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Lotharstr. 55 (LT/ZHO)
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Universitätsprofessor/in em./i.R., Bauelemente der Höchstfrequenz-Elektronik
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Die folgenden Publikationen sind in der Online-Universitätsbibliographie der Universität Duisburg-Essen verzeichnet. Weitere Informationen finden Sie gegebenenfalls auch auf den persönlichen Webseiten der Person.
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Tunneling-Related Leakage Currents in Coaxial GaAs/InGaP Nanowire Heterojunction Bipolar TransistorsIn: Physica Status Solidi (B): Basic Solid State Physics , Jg. 258 2021, Nr. 2, S. 2000395DOI (Open Access)
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A systematic study of Ga- And N-polar GaN nanowire-shell growth by metal organic vapor phase epitaxyIn: CrystEngComm , Jg. 22 2020, Nr. 33, S. 5522 – 5532
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Spatially controlled VLS epitaxy of gallium arsenide nanowires on gallium nitride layersIn: CrystEngComm , Jg. 22 2020, Nr. 7, S. 1239 – 1250
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n-Doped InGaP Nanowire Shells in GaAs/InGaP Core–Shell p–n JunctionsIn: Physica Status Solidi (B): Basic Solid State Physics , Jg. 257 2020, Nr. 2, S. 1900358DOI (Open Access)
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Mask-less MOVPE of arrayed n-GaN nanowires on site- and polarity-controlled AlN/Si templatesIn: CrystEngComm , Jg. 21 2019, Nr. 48, S. 7476 – 7488
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Process Development for Wet-Chemical Surface Functionalization of Gallium Arsenide Based NanowiresIn: Physica Status Solidi (B): Basic Solid State Physics 2019, S. 1800678
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Toward Nanowire HBT : Reverse Current Reduction in Coaxial GaAs/InGaP n(i)p and n(i)pn Core-Multishell NanowiresIn: Physica Status Solidi (A) - Applications and Materials Science , Jg. 216 2019, Nr. 1, S. 1800562
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Germanium Template Assisted Integration of Gallium Arsenide Nanocrystals on Silicon : A Versatile Platform for Modern Optoelectronic MaterialsIn: Advanced Optical Materials , Jg. 6 2018, Nr. 8, 1701329
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Polarity- and Site-Controlled Metal Organic Vapor Phase Epitaxy of 3D-GaN on Si(111)In: Physica Status Solidi (B): Basic Solid State Physics , Jg. 255 2018, Nr. 5, S. 1700485
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Erratum: Electrical characterization and transport model of n-gallium nitride nanowiresIn: Applied Physics Letters (APL) , Jg. 108 2016, Nr. 4, S. 082103
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Modelling of electron beam induced nanowire attractionIn: Journal of Applied Physics , Jg. 119 2016, Nr. 14, S. 145101
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Electrical characterization and transport model of n-gallium nitride nanowiresIn: Applied Physics Letters (APL) , Jg. 107 2015, Nr. 8, S. 082103
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High-Speed GaN/GaInN Nanowire Array Light-Emitting Diode on Silicon(111)In: Nano Letters , Jg. 15 2015, Nr. 4, S. 2318 – 2323
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Nano und Energie ≠ NanoEnergie : Anwendungen von Nanokonzepten in der PhotovoltaikIn: Unikate: Berichte aus Forschung und Lehre 2013, Nr. 43: NanoEnergie : Materialentwicklung für eine nachhaltige Energieversorgung, S. 76 – 87DOI, Online Volltext (Open Access)
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Radiation hardness of graphene and MoS2 field effect devices against swift heavy ion irradiationIn: Journal of Applied Physics , Jg. 113 2013, Nr. 21, S. 214306DOI (Open Access)
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Recombination dynamics in single GaAs-nanowires with an axial heterojunction : N- versus p-doped areasIn: Journal of Applied Physics , Jg. 113 2013, Nr. 17, S. 174303-1 – 174303-5
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Comparison of InAs nanowire conductivity : Influence of growth method and structureIn: Physica Status Solidi (C): Current Topics in Solid State Physics , Jg. 9 2012, Nr. 2, S. 230 – 234
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Direct determination of minority carrier diffusion lengths at axial GaAs nanowire p-n junctionsIn: Nano Letters , Jg. 12 2012, Nr. 3, S. 1453 – 1458
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Far-field imaging for direct visualization of light interferences in GaAs nanowiresIn: Nano Letters , Jg. 12 2012, Nr. 10, S. 5412 – 5417
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N-GaAs/InGaP/p-GaAs core-multishell nanowire diodes for efficient light-to-current conversionIn: Advanced Functional Materials , Jg. 22 2012, Nr. 5, S. 929 – 936
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Scalable electrical properties of axial GaAs nanowire pn-diodesIn: Journal of Electronic Materials (JEM) , Jg. 41 2012, Nr. 5, S. 809 – 812
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A precise optical determination of nanoscale diameters of semiconductor nanowiresIn: Nanotechnology , Jg. 22 2011, Nr. 38, S. 385201
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Axial pn-junctions formed by MOVPE using DEZn and TESn in vaporliquidsolid grown GaAs nanowiresIn: Journal of Crystal Growth , Jg. 315 2011, Nr. 1, S. 143 – 147
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Gold catalyst initiated growth of GaN nanowires by MOCVDIn: Physica Status Solidi (C): Current Topics in Solid State Physics , Jg. 8 2011, Nr. 7-8, S. 2315 – 2317
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ICP-RIE etching of self-aligned InP based HBTs with Cl₂/N ₂ chemistryIn: Microelectronic Engineering , Jg. 88 2011, Nr. 7, S. 1601 – 1605
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Ohmic contacts to n-GaAs nanowiresIn: Journal of Applied Physics , Jg. 110 2011, Nr. 1, S. 014305
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Optical properties of heavily doped GaAs nanowires and electroluminescent nanowire structuresIn: Nanotechnology , Jg. 22 2011, Nr. 8, S. 085702
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Planar-defect characteristics and cross-sections of 〈001〉, 〈111〉, and 〈112〉 InAs nanowiresIn: Journal of Applied Physics , Jg. 109 2011, Nr. 11, S. 114320DOI (Open Access)
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Spatially resolved photoelectric performance of axial GaAs nanowire pn-diodesIn: Nano Research , Jg. 4 2011, Nr. 10, S. 987 – 995
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n-Type doping of vapor–liquid–solid grown GaAs nanowiresIn: Nanoscale Research Letters , Jg. 6 2011, Nr. 1, S. 65DOI (Open Access)
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High-Frequency Measurements on InAs Nanowire Field-Effect Transistors using Coplanar Waveguide ContactsIn: IEEE Transactions on Nanotechnology , Jg. 9 2010, Nr. 4, S. 432 – 437
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InP-Based Unipolar Heterostructure Diode for Vertical Integration, Level Shifting, and Small Signal RectificationIn: IEICE Transactions C: IEICE Transactions on Electronics , Jg. E93-C 2010, Nr. 8, S. 1309 – 1314
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Alignment of semiconductor nanowires using ion beamsIn: Small , Jg. 5 2009, Nr. 22, S. 2576 – 2580
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Controllable p -type doping of GaAs nanowires during vapor-liquid-solid growthIn: Journal of Applied Physics , Jg. 105 2009, Nr. 2, S. 024305
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Material and doping transitions in single GaAs-based nanowires probed by Kelvin probe force microscopyIn: Nanotechnology , Jg. 20 2009, Nr. 38, S. 385702
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P -type doping of GaAs nanowiresIn: Applied Physics Letters (APL) , Jg. 92 2008, Nr. 16, S. 163107
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Surface-recombination-free InGaAs/InP HBTs and the base contact recombinationIn: Solid State Electronics , Jg. 52 2008, Nr. 7, S. 1088 – 1091
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GaAs whiskers grown by metal-organic vapor-phase epitaxy using Fe nanoparticlesIn: Journal of Applied Physics , Jg. 101 2007, Nr. 5, S. 054318
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Growth and characterisation of GaAs/InGaAs/GaAs nanowhiskers on (1 1 1) GaAsIn: Journal of Crystal Growth , Jg. 298 2007, S. 607 – 611
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High performance III/V RTD and PIN diode on a silicon (001) substrateIn: Applied Physics A: Materials Science and Processing , Jg. 87 2007, Nr. 3, S. 539 – 544
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High transconductance MISFET with a single InAs nanowire channelIn: IEEE Electron Device Letters , Jg. 28 2007, Nr. 8, S. 682 – 684
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Sequential mechanism of electron transport in the resonant tunneling diode with thick barriersIn: Semiconductors , Jg. 41 2007, Nr. 2, S. 227 – 231
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A monolithically integrated intensity-independent polarization-sensitive switch operating at 1.3 μm based on ordering in InGaAsPIn: Physica E: Low-Dimensional Systems and Nanostructures , Jg. 32 2006, Nr. 1-2, S. 554 – 557
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Composition Control in MOVPE-Grown InGaAs Nanowhiskers.In: Journal of Applied Physics , Jg. 298 2006, S. 607 – 611
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Composition control in metal-organic vapor-phase epitaxy grown InGaAs nanowhiskersIn: Journal of Applied Physics , Jg. 100 2006, Nr. 7, S. 074321
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Improved structure and performance of the GaAsSb/InP interface in a resonant tunneling diodeIn: Journal of Crystal Growth , Jg. 287 2006, Nr. 2, S. 536 – 540
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Optoelectronic 1:2 demultiplexing based on resonant tunnelling diodes and pin-photodetectorsIn: Electronics Letters , Jg. 42 2006, Nr. 10, S. 599 – 600
