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Die folgenden Publikationen sind in der Online-Universitätsbibliographie der Universität Duisburg-Essen verzeichnet. Weitere Informationen finden Sie gegebenenfalls auch auf den persönlichen Webseiten der Person.
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High-Frequency Measurements on InAs Nanowire Field-Effect Transistors using Coplanar Waveguide ContactsIn: IEEE Transactions on Nanotechnology Jg. 9 (2010) Nr. 4, S. 432 - 437ISSN: 1536-125X; 1941-0085Online Volltext: dx.doi.org/
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Two-dimensional physical simulation of InGaAs/InP heterostructure bipolar transistors
6th International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, EXMATEC 2002; Budapest; Hungary; 26 - 29 May 2002,In: Physica Status Solidi (C): Current Topics in Solid State Physics (2003) Nr. 3, S. 922 - 927ISSN: 1610-1634; 1610-1642; 1862-6351Online Volltext: dx.doi.org/ -
Investigation and modeling of impact lonization with regard to the RF and noise behavior of HFETIn: IEEE Transactions on Microwave Theory and Techniques Jg. 45 (1997) Nr. 6, S. 977 - 983ISSN: 0018-9480; 1557-9670Online Volltext: dx.doi.org/
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InAlAs/InGaAs/InP HFET with suppressed impact ionization using dual-gate cascode-devicesIn: IEEE Electron Device Letters Jg. 17 (1996) Nr. 10, S. 488 - 490ISSN: 0741-3106; 1558-0563Online Volltext: dx.doi.org/
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Investigation of leakage current behaviour of Schottky gates on InAlAs/InGaAs/InP HFET structures by a 1D modelIn: Solid State Electronics Jg. 38 (1995) Nr. 10, S. 1775 - 1780ISSN: 0038-1101; 1879-2405Online Volltext: dx.doi.org/
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Drastic Reduction of Gate Leakage in InAlAs/InGaAs HEMT’s Using a Pseudomorphic InAlAs Hole Barrier LayerIn: IEEE Transactions on Electron Devices (T-ED) Jg. 41 (1994) Nr. 10, S. 1685 - 1690ISSN: 1557-9646; 0018-9383Online Volltext: dx.doi.org/
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Numerical analysis of InP-JFET by use of a quasi 2D-modelIn: Microelectronic Engineering Jg. 19 (1992) Nr. 1-4, S. 39 - 42ISSN: 0167-9317; 1873-5568Online Volltext: dx.doi.org/
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On-wafer microwave measurement setup for investigations on hemt's and high tc Superconductors at Cryogenic Temperatures Down to 20 KIn: IEEE Transactions on Microwave Theory and Techniques Jg. 40 (1992) Nr. 12, S. 2325 - 2331ISSN: 1557-9670; 0018-9480Online Volltext: dx.doi.org/
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Properties of p-type heterostructure field effect transistors at cryogenic temperatures
4th International Conference on Modulated Semiconductor Structures ; July 17-21, 1989, Ann Arbor, Michigan, USA,In: Surface Science Jg. 228 (1990) Nr. 1-3, S. 472 - 475ISSN: 0039-6028; 1879-2758Online Volltext: dx.doi.org/ -
Simulation of short‐channel and surface effects in submicron GaAs MESFETsIn: European Transactions on Telecommunications Jg. 1 (1990) Nr. 4, S. 401 - 409ISSN: 1541-8251; 1124-318XOnline Volltext: dx.doi.org/
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Simulation of surface effects in planar GaAs MESFET structures by use of a quasi‐2D modelIn: European Transactions on Telecommunications Jg. 1 (1990) Nr. 4, S. 389 - 392ISSN: 1541-8251; 1124-318XOnline Volltext: dx.doi.org/
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d.c.- and r.f.-characterisation of conventional and superlattice heterostructure field-effect transistors at low temeperaturesIn: Solid State Electronics Jg. 33 (1990) Nr. 11, S. 1393 - 1400ISSN: 0038-1101; 1879-2405Online Volltext: dx.doi.org/
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RF Measurements and Characterization of Heterostructure Field-Effect Transistors at Low TemperaturesIn: IEEE Transactions on Microwave Theory and Techniques Jg. 37 (1989) Nr. 9, S. 1380 - 1388ISSN: 1557-9670; 0018-9480Online Volltext: dx.doi.org/
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Gate-Voltage Dependent Transport Measurements on Heterostructure Field-Effect TransistorsIn: IEEE Transactions on Electron Devices (T-ED) Jg. 33 (1986) Nr. 5, S. 646 - 650ISSN: 1557-9646; 0018-9383Online Volltext: dx.doi.org/
