Prof. Dr. M. Horn-von Hoegen
Curriculum Vitae
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Prof. Dr. Michael Horn-von Hoegen University of Duisburg-Essen Tel.: +49 203 379-1438/1439, Fax: +49 203 379-1555 |
Academic Education and Scientific Degree | |
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07/1997 | Appointment as Associate Professor at the University of Hannover |
07/1994 | Habilitation in Physics at the University of Hannover; Thesis: The influence of adsorbates on epitaxy |
12/1988 | Phd in Physics (Dr. rer. nat.); at the University of Hannover; Thesis: Growth and nucleation at molecular ray epitaxy of silicon on (111) surface, supervisor Prof. M. Henzler |
10/1979 – 09/1985 | Studies of Physics at the University of Hannover, Diploma; Thesis: SPA-LEED Study of epitaxy of silicon on silicon, supervisor Prof. M. Henzler |
Scientific Career | |
2010 | Research sabbatical at the Center for Functional Nanostructures of Brookhaven National Laboratory (USA) |
2004 & 2006 | Research sabbaticals at the University of Alberta, Edmonton (Canada) |
07/1999 | C4 Professor at the University of Duisburg |
12/1998 | Offer of professorship (C4) at Institute for Laser and Plasma Physics at the University of Essen (accepted 03/1999) |
08/1998 | Offer of professorship (C3) at Technical Physics of the Technical University of Braunschweig (rejected) |
WS 1993 | Substitution of professor position at the Unversity of Konstanz |
10/1990 – 06/1999 | Scientific Assistant at Institute of Solid State Physics at the University of Hannover |
06/1989 – 09/1990 | Postdoc Research Fellowship at IBM-Research Division, T.J. Watson Center, Yorktown Heights, New York, USA, Subject: Surfactant Modified Heteroepitaxy of Ge on Si in group of Dr. R.M. Tromp |
10/1985 – 05/1989 | Scientific Assistant at Institute of Solid State Physics at the University of Hannover |
Professional Activites | |
Since 2016 | Vice Dean, Faculty of Physics, UDE |
2010 – 2013 | Advisory Editor Euro Physics Letters |
2009 – 2014 | Vice Director, Center for Nanointegration Duisburg-Essen (CENIDE) |
2008 – 2018 | Board Member, Center for Nanointegration Duisburg-Essen (CENIDE) |
Since 2005 | DFG Liason Officer at the University of Duisburg-Essen |
2003 – 2009 | Member of the Editorial Advisory Board of Surface Science Co-Editor Euro Physics Letters |
2002 – 2013 | Director of Collaborative Research Centre SFB 616 Energy Dissipation at Surfaces of German Research Foundation (DFG) |
Awards | |
2004 & 2006 | iCORE Visiting-Professor-Grant-Award, University of Alberta, Canada |
1993 | Heinz-Maier-Leibnitz-Preis for Chemistry and Physics of Thin Films and Heterostructures |
1989/90 | IBM PostDoc Fellowship |
Fields of Interests | |
Techniques: High resolution low energy electron diffraction (SPA-LEED), time resolved electron diffraction (fs-RHEED), LEED-Microscopy (LEEM), time resolved photo electron microscopy (PEEM), scanning tunneling microscopy (STM), surface stress induced optical deflection (SSIOD) |
Selected Publications
Total number of refeered publications (according to Thomson Reuters Web of Science): 185,
number of citations: 5313, h-factor: 37, patents: 1
- T. Frigge, B. Hafke, T. Witte, B. Krenzer, C. Streubühr, A. Samad Syed, V. Mikšić Trontl, I. Avigo, P. Zhou, M. Ligges, D. von der Linde, U. Bovensiepen, M. Horn-von Hoegen, S. Wippermann, A. Lücke, S. Sanna, U. Gerstmann, W. G. Schmidt,
“Optically excited structural transition in atomic wires on surfaces at the quantum limit“,
Nature 544, 207 (2017)
- T. Frigge, B. Hafke, T. Witte, V. Tinnemann, and M. Horn-von Hoegen,
“Spot profile analysis and lifetime mapping in ultrafast electron diffraction: Lattice excitation of self-organized Ge nano structures on Si(001)”,
Struct. Dyn. 2, 035101 (2015)
- T. Frigge, B. Krenzer, and M. Horn-von Hoegen
“Nanoscale heat transport from Ge hut, dome and relaxed clusters on Si(001) measured by ultrafast electron diffraction”
Appl. Phys. Lett. 106, 053108 (2015)
- C. Streubühr, A. Kalus, P. Zhou, M. Ligges, A. Hanisch-Blicharski, M. Kammler, U. Bovensiepen, M. Horn-von Hoegen, and D. von der Linde
“Comparing ultrafast surface and bulk heating using time resolved electron diffraction”
Appl. Phys. Lett. 104, 161611 (2014)
- S. Wall, B. Krenzer, S. Wippermann, S. Sanna, F. Klasing, A. Hanisch-Blicharski, M. Kammler, Wolf Gero Schmidt, Michael Horn-von Hoegen
“An Atomistic Picture of Charge Density Wave Formation at Surfaces “
Phys. Rev. Lett. 109, 186101 (2012),
Phys. Rev. Lett. 111, 149602 (2013)
- G. Jnawali, C. Klein, Th. Wagner, H. Hattab, P. Zahl, C. Klein, D.P. Acharya, P. Sutter, A. Lorke, M. Horn-von Hoegen
“Manipulation of electronic transport in the Bi(111) surface state“
Phys. Rev. Lett. 108, 266804 (2012)
- H. Hattab, A.T. N'Diaye, D. Wall, C. Klein, G. Jnawali, J. Coraux, C. Busse, R. van Gastel, B. Poelsema, T. Michely, F.-J. Meyer zu Heringdorf, M. Horn-von Hoegen
“Interplay of wrinkles, strain, and lattice parameter in Graphene layers on Iridium”
Nanoletters 12, 678 (2012)
- H. Hattab, A.T. N'Diaye, D. Wall, G. Jnawali, J. Coraux, C. Busse, R. van Gastel, B. Poelsema, T. Michely, F.-J. Meyer zu Heringdorf, and M. Horn-von Hoegen
“Growth temperature dependent graphene alignment on Ir(111)”
Appl. Phys. Lett. 98, 141903 (2011)
- G. Sciaini, M. Harb, S. G. Kruglik, T. Payer, C. T. Hebeisen, F.-J. Meyer zu Heringdorf, M. Yamaguchi, M. Horn-von Hoegen, R. Ernstorfer, R.J.D. Miller
“Electronic acceleration of atomic motions and disordering in Bismuth”,
Nature 458, 56 (2009)
- M. Horn-von Hoegen
“Spot profile analysis low energy electron diffraction of semiconductor growth“
Zeitschrift für Kristallographie 214, 591 and 684 (1999).
Book chapters:
- M. Horn-von Hoegen, M. Henzler and G. Meyer, "Ag on Si surfaces: from insulator to metal" in Morphological Organization in Epitaxial Growth, Ed. Z. Zhang and M.G. Lagally, World Scientific, (1999).
- M. Horn-von Hoegen “Surfaces of Elemental Semiconductors“ in Surface and Interface Science, Vol.2 Properties of Elemental Surfaces, Ed. K. Wandelt, Wiley-VCH, Weinheim, pp 815-887 (2012)