Prof. Dr. M. Horn-von Hoegen

Curriculum Vitae

​ Hvh 164


Prof. Dr. Michael Horn-von Hoegen
Date of birth: September 23, 1959, married (3 children)
Full Professor (C4) for Experimental Physics

University of Duisburg-Essen
Lotharstraße 1-21, 47057 Duisburg

Tel.: +49 203 379-1438/1439, Fax: +49 203 379-1555


Academic Education and Scientific Degree
07/1997 Appointment as Associate Professor at the University of Hannover
07/1994 Habilitation in Physics at the University of Hannover; Thesis: The influence of adsorbates on epitaxy
12/1988 Phd in Physics (Dr. rer. nat.); at the University of Hannover; Thesis: Growth and nucleation at molecular ray epitaxy of silicon on (111) surface, supervisor Prof. M. Henzler
10/1979 – 09/1985 Studies of Physics at the University of Hannover, Diploma; Thesis: SPA-LEED Study of epitaxy of silicon on silicon, supervisor Prof. M. Henzler
Scientific Career
2010 Research sabbatical at the Center for Functional Nanostructures of Brookhaven National Laboratory (USA)
2004 & 2006 Research sabbaticals at the University of Alberta, Edmonton (Canada)
07/1999 C4 Professor at the University of Duisburg
12/1998 Offer of professorship (C4) at Institute for Laser and Plasma Physics at the University of Essen (accepted 03/1999)
08/1998 Offer of professorship (C3) at Technical Physics of the Technical University of Braunschweig (rejected)
WS 1993 Substitution of professor position at the Unversity of Konstanz
10/1990 – 06/1999 Scientific Assistant at Institute of Solid State Physics at the University of Hannover
06/1989 – 09/1990 Postdoc Research Fellowship at IBM-Research Division, T.J. Watson Center, Yorktown Heights, New York, USA, Subject: Surfactant Modified Heteroepitaxy of Ge on Si in group of Dr. R.M. Tromp
10/1985 – 05/1989 Scientific Assistant at Institute of Solid State Physics at the University of Hannover
Professional Activites
Since 2016 Vice Dean, Faculty of Physics, UDE
2010 – 2013 Advisory Editor Euro Physics Letters
2009 – 2014 Vice Director, Center for Nanointegration Duisburg-Essen (CENIDE)
2008 – 2018 Board Member, Center for Nanointegration Duisburg-Essen (CENIDE)
Since 2005 DFG Liason Officer at the University of Duisburg-Essen
2003 – 2009 Member of the Editorial Advisory Board of Surface Science
Co-Editor Euro Physics Letters
2002 – 2013 Director of Collaborative Research Centre SFB 616 Energy Dissipation at Surfaces of German Research Foundation (DFG)
2004 & 2006 iCORE Visiting-Professor-Grant-Award, University of Alberta, Canada
1993 Heinz-Maier-Leibnitz-Preis for Chemistry and Physics of Thin Films and Heterostructures
1989/90 IBM PostDoc Fellowship
Fields of Interests
  • Semiconductor- and metal-heteroepitaxy on Silicon, Surfactant modified epitaxy
  • Lattice accommodation, strain relaxation, and strain engineering in heteroepitaxial systems
  • Manipulation of vicinal surfaces by adsorbates
  • Self-organization of nanostructures on Silicon
  • Ultrafast time resolved electron diffraction at surfaces: heat transport on the nanoscale,
    driven phase transitions, electron phonon coupling
  • Ultrafast femto-second time resolved photo electron microscopy: electron dynamics,
    plasmonics in Ag nanostructures, organic semiconductor films
  • 2D-electron transport in surface states, manipulation of surface state

Techniques: High resolution low energy electron diffraction (SPA-LEED), time resolved electron diffraction (fs-RHEED), LEED-Microscopy (LEEM), time resolved photo electron microscopy (PEEM), scanning tunneling microscopy (STM), surface stress induced optical deflection (SSIOD)

Selected Publications

Total number of refeered publications (according to Thomson Reuters Web of Science): 185,
number of citations: 5313, h-factor: 37, patents: 1

