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Prof. Dr. Franz-Josef Tegude

Anschrift
Lotharstr. 55 (LT/ZHO)
47057 Duisburg
Raum
LT 207
Telefon
+49 201 183 6845
E-Mail
Franz.Tegude@uni-due.de
Webseite
http://www.hlt.uni-duisburg-essen.de/

Funktionen

  • Universitätsprofessor/in em./i.R., Bauelemente der Höchstfrequenz-Elektronik

Aktuelle Veranstaltungen

Keine aktuellen Veranstaltungen.

Vergangene Veranstaltungen (max. 10)

Keine vergangenen Veranstaltungen.

Die folgenden Publikationen sind in der Online-Universitätsbibliographie der Universität Duisburg-Essen verzeichnet. Weitere Informationen finden Sie gegebenenfalls auch auf den persönlichen Webseiten der Person.

    Artikel in Zeitschriften

  • Liborius, Lisa; Bieniek, Jan; Poßberg, Alexander; Tegude, Franz-Josef; Prost, Werner; Poloczek, Artur; Weimann, Nils
    Tunneling-Related Leakage Currents in Coaxial GaAs/InGaP Nanowire Heterojunction Bipolar Transistors
    In: Physica Status Solidi (B): Basic Solid State Physics , Jg. 258 2021, Nr. 2, S. 2000395
    DOI (Open Access)
  • Blumberg, Christian; Häuser, Patrick; Wefers, Fabian; Jansen, Dennis; Tegude, Franz-Josef; Weimann, Nils; Prost, Werner
    A systematic study of Ga- And N-polar GaN nanowire-shell growth by metal organic vapor phase epitaxy
    In: CrystEngComm , Jg. 22 2020, Nr. 33, S. 5522 – 5532
    DOI
  • Blumberg, Christian; Liborius, Lisa; Ackermann, Julia; Tegude, Franz-Josef; Poloczek, Artur; Prost, Werner; Weimann, Nils
    Spatially controlled VLS epitaxy of gallium arsenide nanowires on gallium nitride layers
    In: CrystEngComm , Jg. 22 2020, Nr. 7, S. 1239 – 1250
    DOI
  • Liborius, Lisa; Bieniek, Jan; Nägelein, Andreas; Tegude, Franz-Josef; Prost, Werner; Hannappel, Thomas; Poloczek, Artur; Weimann, Nils
    n-Doped InGaP Nanowire Shells in GaAs/InGaP Core–Shell p–n Junctions
    In: Physica Status Solidi (B): Basic Solid State Physics , Jg. 257 2020, Nr. 2, S. 1900358
    DOI (Open Access)
  • Blumberg, Christian; Wefers, Fabian; Tegude, Franz-Josef; Weimann, Nils; Prost, Werner
    Mask-less MOVPE of arrayed n-GaN nanowires on site- and polarity-controlled AlN/Si templates
    In: CrystEngComm , Jg. 21 2019, Nr. 48, S. 7476 – 7488
    DOI
  • Speich, Claudia; Dissinger, Frank; Liborius, Lisa; Hagemann, Ulrich; Waldvogel, Siegfried R.; Tegude, Franz-Josef; Prost, Werner
    Process Development for Wet-Chemical Surface Functionalization of Gallium Arsenide Based Nanowires
    In: Physica Status Solidi (B): Basic Solid State Physics 2019, S. 1800678
    DOI
  • Liborius, Lisa; Heyer, Fabian; Arzi, Khaled; Speich, Claudia; Prost, Werner; Tegude, Franz-Josef; Weimann, Nils; Poloczek, Artur
    Toward Nanowire HBT : Reverse Current Reduction in Coaxial GaAs/InGaP n(i)p and n(i)pn Core-Multishell Nanowires
    In: Physica Status Solidi (A) - Applications and Materials Science , Jg. 216 2019, Nr. 1, S. 1800562
    DOI
  • Schmitt, Sebastian W.; Sarau, George; Speich, Claudia; Döhler, Gottfried H.; Liu, Ziheng; Hao, Xiaojing; Rechberger, Stefanie; Dieker, Christel; Spiecker, Erdmann; Prost, Werner; Tegude, Franz-Josef; Conibeer, Gavin; Green, Martin A.; Christiansen, Silke H.
    Germanium Template Assisted Integration of Gallium Arsenide Nanocrystals on Silicon : A Versatile Platform for Modern Optoelectronic Materials
    In: Advanced Optical Materials , Jg. 6 2018, Nr. 8, 1701329
    DOI
  • Blumberg, Christian; Grosse, Simon; Weimann, Nils; Tegude, Franz-Josef; Prost, Werner
    Polarity- and Site-Controlled Metal Organic Vapor Phase Epitaxy of 3D-GaN on Si(111)
    In: Physica Status Solidi (B): Basic Solid State Physics , Jg. 255 2018, Nr. 5, S. 1700485
    DOI
  • Benner, Oliver; Blumberg, Christian; Arzi, Khaled; Poloczek, Artur; Prost, Werner; Tegude, Franz-Josef
    Erratum: Electrical characterization and transport model of n-gallium nitride nanowires
    In: Applied Physics Letters (APL) , Jg. 108 2016, Nr. 4, S. 082103
    DOI
  • Bitzer, Lucas A.; Speich, Claudia; Schäfer, David; Erni, Daniel; Prost, Werner; Tegude, Franz-Josef; Benson, Niels; Schmechel, Roland
    Modelling of electron beam induced nanowire attraction
    In: Journal of Applied Physics , Jg. 119 2016, Nr. 14, S. 145101
    DOI
  • Benner, Oliver; Blumberg, Christian; Arzi, Khaled; Poloczek, Artur; Prost, Werner; Tegude, Franz-Josef
    Electrical characterization and transport model of n-gallium nitride nanowires
    In: Applied Physics Letters (APL) , Jg. 107 2015, Nr. 8, S. 082103
    DOI
  • Koester, Robert; Sager, Daniel; Quitsch, Wolf-Alexander; Pfingsten, Oliver; Poloczek, Artur; Blumenthal, Sarah; Keller, Gregor; Prost, Werner; Bacher, Gerd; Tegude, Franz-Josef
    High-Speed GaN/GaInN Nanowire Array Light-Emitting Diode on Silicon(111)
    In: Nano Letters , Jg. 15 2015, Nr. 4, S. 2318 – 2323
    DOI
  • Benson, Niels; Tegude, Franz-Josef
    Nano und Energie ≠ NanoEnergie : Anwendungen von Nanokonzepten in der Photovoltaik
    In: Unikate: Berichte aus Forschung und Lehre 2013, Nr. 43: NanoEnergie : Materialentwicklung für eine nachhaltige Energieversorgung, S. 76 – 87
    DOI, Online Volltext (Open Access)
  • Ochedowski, Oliver; Marinov, Kolyo; Wilbs, G.; Keller, Gregor; Scheuschner, Nils; Severin, Daniel; Bender, Markus; Maultzsch, Janina; Tegude, Franz-Josef; Schleberger, Marika
    Radiation hardness of graphene and MoS2 field effect devices against swift heavy ion irradiation
    In: Journal of Applied Physics , Jg. 113 2013, Nr. 21, S. 214306
    DOI (Open Access)
  • Sager, Daniel; Gutsche, Christoph; Prost, Werner; Tegude, Franz-Josef; Bacher, Gerd
    Recombination dynamics in single GaAs-nanowires with an axial heterojunction : N- versus p-doped areas
    In: Journal of Applied Physics , Jg. 113 2013, Nr. 17, S. 174303-1 – 174303-5
    DOI
  • Sladek, Kamil; Winden, Andreas; Wirths, Stephan; Weis, Karl; Blömers, Christian; Gül, Önder; Grap, Thomas; Lenk, Steffi; von der Ahe, Martina; Weirich, Thomas E.; Hardtdegen, Hilde; Lepsa, Mihail Ion; Lysov, Andrey; Li, Zi-An; Prost, Werner; Tegude, Franz-Josef; Lüth, Hans; Schäpers, Thomas; Grützmacher, Detlev
    Comparison of InAs nanowire conductivity : Influence of growth method and structure
    In: Physica Status Solidi (C): Current Topics in Solid State Physics , Jg. 9 2012, Nr. 2, S. 230 – 234
    DOI
  • Gutsche, Christoph; Niepelt, Raphael; Gnauck, Martin; Lysov, Andrey; Prost, Werner; Ronning, Carsten; Tegude, Franz-Josef
    Direct determination of minority carrier diffusion lengths at axial GaAs nanowire p-n junctions
    In: Nano Letters , Jg. 12 2012, Nr. 3, S. 1453 – 1458
    DOI
  • Grange, Rachel; Brönstrup, Gerald; Kiometzis, Michael; Sergeyev, Anton; Richter, Jessica; Leiterer, Christian; Fritzsche, Wolfgang; Gutsche, Christoph; Lysov, Andrey; Prost, Werner; Tegude, Franz-Josef; Pertsch, Thomas; Tünnermann, Andreas; Christiansen, Silke
    Far-field imaging for direct visualization of light interferences in GaAs nanowires
    In: Nano Letters , Jg. 12 2012, Nr. 10, S. 5412 – 5417
    DOI
  • Gutsche, Christoph; Lysov, Andrey; Braam, Daniel; Regolin, Ingo; Keller, Gregor; Li, Zi-An; Geller, Martin Paul; Spasova, Marina; Prost, Werner; Tegude, Franz-Josef
    N-GaAs/InGaP/p-GaAs core-multishell nanowire diodes for efficient light-to-current conversion
    In: Advanced Functional Materials , Jg. 22 2012, Nr. 5, S. 929 – 936
    DOI
  • Gutsche, Christof; Lysov, Andrey; Regolin, Ingo; Münstermann, Benjamin; Prost, Werner; Tegude, Franz-Josef
    Scalable electrical properties of axial GaAs nanowire pn-diodes
    In: Journal of Electronic Materials (JEM) , Jg. 41 2012, Nr. 5, S. 809 – 812
    DOI
  • Brönstrup, Gerald; Leiterer, Christian; Jahr, Norbert; Gutsche, Christoph; Lysov, Andrey; Regolin, Ingo; Prost, Werner; Tegude, Franz-Josef; Fritzsche, Wolfgang; Christiansen, Silke H.
    A precise optical determination of nanoscale diameters of semiconductor nanowires
    In: Nanotechnology , Jg. 22 2011, Nr. 38, S. 385201
    DOI
  • Regolin, Ingo; Gutsche, Christoph; Lysov, Andrey; Blekker, Kai; Li, Zi-An; Spasova, Marina; Prost, Werner; Tegude, Franz-Josef
    Axial pn-junctions formed by MOVPE using DEZn and TESn in vaporliquidsolid grown GaAs nanowires
    In: Journal of Crystal Growth , Jg. 315 2011, Nr. 1, S. 143 – 147
    DOI
  • Ahl, Jan Philipp; Behmenburg, Hannes; Giesen, Christoph; Regolin, Ingo; Prost, Werner; Tegude, Franz-Josef; Radnoczi, György Zoltán; Pécz, Béla; Kalisch, Holger; Jansen, Rolf H.; Heuken, Michael
    Gold catalyst initiated growth of GaN nanowires by MOCVD
    In: Physica Status Solidi (C): Current Topics in Solid State Physics , Jg. 8 2011, Nr. 7-8, S. 2315 – 2317
    DOI
  • Topaloglu, Serkan; Prost, Werner; Tegude, Franz-Josef
    ICP-RIE etching of self-aligned InP based HBTs with Cl₂/N ₂ chemistry
    In: Microelectronic Engineering , Jg. 88 2011, Nr. 7, S. 1601 – 1605
    DOI
  • Gutsche, Christoph; Lysov, Andrey; Regolin, Ingo; Brodt, A.; Liborius, Lisa; Frohleiks, Julia; Prost, Werner; Tegude, Franz-Josef
    Ohmic contacts to n-GaAs nanowires
    In: Journal of Applied Physics , Jg. 110 2011, Nr. 1, S. 014305
    DOI
  • Lysov, Andrey; Offer, Matthias; Gutsche, Christoph; Regolin, Ingo; Topaloglu, Serkan; Geller, Martin Paul; Prost, Werner; Tegude, Franz-Josef
    Optical properties of heavily doped GaAs nanowires and electroluminescent nanowire structures
    In: Nanotechnology , Jg. 22 2011, Nr. 8, S. 085702
    DOI
  • Li, Zi-An; Möller, Christina; Migunov, Vadim; Spasova, Marina; Farle, Michael; Lysov, Andrey; Gutsche, Christoph; Regolin, Ingo; Prost, Werner; Tegude, Franz-Josef; Ercius, Peter
    Planar-defect characteristics and cross-sections of 〈001〉, 〈111〉, and 〈112〉 InAs nanowires
    In: Journal of Applied Physics , Jg. 109 2011, Nr. 11, S. 114320
    DOI (Open Access)
  • Lysov, Andrey; Vinaji, Sasa; Offer, Matthias; Gutsche, Christoph; Regolin, Ingo; Mertin, Wolfgang; Geller, Martin Paul; Prost, Werner; Bacher, Gerd; Tegude, Franz-Josef
    Spatially resolved photoelectric performance of axial GaAs nanowire pn-diodes
    In: Nano Research , Jg. 4 2011, Nr. 10, S. 987 – 995
    DOI
  • Gutsche, Christoph; Lysov, Andrey; Regolin, Ingo; Blekker, Kai; Prost, Werner; Tegude, Franz-Josef
    n-Type doping of vapor–liquid–solid grown GaAs nanowires
    In: Nanoscale Research Letters , Jg. 6 2011, Nr. 1, S. 65
    DOI (Open Access)
  • Blekker, Kai; Münstermann, Benjamin; Matiss, Andreas; Do, Quoc-Thai; Regolin, Ingo; Brockerhoff, Wolfgang; Prost, Werner; Tegude, Franz-Josef
