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Lotharstr. 55 (LT)
47057 Duisburg
Raum
LT 207

Funktionen

  • Universitätsprofessor/in, Bauelemente der Höchstfrequenz-Elektronik

Die folgenden Publikationen sind in der Online-Universitätsbibliographie der Universität Duisburg-Essen verzeichnet. Weitere Informationen finden Sie gegebenenfalls auch auf den persönlichen Webseiten der Person.

    Artikel in Zeitschriften

  • Koch, Juliane; Liborius, Lisa; Kleinschmidt, Peter; Prost, Werner; Weimann, Nils; Hannappel, Thomas
    Impact of the Tip-to-Semiconductor Contact in the Electrical Characterization of Nanowires
    In: ACS Omega Jg. 9 (2024) Nr. 5, S. 5788 - 5797
  • Biurrun-Quel, Carlos; Haddad, Thomas; Sievert, Benedikt; Kress, Robin; Weimann, Nils; Erni, Daniel; Rennings, Andreas; Stöhr, Andreas; Teniente, Jorge; del-Río, Carlos
    Design and Characterization of Terahertz CORPS Beam Forming Networks
    In: Journal of Infrared, Millimeter, and Terahertz Waves Jg. 44 (2023) Nr. 5-6, S. 430 - 457
  • Mutlu, Enes; Grygoriev, Anton; Clochiatti, Simone; Kress, Robin; Preuss, Christian; Possberg, Alexander; Prost, Werner; Weimann, Nils
    Experimental and Theoretical Investigation of Collector Spacer and Doping Profile on Triple-Barrier Resonant Tunneling Diodes
    In: Physica Status Solidi (A) - Applications and Materials Science (2023) 2300575 in press
  • Grzeslo, Marcel; Dülme, Sebastian; Clochiatti, Simone; Neerfeld, Tom; Haddad, Thomas; Lu, Peng; Tebart, Jonas; Makhlouf, Sumer; Biurrun-Quel, Carlos; Fernández-Estévez, José Luis; Lackmann, Jörg; Weimann, Nils; Stöhr, Andreas
    High saturation photocurrent THz waveguide-type MUTC-photodiodes reaching mW output power within the WR3.4 band
    In: Optics Express (OpEx) Jg. 31 (2023) Nr. 4, S. 6484 - 6498
  • Meier, Johanna; Häuser, Patrick; Blumberg, Christian; Smola, Tim; Prost, Werner; Weimann, Nils; Bacher, Gerd
    Local optical analysis of InGaN/GaN nanorod LED structures grown on Si(111)
    In: Journal of Applied Physics Jg. 134 (2023) Nr. 4, 044303
  • Makhlouf, Sumer; Cojocari, Oleg; Hofmann, Martin; Nagatsuma, Tadao; Preu, Sascha; Weimann, Ph.D., Nils; Hübers, Heinz-Wilhelm; Stöhr, Andreas
    Terahertz Sources and Receivers : From the Past to the Future
    In: IEEE Journal of Microwaves Jg. 3 (2023) Nr. 3, S. 894 - 912
  • Sheikh, Fawad; Prokscha, Andreas; Batra, Aman; Lessy, Dien; Salah, Baha; Sievert, Benedikt; Degen, Marvin; Rennings, Andreas; Jalali, Mandana; Svejda, Jan Taro; Alibeigloo, Pooya; Preuß, Christian; Mutlu, Enes; Kreß, Robin; Clochiatti, Simone; Kolpatzeck, Kevin; Kubiczek, Tobias; Ullmann, Ingrid; Root, Konstantin; Brix, Fabian; Krämer, Ute; Vossiek, Martin; Balzer, Jan C.; Weimann, Nils; Kaiser, Thomas; Erni, Daniel
    Towards Continuous Real-Time Plant and Insect Monitoring by Miniaturized THz Systems
    In: IEEE Journal of Microwaves Jg. 3 (2023) Nr. 3, S. 913 - 937
  • Schmidt, Robin; Clochiatti, Simone; Mutlu, Enes; Weimann, Nils; Ferrero, Andrea; Dieudonne, Michael; Schreurs, Dominique M. M.-P.
    Compensating Probe Misplacements in On-Wafer S -Parameters Measurements
    In: IEEE Transactions on Microwave Theory and Techniques (T-MTT) Jg. 70 (2022) Nr. 11, S. 5213 - 5223
  • Koch, Juliane; Liborius, Lisa; Kleinschmidt, Peter; Weimann, Ph.D., Nils; Prost, Werner; Hannappel, Thomas
    Electrical Properties of the Base-Substrate Junction in Freestanding Core-Shell Nanowires
    In: Advanced Materials Interfaces Jg. 9 (2022) Nr. 30, 2200948
  • Hrobak, Michael; Thurn, Karsten; Moll, Jochen; Hossain, Maruf; Shrestha, Amit; Al-Sawaf, Thualfiqar; Stoppel, Dimitri; Weimann, Nils; Rämer, Adam; Heinrich, Wolfgang; Martinez, Javier; Vossiek, Martin; Johansen, Tom K.; Krozer, Viktor; Resch, Marion; Bosse, Jürgen; Sterns, Michael; Loebbicke, Kai; Zorn, Stefan; Eissa, Mohamed; Lisker, Marco; Herzel, Frank; Miesen, Robert; Vollmann, Klaus
    A Modular MIMO Millimeter-Wave Imaging Radar System for Space Applications and Its Components
    In: Journal of Infrared, Millimeter, and Terahertz Waves Jg. 42 (2021) Nr. 3, S. 275 - 324
  • Heinrich, Wolfgang; Hossain, Maruf; Sinha, Siddhartha; Schmuckle, Franz-Josef; Doerner, Ralf; Krozer, Viktor; Weimann, Nils
    Connecting Chips With More Than 100 GHz Bandwidth
    In: IEEE Journal of Microwaves Jg. 1 (2021) Nr. 1, S. 364 - 373
  • Cimbri, Davide; Weimann, Nils; Al-Taai, Qusay Raghib Ali; Ofiare, Afesomeh; Wasige, Edward
    Ohmic Contacts Optimisation for High-Power InGaAs/AlAs Double-Barrier Resonant Tunnelling Diodes Based on a Dual-Exposure E-Beam Lithography Approach
    In: International Journal of Nanoelectronics and Materials Jg. 14 (2021) Nr. Special Issue InCAPE, S. 11 - 19
  • Häuser, Patrick; Blumberg, Christian; Liborius, Lisa; Prost, Werner; Weimann, Ph.D., Nils
    Polarity-controlled AlN/Si templates by in situ oxide desorption for variably arrayed MOVPE-GaN nanowires
    In: Journal of Crystal Growth Jg. 566-567 (2021) S. 126162
  • Villani, Matteo; Clochiatti, Simone; Prost, Werner; Weimann, Nils; Oriols, Xavier
    There is Plenty of Room for THz Tunneling Electron Devices Beyond the Transit Time Limit
    In: IEEE Electron Device Letters Jg. 42 (2021) Nr. 2, S. 224 - 227
  • Liborius, Lisa; Bieniek, Jan; Poßberg, Alexander; Tegude, Franz-Josef; Prost, Werner; Poloczek, Artur; Weimann, Nils
    Tunneling-Related Leakage Currents in Coaxial GaAs/InGaP Nanowire Heterojunction Bipolar Transistors
    In: Physica Status Solidi (B): Basic Solid State Physics Jg. 258 (2021) Nr. 2, S. 2000395
  • Blumberg, Christian; Häuser, Patrick; Wefers, Fabian; Jansen, Dennis; Tegude, Franz-Josef; Weimann, Nils; Prost, Werner
    A systematic study of Ga- And N-polar GaN nanowire-shell growth by metal organic vapor phase epitaxy
    In: CrystEngComm Jg. 22 (2020) Nr. 33, S. 5522 - 5532
  • Blumberg, Christian; Liborius, Lisa; Ackermann, Julia; Tegude, Franz-Josef; Poloczek, Artur; Prost, Werner; Weimann, Nils
    Spatially controlled VLS epitaxy of gallium arsenide nanowires on gallium nitride layers
    In: CrystEngComm Jg. 22 (2020) Nr. 7, S. 1239 - 1250
  • Arzi, Khaled; Suzuki, Safumi; Rennings, Andreas; Erni, Daniel; Weimann, Nils; Asada, Masahiro; Prost, Werner
    Subharmonic Injection Locking for Phase and Frequency Control of RTD-Based THz Oscillator
    In: IEEE Transactions on Terahertz Science and Technology Jg. 10 (2020) Nr. 2, S. 221 - 224
  • Hillger, Philipp; van Delden, Marcel; Thanthrige, Udaya Sampath Miriya; Ahmed, Aya Mostafa; Wittemeier, Jonathan; Arzi, Khaled; Andree, Marcel; Sievert, Benedikt; Prost, Werner; Rennings, Andreas; Erni, Daniel; Musch, Thomas; Weimann, Nils; Sezgin, Aydin; Pohl, Nils; Pfeiffer, Ullrich R.
