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Prof. Dr. Franz-Josef Tegude

Anschrift
Lotharstr. 55 (LT/ZHO)
47057 Duisburg
Raum
LT 207
Telefon
+49 201 183 6845
E-Mail
Franz.Tegude@uni-due.de
Webseite
http://www.hlt.uni-duisburg-essen.de/

Funktionen

  • Universitätsprofessor/in em./i.R., Bauelemente der Höchstfrequenz-Elektronik

Die folgenden Publikationen sind in der Online-Universitätsbibliographie der Universität Duisburg-Essen verzeichnet. Weitere Informationen finden Sie gegebenenfalls auch auf den persönlichen Webseiten der Person.

    Artikel in Zeitschriften

  • Blumberg, Christian; Häuser, Patrick; Wefers, Fabian; Jansen, Dennis; Tegude, Franz-Josef; Weimann, Nils; Prost, Werner
    A systematic study of Ga- And N-polar GaN nanowire-shell growth by metal organic vapor phase epitaxy
    In: CrystEngComm Jg. 22 (2020) Nr. 33, S. 5522 - 5532
    ISSN: 1466-8033
    Online Volltext: dx.doi.org/
  • Blumberg, Christian; Liborius, Lisa; Ackermann, Julia; Tegude, Franz-Josef; Poloczek, Artur; Prost, Werner; Weimann, Nils
    Spatially controlled VLS epitaxy of gallium arsenide nanowires on gallium nitride layers
    In: CrystEngComm Jg. 22 (2020) Nr. 7, S. 1239 - 1250
    ISSN: 1466-8033
    Online Volltext: dx.doi.org/
  • Liborius, Lisa; Bieniek, Jan; Poßberg, Alexander; Tegude, Franz-Josef; Prost, Werner; Poloczek, Artur; Weimann, Nils
    Tunneling-Related Leakage Currents in Coaxial GaAs/InGaP Nanowire Heterojunction Bipolar Transistors
    In: Physica Status Solidi (B): Basic Solid State Physics (2020) in press
    ISSN: 1521-3951; 0370-1972
    Online Volltext: dx.doi.org/ (Open Access)
  • Liborius, Lisa; Bieniek, Jan; Nägelein, Andreas; Tegude, Franz-Josef; Prost, Werner; Hannappel, Thomas; Poloczek, Artur; Weimann, Nils
    n-Doped InGaP Nanowire Shells in GaAs/InGaP Core–Shell p–n Junctions
    In: Physica Status Solidi (B): Basic Solid State Physics Jg. 257 (2020) Nr. 2, S. 1900358
    ISSN: 1521-3951; 0370-1972
    Online Volltext: dx.doi.org/ (Open Access)
  • Blumberg, Christian; Wefers, Fabian; Tegude, Franz-Josef; Weimann, Nils; Prost, Werner
    Mask-less MOVPE of arrayed n-GaN nanowires on site- and polarity-controlled AlN/Si templates
    In: CrystEngComm Jg. 21 (2019) Nr. 48, S. 7476 - 7488
    ISSN: 1466-8033
    Online Volltext: dx.doi.org/
  • Speich, Claudia; Dissinger, Frank; Liborius, Lisa; Hagemann, Ulrich; Waldvogel, Siegfried R.; Tegude, Franz-Josef; Prost, Werner
    Process Development for Wet-Chemical Surface Functionalization of Gallium Arsenide Based Nanowires
    In: Physica Status Solidi (B): Basic Solid State Physics (2019) S. 1800678
    ISSN: 1521-3951; 0370-1972
    Online Volltext: dx.doi.org/
  • Liborius, Lisa; Heyer, Fabian; Arzi, Khaled; Speich, Claudia; Prost, Werner; Tegude, Franz-Josef; Weimann, Nils; Poloczek, Artur
    Toward Nanowire HBT : Reverse Current Reduction in Coaxial GaAs/InGaP n(i)p and n(i)pn Core-Multishell Nanowires
    In: Physica Status Solidi (A): Applications and Materials Science Jg. 216 (2019) Nr. 1, S. 1800562
    ISSN: 1862-6319; 1862-6300
    Online Volltext: dx.doi.org/
  • Schmitt, Sebastian W.; Sarau, George; Speich, Claudia; Döhler, Gottfried H.; Liu, Ziheng; Hao, Xiaojing; Rechberger, Stefanie; Dieker, Christel; Spiecker, Erdmann; Prost, Werner; Tegude, Franz-Josef; Conibeer, Gavin; Green, Martin A.; Christiansen, Silke H.
    Germanium Template Assisted Integration of Gallium Arsenide Nanocrystals on Silicon : A Versatile Platform for Modern Optoelectronic Materials
    In: Advanced Optical Materials Jg. 6 (2018) Nr. 8, S. 1701329
    ISSN: 2195-1071
    Online Volltext: dx.doi.org/
  • Blumberg, Christian; Grosse, Simon; Weimann, Nils; Tegude, Franz-Josef; Prost, Werner
    Polarity- and Site-Controlled Metal Organic Vapor Phase Epitaxy of 3D-GaN on Si(111)
    In: Physica Status Solidi (B): Basic Solid State Physics Jg. 255 (2018) Nr. 5, S. 1700485
    ISSN: 1521-3951; 0370-1972
    Online Volltext: dx.doi.org/
  • Benner, Oliver; Blumberg, Christian; Arzi, Khaled; Poloczek, Artur; Prost, Werner; Tegude, Franz-Josef
    Erratum: “Electrical characterization and transport model of n-gallium nitride nanowires”
    In: Applied Physics Letters Jg. 108 (2016) Nr. 4, S. 049901
    ISSN: 0003-6951; 1077-3118
    Online Volltext: dx.doi.org/
  • Bitzer, Lucas A.; Speich, Claudia; Schäfer, David; Erni, Daniel; Prost, Werner; Tegude, Franz-Josef; Benson, Niels; Schmechel, Roland
    Modelling of electron beam induced nanowire attraction
    In: Journal of Applied Physics Jg. 119 (2016) Nr. 14, S. 145101
    ISSN: 0021-8979; 1089-7550
    Online Volltext: dx.doi.org/
  • Benner, Oliver; Blumberg, Christian; Arzi, Khaled; Poloczek, Artur; Prost, Werner; Tegude, Franz-Josef
    Electrical characterization and transport model of n-gallium nitride nanowires
    In: Applied Physics Letters Jg. 107 (2015) Nr. 8, S. 082103
    ISSN: 0003-6951; 1077-3118
    Online Volltext: dx.doi.org/
  • Köster, Robert; Sager, Daniel; Quitsch, Wolf-Alexander; Pfingsten, Oliver; Poloczek, Artur; Blumenthal, Sarah; Keller, Gregor; Prost, Werner; Bacher, Gerd; Tegude, Franz-Josef
    High-Speed GaN/GaInN nanowire array light-emitting diode on silicon(111)
    In: Nano Letters Jg. 15 (2015) Nr. 4, S. 2318 - 2323
    ISSN: 1530-6992; 1530-6984
    Online Volltext: dx.doi.org/
  • Benson, Niels; Tegude, Franz-Josef
    Nano und Energie ≠ NanoEnergie : Anwendungen von Nanokonzepten in der Photovoltaik
    In: Unikate: Berichte aus Forschung und Lehre (2013) Nr. 43: NanoEnergie : Materialentwicklung für eine nachhaltige Energieversorgung, S. 76 - 87
    ISBN: 978-3-934359-43-7 ISSN: 0944-6060; 1869-3881
    Online Volltext: dx.doi.org/ Online Volltext (Open Access)
  • Ochedowski, Oliver; Marinov, Kolyo; Wilbs, G.; Keller, Gregor; Scheuschner, Nils; Severin, Daniel; Bender, Markus; Maultzsch, Janina; Tegude, Franz-Josef; Schleberger, Marika
    Radiation hardness of graphene and MoS2 field effect devices against swift heavy ion irradiation
    In: Journal of Applied Physics Jg. 113 (2013) Nr. 21, S. 214306
    ISSN: 0021-8979; 1089-7550
    Online Volltext: dx.doi.org/
