Prof. Dr. M. Horn-von Hoegen

Curriculum Vitae

​​Hvh 164

Experimentalphysik
Universität Duisburg-Essen
Lotharstraße 1-21
47057 Duisburg

Tel.: 0203 379-1438/1439
Fax: 0203 379-1555

horn-von-hoegen[at]uni-due.de

Position: Professor (C4)
Status: verheiratet, 3 Kinder
Akademische Ausbildung mit Abschluss
10/1979 - 09/1985 Physikstudium an der Universität Hannover, Diplom; Thema: SPA-LEED Untersuchungen der Epitaxie von Silizium auf Silizium, Betreuer: Prof. M. Henzler
Wissenschaftliche Abschlüsse
07/1997 Ernennung zum apl Professor an der Universität Hannover
07/1994 Habilitation im Fach Physik; Universität Hannover; Thema: Der Einfluss von Adsorbaten auf die Epitaxie, Mentor: Prof. M. Henzle
12/1988 Promotion in Physik (Dr. rer. nat.); Universität Hannover;
Thema: Wachstum und Keimbildung bei der Molekularstrahlepitaxie von Silizium auf der (111)-Fläche; Betreuer: Prof. M. Henzler
Beruflicher Werdegang ab Studienabschluss
07/1999 Amtsantritt an der Universität Duisburg
12/1998 Ruf auf eine C4 Professur am Institut für Laser- und Plasmaphysik der Universität Essen – Rufannahme 03/1999
08/1998 Ruf auf eine C3 Professur an die Technische Physik der TU Braunschweig, abgelehnt
10/1990 - 06/1999 Assistent/Oberassistent am Lehrstuhl für „Festkörperphysik“ an der Universität Hannover (Prof. M. Henzler)
06/1989 - 09/1990 Postdoc-Forschungsstipendium bei der IBM-Research Division, T.J. Watson Center, Yorktown Heights, New York, USA: "MEIS-Untersuchungen der Ge/Si-Heteroepitaxie mit Surfactants" (R.M. Tromp)
10/1985 - 05/1989 Wissenschaftlicher Mitarbeiter am Lehrstuhl für „Festkörperphysik“ an der Universität Hannover (Prof. M. Henzler)
Sonstiges
Mitgliedschaften: Deutsche Physikalische Gesellschaft (DPG),
Deutscher Hochschulverband,
Materials Research Society (MRS)
Funktionen: seit 2016:        Prodekan
2002 - 2013:   Sprecher des SFB 616 „Energiedissipation an Oberflächen“,
2009 - 2014:   stellvertretender Sprecher CENIDE,
seit 2005:        Vertrauensdozent der DFG an der Universität Duisburg-Essen
Auszeichnungen IBM PostDoc Fellowship (1989/90)
Heinz-Maier-Leibnitz-Preis für Chemie und Physik dünner Schichten und Schicht-systeme (1993)
iCORE Visiting-Professor-Grant-Award, University of Alberta, Canada (2004 & 2006)
Forschungsgebiete
  • Halbleiter- und Metall-Heteroepitaxie auf Silizium
  • Surfactant modifizierte Epitaxie von Ge auf Si
  • Gitterfehlanpassung und Verspannungsrelaxation in heteroepitaktischen Systemen
  • Manipulation von vizinalen Oberflächen durch Adsorbate
  • Selbstorganisation von Nanostrukturen auf Si-Oberflächen
  • Ultraschnelle zeitaufgelöste Elektronenbeugung an Oberflächen: nanoskaliger Wärmetransport, getriebene Phasenübergänge, Elektron-Phonon-Kopplung
  • 2D-Elektronentransport in Oberflächenzuständen, Manipulation von Oberflächenzuständen

Publikationen

185 Publications; 5467 Citations; h-factor = 38 (according to web of science / publons)
                                7793 Citations; h-factor = 42 (according to google scholar))

 

ResearchGate


    2019


  1. Decelerated lattice excitation and absence of bulk phonon modes at surfaces: Ultra-fast electron diffraction from Bi(111) surface upon fs-laser excitation,
    V. Tinnemann, C. Streubühr, B. Hafke, T. Witte, A. Kalus, A. Hanisch-Blicharski, M. Ligges, P. Zhou, D. von der Linde, U. Bovensiepen and M. Horn-von Hoegen,
    Structural Dynamics 6 (2019) p. 065101
    DOI

  2. A diffraction paradox: An unusually broad diffraction background signals ideal graphene,
    S. Chen, M. Horn von Hoegen, P.A. Thiel, M. Tringides,
    Physical Review B 110 (2019) p. 155307
    DOI

  3. Condensation of ground state from a supercooled phase in the Si(111)-(4×1)->(8×2)-indium atomic wire system,
    B. Hafke, T. Witte, D. Janoschka, P. Dreher, F.-J. Meyer zu Heringdorf and M. Horn-von Hoegen,
    Structural Dynamics 6 (2019) p. 045101
    DOI

  4. Temperature-Controlled Rotational Epitaxy of Graphene,
    K.M. Omambac, H. Hattab, C. Brand, G. Jnawali, A.T. N’Diaye, J. Coraux, R. von Gastel, B. Poelsema, T. Michely, F.-J. Meyer zu Heringdorf and M. Horn-von Hoegen,
    Nano Lett. 19 (2019) pp. 4594-4600
    DOI

  5. Ultrafast electron diffraction from a Bi(111) surface: Impulsive lattice excitation and Debye Waller analysis at large momentum transfer,
    V. Tinnemann, C. Streubühr, B. Hafke, A. Kalus, A. Hanisch-Blicharski, M. Ligges, P. Zhou, D. von der Linde, U. Bovensiepen and M. Horn-von Hoegen,
    Structural Dynamics 6 (2019) p. 035101
    DOI