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Improved Short-Channel GaAs MESFET's by Use of Higher Doping ConcentrationIn: IEEE Transactions on Electron Devices (T-ED) Jg. 31 (1984) Nr. 8, S. 1032 - 1037ISSN: 1557-9646; 0018-9383Online Volltext: dx.doi.org/
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Optimisation of modulation-doped heterostructures for TEGFET operation at room temperatureIn: Electronics Letters Jg. 20 (1984) Nr. 15, S. 615 - 617ISSN: 0013-5194; 1350-911XOnline Volltext: dx.doi.org/
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A new temperature noise model of HFET with special emphasis on a gate-leakage current and investigation of the bias dependence of the equivalent noise sourcesIn: 25th European Microwave Conference: Volume 1 / EuMC 1995; Bologna, Italy; 4 September 1995 2015, S. 205 - 210ISBN: 9780000000002Online Volltext: dx.doi.org/
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Direct calculation of the HBT small-signal equivalent circuit with special emphasize to the feedback capacitanceIn: 25th European Microwave Conference: Volume 2 / EuMC 1995; Bologna, Italy; 4 September 1995 2015, S. 1032 - 1036ISBN: 9780000000002Online Volltext: dx.doi.org/
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Design of low-power RTD-based-VCOs for Ka-band applicationIn: German Microwave Conference Digest of Papers / GeMiC 2010; Berlin, Germany; 15 - 17 March 2010 2010, S. 39 - 42ISBN: 978-1-4244-4933-0; 978-3-9812-6681-8
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Large-signal performance of resonant tunnelling diodes in K-Band oscillatorsIn: Proceedings of the 38th European Microwave Conference / EuMC 2008; Amsterdam, Netherlands; 27 - 31 October 2008 2008, S. 1469 - 1472ISBN: 978-2-87487-006-4Online Volltext: dx.doi.org/
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Monostable-bistable threshold logic elements in a fully complementary optical receiver circuit for high frequency applicationsIn: 20th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM 2008; Versailles, France; 25 - 29 May 2008 2008, S. 4702921ISBN: 978-1-4244-2258-6; 978-1-4244-2259-3Online Volltext: dx.doi.org/
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INP-hemt-tia with differential optical input using vertical high topology pin-diodesIn: 19th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM '07; 14 - 18 May 2007; Matsue, Japan 2007, S. 107 - 109ISBN: 1-4244-0874-1Online Volltext: dx.doi.org/
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Large-signal analysis and ac modelling of sub-micron resonant tunnelling diodesIn: 2nd European Microwave Integrated Circuits Conference: Conference Proceedings / EuMIC 2007; Munich, Germany; 8 - 12 October 2007 2007, S. 207 - 210ISBN: 978-2-87487-002-6Online Volltext: dx.doi.org/
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Sub-nanosecond pulse generation using resonant tunneling diodes for impulse radioIn: IEEE International Conference on Ultra-Wideband 2007 / ICUWB; 24 - 27 September 2007; Singapore 2007, S. 354 - 359ISBN: 978-1-4244-0520-6; 978-1-4244-0521-3Online Volltext: dx.doi.org/
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Low-temperature DC and RF measurement and modelling of InGaAs-InAlAs resonant tunneling diodes down to 15 KIn: Proceedings of the 1st European Microwave Integrated Circuits Conference / EuMIC 2006; Manchester; United Kingdom; 10 - 13 September 2006 2006, S. 344 - 347ISBN: 2-9600551-8-7Online Volltext: dx.doi.org/
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Investigation of the rf-noise behaviour of InP based DHBT with InGaAs base and GaAsSb baseIn: Noise in Devices and Circuits II / Noise in Devices and Cirquits II, 26 - 28 May 2004, Maspalomas, Spain / Danneville, Francois; Bonani, Fabrizio; Deen, M. Jamal; Levinshtein, Michael E. (Hrsg.) 2004, S. 164 - 172ISBN: 0-8194-5396-XOnline Volltext: dx.doi.org/
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A consistent and scalable PSPICE HFET-model for DC- and S-parameter-simulationIn: IEEE International Conference on Microelectronic Test Structures / ICMTS 2002; Cork, Ireland; 8 - 11 April 2002 2003, S. 67 - 70ISBN: 0-7803-7464-9Online Volltext: dx.doi.org/