    Toward mobile integrated electronic systems at THz frequencies
    In: Journal of Infrared, Millimeter, and Terahertz Waves Jg. 41 (2020) Nr. 7, S. 846 - 869
  • Liborius, Lisa; Bieniek, Jan; Nägelein, Andreas; Tegude, Franz-Josef; Prost, Werner; Hannappel, Thomas; Poloczek, Artur; Weimann, Nils
    n-Doped InGaP Nanowire Shells in GaAs/InGaP Core–Shell p–n Junctions
    In: Physica Status Solidi (B): Basic Solid State Physics Jg. 257 (2020) Nr. 2, S. 1900358
  • Maculewicz, Franziska; Wagner, Thorsten; Arzi, Khaled; Hartmann, Nils; Weimann, Nils; Schmechel, Roland
    Experimental evidence for the separation of thermally excited bipolar charge carries within a p-n junction : A new approach to thermoelectric materials and generators
    In: Journal of Applied Physics Jg. 125 (2019) Nr. 18, S. 184502
  • Blumberg, Christian; Wefers, Fabian; Tegude, Franz-Josef; Weimann, Nils; Prost, Werner
    Mask-less MOVPE of arrayed n-GaN nanowires on site- and polarity-controlled AlN/Si templates
    In: CrystEngComm Jg. 21 (2019) Nr. 48, S. 7476 - 7488
  • Stoppel, Dimitri; Ostermay, Ina; Hrobak, Michael; Shivan, Tanjil; Hossain, Maruf; Reiner, Maria; Thiele, Nico; Nosaeva, Ksenia; Brahem, Mohamed; Krozer, Viktor; Boppel, Sebastian; Halder, Nripendra; Weimann, Nils
    NiCr resistors for terahertz applications in an InP DHBT process
    In: Microelectronic Engineering Jg. 208 (2019) S. 1 - 6
  • Brahem, Mohamed; Mogilatenko, Anna V.; Stoppel, Dimitri; Berger, Dirk; Hochheim, Stefan; Rentner, D.; Ostermay, Ina; Reiner, Maria; Boppel, Sebastian; Nosaeva, Ksenia S.; Weimann, Nils
    Thermally stable iridium contacts to highly doped p-In₀:₅₃Ga₀:₄₇As for indium phosphide double heterojunction bipolar transistors
    In: Microelectronic Engineering Jg. 215 (2019) S. 111017
  • Liborius, Lisa; Heyer, Fabian; Arzi, Khaled; Speich, Claudia; Prost, Werner; Tegude, Franz-Josef; Weimann, Nils; Poloczek, Artur
    Toward Nanowire HBT : Reverse Current Reduction in Coaxial GaAs/InGaP n(i)p and n(i)pn Core-Multishell Nanowires
    In: Physica Status Solidi (A) - Applications and Materials Science Jg. 216 (2019) Nr. 1, S. 1800562
  • Shivan, Tanjil; Hossain, Maruf; Stoppel, Dimitri; Weimann, Nils; Boppel, Sebastian; Doerner, Ralf; Heinrich, Wolfgang; Krozer, Viktor
    220–325 GHz high-isolation SPDT switch in InP DHBT technology
    In: Electronics Letters Jg. 54 (2018) Nr. 21, S. 1222 - 1224
  • Shivan, Tanjil; Weimann, Nils; Hossain, Maruf M.; Stoppel, Dimitri; Boppel, Sebastian; Ostinelli, Olivier J.S.; Doerner, Ralf; Bolognesi, Colombos R.; Krozer, Viktor; Heinrich, Wolfgang
    A Highly Efficient Ultrawideband Traveling-Wave Amplifier in InP DHBT Technology
    In: IEEE Microwave and Wireless Components Letters Jg. 28 (2018) Nr. 11, S. 1029 - 1031
  • Johansen, Tom K.; Doerner, Ralf; Weimann, Nils; Hossain, Maruf; Krozer, Viktor; Heinrich, Wolfgang
    EM simulation assisted parameter extraction for transferred-substrate InP HBT modeling
    In: Mineralogical Magazine Jg. 10 (2018) Nr. 5-6, S. 700 - 708
  • Blumberg, Christian; Grosse, Simon; Weimann, Nils; Tegude, Franz-Josef; Prost, Werner
    Polarity- and Site-Controlled Metal Organic Vapor Phase Epitaxy of 3D-GaN on Si(111)
    In: Physica Status Solidi (B): Basic Solid State Physics Jg. 255 (2018) Nr. 5, S. 1700485
  • Weimann, Nils G.; Johansen, Tom K.; Stoppel, Dimitri; Matalla, Matthias; Brahem, Mohamed; Nosaeva, Ksenia; Boppel, Sebastian; Volkmer, Nicole; Ostermay, Ina; Krozer, Viktor; Ostinelli, Olivier; Bolognesi, Colombo R.
    Transferred-Substrate InP/GaAsSb Heterojunction Bipolar Transistor Technology With fmax ~ 0.53 THz
    In: IEEE Transactions on Electron Devices (T-ED) Jg. 65 (2018) Nr. 9, S. 3704 - 3710
  • Wentzel, Andreas; Hossain, Maruf; Stoppel, DImitri; Weimann, Nils; Krozer, Viktor; Heinrich, Wolfgang
    An efficient W-band InP DHBT digital power amplifier
    In: International Journal of Microwave and Wireless Technologies Jg. 9 (2017) Nr. 6, S. 1241 - 1249
  • Sinha, Siddhartha; Doerner, Ralf; Schmuckle, Franz-Josef; Monayakul, Sirinpa; Hrobak, Michael; Weimann, Nils; Krozer, Viktor; Heinrich, Wolfgang
    Flip-Chip Approach for 500 GHz Broadband Interconnects
    In: IEEE Transactions on Microwave Theory and Techniques (T-MTT) Jg. 65 (2017) Nr. 4, S. 1215 - 1225
  • Weimann, Nils; Monayakul, Sirinpa; Sinha, Siddhartha; Schmuckle, Franz-Josef; Hrobak, Michael; Stoppel, Dimitri; John, Wilfred; Kruger, Olaf; Doerner, Ralf; Janke, Bernd; Krozer, Viktor; Heinrich, Wolfgang
    Manufacturable low-cost flip-chip mounting technology for 300-500-GHz assemblies
    In: IEEE Transactions on Components, Packaging and Manufacturing Technology Jg. 7 (2017) Nr. 4, S. 494 - 501
  • Hossain, Maruf; Ostermay, Ina; Weimann, Nils; Schmueckle, Franz Josef; Borngraeber, Johannes; Meliani, Chafik; Lisker, Marco; Tillack, Bernd; Krueger, Olaf; Krozer, Viktor; Heinrich, Wolfgang
    Performance study of a 248 GHz voltage controlled hetero-integrated source in InP-on-BiCMOS technology
    In: International Journal of Microwave and Wireless Technologies Jg. 9 (2017) Nr. 2, S. 259 - 268
  • Weimann, Nils; Hossain, Maruf; Krozer, Viktor; Heinrich, Wolfgang; Lisker, Marco; Mai, Andreas; Tillack, Bernd
    Tight Focus Toward the Future: Tight Material Combination for Millimeter-Wave RF Power Applications : InP HBT SiGe BiCMOS Heterogeneous Wafer-Level Integration
    In: IEEE Microwave Magazine Jg. 18 (2017) Nr. 2, S. 74 - 82
  • Hossain, Maruf M.; Nosaeva, Ksenia S.; Janke, Bernd; Weimann, Nils; Krozer, Viktor; Heinrich, Wolfgang
    A G-band high power frequency doubler in transferred-substrate InP HBT technology
    In: IEEE Microwave and Wireless Components Letters Jg. 26 (2016) Nr. 1, S. 49 - 51
  • Stoppel, Dimitri; John, Wilfried; Zeimer, Ute; Kunkel, K.; Schukfeh, Muhammed Ihab; Krüger, Olaf; Weimann, Nils
    Benzocyclobutene dry etch with minimized byproduct redeposition for application in an InP DHBT process
    In: Microelectronic Engineering Jg. 161 (2016) S. 63 - 68
  • Nosaeva, Ksenia; Al-Sawaf, Thualfiqar; John, Wilfred; Stoppel, Dimitri; Rudolph, Matthias; Schmuckle, Franz-Josef; Janke, Bernd; Kruger, Olaf; Krozer, Viktor; Heinrich, Wolfgang; Weimann, Nils G.
    Multifinger indium phosphide double-heterostructure transistor circuit technology with integrated diamond heat sink layer
    In: IEEE Transactions on Electron Devices (T-ED) Jg. 63 (2016) Nr. 5, S. 1846 - 1852
  • Weimann, Nils; Stoppel, Dimitri; Schukfeh, Muhammed I.; Hossain, Maruf; Al-Sawaf, Thualfiqar; Janke, Bernd; Doerner, Ralf; Sinha, Siddharta; Schmückle, Franz-Josef; Krüger, Olaf; Krozer, Viktor; Heinrich, Wolfgang; Lisker, Marco; Krüger, Andreas; Datsuk, Anton; Meliani, Chafik; Tillack, Bernd
    SciFab -a wafer-level heterointegrated InP DHBT/SiGe BiCMOS foundry process for mm-wave applications
    In: Physica Status Solidi (A): Applications and Materials Science Jg. 213 (2016) Nr. 4, S. 909 - 916
  • Monayakul, Sirinpa; Sinha, Siddhartha; Wang, Chinte; Weimann, Nils; Schmückle, Franz Josef; Hrobak, Michael; Krozer, Viktor; John, Wilfried; Weixelbaum, Leonhard; Wolter, Peter; Krüger, Olaf; Heinrich, Wolfgang
    Flip-Chip Interconnects for 250 GHz Modules
    In: IEEE Microwave and Wireless Components Letters Jg. 25 (2015) Nr. 6, S. 358 - 360
  • Nosaeva, Ksenia S.; Weimann, Nils; Rudolph, Matthias; John, Wilfried; Krueger, Olaf; Heinrich, Wolfgang
    Improved thermal management of InP transistors in transferred-substrate technology with diamond heat-spreading layer
    In: Electronics Letters Jg. 51 (2015) Nr. 13, S. 1010 - 1012
  • Lisker, Marco; Trusch, Andreas; Krüger, Andreas; Fraschke, Mirko; Kulse, Philipp; Marschmeyer, Steffen; Schmidt, Jens; Meliani, Chafik; Tillack, Bernd; Weimann, Nils; Kraemer, Tomas; Ostermay, Ina; Krüger, Olaf; Jensen, Thomas J.; Al-Sawaf, Thualfiqar; Krozer, Viktor; Heinrich, Wolfgang
    Combining SiGe BiCMOS and InP processing in an on-top of chip integration approach
    In: ECS Transactions Jg. 64 (2014) Nr. 6, S. 177 - 194
  • Johansen, Tom K.; Rudolph, Matthias; Jensen, Thomas; Kraemer, Tomas; Weimann, Nils; Schnieder, Frank; Krozer, Viktor; Heinrich, Wolfgang
    Small- and large-signal modeling of InP HBTs in transferred-substrate technology
    In: International Journal of Microwave and Wireless Technologies Jg. 6 (2014) Nr. 3-4, S. 243 - 251
  • Ostermay, Ina; Thies, Andreas; Kraemer, Tomas; John, Wilfried; Weimann, Nils; Schmückle, Franz Josef; Sinha, Siddhartha; Krozer, Viktor; Heinrich, Wolfgang; Lisker, Marco; Tillack, Bernd; Krüger, Olaf
    Three-dimensional InP-DHBT on SiGe-BiCMOS integration by means of Benzocyclobutene based wafer bonding for MM-wave circuits
    In: Microelectronic Engineering Jg. 125 (2014) S. 38 - 44
  • Doerr, Christopher Richard; Zhang, Liming; Winzer, Peter J.; Weimann, Nils; Houtsma, Vincent E.; Hu, Tingchen; Sauer, Nicholas J.; Buhl, Lawrence L.; Neilson, David T.; Chandrasekhar, Sethumadhavan; Chen, Young Kai
    Monolithic InP dual-polarization and dual-quadrature coherent receiver
    In: IEEE Photonics Technology Letters Jg. 23 (2011) Nr. 11, S. 694 - 696
  • Chen, Long; Zhang, Liming; Doerr, Christopher R.; Dupuis, Nicolas; Weimann, Nils; Kopf, Rose F.