  • Sager, Daniel; Gutsche, Christoph; Prost, Werner; Tegude, Franz-Josef; Bacher, Gerd
    Recombination dynamics in single GaAs-nanowires with an axial heterojunction: n- versus p-doped areas
    In: Journal of Applied Physics Jg. 113 (2013) Nr. 17, S. 174303-1 - 174303-5
    ISSN: 0021-8979; 1089-7550
    Online Volltext: dx.doi.org/
  • Sladek, Kamil; Winden, Andreas; Wirths, Stephan; Weis, Karl; Blömers, Christian; Gül, Önder; Grap, Thomas; Lenk, Steffi; von der Ahe, Martina; Weirich, Thomas E.; Hardtdegen, Hilde; Lepsa, Mihail Ion; Lysov, Andrey; Li, Zi-An; Prost, Werner; Tegude, Franz-Josef; Lüth, Hans; Schäpers, Thomas; Grützmacher, Detlev
    Comparison of InAs nanowire conductivity : Influence of growth method and structure
    In: Physica Status Solidi (C): Current Topics in Solid State Physics Jg. 9 (2012) Nr. 2, S. 230 - 234
    ISSN: 1862-6351; 1610-1642
    Online Volltext: dx.doi.org/
  • Gutsche, Christoph; Niepelt, Raphael; Gnauck, Martin; Lysov, Andrey; Prost, Werner; Ronning, Carsten; Tegude, Franz-Josef
    Direct determination of minority carrier diffusion lengths at axial GaAs nanowire p-n junctions
    In: Nano Letters Jg. 12 (2012) Nr. 3, S. 1453 - 1458
    ISSN: 1530-6992; 1530-6984
    Online Volltext: dx.doi.org/
  • Grange, Rachel; Brönstrup, Gerald; Kiometzis, Michael; Sergeyev, Anton; Richter, Jessica; Leiterer, Christian; Fritzsche, Wolfgang; Gutsche, Christoph; Lysov, Andrey; Prost, Werner; Tegude, Franz-Josef; Pertsch, Thomas; Tünnermann, Andreas; Christiansen, Silke
    Far-field imaging for direct visualization of light interferences in GaAs nanowires
    In: Nano Letters Jg. 12 (2012) Nr. 10, S. 5412 - 5417
    ISSN: 1530-6992; 1530-6984
    Online Volltext: dx.doi.org/
  • Gutsche, Christoph; Lysov, Andrey; Braam, Daniel; Regolin, Ingo; Keller, Gregor; Li, Zi-An; Geller, Martin Paul; Spasova, Marina; Prost, Werner; Tegude, Franz-Josef
    N-GaAs/InGaP/p-GaAs core-multishell nanowire diodes for efficient light-to-current conversion
    In: Advanced Functional Materials Jg. 22 (2012) Nr. 5, S. 929 - 936
    ISSN: 1616-301X; 1616-3028
    Online Volltext: dx.doi.org/
  • Gutsche, Christof; Lysov, Andrey; Regolin, Ingo; Münstermann, Benjamin; Prost, Werner; Tegude, Franz-Josef
    Scalable electrical properties of axial GaAs nanowire pn-diodes
    In: Journal of Electronic Materials Jg. 41 (2012) Nr. 5, S. 809 - 812
    ISSN: 0361-5235; 1543-186X
    Online Volltext: dx.doi.org/
  • Brönstrup, Gerald; Leiterer, Christian; Jahr, Norbert; Gutsche, Christof; Lysov, Andrey; Regolin, Ingo; Prost, Werner; Tegude, Franz-Josef; Fritzsche, Wolfgang; Christiansen, Silke
    A precise optical determination of nanoscale diameters of semiconductor nanowires
    In: Nanotechnology Jg. 22 (2011) Nr. 38, 1-9, art. no. 385201
    ISSN: 1361-6528; 0957-4484
    Online Volltext: dx.doi.org/
  • Regolin, Ingo; Gutsche, Christoph; Lysov, Andrey; Blekker, Kai; Li, Zi-An; Spasova, Marina; Prost, Werner; Tegude, Franz-Josef
    Axial pn-junctions formed by MOVPE using DEZn and TESn in vapour-liquid-solid grown GaAs nanowires
    In: Journal of Crystal Growth Jg. 315 (2011) Nr. 1, S. 143 - 147
    ISSN: 0022-0248; 1873-5002
    Online Volltext: dx.doi.org/
  • Ahl, Jan-Philipp; Behmenburg, Hannes; Giesen, Ch.; Regolin, Ingo; Prost, Werner; Tegude, Franz-Josef; Radnoczi, György Z.; Pecz, Bela; Kalisch, Holger; Jansen, Rolf H.; Heuken, Michael
    Gold catalyst initiated growth of GaN nanowires by MOCVD
    In: Physica Status Solidi (C): Current Topics in Solid State Physics Jg. 8 (2011) Nr. 7-8, S. 2315 - 2317
    ISSN: 1862-6351; 1610-1634
    Online Volltext: dx.doi.org/
  • Topaloglu, Serkan; Prost, Werner; Tegude, Franz-Josef
    ICP-RIE etching of self-aligned InP based HBTs with Cl2/N2 chemistry
    In: Microelectronic Engineering Jg. 88 (2011) Nr. 7, S. 1601 - 1605
    ISSN: 0167-9317; 1873-5568
    Online Volltext: dx.doi.org/
  • Gutsche, Christof; Lysov, Andrey; Regolin, Ingo; Brodt, A.; Liborius, Lisa; Frohleiks, Julia; Prost, Werner; Tegude, Franz-Josef
    Ohmic contacts to n-GaAs nanowires
    In: Journal of Applied Physics Jg. 110 (2011) Nr. 1, S. 014305
    ISSN: 0021-8979; 1089-7550
    Online Volltext: dx.doi.org/
  • Lysov, Andrey; Offer, Matthias; Gutsche, Christof; Regolin, Ingo; Topaloglu, Serkan; Geller, Martin Paul; Prost, Werner; Tegude, Franz-Josef
    Optical properties of heavily doped GaAs nanowires and electroluminescent nanowire structures
    In: Nanotechnology Jg. 22 (2011) Nr. 8, 1-8, art. no. 085702
    ISSN: 1361-6528; 0957-4484
    Online Volltext: dx.doi.org/
  • Li, Zi-An; Möller, Christina; Migunov, Vadim; Spasova, Marina; Farle, Michael; Lysov, Andrey; Gutsche, Christoph; Regolin, Ingo; Prost, Werner; Tegude, Franz-Josef; Ercius, Peter
    Planar-defect characteristics and cross-sections of <001>, <111>, and <112> InAs nanowires
    In: Journal of Applied Physics Jg. 109 (2011) Nr. 11, S. 114320
    ISSN: 0021-8979; 1089-7550
    Online Volltext: dx.doi.org/
  • Lysov, Andrey; Vinaji, Sasa; Offer, Matthias; Gutsche, Christoph; Regolin, Ingo; Mertin, Wolfgang; Geller, Martin Paul; Prost, Werner; Bacher, Gerd; Tegude, Franz-Josef
    Spatially resolved photoelectric performance of axial GaAs nanowire pn-diodes
    In: Nano Research Jg. 4 (2011) Nr. 10, S. 987 - 995
    ISSN: 1998-0124; 1998-0000
    Online Volltext: dx.doi.org/
  • Gutsche, Christoph; Lysov, Andrey; Regolin, Ingo; Blekker, Kai; Prost, Werner; Tegude, Franz-Josef
    n-Type doping of vapor–liquid–solid grown GaAs nanowires
    In: Nanoscale Research Letters Jg. 6 (2011) Nr. 1, S. 1 - 6
    ISSN: 1931-7573; 1556-276X
    Online Volltext: dx.doi.org/ (Open Access)
  • Blekker, Kai; Münstermann, Benjamin; Matiss, Andreas; Do, Quoc-Thai; Regolin, Ingo; Brockerhoff, Wolfgang; Prost, Werner; Tegude, Franz-Josef
    High-Frequency Measurements on InAs Nanowire Field-Effect Transistors using Coplanar Waveguide Contacts
    In: IEEE Transactions on Nanotechnology Jg. 9 (2010) Nr. 4, S. 432 - 437
    ISSN: 1536-125X
    Online Volltext: dx.doi.org/
  • Prost, Werner; Zhang, Dudu; Münstermann, Benjamin; Feldengut, Tobias; Geitmann, Ralf; Poloczek, Artur; Tegude, Franz-Josef
