Prof. Dr. M. Horn-von Hoegen

Curriculum Vitae

bild Horn-von Hoegen

Experimentalphysik
Universität Duisburg-Essen
Lotharstraße 1-21
47057 Duisburg

Tel.: 0203 379-1438/1439
Fax: 0203 379-1555

horn-von-hoegen[at]uni-due.de

 
Position: Professor (C4)
Status: verheiratet, 3 Kinder
 
Akademische Ausbildung mit Abschluss
10/1979 - 09/1985 Physikstudium an der Universität Hannover, Diplom; Thema: SPA-LEED Untersuchungen der Epitaxie von Silizium auf Silizium, Betreuer: Prof. M. Henzler
 
Wissenschaftliche Abschlüsse
07/1997 Ernennung zum apl Professor an der Universität Hannover
07/1994 Habilitation im Fach Physik; Universität Hannover; Thema: Der Einfluss von Adsorbaten auf die Epitaxie, Mentor: Prof. M. Henzle
12/1988 Promotion in Physik (Dr. rer. nat.); Universität Hannover;
Thema: Wachstum und Keimbildung bei der Molekularstrahlepitaxie von Silizium auf der (111)-Fläche; Betreuer: Prof. M. Henzler
 
Beruflicher Werdegang ab Studienabschluss
07/1999 Amtsantritt an der Universität Duisburg
12/1998 Ruf auf eine C4 Professur am Institut für Laser- und Plasmaphysik der Universität Essen – Rufannahme 03/1999
08/1998 Ruf auf eine C3 Professur an die Technische Physik der TU Braunschweig, abgelehnt
10/1990 - 06/1999 Assistent/Oberassistent am Lehrstuhl für „Festkörperphysik“ an der Universität Hannover (Prof. M. Henzler)
06/1989 - 09/1990 Postdoc-Forschungsstipendium bei der IBM-Research Division, T.J. Watson Center, Yorktown Heights, New York, USA: "MEIS-Untersuchungen der Ge/Si-Heteroepitaxie mit Surfactants" (R.M. Tromp)
10/1985 - 05/1989 Wissenschaftlicher Mitarbeiter am Lehrstuhl für „Festkörperphysik“ an der Universität Hannover (Prof. M. Henzler)
 
Sonstiges
Herausgeberschaften: Advisory board Europhysics Letters
Mitgliedschaften: Deutsche Physikalische Gesellschaft (DPG),
Deutscher Hochschulverband,
Materials Research Society (MRS)
Funktionen: Sprecher des SFB 616 „Energiedissipation an Oberflächen“,
stellvertretender Sprecher CeNIDE,
Vertrauensdozent der DFG an der Universität Duisburg-Essen
Auszeichnungen Heinz-Maier-Leibnitz-Preis für Chemie und Physik dünner Schichten und Schicht-systeme (1993)
iCORE Visiting-Professor-Grant-Award, University of Alberta, Canada (2004 & 2006)
 
Forschungsgebiete
  • Halbleiter- und Metall-Heteroepitaxie auf Silizium
  • Surfactant modifizierte Epitaxie von Ge auf Si
  • Gitterfehlanpassung und Verspannungsrelaxation in heteroepitaktischen Systemen
  • Manipulation von vizinalen Oberflächen durch Adsorbate
  • Selbstorganisation von Nanostrukturen auf Si-Oberflächen
  • Ultraschnelle zeitaufgelöste Elektronenbeugung an Oberflächen:
  • nanoskaliger Wärmetransport, getriebene Phasenübergänge, Elektron-Phonon-Kopplung
  • 2D-Elektronentransport in Oberflächenzuständen, Manipulation von Oberflächenzuständen

Publikationen

4629 Citations; h-factor = 34 (according to web of science)
6549 Citations; h-factor = 39 (according to google scholar)

 

ResearchGate


    2017


  1. Short-range surface plasmonics: Localized electron emission dynamics from a 60-nm spot on an atomically flat single-crystalline gold surface,
    B. Frank, P. Kahl, D. Podbiel, G. Spektor, M. Orenstein, L. Fu, T. Weiss, M. Horn-von Hoegen, T.J. Davis, F.-J. Meyer zu Heringdorf and H. Giessen,
    Science Advances 3 (7) (2017)
    DOI

  2. Nanoscale interfacial heat transport of ultrathin epitaxial hetero films: Few monolayer Pb(111) on Si(111),
    T. Witte, T. Frigge, B. Hafke, B. Krenzer, and M. Horn-von Hoegen,
    Applied Physics Letters 110 (2017) p. 243103
    DOI

  3. Microanalysis of single-layer hexagonal boron nitride islands on Ir(111),
    M. Petrović, U. Hagemann, M. Horn-von Hoegen and F.-J. Meyer zu Heringdorf,
    Applied Surface Science 420 (2017) pp. 504-510
    DOI

  4. Optically excited structural transition in atomic wires on surfaces at the quantum limit,
    T. Frigge, B. Hafke, T. Witte, B. Krenzer, C. Streubühr, A. Samad Syed, V. Mikšić Trontl, I. Avigo, P. Zhou, M. Ligges, D. von der Linde, U. Bovensiepen, M. Horn-von Hoegen, S. Wippermann, A. Lücke, S. Sanna, U. Gerstmann and W. G. Schmidt,
    Nature 544 (2017) pp. 207-211
    DOI

  5. Direct Observation of Surface Plasmon Polariton Propagation and Interference by Time-Resolved Imaging in Normal-Incidence Two Photon Photoemission Microscopy,
    Ph. Kahl, D. Podbiel, Chr. Schneider, A. Makris, S. Sindermann, Chr. Witt, D. Kilbane, M. Horn-von Hoegen, M Aeschlimann and F. Meyer zu Heringdorf,
    Plasmonics 0 (2017) pp. 1-8
    DOI


  6. 2016


  7. Decay of isolated hills and saddles on Si(001),
    P. Kirschbaum, L. Brendel, K. Roos, M. Horn-von Hoegen and F.-J. Meyer zu Heringdorf,
    Materials Research Express 3 (8) (2016)
    DOI

  8. Dy uniform film morphologies on graphene studied with SPA-LEED and STM,
    D. McDougall, H. Hattaba, M.T. Hershberger, M. Hupalo, M. Horn von Hoegen, P.A. Thiel and M.C. Tringides,
    Carbon 108 (2016) pp. 283-293
    DOI

  9. Two-dimensional interaction of spin chains in the Si(553)-Au nanowire system,
    B. Hafke, T. Frigge, T. Witte, B. Krenzer, J. Aulbach, J. Schäfer, R. Claessen, S. C. Erwin, and M. Horn-von Hoegen,
    Physical Review B 94 (2016) p. 161403
    DOI

  10. A combined STM and SPA-LEED study of the "explosive" nucleation and collective diffusion in Pb/Si(111),
    H. Hattab, M. Hupalo, M. Hershberger, M. Horn von Hoegen and M.C. Tringides,
    Surf. Sci. 646 (2016) pp. 50-55
    DOI


  11. 2015


  12. Thickness-dependent electron-lattice equilibration in laser-excited thin Bismuth films,
    K. Sokolowski-Tinten, R. Li, A. H. Reid, S. P. Weathersby, F. Quirin, T. Chase, R. Coffee, J. Corbett, A. Fry, N. Hartmann, C. Hast, R. Hettel, M. Horn von Hoegen, D. Janoschka, J. R. Lewandowski, M. Ligges, F. Meyer zu Heringdorf, X. Shen, T. Vecchione, C. Witt, J. Wu,,
    New J. Phys. 17 (2015) p. 113047
    DOI

  13. Nanoscale thermal transport in selforganized epitaxial Ge nanostructures on Si(001),
    T. Frigge, B. Hafke, V. Tinnemann, T. Witte, B. Krenzer and M. Horn-von Hoegen,
    Semiconductor Science and Technology 30 (2015) p. 105027
    DOI

  14. Spot profile analysis and lifetime mapping in ultrafast electron diffraction: Lattice excitation of self-organized Ge nanostructures on Si(001),
    T. Frigge, B. Hafke, V. Tinnemann, T. Witte and M. Horn-von Hoegen,
    Structural Dynamics 2 (2015) p. 035101
    DOI

