 - 23 May 2013, Kobe, Japan 2013ISBN: 9781467361309; 978-1-4673-6131-6; 978-1-4673-6132-3 ISSN: 1092-8669Online Volltext: dx.doi.org/
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Junction field-effect transistor based on GaAs core-shell nanowiresIn: International Conference on Indium Phosphide and Related Materials (IPRM), 2013 / International Conference on Indium Phosphide and Related Materials (IPRM), 2013 : 19 - 23 May 2013, Kobe, Japan 2013ISBN: 978-1-4673-6130-9; 978-1-4673-6131-6 ISSN: 1092-8669Online Volltext: dx.doi.org/
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Triple barrier resonant tunneling diodes for microwave signal generation and detectionIn: European Microwave Integrated Circuits Conference 2013 / EuMIC 2013; 6 - 8 Oct. 2013; Nuremberg, Germany 2013, S. 228 - 231ISBN: 978-1-4799-0266-8; 978-2-87487-032-3
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An InAs nanowire spin transistor with subthreshold slope of 20mV/decIn: 70th Annual Device Research Conference (DRC), 2012 / Annual Device Research Conference, 18 - 20 June 2012, The Pennsylvania State University, University Park, Pennsylvania 2012, S. 79 - 80ISBN: 978-1-4673-1163-2; 978-1-4673-1161-8; 978-1-4673-1164-9 ISSN: 1548-3770Online Volltext: dx.doi.org/
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Analysis of terahertz zero bias detectors by using a triple-barrier resonant tunneling diode integrated with a self-complementary bow-tie antennaIn: 70th Annual Device Research Conference (DRC), 2012 / Annual Device Research Conference, 18 - 20 June 2012, The Pennsylvania State University, University Park, Pennsylvania 2012, S. 77 - 78ISBN: 978-1-4673-1163-2; 978-1-4673-1161-8; 978-1-4673-1164-9 ISSN: 1548-3770Online Volltext: dx.doi.org/
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III-V Semiconductor Nanowire TransistorsIn: Advances in III-V Semiconductor Nanowires and Nanodevices / Wang, Deli; Li, Jianye (Hrsg.) 2012, S. 129 - 144ISBN: 978-1-60805-415-2; 978-1-60805-052-9Online Volltext: dx.doi.org/
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III/V Nanowires for electronic and optoelectronic applicationsIn: Nanoparticles from the gas phase: formation, structure, properties / Lorke, Axel (Hrsg.) 2012, S. 357 - 385ISBN: 978-3-642-28545-5; 978-3-642-28546-2Online Volltext: dx.doi.org/
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Imaging of waveguiding and scattering interferences in individual GaAs nanowires via second-harmonic generationIn: Nanophotonics IV / Andrews, David L.; Nanophotonics, 15 - 19 April 2012, Brussels, Belgium 2012ISBN: 978-0-8194-9116-9 ISSN: 0277-786XOnline Volltext: dx.doi.org/
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Sensitive high frequency envelope detectors based on triple barrier resonant tunneling diodesIn: International Conference on Indium Phosphide and Related Materials / IPRM 2012; Santa Barbara, United States; 27 - 30 August 2012 2012, S. 36 - 39ISBN: 978-1-4673-1724-5; 978-1-4673-1725-2Online Volltext: dx.doi.org/
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Single GaAs nanowire photovoltaic devices under very high power illuminationIn: International Conference on Indium Phosphide and Related Materials / IPRM 2012; Santa Barbara, United States; 27 - 30 August 2012 2012, S. 253 - 256ISBN: 978-1-4673-1724-5Online Volltext: dx.doi.org/
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High performance submicron RTD design for mm-wave oscillator applicationsIn: 23rd International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM 2011; May 22 - 26, 2011; Berlin, Germany 2011, S. 133 - 136ISBN: 978-1-4577-1753-6; 978-3-8007-3356-9
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Spatially resolved photovoltaic performance of axial GaAs nanowire pn-diodesIn: 2011 69th Annual Device Research Conference (DRC 2011) / Annual Device Research Conference, Santa Barbara, California, USA, 20 - 22 June 2011 2011, S. 53 - 54ISBN: 978-1-61284-243-1; 978-1-61284-241-7Online Volltext: dx.doi.org/
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The optoelectronic performance of axial and radial GaAs nanowire pn-diodesIn: 23rd International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM 2011; May 22 - 26, 2011; Berlin, Germany 2011, S. 276 - 278ISBN: 978-3-8007-3356-9; 978-1-4577-1753-6
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Fabrication and RF performance of InAs Nanowire FETIn: Device Research Conference (DRC), 2010 / Device Research Conference, 21 - 23 June 2010, The University of Notre Dame, Notre Dame, Indiana 2010, S. 279 - 282ISBN: 978-1-4244-7870-5; 978-1-4244-6562-0 ISSN: 1548-3770Online Volltext: dx.doi.org/