    InP-Based Unipolar Heterostructure Diode for Vertical Integration, Level Shifting, and Small Signal Rectification
    In: IEICE Transactions on Electronics Jg. Vol. E93-C (2010) Nr. 8, S. 1309 - 1314
    ISSN: 1745-1353
    Online Volltext: dx.doi.org/
  • Borschel, Christian; Niepelt, Raphael; Geburt, Sebastian; Gutsche, Christoph; Regolin, Ingo; Prost, Werner; Tegude, Franz-Josef; Stichtenoth, Daniel; Schwen, Daniel; Ronning, Carsten
    Alignment of Semiconductor Nanowires Using Ion Beams
    In: Small Jg. 5 (2009) Nr. 22, S. 2576 - 2580
    ISSN: 1613-6810; 1613-6829
    Online Volltext: dx.doi.org/
  • Gutsche, Christoph; Regolin, Ingo; Blekker, Kai; Lysov, Andrey; Prost, Werner; Tegude, Franz-Josef
    Controllable p-type doping of GaAs nanowires during vapor-liquid-solid growth
    In: Journal of Applied Physics Jg. 105 (2009) Nr. 2, S. 3065536
    ISSN: 0021-8979; 1089-7550
    Online Volltext: dx.doi.org/
  • Vinaji, Sasa; Lochthofen, André; Mertin, Wolfgang; Regolin, Ingo; Gutsche, Christoph; Prost, Werner; Tegude, Franz-Josef; Bacher, Gerd
    Material and doping transitions in single GaAs-based nanowires probed by Kelvin probe force microscopy
    In: Nanotechnology Jg. 20 (2009) Nr. 38, S. 385702
    ISSN: 1361-6528; 0957-4484
    Online Volltext: dx.doi.org/
  • Stichtenoth, Daniel; Wegener, K.; Gutsche, Christoph; Regolin, Ingo; Tegude, Franz-Josef; Prost, Werner; Seibt, M.; Ronning, Carsten
    P-type doping of GaAs nanowires
    In: Applied Physics Letters Jg. Vol. 92 (2008) Nr. No. 16, S. 2912129
    ISSN: 0003-6951; 1077-3118
  • Jin, Z.; Liu, X.; Prost, Werner; Tegude, Franz-Josef
    Surface-recombination-free InGaAs/InP HBTs and the base contact recombination
    In: Solid-State Electronics Jg. Vol. 52 (2008) Nr. No. 7, S. 1088 - 1091
    ISSN: 0038-1101
  • Regolin, Ingo; Khorenko, Victor; Prost, Werner; Tegude, Franz-Josef; Sudfeld, Daniela; Kästner, Jochen; Dumpich, Günter; Hitzbleck, Klemens; Wiggers, Hartmut
    GaAs whiskers grown by metal-organic vapor-phase epitaxy using Fe nanoparticles
    In: Journal of Applied Physics Jg. Vol. 101 (2007) Nr. No. 5, S. 054318
    ISSN: 0021-8979; 1089-7550
  • Regolin, Ingo; Sudfeld, Daniela; Lüttjohann, S.; Khorenko, Victor; Prost, Werner; Kästner, Jochen; Dumpich, Günter; Meier, Cedrik; Lorke, Axel; Tegude, Franz-Josef
    Growth and Characterisation of GaAs/InGaAs Nanowhiskers on (111) GaAs.
    In: Journal of Chystal Growth Jg. 298 (2007) Nr. January, S. 607 - 611
    ISSN: 0022-0248
    Online Volltext: dx.doi.org/
  • Regolin, Ingo; Sudfeld, Daniela; Lüttjohann, S.; Khorenko, Victor; Prost, Werner; Kästner, J.; Dumpich, Günter; Meier, C.; Lorke, Axel; Tegude, Franz-Josef
    Growth and characterisation of GaAs/InGaAs/GaAs nanowhiskers on (1 1 1) GaAs
    In: Journal of Crystal Growth Jg. Vol. 298 (2007) S. 607 - 611
    ISSN: 0022-0248; 1873-5002
  • Prost, Werner; Khorenko, Victor; Mofor, Augustine-Che; Neumann, Stefan; Poloczek, Artur; Matiss, Andreas; Bakin, A.; Schlachetzki, Andreas; Tegude, Franz-Josef
    High performance III/V RTD and PIN diode on a silicon (001) substrate
    In: Applied Physics A: Materials Science and Porcessing Jg. Vol. 87 (2007) Nr. No. 3, S. 539 - 544
    ISSN: 0947-8396; 1432-0630
  • Do, Quoc-Thai; Blekker, Kai; Regolin, Ingo; Prost, Werner; Tegude, Franz-Josef
    High transconductance MISFET with a single InAs nanowire channel
    In: IEEE Electron Device Letters Jg. Vol. 28 (2007) Nr. No. 8, S. 682 - 684
    ISSN: 0741-3106
  • Alkeev, N. V.; Averin, S. V.; Dorofeev, A. A; Velling, P.; Khorenko, E.; Prost, Werner; Tegude, Franz-Josef
    Sequential mechanism of electron transport in the resonant tunneling diode with thick barriers
    In: Semiconductors Jg. Vol. 41 (2007) Nr. No. 2, S. 227 - 231
    ISSN: 1063-7826; 1090-6479
  • Regolin, Ingo; Khorenko, Victor; Prost, Werner; Tegude, Franz-Josef; Sudfeld, Daniela; Kästner, Jochen; Dumpich, Günter
    Composition Control in MOVPE-Grown InGaAs Nanowhiskers.
    In: Journal of Applied Physics Jg. 298 (2006) S. 607 - 611
    ISSN: 0021-8979; 1089-7550
  • Regolin, Ingo; Khorenko, Victor; Prost, Werner; Tegude, Franz-Josef; Sudfeld, Daniela; Kästner, Jochen; Dumpich, Günter
    Composition control in metal-organic vapor-phase epitaxy grown InGaAs nanowhiskers
    In: Journal of Applied Physics Jg. Vol. 100 (2006) Nr. No. 7, S. 2345046
    ISSN: 0021-8979; 1089-7550
  • Matiss, Andreas; Prost, Werner; Tegude, Franz-Josef
    Optoelectronic 1:2 demultiplexing based on resonant tunnelling diodes and pin-photodetectors
    In: Electronics Letters Jg. Vol. 42 (2006) Nr. No. 10, S. 599 - 600
  • Jin, Z.; Uchida, K.; Nozaki, S.; Prost, Werner; Tegude, Franz-Josef
    Passivation of InP-based HBTs
    In: Applied Surface Science Jg. Vol. 252 (2006) Nr. No. 21, S. 7664 - 7670
    ISSN: 0169-4332
  • Sudfeld, Daniela; Regolin, Ingo; Kästner, J.; Dumpich, Günter; Khorenko, Victor; Prost, Werner; Tegude, Franz-Josef
    Single InGaAs nanowhiskers characterized by analytical transmission electron microscopy
    In: Phase Transitions Jg. Vol. 79 (2006) Nr. No. 9-10, S. 727 - 737
    ISSN: 0141-1594; 1029-0338
  • Topaloglu, Serkan; Driesen, Jörn; Prost, Werner; Tegude, Franz-Josef
    The Effect of Collector Doping on InP-Based Double Heterojunction Bipolar Transistors
    In: Turkish Journal of Electrical Engineering & Computer Sciences Jg. Vol. 14 (2006) Nr. No. 3, S. 429 - 436
    ISSN: 1300-0632; 1303-6203
  • Müller, Thorsten; Lorke, Axel; Do, Q. T.; Tegude, Franz-Josef; Schuh, D.; Wegscheider, Werner
    A three-terminal planar selfgating device for nanoelectronic applications
    In: Solid-State Electronics Jg. 49 (2005) Nr. 12, S. 1990 - 1995
    ISSN: 0038-1101
    Online Volltext
  • Jin, Z.; Neumann, Stefan; Prost, Werner; Tegude, Franz-Josef
    Passivation of InP/GaAsSb/InP double heterostructure bipolar transistors with ultra thin base layer by low-temperature deposited SiNx
    In: Solid-State Electronics Jg. Vol. 49 (2005) Nr. No. 3, S. 409 - 412
    ISSN: 0038-1101
  • Krämer, S.; Neumann, Stefan; Prost, Werner; Tegude, Franz-Josef; Malzer, S.; Döhler, G. H.