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Consistent small-signal and rf-noise parameter modelling of carbon doped InP/InGaAs HBTIn: International IEEE Microwave Symposium Digest / MTT-S 2001; Phoenix, United States; 20 - 25 May 2001 Jg. 1 2001, S. 1765 - 1768ISBN: 0-7803-6538-0Online Volltext: dx.doi.org/
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11-stage ring oscillator with nonlinear negative feedback for high speed digital applicationsIn: International Conference on Indium Phosphide and Related Materials: Conference Proceedings / Williamsburg, USA; 14 -18 May 2000 2000, S. 577 - 580ISBN: 0-7803-6320-5Online Volltext: dx.doi.org/
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Consistent physical model for the gate-leakage and breakdown in InAlAs/InGaAs HFET'sIn: Proceedings of the 11th International Conference on Indium Phosphide and Related Materials / IPRM`99; Davos, Switz; 16 -20 May 1999 1999, S. 439 - 442ISBN: 0-7803-5562-8Online Volltext: dx.doi.org/
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A new consistent rf-and noise model with special emphasis on impact ionisation for dual-gate HFET in cascode configurationIn: 28th European Microwave Conference / EuMC 1998; Amsterdam, Netherlands; 5 - 9 October 1998 Jg. 1 1998, S. 323 - 327Online Volltext: dx.doi.org/
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Analytic simulation of impact ionization in InAlAs/InGaAs HFET'sIn: Proceedings of the 10th International Conference on Indium Phosphide and Related Materials / IPRM`98, Tsukuba, Japan, 11.05.1998 - 15.05.1998 1998, S. 659 - 662
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InP-based HFET's and RTD's for high speed digital circuitryIn: Conference Proceedings of the International Symposium on Signals, Systems and Electronics / ISSSE'98; Pisa, Italy; 29 September - 2 October 1998 1998, S. 45 - 49ISBN: 0-7803-4900-8Online Volltext: dx.doi.org/
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InP-based logic gates for low power monolithic optoelectronic circuitsIn: Proceedings of the IEEE International Conference on Electronics, Circuits and Systems / ICECS'98 - Surfing the Waves of Science and Technology; Lisboa, Portugal; 7 - 10 September 1998 Jg. 3 1998, S. 393 - 396ISBN: 0-7803-5008-1Online Volltext: dx.doi.org/
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InAlAs/InGaAs/InP dual-gate-HFET's : New aspects and propertiesIn: International Conference on Indium Phosphide and Related Materials 1997: Conference Proceedings / IPRM`97; Cape Cod, USA; 11-15 May 1997 1997, S. 181 - 184ISBN: 0-7803-3898-7 ISSN: 1092-8669Online Volltext: dx.doi.org/
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Investigation and modeling of impact ionization with regard to the RF- and noise behaviour of HFETIn: Proceedings of the 1996 IEEE MTT-S International Microwave Symposium Digest / San Franscisco, USA; 17 - 21 June 1996 1996, S. 512178ISBN: 0-7803-3246-6 ISSN: 0149-645XOnline Volltext: dx.doi.org/
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On the advantages of InAlAs/InGaAs/InP dual-gate-HFET's in comparison to conventional single-gate-HFET'sIn: 8th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / Schwaebisch Gmuend, Germany; 21.04.1996 - 25.04.1996 1996, S. 462 - 465ISBN: 0-7803-3283-0Online Volltext: dx.doi.org/
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Investigation of the High-Frequency Performance of AlGaAs/GaAs HBTs Down to 20KIn: Proceedings of Bipolar/BiCMOS Circuits and Technology Meeting / BCTM´93; Minenapolis, USA; 04.10.1993 - 05.10.1993 1993, S. 32 - 35
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Numerical investigation of leakage current of Schottky contacts on InAlAs/InGaAs/InP heterostructuresIn: Proceedings of the 23rd European Solid State Device Research Conference / ESSDERC '93; Grenoble, France; 13 - 16 September 1993 1993, S. 463 - 466ISBN: 2-86332-135-8