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Scalable high-current density RTDs with low series resistanceIn: International Conference on Indium Phosphide & Related Materials (IPRM), 2010: Conference Proceedings / International Conference on Indium Phosphide & Related Materials, May 31, 2010 - June 4, 2010, Takamatsu Symbol Tower, Kagawa, Japan 2010, S. 358 - 361ISBN: 978-1-4244-5919-3; 978-1-4244-5920-9Online Volltext: dx.doi.org/
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High frequency characterisation of single inas nanowire field-effect transistorsIn: 20th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM 2008; Versailles, France; 25 - 29 May 2008 2008, S. 4703003ISBN: 978-1-4244-2258-6; 978-1-4244-2259-3Online Volltext: dx.doi.org/
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Monostable-bistable threshold logic elements in a fully complementary optical receiver circuit for high frequency applicationsIn: 20th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM 2008; Versailles, France; 25 - 29 May 2008 2008, S. 4702921ISBN: 978-1-4244-2258-6; 978-1-4244-2259-3Online Volltext: dx.doi.org/
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A four-resonant-tunneling-diode (4RTD) NAND/NOR logic gateIn: Proceedings of the IEEE International Symposium on Circuits and Systems / ISCAS 2007; New Orleans, United States; 27 - 30 May 2007 2007, S. 129 - 132ISBN: 1-4244-0920-9; 1-4244-0921-7Online Volltext: dx.doi.org/
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Integrated InGaAs pin-diode on exactly oriented silicon (001) substrate suitable for 10 Gbit/s digital applicationsIn: 20th Annual Meeting of the IEEE Lasers and Electro-Optics Society: Conference Proceedings / LEOS; Lake Buena Vista, United States; 21 - 25 October 2007 2007, S. 180 - 181ISBN: 978-1-4244-0924-2Online Volltext: dx.doi.org/
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Large-signal analysis and ac modelling of sub-micron resonant tunnelling diodesIn: 2nd European Microwave Integrated Circuits Conference: Conference Proceedings / EuMIC 2007; Munich, Germany; 8 - 12 October 2007 2007, S. 207 - 210ISBN: 978-2-87487-002-6Online Volltext: dx.doi.org/
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Modeling the carrier mobility in nanowire channel fetIn: Low-Dimensional Materials: Synthesis, Assembly, Property Scaling and Modeling / MRS Spring Meeting 2007; San Francisco, United States; 9 - 13 April 2007 2007, S. 139 - 144ISBN: 978-1-60560-423-7Online Volltext: dx.doi.org/
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Single n-InAs nanowire MIS-field-effect transistor : Experimental and simulation resultsIn: 19th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM '07; 14 - 18 May 2007; Matsue, Japan 2007, S. 392 - 395ISBN: 1-4244-0874-1Online Volltext: dx.doi.org/
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Sub-nanosecond pulse generation using resonant tunneling diodes for impulse radioIn: IEEE International Conference on Ultra-Wideband 2007 / ICUWB; 24 - 27 September 2007; Singapore 2007, S. 354 - 359ISBN: 978-1-4244-0520-6; 978-1-4244-0521-3Online Volltext: dx.doi.org/
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Concept and Development of a New Mobile-Gate with All Optical InputIn: German Microwave Conference / GeMic`06; Karslruhe, Germany; 28.03.2006 - 30.03.2006 2006
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Fabrication and electrical characterisation of n-InAs single nanowhisker field-effect transistorsIn: International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM 2006; Princeton; United States; 8 -11 May 2006 2006, S. 436 - 438ISBN: 0-7803-9558-1Online Volltext: dx.doi.org/
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Low-temperature DC and RF measurement and modelling of InGaAs-InAlAs resonant tunneling diodes down to 15 KIn: Proceedings of the 1st European Microwave Integrated Circuits Conference / EuMIC 2006; Manchester; United Kingdom; 10 - 13 September 2006 2006, S. 344 - 347ISBN: 2-9600551-8-7Online Volltext: dx.doi.org/
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Bias Dependent Boolean Multivalue Logic Application of Resonant Tunneling Bipolar TransistorsIn: Proceedings of the German Microwave Conference / GeMic 2005, Ulm, Germany, 05.04.2005 - 07.04.2005 2005, S. 156 - 159
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Characterisation of GaAs nanowhiskers grown on GaAs and Si substratesIn: 17th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM 2005; Glasgow, Scotland; 8 - 12 May 2005 2005, S. 363 - 366ISBN: 0-7803-8891-7Online Volltext: dx.doi.org/
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Design and modelling of A III/V mobile-gate with optical input on a silicon substrateIn: Conference Proceedings - International Conference on Indium Phosphide and Related Materials / IPRM 2005; Glasgow, Scotland; 8 - 12 May 2005 2005, S. 17 - 20ISBN: 0-7803-8891-7Online Volltext: dx.doi.org/