    High-Frequency Measurements on InAs Nanowire Field-Effect Transistors using Coplanar Waveguide Contacts
    In: IEEE Transactions on Nanotechnology , Jg. 9 2010, Nr. 4, S. 432 – 437
    DOI, Online Volltext
  • Prost, Werner; Zhang, Dudu; Münstermann, Benjamin; Feldengut, Tobias; Geitmann, Ralf; Poloczek, Artur; Tegude, Franz-Josef
    InP-Based Unipolar Heterostructure Diode for Vertical Integration, Level Shifting, and Small Signal Rectification
    In: IEICE Transactions C: IEICE Transactions on Electronics , Jg. E93-C 2010, Nr. 8, S. 1309 – 1314
    DOI
  • Borschel, Christian; Niepelt, Raphael; Geburt, Sebastian; Gutsche, Christoph; Regolin, Ingo; Prost, Werner; Tegude, Franz-Josef; Stichtenoth, Daniel; Schwen, Daniel; Ronning, Carsten
    Alignment of semiconductor nanowires using ion beams
    In: Small , Jg. 5 2009, Nr. 22, S. 2576 – 2580
    DOI
  • Gutsche, Christoph; Regolin, Ingo; Blekker, Kai; Lysov, Andrey; Prost, Werner; Tegude, Franz-Josef
    Controllable p -type doping of GaAs nanowires during vapor-liquid-solid growth
    In: Journal of Applied Physics , Jg. 105 2009, Nr. 2, S. 024305
    DOI
  • Vinaji, Sasa; Lochthofen, André; Mertin, Wolfgang; Regolin, Ingo; Gutsche, Christoph; Prost, Werner; Tegude, Franz-Josef; Bacher, Gerd
    Material and doping transitions in single GaAs-based nanowires probed by Kelvin probe force microscopy
    In: Nanotechnology , Jg. 20 2009, Nr. 38, S. 385702
    DOI
  • Stichtenoth, Daniel; Wegener, Katharina; Gutsche, Christoph; Regolin, Ingo; Tegude, Franz-Josef; Prost, Werner; Seibt, Michael; Ronning, Carsten
    P -type doping of GaAs nanowires
    In: Applied Physics Letters (APL) , Jg. 92 2008, Nr. 16, S. 163107
    DOI
  • Jin, Zhi; Liu, Xinyu; Prost, Werner; Tegude, Franz-Josef
    Surface-recombination-free InGaAs/InP HBTs and the base contact recombination
    In: Solid State Electronics , Jg. 52 2008, Nr. 7, S. 1088 – 1091
    DOI
  • Regolin, Ingo; Khorenko, Victor; Prost, Werner; Tegude, Franz-Josef; Sudfeld, Daniela; Kästner, Jochen; Dumpich, Günter; Hitzbleck, Klemens; Wiggers, Hartmut
    GaAs whiskers grown by metal-organic vapor-phase epitaxy using Fe nanoparticles
    In: Journal of Applied Physics , Jg. 101 2007, Nr. 5, S. 054318
    DOI
  • Regolin, Ingo; Sudfeld, Daniela; Lüttjohann, Stephan; Khorenko, Victor; Prost, Werner; Kästner, Jochen; Dumpich, Guenter; Meier, Cedrik; Lorke, Axel; Tegude, Franz-Josef
    Growth and characterisation of GaAs/InGaAs/GaAs nanowhiskers on (1 1 1) GaAs
    In: Journal of Crystal Growth , Jg. 298 2007, S. 607 – 611
    DOI
  • Prost, Werner; Khorenko, Victor; Mofor, Augustine Che; Neumann, Stefan; Poloczek, Artur; Matiss, Andreas; Bakin, Andrey; Schlachetzki, Andreas; Tegude, Franz-Josef
    High performance III/V RTD and PIN diode on a silicon (001) substrate
    In: Applied Physics A: Materials Science and Processing , Jg. 87 2007, Nr. 3, S. 539 – 544
    DOI
  • Do, Quoc Thai; Blekker, Kai; Regolin, Ingo; Prost, Werner; Tegude, Franz-Josef
    High transconductance MISFET with a single InAs nanowire channel
    In: IEEE Electron Device Letters , Jg. 28 2007, Nr. 8, S. 682 – 684
    DOI, Online Volltext
  • Alkeev, Nikolay V.; Averin, Stanislav V.; Dorofeev, Aleksey A.; Velling, Peter; Khorenko, E.; Prost, Werner; Tegude, Franz-Josef
    Sequential mechanism of electron transport in the resonant tunneling diode with thick barriers
    In: Semiconductors , Jg. 41 2007, Nr. 2, S. 227 – 231
    DOI
  • Krämer, Stefan; Neumann, Stefan; Prost, Werner; Tegude, Franz-Josef; Malzer, Stefan; Döhler, Gottfried H.
    A monolithically integrated intensity-independent polarization-sensitive switch operating at 1.3 μm based on ordering in InGaAsP
    In: Physica E: Low-Dimensional Systems and Nanostructures , Jg. 32 2006, Nr. 1-2, S. 554 – 557
    DOI
  • Regolin, Ingo; Khorenko, Victor; Prost, Werner; Tegude, Franz-Josef; Sudfeld, Daniela; Kästner, Jochen; Dumpich, Günter
    Composition Control in MOVPE-Grown InGaAs Nanowhiskers.
    In: Journal of Applied Physics , Jg. 298 2006, S. 607 – 611
  • Regolin, Ingo; Khorenko, Victor; Prost, Werner; Tegude, Franz-Josef; Sudfeld, Daniela; Kästner, Jochen; Dumpich, Guenter
    Composition control in metal-organic vapor-phase epitaxy grown InGaAs nanowhiskers
    In: Journal of Applied Physics , Jg. 100 2006, Nr. 7, S. 074321
    DOI
  • Kollonitsch, Z.; Schimper, Hermann Josef; Seidel, Ulf; Möller, Kristof; Neumann, Stefan; Tegude, Franz-Josef; Willig, Frank; Hannappel, Thomas
    Improved structure and performance of the GaAsSb/InP interface in a resonant tunneling diode
    In: Journal of Crystal Growth , Jg. 287 2006, Nr. 2, S. 536 – 540
    DOI
  • Matiss, Andreas; Prost, Werner; Tegude, Franz-Josef
    Optoelectronic 1:2 demultiplexing based on resonant tunnelling diodes and pin-photodetectors
    In: Electronics Letters , Jg. 42 2006, Nr. 10, S. 599 – 600
    DOI
  • Jin, Zhi; Uchida, Kazuo; Nozaki, Shinji; Prost, Werner; Tegude, Franz-Josef
    Passivation of InP-based HBTs
    In: Applied Surface Science , Jg. 252 2006, Nr. 21, S. 7664 – 7670
    DOI
  • Sudfeld, Daniela; Regolin, Ingo; Kästner, Jochen; Dumpich, Guenter; Khorenko, Victor; Prost, Werner; Tegude, Franz-Josef
    Single InGaAs nanowhiskers characterized by analytical transmission electron microscopy
    In: Phase Transitions , Jg. 79 2006, Nr. 9-10, S. 727 – 737
    DOI
  • Topaloǧlu, Serkan; Driesen, Jörn; Prost, Werner; Tegude, Franz-Josef
    The effect of collector doping on InP-based double heterojunction bipolar transistors
    4th International Conference on Electrical and Electronics Engineering (ELECO), Bursa, Turkey, 07.12.2005 - 11.12.2005,
    In: Turkish Journal of Electrical Engineering & Computer Sciences , Jg. 14 2006, Nr. 3, S. 429 – 436
    (Open Access)
  • Müller, Thorsten; Lorke, Axel; Do, Quoc Thai; Tegude, Franz-Josef; Schuh, Dieter; Wegscheider, Werner
    A three-terminal planar selfgating device for nanoelectronic applications
    In: Solid State Electronics , Jg. 49 2005, Nr. 12, S. 1990 – 1995
    DOI
  • Jin, Zhi; Neumann, Stefan; Prost, Werner; Tegude, Franz-Josef
    Passivation of InP/GaAsSb/InP double heterostructure bipolar transistors with ultra thin base layer by low-temperature deposited SiNₓ
    In: Solid State Electronics , Jg. 49 2005, Nr. 3, S. 409 – 412
    DOI
  • Krämer, Stefan; Neumann, Stefan; Prost, Werner; Tegude, Franz-Josef; Malzer, Stefan; Döhler, Gottfried H.
    Polarisation-sensitive switch : An integrated intensity-independent solution for 1.3 μm based on the polarisation anisotropy of ordered InGaAsP
    In: Physica Status Solidi (A): Applications and Materials Science , Jg. 202 2005, Nr. 6, S. 992 – 996
    DOI
  • Jin, Zhi; Prost, Werner; Neumann, Stefan; Tegude, Franz-Josef
    Comparison of the passivation effects on self- and non-self-aligned InP/InGaAs/InP double heterostructure bipolar transistors by low-temperature deposited SiNₓ
    In: Journal of Applied Physics , Jg. 96 2004, Nr. 1, S. 777 – 783
    DOI
  • Jin, Zhi; Otten, Frank; Reimann, Thorsten; Neumann, Stefan; Prost, Werner; Tegude, Franz-Josef
    Current gain increase by SiNₓ passivation in self-aligned InGaAs/InP heterostructure bipolar transistor with compositionally graded base
    In: Solid State Electronics , Jg. 48 2004, Nr. 9, S. 1637 – 1641
    DOI
  • Jin, Zhi; Prost, Werner; Neumann, Stefan; Tegude, Franz-Josef
    Current transport mechanisms and their effects on the performances of InP-based double heterojunction bipolar transistors with different base structures
    In: Applied Physics Letters (APL) , Jg. 84 2004, Nr. 15, S. 2910 – 2912
    DOI
  • Prost, Werner; Tegude, Franz-Josef
    Disziplin im Nano-Maßstab : Selbstorganisation in Bottom-up-Prozessen
    In: Forum Forschung: Das Forschungsmagazin der Universität Duisburg-Essen 2004, Nr. 2003/2004, S. 88 – 92
  • Jin, Zhi; Neumann, Stefan; Prost, Werner; Tegude, Franz-Josef
    Effects of (NH4)(2)S passivation on the performance of graded-base InGaAs/InP HBTs
    In: Physica status solidi A - Applied research , Jg. 201 2004, Nr. 5, S. 1017 – 1021
  • Jin, Zhi; Neumann, Stefan; Prost, Werner; Tegude, Franz-Josef
    Effects of (NH₄)₂S passivation on the performance of graded-base InGaAs/InP HBTs
    In: Physica Status Solidi (A): Applications and Materials Science , Jg. 201 2004, Nr. 5, S. 1017 – 1021
    DOI
  • Alkeev, Nikolay V.; Lyubchenko, Vladimir E.; Velling, Peter; Khorenko, E.; Prost, Werner; Tegude, Franz-Josef
    Equivalent circuit of a resonant tunnel InGaAs/InAlAs diode operating at millimetric waves
    In: Journal of Communications Technology and Electronics , Jg. 49 2004, Nr. 7, S. 833 – 838
  • Neumann, Stefan; Velling, Peter; Prost, Werner; Tegude, Franz-Josef
    Growth and characterization of InAlP/InGaAs double barrier RTDs
    12th International Conference on Metalorganic Vapour Phase Epitaxy (MOVPE), Lahaina, Hawaii, USA, 30.05.2004 - 04.06.2004,
    In: Journal of Crystal Growth , Jg. 272 2004, Nr. 1-4, S. 555 – 558
    DOI
  • Khorenko, E.; Prost, Werner; Tegude, Franz-Josef; Stoffel, Mathieu; Duschl, R.; Dashiell, Michael W.; Schmidt, O.G.
    Influence of layer structure on the current-voltage characteristics of Si/SiGe interband tunneling diodes
    In: Journal of Applied Physics , Jg. 96 2004, Nr. 7, S. 3848 – 3851
    DOI
  • Khorenko, Victor; Regolin, Ingo; Neumann, Stefan; Prost, Werner; Tegude, Franz-Josef; Wiggers, Hartmut
    Photoluminescence of GaAs nanowhiskers grown on Si substrate
    In: Applied Physics Letters (APL) , Jg. 85 2004, Nr. 26, S. 6407 – 6408
    DOI
  • Jin, Zhi; Prost, Werner; Neumann, Stefan; Tegude, Franz-Josef
    Sulfur and low-temperature SiNₓ passivation of self-aligned graded-base InGaAs/InP heterostructure bipolar transistors
    In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures , Jg. 22 2004, Nr. 3, S. 1060 – 1066
    DOI (Open Access)
  • Jin, Zhi; Neumann, Stefan; Prost, Werner; Tegude, Franz-Josef
    Surface recombination mechanism in graded-base InGaAs-InP HBTs
    In: IEEE Transactions on Electron Devices (T-ED) , Jg. 51 2004, Nr. 6, S. 1044 – 1045
    DOI, Online Volltext
  • Glösekötter, Peter; Pacha, Christian; Goser, Karl F.; Prost, Werner; Kim, Samuel O.; van Husen, Holger; Reimann, Thorsten; Tegude, Franz-Josef
    Circuit and application aspects of tunnelling devices in a MOBILE configuration
    In: International Journal of Circuit Theory and Applications , Jg. 31 2003, Nr. 1, S. 83 – 103