    Polarisation-sensitive switch: An integrated intensity-independent solution for 1.3 µm based on the polarisation anisotropy of ordered InGaAsP
    In: Physica status solidi: A - Applications and materials science Jg. Vol. 202 (2005) Nr. No. 6, S. 992 - 996
    ISSN: 1862-6319
  • Jin, Zhi; Neumann, Stefan; Prost, Werner; Tegude, Franz-Josef
    Comparison of the passivation effects on self- and non-self-aligned InP/InGaAs/InP double heterostructure bipolar transistors by low-temperature deposited SiNx
    In: Journal of Applied Physics Jg. 96 (2004) Nr. 1, S. 777 - 783
    ISSN: 0021-8979; 1089-7550
  • Jin, Zhi; Otten, Frank; Reimann, Thorsten; Neumann, Stefan; Prost, Werner; Tegude, Franz-Josef
    Current gain increase by SiNx passivation in self-aligned InGaAs/InP heterostructure bipolar transistor with compositionally graded base
    In: Solid-state electronics Jg. 48 (2004) Nr. 9, S. 1637 - 1641
    ISSN: 0038-1101
  • Jin, Zhi; Prost, Werner; Neumann, Stefan; Tegude, Franz-Josef
    Current transport mechanisms and their effects on the performances of InP-based double heterojunction bipolar transistors with different base structures
    In: Applied physics letters Jg. 84 (2004) Nr. 15, S. 2910 - 2912
    ISSN: 1077-3118
  • Jin, Zhi; Neumann, Stefan; Prost, Werner; Tegude, Franz-Josef
    Effects of (NH4)(2)S passivation on the performance of graded-base InGaAs/InP HBTs
    In: Physica status solidi A - Applied research Jg. 201 (2004) Nr. 5, S. 1017 - 1021
    ISSN: 1521-396X
  • Neumann, Stefan; Velling, Peter; Prost, Werner; Tegude, Franz-Josef
    Growth and characterization of InAlP/InGaAs double barrier RTDs
    In: Journal of Crystal Growth Jg. 272 (2004) Nr. 1 - 4, S. 555 - 558
    ISSN: 0022-0248; 1873-5002
  • Khorenko, E.; Prost, Werner; Tegude, Franz-Josef; Stoffel, M.; Duschl, R.; Dashiell, M. W.; Schmidt, O. G.
    Influence of layer structure on the current-voltage characteristics of Si/SiGe interband tunneling diodes
    In: Journal of Applied Physics Jg. 96 (2004) Nr. 7, S. 3848 - 3851
    ISSN: 0021-8979; 1089-7550
  • Khorenko, Victor; Regolin, Ingo; Neumann, Stefan; Prost, Werner; Tegude, Franz-Josef; Wiggers, Hartmut
    Photoluminescence of GaAs nanowhiskers grown on Si substrate
    In: Applied physics letters Jg. 85 (2004) Nr. 26, S. 6407 - 6408
    ISSN: 1077-3118
  • Jin, Zhi; Neumann, Stefan; Prost, Werner; Tegude, Franz-Josef
    Sulfur and low-temperature SiNx passivation of self-aligned graded-base InGaAs/InP heterostructure bipolar transistors
    In: Journal of vacuum science & technology B Jg. 22 (2004) Nr. 3, S. 1060 - 1066
    ISSN: 0734-211X
  • Jin, Zhi; Neumann, Stefan; Prost, Werner; Tegude, Franz-Josef
    Surface recombination mechanism in graded-base InGaAs-InP HBTs
    In: IEEE transactions on electron devices Jg. 51 (2004) Nr. 6, S. 1044 - 1045
    ISSN: 0018-9383
  • Glösekötter, Peter; Pacha, Christian; Goser, Karl F.; Prost, Werner; Kim, Samuel; Husen, van, Holger; Reimann, Thorsten; Tegude, Franz-Josef
    Circuit and application aspects of tunnelling devices in a MOBILE configuration
    In: International journal of circuit theory and applications Jg. 31 (2003) Nr. 1, S. 83 - 103
    ISSN: 1097-007X
  • Neumann, Stefan; Bakin, Andrey; Velling, Peter; Prost, Werner; Wehmann, Hergo-Heinrich; Schlachetzki, Andreas; Tegude, Franz-Josef
    Growth of III/V resonant tunnelling diode on Si substrate with LP-MOVPE
    In: Journal of Crystal Growth Jg. 248 (2003) S. 380 - 383
    ISSN: 0022-0248; 1873-5002
  • Neumann, Stefan; Prost, Werner; Tegude, Franz-Josef
    Growth of carbon-doped LP-MOVPE InAlAs using non-gaseous sources
    In: Jpurnal of crystal growth Jg. 248 (2003) S. 130 - 133
    ISSN: 0022-0248
  • Neumann, Stefan; Spieler, Jochen; Blache, Robert; Kiesel, Peter; Döhler, Gottfried H.; Prost, Werner; Tegude, Franz-Josef
    MOVPE growth and polarisation dependence of (dis-)ordered InGaAsP PIN diodes for optical fibre applications
    In: Journal of Crystal Growth Jg. 248 (2003) S. 158 - 162
    ISSN: 0022-0248; 1873-5002
  • Otten, Frank; Auer, U.; Kruis, Frank Einar; Prost, Werner; Tegude, Franz-Josef; Fissan, Heinz
    Lithographic Tools for Producing Patterned Films Compsed of Gas Phase Generated Nanocrystals Impress
    In: Material Science and Technology Jg. 18 (2002) Nr. 7, S. 717 - 720
    ISSN: 1743-2847; 0267-0836
    Online Volltext: dx.doi.org/
  • Otten, F.; Auer, U.; Kruis, Frank Einar; Prost, Werner; Tegude, Franz-Josef; Fissan, Heinz
    Lithographic tools for producing patterned films composed of gas phase generated nanocrystals
    In: MATERIALS SCIENCE AND TECHNOLOGY Jg. Vol. 18 (2002) Nr. Heft 7, S. 717 - 720
    ISSN: 0267-0836
  • Otten, W.; Glösekötter, Peter; Velling, Peter; Brennemann, A.; Prost, Werner; Goser, Karl F.; Tegude, Franz-Josef
    InP-based monolithically integrated RTD/HBT Mobile for logic circuits
    In: IEEE International Conference on Indium Phosphide and Related Materials. 13th IPRM Proceedings (2001) S. 232 - 235
  • Auer, U.; Prost, Werner; Tegude, Franz-Josef; Duschl, R.; Eberl, K.; Agethen, F.J.
    Low-voltage MOBILE logic module based on Si/SiGe interband tunnelling diodes
    In: IEEE ELECTRON DEVICE LETTERS Jg. Vol. 22 (2001) Nr. Heft 5, S. 215 - 217
    ISSN: 0193-8576; 0741-3106
    Online Volltext
  • Pacha, Christian; Prost, Werner; Tegude, Franz-Josef; Thewes, R.; Goser, Karl F.
    Resonant tunneling device Logic: a circuit designer's perspective
    In: European Conference on Circuit Theory and Design (ECCTD '01) (2001)
  • Prost, Werner; Auer, U.; Degenhardt, J.; Brennemann, A.; Pacha, Christian; Goser, Karl F.; Tegude, Franz-Josef
    Technology of a depth-2 full-adder circuit using the InP RTD/HFET MOBILE
    In: IEEE International Conference on Indium Phosphide and Related Materials. 13th IPRM Proceedings (2001) S. 228 - 231
  • Prost, Werner; Auer, U.; Tegude, Franz-Josef; Pacha, Christian; Goser, Karl F.; Duschl, R.; Eberl, K.; Schmidt, O. G.
    Tunnelling diode technology
    In: 31st IEEE International Symposium on Multiple-Valued Logic (ISMVL 2001). Proceedings (2001) S. 49 - 58
  • Spieler, J.; Kippenbreg, T.; Krauß, J.; Kiesel, P.; Döhler, G. H.; Prost, Werner; Velling, P.; Tegude, Franz-Josef
    Electro-optical examination of the band structure of ordered InGaAs
    In: Applied physics letters Jg. Vol. 76 (2000) Nr. Heft 1, S. 88 - 90
    ISSN: 0003-6951
    Online Volltext
  • Velling, P.; Agethen, M.; Prost, Werner; Tegude, Franz-Josef
    InAlAs/InGaAs/InP heterostructures for RTD and HBT device applications grown by LP-MOVPE using non-gaseous sources
    In: Journal of Crystal Growth Jg. Vol. 221 (2000) Nr. Issue 4, S. 722 - 729
    ISSN: 0022-0248; 1873-5002
  • Prost, Werner; Auer, U.; Tegude, Franz-Josef; Pacha, C.; Goser, K. F.; Janßen, G.; van der Roer, T.
