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Die folgenden Publikationen sind in der Online-Universitätsbibliographie der Universität Duisburg-Essen verzeichnet. Weitere Informationen finden Sie gegebenenfalls auch auf den persönlichen Webseiten der Person.
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Current gain increase by SiNₓ passivation in self-aligned InGaAs/InP heterostructure bipolar transistor with compositionally graded baseIn: Solid State Electronics Jg. 48 (2004) Nr. 9, S. 1637 - 1641Online Volltext: dx.doi.org/
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Circuit and application aspects of tunnelling devices in a MOBILE configurationIn: International Journal of Circuit Theory and Applications Jg. 31 (2003) Nr. 1, S. 83 - 103Online Volltext: dx.doi.org/
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Passivation of graded-base InP/InGaAs/InP double heterostructure bipolar transistors by room-temperature deposited SiNₓIn: International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM`03; Santa Barbara, USA; 12.05.2003 - 16.05.2003 2003, S. 156 - 159Online Volltext: dx.doi.org/
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A novel 1.55µm HBT-Electroabsorption modulatorIn: Proceedings of the International Topical Meeting on Microwave Photonics (MWP `01) / MWP `01, 7-9 Jan. 2002, Long Beach, CA, USA 2002, S. 21 - 24Online Volltext: dx.doi.org/
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Asynchronous circuit design based on the RTBT monostable-bistable logic transition element (MOBILE)In: Proceedings of the 15th Symposium on Integrated Circuits and Systems Design / SBCCI 2002; Porto Alegre, Brazil; 9 - 14 September 2002 2002, S. 365 - 370Online Volltext: dx.doi.org/
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Different approaches for integrating HBTs and EAMsIn: The 10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications / EDMO 2002 ; 18 - 19 November; Manchester, UK 2002, S. 149 - 154Online Volltext: dx.doi.org/
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Experimental threshold logic implementations based on resonant tunnelling diodesIn: Proceedings of the 9th IEEE International Conference on Electronics, Circuits, and Systems / ICECS 2002; 15 - 18 September 2002; Dubrovnik, Croatia Jg. 2 2002, S. 669 - 672Online Volltext: dx.doi.org/
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Monolithically integrated optoelectronic circuits using HBT, EAM, and TEATIn: Proceedings of the International Topical Meeting on Microwave Photonics (MWP 2002) / MWP 2002, November 5-8, Awaji, Japan 2002, S. 349 - 352
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Pseudo dynamic gate design based on the Resonant Tunneling-Bipolar Transistor (RTBT)In: Proceedings of the 32nd European Solid-State Device Research Conference / ESSDERC 2002; Firenze, Italy; 24 - 26 September 2002 / Gnani, E.; Baccarani, G.; Rudan, M. (Hrsg.) 2002, S. 211 - 214Online Volltext: dx.doi.org/
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Waveguide HBT electroabsorption modulators : Devices and circuitsIn: 14th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / Stockholm, Sweden; 12 - 16 May 2002 2002, S. 123 - 126Online Volltext: dx.doi.org/
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Waverguide HBT electroabsorption modulators : devices and circuitsIn: Proceedings of the 14th International Conference on Indium Phosphide and Related Materials (IPRM) / IPRM: May 12-16, 2002, Stockholm, Sweden 2002, S. 123 - 126
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Integration of heterostructure bipolar transistor and electroabsorption waveguide modulator based on a multifunctional layer design for 1.55μmIn: 13th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM 2001; Nara, Japan; 14.05.2001 - 18.05.2001 2001, S. 440 - 443Online Volltext: dx.doi.org/
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InP-Based HBT with Graded InGaAlAs Base Layer Grown by LP-MOVPEIn: Proceedings of the European GaAs and other Semiconductor Application Symposium / GAAS AS 2000; Paris, France; 02.10.2000 - 03.10.2000 2000
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Monolithische Integration von Heterostruktur-Bipolartransistoren und Elektroabsorptionsmodulatoren auf InP(2004) 108 S.
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Demonstration von Heterostruktur-Bipolartransistoren und Elektroabsorptionsmodulatoren auf der Basis eines multifunktionalen Schichtdesigns
65. Physikertagung und Frühjahrstagung des Arbeitskreises Festkörperphysik der DPG, Hamburg, Germany,Hamburg (2001) -
Integration of Heterostructure Bipolartransistors with Electroabsorption Waveguide Modulators and Applications
11th European Heterostructure Technology Workshop, Padova, Italien, 28. - 30. Oktober 2001,Padua (2001) -
Heterostructure bipolartransistor combining electroabsorption waveguide modulator based on a multifunctional layer design for 1.55µm
12th IEEE III-V Semiconductor Device Simulation Workshop in combination with the HBT Workshop, Duisburg, Germany, 2000,Duisburg (2000)