    DOI
  • Neumann, Stefan; Bakin, Andrey; Velling, Peter; Prost, Werner; Wehmann, Hergo Heinrich; Schlachetzki, Andreas; Tegude, Franz-Josef
    Growth of III/V resonant tunnelling diode on Si substrate with LP-MOVPE
    Eleventh International Conference on MOVPE XI; Berlin, Germany; 3 - 7 June 2002,
    In: Journal of Crystal Growth , Jg. 248 2003, S. 380 – 383
    DOI
  • Neumann, Stefan; Prost, Werner; Tegude, Franz-Josef
    Growth of carbon-doped LP-MOVPE InAlAs using non-gaseous sources
    In: Journal of Crystal Growth , Jg. 248 2003, S. 130 – 133
    DOI
  • Neumann, Stefan; Spieler, Jochen; Blache, R.; Kiesel, Peter; Prost, Werner; Döhler, Gottfried H.; Tegude, Franz-Josef
    MOVPE growth and polarisation dependence of (dis-)ordered InGaAsP PIN diodes for optical fibre applications
    Eleventh International Conference on MOVPE XI; Berlin, Germany; 3 - 7 June 2002,
    In: Journal of Crystal Growth , Jg. 248 2003, S. 158 – 162
    DOI
  • Schlothmann, Bernd Josef; Bertenburg, Ralf M.; Agethen, Michael; Velling, Peter; Brockerhoff, Wolfgang; Tegude, Franz-Josef
    Two-dimensional physical simulation of InGaAs/InP heterostructure bipolar transistors
    6th International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, EXMATEC 2002; Budapest; Hungary; 26 - 29 May 2002,
    In: Physica Status Solidi (C): Current Topics in Solid State Physics 2003, Nr. 3, S. 922 – 927
    DOI
  • Saǧlam, M.; Schumann, Bert; Müllerwiebus, Viki; Megej, Alexander; Auer, Uwe; Rodriguez-Gironés, Manuel; Judaschke, Rolf H.; Tegude, Franz-Josef; Hartnagel, Hans Ludwig
    450 GHz millimetre-wave signal from frequency tripler with heterostructure barrier varactors on gold substrate
    In: Electronics Letters , Jg. 38 2002, Nr. 13, S. 657 – 658
    DOI
  • Otten, Frank; Auer, Uwe; Kruis, Frank Einar; Prost, Werner; Tegude, Franz-Josef; Fissan, Heinz
    Lithographic Tools for Producing Patterned Films Compsed of Gas Phase Generated Nanocrystals Impress
    In: Material Science and Technology , Jg. 18 2002, Nr. 7, S. 717 – 720
    DOI
  • Auer, Uwe; Prost, Werner; Agethen, Michael; Tegude, Franz-Josef; Duschl, R.; Eberl, Karl
    Low-voltage MOBILE logic module based on Si/SiGe interband tunnelling diodes
    In: IEEE Electron Device Letters , Jg. 22 2001, Nr. 5, S. 215 – 217
    DOI, Online Volltext
  • Mihaila, Mihai N.; Scheffer, Frank; Heedt, Christian; Tegude, Franz-Josef
    Nonlinear Effects in the 1/f Noise of a 2D Electron Gas
    9th IFAC Symposium on Large Scale Systems: Theory and Applications 2001, Bucharest, Romania, 18-20 July 2001,
    In: IFAC Proceedings Volumes , Jg. 34 2001, Nr. 8, S. 319 – 324
    DOI
  • Mihaila, M.; Heedt, C.; Tegude, Franz-Josef
    On the Microscopic Origin of 1/f Noise in Lattice-Matched InAlAs/InGaAs HEMT's
    In: Proceedings of the Romanian Academy Series A: Mathematics Physics Technical Sciences Information Science 2001
  • Spieler, Jochen; Kippenberg, Thomas; Krauß, J.; Kiesel, Peter; Döhler, Gottfried H.; Velling, Peter; Prost, Werner; Tegude, Franz-Josef
    Electro-optical examination of the band structure of ordered InGaAs
    In: Applied Physics Letters (APL) , Jg. 76 2000, Nr. 1, S. 88 – 90
    DOI
  • Berntgen, Jürgen; Behres, Alexander; Kluth, Jürgen; Heime, Klaus; Daumann, Walter; Auer, Uwe; Tegude, Franz-Josef
    Hooge parameter of InGaAs bulk material and InGaAs 2DEG quantum well structures based on InP substrates
    15th Int. Conf. on Noise in Physical Systems and 1/f Fluctuations, Hongkong, 23.08.1999 - 26.08.1999,
    In: Microelectronics Reliability , Jg. 40 2000, Nr. 11, S. 1911 – 1914
    DOI
  • Velling, Peter; Agethen, Michael; Prost, Werner; Tegude, Franz-Josef
    InAlAs/InGaAs/InP heterostructures for RTD and HBT device applications grown by LP-MOVPE using non-gaseous sources
    In: Journal of Crystal Growth , Jg. 221 2000, Nr. 1-4, S. 722 – 729
    DOI
  • Prost, Werner; Auer, Uwe; Tegude, Franz-Josef; Pacha, Christian; Goser, Karl F.; Janßen, Guido; van der Roer, T.
    Manufacturability and robust design of nanoelectronic logic circuits based on resonant tunnelling diodes
    In: International Journal of Circuit Theory and Applications , Jg. 28 2000, Nr. 6, S. 537 – 552
    DOI
  • Keiper, Dietmar; Velling, Peter; Prost, Werner; Agethen, Michael; Tegude, Franz-Josef; Landgren, Gunnar
    Metalorganic vapour phase epitaxy growth of InP-based heterojunction bipolar transistors with carbon doped InGaAs base using tertiarybutylarsine and tertiarybutylphosphine in N₂ ambient
    In: Japanese Journal of Applied Physics , Jg. 39 2000, Nr. 11, S. 6162 – 6165
    DOI
  • Pacha, Christian; Kessler, Oliver; Glösekötter, Peter; Goser, Karl F.; Prost, Werner; Brennemann, Andreas; Auer, Uwe; Tegude, Franz-Josef
    Parallel adder design with reduced circuit complexity using resonant tunneling transistors and threshold logic
    In: Analog Integrated Circuits and Signal Processing , Jg. 24 2000, Nr. 1, S. 7 – 25
    DOI
  • Pacha, Christian; Auer, Uwe; Burwick, Christian; Glösekötter, Peter; Brennemann, Andreas; Prost, Werner; Tegude, Franz-Josef; Goser, Karl F.
    Threshold logic circuit design of parallel adders using resonant tunneling devices
    11th International Symposium on System-Level Synthesis and Design (ISS'98); Hsinchu, Taiwan; 2 - 4 December 1998,
    In: IEEE Transactions on Very Large Scale Integration (VLSI) Systems , Jg. 8 2000, Nr. 5, S. 558 – 572
    DOI, Online Volltext
  • Hilburger, Ulrich; Fix, Walter; Mayer, R.; Geißelbrecht, Wolfgang; Malzer, Stefan; Velling, Peter; Prost, Werner; Tegude, Franz-Josef; Döhler, Gottfried H.
    Extension of the epitaxial shadow mask MBE technique for the monolithic integration and in situ fabrication of novel device structures
    In: Journal of Crystal Growth , Jg. 201-202 1999, S. 574 – 577
    DOI
  • Kopperschmidt, P.; Senz, S T.; Scholz, R.; Kästner, G.; Gösele, U.; Velling, Peter; Prost, Werner; Tegude, Franz-Josef; Gottschalch, V.; Wada, K.
    Strain Relaxation During Heteroepitaxy on Twist-Bonded Thin Gallium Arsenide Substrates
    In: MRS (Materials Research Society) Proceedings , Jg. 535: III-V and IV-IV Materials and Processing Challenges for Highly Integrated Microelectronics and Optoelectronics 1999, S. 45
    DOI
  • Berntgen, Jürgen; Heime, Klaus; Daumann, Walter; Auer, Uwe; Tegude, Franz-Josef; Matulionis, Arvydas
    The 1/f noise of InP based 2DEG devices and its dependence on mobility
    In: IEEE Transactions on Electron Devices (T-ED) , Jg. 46 1999, Nr. 1, S. 194 – 203
    DOI, Online Volltext
  • Auer, Uwe; Kim, Samuel O.; Agethen, Michael; Veiling, P.; Prost, Werner; Tegude, Franz-Josef
    Fast fabrication of InP-based HBT using a novel coplanar design
    In: Electronics Letters , Jg. 34 1998, Nr. 19, S. 1885 – 1886
    DOI (Open Access)
  • Haase, M.; Prost, Werner; Veiling, P.; Liu, Q.; Tegude, Franz-Josef
    HR XRD for the analysis of ultrathin centrosymmetric strained DB-RTD heterostructures
    In: Thin Solid Films , Jg. 319 1998, Nr. 1-2, S. 25 – 28
    DOI
  • Velling, Peter; Janßen, Guido; Agethen, Michael; Prost, Werner; Tegude, Franz-Josef
    InGaP/GaAs hole barrier asymmetry determined by (0 0 2) X-ray reflections and p-type DB-RTD hole transport
    In: Journal of Crystal Growth , Jg. 195 1998, Nr. 1-4, S. 117 – 123
    DOI
  • Velling, Peter; Fix, Walter; Geißelbrecht, Wolfgang; Prost, Werner; Döhler, Gottfried H.; Tegude, Franz-Josef
    InGaP/GaAs shadow-mask for optoelectronic integration and MBE regrowth
    In: Journal of Crystal Growth , Jg. 195 1998, Nr. 1-4, S. 490 – 494
    DOI
  • Prost, Werner; Kruis, Frank Einar; Otten, Frank; Nielsch, Kornelius; Rellinghaus, Bernd; Auer, Uwe; Peled, Aaron Z.; Wassermann, Eberhard; Fissan, Heinz; Tegude, Franz-Josef
    Monodisperse aerosol particle deposition : Prospects for nanoelectronics
    In: Microelectronic Engineering , Jg. 41-42 1998, S. 535 – 538
    DOI
  • Veiling, P.; Janßen, Guido; Auer, Uwe; Prost, Werner; Tegude, Franz-Josef
    NAND/NOR logic circuit using single InP-based RTBT
    In: Electronics Letters , Jg. 34 1998, Nr. 25, S. 2390 – 2392
    DOI
  • van Waasen, Stefan; Umbach, Andreas; Auer, Uwe; Bach, Heinz-Gunter; Bertenburg, Ralf M.; Janßen, Guido; Mekonnen, Gebre Giorgis; Passenberg, Wolfgang; Reuter, Ralf; Schlaak, Wolfgang; Schramm, Carsten; Unterbörsch, Günter; Wolfram, Peter; Tegude, Franz-Josef
    27-GHz bandwidth high-speed monolithic integrated optoelectronic photoreceiver consisting of a waveguide fed photodiode and an InAlAs/InGaAs-HFET traveling wave amplifier
    In: IEEE Journal of Solid-State Circuits , Jg. 32 1997, Nr. 9, S. 1394 – 1399
    DOI, Online Volltext
  • Lakner, Hubert; Mendorf, C.; Bollig, Bernd; Prost, Werner; Tegude, Franz-Josef
    Determination of interface composition in III-V heterojunction devices (HBT and RTD) with atomic resolution using STEM techniques
    3rd International Workshop on Expert Evaluation & Control of Compound Semicond. Mat. & Technologies (EXMATEC), Freiburg, Germany, 12.05.1996 - 15.05.1996,
    In: Materials Science and Engineering B , Jg. 44 1997, Nr. 1-3, S. 52 – 56
    DOI
  • Liu, Q.; Prost, Werner; Tegude, Franz-Josef
    Investigation of growth temperature dependent GaInP ordering in different crystal planes using X-ray diffraction and photoluminescence
    3rd International Workshop on Expert Evaluation & Control of Compound Semicond. Mat. & Technologies (EXMATEC), Freiburg, Germany, 12.05.1996 - 15.05.1996,
    In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology , Jg. 44 1997, Nr. 1-3, S. 91 – 95
    DOI
  • Liu, Q.; Prost, Werner; Brennemann, Andreas; Auer, Uwe; Tegude, Franz-Josef
    Modelling imperfections of epitaxial heterostructures by means of X-ray diffraction analysis
    3rd European Symposium on X-Ray Topography and High Resolution Diffraction (X-TOP), 22.04.1996 - 24.04.1996, Parma, Italy,
    In: Il Nuovo Cimento della Società Italiana di Fisica D , Jg. 19 1997, Nr. 2-4, S. 299 – 304
    DOI
  • Brennemann, Andreas; Prost, Werner; Liu, Q.; Auer, Uwe; Tegude, Franz-Josef
    Modelling intermixing of short period strained layer superlattices by means of X-ray diffraction analysis
    3rd International Workshop on Expert Evaluation & Control of Compound Semicond. Mat. & Technologies (EXMATEC), Freiburg, Germany, 12.05.1996 - 15.05.1996,
    In: Materials Science and Engineering B , Jg. 44 1997, Nr. 1-3, S. 87 – 90
    DOI