  1. T. Frigge, B. Hafke, T. Witte, B. Krenzer, C. Streubühr, A. Samad Syed, V. Mikšić Trontl, I. Avigo, P. Zhou, M. Ligges, D. von der Linde, U. Bovensiepen, M. Horn-von Hoegen, S. Wippermann, A. Lücke, S. Sanna, U. Gerstmann, W. G. Schmidt,
    “Optically excited structural transition in atomic wires on surfaces at the quantum limit“,
    Nature 544, 207 (2017)
  2. T. Frigge, B. Hafke, T. Witte, V. Tinnemann, and M. Horn-von Hoegen,
    “Spot profile analysis and lifetime mapping in ultrafast electron diffraction: Lattice excitation of self-organized Ge nano structures on Si(001)”,
    Struct. Dyn. 2, 035101 (2015)
  3. T. Frigge, B. Krenzer, and M. Horn-von Hoegen
    “Nanoscale heat transport from Ge hut, dome and relaxed clusters on Si(001) measured by ultrafast electron diffraction”
    Appl. Phys. Lett. 106, 053108 (2015)
  4. C. Streubühr, A. Kalus, P. Zhou, M. Ligges, A. Hanisch-Blicharski, M. Kammler, U. Bovensiepen, M. Horn-von Hoegen, and D. von der Linde
    “Comparing ultrafast surface and bulk heating using time resolved electron diffraction”
    Appl. Phys. Lett. 104, 161611 (2014)
  5. S. Wall, B. Krenzer, S. Wippermann, S. Sanna, F. Klasing, A. Hanisch-Blicharski, M. Kammler, Wolf Gero Schmidt, Michael Horn-von Hoegen
    “An Atomistic Picture of Charge Density Wave Formation at Surfaces “
    Phys. Rev. Lett. 109, 186101 (2012),
    Phys. Rev. Lett. 111, 149602 (2013)
  6. G. Jnawali, C. Klein, Th. Wagner, H. Hattab, P. Zahl, C. Klein, D.P. Acharya, P. Sutter, A. Lorke, M. Horn-von Hoegen
    “Manipulation of electronic transport in the Bi(111) surface state“
    Phys. Rev. Lett. 108, 266804 (2012)
  7. H. Hattab, A.T. N'Diaye, D. Wall, C. Klein, G. Jnawali, J. Coraux, C. Busse, R. van Gastel, B. Poelsema, T. Michely, F.-J. Meyer zu Heringdorf, M. Horn-von Hoegen
    “Interplay of wrinkles, strain, and lattice parameter in Graphene layers on Iridium”
    Nanoletters 12, 678 (2012)
  8. H. Hattab, A.T. N'Diaye, D. Wall, G. Jnawali, J. Coraux, C. Busse, R. van Gastel, B. Poelsema, T. Michely, F.-J. Meyer zu Heringdorf, and M. Horn-von Hoegen
    “Growth temperature dependent graphene alignment on Ir(111)”
    Appl. Phys. Lett. 98, 141903 (2011)
  9. G. Sciaini, M. Harb, S. G. Kruglik, T. Payer, C. T. Hebeisen, F.-J. Meyer zu Heringdorf, M. Yamaguchi, M. Horn-von Hoegen, R. Ernstorfer, R.J.D. Miller
    “Electronic acceleration of atomic motions and disordering in Bismuth”,
    Nature 458, 56 (2009)
  10. M. Horn-von Hoegen
    “Spot profile analysis low energy electron diffraction of semiconductor growth“
    Zeitschrift für Kristallographie 214, 591 and 684 (1999).

Book chapters:

  1. M. Horn-von Hoegen, M. Henzler and G. Meyer, "Ag on Si surfaces: from insulator to metal" in Morphological Organization in Epitaxial Growth, Ed. Z. Zhang and M.G. Lagally, World Scientific, (1999).
  2. M. Horn-von Hoegen “Surfaces of Elemental Semiconductors“ in Surface and Interface Science, Vol.2 Properties of Elemental Surfaces, Ed. K. Wandelt, Wiley-VCH, Weinheim, pp 815-887 (2012)