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Determination of piezo-electric fields in spontaneously ordered InGaAsPIn: 27th International Conference on the Physics of Semiconductors / ICPS-27, Flagstaff, Arizona, 26 - 30 July 2004 2005, S. 119 - 120ISBN: 9780735402577Online Volltext: dx.doi.org/
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High-speed InP-based resonant tunnelling diode on silicon substrateIn: Proceedings of the 35th European Solid-State Device Research Conference / ESSDERC 2005; Grenoble; France; 12 - 16 September 2005 2005, S. 257 - 260ISBN: 0-7803-9203-5Online Volltext: dx.doi.org/
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A nanoparticle-coated nanocrystal-gate for an INP-based heterostructure field-effect transistorIn: 16th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM`04; Kagoshima, Japan; 31 May - 4 June 2004 2004, S. 435 - 438ISBN: 0-7803-8595-0Online Volltext: dx.doi.org/
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Beiträge der Nanotechnologie zur Errhöhung der Funktionalität und Dichte in der ElektronikIn: Workshop "Kontrollierte Selbstorganisation für zukünftige technische Anwendungen" / Düsseldorf, Germany; 16.06.2003 - 17.06.2003 2004, S. 34 - 40ISSN: 1436-5929
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Buffer optimization for InP-on-si (001) quasi-substratesIn: 16th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM`04; Kagoshima, Japan; 31 May - 4 June 2004 2004, S. 118 - 121ISBN: 0-7803-8595-0Online Volltext: dx.doi.org/
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Manufacturability and electrical characteristics of Si/SiGe interband tunnelling diodesIn: 5th International Conference on Semiconductor Devices and Microsystmes: Conference Proceedings / ASDAM 2004; Slomenice, Slovakia; 17 - 21 October 2004 2004, S. 29 - 32ISBN: 0-7803-8335-7Online Volltext: dx.doi.org/
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Resonant tunneling diode immedunce dependence analysisIn: Fifth International Kharkov Symposium on Physics and Engineering of Microwaves, Millimeter, and Submillimeter Waves: Symposium Proceedings / MSMW'04; Kharkov, Ukraine; 21 - 26 June 2004 / Kostenko, A.; Nosich, A.I.; Yakovenko, V.F. (Hrsg.) Jg. 2 2004, S. 566 - 568ISBN: 0780384113; 9780780384118
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Growth of highly p-type doped GaAsSb : C for HBT applicationIn: International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM`03; Santa Barbara, USA; 12.05.2003 - 16.05.2003 2003, S. 575 - 578ISBN: 0-7803-7704-4Online Volltext: dx.doi.org/
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InP based double heterojunction bipolar transistor with carbon doped GaAsSb : C base grown by LP-MOVPEIn: Proceedings of the 11th European GAAS and Related III-V Compounds Application Symposium / GAAS`03; München, Germany; 06.10.2003 - 10.10.2003 2003, S. 255 - 257
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Mechanism of Current Gain increase of Heterostructure Bipolar Transistors Passivated by Low-Temperature Deposited SiNxIn: Proceedings of the 11th European GAAS and Related III-V Compounds Application Symposium / GAAS`03; München, Germany; 06.10.2003 - 10.10.2003 2003, S. 259 - 262Online Volltext: dx.doi.org/
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Passivation of graded-base InP/InGaAs/InP double heterostructure bipolar transistors by room-temperature deposited SiNₓIn: International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM`03; Santa Barbara, USA; 12.05.2003 - 16.05.2003 2003, S. 156 - 159ISBN: 0-7803-7704-4Online Volltext: dx.doi.org/
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Asynchronous circuit design based on the RTBT monostable-bistable logic transition element (MOBILE)In: Proceedings of the 15th Symposium on Integrated Circuits and Systems Design / SBCCI 2002; Porto Alegre, Brazil; 9 - 14 September 2002 2002, S. 365 - 370ISBN: 0-7695-1807-9Online Volltext: dx.doi.org/
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Experimental threshold logic implementations based on resonant tunnelling diodesIn: Proceedings of the 9th IEEE International Conference on Electronics, Circuits, and Systems / ICECS 2002; 15 - 18 September 2002; Dubrovnik, Croatia Jg. 2 2002, S. 669 - 672ISBN: 0-7803-7596-3Online Volltext: dx.doi.org/
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MOVPE growth and polarisation dependence of (dis-)ordered InGaAsP PIN diodes for optical fibre applicationsIn: 14th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / Stockholm, Sweden; 12 - 16 May 2002 2002, S. 127 - 130ISBN: 0-7803-7320-0Online Volltext: dx.doi.org/