  • Lindner, A.; Velling, Peter; Prost, Werner; Wiersch, A.; Kuphal, Eckart; Burchard, A.; Magerle, Robert; Deicher, Manfred; Tegude, Franz-Josef
    The role of hydrogen in low-temperature MOVPE growth and carbon doping of In₀.₅₃Ga₀.₄₇As for InP-based HBT
    8th International Conference on Metalorganic Vapour Phase Epitaxy (MOVPE) (IC MOVPE), Cardiff, U.K., 09.06.1996 - 13.06.1996,
    In: Journal of Crystal Growth , Jg. 170 1997, Nr. 1-4, S. 287 – 291
    DOI
  • Auer, Uwe; Prost, Werner; Janßen, Guido; Agethen, Michael; Reuter, Ralf; Tegude, Franz-Josef
    A novel 3-D integrated HFET/RTD frequency multiplier
    In: IEEE Journal of Selected Topics in Quantum Electronics (J-STQE) , Jg. 2 1996, Nr. 3, S. 650 – 653
    DOI, Online Volltext
  • Liu, Q.; Brennemann, Andreas; Hardtdegen, H.; Lindner, A.; Prost, Werner; Tegude, Franz-Josef
    Characterization of hydrogen passivation and carbon self-compensation of highly C-doped GaAs by means of x-ray diffraction
    In: Journal of Applied Physics , Jg. 79 1996, Nr. 2, S. 710 – 716
    DOI
  • Liu, Q.; Derksen, S.; Prost, Werner; Lindner, A.; Tegude, Franz-Josef
    Growth temperature dependent band alignment at the Ga₀.₅₁In₀.₄₉P to GaAs heterointerfaces
    In: Journal of Applied Physics , Jg. 79 1996, Nr. 1, S. 305 – 309
    DOI
  • Daumann, Walter; Ellrodt, P.; Brockerhoff, Wolfgang; Bertenburg, Ralf M.; Reuter, Ralf; Auer, Uwe; Molls, Wolfgang; Tegude, Franz-Josef
    InAlAs/InGaAs/InP HFET with suppressed impact ionization using dual-gate cascode-devices
    In: IEEE Electron Device Letters , Jg. 17 1996, Nr. 10, S. 488 – 490
    DOI, Online Volltext
  • Umbach, Andreas; van Waasen, Stefan; Auer, Uwe; Bach, Heintz Gunter; Bertenburg, Ralf M.; Breuer, V.; Ebert, Wilhelm; Janßen, Guido; Mekonnen, Gebre Giorgis; Passenberg, Wolfgang; Schlaak, Wolfgang; Schramm, Carsten; Seeger, Angela; Tegude, Franz-Josef; Unterbörsch, Günter
    Monolithic pin-HEMT 1.55μm photoreceiver on InP with 27GHz bandwidth
    In: Electronics Letters , Jg. 32 1996, Nr. 23, S. 2142 – 2143
    DOI
  • Auer, Uwe; Reuter, Ralf; Ellrodt, P.; Heedt, Christian H.; Prost, Werner; Tegude, Franz-Josef
    The impact of pseudomorphic AlAs spacer layers on the gate leakage current of InAlAs/InGaAs heterostructure field-effect transistors
    In: Microwave and Optical Technology Letters , Jg. 11 1996, Nr. 3, S. 125 – 128
    DOI
  • Reuter, Ralf; van Waasen, Stefan; Tegude, Franz-Josef
    A New Noise Model of HFET with Special Emphasis on Gate-Leakage
    In: IEEE Electron Device Letters , Jg. 16 1995, Nr. 2, S. 74 – 76
    DOI, Online Volltext
  • Liu, Q.; Prost, Werner; Tegude, Franz-Josef
    Determination of CuPt-type ordering in GaInP by means of x-ray diffraction in the skew, symmetric arrangement
    In: Applied Physics Letters (APL) , Jg. 67 1995, S. 2807
    DOI
  • David, Gerhard; Bussek, Peter; Auer, Uwe; Tegude, Franz-Josef; Jäger, Dieter
    Electro-optic probing of RF signals in submicrometre MMIC devices
    In: Electronics Letters , Jg. 31 1995, Nr. 25, S. 2188 – 2189
    DOI
  • Liu, Q.; Derksen, S.; Lindner, A.; Scheffer, F.; Prost, Werner; Tegude, Franz-Josef
    Evidence of type-II band alignment at the ordered GaInP to GaAs heterointerface
    In: Journal of Applied Physics , Jg. 77 1995, Nr. 3, S. 1154 – 1158
    DOI
  • Auer, Uwe; Reuter, Ralf; Heedt, Christian H.; Prost, Werner; Tegude, Franz-Josef
    InP-based heterostructure field-effect transistors with high-quality short-period (InAs)₃m/(GaAs)₁m superlattice channel layers
    8th Int. Conf. on Molecular Beam Epitaxy (MBE) (IC MBE), Osaka, Japan, 29.08.1994 - 02.09.1994,
    In: Journal of Crystal Growth , Jg. 150 1995, S. 1225 – 1229
    DOI
  • Ellrodt, P; Brockerhoff, Wolfgang; Tegude, Franz-Josef
    Investigation of leakage current behaviour of Schottky gates on InAlAs/InGaAs/InP HFET structures by a 1D model
    In: Solid State Electronics , Jg. 38 1995, Nr. 10, S. 1775 – 1780
    DOI
  • Prost, Werner; Scheffer, F.; Liu, Q.; Lindner, A.; Lakner, Hubert; Gyuro, I.; Tegude, Franz-Josef
    Metalorganic vapor phase epitaxial grown heterointerfaces to GaInP with group-III and group-V exchange
    In: Journal of Crystal Growth , Jg. 146 1995, Nr. 1-4, S. 538 – 543
    DOI
  • Wiersch, A.; Heedt, Christian H.; Schneiders, S.; Tilders, R.; Buchali, F.; Kuebart, Wolfgang; Prost, Werner; Tegude, Franz-Josef
    Room-temperature deposition of SiNx using ECR-PECVD for III/V semiconductor microelectronics in lift-off technique
    In: Journal of Non-Crystalline Solids , Jg. 187 1995, S. 334 – 339
    DOI
  • Fritzsche, Dieter; Nickel, Heinrich; Lösch, Rainer; Schlapp, Winfried; Tegude, Franz-Josef
    Drastic Reduction of Gate Leakage in InAlAs/InGaAs HEMT’s Using a Pseudomorphic InAlAs Hole Barrier Layer
    In: IEEE Transactions on Electron Devices (T-ED) , Jg. 41 1994, Nr. 10, S. 1685 – 1690
    DOI, Online Volltext
  • Scheffer, F.; Heedt, Christian H.; Reuter, Ralf; Lindner, A.; Liu, Q.; Prost, Werner; Tegude, Franz-Josef
    High breakdown voltage InGaAs/lnAIAs HFET using ln₀.₅Ga₀.₅P spacer layer
    In: Electronics Letters , Jg. 30 1994, Nr. 2, S. 169 – 170
    DOI
  • Scheffer, F.; Lindner, A.; Liu, Q.; Heedt, Christian H.; Reuter, Ralf; Prost, Werner; Lakner, Hubert; Tegude, Franz-Josef
    Highly strained In₀.₅Ga₀.₅P as wide-gap material on InP substrate for heterojunction field effect transistor application
    In: Journal of Crystal Growth , Jg. 145 1994, Nr. 1-4, S. 326 – 331
    DOI
  • Lindner, A.; Liu, Q.; Scheffer, F.; Haase, M.; Prost, Werner; Tegude, Franz-Josef
    Low-pressure metalorganic vapour phase epitaxy growth of InAs/GaAs short period superlattices on InP substrates
    7th Int. Conf. on Metalorganic Vapour Phase Epitaxy (MOVPE) (IC MOVPE), Yokohama, Japan, 31.05.1994 - 03.06.1994,
    In: Journal of Crystal Growth , Jg. 145 1994, Nr. 1-4, S. 771 – 777
    DOI
  • Liu, Q.; Scheffer, F.; Lindner, A.; Lakner, Hubert; Prost, Werner; Tegude, Franz-Josef
    X-ray characterization of very thin GaₓIn₁₋ₓP (x ≈ 0.5) layers grown on InP
    Int. Workshop on Expert Evaluation & Control of Compound Semicond. Mat. & Technologies (EXMATEC), Parma, Italy, 18.05.1994 - 20.05.1994,
    In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology , Jg. 28 1994, Nr. 1-3, S. 188 – 192
    DOI
  • Liu, Q.; Lindner, A.; Scheffer, F.; Prost, Werner; Tegude, Franz-Josef
    X-ray diffraction characterization of highly strained InAs and GaAs layers on InP grown by metalorganic vapor-phase epitaxy
    In: Journal of Applied Physics , Jg. 75 1994, Nr. 5, S. 2426 – 2433
    DOI (Open Access)
  • Liu, Q.; Quedeweit, U.; Scheffer, F.; Lindner, A.; Prost, Werner; Tegude, Franz-Josef
    Effects of deep levels and Si-doping on GaInP material properties investigated by means of optical methods
    European Materials Research Conference (E-MRS), Strasbourg, France, 04.05.1993 - 07.05.1993,
    In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology , Jg. 21 1993, Nr. 2-3, S. 181 – 184
    DOI
  • Porges, M.; Lalinsky, Tibor; Safrankova, Jaroslava; Hudek, Peter; Kraus, Jörg; Tegude, Franz-Josef; von Wendorff, W.C.; Jäger, Dieter
    GaAs MSM Photodiode Using the Highly Doped Channel Layer of a Heterostructure MESFET
    In: Physica Status Solidi (A): Applications and Materials Science , Jg. 136 1993, Nr. 1, S. K65 – K69
    DOI
  • Kraus, Jörg; Meschede, Herbert; Liu, Q.; Prost, Werner; Tegude, Franz-Josef; Lakner, Hubert; Kubalek, Erich
    InyGa1-yAs⧸GaAs interface smoothing by GaAs monolayers in highly strained graded superlattice channels (0.2 ≤ y ≤ 0.4) for pseudomorphic AlxGa1-xAs⧸InyGa1-yAs HFET
    In: Journal of Crystal Growth , Jg. 127 1993, Nr. 1-4, S. 589 – 591
    DOI
  • Safrankova, Jaroslava; Porges, M.; Lalinsky, Tibor; Mozolova, Želmíra; Hudek, Peter; Kostic, Ivan; Kraus, Jörg; von Wendorff, W.C.; Tegude, Franz-Josef; Jäger, Dieter
    Photoelectrical properties of GaAs MSM photodetektor compatible with pseudomorphic heterostructure MESFET
    In: Physica status solidi A: Applications and Materials Science , Jg. 140 1993, Nr. 2, S. K111 – K114
    DOI
  • Buchali, F.; Heedt, Christian H.; Prost, Werner; Gyuro, Imre; Meschede, Herbert; Tegude, Franz-Josef
    Analysis of gate leakage on MOVPE grown InAlAs/InGaAs-HFET
    In: Microelectronic Engineering , Jg. 19 1992, Nr. 1-4, S. 401 – 404
    DOI, Online Volltext
  • Dragoman, Mircea L.; Block, M.; Kremer, Ralf; Buchali, F.; Tegude, Franz-Josef; Jäger, Dieter
    Coplanar microwave phase shifter for InP-based MMICs
    In: Microelectronic Engineering , Jg. 19 1992, Nr. 1-4, S. 421 – 424
    DOI, Online Volltext
  • Brockerhoff, Wolfgang; Ellrodt, P.; Güldner, W.; Heime, Klaus; Tegude, Franz-Josef
    Numerical analysis of InP-JFET by use of a quasi 2D-model
    In: Microelectronic Engineering , Jg. 19 1992, Nr. 1-4, S. 39 – 42
    DOI, Online Volltext
  • Bode, Michael; Schubert, Jurgen; Zander, Willi; Kraus, Jörg; Peters, Dirk; Brockerhoff, Wolfgang; Tegude, Franz-Josef
    On-wafer microwave measurement setup for investigations on hemt's and high tc Superconductors at Cryogenic Temperatures Down to 20 K
    In: IEEE Transactions on Microwave Theory and Techniques , Jg. 40 1992, Nr. 12, S. 2325 – 2331
    DOI, Online Volltext
  • Joseph, M.; Guimaraes, Francisco Eduardo Gontijo; Kraus, J.; Tegude, Franz-Josef
    Characterization of reactive ion etched AlGaAs/GaAs heterostructures by photoluminescence and low temperature Hall measurements
    In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures , Jg. 9 1991, Nr. 3, S. 1456
    DOI
  • Scheffer, F.; Joseph, M.; Prost, Werner; Tegude, Franz-Josef; Lackner, H.; Zumkley, S.; Wingen, G.; Jäger, Dieter
    Growth and characterization of AlGaAs/GaAs Bragg reflectors for nonlinear optoelectronic devices
    In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology , Jg. 9 1991, Nr. 1-3, S. 361 – 364
    DOI
  • Baston, J.; Tegude, Franz-Josef; Heime, Klaus
    Traps at interfaces between GaAs n-type LPE layers and different substrates
    In: Surface Science , Jg. 132 1983, Nr. 1-3, S. 465 – 468
    DOI
  • Tegude, Franz-Josef; Heime, Klaus
    Photo-f.e.t. Method : High-Resolution deep-level measurement technique using a m.e.s.f.e.t. structure
    In: Electronics Letters , Jg. 16 1980, Nr. 1, S. 22 – 23
    DOI, Online Volltext
  • Jäger, Dieter; Tegude, Franz-Josef
    Nonlinear wave propagation along periodic-loaded transmission lines
    In: Applied Physics , Jg. 15 1978, Nr. 4, S. 393 – 397
    DOI