    Manufacturability and robust design of nanoelectronic logic circuits based on resonant tunnelling diodes
    In: International journal of circuit theory and applications Jg. Vol. 28 (2000) Nr. Heft 6, S. 537 - 552
    ISSN: 0098-9886
    Online Volltext
  • Keiper, D.; Velling, P.; Prost, Werner; Agethen, M.; Tegude, Franz-Josef; Landgren, G.
    Metalorganic vapour phase epitaxy growth of InP-based heterojunction bipolar transistors with carbon doped InGaAs base using tertiarybutylarsine and tertiarybutylphosphine in N-2 ambient
    In: Japanese journal of applied physics : JJAP, Part 1, Regular papers, brief communications & review papers Jg. Vol. 39 (2000) Nr. Heft 11, S. 6162 - 6165
    ISSN: 0021-4922
    Online Volltext
  • Pacha, C.; Kessler, O.; Glösekötter, P.; Goser, K. F.; Prost, Werner; Brennemann, A.; Auer, U.; Tegude, Franz-Josef
    Parallel Adder Design with Reduced Circuit Complexity Using Resonant Tunneling Transistors and Threshold Logic
    In: Analog integrated circuits and signal processing: an international journal Jg. Vol. 24 (2000) Nr. Heft 1, S. 7 - 25
    ISSN: 0925-1030
    Online Volltext
  • Pacha, C.; Auer, U.; Burwick, C.; Glösekötter, P.; Brennemann, A.; Prost, Werner; Tegude, Franz-Josef; Goser, K. F.
    Threshold logic circuit design of parallel adders using resonant tunneling devices
    In: IEEE transactions on very large scale integration (VLSI) systems : a joint publication of the IEEE Circuits and Systems Society, the IEEE Computer Society, the IEEE Solid-State Circuits Council Jg. Vol. 8 (2000) Nr. Heft 5, S. 558 - 572
    ISSN: 1063-8210
    Online Volltext
  • Prost, Werner; Kruis, Frank Einar; Otten, Frank; Nielsch, Kornelius; Rellinghaus, Bernd; Auer, U.; Peled, A.; Wassermann, Eberhard; Fissan, Heinz; Tegude, Franz-Josef
    Monodisperse aerosol particle deposition : prospects for nanoelectronics
    In: Microelectronic Engineering Jg. 41-42 (1998) S. 535 - 538
    ISSN: 0167-9317; 1873-5568
    Online Volltext: dx.doi.org/
  • David, G.; Bussek, P.; Auer, Uwe; Tegude, Franz-Josef; Jäger, Dieter
    Electro-optic probing of RF signals in submicrometre MMIC devices
    In: Electronics Letters Jg. 31 (1995) Nr. 25, S. 2188 - 2189
    ISSN: 0013-5194; 1350-911X
    Online Volltext: dx.doi.org/
  • Porges, M.; Lalinsky, Tibor; Safrankova, Jaroslava; Hudek, Peter; Kraus, Jörg; Tegude, Franz-Josef; von Wendorff, W.C.; Jäger, Dieter
    GaAs MSM Photodiode Using the Highly Doped Channel Layer of a Heterostructure MESFET
    In: Physica status solidi A: applications and materials science Jg. 136 (1993) Nr. 1, S. K65 - K69
    ISSN: 0031-8965; 1862-6300
    Online Volltext: dx.doi.org/
  • Safrankova, J.; Porges, M.; Lalinsky, T.; Mozolova, Z.; Hudek, P.; Kostic, I.; Kraus, J.; von Wendorff, W.C.; Tegude, Franz-Josef; Jäger, Dieter
    Photoelectrical properties of GaAs MSM photodetektor compatible with pseudomorphic heterostructure MESFET
    In: Physica status solidi A: applications and materials science Jg. 140 (1993) Nr. 2, S. K111 - K114
    ISSN: 0031-8965; 1862-6300
    Online Volltext: dx.doi.org/
  • Scheffer, F.; Joseph, M.; Prost, Werner; Tegude, Franz-Josef; Lackner, H.; Zumkley, S.; Wingen, G.; Jäger, Dieter
    Growth and characterization of AlGaAs/GaAs Bragg reflectors for nonlinear optoelectronic devices
    In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology Jg. 9 (1991) Nr. 1-3, S. 361 - 364
    ISSN: 1873-4944; 0921-5107
    Online Volltext: dx.doi.org/
  • Baston, J.; Tegude, Franz-Josef; Heime, Klaus
    Traps at interfaces between GaAs n-type LPE layers and different substrates
    In: Surface Science Jg. 132 (1983) Nr. 1-3, S. 465 - 468
    ISSN: 0039-6028; 1879-2758
    Online Volltext: dx.doi.org/
  • Tegude, Franz-Josef; Heime, Klaus
    Photo-f.e.t. Method : High-Resolution deep-level measurement technique using a m.e.s.f.e.t. structure
    In: Electronics Letters Jg. 16 (1980) Nr. 1, S. 22 - 23
    ISSN: 0013-5194; 1350-911X
    Online Volltext: dx.doi.org/
  • Jäger, Dieter; Tegude, Franz-Josef
    Nonlinear wave propagation along periodic-loaded transmission lines
    In: Applied Physics Jg. 15 (1978) Nr. 4, S. 393 - 397
    ISSN: 0947-8396; 1432-0630
    Online Volltext: dx.doi.org/ Online Volltext

    • Aufsätze

  • Arzi, Khaled; Keller, G.; Rennings, Andreas; Erni, Daniel; Tegude, Franz-Josef; Prost, Werner;
    Frequency locking of a free running resonant tunneling diode oscillator by wireless sub-harmonic injection locking
    UCMMT 2017 - UK-Europe-China Workshop on Millimetre-Waves and Terahertz Technologies, 11.-13. September 2017, Liverpool, UK,
    Liverpool (2017)
    Online Volltext

    • Beiträge in Sammelwerken und Tagungsbänden

  • Arzi, Khaled; Keller, Gregor; Rennings, Andreas; Erni, Daniel; Tegude, Franz-Josef; Prost, Werner
    Frequency locking of a free running resonant tunneling diode oscillator by wire-less sub-harmonic injection locking
    In: 10th UK-Europe-China Workshop on Millimetre Waves and Terahertz Technologies, UCMMT 2017 / UCMMT 2017; Liverpool; United Kingdom; 11 September 2017 through 13 September 2017 / 2017, S. 8068485
    ISBN: 9781538627204
    Online Volltext: dx.doi.org/
  • Benson, Niels; Bitzer, Lucas A.; Speich, Claudia; Schäfer, David; Erni, Daniel; Prost, Werner; Tegude, Franz-Josef; Schmechel, Roland (Hrsg.)
    Modeling of electron beam induced GaAs nanowire attraction
    In: Abstractband: MiFuN: Microstructural Functionality at the Nanoscale / International Workshop on Microstructural Functionality at the Nanoscale (MiFuN 2017), 4. - 6. Oktober 2017, Duisburg / 2017
    Online Volltext
  • Keller, Gregor; Tchegho, Anselme; Munstermann, Benjamin; Prost, Werner; Tegude, Franz-Josef; Suhara, Michihiko
    Characterization and modeling of zero bias RF-detection diodes based on triple barrier resonant tunneling structures
    In: International Conference on Indium Phosphide and Related Materials (IPRM), 2013 / International Conference on Indium Phosphide and Related Materials (IPRM), 2013 : 19 - 23 May 2013, Kobe, Japan / 2013
    ISBN: 9781467361309; 978-1-4673-6131-6; 978-1-4673-6132-3 ISSN: 1092-8669
    Online Volltext: dx.doi.org/
  • Tegude, Franz-Josef
    III-V-Semiconductor nanowires for the fabrication of optoelectronic and electronic devices
    In: 71st Annual Device Research Conference (DRC), 2013 / 71st Annual Device Research Conference (DRC), 2013 : 23 - 26 June 2013, The University of Notre Dame, Notre Dame / 2013, S. 11
    ISBN: 978-1-4799-0813-4; 9781479908110; 978-1-4799-0814-1
    Online Volltext: dx.doi.org/
  • Benner, O.; Lysov, A.; Gutsche, C.; Keller, G.; Schmidt, C.; Prost, Werner; Tegude, Franz-Josef
    Junction field-effect transistor based on GaAs core-shell nanowires
    In: International Conference on Indium Phosphide and Related Materials (IPRM), 2013 / International Conference on Indium Phosphide and Related Materials (IPRM), 2013 : 19 - 23 May 2013, Kobe, Japan / 2013
    ISBN: 978-1-4673-6130-9; 978-1-4673-6131-6 ISSN: 1092-8669
    Online Volltext: dx.doi.org/
  • Keller, Gregor; Tchegho, Anselme; Münstermann, Benjamin; Prost, Werner; Tegude, Franz-Josef; Suhara, Michihiko
    Triple barrier resonant tunneling diodes for microwave signal generation and detection
    In: European Microwave Integrated Circuits Conference (EuMIC), 2013 / European Microwave Integrated Circuits Conference (EuMIC), 2013 : 6 - 8 Oct. 2013, Nuremberg, Germany / 2013
    ISBN: 978-1-4799-0266-8; 978-2-87487-032-3
  • Yoh, Kanji; Cui, Z.; Konishi, K.; Ohno, M.; Blekker, K.; Prost, Werner; Tegude, Franz-Josef; Harmand, J.-C.