  15. Barrier-free subsurface incorporation of 3d metal atoms into Bi(111) films,
    C. Klein, N. J. Vollmers, U. Gerstmann, P. Zahl, D. Lükermann, G. Jnawali, H. Pfnür, C. Tegenkamp, P. Sutter, W. G. Schmidt, and M. Horn-von Hoegen,
    Physical Review B 91 (2015) p. 195441
    DOI

  16. Signatures of plasmoemission in two photon photoemission electron microscopy,
    F.-J. Meyer zu Heringdorf ; P. Kahl ; A. Makris ; S. Sindermann ; D. Podbiel ; M. Horn-von Hoegen,
    SPIE Proceedings 9361 (2015)
    DOI

  17. Nanoscale heat transport from Ge hut, dome and relaxed clusters on Si(001) measured by ultrafast electron diffraction,
    T. Frigge, B. Hafke, V. Tinnemann, B. Krenzer, and M. Horn-von Hoegen ,
    Applied Physics Letters 106 (2015) pp. 053108-1-053108-4
    DOI


  18. 2014


  19. In-situ high-resolution low energy electron diffraction study of strain relaxation in heteroepitaxy of Bi(111) on Si(001): Interplay of strain state, misfit dislocation array and lattice parameter,
    H. Hattab, G. Jnawali, M. Horn von Hoegen,
    Thin Solid Films 570 (2014) pp. 159-163
    DOI

  20. Comparing ultrafast surface and bulk heating using time-resolved electron diffraction,
    C. Streubühr, A. Kalus, P. Zhou, M. Ligges, A. Hanisch-Blicharski, M. Kammler, U. Bovensiepen, M. Horn-von Hoegen and D. von der Linde,
    Applied Physics Letters 104 (2014) p. 161611
    DOI

  21. Normal-Incidence Photoemission Electron Microscopy (NI-PEEM) for Imaging Surface Plasmon Polaritons,
    P. Kahl, S. Wall, C. Witt, C. Schneider, D. Bayer, A. Fischer, P. Melchior, M. Horn-von Hoegen, M. Aeschlimann, F.-J. Meyer zu Heringdorf,
    Plasmonics 9 (2014) pp. 1401-1407
    DOI

  22. Strain state, film and surface morphology of epitaxial topological insulator Bi2Se3 films on Si(111),
    C. Klein, M. Vyshnepolsky, A. Kompch, F. Klasing, A. Hanisch-Blicharski, M. Winterer, M. Horn-von Hoegen,
    Thin Solid Films 564 (2014) pp. 241-245
    DOI

  23. Hysteresis proves that the In/Si(111) (8x2) to (4x1) phase transition is first-order,
    F. Klasing, T. Frigge, B. Hafke, S. Wall, B. Krenzer, A. Hanisch-Blicharski, and M. Horn-von Hoegen,
    Physical Review B 89 (2014) p. 121107
    DOI


  24. 2013


  25. Frigge et al. Reply on "An Atomistic picture of charge density wave formation at surfaces",
    T. Frigge, S. Wall, B. Krenzer, St. Wippermann, S. Sanna, F. Klasing, A. Hanisch-Blicharski, M. Kammler, W. G. Schmidt, and M. Horn-von Hoegen,
    Physical Review Letters 111 (2013) p. 149602
    DOI

  26. Al-induced faceting of Si(113),
    C. Klein, I. Heidmann, T. Nabbefeld, M. Speckmann, T. Schmidt, F.-J. Meyer zu Heringdorf, J. Falta, M. Horn-von Hoegen,
    Surface Science 618 (2013) pp. 109-114
    DOI

  27. Epitaxial growth of the topological insulator Bi2Se3 on Si(111): Growth mode, lattice parameter and strain s,
    M. Vyshnepolsky, C. Klein, F. Klasing, A. Hanisch-Blicharski and M. Horn-von Hoegen,
    Applied Physics Letters 103/11 (2013) p. 111909
    DOI

  28. Mode conversion and long-lived vibrational modes in lead monolayers on silicon (111) after femtosecond laser excitation: A molecular dynamics simulation,
    S. Sakong, P. Kratzer, S. Wall, A. Kalus and M. Horn-von Hoegen,
    Physical Review B 88 (2013) p. 115419
    DOI

  29. Ultrafast laser-induced melting and ablation studied by time-resolved diffuse X-ray scattering,
    M. Nicoul, F. Quirin, A.M. Lindenberg, A. Barty, D.M. Fritz, D. Zhu, H. Lemke, M. Chollet, D.A. Reis, J. Chen, S. Ghimire, M. Trigo, M. Fuchs, K.J. Gaffney, J. Larsson, T. Becker, S. Meyer, T. Payer, F. Meyer zu Heringdorf, M. Horn-von Hoegen, M. Jerman a,
    EPJ Web of Conferences 41 (2013) pp. 04013-1-04013-3
    DOI

  30. Effect of adsorbed magnetic and non-magnetic atoms on electronic transport through surfaces with strong spin-orbit coupling,
    D. Lükermann, S. Sologub, H. Pfnür, C. Klein, M. Horn-von Hoegen, and C. Tegenkamp,
    Materialwissenschaft und Werkstofftechnik 44 (2013) pp. 210-217
    DOI

  31. Ultrafast time resolved reflection high energy electron diffraction with tilted pump pulse fronts,
    P. Zhou, C. Streubühr, A. Kalus, T. Frigge, S. Wall, A. Hanisch-Blicharski, M. Kammler, M. Ligges, U. Bovensiepen, D. von der Linde and M. Horn-von Hoegen,
    EPJ Web of Conferences 41 (2013) pp. 10016-1-10016-3
    DOI

  32. Nanoscale heat transport in self-organized Ge clusters on Si(001),
    T. Frigge, A. Kalus, F. Klasing, M. Kammler, A. Hanisch-Blicharski and M. Horn-von Hoegen,
    MRS Proceedings 1456 (2013)
    DOI

  33. Ultra-fast electron diffraction at surfaces: From nanoscale heat transport to driven phase transitions,
    A. Hanisch-Blicharski, A. Janzen, B. Krenzer, S. Wall, F. Klasing, A. Kalus, T. Frigge, M. Kammler and M. Horn-von Hoegen,
    Ultramicroscopy 127 (2013) pp. 2-8
    DOI


  34. 2012


  35. Scattering at magnetic and nonmagnetic impurities on surfaces with strong spin-orbit coupling,
    D. Lükermann, S. Sologub, H. Pfnür, C. Klein, M. Horn-von Hoegen, and C. Tegenkamp,
    Physical Review B 86 (2012) p. 195432
    DOI

  36. Transient anisotropy in the electron diffraction of femtosecond laser-excited bismuth,
    P. Zhou, C. Streubühr, M. Ligges, T. Brazda, T. Payer, F. Meyer zu Heringdorf, M. Horn-von Hoegen and D. von der Linde,
    New Journal of Physics 14 (2012) p. 103031
    DOI

  37. An Atomistic picture of charge density wave formation at surfaces,
    S. Wall, B. Krenzer, F. Klasing, A. Hanisch-Blicharski, M. Kammler, M. Horn-von Hoegen, S. Wippermann, S. Sanna, W.G. Schmidt,
    Physical Review Letters 109 (2012) p. 186101
    DOI

  38. Heat Transport through Interfaces with and without Misfit Dislocation Arrays,
    A. Hanisch-Blicharski; B. Krenzer; S. Wall; A. Kalus; T. Frigge; M. Horn-von Hoegen,
    Journal of Materials Research 27 (2012) pp. 2718-2723
    DOI

  39. Manipulation of Electronic Transport in the Bi(111) Surface State,
    G. Jnawali, C. Klein, Th. Wagner, H. Hattab, P. Zahl, D. P. Acharya, P. Sutter, A. Lorke and M. Horn-von Hoegen ,
    Physical Review Letters 108 (2012) p. 266804
    DOI

  40. High-quality epitaxial Bi(111) films on Si(111) by isochronal annealing,
    T. Payer, C. Klein, M. Acet, V. Ney, M. Kammler, F.-J. Meyer zu Heringdorf and M. Horn-von Hoegen,
    Thin Solid Films 520 (2012) pp. 6905-6908
    DOI