  6. Pulsed electron gun for electron diffraction at surfaces with femtosecond temporal resolution and high coherence length,
    B. Hafke, T. Witte, C. Brand, Th. Duden and M. Horn-von Hoegen,
    Rev. Sci. Instrum. 90 (2019) p. 045119
    DOI

  7. Rapid onset of strain relief by massive generation of misfit dislocations in Bi(111)/Si(001) heteroepitaxy,
    D. Meyer, G. Jnawali, H. Hattab and M. Horn-von Hoegen,
    Applied Physics Letters 114 (2019) p. 081601
    DOI

  8. Spatio-Temporal Analysis of an Efficient Fresnel Grating Coupler for Focussing Surface Plasmon Polaritons,
    D. Podbiel, Ph. Kahl, B. Frank, T.J. Davis, H. Giessen, M. Horn-von Hoegen and F.J. Meyer zu Heringdorf,
    ACS Photonics 6(3) (2019) pp. 600-604
    DOI


  9. 2018


  10. Ultrafast switching in an atomic wire system at surfaces,
    M. Horn von Hoegen,
    MRSBulletin 43 (2018) pp. 512-519
    DOI

  11. Optically excited structural transition in atomic wires on surfaces at the quantum limit: a femtosecond ultrafast surface electron diffraction study,
    M. Horn von Hoegen,
    Proc. SPIE 10673 (2018) p. 1067304
    DOI

  12. Lateral heterostructures of hexagonal boron nitride and graphene: BCN alloy formation and microstructuring mechanism,
    M. Petrović, M. Horn-von Hoegen and F.-J. Meyer zu Heringdorf,
    Applied Surface Science 455 (2018) pp. 1086-1094
    DOI

  13. Non-equilibrium lattice dynamics of one-dimensional In chains on Si(111) upon ultrafast optical excitation,
    T. Frigge, B. Hafke, T. Witte, B. Krenzer and M. Horn-von Hoegen,
    Structural Dynamics 5(2) (2018) p. 025101
    DOI

  14. Direct Observation of Surface Plasmon Polariton Propagation and Interference by Time-Resolved Imaging in Normal-Incidence Two Photon Photoemission Microscopy,
    Ph. Kahl, D. Podbiel, Chr. Schneider, A. Makris, S. Sindermann, Chr. Witt, D. Kilbane, M. Horn-von Hoegen, M. Aeschlimann and F. Meyer zu Heringdorf,
    Plasmonics 13 (2018) pp. 239-246
    DOI


  15. 2017


  16. Imaging the Nonlinear Plasmoemission Dynamics of Electrons from Strong Plasmonic Fields,
    D. Podbiel, Ph. Kahl, A. Makris, B. Frank, S. Sindermann, T. J. Davis, H. Giessen, M. Horn-von Hoegen and F. Meyer zu Heringdorf,
    Nanoletters 17 (11) (2017) pp. 6569-6574
    DOI

  17. Short-range surface plasmonics: Localized electron emission dynamics from a 60-nm spot on an atomically flat single-crystalline gold surface,
    B. Frank, P. Kahl, D. Podbiel, G. Spektor, M. Orenstein, L. Fu, T. Weiss, M. Horn-von Hoegen, T.J. Davis, F.-J. Meyer zu Heringdorf and H. Giessen,
    Science Advances 3 (2017) p. 1700721
    DOI

  18. Nanoscale interfacial heat transport of ultrathin epitaxial hetero films: Few monolayer Pb(111) on Si(111),
    T. Witte, T. Frigge, B. Hafke, B. Krenzer, and M. Horn-von Hoegen,
    Applied Physics Letters 110 (2017) p. 243103
    DOI

  19. Microanalysis of single-layer hexagonal boron nitride islands on Ir(111),
    M. Petrović, U. Hagemann, M. Horn-von Hoegen and F.-J. Meyer zu Heringdorf,
    Applied Surface Science 420 (2017) pp. 504-510
    DOI

  20. Optically excited structural transition in atomic wires on surfaces at the quantum limit,
    T. Frigge, B. Hafke, T. Witte, B. Krenzer, C. Streubühr, A. Samad Syed, V. Mikšić Trontl, I. Avigo, P. Zhou, M. Ligges, D. von der Linde, U. Bovensiepen, M. Horn-von Hoegen, S. Wippermann, A. Lücke, S. Sanna, U. Gerstmann and W. G. Schmidt,
    Nature 544 (2017) pp. 207-211
    DOI


  21. 2016


  22. Thickness dependent electron-lattice equilibration in thin Bi films studied by time-resolved MeV electron diffraction,
    K. Sokolowski-Tinten, R. K. Li, A. H. Reid, S. P. Weathersby, F. Quirin, T. Chase, R. Coffee, J. Corbett, A. Fry, N. Hartmann, C. Hast, R. Hettel, M. Horn von Hoegen, D. Janoschka, M. Jermann, J. R. Lewandowski, M. Ligges, F. Meyer zu Heringdorf, M. Mo, X. Shen, T. Vecchione, C. Witt, J. Wu, H. A. D,
    Ultrafast Phenomena 0 (2016)
    DOI

  23. Decay of isolated hills and saddles on Si(001),
    P. Kirschbaum, L. Brendel, K. Roos, M. Horn-von Hoegen and F.-J. Meyer zu Heringdorf,
    Materials Research Express 3 (8) (2016)
    DOI