    • Aufsätze

  • Arzi, Khaled; Keller, G.; Rennings, Andreas; Erni, Daniel; Tegude, Franz-Josef; Prost, Werner
    Frequency locking of a free running resonant tunneling diode oscillator by wireless sub-harmonic injection locking
    UCMMT 2017 - UK-Europe-China Workshop on Millimetre-Waves and Terahertz Technologies, 11.-13. September 2017, Liverpool, UK,
    Liverpool 2017

    • Beiträge in Sammelwerken und Tagungsbänden

  • Arzi, Khaled; Keller, Gregor; Rennings, Andreas; Erni, Daniel; Tegude, Franz-Josef; Prost, Werner
    Frequency locking of a free running resonant tunneling diode oscillator by wire-less sub-harmonic injection locking
    In: 10th UK-Europe-China Workshop on Millimetre Waves and Terahertz Technologies, UCMMT 2017 / UCMMT 2017; Liverpool, United Kingdom; 11 - 13 September 2017 2017, S. 8068485
    DOI, Online Volltext
  • Benson, Niels; Bitzer, Lucas A.; Speich, Claudia; Schäfer, David; Erni, Daniel; Prost, Werner; Tegude, Franz-Josef; Schmechel, Roland (Hrsg.)
    Modeling of electron beam induced GaAs nanowire attraction
    In: Abstractband: MiFuN: Microstructural Functionality at the Nanoscale / International Workshop on Microstructural Functionality at the Nanoscale (MiFuN 2017), 4. - 6. Oktober 2017, Duisburg 2017
  • Reuter, Ralf; van Waasen, Stefan; Peters, Dirk; Auer, Uwe; Brockerhoff, Wolfgang; Tegude, Franz-Josef
    A new temperature noise model of HFET with special emphasis on a gate-leakage current and investigation of the bias dependence of the equivalent noise sources
    In: 25th European Microwave Conference: Volume 1 / EuMC 1995; Bologna, Italy; 4 September 1995 2015, S. 205 – 210
    DOI, Online Volltext
  • Peters, Dirk; Daumann, Walter; Brockerhoff, Wolfgang; Reuter, Ralf; Koenig, Eric T.; Tegude, Franz-Josef
    Direct calculation of the HBT small-signal equivalent circuit with special emphasize to the feedback capacitance
    In: 25th European Microwave Conference: Volume 2 / EuMC 1995; Bologna, Italy; 4 September 1995 2015, S. 1032 – 1036
    DOI, Online Volltext
  • Braasch, Th.; David, G.; Hülsewede, R.; Auer, Uwe; Tegude, Franz-Josef; Jäger, Dieter
    Propagation of Microwaves in MMICs Studied by Time- and Frequency-Domain Electro-Optic Field Mapping
    In: Optical sensors: part of Advanced photonics ; 27 - 31 July 2014, Barcelona, Spain / Optics InfoBase, 27 - 31 July 2014, Barcelona 2014, S. 190 – 195
    DOI
  • Keller, Gregor; Tchegho, Anselme; Munstermann, Benjamin; Prost, Werner; Tegude, Franz-Josef; Suhara, Michihiko
    Characterization and modeling of zero bias RF-detection diodes based on triple barrier resonant tunneling structures
    In: International Conference on Indium Phosphide and Related Materials (IPRM), 2013 / International Conference on Indium Phosphide and Related Materials (IPRM), 2013 : 19 - 23 May 2013, Kobe, Japan 2013
    DOI
  • Tegude, Franz-Josef
    III-V-Semiconductor nanowires for the fabrication of optoelectronic and electronic devices
    In: 71st Annual Device Research Conference (DRC), 2013 / 71st Annual Device Research Conference (DRC), 2013 : 23 - 26 June 2013, The University of Notre Dame, Notre Dame 2013, S. 11
    DOI
  • Benner, O.; Lysov, A.; Gutsche, C.; Keller, G.; Schmidt, C.; Prost, Werner; Tegude, Franz-Josef
    Junction field-effect transistor based on GaAs core-shell nanowires
    In: International Conference on Indium Phosphide and Related Materials (IPRM), 2013 / International Conference on Indium Phosphide and Related Materials (IPRM), 2013 : 19 - 23 May 2013, Kobe, Japan 2013
    DOI
  • Keller, Gregor; Tchegho, Anselme; Münstermann, Benjamin; Prost, Werner; Tegude, Franz-Josef; Suhara, Michihiko
    Triple barrier resonant tunneling diodes for microwave signal generation and detection
    In: European Microwave Integrated Circuits Conference 2013 / EuMIC 2013; 6 - 8 Oct. 2013; Nuremberg, Germany 2013, S. 228 – 231
    Online Volltext
  • Yoh, Kanji; Cui, Z.; Konishi, K.; Ohno, M.; Blekker, K.; Prost, Werner; Tegude, Franz-Josef; Harmand, J.-C.
    An InAs nanowire spin transistor with subthreshold slope of 20mV/dec
    In: 70th Annual Device Research Conference (DRC), 2012 / Annual Device Research Conference, 18 - 20 June 2012, The Pennsylvania State University, University Park, Pennsylvania 2012, S. 79 – 80
    DOI, Online Volltext
  • Suhara, Michihiko; Takahagi, Satoshi; Asakawa, Kiyoto; Okazaki, Toshimichi; Nakamura, Masahito; Yamashita, Shin; Itagaki, Yosuke; Saito, Mitsufumi; Tchegho, Anselme; Keller, Gregor; Poloczek, Artur; Prost, Werner; Tegude, Franz-Josef
    Analysis of terahertz zero bias detectors by using a triple-barrier resonant tunneling diode integrated with a self-complementary bow-tie antenna
    In: 70th Annual Device Research Conference (DRC), 2012 / Annual Device Research Conference, 18 - 20 June 2012, The Pennsylvania State University, University Park, Pennsylvania 2012, S. 77 – 78
    Online Volltext, DOI
  • Tegude, Franz-Josef; Prost, Werner
    III-V Semiconductor Nanowire Transistors
    In: Advances in III-V Semiconductor Nanowires and Nanodevices / Wang, Deli; Li, Jianye (Hrsg.) 2012, S. 129 – 144
    DOI
  • Gutsche, Christoph; Regolin, Ingo; Lysov, Andrey; Blekker, Kai; Do, Quoc-Thai; Prost, Werner; Tegude, Franz-Josef
    III/V Nanowires for electronic and optoelectronic applications
    In: Nanoparticles from the gas phase: formation, structure, properties / Lorke, Axel (Hrsg.) 2012, S. 357 – 385
    DOI
  • Grange, Rachel; Brönstrup, Gerald; Sergeyev, Anton; Richter, Jessica; Pertsch, Thomas; Tünnermann, Andreas; Christiansen, Silke; Leiterer, Christian; Fritzsche, Wolfgang; Gutsche, Christoph; Lysov, Andrey; Prost, Werner; Tegude, Franz-Josef
    Imaging of waveguiding and scattering interferences in individual GaAs nanowires via second-harmonic generation
    In: Nanophotonics IV / Andrews, David L.; Nanophotonics, 15 - 19 April 2012, Brussels, Belgium 2012
    DOI
  • Münstermann, Benjamin; Tchegho, Anselme; Keller, Gregor; Tegude, Franz-Josef
    Optimized RTD-HBT VCO design based on large signal transient simulations
    In: International Conference on Indium Phosphide and Related Materials / IPRM 2012; Santa Barbara, United States; 27 - 30 August 2012 2012, S. 32 – 35
    DOI, Online Volltext
  • Keller, Gregor; Tchegho, Anselme; Münstermann, Benjamin; Prost, Werner; Tegude, Franz-Josef
    Sensitive high frequency envelope detectors based on triple barrier resonant tunneling diodes
    In: International Conference on Indium Phosphide and Related Materials / IPRM 2012; Santa Barbara, United States; 27 - 30 August 2012 2012, S. 36 – 39
    DOI, Online Volltext
  • Lysov, Andrey; Gutsche, Christoph; Prost, Werner; Tegude, Franz-Josef
    Single GaAs nanowire photovoltaic devices under very high power illumination
    In: International Conference on Indium Phosphide and Related Materials / IPRM 2012; Santa Barbara, United States; 27 - 30 August 2012 2012, S. 253 – 256
    DOI, Online Volltext
  • Tchegho Kamgaing, A.; Münstermann, Björn; Geitmann, Ralf; Benner, Oliver; Blekker, Kai; Prost, Werner; Tegude, Franz-Josef
    High performance submicron RTD design for mm-wave oscillator applications
    In: 23rd International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM 2011; May 22 - 26, 2011; Berlin, Germany 2011, S. 133 – 136
    Online Volltext
  • Lysov, Andrey; Gutsche, Christoph; Offer, Matthias; Regolin, Ingo; Prost, Werner; Tegude, Franz-Josef
    Spatially resolved photovoltaic performance of axial GaAs nanowire pn-diodes
    In: 2011 69th Annual Device Research Conference (DRC 2011) / Annual Device Research Conference, Santa Barbara, California, USA, 20 - 22 June 2011 2011, S. 53 – 54
    DOI, Online Volltext
  • Lysov, Andrey; Gutsche, Christoph; Offer, Matthias; Regolin, Ingo; Prost, Werner; Tegude, Franz-Josef
    The optoelectronic performance of axial and radial GaAs nanowire pn-diodes
    In: 23rd International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM 2011; May 22 - 26, 2011; Berlin, Germany 2011, S. 276 – 278
    Online Volltext
  • Münstermann, Benjamin; Blekker, Kai; Tchegho, Anselme; Brockerhoff, Wolfgang; Tegude, Franz-Josef
    Design of low-power RTD-based-VCOs for Ka-band application
    In: German Microwave Conference Digest of Papers / GeMiC 2010; Berlin, Germany; 15 - 17 March 2010 2010, S. 39 – 42
    Online Volltext
  • Prost, Werner; Tegude, Franz-Josef
    Fabrication and RF performance of InAs Nanowire FET
    In: Device Research Conference (DRC), 2010 / Device Research Conference, 21 - 23 June 2010, The University of Notre Dame, Notre Dame, Indiana 2010, S. 279 – 282
    DOI, Online Volltext
  • Tchegho, A.; Muenstermann, B.; Gutsche, C.; Poloczek, Artur; Blekker, K.; Prost, Werner; Tegude, Franz-Josef
    Scalable high-current density RTDs with low series resistance
    In: International Conference on Indium Phosphide & Related Materials (IPRM), 2010: Conference Proceedings / International Conference on Indium Phosphide & Related Materials, May 31, 2010 - June 4, 2010, Takamatsu Symbol Tower, Kagawa, Japan 2010, S. 358 – 361
    DOI, Online Volltext
  • Poloczek, Artur; Münstermann, Benjamin; Nannen, Ingo; Regolin, Ingo; Tegude, Franz-Josef
    Wavelength-selective receiver for simultaneous λ=1.3 μm and λ=1.55 μm RF optical transmission
    In: International Conference on Indium Phosphide & Related Materials: Conference Proceedings / IPRM 2009; Newport Beach, United States; 10 - 14 May 2009 2009, S. 295 – 297
    DOI, Online Volltext
  • Blekker, Kai; Do, Quoc Thai; Matiss, Andreas; Prost, Werner; Tegude, Franz-Josef
    High frequency characterisation of single inas nanowire field-effect transistors
    In: 20th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM 2008; Versailles, France; 25 - 29 May 2008 2008, S. 4703003
    DOI, Online Volltext
  • Münstermann, Benjamin; Matiss, Andreas; Brockerhoff, Wolfgang; Tegude, Franz-Josef
    Large-signal performance of resonant tunnelling diodes in K-Band oscillators
    In: Proceedings of the 38th European Microwave Conference / EuMC 2008; Amsterdam, Netherlands; 27 - 31 October 2008 2008, S. 1469 – 1472
    DOI, Online Volltext
  • Matiss, Andreas; Poloczek, Artur; Brockerhoff, Wolfgang; Prost, Werner; Tegude, Franz-Josef
    Monostable-bistable threshold logic elements in a fully complementary optical receiver circuit for high frequency applications
    In: 20th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM 2008; Versailles, France; 25 - 29 May 2008 2008, S. 4702921
    DOI, Online Volltext