    Efficient membrane grating couplers on InP
    In: IEEE Photonics Technology Letters Jg. 22 (2010) Nr. 12, S. 890 - 892
  • Weimann, Nils; Houtsma, Vincent; Kopf, Rose; Baeyens, Yves; Weiner, Joseph; Tate, Alaric; Frackoviak, John; Chen, Young-Kai; Raybon, Gregory; Godin, Jean; Riet, Muriel; Nodjiadjim, Virginie; Konczykowska, Agnieszka; Dupuy, Jean-Yves; Jorge, Filipe; Scavennec, André; Charlet, Gabriel
    InP DHBT Circuits : From device physics to 40gb/s and 100gb/s transmission system experiments
    In: Bell Labs Technical Journal Jg. 14 (2009) Nr. 3, S. 43 - 62
  • Lin, Jie; Leven, Andreas; Weimann, Nils; Yang, Yang; Kopf, Rose F.; Reyes, Roberto R.; Chen, Young Kai
    High-speed low-loss Schottky-i-n InP-based optical modulator for RF photonics
    In: IEEE Photonics Technology Letters Jg. 19 (2007) Nr. 5, S. 270 - 272
  • Chen, Jianxin; Malis, Oana; Sergent, Arthur Michael; Sivco, Deborah L.; Weimann, Nils; Cho, Alfred Y.H.
    In₀.₆₈ Ga₀.₃₂ As / A1₀.₆₄ In₀.₃₆ As / In P 4.5 µm quantum cascade lasers grown by solid phosphorus molecular beam epitaxy
    In: Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics Jg. 25 (2007) Nr. 3, S. 913 - 915
  • Mitrofanov, Oleg; Schmult, Stefan; Manfra, Michael J.; Siegrist, Theo M.; Weimann, Nils; Sergent, Arthur Michael; Molnar, Richard J.
    High-reflectivity ultraviolet AlGaN/AlGaN distributed Bragg reflectors
    In: Applied Physics Letters (APL) Jg. 88 (2006) Nr. 17, S. 171101
  • Weimann, Nils; Houtsma, Vincent E.; Yang, Yang; Frackoviak, John; Tate, Alaric I.; Chen, J.; Weiner, Joseph S.; Lee, Jaesik; Baeyens, Yves; Chen, Y.K.;
    InP double-hetero bipolar transistor technology for 130 GHz clock speed
    32nd International Symposium on Compound Semiconductors; ISCS-2005; Rust, Germany; 18 - 22 September 2005,
    In: Physica Status Solidi (C): Current Topics in Solid State Physics Jg. 3 (2006) Nr. 3, S. 452 - 455
  • Hu, Ting-Chen; Chang, Mau-Chung Frank; Weimann, Nils; Chen, Jianxin; Chen, Young-Kai
    Surface roughness in sulfur ion-implanted InP with molecular beam epitaxy regrown double-heterojunction bipolar transistor layers
    In: Applied Physics Letters (APL) Jg. 86 (2005) Nr. 14, S. 143508
  • Baeyens, Yves; Weimann, Nils; Roux, Pascal; Leven, Andreas; Houtsma, Vincent; Kopf, Rose F.; Yang, Yang; Frackoviak, John; Tate, Alaric; Weiner, Joseph S.; Paschke, Peter; Chen, Young-Kai
    High gain-bandwidth differential distributed InP D-HBT driver amplifiers with large (11.3 VDD) output swing at 40 Gb/s
    In: IEEE Journal of Solid-State Circuits Jg. 39 (2004) Nr. 10, S. 1697 - 1705
  • Houtsma, Vincent E.; Chen, Jianxin; Frackoviak, John; Hu, Tingchen; Kopf, Rose F.; Reyes, Roberto R.; Tate, Alaric I.; Yang, Yang; Weimann, Nils; Chen, Young Kai
    Self-heating of submicrometer InP-InGaAs DHBTs
    In: IEEE Electron Device Letters Jg. 25 (2004) Nr. 6, S. 357 - 359
  • Lin, Jie; Leven, Andreas; Weimann, Nils; Yang, Yang; Kopf, Rose F.; Reyes, Roberto R.; Chen, Young Kai; Choa, Fow-Sen
    Smooth and vertical-sidewall InP etching using Cl2/N2 inductively coupled plasma
    In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Jg. 22 (2004) Nr. 2, S. 510
  • Hsu, Julia W.P.; Weimann, Nils; Manfra, Michael J.; West, Kenneth W.; Lang, David V.; Schrey, Frederic F.; Mitrofanov, Oleg; Molnar, Richard J.
    Effect of dislocations on local transconductance in AlGaN/GaN heterostructures as imaged by scanning gate microscopy
    In: Applied Physics Letters (APL) Jg. 83 (2003) Nr. 22, S. 4559 - 4561
  • Ng, Hock M.; Weimann, Nils; Chowdhury, Aref
    GaN nanotip pyramids formed by anisotropic etching
    In: Journal of Applied Physics Jg. 94 (2003) Nr. 1, S. 650 - 653
  • Manfra, Michael J.; Weimann, Nils; Mitrofanov, Oleg; Waechtler, Thomas; Tennant, Donald M.
    High power GaN/AlGaN/GaN HEMTs operating at 2 to 25 GHz grown by plasma-assisted MBE
    In: Physica Status Solidi (A) - Applications and Materials Science Jg. 200 (2003) Nr. 1, S. 175 - 178
  • Mitrofanov, Oleg; Manfra, Michael; Weimann, Nils
    Impact of Si doping on radio frequency dispersion in unpassivated GaN/AlGaN/GaN high-electron-mobility transistors grown by plasma-assisted molecular-beam epitaxy
    In: Applied Physics Letters (APL) Jg. 82 (2003) Nr. 24, S. 4361 - 4363
  • Ng, Hock M.; Parz, Wolfgang; Weimann, Nils; Chowdhury, Aref
    Patterning GaN microstructures by polarity-selective chemical etching
    In: Japanese Journal of Applied Physics (JJAP): Part 2: Letters Jg. 42 (2003) Nr. 12 A, S. L1405 - L1407
  • Chowdhury, Aref; Ng, Hock M.; Bhardwaj, Manish; Weimann, Nils
    Second-harmonic generation in periodically poled GaN
    In: Applied Physics Letters (APL) Jg. 83 (2003) Nr. 6, S. 1077 - 1079
  • Weiner, Joseph S.; Leven, Andreas; Houtsma, Vincent; Baeyens, Yves; Chen, Young-Kai; Paschke, Peter; Yang, Yang; Frackoviak, John; Sung, Wei-Jer; Tate, Alaric; Reyes, Roberto; Kopf, Rose F.; Weimann, Nils
    SiGe Differential Transimpedance Amplifier with 50-GHz Bandwidth
    In: IEEE Journal of Solid-State Circuits Jg. 38 (2003) Nr. 9, S. 1512 - 1517
  • Weimann, Nils; Manfra, Michael J.; Wächtler, Thomas
    Unpassivated AlGaN-GaN HEMTs with minimal RF dispersion grown by plasma-assisted MBE on semi-insulating 6H-SiC substrates
    In: IEEE Electron Device Letters Jg. 24 (2003) Nr. 2, S. 57 - 59
  • Manfra, Michael J.; Weimann, Nils; Baeyens, Yves; Roux, Pascal; Tennant, Donald M.
    Unpassivated AlGaN/GaN HEMTs with CW power density of 3.2W/mm at 25 GHz grown by plasma-assisted MBE
    In: Electronics Letters Jg. 39 (2003) Nr. 8, S. 694 - 695
  • Manfra, Michael J.; Weimann, Nils; Hsu, Julia W.P.; Pfeiffer, Loren N.; West, Kenneth W.; Chu, Sung Nee George
    Dislocation and morphology control during molecular-beam epitaxy of AlGaN/GaN heterostructures directly on sapphire substrates
    In: Applied Physics Letters (APL) Jg. 81 (2002) Nr. 8, S. 1456 - 1458
  • Manfra, Michael J.; Weimann, Nils; Hsu, Julia W.P.; Pfeiffer, Loren N.; West, Kenneth W.; Syed, Sheyum; Störmer, Horst L.; Pan, Wei; Lang, David V.; Chu, Sung Nee George; Kowach, Glen R.; Sergent, Arthur Michael; Caissie, Janice M.; Molvar, Karen M.; Mahoney, Leonard J.; Molnar, Richard J.