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Passivation of InP-based HBTsIn: Applied Surface Science , Jg. 252 2006, Nr. 21, S. 7664 – 7670
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Single InGaAs nanowhiskers characterized by analytical transmission electron microscopyIn: Phase Transitions , Jg. 79 2006, Nr. 9-10, S. 727 – 737
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The effect of collector doping on InP-based double heterojunction bipolar transistors
4th International Conference on Electrical and Electronics Engineering (ELECO), Bursa, Turkey, 07.12.2005 - 11.12.2005,In: Turkish Journal of Electrical Engineering & Computer Sciences , Jg. 14 2006, Nr. 3, S. 429 – 436(Open Access) -
A three-terminal planar selfgating device for nanoelectronic applicationsIn: Solid State Electronics , Jg. 49 2005, Nr. 12, S. 1990 – 1995
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Passivation of InP/GaAsSb/InP double heterostructure bipolar transistors with ultra thin base layer by low-temperature deposited SiNₓIn: Solid State Electronics , Jg. 49 2005, Nr. 3, S. 409 – 412
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Polarisation-sensitive switch : An integrated intensity-independent solution for 1.3 μm based on the polarisation anisotropy of ordered InGaAsPIn: Physica Status Solidi (A): Applications and Materials Science , Jg. 202 2005, Nr. 6, S. 992 – 996
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Comparison of the passivation effects on self- and non-self-aligned InP/InGaAs/InP double heterostructure bipolar transistors by low-temperature deposited SiNₓIn: Journal of Applied Physics , Jg. 96 2004, Nr. 1, S. 777 – 783
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Current gain increase by SiNₓ passivation in self-aligned InGaAs/InP heterostructure bipolar transistor with compositionally graded baseIn: Solid State Electronics , Jg. 48 2004, Nr. 9, S. 1637 – 1641
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Current transport mechanisms and their effects on the performances of InP-based double heterojunction bipolar transistors with different base structuresIn: Applied Physics Letters (APL) , Jg. 84 2004, Nr. 15, S. 2910 – 2912
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Disziplin im Nano-Maßstab : Selbstorganisation in Bottom-up-ProzessenIn: Forum Forschung: Das Forschungsmagazin der Universität Duisburg-Essen 2004, Nr. 2003/2004, S. 88 – 92
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Effects of (NH4)(2)S passivation on the performance of graded-base InGaAs/InP HBTsIn: Physica status solidi A - Applied research , Jg. 201 2004, Nr. 5, S. 1017 – 1021
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Effects of (NH₄)₂S passivation on the performance of graded-base InGaAs/InP HBTsIn: Physica Status Solidi (A): Applications and Materials Science , Jg. 201 2004, Nr. 5, S. 1017 – 1021
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Equivalent circuit of a resonant tunnel InGaAs/InAlAs diode operating at millimetric wavesIn: Journal of Communications Technology and Electronics , Jg. 49 2004, Nr. 7, S. 833 – 838
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Growth and characterization of InAlP/InGaAs double barrier RTDs
12th International Conference on Metalorganic Vapour Phase Epitaxy (MOVPE), Lahaina, Hawaii, USA, 30.05.2004 - 04.06.2004,In: Journal of Crystal Growth , Jg. 272 2004, Nr. 1-4, S. 555 – 558 -
Influence of layer structure on the current-voltage characteristics of Si/SiGe interband tunneling diodesIn: Journal of Applied Physics , Jg. 96 2004, Nr. 7, S. 3848 – 3851
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Photoluminescence of GaAs nanowhiskers grown on Si substrateIn: Applied Physics Letters (APL) , Jg. 85 2004, Nr. 26, S. 6407 – 6408
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Sulfur and low-temperature SiNₓ passivation of self-aligned graded-base InGaAs/InP heterostructure bipolar transistorsIn: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures , Jg. 22 2004, Nr. 3, S. 1060 – 1066DOI (Open Access)
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Surface recombination mechanism in graded-base InGaAs-InP HBTsIn: IEEE Transactions on Electron Devices (T-ED) , Jg. 51 2004, Nr. 6, S. 1044 – 1045
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Circuit and application aspects of tunnelling devices in a MOBILE configurationIn: International Journal of Circuit Theory and Applications , Jg. 31 2003, Nr. 1, S. 83 – 103
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Growth of III/V resonant tunnelling diode on Si substrate with LP-MOVPE
Eleventh International Conference on MOVPE XI; Berlin, Germany; 3 - 7 June 2002,In: Journal of Crystal Growth , Jg. 248 2003, S. 380 – 383 -
Growth of carbon-doped LP-MOVPE InAlAs using non-gaseous sourcesIn: Journal of Crystal Growth , Jg. 248 2003, S. 130 – 133
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MOVPE growth and polarisation dependence of (dis-)ordered InGaAsP PIN diodes for optical fibre applications
Eleventh International Conference on MOVPE XI; Berlin, Germany; 3 - 7 June 2002,In: Journal of Crystal Growth , Jg. 248 2003, S. 158 – 162 -
Two-dimensional physical simulation of InGaAs/InP heterostructure bipolar transistors
6th International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, EXMATEC 2002; Budapest; Hungary; 26 - 29 May 2002,In: Physica Status Solidi (C): Current Topics in Solid State Physics 2003, Nr. 3, S. 922 – 927 -
450 GHz millimetre-wave signal from frequency tripler with heterostructure barrier varactors on gold substrateIn: Electronics Letters , Jg. 38 2002, Nr. 13, S. 657 – 658
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Lithographic Tools for Producing Patterned Films Compsed of Gas Phase Generated Nanocrystals ImpressIn: Material Science and Technology , Jg. 18 2002, Nr. 7, S. 717 – 720
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Low-voltage MOBILE logic module based on Si/SiGe interband tunnelling diodesIn: IEEE Electron Device Letters , Jg. 22 2001, Nr. 5, S. 215 – 217
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Nonlinear Effects in the 1/f Noise of a 2D Electron Gas
9th IFAC Symposium on Large Scale Systems: Theory and Applications 2001, Bucharest, Romania, 18-20 July 2001,In: IFAC Proceedings Volumes , Jg. 34 2001, Nr. 8, S. 319 – 324 -
On the Microscopic Origin of 1/f Noise in Lattice-Matched InAlAs/InGaAs HEMT'sIn: Proceedings of the Romanian Academy Series A: Mathematics Physics Technical Sciences Information Science 2001
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Electro-optical examination of the band structure of ordered InGaAsIn: Applied Physics Letters (APL) , Jg. 76 2000, Nr. 1, S. 88 – 90
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Hooge parameter of InGaAs bulk material and InGaAs 2DEG quantum well structures based on InP substrates
15th Int. Conf. on Noise in Physical Systems and 1/f Fluctuations, Hongkong, 23.08.1999 - 26.08.1999,In: Microelectronics Reliability , Jg. 40 2000, Nr. 11, S. 1911 – 1914 -
InAlAs/InGaAs/InP heterostructures for RTD and HBT device applications grown by LP-MOVPE using non-gaseous sourcesIn: Journal of Crystal Growth , Jg. 221 2000, Nr. 1-4, S. 722 – 729
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Manufacturability and robust design of nanoelectronic logic circuits based on resonant tunnelling diodesIn: International Journal of Circuit Theory and Applications , Jg. 28 2000, Nr. 6, S. 537 – 552
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Metalorganic vapour phase epitaxy growth of InP-based heterojunction bipolar transistors with carbon doped InGaAs base using tertiarybutylarsine and tertiarybutylphosphine in N₂ ambientIn: Japanese Journal of Applied Physics , Jg. 39 2000, Nr. 11, S. 6162 – 6165
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Parallel adder design with reduced circuit complexity using resonant tunneling transistors and threshold logicIn: Analog Integrated Circuits and Signal Processing , Jg. 24 2000, Nr. 1, S. 7 – 25
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Threshold logic circuit design of parallel adders using resonant tunneling devices
11th International Symposium on System-Level Synthesis and Design (ISS'98); Hsinchu, Taiwan; 2 - 4 December 1998,In: IEEE Transactions on Very Large Scale Integration (VLSI) Systems , Jg. 8 2000, Nr. 5, S. 558 – 572 -
Extension of the epitaxial shadow mask MBE technique for the monolithic integration and in situ fabrication of novel device structuresIn: Journal of Crystal Growth , Jg. 201-202 1999, S. 574 – 577
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Strain Relaxation During Heteroepitaxy on Twist-Bonded Thin Gallium Arsenide SubstratesIn: MRS (Materials Research Society) Proceedings , Jg. 535: III-V and IV-IV Materials and Processing Challenges for Highly Integrated Microelectronics and Optoelectronics 1999, S. 45
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The 1/f noise of InP based 2DEG devices and its dependence on mobilityIn: IEEE Transactions on Electron Devices (T-ED) , Jg. 46 1999, Nr. 1, S. 194 – 203
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Fast fabrication of InP-based HBT using a novel coplanar designIn: Electronics Letters , Jg. 34 1998, Nr. 19, S. 1885 – 1886DOI (Open Access)
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HR XRD for the analysis of ultrathin centrosymmetric strained DB-RTD heterostructuresIn: Thin Solid Films , Jg. 319 1998, Nr. 1-2, S. 25 – 28
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InGaP/GaAs hole barrier asymmetry determined by (0 0 2) X-ray reflections and p-type DB-RTD hole transportIn: Journal of Crystal Growth , Jg. 195 1998, Nr. 1-4, S. 117 – 123
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InGaP/GaAs shadow-mask for optoelectronic integration and MBE regrowthIn: Journal of Crystal Growth , Jg. 195 1998, Nr. 1-4, S. 490 – 494
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Monodisperse aerosol particle deposition : Prospects for nanoelectronicsIn: Microelectronic Engineering , Jg. 41-42 1998, S. 535 – 538
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NAND/NOR logic circuit using single InP-based RTBTIn: Electronics Letters , Jg. 34 1998, Nr. 25, S. 2390 – 2392