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Pseudo dynamic gate design based on the Resonant Tunneling-Bipolar Transistor (RTBT)In: Proceedings of the 32nd European Solid-State Device Research Conference / ESSDERC 2002; Firenze, Italy; 24 - 26 September 2002 / Gnani, E.; Baccarani, G.; Rudan, M. (Hrsg.) 2002, S. 211 - 214ISBN: 88-900847-8-2Online Volltext: dx.doi.org/
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Resonant tunnelling diodes for digital circuit applicationsIn: 4th International Conference on Advanced Semiconductor Devices and Microsystems: Conference Proceedings / ASDAM 2002; Smolenice, Slovakia; 14 - 16 October 2002 2002, S. 115 - 124ISBN: 0-7803-7276-XOnline Volltext: dx.doi.org/
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InP-based monolithically integrated RTD/HBT MOBILE for logic circuitsIn: 13th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM 2001; Nara, Japan; 14.05.2001 - 18.05.2001 2001, S. 232 - 235ISBN: 0-7803-6700-6Online Volltext: dx.doi.org/
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Resonant Tunneling Device Logic : A Circuit Designer's PerspectiveIn: Circuit Paradigm in the 21st Century: ECCTD ’01 ; Proceedings of the 15th European Conference on Circuit Theory ; Helsinki University of Technology, Finland, 28th - 31st August 2001 ; Vol. 1 / European Conference on Circuit Theory and Design (ECCTD) ; 28th - 31st August 2001, Espoo, Finland / Porra, Veikko (Hrsg.) 2001, S. 189 - 192ISBN: 951-22-6337-8; 951-22-5572-3
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Technology of a depth-2 full-adder circuit using the InP RTD/HFET mobileIn: 13th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM 2001; Nara, Japan; 14.05.2001 - 18.05.2001 2001, S. 228 - 231ISBN: 0-7803-6700-6Online Volltext: dx.doi.org/
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Tunnelling diode technologyIn: Proceedings of the 31s International Symposium on Multiple-Valued Logic / 22-24 May 2001; Warsaw, Poland 2001, S. 49 - 58ISBN: 0-7695-1083-3Online Volltext: dx.doi.org/
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Digital circuit design based on the resonant-tunneling-hetero-junction-bipolar-transistorIn: Proceedings of the 13th Symposium on Integrated Circuits and Systems Design / SBCCI 2000; Manaus, Brazil; 18 - 24 September 2000 2000, S. 150 - 155ISBN: 0-7695-0843-XOnline Volltext: dx.doi.org/
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High f/sub T/, high current gain InP/InGaAs : C HBT grown by LP-MOVPE with non-gaseous sourcesIn: International Conference on Indium Phosphide and Related Materials: Conference Proceedings / Williamsburg, USA; 14 -18 May 2000 2000, S. 470 - 472ISBN: 0-7803-6320-5Online Volltext: dx.doi.org/
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InP-Based HBT with Graded InGaAlAs Base Layer Grown by LP-MOVPEIn: Proceedings of the European GaAs and other Semiconductor Application Symposium / GAAS AS 2000; Paris, France; 02.10.2000 - 03.10.2000 2000
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LP-MOVPE Growth of Carbon Doped In0.48Ga0.52P/GaAs HBT Using an All-Liquid-Source ConfigurationIn: 26th International Symposium on Compound Semiconductors / ISCS 2000; Berlin, Germany; 22.08.2000 - 26.08.2000 2000
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A monolithically integrated smart pixel based on a photoconductive switch and a n-i-p-i modulatorIn: Conference on Lasers and Electro-Optics / CLEO '99; Baltimore, USA; 23.05.1999 - 28.05.1999 1999ISBN: 1-55752-595-1Online Volltext: dx.doi.org/
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Consistent physical model for the gate-leakage and breakdown in InAlAs/InGaAs HFET'sIn: Proceedings of the 11th International Conference on Indium Phosphide and Related Materials / IPRM`99; Davos, Switz; 16 -20 May 1999 1999, S. 439 - 442ISBN: 0-7803-5562-8Online Volltext: dx.doi.org/
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LP-MOVPE grown GaAs- and InP-based HBTs using all-liquid alternative sourcesIn: Proceedings of the 11th International Conference on Indium Phosphide and Related Materials / IPRM`99; Davos, Switz; 16 -20 May 1999 1999, S. 467 - 470ISBN: 0-7803-5562-8Online Volltext: dx.doi.org/
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Novel MOBILE gates with low-power, relaxed parameter sensitivity, and increased driving capabilityIn: Proceedings of the 11th International Conference on Indium Phosphide and Related Materials / IPRM`99; Davos, Switz; 16 -20 May 1999 1999, S. 411 - 414ISBN: 0-7803-5562-8Online Volltext: dx.doi.org/
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Resonant tunneling transistors for threshold logic circuit applicationsIn: Proceedings of the 9th IEEE Great Lakes Symposium on VLSI / GLSVLSI '99; Ann Arbor, USA; 4 - 6 March 1999 1999, S. 344 - 345ISBN: 0-7695-0104-4Online Volltext: dx.doi.org/