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RF-Characterization of AlGaAs/GaAs HBT Down to 20KIn: Proceedings of the '20th International Symposium on GaAs and Related Compounds / GaAs RC´93; Freiburg, Germany; 29.08.1993 - 02.09.1993 1993, S. 177 - 182
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Numerical analysis of InP-JFET by use of a Quasi 2D-modelIn: Proceedings of the 22nd European Solid State Device Research Conference / ESSDERC '92, 14-17 September 1992, Leuven, Belgium 1992, S. 39 - 42ISBN: 0444894780 ISSN: 1930-8876
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On-Wafer RF Measurement Setup for the Characterization of HEMT's and High TC Superconductors at Very Low Temperatures Down to 20KIn: Proceedings of IEEE International Microwave Symposium (MTT-S) / Albuquerque, USA; 01.06.1992 - 05.06.1992 1992, S. 1439 - 1442
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RF Investigations on HEMT's at Cryogenic Temperatures Down to 20K using an On-Wafer Microwave Measurement SetupIn: Proceedings of the 22nd European Microwave Conference / EuMC`92; Helsinki, Finland; 24.08.1992 - 27.08.1992 1992, S. 151 - 156
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Dispersion und Arbeitspunktabhängigkeit des Ausgangswiderstandes in Heterostruktur-FeldeffekttransistorenIn: ITG-Fachtagung "Heterostruktur-Bauelemente" / Schwäbisch Gmünd, Germany; 25.04.1990 - 27.04.1990 1990, S. 267 - 271
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Submicron pseudomorphic Al0.2Ga0.8As/InGaAs-HFET made by Conventional Optical Lithography for Microwave Circuit Applications above 100GHzIn: Proceedings of the '20th European Solid State Device Research Conference / ESSDERC`90; Nottingham, U.K.; 10.09.1990 - 13.09.1990 1990, S. 105 - 108
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Submikrometer Al0.2Ga0.8As/In0.25Ga0.75As Mehrfinger-HFET für Mikrowellenschaltungen über 100 GHz hergestellt mit optischer KontaktlithographieIn: Proceedings ITG-Fachtagung "Heterostruktur-Bauelemente" / Schwaebisch Gmuend, Germany; 25.04.1990 - 27.04.1990 1990, S. 29 - 30
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Shallow and Deep Impurity Investigations : The Important Step Towards a Microwave Field-Effect Transistor Working at Cryogenic TemperaturesIn: Properties of Impurity States in Superlattice Semiconductors / Fong, C. Y.; Batra, Inder P.; Ciraci, S. (Hrsg.) 1988, S. 135 - 146ISBN: 978-1-4684-5555-7; 978-1-4684-5553-3Online Volltext: dx.doi.org/
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Device performance and transport properties of HFETs at low temperaturesIn: Proceedings of the 14th International Symposium on GaAs and Related Compounds / GaAs RC´87; Heraklion, Greece; 28.09.1987 - 01.10.1987 1987, S. 681 - 684
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High Transconductance Submicron Self-Aligned InGaAs JFETsIn: Proceedings of the 14th International Symposium on GaAs and Related Compounds / GaAs RC´87; Heraklion, Greece; 28.09.1987 - 01.10.1987 1987, S. 721 - 724
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Application of the Magnetotransconductance Mobility Measurements Method to Two-Dimensional Electron Gas FETsIn: Semiconductor Quantum Well Structures and Superlattices: Papers / MRS-Europe Spring Meeting (Symposium 3); 13-15 Mai 1985; Strasbourg/France 1986, S. 91 - 96ISBN: 2868830153
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InGaAs-JFETs with p+-Gates Diffused from Spin-on Films for Ka-Band OperationIn: Proceedings of the 12th International Symposium on GaAs and Related Compounds / GaAs RC´85; Karuizawa, Japan; 01.09.1985 1986, S. 619 - 624ISBN: 0854981705
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Numerical Investigation of GaAs MESFETs and InGaAs JFETs and Comparison with Experimental ResultsIn: Proceedings of the 3rd International Workshop on Physics of Semiconductor Devices / Madras, India; 27.11.1985 - 02.12.1985 1985, S. 23 - 30
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GaAs MESFETs with a Highly Doped ChannelIn: International Conference on Solid State Devices and Materials / ICSSDM´84; Kobe, Japan; 30.08. - 01.09.1984 1984, S. 375 - 378ISBN: 4930813077