  • Nannen, Ingo; Poloczek, Artur; Matiss, Andreas; Brockerhoff, Wolfgang; Regolin, Ingo; Tegude, Franz-Josef
    INP-hemt-tia with differential optical input using vertical high topology pin-diodes
    In: 19th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM '07; 14 - 18 May 2007; Matsue, Japan 2007, S. 107 – 109
    DOI, Online Volltext
  • Poloczek, Artur; Weiß, Mario; Fedderwitz, Sascha; Stöhr, Andreas; Prost, Werner; Jäger, Dieter; Tegude, Franz-Josef
    Integrated InGaAs pin-diode on exactly oriented silicon (001) substrate suitable for 10 Gbit/s digital applications
    In: 20th Annual Meeting of the IEEE Lasers and Electro-Optics Society: Conference Proceedings / LEOS; Lake Buena Vista, United States; 21 - 25 October 2007 2007, S. 180 – 181
    DOI
  • Matiss, Andreas; Poloczek, Artur; Brockerhoff, Wolfgang; Prost, Werner; Tegude, Franz-Josef
    Large-signal analysis and ac modelling of sub-micron resonant tunnelling diodes
    In: 2nd European Microwave Integrated Circuits Conference: Conference Proceedings / EuMIC 2007; Munich, Germany; 8 - 12 October 2007 2007, S. 207 – 210
    DOI, Online Volltext
  • Prost, Werner; Blekker, Kai; Do, Quoc-Thai; Regolin, Ingo; Müller, Sven; Stichtenoth, Daniel; Wegener, Katharina; Ronning, Carsten; Tegude, Franz-Josef
    Modeling the carrier mobility in nanowire channel fet
    In: Low-Dimensional Materials: Synthesis, Assembly, Property Scaling and Modeling / MRS Spring Meeting 2007; San Francisco, United States; 9 - 13 April 2007 2007, S. 139 – 144
    DOI
  • Do, Quoc Thai; Blekker, Kai; Regolin, Ingo; Prost, Werner; Tegude, Franz-Josef
    Single n-InAs nanowire MIS-field-effect transistor : Experimental and simulation results
    In: 19th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM '07; 14 - 18 May 2007; Matsue, Japan 2007, S. 392 – 395
    DOI, Online Volltext
  • Matiss, Andreas; Poloczek, Artur; Stöhr, Andreas; Brockerhoff, Wolfgang; Prost, Werner; Tegude, Franz-Josef
    Sub-nanosecond pulse generation using resonant tunneling diodes for impulse radio
    In: IEEE International Conference on Ultra-Wideband 2007 / ICUWB; 24 - 27 September 2007; Singapore 2007, S. 354 – 359
    DOI, Online Volltext
  • Poloczek, Artur; Wang, Wei; Driesen, Jörn; Regolin, Ingo; Prost, Werner; Tegude, Franz-Josef
    Concept and Development of a New Mobile-Gate with All Optical Input
    In: German Microwave Conference / GeMic`06; Karslruhe, Germany; 28.03.2006 - 30.03.2006 2006
  • Noé, Reinhold; Rückert, Ulrich; Achiam, Yakoov; Tegude, Franz-Josef; Porte, Henri
    European "synQPSK" project : Toward synchronous optical quadrature phase shift keying with DFB lasers
    In: Coherent Optical Technologies and Applications / COTA 2006; Whistler, Canada; 25–30 June 2006 2006, S. CThC4
    DOI (Open Access)
  • Do, Quoc Thai; Regolin, Ingo; Khorenko, Victor; Prost, Werner; Tegude, Franz-Josef
    Fabrication and electrical characterisation of n-InAs single nanowhisker field-effect transistors
    In: International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM 2006; Princeton; United States; 8 -11 May 2006 2006, S. 436 – 438
    DOI, Online Volltext
  • Noé, Reinhold; Pfau, Timo; Achiam, Yakoov; Tegude, Franz-Josef; Porte, Henri
    Integrated components for optical QPSK transmission
    In: Frontiers in Optics 2006 / FiO 2006; Rochester, United States; 10 October 2006 2006, S. FMD4
    DOI
  • Matiss, Andreas; Brockerhoff, Wolfgang; Poloczek, Artur; Prost, Werner; Tegude, Franz-Josef
    Low-temperature DC and RF measurement and modelling of InGaAs-InAlAs resonant tunneling diodes down to 15 K
    In: Proceedings of the 1st European Microwave Integrated Circuits Conference / EuMIC 2006; Manchester; United Kingdom; 10 - 13 September 2006 2006, S. 344 – 347
    DOI, Online Volltext
  • Matiss, A.; Driesen, J.; Ehrich, S.; Prost, Werner; Tegude, Franz-Josef
    Bias Dependent Boolean Multivalue Logic Application of Resonant Tunneling Bipolar Transistors
    In: Proceedings of the German Microwave Conference / GeMic 2005, Ulm, Germany, 05.04.2005 - 07.04.2005 2005, S. 156 – 159
  • Khorenko, Victor; Regolin, Ingo; Neumann, Stefan; Do, Quoc Thai; Prost, Werner; Tegude, Franz-Josef
    Characterisation of GaAs nanowhiskers grown on GaAs and Si substrates
    In: 17th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM 2005; Glasgow, Scotland; 8 - 12 May 2005 2005, S. 363 – 366
    DOI, Online Volltext
  • Prost, Werner; Kelly, Peter M.; Guttzeit, Andreas; Khorenko, Victor; Khorenko, E.; Matiss, Andreas; Driesen, Jörn; Mofor, Augustine Che; Bakin, Andrey; Poloczek, Artur; Neumann, Stefan; Stöhr, Andreas; Jäger, Dieter; Mc Ginnity, M.; Schlachetzki, Andreas; Tegude, Franz-Josef
    Design and modelling of A III/V mobile-gate with optical input on a silicon substrate
    In: Conference Proceedings - International Conference on Indium Phosphide and Related Materials / IPRM 2005; Glasgow, Scotland; 8 - 12 May 2005 2005, S. 17 – 20
    DOI, Online Volltext
  • Krämer, Stefan; Neumann, Stefan; Prost, Werner; Tegude, Franz-Josef; Malzer, Stefan; Döhler, Gottfried H.
    Determination of piezo-electric fields in spontaneously ordered InGaAsP
    In: 27th International Conference on the Physics of Semiconductors / ICPS-27, Flagstaff, Arizona, 26 - 30 July 2004 2005, S. 119 – 120
    DOI
  • Topaloglu, Serkan; Driesen, Jörn; Poloczek, Artur; Tegude, Franz-Josef
    Fabrication of transferred-substrate HBT with simple technology
    In: 17th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM 2005; Glasgow, Scotland; 8 - 12 May 2005 2005, S. 508 – 511
    DOI, Online Volltext
  • Prost, Werner; Khorenko, Victor; Mofor, Augustine Che; Bakin, Andrey; Khorenko, E.; Ehrich, Silja; Wehmann, Hergo Heinrich; Schlachetzki, Andreas; Tegude, Franz-Josef
    High-speed InP-based resonant tunnelling diode on silicon substrate
    In: Proceedings of the 35th European Solid-State Device Research Conference / ESSDERC 2005; Grenoble; France; 12 - 16 September 2005 2005, S. 257 – 260
    DOI, Online Volltext
  • Driesen, Jörn; Topaloglu, Serkan; Tegude, Franz-Josef
    Optimizing lateral HBT design by utilizing performance estimations
    In: 17th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM 2005; Glasgow, Scotland; 8 - 12 May 2005 2005, S. 441 – 444
    DOI, Online Volltext
  • Do, Quoc Thai; Katzer, Klaus Dieter; Martinez-Albertos, José Luis; Khorenko, Victor; Mertin, Wolfgang; Prost, Werner; Moore, Barry D.; Tegude, Franz-Josef
    A nanoparticle-coated nanocrystal-gate for an INP-based heterostructure field-effect transistor
    In: 16th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM`04; Kagoshima, Japan; 31 May - 4 June 2004 2004, S. 435 – 438
    DOI, Online Volltext
  • Khorenko, Victor; Mofor, Augustine Che; Bakin, Andrey; Neumann, Stefan; Guttzeit, Andreas; Wehmann, Hergo Heinrich; Prost, Werner; Schlachetzki, Andreas; Tegude, Franz-Josef
    Buffer optimization for InP-on-si (001) quasi-substrates
    In: 16th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM`04; Kagoshima, Japan; 31 May - 4 June 2004 2004, S. 118 – 121
    DOI, Online Volltext
  • Ehrich, Silja; Driesen, Jörn; Neumann, Stefan; Topaloglu, Serkan; Brockerhoff, Wolfgang; Tegude, Franz-Josef
    Investigation of the rf-noise behaviour of InP based DHBT with InGaAs base and GaAsSb base
    In: Noise in Devices and Circuits II / Noise in Devices and Cirquits II, 26 - 28 May 2004, Maspalomas, Spain / Danneville, Francois; Bonani, Fabrizio; Deen, M. Jamal; Levinshtein, Michael E. (Hrsg.) 2004, S. 164 – 172
    DOI
  • Khorenko, E.; Prost, Werner; Tegude, Franz-Josef; Stoffel, Mathieu; Duschl, R.; Dashiell, Michael W.; Schmidt, O.G.; Klimeck, Gerhard
    Manufacturability and electrical characteristics of Si/SiGe interband tunnelling diodes
    In: 5th International Conference on Semiconductor Devices and Microsystmes: Conference Proceedings / ASDAM 2004; Slomenice, Slovakia; 17 - 21 October 2004 2004, S. 29 – 32
    Online Volltext, DOI
  • Alkeev, Nikolay V.; Velling, Peter; Khorenko, E.; Prost, Werner; Tegude, Franz-Josef
    Resonant tunneling diode immedunce dependence analysis
    In: Fifth International Kharkov Symposium on Physics and Engineering of Microwaves, Millimeter, and Submillimeter Waves: Symposium Proceedings / MSMW'04; Kharkov, Ukraine; 21 - 26 June 2004 / Kostenko, A.; Nosich, A.I.; Yakovenko, V.F. (Hrsg.) , Jg. 2 2004, S. 566 – 568
  • Ehrich, Silja; Bertenburg, Ralf M.; Agethen, Michael; Brennemann, Andreas; Brockerhoff, Wolfgang; Tegude, Franz-Josef
    A consistent and scalable PSPICE HFET-model for DC- and S-parameter-simulation
    In: IEEE International Conference on Microelectronic Test Structures / ICMTS 2002; Cork, Ireland; 8 - 11 April 2002 2003, S. 67 – 70
    DOI, Online Volltext
  • Neumann, Stefan; Prost, Werner; Tegude, Franz-Josef
    Growth of highly p-type doped GaAsSb : C for HBT application
    In: International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM`03; Santa Barbara, USA; 12.05.2003 - 16.05.2003 2003, S. 575 – 578
    DOI, Online Volltext
  • Neumann, Stefan; Prost, Werner; Tegude, Franz-Josef
    InP based double heterojunction bipolar transistor with carbon doped GaAsSb : C base grown by LP-MOVPE
    In: Proceedings of the 11th European GAAS and Related III-V Compounds Application Symposium / GAAS`03; München, Germany; 06.10.2003 - 10.10.2003 2003, S. 255 – 257
  • Jin, Z.; Neumann, Stefan; Prost, Werner; Tegude, Franz-Josef
    Mechanism of Current Gain increase of Heterostructure Bipolar Transistors Passivated by Low-Temperature Deposited SiNx
    In: Proceedings of the 11th European GAAS and Related III-V Compounds Application Symposium / GAAS`03; München, Germany; 06.10.2003 - 10.10.2003 2003, S. 259 – 262
    DOI
  • Jin, Zhi; Otten, F.; Neumann, Stefan; Reimann, Thorsten; Prost, Werner; Tegude, Franz-Josef
    Passivation of graded-base InP/InGaAs/InP double heterostructure bipolar transistors by room-temperature deposited SiNₓ
    In: International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM`03; Santa Barbara, USA; 12.05.2003 - 16.05.2003 2003, S. 156 – 159
    DOI, Online Volltext
  • Schneider, Marc; Reimann, Thorsten; Heinzelmann, Robert; Stöhr, Andreas; Velling, Peter; Neumann, S.; Bertenburg, Ralf M.; Tegude, Franz-Josef; Jäger, Dieter
    A novel 1.55µm HBT-Electroabsorption modulator
    In: Proceedings of the International Topical Meeting on Microwave Photonics (MWP `01) / MWP `01, 7-9 Jan. 2002, Long Beach, CA, USA 2002, S. 21 – 24
    DOI