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27-GHz bandwidth high-speed monolithic integrated optoelectronic photoreceiver consisting of a waveguide fed photodiode and an InAlAs/InGaAs-HFET traveling wave amplifierIn: IEEE Journal of Solid-State Circuits , Jg. 32 1997, Nr. 9, S. 1394 – 1399
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Determination of interface composition in III-V heterojunction devices (HBT and RTD) with atomic resolution using STEM techniques
3rd International Workshop on Expert Evaluation & Control of Compound Semicond. Mat. & Technologies (EXMATEC), Freiburg, Germany, 12.05.1996 - 15.05.1996,In: Materials Science and Engineering B , Jg. 44 1997, Nr. 1-3, S. 52 – 56 -
Investigation of growth temperature dependent GaInP ordering in different crystal planes using X-ray diffraction and photoluminescence
3rd International Workshop on Expert Evaluation & Control of Compound Semicond. Mat. & Technologies (EXMATEC), Freiburg, Germany, 12.05.1996 - 15.05.1996,In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology , Jg. 44 1997, Nr. 1-3, S. 91 – 95 -
Modelling imperfections of epitaxial heterostructures by means of X-ray diffraction analysis
3rd European Symposium on X-Ray Topography and High Resolution Diffraction (X-TOP), 22.04.1996 - 24.04.1996, Parma, Italy,In: Il Nuovo Cimento della Società Italiana di Fisica D , Jg. 19 1997, Nr. 2-4, S. 299 – 304 -
Modelling intermixing of short period strained layer superlattices by means of X-ray diffraction analysis
3rd International Workshop on Expert Evaluation & Control of Compound Semicond. Mat. & Technologies (EXMATEC), Freiburg, Germany, 12.05.1996 - 15.05.1996,In: Materials Science and Engineering B , Jg. 44 1997, Nr. 1-3, S. 87 – 90 -
The role of hydrogen in low-temperature MOVPE growth and carbon doping of In₀.₅₃Ga₀.₄₇As for InP-based HBT
8th International Conference on Metalorganic Vapour Phase Epitaxy (MOVPE) (IC MOVPE), Cardiff, U.K., 09.06.1996 - 13.06.1996,In: Journal of Crystal Growth , Jg. 170 1997, Nr. 1-4, S. 287 – 291 -
A novel 3-D integrated HFET/RTD frequency multiplierIn: IEEE Journal of Selected Topics in Quantum Electronics (J-STQE) , Jg. 2 1996, Nr. 3, S. 650 – 653
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Characterization of hydrogen passivation and carbon self-compensation of highly C-doped GaAs by means of x-ray diffractionIn: Journal of Applied Physics , Jg. 79 1996, Nr. 2, S. 710 – 716
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Growth temperature dependent band alignment at the Ga₀.₅₁In₀.₄₉P to GaAs heterointerfacesIn: Journal of Applied Physics , Jg. 79 1996, Nr. 1, S. 305 – 309
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InAlAs/InGaAs/InP HFET with suppressed impact ionization using dual-gate cascode-devicesIn: IEEE Electron Device Letters , Jg. 17 1996, Nr. 10, S. 488 – 490
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Monolithic pin-HEMT 1.55μm photoreceiver on InP with 27GHz bandwidthIn: Electronics Letters , Jg. 32 1996, Nr. 23, S. 2142 – 2143
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The impact of pseudomorphic AlAs spacer layers on the gate leakage current of InAlAs/InGaAs heterostructure field-effect transistorsIn: Microwave and Optical Technology Letters , Jg. 11 1996, Nr. 3, S. 125 – 128
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A New Noise Model of HFET with Special Emphasis on Gate-LeakageIn: IEEE Electron Device Letters , Jg. 16 1995, Nr. 2, S. 74 – 76
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Determination of CuPt-type ordering in GaInP by means of x-ray diffraction in the skew, symmetric arrangementIn: Applied Physics Letters (APL) , Jg. 67 1995, S. 2807
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Electro-optic probing of RF signals in submicrometre MMIC devicesIn: Electronics Letters , Jg. 31 1995, Nr. 25, S. 2188 – 2189
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Evidence of type-II band alignment at the ordered GaInP to GaAs heterointerfaceIn: Journal of Applied Physics , Jg. 77 1995, Nr. 3, S. 1154 – 1158
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InP-based heterostructure field-effect transistors with high-quality short-period (InAs)₃m/(GaAs)₁m superlattice channel layers
8th Int. Conf. on Molecular Beam Epitaxy (MBE) (IC MBE), Osaka, Japan, 29.08.1994 - 02.09.1994,In: Journal of Crystal Growth , Jg. 150 1995, S. 1225 – 1229 -
Investigation of leakage current behaviour of Schottky gates on InAlAs/InGaAs/InP HFET structures by a 1D modelIn: Solid State Electronics , Jg. 38 1995, Nr. 10, S. 1775 – 1780
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Metalorganic vapor phase epitaxial grown heterointerfaces to GaInP with group-III and group-V exchangeIn: Journal of Crystal Growth , Jg. 146 1995, Nr. 1-4, S. 538 – 543
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Room-temperature deposition of SiNx using ECR-PECVD for III/V semiconductor microelectronics in lift-off techniqueIn: Journal of Non-Crystalline Solids , Jg. 187 1995, S. 334 – 339
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Drastic Reduction of Gate Leakage in InAlAs/InGaAs HEMT’s Using a Pseudomorphic InAlAs Hole Barrier LayerIn: IEEE Transactions on Electron Devices (T-ED) , Jg. 41 1994, Nr. 10, S. 1685 – 1690
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High breakdown voltage InGaAs/lnAIAs HFET using ln₀.₅Ga₀.₅P spacer layerIn: Electronics Letters , Jg. 30 1994, Nr. 2, S. 169 – 170
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Highly strained In₀.₅Ga₀.₅P as wide-gap material on InP substrate for heterojunction field effect transistor applicationIn: Journal of Crystal Growth , Jg. 145 1994, Nr. 1-4, S. 326 – 331
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Low-pressure metalorganic vapour phase epitaxy growth of InAs/GaAs short period superlattices on InP substrates
7th Int. Conf. on Metalorganic Vapour Phase Epitaxy (MOVPE) (IC MOVPE), Yokohama, Japan, 31.05.1994 - 03.06.1994,In: Journal of Crystal Growth , Jg. 145 1994, Nr. 1-4, S. 771 – 777 -
X-ray characterization of very thin GaₓIn₁₋ₓP (x ≈ 0.5) layers grown on InP
Int. Workshop on Expert Evaluation & Control of Compound Semicond. Mat. & Technologies (EXMATEC), Parma, Italy, 18.05.1994 - 20.05.1994,In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology , Jg. 28 1994, Nr. 1-3, S. 188 – 192 -
X-ray diffraction characterization of highly strained InAs and GaAs layers on InP grown by metalorganic vapor-phase epitaxyIn: Journal of Applied Physics , Jg. 75 1994, Nr. 5, S. 2426 – 2433DOI (Open Access)
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Effects of deep levels and Si-doping on GaInP material properties investigated by means of optical methods
European Materials Research Conference (E-MRS), Strasbourg, France, 04.05.1993 - 07.05.1993,In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology , Jg. 21 1993, Nr. 2-3, S. 181 – 184 -
GaAs MSM Photodiode Using the Highly Doped Channel Layer of a Heterostructure MESFETIn: Physica Status Solidi (A): Applications and Materials Science , Jg. 136 1993, Nr. 1, S. K65 – K69
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InyGa1-yAs⧸GaAs interface smoothing by GaAs monolayers in highly strained graded superlattice channels (0.2 ≤ y ≤ 0.4) for pseudomorphic AlxGa1-xAs⧸InyGa1-yAs HFETIn: Journal of Crystal Growth , Jg. 127 1993, Nr. 1-4, S. 589 – 591
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Photoelectrical properties of GaAs MSM photodetektor compatible with pseudomorphic heterostructure MESFETIn: Physica status solidi A: Applications and Materials Science , Jg. 140 1993, Nr. 2, S. K111 – K114
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Analysis of gate leakage on MOVPE grown InAlAs/InGaAs-HFETIn: Microelectronic Engineering , Jg. 19 1992, Nr. 1-4, S. 401 – 404
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Coplanar microwave phase shifter for InP-based MMICsIn: Microelectronic Engineering , Jg. 19 1992, Nr. 1-4, S. 421 – 424
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Numerical analysis of InP-JFET by use of a quasi 2D-modelIn: Microelectronic Engineering , Jg. 19 1992, Nr. 1-4, S. 39 – 42
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On-wafer microwave measurement setup for investigations on hemt's and high tc Superconductors at Cryogenic Temperatures Down to 20 KIn: IEEE Transactions on Microwave Theory and Techniques , Jg. 40 1992, Nr. 12, S. 2325 – 2331
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Characterization of reactive ion etched AlGaAs/GaAs heterostructures by photoluminescence and low temperature Hall measurementsIn: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures , Jg. 9 1991, Nr. 3, S. 1456
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Growth and characterization of AlGaAs/GaAs Bragg reflectors for nonlinear optoelectronic devicesIn: Materials Science and Engineering B: Solid-State Materials for Advanced Technology , Jg. 9 1991, Nr. 1-3, S. 361 – 364
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Traps at interfaces between GaAs n-type LPE layers and different substratesIn: Surface Science , Jg. 132 1983, Nr. 1-3, S. 465 – 468
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Photo-f.e.t. Method : High-Resolution deep-level measurement technique using a m.e.s.f.e.t. structureIn: Electronics Letters , Jg. 16 1980, Nr. 1, S. 22 – 23
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Nonlinear wave propagation along periodic-loaded transmission linesIn: Applied Physics , Jg. 15 1978, Nr. 4, S. 393 – 397
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Frequency locking of a free running resonant tunneling diode oscillator by wireless sub-harmonic injection locking
UCMMT 2017 - UK-Europe-China Workshop on Millimetre-Waves and Terahertz Technologies, 11.-13. September 2017, Liverpool, UK,Liverpool 2017 -
Frequency locking of a free running resonant tunneling diode oscillator by wire-less sub-harmonic injection lockingIn: 10th UK-Europe-China Workshop on Millimetre Waves and Terahertz Technologies, UCMMT 2017 / UCMMT 2017; Liverpool, United Kingdom; 11 - 13 September 2017 2017, S. 8068485