  24. Dy uniform film morphologies on graphene studied with SPA-LEED and STM,
    D. McDougall, H. Hattaba, M.T. Hershberger, M. Hupalo, M. Horn von Hoegen, P.A. Thiel and M.C. Tringides,
    Carbon 108 (2016) pp. 283-293
    DOI

  25. Two-dimensional interaction of spin chains in the Si(553)-Au nanowire system,
    B. Hafke, T. Frigge, T. Witte, B. Krenzer, J. Aulbach, J. Schäfer, R. Claessen, S. C. Erwin, and M. Horn-von Hoegen,
    Physical Review B 94 (2016) p. 161403
    DOI

  26. A combined STM and SPA-LEED study of the "explosive" nucleation and collective diffusion in Pb/Si(111),
    H. Hattab, M. Hupalo, M. Hershberger, M. Horn von Hoegen and M.C. Tringides,
    Surface Science 646 (2016) pp. 50-55
    DOI


  27. 2015


  28. Thickness-dependent electron-lattice equilibration in laser-excited thin Bismuth films,
    K. Sokolowski-Tinten, R.K. Li, A.H. Reid, S.P. Weathersby, F. Quirin, T. Chase, R. Coffee, J. Corbett, A. Fry, N. Hartmann, C. Hast, R. Hettel, M. Horn von Hoegen, D. Janoschka, J.R. Lewandowski, M. Ligges, F. Meyer zu Heringdorf, X. Shen, T. Vecchione, C. Witt, J. Wu, H.A. Dürr and X.J. Wang,
    New J. Phys. 17 (2015) p. 113047
    DOI

  29. Nanoscale thermal transport in selforganized epitaxial Ge nanostructures on Si(001),
    T. Frigge, B. Hafke, V. Tinnemann, T. Witte, B. Krenzer and M. Horn-von Hoegen,
    Semiconductor Science and Technology 30 (2015) p. 105027
    DOI

  30. Spot profile analysis and lifetime mapping in ultrafast electron diffraction: Lattice excitation of self-organized Ge nanostructures on Si(001),
    T. Frigge, B. Hafke, V. Tinnemann, T. Witte and M. Horn-von Hoegen,
    Structural Dynamics 2 (2015) p. 035101
    DOI

  31. Barrier-free subsurface incorporation of 3d metal atoms into Bi(111) films,
    C. Klein, N. J. Vollmers, U. Gerstmann, P. Zahl, D. Lükermann, G. Jnawali, H. Pfnür, C. Tegenkamp, P. Sutter, W. G. Schmidt, and M. Horn-von Hoegen,
    Physical Review B 91 (2015) p. 195441
    DOI

  32. Signatures of plasmoemission in two photon photoemission electron microscopy,
    F.-J. Meyer zu Heringdorf, P. Kahl, A. Makris, S. Sindermann, D. Podbiel and M. Horn-von Hoegen,
    SPIE Proceedings 9361 (2015)
    DOI

  33. Nanoscale heat transport from Ge hut, dome and relaxed clusters on Si(001) measured by ultrafast electron diffraction,
    T. Frigge, B. Hafke, V. Tinnemann, B. Krenzer and M. Horn-von Hoegen ,
    Applied Physics Letters 106 (2015) pp. 053108-1-053108-4
    DOI


  34. 2014


  35. In-situ high-resolution low energy electron diffraction study of strain relaxation in heteroepitaxy of Bi(111) on Si(001): Interplay of strain state, misfit dislocation array and lattice parameter,
    H. Hattab, G. Jnawali and M. Horn von Hoegen,
    Thin Solid Films 570 (2014) pp. 159-163
    DOI

  36. Comparing ultrafast surface and bulk heating using time-resolved electron diffraction,
    C. Streubühr, A. Kalus, P. Zhou, M. Ligges, A. Hanisch-Blicharski, M. Kammler, U. Bovensiepen, M. Horn-von Hoegen and D. von der Linde,
    Applied Physics Letters 104 (2014) p. 161611
    DOI

  37. Normal-Incidence Photoemission Electron Microscopy (NI-PEEM) for Imaging Surface Plasmon Polaritons,
    P. Kahl, S. Wall, C. Witt, C. Schneider, D. Bayer, A. Fischer, P. Melchior, M. Horn-von Hoegen, M. Aeschlimann and F.-J. Meyer zu Heringdorf,
    Plasmonics 9 (2014) pp. 1401-1407
    DOI

  38. Strain state, film and surface morphology of epitaxial topological insulator Bi2Se3 films on Si(111),
    C. Klein, M. Vyshnepolsky, A. Kompch, F. Klasing, A. Hanisch-Blicharski, M. Winterer and M. Horn-von Hoegen,
    Thin Solid Films 564 (2014) pp. 241-245
    DOI

  39. Hysteresis proves that the In/Si(111) (8x2) to (4x1) phase transition is first-order,
    F. Klasing, T. Frigge, B. Hafke, S. Wall, B. Krenzer, A. Hanisch-Blicharski, and M. Horn-von Hoegen,
    Physical Review B 89 (2014) p. 121107
    DOI


  40. 2013


  41. Frigge et al. Reply on "An Atomistic picture of charge density wave formation at surfaces",
    T. Frigge, S. Wall, B. Krenzer, St. Wippermann, S. Sanna, F. Klasing, A. Hanisch-Blicharski, M. Kammler, W. G. Schmidt, and M. Horn-von Hoegen,
    Physical Review Letters 111 (2013) p. 149602
    DOI

  42. Al-induced faceting of Si(113),
    C. Klein, I. Heidmann, T. Nabbefeld, M. Speckmann, T. Schmidt, F.-J. Meyer zu Heringdorf, J. Falta and M. Horn-von Hoegen,
    Surface Science 618 (2013) pp. 109-114
    DOI