  • Glösekötter, Peter; Pacha, Christian; Goser, Karl F.; Prost, Werner; Kim, Samuel O.; van Husen, Holger; Reimann, Thorsten; Tegude, Franz-Josef
    Asynchronous circuit design based on the RTBT monostable-bistable logic transition element (MOBILE)
    In: Proceedings of the 15th Symposium on Integrated Circuits and Systems Design / SBCCI 2002; Porto Alegre, Brazil; 9 - 14 September 2002 2002, S. 365 – 370
    DOI, Online Volltext
  • Reimann, Thorsten; Schneider, Markus; Neumann, Stefan; Tegude, Franz-Josef; Jäger, Dieter
    Different approaches for integrating HBTs and EAMs
    In: The 10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications / EDMO 2002 ; 18 - 19 November; Manchester, UK 2002, S. 149 – 154
    DOI, Online Volltext
  • Prost, Werner; Kim, Samuel O.; Glösekötter, Peter; Pacha, Christian; van Husen, Holger; Reimann, Thorsten; Goser, Karl F.; Tegude, Franz-Josef
    Experimental threshold logic implementations based on resonant tunnelling diodes
    In: Proceedings of the 9th IEEE International Conference on Electronics, Circuits, and Systems / ICECS 2002; 15 - 18 September 2002; Dubrovnik, Croatia , Jg. 2 2002, S. 669 – 672
    DOI, Online Volltext
  • Neumann, Stefan; Spieler, Jochen; Blache, R.; Kiesel, Peter; Prost, Werner; Döhler, Gottfried H.; Tegude, Franz-Josef
    MOVPE growth and polarisation dependence of (dis-)ordered InGaAsP PIN diodes for optical fibre applications
    In: 14th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / Stockholm, Sweden; 12 - 16 May 2002 2002, S. 127 – 130
    DOI, Online Volltext
  • Schneider, Marc; Reimann, Thorsten; Stöhr, Andreas; Neumann, S.; Tegude, Franz-Josef; Jäger, Dieter
    Monolithically integrated optoelectronic circuits using HBT, EAM, and TEAT
    In: Proceedings of the International Topical Meeting on Microwave Photonics (MWP 2002) / MWP 2002, November 5-8, Awaji, Japan 2002, S. 349 – 352
  • Glösekötter, Peter; Pacha, Christian; Goser, Karl F.; Prost, Werner; Kim, Samuel; van Husen, Holger; Reimann, Thorsten; Tegude, Franz-Josef
    Pseudo dynamic gate design based on the Resonant Tunneling-Bipolar Transistor (RTBT)
    In: Proceedings of the 32nd European Solid-State Device Research Conference / ESSDERC 2002; Firenze, Italy; 24 - 26 September 2002 / Gnani, E.; Baccarani, G.; Rudan, M. (Hrsg.) 2002, S. 211 – 214
    DOI, Online Volltext
  • Reimann, T.; Schneider, Markus; Neumann, Stefan; Stöhr, Andreas; Jäger, Dieter; Tegude, Franz-Josef
    Waveguide HBT electroabsorption modulators : Devices and circuits
    In: 14th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / Stockholm, Sweden; 12 - 16 May 2002 2002, S. 123 – 126
    DOI, Online Volltext
  • Reimann, Thorsten; Schneider, Marc; Neumann, S.; Stöhr, Andreas; Tegude, Franz-Josef; Jäger, Dieter
    Waverguide HBT electroabsorption modulators : devices and circuits
    In: Proceedings of the 14th International Conference on Indium Phosphide and Related Materials (IPRM) / IPRM: May 12-16, 2002, Stockholm, Sweden 2002, S. 123 – 126
  • Agethen, Michael; Schüller, Silja; Velling, Peter; Brockerhoff, Wolfgang; Tegude, Franz-Josef
    Consistent small-signal and rf-noise parameter modelling of carbon doped InP/InGaAs HBT
    In: International IEEE Microwave Symposium Digest / MTT-S 2001; Phoenix, United States; 20 - 25 May 2001 , Jg. 1 2001, S. 1765 – 1768
    DOI, Online Volltext
  • Otten, W.; Glösekötter, Peter; Velling, Peter; Brennemann, Andreas; Prost, Werner; Goser, Karl F.; Tegude, Franz-Josef
    InP-based monolithically integrated RTD/HBT MOBILE for logic circuits
    In: 13th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM 2001; Nara, Japan; 14.05.2001 - 18.05.2001 2001, S. 232 – 235
    DOI, Online Volltext
  • Reimann, Thorsten; Schneider, Markus; Velling, Peter; Neumann, Stefan; Agethen, Michael; Bertenburg, Ralf M.; Heinzelmann, Robert; Stöhr, Andreas; Jäger, Dieter; Tegude, Franz-Josef
    Integration of heterostructure bipolar transistor and electroabsorption waveguide modulator based on a multifunctional layer design for 1.55μm
    In: 13th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM 2001; Nara, Japan; 14.05.2001 - 18.05.2001 2001, S. 440 – 443
    DOI, Online Volltext
  • Pacha, Christian; Prost, Werner; Tegude, Franz-Josef; Glösekötter, Peter; Goser, Karl
    Resonant Tunneling Device Logic : A Circuit Designer's Perspective
    In: Circuit Paradigm in the 21st Century: ECCTD ’01 ; Proceedings of the 15th European Conference on Circuit Theory ; Helsinki University of Technology, Finland, 28th - 31st August 2001 ; Vol. 1 / European Conference on Circuit Theory and Design (ECCTD) ; 28th - 31st August 2001, Espoo, Finland / Porra, Veikko (Hrsg.) 2001, S. 189 – 192
  • Prost, Werner; Auer, Uwe; Degenhardt, Jan; Brennemann, Andreas; Pacha, Christian; Goser, Karl F.; Tegude, Franz-Josef
    Technology of a depth-2 full-adder circuit using the InP RTD/HFET mobile
    In: 13th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM 2001; Nara, Japan; 14.05.2001 - 18.05.2001 2001, S. 228 – 231
    DOI, Online Volltext
  • Prost, Werner; Auer, Uwe; Tegude, Franz-Josef; Pacha, Christian; Goser, Karl F.; Duschl, R.; Eberl, Karl; Schmidt, O.G.
    Tunnelling diode technology
    In: Proceedings of the 31s International Symposium on Multiple-Valued Logic / 22-24 May 2001; Warsaw, Poland 2001, S. 49 – 58
    DOI, Online Volltext
  • Brennemann, Andreas; Bushehri, E.; Agethen, Michael; Bertenburg, Ralf M.; Brockerhoff, Wolfgang; Staroselsky, Victor I.; Bratov, V.; Schlichter, T.; Tegude, Franz-Josef
    11-stage ring oscillator with nonlinear negative feedback for high speed digital applications
    In: International Conference on Indium Phosphide and Related Materials: Conference Proceedings / Williamsburg, USA; 14 -18 May 2000 2000, S. 577 – 580
    DOI, Online Volltext
  • Glösekötter, Peter; Pacha, Christian; Goser, Karl F.; Wirth, Gilson Inácio; Prost, Werner; Auer, Uwe; Agethen, Michael; Velling, Peter; Tegude, Franz-Josef
    Digital circuit design based on the resonant-tunneling-hetero-junction-bipolar-transistor
    In: Proceedings of the 13th Symposium on Integrated Circuits and Systems Design / SBCCI 2000; Manaus, Brazil; 18 - 24 September 2000 2000, S. 150 – 155
    DOI, Online Volltext
  • Kim, Samuel O.; Velling, Peter; Auer, Uwe; Agethen, Michael; Prost, Werner; Tegude, Franz-Josef
    High f/sub T/, high current gain InP/InGaAs : C HBT grown by LP-MOVPE with non-gaseous sources
    In: International Conference on Indium Phosphide and Related Materials: Conference Proceedings / Williamsburg, USA; 14 -18 May 2000 2000, S. 470 – 472
    DOI, Online Volltext
  • Kim, Samuel O.; Velling, Peter; Agethen, Michael; Reimann, Thorsten; Prost, Werner; Tegude, Franz-Josef
    InP-Based HBT with Graded InGaAlAs Base Layer Grown by LP-MOVPE
    In: Proceedings of the European GaAs and other Semiconductor Application Symposium / GAAS AS 2000; Paris, France; 02.10.2000 - 03.10.2000 2000
  • Velling, Peter; Agethen, Michael; Herenda, E.; Prost, Werner; Stolz, W.; Tegude, Franz-Josef
    LP-MOVPE Growth of Carbon Doped In0.48Ga0.52P/GaAs HBT Using an All-Liquid-Source Configuration
    In: 26th International Symposium on Compound Semiconductors / ISCS 2000; Berlin, Germany; 22.08.2000 - 26.08.2000 2000
  • Fix, W.; Welker, M.; Geisselbrecht, W.; Kiesel, P.; Döhler, G.H.; Velling, Peter; Prost, Werner; Tegude, Franz-Josef
    A monolithically integrated smart pixel based on a photoconductive switch and a n-i-p-i modulator
    In: Conference on Lasers and Electro-Optics / CLEO '99; Baltimore, USA; 23.05.1999 - 28.05.1999 1999
    DOI, Online Volltext
  • Auer, Uwe; Prost, Werner; Brockerhoff, Wolfgang; Tegude, Franz-Josef
    Consistent physical model for the gate-leakage and breakdown in InAlAs/InGaAs HFET's
    In: Proceedings of the 11th International Conference on Indium Phosphide and Related Materials / IPRM`99; Davos, Switz; 16 -20 May 1999 1999, S. 439 – 442
    DOI, Online Volltext
  • Otten, F.; Kruis, Frank Einar; Peled, A.; Prost, W.; Fissan, Heinz; Tegude, Franz-Josef
    Electrical Properties of Discontinuous PbS Nanoparticle Films on MSM and MIM Detectors
    In: Book of abstracts / Second Joint NSF-ESF Symposium on Nanoparticles: Technologies and Applications: Tacoma, Washington, USA, October 10, 1999 / Joint NSF-ESF Symposium on Nanoparticles: Technologies and Applications ; (Tacoma, Wash.) : 1999.10.10 / Pui, David H. (Hrsg.) 1999, S. P4-1 – P4-4
  • Berntgen, Jürgen; Lim, Teck Leong; Daumann, Walter; Auer, Uwe; Tegude, Franz-Josef; Matulionis, Arvydas; Heime, Klaus
    Hooge parameter of InP-based 2DEG structures and its dependence on channel design and temperature
    In: The seventh van der ziel symposium on quantum 1/f noise and other low frequency fluctuations in electronic devices / 7. Symposium ; St. Louis, Missouri; 7.-8.8.1998 / Handel, P.H.; Chung, A.L. (Hrsg.) 1999, S. 59 – 70
    DOI (Open Access)
  • Velling, Peter; Agethen, Michael; Herenda, E.; Prost, Werner; Stolz, W.; Tegude, Franz-Josef
    LP-MOVPE grown GaAs- and InP-based HBTs using all-liquid alternative sources
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  • Heedt, Christian H.; Gottwald, Péter; Prost, Werner; Tegude, Franz-Josef; Künzel, Harald M.; Dickmann, Jürgen; Dämbkes, Heinrich
    Material characterisation of InGaAs/InAlAs heterostructure field effect transistors with heavily doped n-type InAlAs donor layer
    In: Third International Conference on Indium Phosphide and Related Materials: Conference Proceedings / 3rd International Conference on Indium Phosphide and Related Materials; Cardiff, Wales; 8 - 11 April 1991 1991, S. 284 – 287
    Online Volltext, DOI
  • Tegude, Franz-Josef; Heime, Klaus
    Investigation of Deep Levels at Interfaces by Means of FET-Structures and Optical Excitation
    In: Proceedings of the 11th International Symposium on GaAs and Related Compounds / GaAs RC´84; Biarritz, France; 26.09. - 28.09.1984 1984, S. 305 – 310
  • Tegude, Franz-Josef; Baston, J.; Arnold, Norbert; Heime, Klaus
    Deep Level Profiles of GaAs Active Layers and their Correlation to Substrate Properties
    In: Semi-insulating III-V materials: Evian 1982 / Conference on Semi-Insulating III-V Materials 2; 1982.04.19-21; Evian, France 1982, S. 291 – 297
  • Tegude, Franz-Josef; Heime, Klaus
    Deep Level Measurements of Layers on Semi-Insulating GaAs Substrates by Means of the Photofet Method
    In: Semi-Insulating III–V Materials: Nottingham 1980 / Rees, G. J. (Hrsg.) 1980, S. 321 – 328
    DOI