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Modeling of electron beam induced GaAs nanowire attractionIn: Abstractband: MiFuN: Microstructural Functionality at the Nanoscale / International Workshop on Microstructural Functionality at the Nanoscale (MiFuN 2017), 4. - 6. Oktober 2017, Duisburg 2017
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A new temperature noise model of HFET with special emphasis on a gate-leakage current and investigation of the bias dependence of the equivalent noise sourcesIn: 25th European Microwave Conference: Volume 1 / EuMC 1995; Bologna, Italy; 4 September 1995 2015, S. 205 – 210
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Direct calculation of the HBT small-signal equivalent circuit with special emphasize to the feedback capacitanceIn: 25th European Microwave Conference: Volume 2 / EuMC 1995; Bologna, Italy; 4 September 1995 2015, S. 1032 – 1036
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Propagation of Microwaves in MMICs Studied by Time- and Frequency-Domain Electro-Optic Field MappingIn: Optical sensors: part of Advanced photonics ; 27 - 31 July 2014, Barcelona, Spain / Optics InfoBase, 27 - 31 July 2014, Barcelona 2014, S. 190 – 195
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Triple barrier resonant tunneling diodes for microwave signal generation and detectionIn: European Microwave Integrated Circuits Conference 2013 / EuMIC 2013; 6 - 8 Oct. 2013; Nuremberg, Germany 2013, S. 228 – 231
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An InAs nanowire spin transistor with subthreshold slope of 20mV/decIn: 70th Annual Device Research Conference (DRC), 2012 / Annual Device Research Conference, 18 - 20 June 2012, The Pennsylvania State University, University Park, Pennsylvania 2012, S. 79 – 80
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Analysis of terahertz zero bias detectors by using a triple-barrier resonant tunneling diode integrated with a self-complementary bow-tie antennaIn: 70th Annual Device Research Conference (DRC), 2012 / Annual Device Research Conference, 18 - 20 June 2012, The Pennsylvania State University, University Park, Pennsylvania 2012, S. 77 – 78
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III/V Nanowires for electronic and optoelectronic applicationsIn: Nanoparticles from the gas phase: formation, structure, properties / Lorke, Axel (Hrsg.) 2012, S. 357 – 385
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Optimized RTD-HBT VCO design based on large signal transient simulationsIn: International Conference on Indium Phosphide and Related Materials / IPRM 2012; Santa Barbara, United States; 27 - 30 August 2012 2012, S. 32 – 35
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Sensitive high frequency envelope detectors based on triple barrier resonant tunneling diodesIn: International Conference on Indium Phosphide and Related Materials / IPRM 2012; Santa Barbara, United States; 27 - 30 August 2012 2012, S. 36 – 39
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Single GaAs nanowire photovoltaic devices under very high power illuminationIn: International Conference on Indium Phosphide and Related Materials / IPRM 2012; Santa Barbara, United States; 27 - 30 August 2012 2012, S. 253 – 256
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High performance submicron RTD design for mm-wave oscillator applicationsIn: 23rd International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM 2011; May 22 - 26, 2011; Berlin, Germany 2011, S. 133 – 136
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Spatially resolved photovoltaic performance of axial GaAs nanowire pn-diodesIn: 2011 69th Annual Device Research Conference (DRC 2011) / Annual Device Research Conference, Santa Barbara, California, USA, 20 - 22 June 2011 2011, S. 53 – 54
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The optoelectronic performance of axial and radial GaAs nanowire pn-diodesIn: 23rd International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM 2011; May 22 - 26, 2011; Berlin, Germany 2011, S. 276 – 278
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Design of low-power RTD-based-VCOs for Ka-band applicationIn: German Microwave Conference Digest of Papers / GeMiC 2010; Berlin, Germany; 15 - 17 March 2010 2010, S. 39 – 42
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Fabrication and RF performance of InAs Nanowire FETIn: Device Research Conference (DRC), 2010 / Device Research Conference, 21 - 23 June 2010, The University of Notre Dame, Notre Dame, Indiana 2010, S. 279 – 282
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Scalable high-current density RTDs with low series resistanceIn: International Conference on Indium Phosphide & Related Materials (IPRM), 2010: Conference Proceedings / International Conference on Indium Phosphide & Related Materials, May 31, 2010 - June 4, 2010, Takamatsu Symbol Tower, Kagawa, Japan 2010, S. 358 – 361
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Wavelength-selective receiver for simultaneous λ=1.3 μm and λ=1.55 μm RF optical transmissionIn: International Conference on Indium Phosphide & Related Materials: Conference Proceedings / IPRM 2009; Newport Beach, United States; 10 - 14 May 2009 2009, S. 295 – 297
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High frequency characterisation of single inas nanowire field-effect transistorsIn: 20th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM 2008; Versailles, France; 25 - 29 May 2008 2008, S. 4703003
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Large-signal performance of resonant tunnelling diodes in K-Band oscillatorsIn: Proceedings of the 38th European Microwave Conference / EuMC 2008; Amsterdam, Netherlands; 27 - 31 October 2008 2008, S. 1469 – 1472
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Monostable-bistable threshold logic elements in a fully complementary optical receiver circuit for high frequency applicationsIn: 20th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM 2008; Versailles, France; 25 - 29 May 2008 2008, S. 4702921
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INP-hemt-tia with differential optical input using vertical high topology pin-diodesIn: 19th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM '07; 14 - 18 May 2007; Matsue, Japan 2007, S. 107 – 109
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Integrated InGaAs pin-diode on exactly oriented silicon (001) substrate suitable for 10 Gbit/s digital applicationsIn: 20th Annual Meeting of the IEEE Lasers and Electro-Optics Society: Conference Proceedings / LEOS; Lake Buena Vista, United States; 21 - 25 October 2007 2007, S. 180 – 181
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Large-signal analysis and ac modelling of sub-micron resonant tunnelling diodesIn: 2nd European Microwave Integrated Circuits Conference: Conference Proceedings / EuMIC 2007; Munich, Germany; 8 - 12 October 2007 2007, S. 207 – 210
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Modeling the carrier mobility in nanowire channel fetIn: Low-Dimensional Materials: Synthesis, Assembly, Property Scaling and Modeling / MRS Spring Meeting 2007; San Francisco, United States; 9 - 13 April 2007 2007, S. 139 – 144
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Single n-InAs nanowire MIS-field-effect transistor : Experimental and simulation resultsIn: 19th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM '07; 14 - 18 May 2007; Matsue, Japan 2007, S. 392 – 395
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Sub-nanosecond pulse generation using resonant tunneling diodes for impulse radioIn: IEEE International Conference on Ultra-Wideband 2007 / ICUWB; 24 - 27 September 2007; Singapore 2007, S. 354 – 359
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Concept and Development of a New Mobile-Gate with All Optical InputIn: German Microwave Conference / GeMic`06; Karslruhe, Germany; 28.03.2006 - 30.03.2006 2006
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European "synQPSK" project : Toward synchronous optical quadrature phase shift keying with DFB lasersIn: Coherent Optical Technologies and Applications / COTA 2006; Whistler, Canada; 25–30 June 2006 2006, S. CThC4DOI (Open Access)
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Fabrication and electrical characterisation of n-InAs single nanowhisker field-effect transistorsIn: International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM 2006; Princeton; United States; 8 -11 May 2006 2006, S. 436 – 438
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Integrated components for optical QPSK transmissionIn: Frontiers in Optics 2006 / FiO 2006; Rochester, United States; 10 October 2006 2006, S. FMD4
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Low-temperature DC and RF measurement and modelling of InGaAs-InAlAs resonant tunneling diodes down to 15 KIn: Proceedings of the 1st European Microwave Integrated Circuits Conference / EuMIC 2006; Manchester; United Kingdom; 10 - 13 September 2006 2006, S. 344 – 347
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Bias Dependent Boolean Multivalue Logic Application of Resonant Tunneling Bipolar TransistorsIn: Proceedings of the German Microwave Conference / GeMic 2005, Ulm, Germany, 05.04.2005 - 07.04.2005 2005, S. 156 – 159
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Characterisation of GaAs nanowhiskers grown on GaAs and Si substratesIn: 17th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM 2005; Glasgow, Scotland; 8 - 12 May 2005 2005, S. 363 – 366
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Design and modelling of A III/V mobile-gate with optical input on a silicon substrateIn: Conference Proceedings - International Conference on Indium Phosphide and Related Materials / IPRM 2005; Glasgow, Scotland; 8 - 12 May 2005 2005, S. 17 – 20
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Determination of piezo-electric fields in spontaneously ordered InGaAsPIn: 27th International Conference on the Physics of Semiconductors / ICPS-27, Flagstaff, Arizona, 26 - 30 July 2004 2005, S. 119 – 120
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Fabrication of transferred-substrate HBT with simple technologyIn: 17th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM 2005; Glasgow, Scotland; 8 - 12 May 2005 2005, S. 508 – 511