  43. Epitaxial growth of the topological insulator Bi2Se3 on Si(111): Growth mode, lattice parameter and strain s,
    M. Vyshnepolsky, C. Klein, F. Klasing, A. Hanisch-Blicharski and M. Horn-von Hoegen,
    Applied Physics Letters 103/11 (2013) p. 111909
    DOI

  44. Mode conversion and long-lived vibrational modes in lead monolayers on silicon (111) after femtosecond laser excitation: A molecular dynamics simulation,
    S. Sakong, P. Kratzer, S. Wall, A. Kalus and M. Horn-von Hoegen,
    Physical Review B 88 (2013) p. 115419
    DOI

  45. Ultrafast laser-induced melting and ablation studied by time-resolved diffuse X-ray scattering,
    M. Nicoul, F. Quirin, A.M. Lindenberg, A. Barty, D.M. Fritz, D. Zhu, H. Lemke, M. Chollet, D.A. Reis, J. Chen, S. Ghimire, M. Trigo, M. Fuchs, K.J. Gaffney, J. Larsson, T. Becker, S. Meyer, T. Payer, F. Meyer zu Heringdorf, M. Horn-von Hoegen, M. Jerman and K. Sokolowski-Tinten,
    EPJ Web of Conferences 41 (2013) pp. 04013-1-04013-3
    DOI

  46. Effect of adsorbed magnetic and non-magnetic atoms on electronic transport through surfaces with strong spin-orbit coupling,
    D. Lükermann, S. Sologub, H. Pfnür, C. Klein, M. Horn-von Hoegen, and C. Tegenkamp,
    Materialwissenschaft und Werkstofftechnik 44 (2013) pp. 210-217
    DOI

  47. Ultrafast time resolved reflection high energy electron diffraction with tilted pump pulse fronts,
    P. Zhou, C. Streubühr, A. Kalus, T. Frigge, S. Wall, A. Hanisch-Blicharski, M. Kammler, M. Ligges, U. Bovensiepen, D. von der Linde and M. Horn-von Hoegen,
    EPJ Web of Conferences 41 (2013) pp. 10016-1-10016-3
    DOI

  48. Nanoscale heat transport in self-organized Ge clusters on Si(001),
    T. Frigge, A. Kalus, F. Klasing, M. Kammler, A. Hanisch-Blicharski and M. Horn-von Hoegen,
    MRS Proceedings 1456 (2013)
    DOI

  49. Ultra-fast electron diffraction at surfaces: From nanoscale heat transport to driven phase transitions,
    A. Hanisch-Blicharski, A. Janzen, B. Krenzer, S. Wall, F. Klasing, A. Kalus, T. Frigge, M. Kammler and M. Horn-von Hoegen,
    Ultramicroscopy 127 (2013) pp. 2-8
    DOI


  50. 2012


  51. Scattering at magnetic and nonmagnetic impurities on surfaces with strong spin-orbit coupling,
    D. Lükermann, S. Sologub, H. Pfnür, C. Klein, M. Horn-von Hoegen, and C. Tegenkamp,
    Physical Review B 86 (2012) p. 195432
    DOI

  52. Transient anisotropy in the electron diffraction of femtosecond laser-excited bismuth,
    P. Zhou, C. Streubühr, M. Ligges, T. Brazda, T. Payer, F. Meyer zu Heringdorf, M. Horn-von Hoegen and D. von der Linde,
    New Journal of Physics 14 (2012) p. 103031
    DOI

  53. An Atomistic picture of charge density wave formation at surfaces,
    S. Wall, B. Krenzer, S. Wippermann, S. Sanna, F. Klasing, A. Hanisch-Blicharski, M. Kammler, W.G. Schmidt, and M. Horn-von Hoegen,
    Physical Review Letters 109 (2012) p. 186101
    DOI

  54. Heat Transport through Interfaces with and without Misfit Dislocation Arrays,
    A. Hanisch-Blicharski, B. Krenzer, S. Wall, A. Kalus, T. Frigge and M. Horn-von Hoegen,
    Journal of Materials Research 27 (2012) pp. 2718-2723
    DOI

  55. Manipulation of Electronic Transport in the Bi(111) Surface State,
    G. Jnawali, C. Klein, Th. Wagner, H. Hattab, P. Zahl, D. P. Acharya, P. Sutter, A. Lorke and M. Horn-von Hoegen ,
    Physical Review Letters 108 (2012) p. 266804
    DOI

  56. High-quality epitaxial Bi(111) films on Si(111) by isochronal annealing,
    T. Payer, C. Klein, M. Acet, V. Ney, M. Kammler, F.-J. Meyer zu Heringdorf and M. Horn-von Hoegen,
    Thin Solid Films 520 (2012) pp. 6905-6908
    DOI

  57. Nanoscale Heat Transport through Epitaxial Ultrathin Hetero Films: Bi(111)/Si(001) and Bi(111)/Si(111) ,
    A. Hanisch-Blicharski, S. Wall, A. Kalus, T. Frigge and M. Horn-von Hoegen,
    MRS Proceedings MRSF11-1404-W02-08 (2012)
    DOI

  58. Interplay of wrinkles, strain, and lattice parameter in Graphene layers on Iridium,
    H. Hattab, A.T. N'Diaye, D. Wall, C. Klein, G. Jnawali, J. Coraux, C. Busse, R. van Gastel, B. Poelsema, T. Michely, F.-J. Meyer zu Heringdorf and M. Horn-von Hoegen ,
    Nanoletters 12 (2012) pp. 678-682
    DOI