    High mobility AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy on semi-insulating GaN templates prepared by hydride vapor phase epitaxy
    In: Journal of Applied Physics Jg. 92 (2002) Nr. 1, S. 338 - 345
  • Weimann, Nils; Manfra, Michael J.; Chakraborty, Subhasish; Tennant, Donald M.
    Submicron AlGaN/GaN HEMTs with very high drain current density grown by plasma-assisted MBE on 6H-SiC
    In: IEEE Electron Device Letters Jg. 23 (2002) Nr. 12, S. 691 - 693
  • Kopf, Rose F.; Melendes, Robert; Jacobson, Dale C.; Tate, Alaric I.; Melendes, Melissa A.; Reyes, Roberto R.; Hamm, Robert A.; Yang, Yang; Frackoviak, John; Weimann, Nils; Maynard, Helen L.; Liu, Chun-Ting;
    Thin-film resistor fabrication for InP technology applications
    20th North American Conference on Molecular Beam Epitaxy; Providence, United States; 1 - 3 October 2001,
    In: Journal of Vacuum Science and Technology (JVST) B: Nanotechnology and Microelectronics Jg. 20 (2002) Nr. 3, S. 871 - 875
  • Eastman, Lester F.; Tilak, Vinayak; Smart, Joseph A.; Green, Bruce M.; Chumbes, Eduardo Martin; Dimitrov, Roman; Kim, Hyungtak; Ambacher, Oliver S.; Weimann, Nils; Prunty, Thomas R.; Murphy, M.; Schaff, William J.; Shealy, James Richard
    Undoped AlGaN/GaN HEMTs for microwave power amplification
    In: IEEE Transactions on Electron Devices (T-ED) Jg. 48 (2001) Nr. 3, S. 479 - 485
  • Baeyens, Yves; Dorschky, Claus; Weimann, Nils; Lee, Qinghung; Kopf, Rose; Georgiou, George; Mattia, John-Paul; Hamm, Robert; Chen, Young-Kai
    Compact InP-based HBT VCOs with a wide tuning range at W- and D-band
    In: IEEE Transactions on Microwave Theory and Techniques Jg. 48 (2000) Nr. 12, S. 2403 - 2408
  • Ambacher, Oliver; Foutz, Brian Edward; Smart, Joseph A.; Shealy, James Richard; Weimann, Nils; Chu, Kenneth K.; Murphy, M.; Sierakowski, Andrej J.; Schaff, William J.; Eastman, Lester F.; Dimitrov, Roman; Mitchell, A.; Stutzmann, Martin
    Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
    In: Journal of Applied Physics Jg. 87 (2000) Nr. 1, S. 334 - 344
  • Smart, Joseph A.; Schremer, Alfred T.; Weimann, Nils; Ambacher, Oliver; Eastman, Lester F.; Shealy, James Richard
    AlGaN/GaN heterostructures on insulating AlGaN nucleation layers
    In: Applied Physics Letters (APL) Jg. 75 (1999) Nr. 3, S. 388 - 390
  • Ambacher, Oliver; Dimitrov, Roman; Stutzmann, Martin; Foutz, Brian Edward; Murphy, M.J.; Smart, Joseph A.; Shealy, James Richard; Weimann, Nils; Chu, Kenneth K.; Chumbes, M.; Green, Bruce M.; Sierakowski, Andrej J.; Schaff, William J.; Eastman, Lester F.
    Role of spontaneous and piezoelectric polarization induced effects in group-III nitride based heterostructures and devices
    In: Physica Status Solidi (B) - Basic Solid State Physics Jg. 216 (1999) Nr. 1, S. 381 - 389
  • Ambacher, Oliver; Smart, Joseph A.; Shealy, James Richard; Weimann, Nils; Chu, Kenneth K.; Murphy, M.; Schaff, William J.; Eastman, Lester F.; Dimitrov, Roman; Wittmer, L.; Stutzmann, Martin; Rieger, Walter; Hilsenbeck, Jochen
    Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- And Ga-face AIGaN/GaN heterostructures
    In: Journal of Applied Physics Jg. 85 (1999) Nr. 6, S. 3222 - 3233
  • Weimann, Nils; Eastman, Lester F.; Doppalapudi, Dharanipal; Ng, Hock M.; Moustakas, Theodore D.
    Scattering of electrons at threading dislocations in GaN
    In: Journal of Applied Physics Jg. 83 (1998) Nr. 7, S. 3656 - 3659
  • Ng, Hock Min; Doppalapudi, Dharanipal; Moustakas, Theodore D.; Weimann, Nils; Eastman, Lester F.
    The role of dislocation scattering in n-type GaN films
    In: Applied Physics Letters (APL) Jg. 73 (1998) Nr. 6, S. 821 - 823
  • Beiträge in Sammelwerken und Tagungsbänden

  • Preuß, Christian; Mutlu, Enes; Daedler, Ben; Abts, Jonathan; Watermann, Jonas; Weimann, Nils;
    Preuß, Christian (Hrsg.)
    Battery Powered Compact and Lightweight RTD THz Oscillator Module
    In: Proceedings of the 15th German Microwave Conference (GeMiC 2024) / 15th German Microwave Conference (GeMiC 2024): 11-13 March 2024; Duisburg, Germany / Institute of Electrical and Electronics Engineers (IEEE) (Hrsg.) 2024
  • Mutlu, Enes; Watermann, Jonas; Abts, Jonathan; Tek, Özgül; Preuß, Christian; Kreß, Robin; Sievert, Benedikt; Erni, Daniel; Rennings, Andreas; Weimann, Nils
    Bias-Dependent Spectrum Analysis of Highly Nonlinear Resonant Tunneling Diode Oscillators
    In: Proceedings of the 15th German Microwave Conference (GeMiC 2024) / 15th German Microwave Conference (GeMiC 2024): 11-13 March 2024; Duisburg, Germany / Institute of Electrical and Electronics Engineers (IEEE) (Hrsg.) 2024
  • Kreß, Robin; Mutlu, Enes; Song, Bo; Poßberg, Alexander; Clochiatti, Simone; Weimann, Nils
    Investigation of Mutual Injection Locking on Resonant-Tunneling-Diode Oscillators
    In: Proceedings of the 15th German Microwave Conference (GeMiC 2024) / 15th German Microwave Conference (GeMiC 2024): 11-13 March 2024; Duisburg, Germany / Institute of Electrical and Electronics Engineers (IEEE) (Hrsg.) 2024
  • Müller, Konrad; Preuß, Christian; Kreß, Robin; Mutlu, Enes; Weimann, Nils
    Rectangular Waveguide to Coplanar Waveguide Transition for 110 to 170 GHz
    In: Proceedings of the 15th German Microwave Conference (GeMiC 2024) / 15th German Microwave Conference (GeMiC 2024): 11-13 March 2024; Duisburg, Germany / Institute of Electrical and Electronics Engineers (IEEE) (Hrsg.) 2024
  • Zhang, Meng; Tian, Zhenming; Sievert, Benedikt; Preuß, Christian; Weimann, Nils; Rennings, Andreas; Erni, Daniel
    Antenna for Free Space-coupled Third-order Sub-harmonic Coherent Detector Array in the 300 GHz Band
    In: 2023 48th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) / 48th International Conference on Infrared, Millimeter, and Terahertz Waves ; IRMMW-THz 2023 ; 17 -22 September 2023, Montreal, Quebec, Canada / Cooke, David G. (Hrsg.) 2023
  • Shanin, Nikita; Clochiatti, Simone; Mayer, Kenneth M.; Cottatellucci, Laura; Weimann, Ph.D., Nils; Schober, Robert
    Average Harvested Power in THz WPT Systems Employing Resonant-Tunnelling Diodes
    In: 2023 Sixth International Workshop on Mobile Terahertz Systems (IWMTS) / Sixth International Workshop on Mobile Terahertz Systems (IWMTS), 03-05 July 2023, Bonn, Germany 2023
  • Clochiatti, Simone; Kress, Robin; Mutlu, Enes; Vogelsang, Florian; Delden, Marcel Van; Pohl, Nils; Prost, Werner; Weimann, Nils
    InP RTD Detector for THz Applications
    In: 18th European Microwave Integrated Circuits Conference (EuMIC): Proceedings / 18th European Microwave Integrated Circuits Conference (EuMIC), 18.-19.09.2023, Berlin, Germany 2023, S. 325 - 328
  • Mutlu, Enes; Li, Wen; Sievert, Benedikt; Kreß, Robin; Clochiatti, Simone; Rennings, Andreas; Grygoriev, Anton; Prost, Werner; Erni, Daniel; Weimann, Nils
    Investigation of RTD THz Oscillator with Wide Frequency Tuning Capability
    In: 2023 48th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) / 48th International Conference on Infrared, Millimeter, and Terahertz Waves ; IRMMW-THz 2023 ; 17 -22 September 2023, Montreal, Quebec, Canada / Cooke, David G. (Hrsg.) 2023
  • Mutlu, Enes; Clochiatti, Simone; Sievert, Benedikt; Kreß, Robin; Poßberg, Alexander; Zhang, Meng; Preuß, Christian; Zhang, Ao; Prost, Werner; Erni, Daniel; Weimann, Ph.D., Nils
    Large-Signal Device Model Verification for Resonant Tunneling Diode Oscillator
    In: 2023 Sixth International Workshop on Mobile Terahertz Systems (IWMTS) / Sixth International Workshop on Mobile Terahertz Systems (IWMTS), 03-05 July 2023, Bonn, Germany 2023
  • Preuß, Christian; Clochiatti, Simone; Kreß, Robin; Mutlu, Enes; Vogelsang, Florian; Prost, Werner; Pohl, Nils; Weimann, Nils
    Packaging Technology for the Realization of Tx and Rx Modules Based on RTD Devices
    In: 2023 48th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) / 48th International Conference on Infrared, Millimeter, and Terahertz Waves ; IRMMW-THz 2023 ; 17 -22 September 2023, Montreal, Quebec, Canada / Cooke, David G. (Hrsg.) 2023