    • Lexikoneinträge

  • Agethen, Michael; Reuter, R.; Breder, T.; Bertenburg, Ralf M.; Brockerhoff, Wolfgang; Tegude, Franz-Josef
    High Frequency Noise
    In: Wiley Encyclopedia of Electrical and Electronics Engineering / Webster, John G. (Hrsg.) , Jg. 14 1999, S. 392 – 410

    • Vorträge

  • Tegude, Franz-Josef
    III-V-Nanowire FET
    Symposium on Opto- and Microelectronic Devices and Circuits 2010 (SODC), Berlin, Germany, 04.10.2010 - 07.10.2010,
    Berlin, Germany 2010
  • Regolin, Ingo; Gutsche, C.; Lysov, A.; Prost, Werner; Malek, Margarethe; Vinaji, S.; Mertin, Wolfgang; Bacher, Gerd; Offer, Matthias; Lorke, Axel; Tegude, Franz-Josef
    Axial doping profile in VLS grown GaAs:Zn nanowires
    13th European Workshop on Metalorganic Vapor Phase Epitaxy, 7. – 10. Juni 2009, Ulm, Germany,
    2009
  • Prost, Werner; Poloczek, A.; Matiss, A.; Driesen, J.; Tegude, Franz-Josef
    High-Speed Monostable-Bistable Transition Logic Element Gates with Optical Inputs at 1.3µm/1.55µm
    XXII Conference on Design of Circuits and Integrated Systems 2007 (DCIS); Sevilla, Spain; 21.11.2007 - 23.11.2007,
    Sevilla, Spain 2007
  • Prost, Werner; Khorenko, V.; Kelly, P.; Mofor, A.-C.; Neumann, S.; Poloczek, Artur; Brennenmann, A.; Matiss, A.; Bakin, A.; Stöhr, Andreas; Jäger, Dieter; Ginnity, M. Mc; Schlachetzki, A.; Tegude, Franz-Josef
    High Performance III/V RTD and PIN Diodes on a silicon substrate
    6th Topical Workshop on Heterostructure Microelectronics, TWHM Awaji Island, Hyogo, Japan, Aug. 22-25, 2005,
    Awaji Island, Hyogo 2005
  • Matiss, A.; Janßen, Guido; Bertenburg, Ralf M.; Brockerhoff, Wolfgang; Tegude, Franz-Josef
    Optical Sensitivity of a Monolithic Integrated InP PIN-HEMT-HBT Transimpedance Amplifier
    European Microwave Workshops and Chort Courses, EuMW`04; Amsterdam, The Netherlands; 11.10.2004 - 15.10.2004,
    Amsterdam, The Netherlands 2004
  • Neumann, Stefan; Topaloglu, S.; Driesen, J.; Jin, Z.; Prost, Werner; Tegude, Franz-Josef
    Study of ohmic contacts and interface layers of carbon doped GaAsSb/InP heterostructures for DHBT application
    12th International Conference on Metalorganic Vapour Phase Epitaxy (MOVPE), Lahaina, Hawaii, USA, 30.05.2004 - 04.06.2004,
    Lahaina, USA 2004
  • Khorenko, E.; Ehrich, S.; Prost, Werner; Tegude, Franz-Josef
    Tunneling Diodes for Compact High Speed Circuits
    3rd Joint Symposium on Opto- and Microelectronic Devices and Circuits (SODC), Wuhan, China, 21.05.2004 - 30.05.2004,
    Wuhan, China 2004
  • Prost, Werner; Neumann, Stefan; Velling, Peter; Tegude, Franz-Josef
    LP-MOVPE growth for high-speed electronic devices on InP
    10th European Workshop on MOVPE and Rel. Growth Techniques (EW MOVPE), Leece, Italy, 08.06.2003 - 11.06.2003,
    Leece, Italy 2003
  • Schneider, M.; Reimann, Thorsten; Tegude, Franz-Josef; Jäger, Dieter
    Multifunctional 1.55µm transistor-electroabsorption-transceiver
    2003
  • Ehrich, Silja; Agethen, Michael; Brockerhoff, Wolfgang; Tegude, Franz-Josef
    RF- and Noise Modeling of Semiconductor Devices based on InP
    ITG Fachtagung 2003,
    2003
  • Ehrich, S.; Agethen, Michael; Velling, Peter; Brennemann, Andreas; Bertenburg, Ralf M.; Brockerhoff, Wolfgang; Tegude, Franz-Josef
    Scaling of Small-Signal and RF-Noise Parameters with Respect to the Emitter-Area of Single HBT based on InP
    14th Workshop on Semiconductor Modeling and Simulation of Electron Devices (MSED), Barcelona, Spain, 16.10.2003 - 17.10.2003,
    Barcelona, Spain 2003
  • Ehrich, S.; Agethen, Michael; Brockerhoff, Wolfgang; Tegude, Franz-Josef
    A Consistent PSPICE-Model for InP HBT
    13th Workshop on Physical Simulation of Semiconductor Devices (PSSD), Ilkley, West Yorkshire, U.K., 25.03.2002 - 26.03.2002,
    Ilkley, U.K. 2002
  • Otten, Frank; Kruis, Frank Einar; Prost, Werner; Tegude, Franz-Josef; Fissan, Heinz
    Deposition of Gas-Phase Generated PbS Nanocrystals onto Patterned Substrates
    7th International Conference on Nanometer-scale Science and Technology (Nano), 21th European Conference on Surface Science (ECOSS) , Malmö, Sweden, 24.06.2005 - 28.06.2002,
    Malmö, Sweden 2002
  • Schlothmann, B.; Bertenburg, Ralf M.; Agethen, Michael; Velling, Peter; Brockerhoff, Wolfgang; Tegude, Franz-Josef
    RF-Simulation of InGaAs/InP Heterostructure Bipolar Transistors
    13th Workshop on Physical Simulation of Semiconductor Devices (PSSD), Ilkley, West Yorkshire, U.K., 25.03.2002 - 26.03.2002,
    Ilkley, U.K. 2002
  • Spieler, J.; Blache, R.; Lese, A.; Kiesel, P.; Döhler, G.H.; Neumann, S.; Velling, Peter; Prost, Werner; Tegude, Franz-Josef
    Spontaneous Group III and V Superlattice Ordering in InGaAsP
    26th International Conference on the Physics of Semiconductors (ICPS), Edingburgh, U.K., 29.07.2002 - 02.08.2002,
    Edingburgh, U.K. 2002
  • Spieler, J.; Blache, R.; Lese, A.; Kiesel, P.; Döhler, G.H.; Neumann, S.; Velling, Peter; Prost, Werner; Tegude, Franz-Josef
    Spontaneous Group III and V Superlattice Ordering in InGaAsP
    International Conference on Signal Processing (ICSP), Beijing, China, 26.08.2002 - 30.08.2002,
    Beijing, China 2002
  • Ehrich, S.; Agethen, Michael; Bertenburg, Ralf M.; Brennemann, Andreas; Brockerhoff, Wolfgang; Tegude, Franz-Josef
    A Consistent and Scalable PSPICE Compound Semiconductor HFET Model for DC- and S-Parameter Simulation
    9th European GaAs and other Semiconductor Application Symposium (GAAS AS), London, U.K., 24.09.2001 - 25.09.2001,
    London, U.K. 2001
  • Schüller, S.; Bertenburg, Ralf M.; Agethen, Michael; Brennemann, Andreas; Brockerhoff, Wolfgang; Tegude, Franz-Josef
    A New Consistent and Scalable PSPICE Model for Enhancement and Depletion-Type HFET
    11th Conference and Exhibition on Microwaves, Radio Communication and Electromagnetic Compatibility (MIOP), Stuttgart, Germany, 08.05.2001 - 10.05.2001,
    Stuttgart, Germany 2001
  • Agethen, Michael; Schüller, S.; Velling, Peter; Brockerhoff, Wolfgang; Tegude, Franz-Josef
    Carbon Doped InP/InGaAs HBT : Consistent Small_Signal and RF-Noise Modelling and Characterization
    Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Cagliari, Italy, 27.05.2001 - 30.05.2001,
    Cagliari, Italy 2001
  • Reimann, Thorsten; Schneider, Marc; Velling, Peter; Neumann, S.; Agethen, Michael; Bertenburg, Ralf M.; Heinzelmann, Robert; Stöhr, Andreas; Jäger, Dieter; Tegude, Franz-Josef
    Demonstration von Heterostruktur-Bipolartransistoren und Elektroabsorptionsmodulatoren auf der Basis eines multifunktionalen Schichtdesigns
    65. Physikertagung und Frühjahrstagung des Arbeitskreises Festkörperphysik der DPG, Hamburg, Germany,
    Hamburg 2001
  • Reimann, Thorsten; Schneider, Marc; Neumann, S.; van Husen, Holger; Stöhr, Andreas; Jäger, Dieter; Tegude, Franz-Josef
    Integration of Heterostructure Bipolartransistors with Electroabsorption Waveguide Modulators and Applications
    11th European Heterostructure Technology Workshop, Padova, Italien, 28. - 30. Oktober 2001,
    Padua 2001
  • Reimann, Thorsten; Schneider, Marc; Velling, Peter; Neumann, S.; Agethen, Michael; Bertenburg, Ralf M.; Heinzelmann, Robert; Stöhr, Andreas; Jäger, Dieter; Tegude, Franz-Josef
    Heterostructure bipolartransistor combining electroabsorption waveguide modulator based on a multifunctional layer design for 1.55µm
    12th IEEE III-V Semiconductor Device Simulation Workshop in combination with the HBT Workshop, Duisburg, Germany, 2000,
    Duisburg 2000
  • Prost, Werner; Velling, Peter; Janßen, Guido; Auer, Uwe; Brennemann, Andreas; Glösekötter, P.; Goser, K.F.; Tegude, Franz-Josef
    Resonant-Tunnelling 3-Terminal Devices for High-Speed Logic Application
    24th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Aegean Sea, Greece, 29.05.2000 - 02.06.2000,
    Aegean Sea, Greece 2000
  • Velling, Peter; Agethen, Michael; Herenda, E.; Prost, Werner; Stolz, W.; Tegude, Franz-Josef
    All Liquid Source Growth of Carbon Doped In0.53Ga0.47As/InP HBT by Means of LP-MOVPE
    8th Europ. Workshop on MOVPE and Rel. Growth Techniques (EW MOVPE), Prag, Czech Republic, 08.06.1999 - 11.06.1999,
    Prag, Czech Republic 1999
  • Prost, Werner; Tegude, Franz-Josef
    Winziger als die Mikro-Elektronik
    Forum Forschung '99, Gerhard-Mercator-Universität Duisburg, 1999,
    Duisburg 1999
  • Janßen, Guido; Auer, Uwe; Brennemann, Andreas; Prost, Werner; Tegude, Franz-Josef
    Manufacturability of III/V Resonant Tunneling Diodes for Logic Circuit Applications
    3rd Workshop on Innovative Circuits and Systems for Nano Electronics (Nano-EL), München, Germany, 05.10.1998 - 06.10.1998,
    1998
  • Velling, Peter; Haase, M.; Agethen, Michael; Janßen, Guido; Prost, Werner; Tegude, Franz-Josef
    3D-Integration of Quantum-Effect Devices (RTD) in HBT's by Means of LP-MOVPE
    7th European Workshop on MOVPE and Rel. Growth Techniques (EW MOVPE), Berlin, Germany, 08.06.1997 - 11.06.1997,
    Berlin, Germany 1997
  • Agethen, Michael; Breder, T.; Reuter, R.; Brockerhoff, Wolfgang; Tegude, Franz-Josef
    A New Optimization Strategy Based on the Theory of Evolution for the RF-Modeling of HFET
    International Workshop on Exp. Based FET Device Modell. & Rel. Nonlin. Circuit Design; Kassel, Germany; 17.07.1997 - 18.07.1997,
    Kassel, Germany 1997
  • Reuter, Ralf; Agethen, Michael; Breder, T.; van Waasen, Stefan; Brockerhoff, Wolfgang; Tegude, Franz-Josef
    A New RF- and Noise Model with Special Emphasis on Impact Ionization for HFET
    Conference and Exhibition on Microwaves, Radio Communication and Electromagnetic Compatibility; MIOP 1997; Sindelfingen, Germany; 22.04.1997 - 24.04.1997,
    Sindelfingen, Germany 1997
  • Braasch, T.; David, G.; Hülsewede, R.; Auer, U.; Tegude, Franz-Josef; Jäger, Dieter
    Frequency and time domain characterization of nonlinear transmission lines using electro-optic probing techniques
    MIOP ´97, Sindelfingen,
    Sindelfingen 1997
  • Prost, Werner; Haase, M.; Velling, Peter; Liu, Q.; Tegude, Franz-Josef
    HR XRD for the Analysis of Ultra-Thin Centro-Symmetric Strained DB-RTD Heterostructures
    European Materials Research Conference (E-MRS), Strasbourg, France, 16.06.1997 - 20.06.1997,
    Strasbourg, France 1997
  • Alles, M.; Auer, Uwe; Tegude, Franz-Josef; Jäger, Dieter
    Millimeterwave Photodetectors
    Conference and Exhibition on Microwaves, Radio Communication and Electromagnetic Compatibility; MIOP 1997; Sindelfingen, Germany; 22.04.1997 - 24.04.1997,
    Sindelfingen, Germany 1997
  • Agethen, Michael; Reuter, Ralf; van Waasen, Stefan; Brockerhoff, Wolfgang; Tegude, Franz-Josef
    Theory of Evolution : New Optimization Strategies for the Modeling of HFET-RF-Noise-Parameters
    Conference and Exhibition on Microwaves, Radio Communication and Electromagnetic Compatibility; MIOP 1997; Sindelfingen, Germany; 22.04.1997 - 24.04.1997,
    Sindelfingen, Germany 1997
  • Daumann, W.; Reuter, R.; Agethen, Michael; Auer, Uwe; Brockerhoff, Wolfgang; Bertenburg, Ralf M.; Tegude, Franz-Josef
    Fabrication and High Frequency Analysis of InAlAs/InGaAs/InP Dual-Gate-HFETs with Special Emphasis to Impact Ionization
    European Heterostructure Technology Workshop (HETECH); Lille, France; 15.09.1996 - 17.09.1996,
    Lille, France 1996
  • Umbach, A.; van Waasen, Stefan; Bach, H.; Bertenburg, Ralf M.; Janßen, Guido; Mekonnen, G.G.; Passenberg, W.; Schlaak, W.; Schramm, C.; Unterbörsch, G.; Wolfram, P.; Tegude, Franz-Josef
    High-Speed Photoreceiver by Monolithic Integration of a Waveguide Fed Photodiode and a GaInAs/AlInAs-HEMT Based Distributed Amplifer
    8th International Conference on InP and Related Materials (IPRM), Schwaebisch Gmuend, Germany, 21.04.1996 - 25.04.1996,
    Schwaebisch Gmuend, Germany 1996
  • Prost, Werner; Auer, Uwe; Janßen, Guido; Reuter, Ralf; Agethen, Michael; Tegude, Franz-Josef
    Merged Heterostructure FET/RTD Combination for (Sub-)Millimeter-Wave Generation
    4th International Workshop on Terahertz Electronics; Erlangen, Germany; 05.09.1996 - 06.09.1996,
    Erlangen, Germany 1996
  • Janßen, G.; Prost, Werner; Reuter, Ralf; Auer, Uwe; Schroeder, W.; Tegude, Franz-Josef
    Modeling the Potential of Novel 3-D Integrated RTD/HFET Frequency Multiplier Circuits
    International Workshop on Millimeterwaves, Orvieto, Italy, 11.04.1996 - 12.04.1996,
    Orvieto, Italy 1996
  • Tegude, Franz-Josef; Lindner, A.; Prost, Werner; Wiersch, A.
    On Carbon Doping of InGaAs for InP Based Heterojunction Bipolar Transistors
    20th European Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Vilnius, Litauen, 19.05.1996 - 22.05.1996,
    Vilnius, Litauen 1996
  • Bertenburg, Ralf M.; Clement, A.; Tegude, Franz-Josef
    40Gb/s optoelektronische Empfänger höchster Empfindlichkeit mit konzentrierten Photo-detektoren und Wanderwellenverstärkern : Designüberlegungen und Entwicklung
    Conference and Exhibition on Microwaves, Radio Communication and Electromagnetic Compatibility (MIOP), Sindelfingen, Germany, 30.05.1995 - 01.06.1995,
    Sindelfingen, Germany 1995
  • Lindner, A.; Prost, Werner; Wiersch, A.; Liu, Q.; Scheffer, F.; Kuphal, E.; Tegude, Franz-Josef
    Carbon-Doping of MOVPE-Grown LT-In0.53Ga0.47As : On the Doping Mechanism and InGaAs/InP HBT Device Characteristics
    European Workshop on MOVPE and Rel. Growth Techniques (EW MOVPE), Gent, Belgium, 25.06.1995 - 28.06.1995',
    Gent, Belgium 1995
  • Reuter, Ralf; van Waasen, Stefan; Peters, D.; Tegude, Franz-Josef
    Ein Temperaturrauschmodell für HFET mit besonderer Berücksichtigung des Einflusses eines Gate-Leckstroms auf das Rauschverhalten
    Conference and Exhibition on Microwaves, Radio Communication and Electromagnetic Compatibility (MIOP), Sindelfingen, Germany, 30.05.1995 - 01.06.1995,
    Sindelfingen, Germany 1995
  • Bertenburg, Ralf M.; Janßen, G.; Heedt, Christian H.; Grzona, P.; Reuter, Ralf; Fritzsche, D.; Tegude, Franz-Josef
    Entwicklung eines optoelektronischen Empfängers nach dem Transimpedanzverstärker-prinzip für Bitraten von 500MB/s bis 2,5GB/s und hoher Empfindlichkeit
    Conference and Exhibition on Microwaves, Radio Communication and Electromagnetic Compatibility (MIOP), Sindelfingen, Germany, 30.05.1995 - 01.06.1995,
    Sindelfingen, Germany 1995
  • Peters, D.; Daumann, W.; Brockerhoff, Wolfgang; Reuter, Ralf; Koenig, E.; Tegude, Franz-Josef
    New Direct Parameter Extraction Technique for Heterojunction Bipolar Transistors Using an Extended Equivalent Circuit
    International Workshop on Semiconductor Characterization, Gaithersburg, USA, 30.01.1995 - 02.02.1995,
    Gaithersburg, USA 1995
  • Ellrodt, P.; Brockerhoff, Wolfgang; Tegude, Franz-Josef
    Simulation of Gate Leakage due to Impact Ionization in InAlAs/InGaAs-HFET
    4th Int. Seminar on Simulation of Devices and Technologies (ISSDT), Kruger Nat. Park, South Africa, 15.11.1995 - 17.11.1995,
    Kruger Nat. Park, South Africa 1995
  • Jäger, Dieter; Zumkley, S.; Wingen, G.; Auer, Uwe; Tegude, Franz-Josef
    40 GHz Vertical Electrooptical Fabry-Perot Modulator with Schottky contacts
    CLEO/EUROPE `94, Amsterdam, Niederlande, 1994,
    1994
  • Redlich, S.; Kremer, R.; Neubauer, A.; Bollig, B.; Liu, Q.; Kubalek, Erich; Tegude, Franz-Josef; Laws, P.; Jäger, Dieter
    InAlAs/InGaAs Heterostrukturen auf InP zur Realisierung optisch steuerbarer Höchstfrequenzleitungen
    9. Treffen des DGKK Arbeitskreises "Epitaxie von III/V-Halbleitern", Duisburg, Dezember 1994,
    1994
  • Mihaila, M.; Heedt, Christian H.; Scheffer, F.; Tegude, Franz-Josef
    Phonon-Induced 1/f Noise in InAlAs/InGaAs HEMTs
    17th International Semiconductor Conference (CAS), Sinaia, Romania, 11.10.1994 - 16.10.1994,
    Sinaia, Romania 1994
  • Lindner, A.; Scheffer, F.; Liu, Q.; Prost, Werner; Tegude, Franz-Josef
    LP-growth and characterization of short-period strained-layer superlattices (SPSLSs) on InP substrates
    5th European Workshop on MOVPE and Rel. Growth Techniques (EW MOVPE), Malmö, Sweden, 02.06.1993 - 04.06.1993,
    Malmö, Sweden 1993
  • Lakner, Hubert; Kubalek, Erich; Kraus, J.; Tegude, Franz-Josef
    High Resolution STEM Analysis of InGaAs/AlGaAs Heterostructures
    10th International Congress on Electron Microscopy, Granada, Spain, 07.09.1992 - 12.09.1992,
    Granada, Spain 1992
  • Kraus, Jörg; Meschede, Herbert; Liu, Q.; Prost, Werner; Tegude, Franz-Josef; Lakner, Hubert; Kubalek, Erich
    InyGa₁₋yAs{plus 45 degree rule}GaAs interface smoothing by GaAs monolayers in highly strained graded superlattice channels (0.2 ≤ y ≤ 0.4) for pseudomorphic AlₓGa₁₋ₓAs{plus 45 degree rule}InyGa₁₋yAs HFET
    7th International Conference on Molecular Beam Epitaxy (MBE), Schwäbisch Gmünd, Germany, 24.08.1992 - 28.08.1992,
    Schwäbisch Gmünd, Germany 1992