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Optimizing lateral HBT design by utilizing performance estimationsIn: 17th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM 2005; Glasgow, Scotland; 8 - 12 May 2005 2005, S. 441 – 444
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A nanoparticle-coated nanocrystal-gate for an INP-based heterostructure field-effect transistorIn: 16th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM`04; Kagoshima, Japan; 31 May - 4 June 2004 2004, S. 435 – 438
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Buffer optimization for InP-on-si (001) quasi-substratesIn: 16th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM`04; Kagoshima, Japan; 31 May - 4 June 2004 2004, S. 118 – 121
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Investigation of the rf-noise behaviour of InP based DHBT with InGaAs base and GaAsSb baseIn: Noise in Devices and Circuits II / Noise in Devices and Cirquits II, 26 - 28 May 2004, Maspalomas, Spain / Danneville, Francois; Bonani, Fabrizio; Deen, M. Jamal; Levinshtein, Michael E. (Hrsg.) 2004, S. 164 – 172
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Manufacturability and electrical characteristics of Si/SiGe interband tunnelling diodesIn: 5th International Conference on Semiconductor Devices and Microsystmes: Conference Proceedings / ASDAM 2004; Slomenice, Slovakia; 17 - 21 October 2004 2004, S. 29 – 32
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Resonant tunneling diode immedunce dependence analysisIn: Fifth International Kharkov Symposium on Physics and Engineering of Microwaves, Millimeter, and Submillimeter Waves: Symposium Proceedings / MSMW'04; Kharkov, Ukraine; 21 - 26 June 2004 / Kostenko, A.; Nosich, A.I.; Yakovenko, V.F. (Hrsg.) , Jg. 2 2004, S. 566 – 568
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A consistent and scalable PSPICE HFET-model for DC- and S-parameter-simulationIn: IEEE International Conference on Microelectronic Test Structures / ICMTS 2002; Cork, Ireland; 8 - 11 April 2002 2003, S. 67 – 70
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Growth of highly p-type doped GaAsSb : C for HBT applicationIn: International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM`03; Santa Barbara, USA; 12.05.2003 - 16.05.2003 2003, S. 575 – 578
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InP based double heterojunction bipolar transistor with carbon doped GaAsSb : C base grown by LP-MOVPEIn: Proceedings of the 11th European GAAS and Related III-V Compounds Application Symposium / GAAS`03; München, Germany; 06.10.2003 - 10.10.2003 2003, S. 255 – 257
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Mechanism of Current Gain increase of Heterostructure Bipolar Transistors Passivated by Low-Temperature Deposited SiNxIn: Proceedings of the 11th European GAAS and Related III-V Compounds Application Symposium / GAAS`03; München, Germany; 06.10.2003 - 10.10.2003 2003, S. 259 – 262
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Passivation of graded-base InP/InGaAs/InP double heterostructure bipolar transistors by room-temperature deposited SiNₓIn: International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM`03; Santa Barbara, USA; 12.05.2003 - 16.05.2003 2003, S. 156 – 159
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A novel 1.55µm HBT-Electroabsorption modulatorIn: Proceedings of the International Topical Meeting on Microwave Photonics (MWP `01) / MWP `01, 7-9 Jan. 2002, Long Beach, CA, USA 2002, S. 21 – 24
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Asynchronous circuit design based on the RTBT monostable-bistable logic transition element (MOBILE)In: Proceedings of the 15th Symposium on Integrated Circuits and Systems Design / SBCCI 2002; Porto Alegre, Brazil; 9 - 14 September 2002 2002, S. 365 – 370
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Different approaches for integrating HBTs and EAMsIn: The 10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications / EDMO 2002 ; 18 - 19 November; Manchester, UK 2002, S. 149 – 154
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Experimental threshold logic implementations based on resonant tunnelling diodesIn: Proceedings of the 9th IEEE International Conference on Electronics, Circuits, and Systems / ICECS 2002; 15 - 18 September 2002; Dubrovnik, Croatia , Jg. 2 2002, S. 669 – 672
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MOVPE growth and polarisation dependence of (dis-)ordered InGaAsP PIN diodes for optical fibre applicationsIn: 14th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / Stockholm, Sweden; 12 - 16 May 2002 2002, S. 127 – 130
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Monolithically integrated optoelectronic circuits using HBT, EAM, and TEATIn: Proceedings of the International Topical Meeting on Microwave Photonics (MWP 2002) / MWP 2002, November 5-8, Awaji, Japan 2002, S. 349 – 352
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Pseudo dynamic gate design based on the Resonant Tunneling-Bipolar Transistor (RTBT)In: Proceedings of the 32nd European Solid-State Device Research Conference / ESSDERC 2002; Firenze, Italy; 24 - 26 September 2002 / Gnani, E.; Baccarani, G.; Rudan, M. (Hrsg.) 2002, S. 211 – 214
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Waveguide HBT electroabsorption modulators : Devices and circuitsIn: 14th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / Stockholm, Sweden; 12 - 16 May 2002 2002, S. 123 – 126
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Waverguide HBT electroabsorption modulators : devices and circuitsIn: Proceedings of the 14th International Conference on Indium Phosphide and Related Materials (IPRM) / IPRM: May 12-16, 2002, Stockholm, Sweden 2002, S. 123 – 126
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Consistent small-signal and rf-noise parameter modelling of carbon doped InP/InGaAs HBTIn: International IEEE Microwave Symposium Digest / MTT-S 2001; Phoenix, United States; 20 - 25 May 2001 , Jg. 1 2001, S. 1765 – 1768
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InP-based monolithically integrated RTD/HBT MOBILE for logic circuitsIn: 13th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM 2001; Nara, Japan; 14.05.2001 - 18.05.2001 2001, S. 232 – 235
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Integration of heterostructure bipolar transistor and electroabsorption waveguide modulator based on a multifunctional layer design for 1.55μmIn: 13th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM 2001; Nara, Japan; 14.05.2001 - 18.05.2001 2001, S. 440 – 443
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Resonant Tunneling Device Logic : A Circuit Designer's PerspectiveIn: Circuit Paradigm in the 21st Century: ECCTD ’01 ; Proceedings of the 15th European Conference on Circuit Theory ; Helsinki University of Technology, Finland, 28th - 31st August 2001 ; Vol. 1 / European Conference on Circuit Theory and Design (ECCTD) ; 28th - 31st August 2001, Espoo, Finland / Porra, Veikko (Hrsg.) 2001, S. 189 – 192
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Technology of a depth-2 full-adder circuit using the InP RTD/HFET mobileIn: 13th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM 2001; Nara, Japan; 14.05.2001 - 18.05.2001 2001, S. 228 – 231
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Tunnelling diode technologyIn: Proceedings of the 31s International Symposium on Multiple-Valued Logic / 22-24 May 2001; Warsaw, Poland 2001, S. 49 – 58
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Digital circuit design based on the resonant-tunneling-hetero-junction-bipolar-transistorIn: Proceedings of the 13th Symposium on Integrated Circuits and Systems Design / SBCCI 2000; Manaus, Brazil; 18 - 24 September 2000 2000, S. 150 – 155
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High f/sub T/, high current gain InP/InGaAs : C HBT grown by LP-MOVPE with non-gaseous sourcesIn: International Conference on Indium Phosphide and Related Materials: Conference Proceedings / Williamsburg, USA; 14 -18 May 2000 2000, S. 470 – 472
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InP-Based HBT with Graded InGaAlAs Base Layer Grown by LP-MOVPEIn: Proceedings of the European GaAs and other Semiconductor Application Symposium / GAAS AS 2000; Paris, France; 02.10.2000 - 03.10.2000 2000
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LP-MOVPE Growth of Carbon Doped In0.48Ga0.52P/GaAs HBT Using an All-Liquid-Source ConfigurationIn: 26th International Symposium on Compound Semiconductors / ISCS 2000; Berlin, Germany; 22.08.2000 - 26.08.2000 2000
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A monolithically integrated smart pixel based on a photoconductive switch and a n-i-p-i modulatorIn: Conference on Lasers and Electro-Optics / CLEO '99; Baltimore, USA; 23.05.1999 - 28.05.1999 1999
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Consistent physical model for the gate-leakage and breakdown in InAlAs/InGaAs HFET'sIn: Proceedings of the 11th International Conference on Indium Phosphide and Related Materials / IPRM`99; Davos, Switz; 16 -20 May 1999 1999, S. 439 – 442
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Electrical Properties of Discontinuous PbS Nanoparticle Films on MSM and MIM DetectorsIn: Book of abstracts / Second Joint NSF-ESF Symposium on Nanoparticles: Technologies and Applications: Tacoma, Washington, USA, October 10, 1999 / Joint NSF-ESF Symposium on Nanoparticles: Technologies and Applications ; (Tacoma, Wash.) : 1999.10.10 / Pui, David H. (Hrsg.) 1999, S. P4-1 – P4-4
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Hooge parameter of InP-based 2DEG structures and its dependence on channel design and temperatureIn: The seventh van der ziel symposium on quantum 1/f noise and other low frequency fluctuations in electronic devices / 7. Symposium ; St. Louis, Missouri; 7.-8.8.1998 / Handel, P.H.; Chung, A.L. (Hrsg.) 1999, S. 59 – 70DOI (Open Access)
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LP-MOVPE grown GaAs- and InP-based HBTs using all-liquid alternative sourcesIn: Proceedings of the 11th International Conference on Indium Phosphide and Related Materials / IPRM`99; Davos, Switz; 16 -20 May 1999 1999, S. 467 – 470