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A threshold logic full adder based on resonant tunneling transistorsIn: 24th European Solid-State Circuits Conference / ESSCIRC 1998; The Hague; Netherlands; 22 - 24 September 1998 1998, S. 428 - 431Online Volltext: dx.doi.org/
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Analytic simulation of impact ionization in InAlAs/InGaAs HFET'sIn: Proceedings of the 10th International Conference on Indium Phosphide and Related Materials / IPRM`98, Tsukuba, Japan, 11.05.1998 - 15.05.1998 1998, S. 659 - 662
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InP-based HFET's and RTD's for high speed digital circuitryIn: Conference Proceedings of the International Symposium on Signals, Systems and Electronics / ISSSE'98; Pisa, Italy; 29 September - 2 October 1998 1998, S. 45 - 49ISBN: 0-7803-4900-8Online Volltext: dx.doi.org/
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Tunnelstrukturen - Grundlagen und BauelementeIn: Nanostrukturen in Halbleitern / Blockseminar am 1. und 2. Oktober 1997 im Rahmen des Graduiertenkollegs "Metrologie in Physik und Technik" der Technischen Universität Braunschweig und der Physikalisch-Technischen Bundesanstalt Braunschweig / Schlachetzki, Andreas (Hrsg.) 1998, S. 19 - 24ISBN: 3-89701-115-8
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A novel 3-D integrated RTD-HFET frequency multiplierIn: International Conference on Indium Phosphide and Related Materials 1997: Conference Proceedings / IPRM`97; Cape Cod, USA; 11-15 May 1997 1997, S. 373ISBN: 0-7803-3898-7 ISSN: 1092-8669Online Volltext: dx.doi.org/
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Full wave BIE analysis of travelling waves in unbiased/velocity saturated FET structures with linearly controlled current densityIn: 1997 IEEE MTT-S International Microwave Symposium Digest / Denver, USA; 8-13 June 1997 Jg. 1 1997, S. 159ISBN: 0-7803-3814-6Online Volltext: dx.doi.org/
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High power InAlAs/InGaAs/InP-HFET grown by MOVPEIn: International Conference on Indium Phosphide and Related Materials 1997: Conference Proceedings / IPRM`97; Cape Cod, USA; 11-15 May 1997 1997, S. 24 - 27ISBN: 0-7803-3898-7 ISSN: 1092-8669Online Volltext: dx.doi.org/
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Monodisperse Aerosol Particle Deposition : Prospects for NanoelectronicsIn: Micro-and-Nano-Engineering: Book of Abstracts / Micro-and-Nano-Engineering, Athen, September 15-18, 1997 1997
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Novel Monolithic RTD/3-Terminal Device Combinations on s.i. InP for Frequency MultiplicationIn: Proceedings of the State-of-the-Art Program of Compound Semiconductors / SOTAPOCS 1997, Montreal, Canada, 04.05.1997 - 09.05.1997 1997, S. 229 - 241
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Anomalous impact-ionization gate current in high breakdown InP-based HEMT'sIn: Proceedings of the 26th European Solid-State Device Research Conference / ESSDERC 1996; Bologna, Italy; 9 - 11 September 1996 1996, S. 1001 - 1004ISBN: 9782863321966 ISSN: 1930-8876
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Characterization and analysis of a new gate leakage mechanism at high drain bias in InAlAs/InGaAs heterostructure field-effect transistorsIn: 8th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / Schwaebisch Gmuend, Germany; 21.04.1996 - 25.04.1996 1996, S. 650 - 653ISBN: 0-7803-3283-0Online Volltext: dx.doi.org/
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On the design and modelling of novel 3-D integrated RTD/HBT device frequency multiplier circuitsIn: Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications / EDMO 1996; Leeds, UK; 25 - 26 November 1996 1996, S. 176 - 181ISBN: 0-7803-3130-3Online Volltext: dx.doi.org/
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High speed, high gain InP-based heterostructure FETs with high breakdown voltage and low leakageIn: 7th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / Sapporo, Japan; 9 - 13 May 1995 1995, S. 729 - 732
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Impact of pseudomorphic AlAs spacer layers on the gate leakage current of InAlAs/InGaAs heterostructure field-effect transistorsIn: 7th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / Sapporo, Japan; 9 - 13 May 1995 1995, S. 424 - 427
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InAlAs/InGaAs HFET with extremely high device breakdown using an optimized buffer layer structureIn: 6th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / Santa Barbara, USA; 27 - 31 March 1994 1994, S. 443 - 446ISBN: 0-7803-1476-XOnline Volltext: dx.doi.org/