  59. 2011


  60. Epitaxial Ag Nanowires with a Single Grain Boundary for Electromigration,
    S. Sindermann, C. Witt, D. Spoddig, M. Horn-von Hoegen, G. Dumpich, and F.-J. Meyer zu Heringdorf,
    Rev. Sci. Instrum. 82 (2011) p. 123907
    DOI

  61. Dynamics of Reconstructed Zones Formed Around Islands on Si During Desorption: Diffusion Made Visible,
    F. Meyer zu Heringdorf, D. Wall, K.R. Roos, I. Lohmar, J. Krug and M. Horn-von Hoegen,
    Proceedings of the ALC 11 Conference 0 (2011) p. 372


  62. Shape, orientation, and crystalline composition of silver islands on Si(111),
    D. Wall, S. Tikhonov, S. Sindermann, D. Spoddig, C. Hassel, M. Horn-von Hoegen, and F. Meyer zu Heringdorf,
    IBM Journal of Research and Development 55(4) (2011) pp. 9:1-9:6
    DOI

  63. Transient reversal of a Peierls-transition: Extreme phonon softening in laser-excited Bismuth,
    Wei L., M. Nicoul, U. Shymanovich, A. Tarasevitch, M. Kammler, M. Horn-von Hoegen, D. von der Linde and K. Sokolowski-Tinten,
    Ultrafast Phenomena XVII (2011) p. 314


  64. Growth temperature dependent graphene alignment on Ir(111),
    H. Hattab, A.T. N'Diaye, D. Wall, G. Jnawali, J. Coraux, C. Busse, R. van Gastel, B. Poelsema, T. Michely, F.-J. Meyer zu Heringdorf, and M. Horn-von Hoegen ,
    Applied Physics Letters 98 (2011) p. 141903
    DOI

  65. Atomically smooth epitaxial p-doped silicon nanowires catalyzed by aluminum at low-temperature,
    O. Moutanabbir, S. Senz, R. Scholz, M. Alexe, Y. Kim, Yuwe Wang, C. Wiethoff, T. Nabbefeld, F. Meyer zu Heringdorf and M. Horn-von Hoegen ,
    ACS Nano 5 (2) (2011) pp. 1313-1320
    DOI

  66. Lost in reciprocal space? Determination of scattering condition in spot profile analysis low energy electron diffraction,
    C. Klein, T. Nabbefeld, H. Hattab, D. Meyer, G. Jnawali, M. Kammler, F. Meyer zu Heringdorf, A. Golla-Franz, B.H Müller, Th. Schmidt, M. Henzler, and M. Horn-von Hoegen ,
    Rev. Sci. Instrum. 82 (2011) p. 35111
    DOI


  67. 2010


  68. Anisotropy of Ag Diffusion on Vicinal Si Surfaces,
    S. Sindermann, D. Wall, K.R. Roos, M. Horn-von Hoegen and F.-J. Meyer zu Heringdorf,
    e-Journal of Surface Science and Nanotechnology 8 (2010) pp. 372-376
    DOI

  69. Two-dimensional electron transport and scattering in Bi(111) surface states,
    G. Jnawali, Th. Wagner, H. Hattab, R. Möller, A. Lorke and M. Horn-von Hoegen,
    e-Journal of Surface Science and Nanotechnology 8 (2010) p. 27
    DOI

  70. Extreme phonon softening in laser-excited Bismuth - towards an inverse Peierls-transition,
    Wei L., M. Nicoul, U. Shymanovich, A. Tarasevitch, M. Kammler, M. Horn-von Hoegen, D. von der Linde and K. Sokolowski-Tinten,
    MRS Proceedings 1230E (2010) p. 3
    DOI

  71. The role of thermal and electronic pressure in the picosecond acoustic response of femtosecond laser-excited solids,
    U. Shymanovich, M. Nicoul, S. Kähle, Wei Lu, A. Tarasevitch, Ping Zhou, T. Wietler, M. Horn-von Hoegen, D. von der Linde and K. Sokolowski-Tinten,
    MRS Proceedings 1230E (2010) p. 6
    DOI

  72. Silver Induced Faceting of Si(112),
    T. Nabbefeld, C. Wiethoff, F.-J. Meyer zu Heringdorf and M. Horn-von Hoegen,
    Applied Physics Letters 97 (2010) p. 41905
    DOI

  73. Coherent acoustic and optical phonons in laser-excited solids studied by ultrafast time-resolved X-ray diffraction,
    U. Shymanovich, M. Nicoul, W. Lu, A. Tarasevitch, M. Kammler, M. Horn-von Hoegen, D. von der Linde and K. Sokolowski-Tinten,
    High-Power Laser Ablation 2010, AIP Conf. Proc. 1278 (2010) p. 558
    DOI

  74. Imaging diffusion fields on a surface with multiple reconstructions: Ag/Si(111) ,
    D. Wall, I. Lohmar, K.R. Roos, J. Krug, M. Horn-von Hoegen and F.-J. Meyer zu Heringdorf,
    New Journal of Physics 12 (2010) p. 103019
    DOI

  75. Steering the growth and watching the strain of epitaxial graphene on Iridium(111),
    A.T. N'Diaye, R. van Gastel, A.J. Martinez-Galera, J. Coraux, H. Hattab, D. Wall, F.-J. Meyer zu Heringdorf, M. Horn-von Hoegen, J.M. Gomez-Rodriguez, B. Poelsema, C. Busse and Th. Michely,
    IMC17 Conference Proceedings (2010) p. 11.4


  76. High temperature surface diffusion involving multiple reconstructions: Ag/Si(111),
    D. Wall, I. Lohmar, K.R. Roos, J. Krug, F.-J. Meyer zu Heringdorf and M. Horn-von Hoegen,
    IMC17 Conference Proceedings (2010) p. 11511