  41. Nanoscale Heat Transport through Epitaxial Ultrathin Hetero Films: Bi(111)/Si(001) and Bi(111)/Si(111) ,
    A. Hanisch-Blicharski, S. Wall, A. Kalus, T. Frigge and M. Horn-von Hoegen,
    MRS Proceedings MRSF11-1404-W02-08 (2012)
    DOI

  42. Interplay of wrinkles, strain, and lattice parameter in Graphene layers on Iridium,
    H. Hattab, A.T. N'Diaye, D. Wall, C. Klein, G. Jnawali, J. Coraux, C. Busse, R. van Gastel, B. Poelsema, T. Michely, F.-J. Meyer zu Heringdorf, M. Horn-von Hoegen ,
    Nanoletters 12 (2012) pp. 678-682
    DOI


  43. 2011


  44. Epitaxial Ag Nanowires with a Single Grain Boundary for Electromigration,
    S. Sindermann, C. Witt, D. Spoddig, M. Horn-von Hoegen, G. Dumpich, and F.-J. Meyer zu Heringdorf,
    Rev. Sci. Instrum. 82 (2011) p. 123907
    DOI

  45. Dynamics of Reconstructed Zones Formed Around Islands on Si During Desorption: Diffusion Made Visible,
    F. Meyer zu Heringdorf, D. Wall, K.R. Roos, I. Lohmar, J. Krug and M. Horn-von Hoegen,
    Proceedings of the ALC 11 Conference 0 (2011) p. 372

  46. Shape, orientation, and crystalline composition of silver islands on Si(111),
    D. Wall, S. Tikhonov, S. Sindermann, D. Spoddig, C. Hassel, M. Horn-von Hoegen, and F. Meyer zu Heringdorf,
    IBM Journal of Research and Development 55(4) (2011) pp. 9:1-9:6
    DOI

  47. Transient reversal of a Peierls-transition: Extreme phonon softening in laser-excited Bismuth,
    Wei L., M. Nicoul, U. Shymanovich, A. Tarasevitch, M. Kammler, M. Horn-von Hoegen, D. von der Linde and K. Sokolowski-Tinten,
    Ultrafast Phenomena XVII (2011) p. 314

  48. Growth temperature dependent graphene alignment on Ir(111),
    H. Hattab, A.T. N'Diaye, D. Wall, G. Jnawali, J. Coraux, C. Busse, R. van Gastel, B. Poelsema, T. Michely, F.-J. Meyer zu Heringdorf, and M. Horn-von Hoegen ,
    Applied Physics Letters 98 (2011) p. 141903
    DOI

  49. Atomically smooth epitaxial p-doped silicon nanowires catalyzed by aluminum at low-temperature,
    O. Moutanabbir, S. Senz, R. Scholz, M. Alexe, Y. Kim, Yuwe Wang, C. Wiethoff, T. Nabbefeld, F. Meyer zu Heringdorf, M. Horn-von Hoegen ,
    ACS Nano 5 (2) (2011) pp. 1313-1320
    DOI

  50. Lost in reciprocal space? Determination of scattering condition in spot profile analysis low energy electron diffraction,
    C. Klein, T. Nabbefeld, H. Hattab, D. Meyer, G. Jnawali, M. Kammler, F. Meyer zu Heringdorf, A. Golla-Franz, B.H Müller, Th. Schmidt, M. Henzler, and M. Horn-von Hoegen ,
    Rev. Sci. Instrum. 82 (2011) p. 35111
    DOI


  51. 2010


  52. Anisotropy of Ag Diffusion on Vicinal Si Surfaces,
    S. Sindermann, D. Wall, K.R. Roos, M. Horn-von Hoegen, F.-J. Meyer zu Heringdorf,
    e-Journal of Surface Science and Nanotechnology 8 (2010) pp. 372-376
    DOI

  53. Two-dimensional electron transport and scattering in Bi(111) surface states,
    G. Jnawali, Th. Wagner, H. Hattab, R. Möller, A. Lorke, M. Horn-von Hoegen,
    e-Journal of Surface Science and Nanotechnology 8 (2010) p. 27
    DOI

  54. Extreme phonon softening in laser-excited Bismuth - towards an inverse Peierls-transition,
    Wei L., M. Nicoul, U. Shymanovich, A. Tarasevitch, M. Kammler, M. Horn-von Hoegen, D. von der Linde, K. Sokolowski-Tinten,
    MRS Proceedings 1230E (2010) p. 3
    DOI

  55. The role of thermal and electronic pressure in the picosecond acoustic response of femtosecond laser-excited solids,
    U. Shymanovich, M. Nicoul, S. Kähle, Wei Lu, A. Tarasevitch, Ping Zhou, T. Wietler, M. Horn-von Hoegen, D. von der Linde, K. Sokolowski-Tinten,
    MRS Proceedings 1230E (2010) p. 6
    DOI

  56. Silver Induced Faceting of Si(112),
    T. Nabbefeld, C. Wiethoff, F.-J. Meyer zu Heringdorf, M. Horn-von Hoegen,
    Applied Physics Letters 97 (2010) p. 41905
    DOI

  57. Coherent acoustic and optical phonons in laser-excited solids studied by ultrafast time-resolved X-ray diffraction,
    U. Shymanovich, M. Nicoul, W. Lu, A. Tarasevitch, M. Kammler, M. Horn-von Hoegen, D. von der Linde, K. Sokolowski-Tinten,
    High-Power Laser Ablation 2010, AIP Conf. Proc. 1278 (2010) p. 558
    DOI

  58. Imaging diffusion fields on a surface with multiple reconstructions: Ag/Si(111) ,
    D. Wall, I. Lohmar, K.R. Roos, J. Krug, M. Horn-von Hoegen, F.-J. Meyer zu Heringdorf,
    New Journal of Physics 12 (2010) p. 103019
    DOI

  59. Steering the growth and watching the strain of epitaxial graphene on Iridium(111),
    A.T. N'Diaye, R. van Gastel, A.J. Martinez-Galera, J. Coraux, H. Hattab, D. Wall, F.-J. Meyer zu Heringdorf, M. Horn-von Hoegen, J.M. Gomez-Rodriguez, B. Poelsema, C. Busse, Th. Michely,
    IMC17 Conference Proceedings (2010) p. 11.4

  60. High temperature surface diffusion involving multiple reconstructions: Ag/Si(111),
    D. Wall, I. Lohmar, K.R. Roos, J. Krug, F.-J. Meyer zu Heringdorf, M. Horn-von Hoegen,
    IMC17 Conference Proceedings (2010) p. 11511


  61. 2009


  62. Ultra-fast time-resolved electron diffraction of strongly driven phase transitions on silicon surfaces,
    S. Möllenbeck, A. Hanisch-Blicharski, P. Schneider, M. Ligges, P. Zhou, M. Kammler, B. Krenzer and M. Horn-von Hoegen,
    MRS Proceedings 1230-MM03-09 (2009) pp. 3-9
    DOI

  63. Epitaxial growth of Bi(111) on Si(001),
    G. Jnawali, H. Hattab, C. A. Bobisch, E. Zubkov, C. Deiter, T. Weisemoeller, F. Bertram, J. Wollschläger, R. Möller, M. Horn-von Hoegen,
    e-Journal of Surface Science and Nanotechnology 7 (2009) pp. 441-447
    DOI

  64. Stable tungsten silicide contacts for surface sensitive conductivity measurements,
    G. Jnawali, F.-J. Meyer zu Heringdorf, D. Wall, S. Sindermann, M. Horn-von Hoegen,
    J. Vac. Sci. Technol. B B27 (2009) p. 180
    DOI

  65. Nucleation and initial growth in the semimetallic homoepitaxial system of Bi on Bi(111),
    G. Jnawali, Th. Wagner, H. Hattab, R. Möller, M. Horn-von Hoegen,
    Physical Review B B79 (2009) p. 193306
    DOI

  66. Nanoscale dislocation patterning in Bi(111)/Si(001) heteroepitaxy,
    G. Jnawali, H. Hattab, C.A. Bobisch, A. Bernhart, E. Zubkov, R. Möller, M. Horn-von Hoegen,
    Surface Science 603 (2009) p. 2057
    DOI

  67. Space charge effects in photoemission electron microscopy using amplifed femtosecond laser pulses,
    N. M. Buckanie, J. Göhre, P. Zhou, D. von der Linde, M. Horn-von Hoegen, F.-J. Meyer zu Heringdorf,
    J. Phys.: Condens. Matter 21 (2009) p. 314003
    Link