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GaAs-MESFETs with Highly Doped (1018cm-3) Channels : An Experimental and Numerical InvestigationIn: Proceedings of the International Electron Device Meeting / IEDM`83; Washington D.C., USA; 05.12.1983 - 07.12.1983 1983, S. 621 - 624ISSN: 0163-1918
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Improved Performance of Micron and Submicron Gate GaAs-MESFETs due to High Electron Concentrations (n = 1018cm-3) in the ChannelIn: Proceedings of the IEEE GaAs IC Symposium / GaAs IC´83; Phoenix, USA; 01.10.1983 1983, S. 153 - 156
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High Frequency NoiseIn: Wiley Encyclopedia of Electrical and Electronics Engineering / Webster, John G. (Hrsg.) Jg. 14 1999, S. 392 - 410ISBN: 9780471139553
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Optical Sensitivity of a Monolithic Integrated InP PIN-HEMT-HBT Transimpedance Amplifier
European Microwave Workshops and Chort Courses, EuMW`04; Amsterdam, The Netherlands; 11.10.2004 - 15.10.2004,Amsterdam, The Netherlands (2004) -
RF- and Noise Modeling of Semiconductor Devices based on InP
ITG Fachtagung 2003,(2003) -
Scaling of Small-Signal and RF-Noise Parameters with Respect to the Emitter-Area of Single HBT based on InP
14th Workshop on Semiconductor Modeling and Simulation of Electron Devices (MSED), Barcelona, Spain, 16.10.2003 - 17.10.2003,Barcelona, Spain (2003) -
A Consistent PSPICE-Model for InP HBT
13th Workshop on Physical Simulation of Semiconductor Devices (PSSD), Ilkley, West Yorkshire, U.K., 25.03.2002 - 26.03.2002,Ilkley, U.K. (2002) -
RF-Simulation of InGaAs/InP Heterostructure Bipolar Transistors
13th Workshop on Physical Simulation of Semiconductor Devices (PSSD), Ilkley, West Yorkshire, U.K., 25.03.2002 - 26.03.2002,Ilkley, U.K. (2002) -
A Consistent and Scalable PSPICE Compound Semiconductor HFET Model for DC- and S-Parameter Simulation
9th European GaAs and other Semiconductor Application Symposium (GAAS AS), London, U.K., 24.09.2001 - 25.09.2001,London, U.K. (2001) -
A New Consistent and Scalable PSPICE Model for Enhancement and Depletion-Type HFET
11th Conference and Exhibition on Microwaves, Radio Communication and Electromagnetic Compatibility (MIOP), Stuttgart, Germany, 08.05.2001 - 10.05.2001,Stuttgart, Germany (2001) -
Carbon Doped InP/InGaAs HBT : Consistent Small_Signal and RF-Noise Modelling and Characterization
Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Cagliari, Italy, 27.05.2001 - 30.05.2001,Cagliari, Italy (2001) -
A New Optimization Strategy Based on the Theory of Evolution for the RF-Modeling of HFET
International Workshop on Exp. Based FET Device Modell. & Rel. Nonlin. Circuit Design; Kassel, Germany; 17.07.1997 - 18.07.1997,Kassel, Germany (1997) -
A New RF- and Noise Model with Special Emphasis on Impact Ionization for HFET
Conference and Exhibition on Microwaves, Radio Communication and Electromagnetic Compatibility; MIOP 1997; Sindelfingen, Germany; 22.04.1997 - 24.04.1997,Sindelfingen, Germany (1997) -
Theory of Evolution : New Optimization Strategies for the Modeling of HFET-RF-Noise-Parameters
Conference and Exhibition on Microwaves, Radio Communication and Electromagnetic Compatibility; MIOP 1997; Sindelfingen, Germany; 22.04.1997 - 24.04.1997,Sindelfingen, Germany (1997) -
Fabrication and High Frequency Analysis of InAlAs/InGaAs/InP Dual-Gate-HFETs with Special Emphasis to Impact Ionization
European Heterostructure Technology Workshop (HETECH); Lille, France; 15.09.1996 - 17.09.1996,Lille, France (1996) -
New Direct Parameter Extraction Technique for Heterojunction Bipolar Transistors Using an Extended Equivalent Circuit
International Workshop on Semiconductor Characterization, Gaithersburg, USA, 30.01.1995 - 02.02.1995,Gaithersburg, USA (1995) -
Simulation of Gate Leakage due to Impact Ionization in InAlAs/InGaAs-HFET
4th Int. Seminar on Simulation of Devices and Technologies (ISSDT), Kruger Nat. Park, South Africa, 15.11.1995 - 17.11.1995,Kruger Nat. Park, South Africa (1995) -
Optimierung von Feldeffekttransistoren aus III-V-Halbleitern für den Einsatz in monolithisch integrierten Breitbandverstärkern
Conference and Exhibition on Microwaves, Radio Communication and Electromagnetic Compatibility (MIOP); Stuttgart, Germany; 24.04.1990 - 26.04.1990,Stuttgart (1990)