  77. 2009


  78. Ultra-fast time-resolved electron diffraction of strongly driven phase transitions on silicon surfaces,
    S. Möllenbeck, A. Hanisch-Blicharski, P. Schneider, M. Ligges, P. Zhou, M. Kammler, B. Krenzer and M. Horn-von Hoegen,
    MRS Proceedings 1230-MM03-09 (2009) pp. 3-9
    DOI

  79. Epitaxial growth of Bi(111) on Si(001),
    G. Jnawali, H. Hattab, C. A. Bobisch, E. Zubkov, C. Deiter, T. Weisemoeller, F. Bertram, J. Wollschläger, R. Möller and M. Horn-von Hoegen,
    e-Journal of Surface Science and Nanotechnology 7 (2009) pp. 441-447
    DOI

  80. Stable tungsten silicide contacts for surface sensitive conductivity measurements,
    G. Jnawali, F.-J. Meyer zu Heringdorf, D. Wall, S. Sindermann and M. Horn-von Hoegen,
    J. Vac. Sci. Technol. B B27 (2009) p. 180
    DOI

  81. Nucleation and initial growth in the semimetallic homoepitaxial system of Bi on Bi(111),
    G. Jnawali, Th. Wagner, H. Hattab, R. Möller and M. Horn-von Hoegen,
    Physical Review B B79 (2009) p. 193306
    DOI

  82. Nanoscale dislocation patterning in Bi(111)/Si(001) heteroepitaxy,
    G. Jnawali, H. Hattab, C.A. Bobisch, A. Bernhart, E. Zubkov, R. Möller and M. Horn-von Hoegen,
    Surface Science 603 (2009) p. 2057
    DOI

  83. Space charge effects in photoemission electron microscopy using amplifed femtosecond laser pulses,
    N. M. Buckanie, J. Göhre, P. Zhou, D. von der Linde, M. Horn-von Hoegen and F.-J. Meyer zu Heringdorf,
    J. Phys.: Condens. Matter 21 (2009) p. 314003
    Link

  84. The influence of anisotropic diffusion on Ag nanowire formation,
    D. Wall, S. Sindermann, M. Horn-von Hoegen and F.-J. Meyer zu Heringdorf,
    J. Phys.: Condens. Matter 21 (2009) p. 314023
    Link

  85. Electronic acceleration of atomic motions and disordering in bismuth,
    G. Sciaini, M. Harb, S. G. Kruglik, T. Payer, C. T. Hebeisen, F.-J. Meyer zu Heringdorf, M. Yamaguchi, M. Horn-von Hoegen, R. Ernstorfer and R. J. Dwayne Miller,
    Nature 458 (2009) pp. 56-59
    DOI

  86. Phonon confinement effects in ultra-thin, epitaxial Bismuth-films on Silicon studied by time-resolved electron diffraction,
    B. Krenzer, A. Hanisch-Blicharski, P. Schneider, Th. Payer, S. Möllenbeck, O. Osmani, M. Kammler, R. Meyer and M. Horn-von Hoegen,
    Physical Review B B80 (2009) p. 24307
    DOI

  87. Atomic View of the Photoinduced Collapse of Gold and Bismuth,
    R. Ernstorfer, M. Harb, C.T. Hebeisen, G. Sciaini, T. Dartigalongue, I. Rajkovic,M. Ligges, D. von der Linde, Th. Payer, M. Horn-von-Hoegen, F.-J. Meyer zu Heringdorf, S. Kruglik and R.J.D. Miller,
    Ultrafast Phenomena XVI 92 (2009) pp. 113-115
    DOI

  88. Electron-phonon energy transfer in Bi observed by time resolved electron diffraction,
    I. Rajkovic,M. Ligges, P. Zhou, Th. Payer, F.-J. Meyer zu Heringdorf, M. Horn-von-Hoegen and D. von der Linde,
    Ultrafast Phenomena XVI 92 (2009) pp. 110-112
    DOI

  89. Selecting a single orientation for millimeter sized graphene sheets,
    R. van Gastel, A.T. N'Diaye, D. Wall, J. Coraux, C. Busse, N.M. Buckanie, F.-J. Meyer zu Heringdorf, M. Horn-von Hoegen, T. Michely and B. Poelsema,
    Applied Physics Letters 95 (2009) p. 121901
    DOI

  90. In situ observation of stress relaxation in epitaxial graphene,
    A.T. N'Diaye, R. van Gastel, G. Martinez, J. Coraux, H. Hattab, F.-J. Meyer zu Heringdorf, D. Wall, M. Horn-von Hoegen, J.-M. Gomez-Rodriguez, B. Poelsema, C. Busse and T. Michely,
    New Journal of Physics 11 (2009) p. 113056
    DOI

  91. Transient Cooling of Ultrathin Epitaxial Bi(111)-Films on Si(111) upon Femtosecond Laser Excitation Studied by Ultrafast Reflection High Energy Electron Diffraction",
    A. Hanisch-Blicharski, B. Krenzer, S. Möllenbeck, M. Ligges, P. Zhou, M. Kammler and M. Horn-von Hoegen,
    MRS Proceedings 1172 (2009) pp. 4-8
    Link


  92. 2008


  93. Nanopattern Formation by Periodic Array of Interfacial Misfit Dislocations in Bi(111)/Si(001) Heteroepitaxy,
    G. Jnawali, H. Hattab, C. Bobisch, A. Bernhart, E. Zubkov, F.-J. Meyer zu Heringdorf, R.Möller, B. Krenzer and M. Horn-von Hoegen,
    MRS Proceedings (2008)
    Link