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In₀.₅Ga₀.₅ spacer layer for high drain breakdown voltage InGaAs/InAlAs HFET on InP grown by MOVPEIn: 6th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / Santa Barbara, USA; 27 - 31 March 1994 1994, S. 439 - 442
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Low-pressure metallorganic vapor phase epitaxy (LP-MOVPE) growth and characterization of short-period strained-layer superlattices (SPSLSs) on InP substratesIn: Epitaxial Growth Processes / Los Angeles, USA; 26 - 27 January 1994 1994, S. 75 - 83ISBN: 0819414352 ISSN: 0277-786X
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Realization of highly strained short period InAs/GaAs superlattices by means of LP-MOVPE growth on InP substratesIn: 6th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / Santa Barbara, USA; 27 - 31 March 1994 1994, S. 579 - 580
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Characterization of Impact-Ionization in InAlAs/InGaAs/InP HEMT Structures using a Novel Photocurrent-Measurement TechniqueIn: Proceedings of the '5th International Conference on InP and Related Materials / IPRM´93; Paris, France; 19.04.1993 - 22.04.1993 1993, S. 243 - 250
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High-Resolution STEM-Z-Contrast Imaging and XRD : Two New Approaches for the Characterization of GaInP/GaAs-HeterostructuresIn: Proceedings of the '8th Conference on Microscopy of Semiconductor Materials / Oxford, U.K.; 05.04.1993 - 08.04.1993 1993, S. 497 - 502
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Pseudomorphic Ga0.5In0.5P barriers grown by MOVPE for high drain breakdown and low leakage HFET on InPIn: Proceedings of the '20th International Symposium on GaAs and Related Compounds / GaAs RC´93; Freiburg, Germany; 29.08.1993 - 02.09.1993 1993, S. 827 - 828
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Analysis of gate leakage on MOVPE grown InAlAs/InGaAs-HFETIn: Proceedings of the 22nd European Solid State Device Research Conference / ESSDERC '92, 14-17 September 1992, Leuven, Belgium 1992, S. 401 - 404ISBN: 0444894780 ISSN: 1930-8876
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Characterization of MOVPE grown GaInP as wide band gap Schottky barrier layerIn: LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics and Smart Pixels: 4th International Conference on Indium Phosphide and Related Materials / IPRM 1992; Newport, United States; 21 - 24 April 1992 1992, S. 538 - 541ISBN: 0780305221; 9780780305229Online Volltext: dx.doi.org/
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Evidence of oxygen in undoped InAIAs MOVPE layersIn: LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics and Smart Pixels: 4th International Conference on Indium Phosphide and Related Materials / IPRM 1992; Newport, United States; 21 - 24 April 1992 1992, S. 534 - 537ISBN: 0780305221; 9780780305229Online Volltext: dx.doi.org/
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Extremly low gate leakage InAlAs/InGaAs HEMTIn: Proceedings of the 19th International Symposium on GaAs and Related Compounds / GaAs RC`92; Karuizawa, Japan; 28.09.1992 - 02.10.1992 1992, S. 941 - 942
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Interdigitated electrode and coplanar waveguide InAlAs/InGaAs MSM photodetectors grown by LP MOVPEIn: Proceedings of the Fourth Indium Phosphide and Related Materials Conference / 4th International Conference on Indium Phosphide and Related Materials - IPRM'92, 21.-24. April 1992, Newport, United States 1992, S. 596 - 599ISBN: 0-7803-0522-1Online Volltext: dx.doi.org/
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On the optimization and reliability of ohmic-And Schottky contacts to InAlAs/InGaAs HFETIn: LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics and Smart Pixels: 4th International Conference on Indium Phosphide and Related Materials / IPRM 1992; Newport, United States; 21 - 24 April 1992 1992, S. 238 - 241ISBN: 0780305221; 9780780305229Online Volltext: dx.doi.org/
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Material characterisation of InGaAs/InAlAs heterostructure field effect transistors with heavily doped n-type InAlAs donor layerIn: Third International Conference on Indium Phosphide and Related Materials: Conference Proceedings / 3rd International Conference on Indium Phosphide and Related Materials; Cardiff, Wales; 8 - 11 April 1991 1991, S. 284 - 287ISBN: 0-87942-626-8Online Volltext: dx.doi.org/
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Technology for III/V-Semiconductor HFET DevicesIn: III-V Microelectronics 1991, S. 277 - 313ISBN: 978-0-444-88990-4Online Volltext: dx.doi.org/
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Dispersion und Arbeitspunktabhängigkeit des Ausgangswiderstandes in Heterostruktur-FeldeffekttransistorenIn: ITG-Fachtagung "Heterostruktur-Bauelemente" / Schwäbisch Gmünd, Germany; 25.04.1990 - 27.04.1990 1990, S. 267 - 271