  • Poßberg, Alexander; Vogelsang, Florian; Pohl, Nils; Hossain, Maruf; Yacoub, Hady; Johansen, Tom K.; Heinrich, Wolfgang; Weimann, Nils
    An Injection-Lockable InP-DHBT Source Operating at 421 GHz with -2.4 dBm Output Power and 1.7% DC-to-RF Efficiency
    In: 2022 IEEE/MTT-S International Microwave Symposium / 2022 IEEE/MTT-S International Microwave Symposium, 19-24 June 2022, Denver / Institute of Electrical and Electronics Engineers (IEEE) (Hrsg.) 2022, S. 336 - 339
  • Preuss, Christian; Mutlu, Enes; Kress, Robin; Clochiatti, Simone; Lu, Peng; Stöhr, Andreas; Prost, Werner; Weimann, Nils
    FR4 Test Board for Measurements on InP Resonant Tunneling Diode THz Oscillators Integrated via Flip Chip Bonding Technology
    In: 2022 15th UK-Europe-China Workshop on Millimetre-Waves and Terahertz Technologies (UCMMT) / UCMMT2022: 15th UK-Europe-China Workshop on Millimeter-Waves and Terahertz Technologies; 17-18 October 2022; Tønsberg, Norway (online) / Institute of Electrical and Electronics Engineers (IEEE) (Hrsg.) 2022
  • Clochiatti, Simone; Yavari, Parya; Schmidt, Robin; Hauser, Patrick; Mutlu, Enes; Preus, Christian; Prost, Werner; Weimann, Ph.D., Nils
    Monolithic n+-InGaAs Thin Film Resistor from DC up to 0.5 THz
    In: 2022 Fifth International Workshop on Mobile Terahertz Systems (IWMTS): Proceedings / Fifth International Workshop on Mobile Terahertz Systems (IWMTS), 04.-06.07.2022, Duisburg 2022
  • Clochiatti, Simone; Schmidt, Robin; Mutlu, Enes; Dieudonne, Michael; Prost, Werner; Schreurs, Dominique; Weimann, Nils
    On-Wafer Characterization and Modelling of InP Resonant Tunnelling Diodes up to 500 GHz
    In: Proceedings of the 52nd European Microwave Conference (EuMC) / 52nd European Microwave Conference (EuMC): 27-29 September 2022; Milan, Italy 2022 9924370
  • Müller, Konrad; Poßberg, Alexander; Coers, M.; Zhang, Hao; Weimann, Ph.D., Nils
    TCAD Simulation of InP DHBTs With an In53.2Ga46.8As Base and InGaAsP Collector Grading
    In: 2022 Fifth International Workshop on Mobile Terahertz Systems (IWMTS): Proceedings / Fifth International Workshop on Mobile Terahertz Systems (IWMTS), 04.-06.07.2022, Duisburg 2022
  • Kreß, Robin; Mutlu, Enes; Kubiczek, Tobias; Kossmann, J.; Preuß, Christian; Schultze, Thorsten; Balzer, Jan C.; Prost, Werner; Weimann, Ph.D., Nils
    Transfer-Substrate Process for InP RTD-Oscillator Characterization
    In: 2022 Fifth International Workshop on Mobile Terahertz Systems (IWMTS): Proceedings / Fifth International Workshop on Mobile Terahertz Systems (IWMTS), 04.-06.07.2022, Duisburg 2022
  • Prost, Werner; Arzi, Khaled; Clochiatti, Simone; Mutlu, Enes; Suzuki, Safurni; Asad, Mohsen; Weimann, Nils
    Triple Barrier Resonant Tunneling Diodes for THz emission and sensing
    In: Proceedings of the SPIE Optical Engineering + Applications Conference 2022: Terahertz Emitters, Receivers, and Applications / Razeghi, Manijeh; Baranov, Alexei N.; SPIE Optical Engineering + Applications Conference 2022; 21 - 22 August 2022; San Diego, USA 2022 122300D
  • Clochiatti, Simone; Mutlu, Enes; Preuß, Christian; Kreß, Robin; Prost, Werner; Weimann, Nils
    Broadband THz detection using InP triple-barrier resonant tunneling diode with integrated antenna
    In: Proceedings of the 4th International Workshop on Mobile Terahertz Systems / IWMTS 2021; 5-6 July 2021; Essen, Germany 2021 9486794
  • Zhang, Meng; Wang, Peng-Yuan; Rennings, Andreas; Clochiatti, Simone; Prost, Werner; Weimann, Nils; Erni, Daniel
    Design of a 1-to-4 subarray element for wireless subharmonic injection in the THz band
    In: Proceedings of the 4th International Workshop on Mobile Terahertz Systems / IWMTS 2021; 5-6 July 2021; Essen, Germany 2021 9486781
  • Kreß, Robin; Preuß, Christian; Mutlu, Enes; Clochiatti, Simone; Prost, Werner; Weimann, Nils
    THz detectors and emitters with On-Chip antenna aligned on hyper-hemispherical silicon lenses
    In: Proceedings of the 4th International Workshop on Mobile Terahertz Systems / IWMTS 2021; 5-6 July 2021; Essen, Germany 2021
  • Poßberg, Alexander; Hossain, Maruf; Weimann, Nils
    Design of a 300 GHz externally Injection-Lockable Push-Push Oscillator for Beam Steering Applications
    In: 3rd International Workshop on Mobile Terahertz Systems / IWMTS 2020; Essen, Germany; 1-2 July 2020 2020, S. 9166388
  • Blumberg, Christian; Häuser, Patrick; Wefers, Fabian; Meier, Johanna; Bacher, Gerd; Weimann, Nils; Prost, Werner
    Growth of site- And polarity-controlled GaN nanowires on Silicon for high-speed LEDs
    In: 8th GMM-Workshops on Micro-Nano-Integration / Virtual, Online; ; 15 - 17 September 2020 2020, S. 60 - 64
  • Weimann, Nils
    InP HBT technology for THz applications
    In: IEEE International Symposium on Radio-Frequency Integration Technology / RFIT 2020; Hiroshima, Japan; 2 - 4 September 2020 2020, S. 190 - 192
  • Clochiatti, Simone; Aikawa, Kotaro; Arzi, Khaled; Mutlu, Enes; Suhara, Michihiko; Weimann, Nils; Prost, Werner
    Large-Signal Modelling of sub-THz InP Triple-Barrier Resonant Tunneling Diodes
    In: 3rd International Workshop on Mobile Terahertz Systems / IWMTS 2020; Essen, Germany; 1-2 July 2020 2020, S. 9166270
  • Villani, Matteo; Oriols, Xavier; Clochiatti, Simone; Weimann, Nils; Prost, Werner
    The accurate predictions of THz quantum currents requires a new displacement current coefficient instead of the traditional transmission one
    In: 3rd International Workshop on Mobile Terahertz Systems / IWMTS 2020; Essen, Germany; 1-2 July 2020 2020, S. 9166410
  • Hossain, Maruf M.; Weimann, Nils; Brahem, Mohamed; Ostinelli, Olivier J.S.; Bolognesi, Colombos R.; Heinrich, Wolfgang; Krozer, Viktor
    A 0.5 THz Signal Source with -11 dBm Peak Output Power Based on InP DHBT
    In: 49th European Microwave Conference / EuMC 2019, 29 Sept. - 4 Oct. 2019, Paris, France 2019, S. 856 - 859
  • Hossain, Maruf M.; Weimann, Nils; Brahem, Mohamed; Ostinelli, Olivier J.S.; Bolognesi, Colombos R.; Heinrich, Wolfgang; Krozer, Viktor
    A 0.5 THz Signal Source with -11 dBm Peak Output Power Based on InP DHBT
    In: 14th European Microwave Integrated Circuits Conference / EuMW 2019, 29 Sep - 4 Oct 2019, Paris 2019, S. 302 - 305
  • Arzi, Khaled; Clochiatti, Simone; Mutlu, Enes; Kowaljow, Alexander; Sievert, Benedikt; Erni, Daniel; Weimann, Nils; Prost, Werner
    Broadband detection capability of a triple barrier resonant tunneling diode
    In: 2nd International Workshop on Mobile Terahertz Systems / IWMTS 2019; Bad Neuenahr, Germany; 1 - 3 July 2019 2019, S. 8823724
  • Aikawa, Kotaro; Suhara, Michihiko; Asakawa, Kiyoto; Arzi, Khaled; Weimann, Nils; Prost, Werner
    Characterization of the Effective Tunneling Time and Phase Relaxation Time in Triple-Barrier Resonant Tunneling Diodes
    In: Compound Semiconductor Week 2019 (CSW): Proceedings / CSW 2019; Nara, Japan; 19 - 23 May 2019 2019, S. 8819043
  • Weimann, Nils; Arzi, Khaled; Clochiatti, Simone; Prost, Werner
    Indiumphosphid-Resonante Tunneldioden für THz-Anwendungen
    In: MikroSystemTechnik Kongress 2019: Mikroelektronik | MEMS-MOEMS | Systemintegration – Säulen der Digitalisierung und künstlichen Intelligenz / 28. – 30. Oktober 2019 in Berlin 2019, S. 400 - 403
  • Zhang, Meng; Rennings, Andreas; Clochiatti, Simone; Arzi, Khaled; Prost, Werner; Weimann, Nils; Erni, Daniel
    Transmitarray element design for subharmonic injection-locked RTD oscillators in THz band
    In: Progress in Electromagnetics Research Symposium - Fall (PIERS - FALL): Proceedings / Fall 2019; Xiamen, China; 17 - 20 December 2019 2019, S. 2518 - 2522
  • Arzi, Khaled; Clochiatti, Simone; Suzuki, Safumi; Rennings, Andreas; Erni, Daniel; Weimann, Nils; Asada, Masahiro; Prost, Werner
    Triple-Barrier Resonant-Tunnelling Diode THz Detectors with on-chip antenna
    In: GeMiC 2019 - 12th German Microwave Conference / GeMiC 2019; Stuttgart, Germany; 25 - 27 March 2019 2019, S. 17 - 19