  94. Absence of surface stress change during pentacene thin film growth on the Si(111)-(7x7) surface: a buried reconstruction interface,
    P. Kury, K.R. Roos, M. Horn- von Hoegen and F.-J. Meyer zu Heringdorf,
    New Journal of Physics 10 (2008) p. 23037
    DOI

  95. Disorder-mediated ordering by self-interfactant effect in organic thin film growth of pentacene on silicon,
    P. Kury, K.R. Roos, D. Thien, S. Möllenbeck, D. Wall, M. Horn- von Hoegen and F.-J. Meyer zu Heringdorf,
    Organic Electronics 9 (2008) p. 461
    DOI

  96. Growth of Ag nanowires on Au-pre-facetted 4? vicinal Si(0 0 1),
    F.-J. Meyer zu Heringdorf, K.L. Roos, Chr. Wiethoff, M. Horn- von Hoegen and K.R. Roos,
    Surface Science 602 (2008) pp. 1852-1857
    DOI

  97. Real-Time View of Mesoscopic Surface Diffusion,
    K.R. Roos, K.L. Roos, I. Lohmar, D. Wall, J. Krug, M. Horn- von Hoegen and F.-J. Meyer zu Heringdorf,
    Physical Review Letters 100 (2008) p. 16103
    DOI

  98. Epitaxial Bi(111) films on Si(001): Strain state, surface morphology, and defect structure,
    H. Hattab, E. Zubkov, A. Bernhart, G. Jnawali, C.Bobisch, B. Krenzer, M. Acet, R. Möller and M. Horn-von Hoegen,
    Thin Solid Films 516 (2008) p. 8227
    DOI

  99. Thermal response of epitaxial thin Bi films on Si(001) upon femtosecond laser excitation studied by ultrafast electron diffraction,
    A. Hanisch, B. Krenzer, T. Pelka, S. Möllenbeck and M. Horn-von Hoegen,
    Physical Review B 77 (2008) p. 125410
    DOI

  100. Heat transport in nanoscale heterosystems: a numerical simulation and analytical solution,
    B. Krenzer, A. Hanisch, A. Janzen, A. Duvenbeck, B. Rethfeld and M. Horn-von Hoegen,
    Journal of Nanomaterials 2008 (2008) p. 590609
    DOI

  101. Homoepitaxial growth of Bi(111),
    G. Jnawali, H. Hattab, C. Bobisch, A. Bernhart, E. Zubkov, R. Möller and M. Horn-von Hoegen,
    Physical Review B 78 (2008) p. 35321
    DOI

  102. Au stabilization and coverage of sawtooth facets on Si nanowires grown by vapor-liquid-solid epitaxy,
    C. Wiethoff, F.M. Ross, M. Copel, M. Horn-von Hoegen and F.-J. Meyer zu Heringdorf,
    Nanoletters 8 (2008) p. 3065
    DOI

  103. Ultrathin Epitaxially Grown Bismuth (111) Membranes,
    T. Payer, I. Rajkovic, M. Ligges, D. von der Linde, M. Horn-von Hoegen and F.-J. Meyer zu Heringdorf,
    Applied Physics Letters 93 (2008) p. 93102
    DOI

  104. LEEM/PEEM Study of Anisotropic Diffusion Fields in the Ag/Si(001) System,
    D. Wall, K. R. Roos, M. Horn-von Hoegen and F.-J. Meyer zu Heringdorf,
    MRS Proceedings 1088E (2008)
    Link


  105. 2007


  106. A pulsed electron gun for ultrafast electron diffraction at surfaces,
    A. Janzen, B. Krenzer, O. Heinz, P. Zhou, D. Thien, A. Hanisch, F.-J., Meyer zu Heringdorf, D. von der Linde and M. Horn-von Hoegen,
    Rev. Sci. Instrum. 78 (2007) p. 13906
    DOI

  107. Diffraction of strongly convergent X-rays from picosecondacoustic transients,
    U. Shymanovich, M. Nicoul, J. Blums, K. Sokolowski-Tinten, A.Tarasevitch, T. Wietler, M. Horn-von Hoegen and D. von der Linde,
    Applied Physics A 87 (2007) p. 7
    DOI

  108. Lattice-matching periodic array of misfit dislocations: Heteroepitaxy of Bi(111) on Si(001),
    G. Jnawali, H. Hattab, F.-J. Meyer zu Heringdorf, B. Krenzer and M. Horn- von Hoegen,
    Physical Review B 76 (2007) p. 35337
    DOI

  109. Femtosecond photoemission microscopy,
    F.-J. Meyer zu Heringdorf, L.I. Chelaru, S. Möllenbeck, D. Thien and M. Horn-von Hoegen,
    Surface Science 601 (2007) p. 4700
    DOI

  110. Ultrafast bond softening in Bismuth: Mapping a solid`s interatomic potential with X-rays,
    D. M. Fritz, D. A. Reis, B. Adams, R. A. Akre, J. Arthur, C. Blome, P. H. Bucksbaum, A. L. Cavalieri, S. Engemann, S. Fahy, R. W. Falcone, P. H. Fuoss, K. J. Gaffney, M. J. George, J. Hajdu, M. P. Hertlein, P. B. Hillyard, M. Horn-von Hoegen, et al.,
    Science 315 (2007) p. 633
    DOI

  111. Domain Sensitive Contrast in Photoelectron Emission Microscopy,
    D. Thien, P. Kury, M. Horn- von Hoegen and F.-J. Meyer zu Heringdorf,
    Physical Review Letters 99 (2007) p. 196102
    DOI