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Logic circuits with reduced complexity based on devices with higher functionalityIn: Proceedings of the 2nd STW Workshop on Semiconductor Advances for Future Electronics / SAFE 99, Mierlo, Netherlands, 24-25 November 1999 1999, S. 219 – 224
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Novel MOBILE gates with low-power, relaxed parameter sensitivity, and increased driving capabilityIn: Proceedings of the 11th International Conference on Indium Phosphide and Related Materials / IPRM`99; Davos, Switz; 16 -20 May 1999 1999, S. 411 – 414
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Resonant tunneling transistors for threshold logic circuit applicationsIn: Proceedings of the 9th IEEE Great Lakes Symposium on VLSI / GLSVLSI '99; Ann Arbor, USA; 4 - 6 March 1999 1999, S. 344 – 345
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A new concept for a monolithically integrated optoelectronic receiver based on a GaAs-PIN-photodiode and a PJBTIn: Proceedings of the 2nd International Conference on Advanced Semiconductor Devices And Microsystems / ASDAM 1998; Smolenice; Slovakia; 5 -7 October 1998 1998, Nr. October, S. 291 – 294
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A new consistent rf-and noise model with special emphasis on impact ionisation for dual-gate HFET in cascode configurationIn: 28th European Microwave Conference / EuMC 1998; Amsterdam, Netherlands; 5 - 9 October 1998 , Jg. 1 1998, S. 323 – 327
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Analytic simulation of impact ionization in InAlAs/InGaAs HFET'sIn: Proceedings of the 10th International Conference on Indium Phosphide and Related Materials / IPRM`98, Tsukuba, Japan, 11.05.1998 - 15.05.1998 1998, S. 659 – 662
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Distributed Velocity-matched 1.55um InP Travelling-Wave Photodetector for Generation of High Millimeterwave Signal PowerIn: MTT-S International Microwave Symposium and Exhibition / MTT-S International Microwave Symposium and Exhibition, Baltimore, Maryland, 1998 1998, S. 1233 – 1236
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Distributed velocity-matched 1.55 μm InP travelling-wave photodetector for generation of high millimeterwave signal powerIn: Proceedings of the 1998 IEEE MTT-S International Microwave Symposium / MTT-S`98, Baltimore, USA, 07.06.1998 - 12.06.1998 , Jg. 3 1998, S. 1233 – 1236
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InP-based logic gates for low power monolithic optoelectronic circuitsIn: Proceedings of the IEEE International Conference on Electronics, Circuits and Systems / ICECS'98 - Surfing the Waves of Science and Technology; Lisboa, Portugal; 7 - 10 September 1998 , Jg. 3 1998, S. 393 – 396
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Nonlinear RTD Transmission LinesIn: Proceedings of the 5th International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits / INMMC`98; Duisburg, Germany; 01.10.1998 - 02.10.1998 1998, S. 82 – 83
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PIN-PJBT Integration : A New GaAs Based Optoelectronic ReceiverIn: Proceedings of the 28th European Solid State Device Research Conference / ESSDERC`98; Bordeaux, France; 08.09.1998 - 10.09.1998 1998, S. 424 – 427
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Tunnelstrukturen - Grundlagen und BauelementeIn: Nanostrukturen in Halbleitern / Blockseminar am 1. und 2. Oktober 1997 im Rahmen des Graduiertenkollegs "Metrologie in Physik und Technik" der Technischen Universität Braunschweig und der Physikalisch-Technischen Bundesanstalt Braunschweig / Schlachetzki, Andreas (Hrsg.) 1998, S. 19 – 24
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A novel 3-D integrated RTD-HFET frequency multiplierIn: International Conference on Indium Phosphide and Related Materials 1997: Conference Proceedings / IPRM`97; Cape Cod, USA; 11-15 May 1997 1997, S. 373
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High power InAlAs/InGaAs/InP-HFET grown by MOVPEIn: International Conference on Indium Phosphide and Related Materials 1997: Conference Proceedings / IPRM`97; Cape Cod, USA; 11-15 May 1997 1997, S. 24 – 27
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High-Speed Travelling-Wave Photodetectors for Optical Generation of MillimeterwavesIn: Proceedings of the Asia Pacific Microwave Conference / APMC '97, 2-5 Dec. 1997, Hong Kong , Jg. 2 1997, S. 573 – 576
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High-speed Travelling-Wave Photodetectors for Wireless Optical Millimeter Wave TransmissionIn: Proceedings of IEEE International Topical Meeting on Microwave Photonics / MWP '97: from September 3 through 5 at Schloß Hugenpoet, Duisburg/Essen 1997, S. 103 – 106
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High-speed travelling-wave photodetectors for optical generation of millimeter wavesIn: Proceedings of 1997 Asia-Pacific Microwave Conference / APMC´97; Hongkong; 02.12.1997 - 05.12.1997 , Jg. 2 1997, S. 573 – 576
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InAlAs/InGaAs/InP dual-gate-HFET's : New aspects and propertiesIn: International Conference on Indium Phosphide and Related Materials 1997: Conference Proceedings / IPRM`97; Cape Cod, USA; 11-15 May 1997 1997, S. 181 – 184
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Millimeterwave Photodetectors, Microwaves and OptronicsIn: Mikrowellen und Optronik: Kongreßunterlagen / MIOP ’97, 9. Kongreßmesse für Hochfrequenztechnik, Funkkommunikation und elelektromagnetische Verträglichkeit, 22. - 24. April 1997, Sindelfingen, Deutschland 1997
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Novel Monolithic RTD/3-Terminal Device Combinations on s.i. InP for Frequency MultiplicationIn: Proceedings of the State-of-the-Art Program of Compound Semiconductors / SOTAPOCS 1997, Montreal, Canada, 04.05.1997 - 09.05.1997 1997, S. 229 – 241
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Traveling Wave Amplifier for 20Gb/s Optoelectronic Receivers Based on InAlAs/InGaAs/InP-HFETIn: Proceedings of the Conference and Exhibition on Microwaves, Radio Communication and Electromagnetic Compatibility / MIOP 1997; Sindelfingen, Germany; 22.04.1997 - 24.04.1997 1997, S. 264 – 268
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10 Gb/s low-noise transimpedance amplifier for optoelectronic receivers based on InAlAs/InGaAs/InP HEMTsIn: International Symposium on Electron Devices for Microwave and Optoelectronic Applications / EDMO 1996; Leeds, UK; 25 - 26 November 1996 1996, S. 575800
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27 GHz bandwidth high speed monolithic integrated optoelectronic photoreceiver consisting of a waveguide fed photodiode and an InAlAs/InGaAs-HFET-traveling wave amplifierIn: Proceedings of the 18th Annual IEEE Gallium Arsenide Integrated Circuit Symposium / Orlando, USA; 3 - 6 November 1996 1996, S. 258 – 261
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27 GHz bandwidth integrated photoreceiver comprising a waveguide fed photodiode and a GaInAs/AlInAs-HEMT based travelling wave amplifierIn: Proceedings of the 54th Annual Device Research Conference Digest / Santa Barbara, USA; 26-26 June 1996 1996, S. 200 – 201
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Anomalous impact-ionization gate current in high breakdown InP-based HEMT'sIn: Proceedings of the 26th European Solid-State Device Research Conference / ESSDERC 1996; Bologna, Italy; 9 - 11 September 1996 1996, S. 1001 – 1004
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Characterization and analysis of a new gate leakage mechanism at high drain bias in InAlAs/InGaAs heterostructure field-effect transistorsIn: 8th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / Schwaebisch Gmuend, Germany; 21.04.1996 - 25.04.1996 1996, S. 650 – 653
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Design and characterization of integrated probes for millimeter wave applications in scanning probe microscopyIn: Proceedings of the 1996 IEEE MTT-S International Microwave Symposium Digest / San Franscisco, USA; 17 - 21 June 1996 1996, S. 1529 – 1532
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Development of a low-impedance traveling wave amplifier based on InAlAs/InGaAs/InP-HFET for 20 Gb/s optoelectronic receiversIn: 8th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / Schwaebisch Gmuend, Germany; 21.04.1996 - 25.04.1996 1996, S. 642 – 645
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Investigation and modeling of impact ionization with regard to the RF- and noise behaviour of HFETIn: Proceedings of the 1996 IEEE MTT-S International Microwave Symposium Digest / San Franscisco, USA; 17 - 21 June 1996 1996, S. 512178
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Nonlinear effects in the 1/f noise of lattice-matched InAlAs/InGaAs HEMT’sIn: Proceedings of the '6th Quantum 1/f Noise and other Low Frequency Fluctuations in Electronic Devices Symposium / St.Louis, USA; 27.05.1994 - 28.05.1994 1996, S. 127
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On the design and modelling of novel 3-D integrated RTD/HBT device frequency multiplier circuitsIn: Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications / EDMO 1996; Leeds, UK; 25 - 26 November 1996 1996, S. 176 – 181
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On the temperature dependence of the impact ionization in HFET and the corresponding RF- and noise performanceIn: 8th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / Schwaebisch Gmuend, Germany; 21.04.1996 - 25.04.1996 1996, S. 654 – 657
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Ultrafast GaInAs/AlInAs/InP photoreceiver based on waveguide architectureIn: Proceedings of the 22nd European Conference on Optical Communication / ECOC`96; Oslo, Norway; 15 - 19 September 1996 1996, S. 1.133 – 1.136
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Design methodology, measurement and application of MMIC transmission line transformersIn: Proceedings of IEEE MTT-S International Microwave Symposium Digest: Part 1 / Orlando, USA; 16 -20 May 1995 1995, S. 1635 – 1638