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Electro-optical modulation in AlGaAs/GaAs distributed feedback structuresIn: High Speed Phenomena in Photonic Materials and Optical Bistability / The International Congress on Optical Science and Engineering, 12-16 March 1990, The Hague, The Netherlands / Jäger, Dieter (Hrsg.) 1990, S. 202 - 208ISBN: 0-8194-0327-XOnline Volltext: dx.doi.org/
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Hall-equivalent determination of carrier mobility and concentration in SQW-, MQW-, and HIG-FET channelsIn: Proceedings of the 16th International Symposium on GaAs and Related Compounds / GaAs RC´89; Karuizawa, Japan; 25 - 29 September 1989; Ikoma, T. 1990, S. 501 - 506ISBN: 0-85498-065-2
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Herstellung und Untersuchung von Heterostruktur-Feldeffekttransistoren mit isoliertem Gate (HIGFET)In: Proceedings ITG-Fachtagung "Heterostruktur-Bauelemente" / Schwaebisch Gmuend, Germany; 25.04.1990 - 27.04.1990 1990, S. 255 - 260
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Photonic Switching and SEED Effect in AlGaAs/GaAs DFB Structures Grown by MOVPEIn: Photonic Switching II: Proceedings of the International Topical Meeting / International Topical Meeting, Kobe, Japan, April 12–14, 1990 / Tada, Kunio; Hinton, H. Scott (Hrsg.) 1990, S. 185 - 189ISBN: 978-3-642-76023-5; 978-3-642-76025-9Online Volltext: dx.doi.org/
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Submicron pseudomorphic Al0.2Ga0.8As/InGaAs-HFET made by Conventional Optical Lithography for Microwave Circuit Applications above 100GHzIn: Proceedings of the '20th European Solid State Device Research Conference / ESSDERC`90; Nottingham, U.K.; 10.09.1990 - 13.09.1990 1990, S. 105 - 108
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Submikrometer Al0.2Ga0.8As/In0.25Ga0.75As Mehrfinger-HFET für Mikrowellenschaltungen über 100 GHz hergestellt mit optischer KontaktlithographieIn: Proceedings ITG-Fachtagung "Heterostruktur-Bauelemente" / Schwaebisch Gmuend, Germany; 25.04.1990 - 27.04.1990 1990, S. 29 - 30
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Shallow and Deep Impurity Investigations : The Important Step Towards a Microwave Field-Effect Transistor Working at Cryogenic TemperaturesIn: Properties of Impurity States in Superlattice Semiconductors / Fong, C. Y.; Batra, Inder P.; Ciraci, S. (Hrsg.) 1988, S. 135 - 146ISBN: 978-1-4684-5555-7; 978-1-4684-5553-3Online Volltext: dx.doi.org/
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Device performance and transport properties of HFETs at low temperaturesIn: Proceedings of the 14th International Symposium on GaAs and Related Compounds / GaAs RC´87; Heraklion, Greece; 28.09.1987 - 01.10.1987 1987, S. 681 - 684
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Improved 77K Performance of AlAs/GaAs Superlattice Heterostructure Field-Effect-Transistors (SL HFET)In: Proceedings of the 13th International Symposium on Gallium Arsenide and Related Compounds / Las Vegas, Nevada; 28 September – 1 October 1986 1987, S. 563 - 568ISSN: 0305-2346; 0951-3248
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Application of the Magnetotransconductance Mobility Measurements Method to Two-Dimensional Electron Gas FETsIn: Semiconductor Quantum Well Structures and Superlattices: Papers / MRS-Europe Spring Meeting (Symposium 3); 13-15 Mai 1985; Strasbourg/France 1986, S. 91 - 96ISBN: 2868830153
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Triple-barrier resonant tunneling diode
1st MARIE IRTG Spring School, International Research Training Group (IRTG), DFG CRC/TRR 196 MARIE, 28-29 March 2019, Dortmund, Germany,(2019) -
On the sensitivity of triple-barrier resonant-tunneling (sub-) mm-wave detectors
Progress in Electromagnetics Research Symposium, 2018, Toyama, Japan,Toyama (2018) -
Subharmonic signal generation and injection locking in resonant-tunneling-diode Terahertz oscillator
79th Japan Society of Applied Physics (JSAP 2018) Autumn Meeting, Nagoya Congress Center, Nagoya, Japan Sept. 18-21, 2018,Nagoya (2018) -
Effect of AIN layer thickness on wafer bowing and vertical breakdown voltage of GaN-on-Si
European Workshop on MOVPE and Rel. Growth Techniques (EW MOVPE), Aachen, Germany, 02.06.2013 - 05.06.2013,Aachen, Germany (2013) -
Investigation of the doping profile of Zn-doped GaAs nanowires by a multitip STM
European Workshop on MOVPE and Rel. Growth Techniques (EW MOVPE), Aachen, Germany, 02.06.2013 - 05.06.2013,Aachen, Germany (2013) -
Axial doping profile in VLS grown GaAs:Zn nanowires
13th European Workshop on Metalorganic Vapor Phase Epitaxy, 7. – 10. Juni 2009, Ulm, Germany,(2009) -
High-Speed Monostable-Bistable Transition Logic Element Gates with Optical Inputs at 1.3µm/1.55µm