    An InAs nanowire spin transistor with subthreshold slope of 20mV/dec
    In: 70th Annual Device Research Conference (DRC), 2012 / Annual Device Research Conference, 18 - 20 June 2012, The Pennsylvania State University, University Park, Pennsylvania / 2012, S. 79 - 80
    ISBN: 978-1-4673-1163-2; 978-1-4673-1161-8; 978-1-4673-1164-9 ISSN: 1548-3770
    Online Volltext: dx.doi.org/
  • Suhara, Michihiko; Takahagi, Satoshi; Asakawa, Kiyoto; Okazaki, Toshimichi; Nakamura, Masahito; Yamashita, Shin; Itagaki, Yosuke; Saito, Mitsufumi; Tchegho, Anselme; Keller, Gregor; Poloczek, Artur; Prost, Werner; Tegude, Franz-Josef
    Analysis of terahertz zero bias detectors by using a triple-barrier resonant tunneling diode integrated with a self-complementary bow-tie antenna
    In: 70th Annual Device Research Conference (DRC), 2012 / Annual Device Research Conference, 18 - 20 June 2012, The Pennsylvania State University, University Park, Pennsylvania / 2012, S. 77 - 78
    ISBN: 978-1-4673-1163-2; 978-1-4673-1161-8; 978-1-4673-1164-9 ISSN: 1548-3770
    Online Volltext: dx.doi.org/
  • Gutsche, Christoph; Regolin, Ingo; Lysov, Andrey; Blekker, Kai; Do, Quoc-Thai; Prost, Werner; Tegude, Franz-Josef
    III/V Nanowires for electronic and optoelectronic applications
    In: Nanoparticles from the gas phase: formation, structure, properties / Lorke, Axel (Hrsg.), 2012, S. 357 - 385
    ISBN: 978-3-642-28545-5; 978-3-642-28546-2
    Online Volltext: dx.doi.org/
  • Grange, Rachel; Brönstrup, Gerald; Sergeyev, Anton; Richter, Jessica; Pertsch, Thomas; Tünnermann, Andreas; Christiansen, Silke; Leiterer, Christian; Fritzsche, Wolfgang; Gutsche, Christoph; Lysov, Andrey; Prost, Werner; Tegude, Franz-Josef
    Imaging of waveguiding and scattering interferences in individual GaAs nanowires via second-harmonic generation
    In: Nanophotonics IV / Andrews, David L.; Nanophotonics, 15 - 19 April 2012, Brussels, Belgium / 2012
    ISBN: 978-0-8194-9116-9 ISSN: 0277-786X
    Online Volltext: dx.doi.org/
  • Münstermann, Benjamin; Tchegho, Anselme; Keller, Gregor; Tegude, Franz-Josef
    Optimized RTD-HBT VCO design based on large signal transient simulations
    In: International Conference on Indium Phosphide and Related Materials (IPRM), 2012 / International Conference on Indium Phosphide and Related Materials, 27 - 30 Aug. 2012, Santa Barbara, CA / 2012
    ISBN: 978-1-4673-1724-5; 978-1-4673-1725-2
    Online Volltext: dx.doi.org/
  • Tegude, Franz-Josef; Prost, Werner; Bentham Science Publisher, Bentham Science Publisher
    Semiconductor Nanowire Transistors
    In: Advances in III-V Semiconductor Nanowires and Nanodevices / Wang, Deli; Li, Jianye (Hrsg.), 2012, S. 129 - 144
    ISBN: 978-1-60805-415-2; 978-1-60805-052-9
    Online Volltext: dx.doi.org/
  • Keller, Gregor; Tchegho, Anselme; Münstermann, Benjamin; Prost, Werner; Tegude, Franz-Josef
    Sensitive high frequency envelope detectors based on triple barrier resonant tunneling diodes
    In: International Conference on Indium Phosphide and Related Materials (IPRM), 2012 / International Conference on Indium Phosphide and Related Materials, 27 - 30 Aug. 2012, Santa Barbara, CA / 2012
    ISBN: 978-1-4673-1724-5; 978-1-4673-1725-2
    Online Volltext: dx.doi.org/
  • Lysov, A.; Gutsche, C.; Prost, Werner; Tegude, Franz-Josef
    Single GaAs nanowire photovoltaic devices under very high power illumination
    In: International Conference on Indium Phosphide and Related Materials (IPRM), 2012 / International Conference on Indium Phosphide and Related Materials, 27 - 30 Aug. 2012, Santa Barbara, CA / 2012
    ISBN: 978-1-4673-1724-5
    Online Volltext: dx.doi.org/
  • Tchegho Kamgaing, A.; Muenstermann, B.; Geitmann, Ralf; Benner, O.; Blekker, K.; Prost, Werner; Tegude, Franz-Josef
    High performance submicron RTD design for mm-wave oscillator applications
    In: Conference Proceedings - International Conference on Indium Phosphide and Related Materials / 23rd International Conference on Indium Phosphide and Related Materials / IPRM 2011, May 22 - 26, 2011, Maritim ProArte Hotel, Berlin,Germany / 2011, S. 133 - 136
    ISBN: 978-3-8007-3356-9 ISSN: 1092-8669
  • Lysov, Andrey; Gutsche, Christoph; Offer, Matthias; Regolin, Ingo; Prost, Werner; Tegude, Franz-Josef
    Spatially resolved photovoltaic performance of axial GaAs nanowire pn-diodes
    In: 2011 69th Annual Device Research Conference (DRC 2011) / Annual Device Research Conference, Santa Barbara, California, USA, 20 - 22 June 2011 / 2011, S. 53 - 54
    ISBN: 978-1-61284-243-1; 978-1-61284-241-7
    Online Volltext: dx.doi.org/
  • Lysov, A.; Gutsche, C.; Offer, Matthias; Regolin, I.; Prost, Werner; Tegude, Franz-Josef
    The optoelectronic performance of axial and radial GaAs nanowire pn-diodes
    In: Conference Proceedings / 23rd International Conference on Indium Phosphide and Related Materials / IPRM 2011, May 22 - 26, 2011, Maritim ProArte Hotel, Berlin,Germany / 2011, S. 276 - 278
    ISBN: 978-3-8007-3356-9
  • Münstermann, B.; Blekker, K.; Tchegho, A.; Brockerhoff, Wolfgang; Tegude, Franz-Josef
    Design of low-power RTD-based-VCOs for Ka-band application
    In: 2010 German Microwave Conference / German Microwave Conference, (GeMiC 2010) ; Berlin, Germany, 15 - 17 March 2010 / 2010, S. 39 - 42
    ISBN: 978-1-4244-4933-0; 978-3-9812-6681-8
  • Prost, Werner; Tegude, Franz-Josef
    Fabrication and RF performance of InAs Nanowire FET
    In: Device Research Conference (DRC), 2010 / Device Research Conference, 21 - 23 June 2010, The University of Notre Dame, Notre Dame, Indiana / 2010, S. 279 - 282
    ISBN: 978-1-4244-7870-5; 978-1-4244-6562-0 ISSN: 1548-3770
    Online Volltext: dx.doi.org/
  • Tchegho, A.; Muenstermann, B.; Gutsche, C.; Poloczek, Artur; Blekker, K.; Prost, Werner; Tegude, Franz-Josef
    Scalable high-current density RTDs with low series resistance
    In: International Conference on Indium Phosphide & Related Materials (IPRM), 2010: Conference Proceedings / International Conference on Indium Phosphide & Related Materials, May 31, 2010 - June 4, 2010, Takamatsu Symbol Tower, Kagawa, Japan / 2010, S. 358 - 361
    ISBN: 978-1-4244-5919-3; 978-1-4244-5920-9
    Online Volltext: dx.doi.org/
  • Poloczek, Artur; Weiß, M.; Fedderwitz, S.; Stöhr, Andreas; Prost, Werner; Jäger, Dieter; Tegude, Franz-Josef
    Integrated InGaAs pin-diode on exactly oriented silicon (001) substrate suitable for 10 Gbit/s digital applications
    In: LEOS 2007 / 20th annual meeting of the IEEE Lasers and Electro-Optics Society, 2007 ; 21 - 25 Oct. 2007, Lake Buena Vista, FL / 2007