  68. The influence of anisotropic diffusion on Ag nanowire formation,
    D. Wall, S. Sindermann, M. Horn-von Hoegen, F.-J. Meyer zu Heringdorf,
    J. Phys.: Condens. Matter 21 (2009) p. 314023
    Link

  69. Electronic acceleration of atomic motions and disordering in bismuth,
    G. Sciaini, M. Harb, S. G. Kruglik, T. Payer, C. T. Hebeisen, F.-J. Meyer zu Heringdorf, M. Yamaguchi, M. Horn-von Hoegen, R. Ernstorfer, R. J. Dwayne Miller,
    Nature 458 (2009) p. 56
    DOI

  70. Phonon confinement effects in ultra-thin, epitaxial Bismuth-films on Silicon studied by time-resolved electron diffraction,
    B. Krenzer, A. Hanisch-Blicharski, P. Schneider, Th. Payer, S. Möllenbeck, O. Osmani, M. Kammler, R. Meyer, M. Horn-von Hoegen,
    Physical Review B B80 (2009) p. 24307
    DOI

  71. Atomic View of the Photoinduced Collapse of Gold and Bismuth,
    R. Ernstorfer, M. Harb, C.T. Hebeisen, G. Sciaini, T. Dartigalongue, I. Rajkovic,M. Ligges, D. von der Linde, Th. Payer, M. Horn-von-Hoegen, F.-J. Meyer zu Heringdorf, S. Kruglik, R.J.D. Miller,
    Ultrafast Phenomena XVI 92 (2009) pp. 113-115
    DOI

  72. Electron-phonon energy transfer in Bi observed by time resolved electron diffraction,
    I. Rajkovic,M. Ligges, P. Zhou, Th. Payer, F.-J. Meyer zu Heringdorf, M. Horn-von-Hoegen, D. von der Linde,
    Ultrafast Phenomena XVI 92 (2009) pp. 110-112
    DOI

  73. Selecting a single orientation for millimeter sized graphene sheets,
    R. van Gastel, A.T. N'Diaye, D. Wall, J. Coraux, C. Busse, N.M. Buckanie, F.-J. Meyer zu Heringdorf, M. Horn-von Hoegen, T. Michely, B. Poelsema,
    Applied Physics Letters 95 (2009) p. 121901
    DOI

  74. In situ observation of stress relaxation in epitaxial graphene,
    A.T. N'Diaye, R. van Gastel, G. Martinez, J. Coraux, H. Hattab, F.-J. Meyer zu Heringdorf, D. Wall, M. Horn-von Hoegen, J.-M. Gomez-Rodriguez, B. Poelsema, C. Busse, T. Michely,
    New Journal of Physics 11 (2009) p. 113056
    DOI

  75. Transient Cooling of Ultrathin Epitaxial Bi(111)-Films on Si(111) upon Femtosecond Laser Excitation Studied by Ultrafast Reflection High Energy Electron Diffraction",
    A. Hanisch-Blicharski, B. Krenzer, S. Möllenbeck, M. Ligges, P. Zhou, M. Kammler, M. Horn-von Hoegen,
    MRS Proceedings 1172 (2009) pp. 4-8
    Link


  76. 2008


  77. Nanopattern Formation by Periodic Array of Interfacial Misfit Dislocations in Bi(111)/Si(001) Heteroepitaxy,
    G. Jnawali, H. Hattab, C. Bobisch, A. Bernhart, E. Zubkov, F.-J. Meyer zu Heringdorf, R.Möller, B. Krenzer, M. Horn-von Hoegen,
    MRS Proceedings (2008)
    Link

  78. Absence of surface stress change during pentacene thin film growth on the Si(111)-(7x7) surface: a buried reconstruction interface,
    P. Kury, K.R. Roos, M. Horn- von Hoegen, F.-J. Meyer zu Heringdorf,
    New Journal of Physics 10 (2008) p. 23037
    DOI

  79. Disorder-mediated ordering by self-interfactant effect in organic thin film growth of pentacene on silicon,
    P. Kury, K.R. Roos, D. Thien, S. Möllenbeck, D. Wall, M. Horn- von Hoegen, F.-J. Meyer zu Heringdorf,
    Organic Electronics 9 (2008) p. 461
    DOI

  80. Growth of Ag nanowires on Au-pre-facetted 4? vicinal Si(0 0 1),
    F.-J. Meyer zu Heringdorf, K.L. Roos, Chr. Wiethoff, M. Horn- von Hoegen, K.R. Roos,
    Surface Science 602 (2008) pp. 1852-1857
    DOI

  81. Real-Time View of Mesoscopic Surface Diffusion,
    K.R. Roos, K.L. Roos, I. Lohmar, D. Wall, J. Krug, M. Horn- von Hoegen, F.-J. Meyer zu Heringdorf,
    Physical Review Letters 100 (2008) p. 16103
    DOI

  82. Epitaxial Bi(111) films on Si(001): Strain state, surface morphology, and defect structure,
    H. Hattab, E. Zubkov, A. Bernhart, G. Jnawali, C.Bobisch, B. Krenzer, M. Acet, R. Möller, M. Horn-von Hoegen,
    Thin Solid Films 516 (2008) p. 8227
    DOI

  83. Thermal response of epitaxial thin Bi films on Si(001) upon femtosecond laser excitation studied by ultrafast electron diffraction,
    A. Hanisch, B. Krenzer, T. Pelka, S. Möllenbeck, M. Horn-von Hoegen,
    Physical Review B 77 (2008) p. 125410
    DOI

  84. Heat transport in nanoscale heterosystems: a numerical simulation and analytical solution,
    B. Krenzer, A. Hanisch, A. Janzen, A. Duvenbeck, B. Rethfeld, M. Horn-von Hoegen,
    Journal of Nanomaterials 2008 (2008) p. 590609
    DOI

  85. Homoepitaxial growth of Bi(111),
    G. Jnawali, H. Hattab, C. Bobisch, A. Bernhart, E. Zubkov, R. Möller, M. Horn-von Hoegen,
    Physical Review B 78 (2008) p. 35321
    DOI

  86. Au stabilization and coverage of sawtooth facets on Si nanowires grown by vapor-liquid-solid epitaxy,
    C. Wiethoff, F.M. Ross, M. Copel, M. Horn-von Hoegen, F.-J. Meyer zu Heringdorf,
    Nanoletters 8 (2008) p. 3065
    DOI

  87. Ultrathin Epitaxially Grown Bismuth (111) Membranes,
    T. Payer, I. Rajkovic, M. Ligges, D. von der Linde, M. Horn-von Hoegen, F.-J. Meyer zu Heringdorf,
    Applied Physics Letters 93 (2008) p. 93102
    DOI

  88. LEEM/PEEM Study of Anisotropic Diffusion Fields in the Ag/Si(001) System,
    D. Wall, K. R. Roos, M. Horn-von Hoegen, F.-J. Meyer zu Heringdorf,
    MRS Proceedings 1088E (2008)
    Link


  89. 2007


  90. A pulsed electron gun for ultrafast electron diffraction at surfaces,
    A. Janzen, B. Krenzer, O. Heinz, P. Zhou, D. Thien, A. Hanisch, F.-J., Meyer zu Heringdorf, D. von der Linde, M. Horn-von Hoegen,
    Rev. Sci. Instrum. 78 (2007) p. 13906
    DOI

  91. Diffraction of strongly convergent X-rays from picosecondacoustic transients,
    U. Shymanovich, M. Nicoul, J. Blums, K. Sokolowski-Tinten, A.Tarasevitch, T. Wietler, M. Horn-von Hoegen, D. von der Linde,
    Applied Physics A 87 (2007) p. 7
    DOI

  92. Lattice-matching periodic array of misfit dislocations: Heteroepitaxy of Bi(111) on Si(001),
    G. Jnawali, H. Hattab, F.-J. Meyer zu Heringdorf, B. Krenzer, M. Horn- von Hoegen,
    Physical Review B 76 (2007) p. 35337
    DOI

  93. Femtosecond photoemission microscopy,
    F.-J. Meyer zu Heringdorf, L.I. Chelaru, S. Möllenbeck, D. Thien, M. Horn-von Hoegen,
    Surface Science 601 (2007) p. 4700
    DOI