  • Shivan, Tanjil; Weimann, Nils; Hossain, Maruf; Johansen, Tom Keinicke; Stoppel, Dimitri; Schulz, Steffen; Ostinelli, Olivier; Doerner, Ralf; Bolognesi, Colombro R.; Krozer, Viktor; Heinrich, Wolfgang
    A 95 GHz bandwidth 12 dBm output power distributed amplifier in InP-DHBT technology for optoelectronic applications
    In: GeMiC 2018 - 11th German Microwave Conference / GeMiC 2018; Freiburg, Germany; 12 - 14 March 2018 2018, S. 17 - 20
  • Hossain, Maruf; Eissa, Mohamed H.; Hrobak, Michael; Stoppel, Dimitri; Weimann, Nils; Malignaggi, Andrea; Mai, Andreas; Kissinger, Dietmar; Heinrich, Wolfgang; Krozer, Viktor
    A Hetero-Integrated W-Band Transmitter Module in InP-on-BiCMOS Technology
    In: Proceedings of the 13th European Microwave Integrated Circuits Conference / EuMIC 2018; Madrid, Spain; 24 - 25 September 2018 2018, S. 97 - 100
  • Shivan, Tanjil; Hossain, Maruf M.; Stoppel, Dimitri; Weimann, Nils; Schulz, Steffen; Doerner, Ralf; Krozer, Viktor; Heinrich, Wolfgang
    An Ultra-Broadband Low-Noise Distributed Amplifier in InP DHBT Technology
    In: Proceedings of the 13th European Microwave Integrated Circuits Conference / EuMIC 2018; Madrid, Spain; 24 - 25 September 2018 2018, S. 241 - 244
  • Shivan, Tanjil; Hossain, Maruf; Stoppel, I.D.; Weimann, Nils; Schulz, Steffen; Doerner, Ralf; Krozer, Viktor; Heinrich, Wolfgang
    An Ultra-broadband Low-Noise Distributed Amplifier in InP DHBT Technology
    In: Proceedings of the 48th European Microwave Conference / EuMC 2018; Madrid, Spain; 25 - 27 September 2018 2018, S. 1209 - 1212
  • Hossain, Maruf; Weimann, Nils; Heinrich, Wolfgang; Krozer, Viktor
    Highly Efficient D-Band Fundamental Frequency Source Based on InP-DHBT Technology
    In: Proceedings of the 48th European Microwave Conference / EuMC 2018; Madrid, Spain; 25 - 27 September 2018 2018, S. 1005 - 1008
  • Arzi, Khaled; Rennings, Andreas; Erni, Daniel; Weimann, Nils; Prost, Werner; Suzuki, Safurni; Asada, Masahiro
    Millimeter-wave Signal Generation and Detection via the same Triple Barrier RTD and on-chip Antenna
    In: Proceedings of the 1st International Workshop on Mobile Terahertz Systems / IWMTS 2018, Duisburg, Germany, 2 - 4 July 2018 2018, S. 8454700
  • Arzi, Khaled; Suzuki, Safumi; Rennings, Andreas; Erni, Daniel; Weimann, Nils; Asada, Masahiro; Prost, Werner
    Triple barrier RTD integrated in a slot antenna for mm-wave signal generation and detection
    In: Compound Semiconductor Week (CSW 2018) / 14th Int. Symposium on Compound Semiconductors (ISCS), and the 30th Int. Conference on Indium Phosphide and Related Materials (IPRM), May 29 – June 1, 2018, Massachussetts Institute of Technology (MIT), Cambridge, MA, USA 2018, S. 54
  • Hossain, Maruf M.; Meliani, Chafik; Schukfeh, Muhammed Ihab; Weimann, Nils; Lisker, Marco; Krozer, Viktor; Heinrich, Wolfgang
    An active balanced up-converter module in InP-on-BiCMOS technology
    In: IEEE MTT-S International Microwave Symposium / IMS 2017; Honololu, United States; 4 - 9 June 2017 2017, S. 953 - 956
  • Johansen, Tom K.; Weimann, Nils; Doerner, Ralf; Hossain, Maruf; Krozer, Viktor; Heinrich, Wolfgang
    EM simulation assisted parameter extraction for the modeling of transferred-substrate InP HBTs
    In: Proceedings of the 12th European Microwave Integrated Circuits Conference / EuMIC 2017; Nuremburg; Germany; 9 - 12 October 2017 2017, S. 240 - 243
  • Kaule, Evelyne; Doerner, Ralf; Weimann, Nils; Rudolph, Matthias
    Noise modeling of transferred-substrate InP-DHBTs
    In: IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems / COMCAS 2017; Tel-Aviv, Israel; 13 - 15 November 2017 2017, S. 1 - 4
  • Hossain, Maruf; Weimann, Nils; Krozer, Viktor; Heinrich, Wolfgang
    A 100 GHz fundamental oscillator with 25% efficiency based on transferred-substrate InP-DHBT technology
    In: Proceedings of the 46th European Microwave Conference / EuMIC 2016; London, United Kingdom; 3 - 4 October 2016 2016, S. 497 - 500
  • Al-Sawaf, Thualfiqar; Nosaeva, Ksenia; Weimann, Nils; Krozer, Viktor; Heinrich, Wolfgang
    A 200 mW InP DHBT W-band power amplifier in transferred-substrate technology with integrated diamond heat spreader
    In: IEEE MTT-S International Microwave Symposium Digest / IMS 2016; San Francisco, United States; 22 - 27 May 2016 2016, S. 7540164
  • Hossain, Maruf M.; Weimann, Nils; Krozer, Viktor; Heinrich, Wolfgang
    A 315 GHz reflection-type push-push oscillator in inp-DHBT technology
    In: Proceedings of the 46th European Microwave Conference / EuMIC 2016; London, United Kingdom; 3 - 4 October 2016 2016, S. 485 - 488
  • Hossain, Maruf M.; Nosaeva, Ksenia S.; Weimann, Nils; Krozer, Viktor; Heinrich, Wolfgang
    A 330 GHz active frequency quadrupler in InP DHBT transferred-substrate technology
    In: IEEE MTT-S International Microwave Symposium Digest / IMS 2016; San Francisco, United States; 22 -27 May 2016 2016, S. 7540049
  • Wentzel, Andreas; Hossain, Maruf; Stoppel, Dimitri; Weimann, Nils; Krozer, Viktor; Heinrich, Wolfgang
    An efficient W-band InP DHBT digital power amplifier
    In: Proceedings of the 11th European Microwave Integrated Circuits Conference / EuMIC 2016; London, United Kingdom; 3 - 4 October 2016 2016, S. 21 - 24
  • Johansen, Tom K.; Thualfiqar, Al-Sawaf; Weimann, Nils; Heinrich, Wolfgang; Krozer, Viktor
    Balanced G-band Gm-boosted frequency doublers in transferred substrate InP HBT technology
    In: Proceedings of the 11th European Microwave Integrated Circuits Conference / EuMIC 2016; London, United Kingdom; 3 - 4 October 2016 2016, S. 89 - 92
  • Hossain, Maruf M.; Weimann, Nils; Janke, Bernd; Lisker, Marco; Meliani, Chafik; Tillack, Bernd; Kruger, Olaf; Krozer, Viktor; Heinrich, Wolfgang
    A 250 GHz hetero-integrated VCO with 0.7 mW output power in InP-on-BiCMOS technology
    In: Proceedings of the 45th European Microwave Conference: European Microwave Week 2015: "Freedom Through Microwaves" / EuMC 2015; Paris, France; 7 - 10 September 2015 2015, S. 391 - 394
  • Hossain, Maruf M.; Nosaeva, Ksenia S.; Janke, Bernd; Weimann, Nils; Krueger, Olaf; Krozer, Viktor; Heinrich, Wolfgang
    An efficient 290 GHz harmonic oscillator in transferred-substrate InP-DHBT technology
    In: Proceedings of the 45th European Microwave Conference: European Microwave Week 2015: "Freedom Through Microwaves" / EuMC 2015; Paris, France; 7 - 10 September 2015 2015, S. 841 - 844
  • Al-Sawaf, Thualfiqar; Hossain, Maruf M.; Weimann, Nils; Kruger, Olaf; Krozer, Viktor; Heinrich, Wolfgang
    G-band frequency doubler based on InP transferred-substrate technology
    In: Proceedings of the 10th European Microwave Integrated Circuits Conference / EuMIC 2015; Paris, France; 7 - 8 September 2015 2015, S. 61 - 64
  • Lisker, Marco; Trusch, Andreas; Krüger, Andreas; Fraschke, Mirko; Tillack, Bernd; Weimann, Nils; Ostermay, Ina; Krüger, Olaf
    Silicon nitride stop layer in back-end-of-line planarization for wafer bonding application
    In: Proceedings of International Conference on Planarization/CMP Technology 2014 / ICPT 2014; Kobe, Japan; 19 - 21 November 2014 2015, S. 109 - 115
  • Hossain, Maruf M.; Weimann, Nils; Krueger, Olaf; Krozer, Viktor; Heinrich, Wolfgang
    A 270 GHz push-push oscillator in InP-DHBT-on-BiCMOS technology
    In: Proceedings of the 44th European Microwave Conference: "European Microwave Week 2014": Connecting the Future / EuMC 2014 - Held as Part of the 17th European Microwave Week, EuMW 2014; Rome, Italy; 6 - 9 October 2014; EuMC 2014 - Held as Part of the 17th European Microwave Week, EuMW 2014; Rome, Italy; 6 - 9 October 2014 2014, S. 588 - 591
  • Krozer, Viktor; Doerner, Ralf; Schmuckle, Franz-Josef; Weimann, Nils; Heinrich, Wolfgang; Rumiantsev, Andrej; Lisker, Marco; Tillack, Bernd
    On-wafer small-signal and large-signal measurements up to sub-THz frequencies
    In: Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting / BCTM 2014; Coronado, United States; 28 September - 1 October 2014 2014, S. 163 - 170