XXII Conference on Design of Circuits and Integrated Systems 2007 (DCIS); Sevilla, Spain; 21.11.2007 - 23.11.2007,Sevilla, Spain (2007) -
High Performance III/V RTD and PIN Diodes on a silicon substrate
6th Topical Workshop on Heterostructure Microelectronics, TWHM Awaji Island, Hyogo, Japan, Aug. 22-25, 2005,Awaji Island, Hyogo (2005) -
Study of ohmic contacts and interface layers of carbon doped GaAsSb/InP heterostructures for DHBT application
12th International Conference on Metalorganic Vapour Phase Epitaxy (MOVPE), Lahaina, Hawaii, USA, 30.05.2004 - 04.06.2004,Lahaina, USA (2004) -
Tunneling Diodes for Compact High Speed Circuits
3rd Joint Symposium on Opto- and Microelectronic Devices and Circuits (SODC), Wuhan, China, 21.05.2004 - 30.05.2004,Wuhan, China (2004) -
LP-MOVPE growth for high-speed electronic devices on InP
10th European Workshop on MOVPE and Rel. Growth Techniques (EW MOVPE), Leece, Italy, 08.06.2003 - 11.06.2003,Leece, Italy (2003) -
Deposition of Gas-Phase Generated PbS Nanocrystals onto Patterned Substrates
7th International Conference on Nanometer-scale Science and Technology (Nano), 21th European Conference on Surface Science (ECOSS) , Malmö, Sweden, 24.06.2005 - 28.06.2002,Malmö, Sweden (2002) -
Spontaneous Group III and V Superlattice Ordering in InGaAsP
26th International Conference on the Physics of Semiconductors (ICPS), Edingburgh, U.K., 29.07.2002 - 02.08.2002,Edingburgh, U.K. (2002) -
Spontaneous Group III and V Superlattice Ordering in InGaAsP
International Conference on Signal Processing (ICSP), Beijing, China, 26.08.2002 - 30.08.2002,Beijing, China (2002) -
Resonant-Tunnelling 3-Terminal Devices for High-Speed Logic Application
24th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Aegean Sea, Greece, 29.05.2000 - 02.06.2000,Aegean Sea, Greece (2000) -
All Liquid Source Growth of Carbon Doped In0.53Ga0.47As/InP HBT by Means of LP-MOVPE
8th Europ. Workshop on MOVPE and Rel. Growth Techniques (EW MOVPE), Prag, Czech Republic, 08.06.1999 - 11.06.1999,Prag, Czech Republic (1999) -
Winziger als die Mikro-Elektronik
Forum Forschung '99, Gerhard-Mercator-Universität Duisburg, 1999,Duisburg (1999) -
Manufacturability of III/V Resonant Tunneling Diodes for Logic Circuit Applications
3rd Workshop on Innovative Circuits and Systems for Nano Electronics (Nano-EL), München, Germany, 05.10.1998 - 06.10.1998,(1998) -
3D-Integration of Quantum-Effect Devices (RTD) in HBT's by Means of LP-MOVPE
7th European Workshop on MOVPE and Rel. Growth Techniques (EW MOVPE), Berlin, Germany, 08.06.1997 - 11.06.1997,Berlin, Germany (1997) -
HR XRD for the Analysis of Ultra-Thin Centro-Symmetric Strained DB-RTD Heterostructures
European Materials Research Conference (E-MRS), Strasbourg, France, 16.06.1997 - 20.06.1997,Strasbourg, France (1997) -
Merged Heterostructure FET/RTD Combination for (Sub-)Millimeter-Wave Generation
4th International Workshop on Terahertz Electronics; Erlangen, Germany; 05.09.1996 - 06.09.1996,Erlangen, Germany (1996) -
Modeling the Potential of Novel 3-D Integrated RTD/HFET Frequency Multiplier Circuits
International Workshop on Millimeterwaves, Orvieto, Italy, 11.04.1996 - 12.04.1996,Orvieto, Italy (1996) -
On Carbon Doping of InGaAs for InP Based Heterojunction Bipolar Transistors
20th European Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Vilnius, Litauen, 19.05.1996 - 22.05.1996,Vilnius, Litauen (1996) -
Plasma-CVD für Siliziumnitrid auf III-V Halbleitern
MOCVD- und Plasma-CVD Prozesse für opto- und mikroelektronische Anwendungen; Aachen, Germany; 05.11.1996,Aachen, Germany (1996) -
Carbon-Doping of MOVPE-Grown LT-In0.53Ga0.47As : On the Doping Mechanism and InGaAs/InP HBT Device Characteristics
European Workshop on MOVPE and Rel. Growth Techniques (EW MOVPE), Gent, Belgium, 25.06.1995 - 28.06.1995',Gent, Belgium (1995) -
Characterization of Highly Strained GaxIn1-xP/InP Interfaces (x = 0.5)
9th Conference on Microscopy of Semiconductor Materials, Oxford, U.K., 20.03.1995 - 23.03.1995,Oxford, U.K. (1995) -
LP-growth and characterization of short-period strained-layer superlattices (SPSLSs) on InP substrates
5th European Workshop on MOVPE and Rel. Growth Techniques (EW MOVPE), Malmö, Sweden, 02.06.1993 - 04.06.1993,Malmö, Sweden (1993) -
InyGa₁₋yAs{plus 45 degree rule}GaAs interface smoothing by GaAs monolayers in highly strained graded superlattice channels (0.2 ≤ y ≤ 0.4) for pseudomorphic AlₓGa₁₋ₓAs{plus 45 degree rule}InyGa₁₋yAs HFET
7th International Conference on Molecular Beam Epitaxy (MBE), Schwäbisch Gmünd, Germany, 24.08.1992 - 28.08.1992,Schwäbisch Gmünd, Germany (1992) -
Electrooptical light modulation and SEED effect in surface oriented AlGaAs/GaAs Bragg reflectors
Meeting on Future Directions for Optics in Computers,Besancon, France (1990)