  94. Ultrafast bond softening in Bismuth: Mapping a solid`s interatomic potential with X-rays,
    D. M. Fritz, D. A. Reis, B. Adams, R. A. Akre, J. Arthur, C. Blome, P. H. Bucksbaum, A. L. Cavalieri, S. Engemann, S. Fahy, R. W. Falcone, P. H. Fuoss, K. J. Gaffney, M. J. George, J. Hajdu, M. P. Hertlein, P. B. Hillyard, M. Horn-von Hoegen, et al.,
    Science 315 (2007) p. 633
    DOI

  95. Domain Sensitive Contrast in Photoelectron Emission Microscopy,
    D. Thien, P. Kury, M. Horn- von Hoegen, F.-J. Meyer zu Heringdorf,
    Physical Review Letters 99 (2007) p. 196102
    DOI


  96. 2006


  97. Electromigration in Self-Organized Single-Crystalline Silver Nanowires,
    B. Stahlmecke, F.-J. Meyer zu Heringdorf, L. I. Chelaru, M. Horn-von Hoegen, G. Dumpich,
    Applied Physics Letters 88 (2006) p. 53122
    DOI

  98. Dynamics of an Ising chain under local excitation: An STM study of Si(100) dimer rows at T = 5K ,
    Y. Pennec, M. Horn-von Hoegen, Xiabobin Zhu, D.C. Fortin, M. R. Freeman,
    Physical Review Letters 96 (2006) p. 26102
    DOI

  99. Less strain energy despite fewer misfit dislocations: The impact of ordering,
    Th. Schmidt, R. Kröger, J.I. Flege, T. Clausen, J. Falta, A. Janzen, P. Zahl, P. Kury, M. Kammler, M. Horn-von Hoegen,
    Physical Review Letters 96 (2006) p. 66101
    DOI

  100. Ultrafast electron diffraction at surfaces after laser excitation,
    A. Janzen, B. Krenzer, P. Zhou, D. von der Linde, M. Horn-von Hoegen,
    Surface Science 600 (2006) p. 4094
    DOI

  101. Fringe Fields in Nonlinear Photoemission Microscopy,
    L.I. Chelaru, M. Horn-von Hoegen, D. Thien, F.-J. Meyer zu Heringdorf,
    Physical Review B 73 (2006) p. 115416
    DOI

  102. Thermal Boundary Conductance in Heterostructures Studied by Ultrafast Electron Diffraction,
    B. Krenzer, A. Janzen, P. Zhou, D. von der Linde, M. Horn-von Hoegen,
    New Journal of Physics 8 (2006) p. 190
    DOI

  103. Lattice accommodation of epitaxial Bi(111) films on Si(001) studied with SPA-LEED and AFM,
    G. Jnawali, H. Hattab, B. Krenzer, M. Horn-von Hoegen,
    Physical Review B 74 (2006) p. 195340
    DOI

  104. Energy relaxation and anomalies in the thermo-acoustic response of femtosecond laser-excited Germanium,
    K. Sokolowski-Tinten, U. Shymanovich, M. Nicoul, J. Blums, A. Tarasevitch, M. Horn-von-Hoegen, D. von der Linde, A. Morak, T. Wietler,
    Ultrafast Phenomena XV 88 (2006) p. 597
    DOI


  105. 2005


  106. SSIOD: the next generation,
    P. Kury, T. Grabosch, M. Horn-von Hoegen,
    Rev. Sci. Instrum. 76 (2005) p. 23903
    DOI

  107. Low energy electron diffraction of epitaxial growth of bismuth on Si(111),
    M. Kammler, M. Horn-von Hoegen,
    Surface Science 576 (2005) p. 56
    DOI

  108. Strain state analysis of hetero-epitaxial systems,
    A.A. AlFalou, M. Kammler, M. Horn-von Hoegen,
    Europhysics Letters 69(4) (2005) p. 570
    DOI

  109. Surfactant-mediated epitaxy of Ge on Si(111): beyond the surface,
    Th. Schmidt, R. Kröger, T. Clausen, J. Falta, A. Janzen, M. Kammler, P. Kury, P. Zahl, M. Horn-von Hoegen,
    Applied Physics Letters 86 (2005) p. 111910
    DOI

  110. High Temperature self-assembly of Ag nanowires on vicinal Si(001),
    K.R. Roos, K.L. Roos, M. Horn-von Hoegen, F.-J. Meyer zu Heringdorf,
    J. Phys.: Condens. Matter 17 (2005) p. 1407
    DOI

  111. Reciprocal Space Mapping by spot profile analyzing low energy electron diffraction,
    F.-J. Meyer zu Heringdorf, H. Pietsch, M. Horn-von Hoegen,
    Rev. Sci. Instrum. 76 (2005) p. 85102
    DOI

  112. Compact and transferable threefold evaporator for molecular beam epitaxy in ultrahigh vacuum ,
    P. Kury, R. Hild, D. Thien, H.-L. Günter, F.-J. Meyer zu Heringdorf, M. Horn-von Hoegen,
    Rev. Sci. Instrum. 76 (2005) p. 83906
    DOI

  113. Ultrafast X-Ray Diffraction,
    K. Sokolowski-Tinten, C. Blome, J. Blums, U. Shymanovich, M. Nicoul, A. Cavalleri, A. Tarasevitch, M. Horn-von Hoegen, M. Kammler, D. von der Linde,
    Ultrafast Phenomena XIV 79 (2005) p. 170
    DOI


  114. 2004


  115. Transition in growth mode by competing strain relaxation mechanisms: surfactant mediated epitaxy of SiGe alloys on Si,
    M. Kammler, M. Horn-von Hoegen,
    Applied Physics Letters 85 (2004) p. 3056
    DOI

  116. Direct observation of reconstruction induced changes of surface stress for Sb on Si(111),
    P. Kury, P. Zahl, M. Horn-von Hoegen,
    Analytical and Bioanalytical Chemistry 379 (2004) p. 582
    DOI

  117. Characterizing Single Crystal Surfaces using High Resolution Electron Diffraction,
    D. Thien, F.-J. Meyer zu Heringdorf , P. Kury , M. Horn-von Hoegen,
    Analytical and Bioanalytical Chemistry 379 (2004) p. 588
    DOI

  118. Impact of thermal dependence of elastic constants on surface stress measurements,
    Peter Kury, Michael Horn-von Hoegen,
    Rev. Sci. Instrum. 75 (2004) p. 1357
    DOI

  119. Precise calibration for surface stress induced optical deflection measurements,
    P. Kury, P. Zahl, M. Horn-von Hoegen,
    Rev. Sci. Instrum. 75 (2004) p. 2211
    DOI

  120. Strain relief during Ge hut cluster formation on Si(001) studied by high resolution LEED and surface-stress-induced optical deflection,
    M. Horn-von Hoegen, B.H. Müller, T. Grabosch, P. Kury,
    Physical Review B 70 (2004) p. 235313
    DOI

  121. Chopped sample heating for quantitative profile analysis of low energy electron diffraction spots at high temperatures,
    P. Kury, P. Zahl, M. Horn-von Hoegen, C. Voges, H. Frischat, H.-L. Günter, H. Pfnür, M. Henzler,
    Rev. Sci. Instrum. 75 (2004) p. 4911
    DOI


  122. 2003


  123. Femtosecond X-ray measurement of coherent lattice vibrations near the Lindemann stability limit,
    K. Sokolowski-Tinten, C. Blome, J. Blums, A. Cavalleri, C. Dietrich, A. Tarasevitch, I. Uschmann, E. Förster, M. Kammler, M. Horn-von Hoegen, D. von der Linde,
    Nature 422 (2003) p. 287
    DOI

  124. Ge on Si(001) - a hetero epitaxial playground for surface science,
    Michael Horn-von Hoegen,
    Surface Science 537 (2003) pp. 1-3
    DOI

  125. Finite collection time effects in autocovariance function measurements,
    A. Menzel, E.H. Conrad, M.C. Tringides, M. Kammler, M. Horn-von Hoegen,
    J. Appl. Phys. 93 (2003) pp. 2229-2235
    DOI