  • Krozer, Viktor; Jensen, Thomas J.; Kramer, Tomas; Ostermay, Ina; Weimann, Nils; Schmuckle, Franz Josef; Krüger, Olaf; Heinrich, Wolfgang; Lisker, Marco; Elkhouly, Mohamed; Glišić, Srdjan; Tillack, Bernd; Meliani, Chafik
    InP on BiCMOS technology platform for millimeter-wave and THz MMIC
    In: 6th UK, Europe, China Millimeter Waves and THz Technology Workshop / UCMMT 2013; Rome, Italy; 9 - 11 September 2013 2013, S. 6641505
  • Johansen, Tom K.; Rudolph, Matthias; Jensen, Thomas; Kraemer, Tomas; Weimann, Nils; Schnieder, Frank; Krozer, Viktor; Heinrich, Wolfgang
    Modeling of InP HBTs in transferred-substrate technology for millimeter-wave applications
    In: European Microwave Week 2013 - 8th European Microwave Integrated Circuits Conference: Proceedings / EuMW 2013; Nuremberg, Germany; 6 - 8 October 2013; EuMIC 2013; Nuremberg, Germany; 6 - 8 October 2013 2013, S. 280 - 283
  • Houtsma, Vincent; Hu, Tingchen; Weimann, Nils; Kopf, Rose F.; Tate, Alaric I.; Frackoviak, John; Reyes, Roberto R.; Chen, Young Kai; Zhang, Liming
    A 1 W linear high-power InP balanced uni-traveling carrier photodetector
    In: Proceedings of the 37th European Conference and Exposition on Optical Communications / ECOC 2011; 18 - 22 September 2011; Geneva, Switzerland 2011, S. 6065980
  • Houtsma, Vincent; Hu, Tingchen; Weimann, Nils; Kopf, Rose F.; Tate, Alaric I.; Frackoviak, John; Reyes, Roberto R.; Chen, Young Kai; Zhang, Liming
    High-power linear balanced InP photodetectors for coherent analog optical links
    In: IEEE Avionics, Fiber- Optics and Photonics Technology Conference / AVFOP 2011; San Diego, United States; 4 - 6 October 2011 2011, S. 95 - 96
  • Hu, Ting-Chen; Weimann, Nils; Houtsma, Vincent E.; Kopf, Rose F.; Tate, Alaric I.; Frackoviak, John; Reyes, Roberto R.; Chen, Young Kai; Achouche, Mohand; Lelarge, Franҫois
    High-yield manufacturing of InP dual-port coherent receiver photonic integrated circuits for 100G PDM-QPSK application
    In: 23rd International Conference on Indium Phosphide and Related Materials: Conference Proceedings / CSW/IPRM 2011; Berlin, Germany; 22 - 26 May 2011 2011, S. 5978304
  • Houtsma, Vincent; Weimann, Nils; Hu, Tingchen; Kopf, Rose F.; Tate, Alaric I.; Frackoviak, John; Reyes, Roberto R.; Chen, Young Kai; Zhang, Liming; Doerr, Christopher Richard; Neilson, David T.
    Manufacturable monolithically integrated InP dual-port coherent receiver for 100G PDM-QPSK applications
    In: Optical Fiber Communication Conference and Exposition and the National Fiber Optic Engineers Conference / OFC/NFOEC 2011; Los Angeles, United States; 6 - 10 March 2011 2011, S. 5875296
  • Weimann, Nils; Houtsma, Vincent E.; Baeyens, Yves; Weiner, Joseph S.; Tate, Alaric I.; Frackoviak, John; Chen, Young Kai
    InP DHBT circuits for 100 Gb/s ethernet applications
    In: 20th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM 2008; Versailles, France; 25 - 29 May 2008 2008, S. 4702916
  • Chen, Young Kai; Leven, Andreas; Hu, Tingchen; Weimann, Nils; Kopf, Rose F.; Tate, Alaric I.
    Integrated photonic digital-to-analog converter for arbitrary waveform generation
    In: International Conference on Photonics in Switching / PS 2008; Sapporo, Japan; 4 -7 August 2008 2008, S. 4804271
  • Chen, Young Kai; Leven, Andreas; Hu, Tingchen; Weimann, Nils; Tu, Kun Yii; Houtsma, Vincent E.; Kopf, Rose F.; Tate, Alaric I.
    Photonic generation of microwave and millimeter-wave arbitrary waveforms
    In: 21st Annual Meeting of the IEEE Lasers and Electro-Optics Society: Conference Proceedings / LEOS 2008; Newport Beach, United States; 9 - 13 November 2008 2008, S. 419 - 420
  • Weimann, Nils; Houtsma, Vincent E.; Yang, Yang; Frackoviak, John; Tate, Alaric I.; Chen, Young Kai
    Fully dry-etched InP Double-Hetero Bipolar Transistors with ft > 400 GHz
    In: 64th Device Research Conference / DRC 2006; State College, USA; 26-28 June 2006 2007, S. 89 - 90
  • Mitrofanov, Oleg; Schmult, Stefan; Manfra, Michael J.; Siegrist, Theo M.; Weimann, Nils; Sergent, Arthur Michael; Molnar, Richard J.
    High quality UV AlGaN/AlGaN distributed Bragg reflectors and microcavities
    In: Gallium Nitride Materials and Devices II / Integrated Optoelectronic Devices 2007; San Jose, United States; 22 - 25 January 2007 2007, S. 64731G
  • Leven, Andreas; Yang, Y.; Kopf, Rose F.; Tate, Alaric I.; Hu, Tingchen; Frackoviak, John; Reyes, Roberto R.; Weimann, Nils; Chen, Young Kai; DeSalvo, Richard J.; Burdge, Geoffrey L.; Deibner, G.; Quinlan, Franklyn J.; Gee, Sangyoun; Delfyett, Peter J.
    High speed arbitrary waveform generation and processing using a photonic digital-to-analog converter
    In: IEEE Lasers and Electro-Optics Society (LEOS) Summer Topical Meeting / LEOS Summer Topicals 2007; Portland, United States; 23 - 25 July 2007 2007, S. 174 - 175
  • Baeyens, Yves; Weimann, Nils; Houtsma, Vincent E.; Weiner, Joseph S.; Yang, Yang; Frackoviak, John; Roux, Pascal; Tate, Alaric I.; Chen, Young Kai
    Highly efficient harmonically tuned InP D-HBT push-push oscillators operating up to 287 GHz
    In: IEEE MTT-S International Microwave Symposium / IMS 2007; Honolulu, United States; 3 - 8 June 2007 2007, S. 341 - 344
  • Houtsma, Vincent E.; Weimann, Nils; Tate, Alaric I.; Frackoviak, John; Chen, Young Kai
    InP single-ended transimpedance amplifier with 92-GHz transimpedance bandwidth
    In: 29th Annual IEEE Compound Semiconductor Integrated Circuit Symposium / CSIC Symposium: "Tastes of the Northwest"; Portland, United States; 14 - 17 October 2007 2007, S. 139 - 142
  • Houtsma, Vincent E.; Leven, Andreas; Chen, J.; Frackoviak, John; Tate, Alaric I.; Weimann, Nils; Chen, Young Kai
    High gain-bandwidth InP wave photransistor
    In: International Conference on Indium Phosphide and Related Materials: Conference Proceedings / Princeton, USA; 8-11 May 2006 2006, S. 247 - 251
  • Leven, Andreas; Yang, Yang; Lin, Jie S.; Kondratko, Piotr Konrad; Tate, Alaric I.; Hu, Tingchen; Weimann, Nils; Chen, Young Kai
    High speed integrated InP photonic digital-to-analog converter
    In: International Conference on Indium Phosphide and Related Materials: Conference Proceedings / Princeton, USA; 8-11 May 2006 2006, S. 14 - 15
  • Baeyens, Yves; Weimann, Nils; Houtsma, Vincent E.; Weiner, Joseph S.; Yang, Yang; Frackoviak, John; Roux, Pascal; Tate, Alaric I.; Chen, Young Kai
    Submicron InP D-HBT single-stage distributed amplifier with 17 dB gain and over 110 GHz bandwidth
    In: IEEE MTT-S International Microwave Symposium Digest / San Francisco, United States; 11 - 16 June 2006 2006, S. 818 - 821
  • Baeyens, Yves; Weimann, Nils; Houtsma, Vincent E.; Weiner, Joseph S.; Yang, Yang; Frackoviak, John; Tate, Alaric I.; Chen, Young Kai
    High-power submicron InP D-HBT push-push oscillators operating up to 215 GHz
    In: IEEE Compound Semiconductor Integrated Circuit Symposium / CSIC 2005; Palm Springs, United States; 30 October 2005 - 2 November 2005 2005, S. 208 - 211
  • Veksler, D.; Shur, M.S.; Houtsma, Vincent E.; Weimann, Nils; Chen, Young Kai
    Numerical investigation of the effect of doping profiles on the high frequency performance of InP/InGaAs super scaled HBTs
    In: Proceedings of IEEE Lester Eastman Conference on High Performance Devices 2004 / Troy, USA ; 4-6 Aug. 2004 / Leoni, Robert E. (Hrsg.) 2005
  • Baeyens, Yves; Weimann, Nils; Kopf, Rose F.; Roux, Pascal; Houtsma, Vincent E.; Yang, Yang; Tate, Alaric I.; Frackoviak, John; Weiner, Joseph S.; Paschke, Peter; Chen, Young Kai
    A high-gain InP D-HBT driver amplifier with 50 GHz bandwidth and 10 Vpp differential output swing at 40 Gb/s
    In: 25th Annual Technical Digest 2003: IEEE Gallium Arsenide Integrated Circuit (GaAs IC) Symposium / GaAs IC´03; San Diego, United States; 9 - 12 November 2003 2003, S. 153 - 156
  • Weimann, Nils; Manfra, Michael J.; Hsu, Julia W.P.; Baldwin, Kirk W.; Pfeiffer, Loren N.; West, Kenneth W.; Chu, Sung Nee George; Lang, David V.; Molnar, Richard J.