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High speed, high gain InP-based heterostructure FETs with high breakdown voltage and low leakageIn: 7th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / Sapporo, Japan; 9 - 13 May 1995 1995, S. 729 – 732
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Impact of pseudomorphic AlAs spacer layers on the gate leakage current of InAlAs/InGaAs heterostructure field-effect transistorsIn: 7th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / Sapporo, Japan; 9 - 13 May 1995 1995, S. 424 – 427
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On the applicability of the transimpedance amplifier concept for 40 Gb/s optoelectronic receivers based on InAlAs/InGaAs heterostructure field effect transistorsIn: Proceedings of ISSE'95 - International Symposium on Signals, Systems and Electronics / 25-27 Oct. 1995; San Francisco, USA 1995, S. 497971
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InAlAs/InGaAs HFET with extremely high device breakdown using an optimized buffer layer structureIn: 6th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / Santa Barbara, USA; 27 - 31 March 1994 1994, S. 443 – 446
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In₀.₅Ga₀.₅ spacer layer for high drain breakdown voltage InGaAs/InAlAs HFET on InP grown by MOVPEIn: 6th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / Santa Barbara, USA; 27 - 31 March 1994 1994, S. 439 – 442
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Low-pressure metallorganic vapor phase epitaxy (LP-MOVPE) growth and characterization of short-period strained-layer superlattices (SPSLSs) on InP substratesIn: Epitaxial Growth Processes / Los Angeles, USA; 26 - 27 January 1994 1994, S. 75 – 83
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Realization of highly strained short period InAs/GaAs superlattices by means of LP-MOVPE growth on InP substratesIn: 6th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / Santa Barbara, USA; 27 - 31 March 1994 1994, S. 579 – 580
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A High Speed MSM-Travelling-Wave Photodetector for InP-Based MMICsIn: Mikrowellen und Optronik: Kongreßunterlagen / MIOP '93, Mikrowellen und Optronik, 7. Kongressmesse für Höchstfrequenztechnik, 25. - 27. Mai 1993, Sindelfingen, Deutschland 1993, S. 271 – 275
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Characterization of Impact-Ionization in InAlAs/InGaAs/InP HEMT Structures using a Novel Photocurrent-Measurement TechniqueIn: Proceedings of the '5th International Conference on InP and Related Materials / IPRM´93; Paris, France; 19.04.1993 - 22.04.1993 1993, S. 243 – 250
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Heterostructures for III-V Microwave Fieldeffect- and BipolartransistorsIn: Proceedings of the '16th International Semiconductor Conference / CAS´93; Sinaia, Romania; 12.10.1993 - 17.10.1993 1993, S. 11 – 18
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Investigation of the High-Frequency Performance of AlGaAs/GaAs HBTs Down to 20KIn: Proceedings of Bipolar/BiCMOS Circuits and Technology Meeting / BCTM´93; Minenapolis, USA; 04.10.1993 - 05.10.1993 1993, S. 32 – 35
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Numerical investigation of leakage current of Schottky contacts on InAlAs/InGaAs/InP heterostructuresIn: Proceedings of the 23rd European Solid State Device Research Conference / ESSDERC '93; Grenoble, France; 13 - 16 September 1993 1993, S. 463 – 466
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Pseudomorphic Ga0.5In0.5P barriers grown by MOVPE for high drain breakdown and low leakage HFET on InPIn: Proceedings of the '20th International Symposium on GaAs and Related Compounds / GaAs RC´93; Freiburg, Germany; 29.08.1993 - 02.09.1993 1993, S. 827 – 828
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RF-Characterization of AlGaAs/GaAs HBT Down to 20KIn: Proceedings of the '20th International Symposium on GaAs and Related Compounds / GaAs RC´93; Freiburg, Germany; 29.08.1993 - 02.09.1993 1993, S. 177 – 182
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Two-dimensional direct electra-optic field mapping in a monolithic integrated GaAs amplifierIn: 23rd European Microwave Conference / EuMA 1993; Madrid, Spain; 6 - 10 September 1993 1993, S. 497 – 499
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Two-dimensional direct electro-optic field mapping in a monolithic integrated GaAs amplifierIn: Proceedings of the 23rd European Microwave Conference (EuMC'93) / EuMC'93, 10. September 1993, Madrid, Spain 1993, S. 497 – 499
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Advances in CPW-design applied to monolithic integrated Ka-band mesfet and HEMT-amplifiers on GaAsIn: 14th Annual IEEE Gallium Arsenide Integrated Circuit Symposium / GaAs IC 1992; Miami Beach, United States; 4 - 7 October 1997 1992, S. 119 – 122
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Analysis of gate leakage on MOVPE grown InAlAs/InGaAs-HFETIn: Proceedings of the 22nd European Solid State Device Research Conference / ESSDERC '92, 14-17 September 1992, Leuven, Belgium 1992, S. 401 – 404
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Coplanar InAlAs/InGaAs/InP microwave delay line with optical controlIn: Proceedings of IEEE Lasers and Electro-Optics Society: Annual Meeting 1992 / LEOS '92: 16-19 Nov. 1992, Boston, MA, USA 1992, S. 684 – 685
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Coplanar microwave phase shifter for InP-based MMICsIn: Proceedings of the 22nd European Solid-State Device Research Conference / ESSDERC 1992; Leuven; Belgium; 14 - 17 September 1992 1992, Nr. 4, S. 421 – 424
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Evidence of oxygen in undoped InAIAs MOVPE layersIn: LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics and Smart Pixels: 4th International Conference on Indium Phosphide and Related Materials / IPRM 1992; Newport, United States; 21 - 24 April 1992 1992, S. 534 – 537
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Extremly low gate leakage InAlAs/InGaAs HEMTIn: Proceedings of the 19th International Symposium on GaAs and Related Compounds / GaAs RC`92; Karuizawa, Japan; 28.09.1992 - 02.10.1992 1992, S. 941 – 942
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Interdigitated electrode and coplanar waveguide InAlAs/InGaAs MSM photodetectors grown by LP MOVPEIn: Proceedings of the Fourth Indium Phosphide and Related Materials Conference / 4th International Conference on Indium Phosphide and Related Materials - IPRM'92, 21.-24. April 1992, Newport, United States 1992, S. 596 – 599
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Numerical analysis of InP-JFET by use of a Quasi 2D-modelIn: Proceedings of the 22nd European Solid State Device Research Conference / ESSDERC '92, 14-17 September 1992, Leuven, Belgium 1992, S. 39 – 42
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On the optimization and reliability of ohmic-And Schottky contacts to InAlAs/InGaAs HFETIn: LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics and Smart Pixels: 4th International Conference on Indium Phosphide and Related Materials / IPRM 1992; Newport, United States; 21 - 24 April 1992 1992, S. 238 – 241
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On-Wafer RF Measurement Setup for the Characterization of HEMT's and High TC Superconductors at Very Low Temperatures Down to 20KIn: Proceedings of IEEE International Microwave Symposium (MTT-S) / Albuquerque, USA; 01.06.1992 - 05.06.1992 1992, S. 1439 – 1442
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RF Investigations on HEMT's at Cryogenic Temperatures Down to 20K using an On-Wafer Microwave Measurement SetupIn: Proceedings of the 22nd European Microwave Conference / EuMC`92; Helsinki, Finland; 24.08.1992 - 27.08.1992 1992, S. 151 – 156
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Low Damage High Selective Dry Etch Process for the Fabrication of GaAs MESFET and AlxGa1-xAs/GaAs HFETIn: Proceedings of the 14th State-of-the-Art Program of Compound Semiconductors / SOTAPOCS´91; Bellcore, USA; 03.05.1991 / Buckley, D.N.; Macrander, A.T. (Hrsg.) 1991, S. 91 – 99
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Material characterisation of InGaAs/InAlAs heterostructure field effect transistors with heavily doped n-type InAlAs donor layerIn: Third International Conference on Indium Phosphide and Related Materials: Conference Proceedings / 3rd International Conference on Indium Phosphide and Related Materials; Cardiff, Wales; 8 - 11 April 1991 1991, S. 284 – 287
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Investigation of Deep Levels at Interfaces by Means of FET-Structures and Optical ExcitationIn: Proceedings of the 11th International Symposium on GaAs and Related Compounds / GaAs RC´84; Biarritz, France; 26.09. - 28.09.1984 1984, S. 305 – 310
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Deep Level Profiles of GaAs Active Layers and their Correlation to Substrate PropertiesIn: Semi-insulating III-V materials: Evian 1982 / Conference on Semi-Insulating III-V Materials 2; 1982.04.19-21; Evian, France 1982, S. 291 – 297
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Deep Level Measurements of Layers on Semi-Insulating GaAs Substrates by Means of the Photofet MethodIn: Semi-Insulating III–V Materials: Nottingham 1980 / Rees, G. J. (Hrsg.) 1980, S. 321 – 328
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High Frequency NoiseIn: Wiley Encyclopedia of Electrical and Electronics Engineering / Webster, John G. (Hrsg.) , Jg. 14 1999, S. 392 – 410
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III-V-Nanowire FET
Symposium on Opto- and Microelectronic Devices and Circuits 2010 (SODC), Berlin, Germany, 04.10.2010 - 07.10.2010,Berlin, Germany 2010 -
Axial doping profile in VLS grown GaAs:Zn nanowires
13th European Workshop on Metalorganic Vapor Phase Epitaxy, 7. – 10. Juni 2009, Ulm, Germany,2009 -
High-Speed Monostable-Bistable Transition Logic Element Gates with Optical Inputs at 1.3µm/1.55µm
XXII Conference on Design of Circuits and Integrated Systems 2007 (DCIS); Sevilla, Spain; 21.11.2007 - 23.11.2007,Sevilla, Spain 2007 -
High Performance III/V RTD and PIN Diodes on a silicon substrate