  126. 2002


  127. Self-organisation of Ge nanostructures on i(111): A SPA-LEED and STM Study,
    R. Hild, M. Kammler, I. Dumkow, and M. Horn-von Hoegen,
    Omicron Newsletter 5(3) (2002) p. 2

  128. Si(001)step dynamics: a temporal low-energy electron diffraction study,
    M. Kammler, M. Horn-von Hoegen, N. Voss, M. Tringides, A. Menzel, E.H. Conrad,
    Physical Review B 65 (2002) pp. 75312-75319
    DOI

  129. Third-generation generation cone-shaped SPA-LEED,
    P. Zahl and M. Horn-von Hoegen,
    Rev. Sci. Instrum. 73 (2002) pp. 2958-2962
    DOI

  130. Erratum to: Local Au coverage as driving force for Au induced faceting of vicinal Si(001):a LEEM and XPEEM study [Surf. Sci. 480 (2001) 103],
    Frank-J. Meyer zu Heringdorf, R. Hild, P. Zahl, Th. Schmidt, B. Ressel, S. Heun, E. Bauer, M. Horn-von Hoegen,
    Surface Science 496 (2002) p. 151
    DOI

  131. Kinetics of Au induced faceting of vicinal Si(111),
    R. Hild, C. Seifert, M. Kammler, F.-J. Meyer zu Heringdorf, M. Horn-von Hoegen, R. Zachuk, B. Z. Olshanetsky,
    Surface Science 512 (2002) pp. 117-127
    DOI

  132. Step and kink correlations on vicinal Ge(100) surfaces investigated by electron diffraction,
    Ch. Tegenkamp, J. Wollschläger, H. Pfnür, F.-J. Meyer zu Heringdorf, M. Horn-von Hoegen,
    Physical Review B 65 (2002) p. 235316
    DOI

  133. Time-Resolved X-ray Diffraction Study of Ultrafast Structural Dynamics in Laser-Excited Solids,
    K. Sokolowski-Tinten, C. Blome, C. Dietrich, A. Tarasevitch, M. Horn-von Hoegen, D. von der Linde, A. Cavalleri, J.A. Squier, M. Kammler,
    Ultrafast Phenomena XIII 71 (2002) p. 36
    Link


  134. 2001


  135. Surface dynamics of stepped Si(001) studied by temporal LEED spectroscopy,
    M. Kammler, M. Horn-von Hoegen, N. Voss, M. Tringides, A. Menzel, E.H. Conrad,
    Collective surface diffusion coefficients under non-equilibrium conditions, Vol. 29 of NATO Advanced (2001)
    DOI

  136. Spatial Variation of Au Coverage as the Driving Force for Nanoscopic Pattern Formation,
    Frank-J. Meyer zu Heringdorf, Th. Schmidt, S. Heun, R. Hild, P. Zahl, B. Ressel, E. Bauer, M. Horn-von Hoegen,
    Physical Review Letters 86 (2001) pp. 5088-5091
    DOI

  137. Local Au coverage as driving force for Au induced faceting of vicinal Si(001): a LEEM and XPEEM study,
    Frank-J. Meyer zu Heringdorf, R. Hild, P. Zahl, Th. Schmidt, B. Ressel, S. Heun, E. Bauer, M. Horn-von Hoegen,
    Surface Science 480 (2001) pp. 103-108
    DOI

  138. Au induced reconstructions on Si(111),
    C. Seifert, R. Hild, M. Horn-von Hoegen, R. Zachuk, B. Z. Olshanetsky,
    Surface Science 488 (2001) pp. 233-238
    DOI

  139. Ultrafast x-ray measurement of laser heating in semiconductors: Parameters determining the melting threshold",
    A. Cavalleri, C.W. Siders, C. Rose-Petruck, R. Jimenez, Cs. T?th, J. A. Squier, C. P. J. Barty, K. R. Wilson, K. Sokolowski-Tinten, M. Horn-von Hoegen, D. von der Linde,
    Physical Review B 63 (2001) p. 193306
    DOI

  140. Characterization of Ge deltadoped Si(111) with RBS-channeling,
    J. Yuhara, K. Morita, J. Falta, B.H. Müller and M. Horn-von Hoegen,
    Surface & Interface Analysis 31 (2001) pp. 754-760
    DOI

  141. Thermal activation of dislocation array formation,
    A. Janzen, I. Dumkow, M. Horn-von Hoegen,
    Applied Physics Letters 79 (2001) pp. 2387-2389
    DOI

  142. Femtosecond X-ray measurement of ultrafast melting and large acoustic transients,
    K. Sokolowski-Tinten, C. Blome, C. Dietrich, A. Tarasevitch, M. Horn-von Hoegen, D. von der Linde, A. Cavalleri, J. Squier, M. Kammler,
    Physical Review Letters 87 (2001) p. 225701
    DOI

  143. Transient lattice dynamics in fs-laser-excited semiconductors probed by ultrafast x-ray diffraction,
    K. Sokolowski-Tinten, M. Horn-von Hoegen, D. von der Linde, A. Cavalleri, C.W. Siders, F.L.H. Brown, D.M. Leitner, Cs. Toth, C.P.G. Barty, J.A. Squier, K.R. Wilson, M. Kammler,
    J. Phys. IV France 11 (2001) p. 2
    DOI


  144. 2000


  145. Direct observation of ultrafast non-thermal melting by ultrafast X-ray diffraction,
    C.W. Siders, A. Cavalleri, K. Sokolowski-Tinten, Cs. Toth, T. Guo, M. Kammler, M. Horn-von Hoegen, K.R. Wilson, D. von der Linde, C.P.J. Barty,
    Ultrafast Phenomena XII 66 (2000) p. 276
    DOI

  146. Au induced regular ordered striped domain wall structure of a (5x3) reconstruction on Si(001) studied by STM and SPA-LEED,
    R. Hild, F.-J. Meyer zu Heringdorf, P. Zahl and M. Horn-von Hoegen,
    Surface Science 454 (2000) pp. 851-855
    DOI

  147. Formation of hill and valley structures on Si(001) vicinal surfaces studied by spot-profile-analyzing LEED,
    H. Minoda, T. Shimakura, K. Yagi, F.-J. Meyer zu Heringdorf and M. Horn-von Hoegen,
    Physical Review B 61 (2000) pp. 5672-5678
    DOI

  148. Anharmonic lattice dynamics in Germanium measured with ultrafast x-ray diffraction,
    A. Cavalleri, C.W. Siders, F.L.H. Brown, D.M. Leitner, C. T?th, J.A. Squier, C.P.J. Barty, K.R. Wilson, K. Sokolowski-Tinten, M. Horn-von Hoegen, D. von der Linde, M. Kammler,
    Physical Review Letters 85 (2000) pp. 586-589
    DOI

  149. Hydrogen induced domain-wall structure on Si(113),
    F.-J. Meyer zu Heringdorf, H. Goldbach, H.L. Guenter, M. Horn-von Hoegen, V. Dorna, U. Koehler, M. Henzler,
    Surface Science 458 (2000) pp. 147-154
    DOI

  150. Time-resolved X-ray diffraction study of ultrafast acoustic phonon dynamics in Ge/Si heterostructures,
    K. Sokolowski-Tinten, A. Cavalleri, C. W. Siders, F.L.H. Brown, D. M. Leitner, Cs. Toth, M. Kammler, M. Horn-von Hoegen, D. von der Linde, J. A. Squier, C. P. J. Barty , K. R. Wilson,
    Ultrafast Phenomena XII 66 (2000) p. 281
    Link DOI


  151. 1999


  152. 3-dim. Reciprocal space mapping of a quasi periodic misfit dislocation array,
    M. Kammler, T. Schmidt, P. Zahl, P. Kury, J. Falta, and M. Horn-von Hoegen,
    HASYLAB/DESY Annual Report 0 (1999)
    Link

  153. Ultrafast movies of atomic motion with femtosecond laser-based X-rays,
    C. W. Siders, A. Cavalleri, K. Sokolowski-Tinten, T. Guo, C. Toth, R. Jimenez, C. Rose-Petruck, M. Kammler, M. Horn-von Hoegen, D. von der Linde, K. R. Wilson, C. P. J. Barty,
    SPIE Proceedings 3776 (1999) p. 302
    DOI