    AlGaN/GaN HEMTs grown by Molecular Beam Epitaxy on sapphire, 6H-SiC, and HVPE-GaN templates
    In: Proceedings of the Twenty-Ninth International Symposium on Compound Semiconductors / Compound Semiconductors 2002; Lausanne, Switzerland; 7 - 10 October 2002 / Ilegems, M.; Weimann, G.; Wagner, J. (Hrsg.) 2003, S. 223 - 226
  • Weiner, Joseph S.; Lee, Jaesik; Leven, Andreas; Baeyens, Yves; Houtsma, Vincent E.; Georgiou, George E.; Yang, Yang; Frackoviak, John; Tate, Alaric I.; Reyes, Roberto R.; Kopf, Rose F.; Sung, Wei Jer; Weimann, Nils; Chen, Young Kai
    An InGaAs/InP HBT differential transimpedance amplifier with 47 GHz bandwidth
    In: GaAs IC Symposium: 25th Annual Technical Digest 2003 / GaAs IC´03; San Diego, United States; 9 - 12 November 2003 2003, S. 245 - 248
  • Ng, Hock M.; Shaw, Jonathan; Chowdhury, Aref; Weimann, Nils
    Electron field emission from GaN nanotip pyramids
    In: Materials Research Society Symposium - Proceedings / GaN and Related Alloys - 2003; Boston, United States; 1 - 5 December 2003 Jg. 798 2003, S. 145 - 149
  • Waechtler, T.; Manfra, M.J.; Weimann, Nils
    High Power AlGaN/GaN HEMTs Grown by Plasma-Assisted MBE Operating at 2 to 25 GHz
    In: 61st Device Research Conference: Conference Digest / Salt Lake City, USA; 23-25 June 2003 2003, S. 61 - 62
  • Ng, Hock Min; Weimann, Nils; Chowdhury, Aref; Shaw, Jonathan L.
    Nanotip GaN pyramids formed by polarity-selective chemical etching
    In: IEEE International Symposium on Compound Semiconductors: Proceedings / ISCS 2003; San Diego, United States; 25 - 27 August 2003 2003, S. 31 - 32
  • Bell, Abigail; Smit, J.L.; Liu, Rong; Mei, Jin; Ponce, Fernando A.; Ng, Hock Min; Chowdhury, Aref; Weimann, Nils
    Optical and microstructural properties of N- and Ga-polarity GaN
    In: GaN and Related Alloys - 2003 / Boston, United States; 1 - 5 December 2003 2003, S. 625 - 630
  • Ng, Hock M.; Chowdhury, Aref; Parz, Wolfgang; Weimann, Nils
    Polarity-selective chemical etching of GaN : From nanotip pyramids to photonic crystals
    In: State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV: Proceedings of the Intenational Symposium / Orlando, United States; 12 - 17 October 2003 / Kopt, R.F.; Baca, A.G.; Pearton, S.J.; Ren, F. (Hrsg.) 2003, S. 3 - 11
  • Kopf, Rose F.; Sung, Wei Jer; Weimann, Nils; Chen, Young Kai; Houtsma, Vincent E.; Yang, Yang
    Towards planar processing for InP DHBTs
    In: Conference Proceedings - International Conference on Indium Phosphide and Related Materials 2003 / Santa Barbara, United States; 12 - 16 May 2003 2003, S. 57 - 60
  • Weimann, Nils; Manfra, Michael J.; Hsu, Julia W.P.; Pfeiffer, Loren N.; West, Kenneth W.; Lang, David V.; Molnar, Richard J.
    AlGaN/GaN HEMTs grown by MBE on semi-insulating HVPE GaN templates
    In: 60th Device Research Conference / DRC 2002; Santa Barbara, United States; 24 - 26 June 2002 2002, S. 33
  • Weimann, Nils; Manfra, Michael J.; Hsu, Julia W.P.; Baldwin, Kirk W.; Pfeiffer, Loren N.; West, Kenneth W.; Chu, Sung Nee George; Lang, David V.; Molnar, Richard J.
    AlGaN/GaN HEMTs grown by Molecular Beam Epitaxy on sapphire, SiC, and HYPE GaN templates
    In: Proceedings of IEEE Lester Eastman Conference on High Performance Devices 2002 / Newark, United States; 6 - 8 August 2002 2002, S. 126 - 133
  • Manfra, Michael J.; Weimann, Nils; Hsu, Julia W.P.; Pfeiffer, Loren N.; West, Kenneth W.; Molnar, Richard J.
    Comparison of high mobility AlGaN/GaN heterostructures grown by MBE on HVPE GaN templates and directly nucleated on sapphire
    In: 12th International Conference on Molecular Beam Epitaxy / MBE 2002; San Francisco, United States; 15 - 20 September 2002 2002, S. 231 - 232
  • Weimann, Nils; Eastman, L. F.; Obloh, H.; Kohler, K.
    GaN Static Induction Transistor Fabrication
    In: Proceedings of the 26th International Symposium on Compound Semiconductors / Compound Semiconductors 1999; 23-26th August 1999; Berlin, Germany / Ploog, K.; Trankle, G.; Weimann, G. (Hrsg.) 2000, S. 519 - 522
  • Weimann, Nils; Eastman, Lester F.
    Scattering of electrons at threading dislocations in GaN and consequences for current transport in vertical devices
    In: Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits / IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits; Ithaca, USA; 4 - 6 August 1997 1997, S. 219 - 226
  • Vorträge

  • Arzi, Khaled; Clochiatti, Simone; Suzuki, S.; Rennings, Andreas; Erni, Daniel; Weimann, Nils; Asada, M.; Prost, Werner;
    Triple-barrier resonant tunneling diode
    1st MARIE IRTG Spring School, International Research Training Group (IRTG), DFG CRC/TRR 196 MARIE, 28-29 March 2019, Dortmund, Germany,
    (2019)
  • Arzi, Khaled; Suzuki, S.; Rennings, Andreas; Erni, Daniel; Weimann, Nils; Asada, M.; Prost, Werner;
    On the sensitivity of triple-barrier resonant-tunneling (sub-) mm-wave detectors
    Progress in Electromagnetics Research Symposium, 2018, Toyama, Japan,
    Toyama (2018)
  • ; Arzi, K.; Suzuki, S.; Rennings, Andreas; Erni, Daniel; Weimann, Nils; Asada, M.; Prost, Werner
    Subharmonic signal generation and injection locking in resonant-tunneling-diode Terahertz oscillator
    79th Japan Society of Applied Physics (JSAP 2018) Autumn Meeting, Nagoya Congress Center, Nagoya, Japan Sept. 18-21, 2018,
    Nagoya (2018)
  • Weimann, Nils; Boppel, S.; Hossain, M.; Ostinelli, O.; Bolognesi, C.R.; Johansen, T.; Krozer, V.; Heinrich, W.;
    THZ Indium Phosphide Integrated Heterojunction Bipolar Transistor Technology for mm-Wave Beam Steering Appliccations
    The 8th ESA Workshop on Millimetre-Wave Technology and Applications; ESA-ESTEC; Noordwijk, the Netherlands; 10.12 - 12.12.2018,
    Noordwijk (2018)
  • Stoppel, D.; Hrobak, M.; Külberg, A.; Schönfeld, S.; Rentner, D.; Krüger, O.; Nosaeva, K.; Brahem, M.; Boppel, S.; Weimann, Nils;
    Through Silicon via (TSV) Process for Suppression of Substrate Modes in a Transferred‐Substrate InP DHBT MMIC Technology
    45th International Symposium on Compound Semiconductors, CSW 2018; Boston, USA; 29.05. - 01.06.2018,
    Boston (2018)
  • Monayakul, S; Wang, C; Krüger, Olaf; Weimann, Nils;
    Design, Fabrication, and Characterization of Miniaturized AuSn Flip-Chip Transitions up to 110 GHz
    37th Workshop on Compound Semiconductor Devices and Integrated Circuits; WOCSDICE 2013; Warnemünde, Germany , 26 - 29 May 2013,
    Warnemünde (2013)
  • Nosaeva, Ksenia; John, Wilfred; Weimann, Nils; Krüger, Olaf; Krämer, Tomas;
    Development of a Via Etch Process through Diamond and BCB for an Advanced Transferred-Substrate InP HBT Process
    37th Workshop on Compound Semiconductor Devices and Integrated Circuits; WOCSDICE 2013; Warnemünde, Germany , 26 - 29 May 2013,
    Warnemünde (2013)