6th Topical Workshop on Heterostructure Microelectronics, TWHM Awaji Island, Hyogo, Japan, Aug. 22-25, 2005,Awaji Island, Hyogo 2005 -
Optical Sensitivity of a Monolithic Integrated InP PIN-HEMT-HBT Transimpedance Amplifier
European Microwave Workshops and Chort Courses, EuMW`04; Amsterdam, The Netherlands; 11.10.2004 - 15.10.2004,Amsterdam, The Netherlands 2004 -
Study of ohmic contacts and interface layers of carbon doped GaAsSb/InP heterostructures for DHBT application
12th International Conference on Metalorganic Vapour Phase Epitaxy (MOVPE), Lahaina, Hawaii, USA, 30.05.2004 - 04.06.2004,Lahaina, USA 2004 -
Tunneling Diodes for Compact High Speed Circuits
3rd Joint Symposium on Opto- and Microelectronic Devices and Circuits (SODC), Wuhan, China, 21.05.2004 - 30.05.2004,Wuhan, China 2004 -
LP-MOVPE growth for high-speed electronic devices on InP
10th European Workshop on MOVPE and Rel. Growth Techniques (EW MOVPE), Leece, Italy, 08.06.2003 - 11.06.2003,Leece, Italy 2003 -
Multifunctional 1.55µm transistor-electroabsorption-transceiver2003
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RF- and Noise Modeling of Semiconductor Devices based on InP
ITG Fachtagung 2003,2003 -
Scaling of Small-Signal and RF-Noise Parameters with Respect to the Emitter-Area of Single HBT based on InP
14th Workshop on Semiconductor Modeling and Simulation of Electron Devices (MSED), Barcelona, Spain, 16.10.2003 - 17.10.2003,Barcelona, Spain 2003 -
A Consistent PSPICE-Model for InP HBT
13th Workshop on Physical Simulation of Semiconductor Devices (PSSD), Ilkley, West Yorkshire, U.K., 25.03.2002 - 26.03.2002,Ilkley, U.K. 2002 -
Deposition of Gas-Phase Generated PbS Nanocrystals onto Patterned Substrates
7th International Conference on Nanometer-scale Science and Technology (Nano), 21th European Conference on Surface Science (ECOSS) , Malmö, Sweden, 24.06.2005 - 28.06.2002,Malmö, Sweden 2002 -
RF-Simulation of InGaAs/InP Heterostructure Bipolar Transistors
13th Workshop on Physical Simulation of Semiconductor Devices (PSSD), Ilkley, West Yorkshire, U.K., 25.03.2002 - 26.03.2002,Ilkley, U.K. 2002 -
Spontaneous Group III and V Superlattice Ordering in InGaAsP
26th International Conference on the Physics of Semiconductors (ICPS), Edingburgh, U.K., 29.07.2002 - 02.08.2002,Edingburgh, U.K. 2002 -
Spontaneous Group III and V Superlattice Ordering in InGaAsP
International Conference on Signal Processing (ICSP), Beijing, China, 26.08.2002 - 30.08.2002,Beijing, China 2002 -
A Consistent and Scalable PSPICE Compound Semiconductor HFET Model for DC- and S-Parameter Simulation
9th European GaAs and other Semiconductor Application Symposium (GAAS AS), London, U.K., 24.09.2001 - 25.09.2001,London, U.K. 2001 -
A New Consistent and Scalable PSPICE Model for Enhancement and Depletion-Type HFET
11th Conference and Exhibition on Microwaves, Radio Communication and Electromagnetic Compatibility (MIOP), Stuttgart, Germany, 08.05.2001 - 10.05.2001,Stuttgart, Germany 2001 -
Carbon Doped InP/InGaAs HBT : Consistent Small_Signal and RF-Noise Modelling and Characterization
Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Cagliari, Italy, 27.05.2001 - 30.05.2001,Cagliari, Italy 2001 -
Demonstration von Heterostruktur-Bipolartransistoren und Elektroabsorptionsmodulatoren auf der Basis eines multifunktionalen Schichtdesigns
65. Physikertagung und Frühjahrstagung des Arbeitskreises Festkörperphysik der DPG, Hamburg, Germany,Hamburg 2001 -
Integration of Heterostructure Bipolartransistors with Electroabsorption Waveguide Modulators and Applications
11th European Heterostructure Technology Workshop, Padova, Italien, 28. - 30. Oktober 2001,Padua 2001 -
Heterostructure bipolartransistor combining electroabsorption waveguide modulator based on a multifunctional layer design for 1.55µm
12th IEEE III-V Semiconductor Device Simulation Workshop in combination with the HBT Workshop, Duisburg, Germany, 2000,Duisburg 2000 -
Resonant-Tunnelling 3-Terminal Devices for High-Speed Logic Application
24th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Aegean Sea, Greece, 29.05.2000 - 02.06.2000,Aegean Sea, Greece 2000 -
All Liquid Source Growth of Carbon Doped In0.53Ga0.47As/InP HBT by Means of LP-MOVPE
8th Europ. Workshop on MOVPE and Rel. Growth Techniques (EW MOVPE), Prag, Czech Republic, 08.06.1999 - 11.06.1999,Prag, Czech Republic 1999 -
Winziger als die Mikro-Elektronik
Forum Forschung '99, Gerhard-Mercator-Universität Duisburg, 1999,Duisburg 1999 -
Manufacturability of III/V Resonant Tunneling Diodes for Logic Circuit Applications
3rd Workshop on Innovative Circuits and Systems for Nano Electronics (Nano-EL), München, Germany, 05.10.1998 - 06.10.1998,1998 -
3D-Integration of Quantum-Effect Devices (RTD) in HBT's by Means of LP-MOVPE
7th European Workshop on MOVPE and Rel. Growth Techniques (EW MOVPE), Berlin, Germany, 08.06.1997 - 11.06.1997,Berlin, Germany 1997 -
A New Optimization Strategy Based on the Theory of Evolution for the RF-Modeling of HFET
International Workshop on Exp. Based FET Device Modell. & Rel. Nonlin. Circuit Design; Kassel, Germany; 17.07.1997 - 18.07.1997,Kassel, Germany 1997 -
A New RF- and Noise Model with Special Emphasis on Impact Ionization for HFET
Conference and Exhibition on Microwaves, Radio Communication and Electromagnetic Compatibility; MIOP 1997; Sindelfingen, Germany; 22.04.1997 - 24.04.1997,Sindelfingen, Germany 1997 -
Frequency and time domain characterization of nonlinear transmission lines using electro-optic probing techniques
MIOP ´97, Sindelfingen,Sindelfingen 1997 -
HR XRD for the Analysis of Ultra-Thin Centro-Symmetric Strained DB-RTD Heterostructures
European Materials Research Conference (E-MRS), Strasbourg, France, 16.06.1997 - 20.06.1997,Strasbourg, France 1997 -
Millimeterwave Photodetectors
Conference and Exhibition on Microwaves, Radio Communication and Electromagnetic Compatibility; MIOP 1997; Sindelfingen, Germany; 22.04.1997 - 24.04.1997,Sindelfingen, Germany 1997 -
Theory of Evolution : New Optimization Strategies for the Modeling of HFET-RF-Noise-Parameters
Conference and Exhibition on Microwaves, Radio Communication and Electromagnetic Compatibility; MIOP 1997; Sindelfingen, Germany; 22.04.1997 - 24.04.1997,Sindelfingen, Germany 1997 -
Fabrication and High Frequency Analysis of InAlAs/InGaAs/InP Dual-Gate-HFETs with Special Emphasis to Impact Ionization
European Heterostructure Technology Workshop (HETECH); Lille, France; 15.09.1996 - 17.09.1996,Lille, France 1996 -
High-Speed Photoreceiver by Monolithic Integration of a Waveguide Fed Photodiode and a GaInAs/AlInAs-HEMT Based Distributed Amplifer
8th International Conference on InP and Related Materials (IPRM), Schwaebisch Gmuend, Germany, 21.04.1996 - 25.04.1996,Schwaebisch Gmuend, Germany 1996 -
Merged Heterostructure FET/RTD Combination for (Sub-)Millimeter-Wave Generation
4th International Workshop on Terahertz Electronics; Erlangen, Germany; 05.09.1996 - 06.09.1996,Erlangen, Germany 1996 -
Modeling the Potential of Novel 3-D Integrated RTD/HFET Frequency Multiplier Circuits
International Workshop on Millimeterwaves, Orvieto, Italy, 11.04.1996 - 12.04.1996,Orvieto, Italy 1996 -
On Carbon Doping of InGaAs for InP Based Heterojunction Bipolar Transistors
20th European Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Vilnius, Litauen, 19.05.1996 - 22.05.1996,Vilnius, Litauen 1996 -
40Gb/s optoelektronische Empfänger höchster Empfindlichkeit mit konzentrierten Photo-detektoren und Wanderwellenverstärkern : Designüberlegungen und Entwicklung
Conference and Exhibition on Microwaves, Radio Communication and Electromagnetic Compatibility (MIOP), Sindelfingen, Germany, 30.05.1995 - 01.06.1995,Sindelfingen, Germany 1995 -
Carbon-Doping of MOVPE-Grown LT-In0.53Ga0.47As : On the Doping Mechanism and InGaAs/InP HBT Device Characteristics
European Workshop on MOVPE and Rel. Growth Techniques (EW MOVPE), Gent, Belgium, 25.06.1995 - 28.06.1995',Gent, Belgium 1995 -
Ein Temperaturrauschmodell für HFET mit besonderer Berücksichtigung des Einflusses eines Gate-Leckstroms auf das Rauschverhalten
Conference and Exhibition on Microwaves, Radio Communication and Electromagnetic Compatibility (MIOP), Sindelfingen, Germany, 30.05.1995 - 01.06.1995,Sindelfingen, Germany 1995 -
Entwicklung eines optoelektronischen Empfängers nach dem Transimpedanzverstärker-prinzip für Bitraten von 500MB/s bis 2,5GB/s und hoher Empfindlichkeit
Conference and Exhibition on Microwaves, Radio Communication and Electromagnetic Compatibility (MIOP), Sindelfingen, Germany, 30.05.1995 - 01.06.1995,Sindelfingen, Germany 1995 -
New Direct Parameter Extraction Technique for Heterojunction Bipolar Transistors Using an Extended Equivalent Circuit
International Workshop on Semiconductor Characterization, Gaithersburg, USA, 30.01.1995 - 02.02.1995,Gaithersburg, USA 1995 -
Simulation of Gate Leakage due to Impact Ionization in InAlAs/InGaAs-HFET
4th Int. Seminar on Simulation of Devices and Technologies (ISSDT), Kruger Nat. Park, South Africa, 15.11.1995 - 17.11.1995,Kruger Nat. Park, South Africa 1995 -
40 GHz Vertical Electrooptical Fabry-Perot Modulator with Schottky contacts
CLEO/EUROPE `94, Amsterdam, Niederlande, 1994,1994 -
InAlAs/InGaAs Heterostrukturen auf InP zur Realisierung optisch steuerbarer Höchstfrequenzleitungen
9. Treffen des DGKK Arbeitskreises "Epitaxie von III/V-Halbleitern", Duisburg, Dezember 1994,1994 -
Phonon-Induced 1/f Noise in InAlAs/InGaAs HEMTs
17th International Semiconductor Conference (CAS), Sinaia, Romania, 11.10.1994 - 16.10.1994,Sinaia, Romania 1994 -
LP-growth and characterization of short-period strained-layer superlattices (SPSLSs) on InP substrates
5th European Workshop on MOVPE and Rel. Growth Techniques (EW MOVPE), Malmö, Sweden, 02.06.1993 - 04.06.1993,Malmö, Sweden 1993 -
High Resolution STEM Analysis of InGaAs/AlGaAs Heterostructures
10th International Congress on Electron Microscopy, Granada, Spain, 07.09.1992 - 12.09.1992,Granada, Spain 1992 -
InyGa₁₋yAs{plus 45 degree rule}GaAs interface smoothing by GaAs monolayers in highly strained graded superlattice channels (0.2 ≤ y ≤ 0.4) for pseudomorphic AlₓGa₁₋ₓAs{plus 45 degree rule}InyGa₁₋yAs HFET
7th International Conference on Molecular Beam Epitaxy (MBE), Schwäbisch Gmünd, Germany, 24.08.1992 - 28.08.1992,Schwäbisch Gmünd, Germany 1992