  154. Ag on Si surfaces: from insulator to metal,
    M. Horn-von Hoegen, M. Henzler and G. Meyer,
    Morphological Organization in Epitaxial Growth, Ed. Z. Zhang and M.G. Lagally, World Scientific (1999) pp. 403-420
    Link

  155. Surfactant-mediated epitaxy of Ge on Si: progress in growth and electrical characterization,
    M. Kammler, D. Reinking, K.R. Hofmann and M. Horn-von Hoegen,
    Thin Solid Films 336 (1999) pp. 29-33
    DOI

  156. Gold-induced faceting on a Si(001) vicinal surface: SPA-LEED and REM study,
    H. Minoda, K. Yagi, F.-J. Meyer zu Heringdorf, A. Meier, D. Kähler and M. Horn-von Hoegen,
    Physical Review B 59 (1999) pp. 2363-2375
    DOI

  157. Adsorbate induced giant faceting of vicinal Si(001),
    M. Horn-von Hoegen, F.-J. Meyer zu Heringdorf, R. Hild, P. Zahl, Th. Schmidt and E. Bauer,
    Thin Solid Films 336 (1999) pp. 16-21
    Link

  158. Bi surfactant mediated epitaxy of Ge on Si(111),
    M. Horn-von Hoegen, F.-J. Meyer zu Heringdorf, M. Kammler, C. Schaeffer, D. Reinking, and K.R. Hofmann,
    Thin Solid Films 343-344 (1999) pp. 579-582
    DOI

  159. Au induced giant faceting of vicinal Si(001),
    M. Horn-von Hoegen, F.-J. Meyer zu Heringdorf, R. Hild, P. Zahl, Th. Schmidt and E. Bauer,
    Surface Science 433-435 (1999) pp. 475-480
    DOI

  160. Fabrication of high-mobility Ge p-channel MOSFETs on Si substrates,
    D. Reinking, M. Kammler, N. Hoffmann, M. Horn-von Hoegen, K.R. Hofmann,
    Electronic Letters 35 (1999) pp. 503-504
    Link

  161. Gold-induced faceting on a Si(hhm) surface (m/h=1.4-1.5) studied by SPA-LEED,
    H. Minoda, T. Shimakura, K. Yagi, F.-J. Meyer zu Heringdorf, M. Horn-von Hoegen,
    Surface Science 432 (1999) pp. 69-80
    DOI

  162. Growth of semiconductor layers studied by spot profile analysis low energy electron diffraction,
    M. Horn-von Hoegen,
    Zeitschrift für Kristallographie 214 (1999) pp. 591-629
    Link

  163. Growth of semiconductor layers studied by spot profile analysis low energy electron diffraction,
    M. Horn-von Hoegen,
    Zeitschrift für Kristallographie 214 (1999) pp. 684-721
    Link

  164. Interplay of surface morphology and strain relief during surfactant mediated epitaxy of Ge on Si,
    P. Zahl, P. Kury, and M. Horn-von Hoegen,
    Applied Physics A 69 (1999) pp. 481-488
    DOI

  165. Ge p-MOSFETs Compatible with Si CMOS-Technology,
    D. Reinking, M. Kammler, N. Hoffmann, M. Horn-von Hoegen, K.R. Hofmann,
    Proceedings of the 29th ESSDERC 99 (1999) pp. 300-303
    Link

  166. Detection of nonthermal melting by ultrafast X-ray diffraction ,
    C.W. Siders, A. Cavalleri, K. Sokolowski-Tinten, Cs. Toth, T. Guo, M. Kammler, M. Horn-von Hoegen, K.R. Wilson, D. von der Linde, C.P.J. Barty,
    Science 286 (1999) pp. 1340-1342
    DOI

  167. Au induced giant faceting of vicinal Si(001),
    F.-J. Meyer zu Heringdorf, R. Hild, P. Zahl, M. Horn-von Hoegen, Th. Schmidt, S. Heun, B. Ressel, E. Bauer,
    Elettra Highlights 98-99 (1999) pp. 42-44
    Link


  168. 1998


  169. Strain Field of Periodic Dislocation Networks of SME grown Ge on Si(111),
    M. Kammler, J. Falta, P. Kury, B. H. Müller, T. Schmidt, and M. Horn-von Hoegen,
    HASYLAB/DESY Annual Report 0 (1998)
    Link

  170. Step arrangement control of vicinal Si(001) by Ag adsorption,
    A. Meier, P. Zahl, R. Vockenrodt and M. Horn-von Hoegen,
    Applied Surface Science 123/124 (1998) pp. 694-698
    DOI

  171. Macroscopic one-dimensional facetting of Si(100) upon Au adsorption,
    M. Horn-von Hoegen, H. Minoda, K. Yagi, F. Meyer zu Heringdorf and D. Kähler,
    Surface Science 402-404 (1998) pp. 464-469
    DOI

  172. Surfactant-grown low-doped Germanium layers on Silicon with high electron mobilities,
    K. Hofmann, D. Reinking, M. Kammler and M. Horn-von Hoegen,
    Thin Solid Films 321 (1998) pp. 125-130
    DOI

  173. X-ray characterization of buried delta layers,
    J. Falta, D. Bahr, G. Materlik, B.H. Müller and M. Horn-von Hoegen,
    Surface Review and Letters 5 (1998) pp. 145-149
    DOI

  174. Giant faceting of vicinal Si(001) induced by Au adsorption,
    F.-J. Meyer zu Heringdorf, Th. Schmidt, E. Bauer, D. Kähler, H. Minoda, K. Yagi and M. Horn-von Hoegen,
    Surface Review and Letters 5 (1998) pp. 1167-1178
    DOI

  175. High concentration Bi delta-doping layers on Si(001),
    J. Falta, O. Mielmann, T. Schmidt, A. Hille, C. Sanchez-Hanke, P. Sonntag, G. Materlik, F. Meyer zu Heringdorf, M. Kammler, M. Horn-von Hoegen, M. Copel,
    Applied Surface Science 123/124 (1998) pp. 538-541
    DOI

  176. Surface morphology changes due to adsorbates and due to electron bombardement,
    M. Henzler, D. Thielking, M. Horn-von Hoegen and V. Zielasek,
    Physica A 261 (1998) pp. 1-12
    DOI


  177. 1997


  178. Surfactant mediated heteroepitaxy: Interplay of diffusion, strain relief, and surface morphology,
    M. Horn-von Hoegen,
    Proc. NATO-ASI Workshop on Surface Diffusion: atomistic and Collective Processes, Eds. M.C. Tringide (1997)
    DOI

  179. Ag-mediated step-bunching instability on vicinal Si(100),
    S. Fölsch, G. Meyer, D. Winau, K.H. Rieder, M. Horn-von Hoegen, T. Schmidt and M. Henzler,
    Surface Science 394 (1997) pp. 60-70
    DOI

  180. Enhanced Sb segregation in surfactant-mediated heterogrowth: High-mobility, low-doped Ge on Si,
    D. Reinking, M. Kammler, M. Horn-von Hoegen and K. Hofmann,
    Applied Physics Letters 71 (1997) pp. 924-926
    DOI

  181. High electron mobilities in surfactant-grown Germanium on Silicon substrates,
    D. Reinking, M. Kammler, M. Horn-von Hoegen and K. Hofmann,
    Jpn. J. Appl. Phys. 36 (1997) pp. 1082-1085
    DOI


  182. 1996


  183. X-ray interface characterization of Ge delta layers on Si(001),
    D. Bahr, J. Falta, G. Materlik, B.H. Müller and M. Horn-von Hoegen,
    Physica B 221 (1996) pp. 96-100
    DOI

  184. Adsorbate induced change of equilibrium surface during crystal growth: Si on Si(111)/H,
    M. Horn-von Hoegen and A. Golla,
    Physical Review Letters 76 (1996) pp. 2953-2956
    DOI

  185. Towards perfect Ge delta layers on Si(001),
    J. Falta, D. Bahr, G. Materlik, B.H. Müller and M. Horn-von Hoegen,
    Applied Physics Letters 68 (1996) pp. 1394-1396
    DOI

  186. Stress reduction and interface quality of buried Sb delta-layers on Si(001),
    J. Falta, D. Bahr, A. Hille, G. Materlik, M. Kammler and M. Horn-von Hoegen,
    Applied Physics Letters 69 (1996) pp. 2906-2908
    DOI