    ISBN: 978-1-4244-0924-2
    Online Volltext: dx.doi.org/
  • Prost, Werner; Blekker, Kai; Do, Quoc-Thai; Regolin, Ingo; Tegude, Franz-Josef; Müller, Sven; Stichtenoth, Daniel; Wegener, Katharina; Ronning, Carsten
    Modeling the Carrier Mobility in Nanowire Channel FET
    In: Low-dimensional materials / 2007 MRS Spring Meeting, April 9-13, 2007 San Francisco, California, USA / 2007, S. 139 - 144
    ISBN: 978-1-60560-423-7
  • Noé, Reinhold; Rückert, Ulrich; Achiam, Yakoov; Tegude, Franz-Josef; Porte, Henri
    European "synQPSK" project : Toward synchronous optical quadrature phase shift keying with DFB lasers
    In: Coherent Optical Technologies and Applications / COTA 2006; Whistler, Canada; 25–30 June 2006 / 2006, S. CThC4
    ISBN: 1-55752-809-8
    Online Volltext: dx.doi.org/
  • Noé, Reinhold; Pfau, Timo; Achiam, Yakoov; Tegude, Franz-Josef; Porte, Henri
    Integrated components for optical QPSK transmission
    In: Frontiers in Optics 2006 / FiO 2006; Rochester, United States; 10 October 2006 / 2006, S. FMD4
    ISBN: 1-55752-818-7
    Online Volltext: dx.doi.org/
  • Prost, Werner; Kelly, P.; Guttzeit, A.; Khorenko, V.; Khorenko, E.; Matiss, A.; Driesen, J.; Mofor, A.-C.; Bakin, A.; Poloczek, Artur; Neumann, S.; Stöhr, Andreas; Jäger, Dieter; Mc Ginnity, M.; Schlachetzki, A.; Tegude, Franz-Josef
    Design and modelling of A III/V mobile-gate with optical input on a silicon substrate
    In: Conference Proceedings - International Conference on Indium Phosphide and Related Materials / International Conference on Indium Phosphide and Related Materials; Glasgow, Scotland; United Kingdom; 8 May 2005 through 12 May 2005 / 2005, S. 17 - 20
    ISBN: 0780388917; 9780780388918 ISSN: 1092-8669
    Online Volltext: dx.doi.org/
  • Schneider, Marc; Reimann, Thorsten; Heinzelmann, Robert; Stöhr, Andreas; Velling, Peter; Neumann, S.; Bertenburg, Ralf M.; Tegude, Franz-Josef; Jäger, Dieter
    A novel 1.55µm HBT-Electroabsorption modulator
    In: Proceedings of the International Topical Meeting on Microwave Photonics (MWP `01) / MWP `01, 7-9 Jan. 2002, Long Beach, CA, USA / 2002, S. 21 - 24
    ISBN: 0-7803-7003-1
    Online Volltext: dx.doi.org/
  • Reimann, Thorsten; Schneider, M.; Neumann, S.; Tegude, Franz-Josef; Jäger, Dieter
    Different approaches for integrating HBTs and EAMs
    In: The 10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications / The 10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications : EDMO 2002 ; 18 - 19 November, Manchester Conference Centre, Weston Building, UMIST, Manchester, UK / 2002, S. 149 - 154
    ISBN: 0-7803-7530-0
    Online Volltext: dx.doi.org/
  • Schneider, Marc; Reimann, Thorsten; Stöhr, Andreas; Neumann, S.; Tegude, Franz-Josef; Jäger, Dieter
    Monolithically integrated optoelectronic circuits using HBT, EAM, and TEAT
    In: Proceedings of the International Topical Meeting on Microwave Photonics (MWP 2002) / MWP 2002, November 5-8, Awaji, Japan / 2002, S. 349 - 352
    ISBN: 4-88552-187-4
    Online Volltext
  • Reimann, Thorsten; Schneider, Marc; Neumann, S.; Stöhr, Andreas; Tegude, Franz-Josef; Jäger, Dieter
    Waverguide HBT electroabsorption modulators : devices and circuits
    In: Proceedings of the 14th International Conference on Indium Phosphide and Related Materials (IPRM) / IPRM: May 12-16, 2002, Stockholm, Sweden / 2002, S. 123 - 126
    Online Volltext
  • Otten, Frank; Kruis, Frank Einar; Prost, Werner; Tegude, Franz-Josef; Fissan, Heinz
    Deposition of Gas-Phase Generated PbS Nanocrystals onto Patterned Substrates
    In: Proceedings, NANO-7 / ECOSS-21 / 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science, 24 - 28 June 2002, Malmö, Sweden / 2001
  • Reimann, Thorsten; Schneider, Marc; Velling, Peter; Neumann, S.; Agethen, Michael; Bertenburg, Ralf M.; Heinzelmann, Robert; Stöhr, Andreas; Jäger, Dieter; Tegude, Franz-Josef
    Integration of heterostructure bipolartransistor and electroabsorption waveguide modulator based on a multifunctional layer design for 1.55µm
    In: Proceedings of the IEEE International Conference on Indium Phosphide and Related Materials (IPRM 2001) / IPRM 2001: 14-18 May 2001 , Nara, Japan / 2001, S. 440 - 443
    ISBN: 0-7803-6700-6 ISSN: 1092-8669
    Online Volltext: dx.doi.org/
  • Otten, F.; Kruis, Frank Einar; Peled, A.; Prost, W.; Fissan, Heinz; Tegude, Franz-Josef
    Electrical Properties of Discontinuous PbS Nanoparticle Films on MSM and MIM Detectors
    In: Book of abstracts / Second Joint NSF-ESF Symposium on Nanoparticles: Technologies and Applications: Tacoma, Washington, USA, October 10, 1999 / Joint NSF-ESF Symposium on Nanoparticles: Technologies and Applications ; (Tacoma, Wash.) : 1999.10.10; / Pui, David H. (Hrsg.), 1999, S. P4-1 - P4-4
  • Dillmann, F.; Brennemann, P.; Hardtdegen, Hilde; Marso, Michel; Löken, M.; Kordoš, Peter; Lüth, Hans Joachim; Tegude, Franz-Josef; Kwaspen, J.M.M.; Kaufmann, Leon Marcel Freddy
    A new concept for a monolithically integrated optoelectronic receiver based on a GaAs-PIN-photodiode and a PJBT
    In: Conference Proceedings of the 2nd International Conference on Advanced Semiconductor Devices And Microsystems / 2nd International Conference on Advanced Semiconductor Devices And Microsystems, ASDAM 1998; Smolenice; Slovakia; 5 -7 October 1998 / Jg. 1998 1998, Nr. October, S. 291 - 294
    ISBN: 0780349091; 9780780349094
    Online Volltext: dx.doi.org/
  • Alles, M.; Auer, Uwe; Tegude, Franz-Josef; Jäger, Dieter
    Distributed Velocity-matched 1.55um InP Travelling-Wave Photodetector for Generation of High Millimeterwave Signal Power
    In: MTT-S International Microwave Symposium and Exhibition / MTT-S International Microwave Symposium and Exhibition, Baltimore, Maryland, 1998 / 1998, S. 1233 - 1236
    Online Volltext
  • Jäger, Dieter; Auer, U.; Tegude, Franz-Josef; Jäger, Dieter
    Nonlinear RTD Transmission Lines
    In: Proceedings of the 5th International Workshop on Integrated Nonlinear Mircowave and Millimeterwave Circuits (INMMC`98) / INMMC`98, Duisburg, Germany / 1998, S. 82 - 87
  • Alles, M.; Auer, U.; Tegude, Franz-Josef; Jäger, Dieter
    High-Speed Travelling-Wave Photodetectors for Optical Generation of Millimeterwaves
    In: Proceedings of the Asia Pacific Microwave Conference / APMC '97, 2-5 Dec. 1997, Hong Kong / Jg. 2 1997, S. 573 - 576
  • Alles, M.; Auer, U.; Tegude, Franz-Josef; Jäger, Dieter
    High-speed Travelling-Wave Photodetectors for Wireless Optical Millimeter Wave Transmission