  187. 1995


  188. Epitaxial layer growth of Ag(111)-films on Si(100),
    M. Horn-von Hoegen, T. Schmidt, G. Meyer, D. Winau and K.H. Rieder,
    Surface Science 331-333 (1995) pp. 575-579
    DOI

  189. Surfactants in Si(111) homoepitaxy,
    M. Horn-von Hoegen, J. Falta, M. Copel and R.M. Tromp,
    Applied Physics Letters 66 (1995) pp. 487-489
    DOI

  190. Interface roughening of Ge delta layers on Si(111),
    J. Falta, T. Gog, G. Materlik, B.H. Müller and M. Horn-von Hoegen,
    Physical Review B 51 (1995) p. 7598
    DOI

  191. Lattice accomodation of Si(001) and Ag(111),
    M. Horn-von Hoegen, T. Schmidt, M. Henzler, G. Meyer, D. Winau and K.H. Rieder,
    Physical Review B 52 (1995) pp. 10764-10767
    DOI

  192. Reconstruction dependent orientation of Ag(111) films on Si(001),
    S. Fölsch, G. Meyer, D. Winau, K.H. Rieder, T. Schmidt and M. Horn-von Hoegen,
    Physical Review B 52 (1995) pp. 13745-13748
    DOI

  193. Grundschritte der Epitaxie: Sichtbarmachung mit Elektronenbeugung und Rastertunnelmikroskopie,
    M. Henzler, M. Horn-von Hoegen and U. Köhler,
    Nova Acta Leopoldina NF 73 (1995) pp. 31-51

  194. Influence of H on low temperature Si(111) homoepitaxy,
    M. Horn-von Hoegen and A. Golla,
    Surface Science 337 (1995) pp. 777-782
    DOI

  195. Ag-induced multi-step formation on Si(001),
    S. Fölsch, G. Meyer, D. Winau, K.H. Rieder, M. Horn-von Hoegen, T. Schmidt and M. Henzler,
    Applied Physics Letters 67 (1995) pp. 2185-2187
    DOI


  196. 1994


  197. Surfactant-mediated growth of Ge on Si(111),
    M. Horn-von Hoegen, M. Copel, J. Tsang, M.C. Reuter and R.M. Tromp,
    Physical Review B 50 (1994) pp. 10811-10822
    DOI

  198. Surfactant-stabilized strained Ge cones on Si(100),
    M. Horn-von Hoegen, A. Al Falou, B.H. Müller, U. Köhler, L. Andersohn, B. Dahlheimer and M. Henzler,
    Physical Review B 49 (1994) pp. 2637-2650
    DOI

  199. Formation of lattice matching interfacial dislocation network in surfactant mediated growth of Ge on Si(111) by an in situ SPA-LEED study,
    M. Horn-von Hoegen,
    Proceedings : 4th international conference on the formation of semiconductor interfaces (ICSFI-4). E (1994)

  200. Lattice matching periodic interfacial dislocation network in surfactant-mediated growth of Ge on Si(111),
    M. Horn-von Hoegen and M. Henzler,
    Phys. Stat. Solidi (a) 146 (1994) pp. 337-352
    DOI

  201. Strain relief by micro roughness in surfactant mediated growth of Ge on Si(001),
    M. Horn-von Hoegen, B. H. Müller and A. Al Falou,
    Physical Review B 50 (1994) pp. 11640-11652
    DOI

  202. Surfactants: Perfect heteroepitaxy of Ge on Si(111),
    M. Horn-von Hoegen,
    Applied Physics A 59 (1994) pp. 503-515
    DOI

  203. Homoepitaxy of Si(111) is surface defect mediated,
    M. Horn-von Hoegen and H. Pietsch,
    Surface Science 321 (1994) pp. 129-136
    DOI

  204. Ge delta-Layers on Si(111) and Si(001) grown by MBE and SPE,
    J. Falta, T. Gog, G. Materlik, B.H. Müller and M. Horn-von Hoegen,
    MRS Proceedings 375 (1994) pp. 177-180
    DOI


  205. 1993


  206. The interplay of surface morphology and strain relief in surfactant mediated growth of Ge on Si(111),
    M. Horn-von Hoegen, M. Pook, A. Al Falou, B. H. Müller and M. Henzler,
    Surface Science 284 (1993) pp. 53-66
    DOI

  207. Surface morphology and strain relief in surfactant mediated growth of Ge on Si(111),
    M. Horn-von Hoegen, M. Pook, A. Al Falou, B. H. Müller and M. Henzler,
    Scanning Microscopy 7 (1993) pp. 481-488
    DOI

  208. Surfactant induced reversible changes of surface morphology,
    M. Horn-von Hoegen, B. H. Müller, A. Al Falou and M. Henzler,
    Physical Review Letters 71 (1993) pp. 3170-3173
    DOI

  209. Formation of the interfacial dislocation network in surfactant-mediated growth of Ge on Si(111) by SPALEED, Part I,
    M. Horn-von Hoegen, A. Al Falou, H. Pietsch, B. H. Müller and M. Henzler,
    Surface Science 298 (1993) pp. 29-42
    DOI


  210. 1992


  211. Layer-by -layer growth of germanium on Si(100): Strain induced morphology and the influence of surfactants,
    U. Köhler, O. Jusko, B. Müller, M. Horn-von Hoegen and M. Pook,
    Ultramicroscopy 42-44 (1992) pp. 832-837
    DOI

  212. Growth of monoatomic layers: investigations with electron diffraction and scanning tunneling microscopy,
    M. Henzler, M. Horn-von Hoegen and U. Köhler,
    Festkörperprobleme 32 (1992) p. 333
    DOI


  213. 1991


  214. Defect self-annihilation in surfactant-mediated epitaxial growth,
    M. Horn-von Hoegen, F.K. LeGoues, M. Copel, M.C. Reuter and R.M. Tromp,
    Physical Review Letters 67 (1991) p. 1130
    DOI

  215. A new two-dimensional particle detector for a toroidal electrostatic analyzer,
    R.M. Tromp, M. Copel, M.C. Reuter, M. Horn-von Hoegen and J. Speidell,
    Rev. Sci. Instrum. 62 (1991) p. 2679
    DOI

  216. Strain-relief mechanism in surfactant-grown epitaxial germanium films on Si(111),
    F.K. LeGoues, M. Horn-von Hoegen, M.Copel and R.M. Tromp,
    Physical Review B 44 (1991) pp. 12894-12902
    DOI


  217. 1990


  218. Influence of surfactants in Ge and Si epitaxy on Si(001),
    M. Copel, M.C. Reuter, M. Horn-von Hoegen and R.M. Tromp,
    Physical Review B 42 (1990) p. 11682
    DOI


  219. 1989


  220. SPA-LEED studies of defects in thin epitaxial NiSi2 layers on Si(111),
    J. Falta, M. Horn and M. Henzler,
    Applied Surface Science 41-42 (1989) pp. 230-235
    DOI

  221. The initial stages of growth of silicon on Si(111) by spot profile analysing low-energy electron diffraction,
    M. Horn-von Hoegen, J. Falta and M. Henzler,
    Thin Solid Films 183 (1989) pp. 213-220
    DOI


  222. 1988


  223. Nucleation and growth during molecular beam epitaxy (MBE) of Si on Si(111),
    R. Altsinger, H. Busch, M. Horn and M. Henzler,
    Surface Science 200 (1988) pp. 235-246
    DOI

  224. Crystal Growth Studies with LEED,
    M. Horn and M. Henzler,
    Proceedings of the 2nd Symposium of Surface Science in Kaprun, Österreich (1988)

  225. LEED investigations of Si MBE on Si(100),
    M. Horn, U. Gotter and M. Henzler,
    Proc. NATO-Workshop on RHEED and Reflection Electron Imaging of Surfaces. Eds.: P.K.Larsen und P.J.D 188 (1988)
    DOI

  226. Low-energy electron diffraction investigations of Si molecular-beam epitaxy on Si(100),
    M. Horn, U. Gotter and M. Henzler,
    J. Vac. Sci. Technol. B 6 (1988) pp. 727-730
    DOI


  227. 1987


  228. LEED studies of Si molecular beam epitaxy on Si(111),
    M. Horn and M. Henzler,
    Journal of Crystal Growth 81 (1987) pp. 428-433
    DOI