    In: Proceedings of IEEE International Topical Meeting on Microwave Photonics / MWP '97: from September 3 through 5 at Schloß Hugenpoet, Duisburg/Essen / 1997, S. 103 - 106
  • Alles, M.; Auer, U.; Tegude, Franz-Josef; Jäger, Dieter
    Millimeterwave Photodetectors, Microwaves and Optronics
    In: Mikrowellen und Optronik: Kongreßunterlagen / MIOP ’97, 9. Kongreßmesse für Hochfrequenztechnik, Funkkommunikation und elelektromagnetische Verträglichkeit, 22. - 24. April 1997, Sindelfingen, Deutschland / 1997
    ISBN: 978-3-924651-53-4
  • Braasch, T.; David, G.; Hülsewede, R.; Auer, Uwe; Tegude, Franz-Josef; Jäger, Dieter
    Propagation of Microwaves in MMICs Studied by Time- and Frequency-Domain Electro-Optic Field Mapping
    In: Spring Topical Meeting / Spring Topical Meeting, March, Lake Tahoe, USA, 1997 / 1997, S. 190 - 195
  • Kremer, R.; David, G.; Redlich, S.; Dragoman, M.; Buchali, F.; Tegude, Franz-Josef; Jäger, Dieter
    A High Speed MSM-Travelling-Wave Photodetector for InP-Based MMICs
    In: Mikrowellen und Optronik: Kongreßunterlagen / MIOP '93, Mikrowellen und Optronik, 7. Kongressmesse für Höchstfrequenztechnik, 25. - 27. Mai 1993, Sindelfingen, Deutschland / 1993, S. 271 - 275
    ISBN: 978-3-924651-36-7
  • David, G.; Redlich, S.; Mertin, Wolfgang; Bertenburg, Ralf M.; Koßlowski, S.; Tegude, Franz-Josef; Kubalek, Erich; Jäger, Dieter
    Two-dimensional direct electro-optic field mapping in a monolithic integrated GaAs amplifier
    In: Proceedings of the 23rd European Microwave Conference (EuMC'93) / EuMC'93, 10. September 1993, Madrid, Spain / 1993, S. 497 - 499
    Online Volltext
  • Dragoman, M.; Block, M.; Kremer, R.; Buchali, F.; Tegude, Franz-Josef; Jäger, Dieter
    Coplanar InAlAs/InGaAs/InP microwave delay line with optical control
    In: Proceedings of IEEE Lasers and Electro-Optics Society: Annual Meeting 1992 / LEOS '92: 16-19 Nov. 1992, Boston, MA, USA / 1992, S. 684 - 685
    Online Volltext: dx.doi.org/
  • Dragoman, Mircea L.; Block, M.; Kremer, Ralf; Buchali, Fred; Tegude, Franz-Josef; Jäger, Dieter
    Coplanar microwave phase shifter for InP-based MMICs
    In: Proceedings of the European Solid-State Device Research Conference / 22nd European Solid State Device Research Conference, ESSDERC 1992; Leuven; Belgium; 14 September 1992 through 17 September 1992 / 1992, Nr. 4, S. 421 - 424
    ISBN: 0444894780 ISSN: 1930-8876
    Online Volltext
  • Buchali, F.; Gyuro, I.; Scheffer, F.; Prost, Werner; Block, M.; von Wendorff, W.C.; Heymann, G.; Tegude, Franz-Josef; Speier, P.; Jäger, Dieter
    Interdigitated electrode and coplanar waveguide InAlAs/InGaAs MSM photodetectors grown by LP MOVPE
    In: Proceedings of the Fourth Indium Phosphide and Related Materials Conference / 4th International Conference on Indium Phosphide and Related Materials - IPRM'92, 21.-24. April 1992, Newport, United States / 1992, S. 596 - 599
    ISBN: 0-7803-0522-1
    Online Volltext: dx.doi.org/
  • Tegude, Franz-Josef; Heime, Klaus
    Investigation of Deep Levels at Interfaces by Means of FET-Structures and Optical Excitation
    In: Proceedings of the 11th International Symposium on GaAs and Related Compounds / GaAs RC´84; Biarritz, France; 26.09. - 28.09.1984 / 1984, S. 305 - 310
  • Tegude, Franz-Josef; Baston, J.; Arnold, Norbert; Heime, Klaus
    Deep Level Profiles of GaAs Active Layers and their Correlation to Substrate Properties
    In: Semi-insulating III-V materials: Evian 1982 / Conference on Semi-Insulating III-V Materials 2; 1982.04.19-21; Evian, France / 1982, S. 291 - 297
    ISBN: 0906812224
  • Tegude, Franz-Josef; Heime, Klaus
    Deep Level Measurements of Layers on Semi-Insulating GaAs Substrates by Means of the Photofet Method
    In: Semi-Insulating III–V Materials: Nottingham 1980 / Rees, G. J. (Hrsg.), 1980, S. 321 - 328
    ISBN: 978-1-4684-9193-7; 978-1-4684-9195-1
    Online Volltext: dx.doi.org/

    • Vorträge

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  • Matiss, A.; Poloczek, Artur; Stöhr, Andreas; Brockerhoff, Wolfgang; Prost, Werner; Tegude, Franz-Josef;
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    International Conference on Ultra-Wideband ICUWB 2007, Singapore, 24-26 September 2007,
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  • Prost, Werner; Khorenko, V.; Kelly, P.; Mofor, A.-C.; Neumann, S.; Poloczek, Artur; Brennenmann, A.; Matiss, A.; Bakin, A.; Stöhr, Andreas; Jäger, Dieter; Ginnity, M. Mc; Schlachetzki, A.; Tegude, Franz-Josef;
    High Performance III/V RTD and PIN Diodes on a silicon substrate
    6th Topical Workshop on Heterostructure Microelectronics, TWHM Awaji Island, Hyogo, Japan, Aug. 22-25, 2005,
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    (2003)
    Online Volltext
  • Reimann, Thorsten; Schneider, Marc; Velling, Peter; Neumann, S.; Agethen, Michael; Bertenburg, Ralf M.; Heinzelmann, Robert; Stöhr, Andreas; Jäger, Dieter; Tegude, Franz-Josef;
    Demonstration von Heterostruktur-Bipolartransistoren und Elektroabsorptionsmodulatoren auf der Basis eines multifunktionalen Schichtdesigns
    65. Physikertagung und Frühjahrstagung des Arbeitskreises Festkörperphysik der DPG, Hamburg, Germany,
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    11th European Heterostructure Technology Workshop, Padova, Italien, 28. - 30. Oktober 2001,
    Padua (2001)
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  • Reimann, Thorsten; Schneider, Marc; Velling, Peter; Neumann, S.; Agethen, Michael; Bertenburg, Ralf M.; Heinzelmann, Robert; Stöhr, Andreas; Jäger, Dieter; Tegude, Franz-Josef;
    Heterostructure bipolartransistor combining electroabsorption waveguide modulator based on a multifunctional layer design for 1.55µm
    12th IEEE III-V Semiconductor Device Simulation Workshop in combination with the HBT Workshop, Duisburg, Germany, 2000,
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  • Braasch, T.; David, G.; Hülsewede, R.; Auer, U.; Tegude, Franz-Josef; Jäger, Dieter;
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    MIOP ´97, Sindelfingen,
    Sindelfingen (1997)
  • Jäger, Dieter; Zumkley, S.; Wingen, G.; Auer, Uwe; Tegude, Franz-Josef;
    40 GHz Vertical Electrooptical Fabry-Perot Modulator with Schottky contacts
    CLEO/EUROPE `94, Amsterdam, Niederlande, 1994,
    (1994)
  • Redlich, S.; Kremer, R.; Neubauer, A.; Bollig, B.; Liu, Q.; Kubalek, Erich; Tegude, Franz-Josef; Laws, P.; Jäger, Dieter;
    InAlAs/InGaAs Heterostrukturen auf InP zur Realisierung optisch steuerbarer Höchstfrequenzleitungen
    9. Treffen des DGKK Arbeitskreises "Epitaxie von III/V-Halbleitern", Duisburg, Dezember 1994,
    (1994)