  112. 2006


  113. Electromigration in Self-Organized Single-Crystalline Silver Nanowires,
    B. Stahlmecke, F.-J. Meyer zu Heringdorf, L. I. Chelaru, M. Horn-von Hoegen and G. Dumpich,
    Applied Physics Letters 88 (2006) p. 53122
    DOI

  114. Dynamics of an Ising chain under local excitation: An STM study of Si(100) dimer rows at T = 5K ,
    Y. Pennec, M. Horn-von Hoegen, Xiabobin Zhu, D.C. Fortin and M. R. Freeman,
    Physical Review Letters 96 (2006) p. 26102
    DOI

  115. Less strain energy despite fewer misfit dislocations: The impact of ordering,
    Th. Schmidt, R. Kröger, J.I. Flege, T. Clausen, J. Falta, A. Janzen, P. Zahl, P. Kury, M. Kammler and M. Horn-von Hoegen,
    Physical Review Letters 96 (2006) p. 66101
    DOI

  116. Ultrafast electron diffraction at surfaces after laser excitation,
    A. Janzen, B. Krenzer, P. Zhou, D. von der Linde and M. Horn-von Hoegen,
    Surface Science 600 (2006) p. 4094
    DOI

  117. Fringe Fields in Nonlinear Photoemission Microscopy,
    L.I. Chelaru, M. Horn-von Hoegen, D. Thien and F.-J. Meyer zu Heringdorf,
    Physical Review B 73 (2006) p. 115416
    DOI

  118. Thermal Boundary Conductance in Heterostructures Studied by Ultrafast Electron Diffraction,
    B. Krenzer, A. Janzen, P. Zhou, D. von der Linde and M. Horn-von Hoegen,
    New Journal of Physics 8 (2006) p. 190
    DOI

  119. Lattice accommodation of epitaxial Bi(111) films on Si(001) studied with SPA-LEED and AFM,
    G. Jnawali, H. Hattab, B. Krenzer and M. Horn-von Hoegen,
    Physical Review B 74 (2006) p. 195340
    DOI

  120. Energy relaxation and anomalies in the thermo-acoustic response of femtosecond laser-excited Germanium,
    K. Sokolowski-Tinten, U. Shymanovich, M. Nicoul, J. Blums, A. Tarasevitch, M. Horn-von-Hoegen, D. von der Linde, A. Morak and T. Wietler,
    Ultrafast Phenomena XV 88 (2006) p. 597
    DOI


  121. 2005


  122. SSIOD: the next generation,
    P. Kury, T. Grabosch and M. Horn-von Hoegen,
    Rev. Sci. Instrum. 76 (2005) p. 23903
    DOI

  123. Low energy electron diffraction of epitaxial growth of bismuth on Si(111),
    M. Kammler and M. Horn-von Hoegen,
    Surface Science 576 (2005) p. 56
    DOI

  124. Strain state analysis of hetero-epitaxial systems,
    A.A. AlFalou, M. Kammler and M. Horn-von Hoegen,
    Europhysics Letters 69(4) (2005) p. 570
    DOI

  125. Surfactant-mediated epitaxy of Ge on Si(111): beyond the surface,
    Th. Schmidt, R. Kröger, T. Clausen, J. Falta, A. Janzen, M. Kammler, P. Kury, P. Zahl and M. Horn-von Hoegen,
    Applied Physics Letters 86 (2005) p. 111910
    DOI

  126. High Temperature self-assembly of Ag nanowires on vicinal Si(001),
    K.R. Roos, K.L. Roos, M. Horn-von Hoegen and F.-J. Meyer zu Heringdorf,
    J. Phys.: Condens. Matter 17 (2005) p. 1407
    DOI

  127. Reciprocal Space Mapping by spot profile analyzing low energy electron diffraction,
    F.-J. Meyer zu Heringdorf, H. Pietsch and M. Horn-von Hoegen,
    Rev. Sci. Instrum. 76 (2005) p. 85102
    DOI

  128. Compact and transferable threefold evaporator for molecular beam epitaxy in ultrahigh vacuum ,
    P. Kury, R. Hild, D. Thien, H.-L. Günter, F.-J. Meyer zu Heringdorf and M. Horn-von Hoegen,
    Rev. Sci. Instrum. 76 (2005) p. 83906
    DOI

  129. Ultrafast X-Ray Diffraction,
    K. Sokolowski-Tinten, C. Blome, J. Blums, U. Shymanovich, M. Nicoul, A. Cavalleri, A. Tarasevitch, M. Horn-von Hoegen, M. Kammler and D. von der Linde,
    Ultrafast Phenomena XIV 79 (2005) p. 170
    DOI


  130. 2004


  131. Transition in growth mode by competing strain relaxation mechanisms: surfactant mediated epitaxy of SiGe alloys on Si,
    M. Kammler and M. Horn-von Hoegen,
    Applied Physics Letters 85 (2004) p. 3056
    DOI

  132. Direct observation of reconstruction induced changes of surface stress for Sb on Si(111),
    P. Kury, P. Zahl and M. Horn-von Hoegen,
    Analytical and Bioanalytical Chemistry 379 (2004) p. 582
    DOI

  133. Characterizing Single Crystal Surfaces using High Resolution Electron Diffraction,
    D. Thien, F.-J. Meyer zu Heringdorf , P. Kury and M. Horn-von Hoegen,
    Analytical and Bioanalytical Chemistry 379 (2004) p. 588
    DOI

  134. Impact of thermal dependence of elastic constants on surface stress measurements,
    Peter Kury and Michael Horn-von Hoegen,
    Rev. Sci. Instrum. 75 (2004) p. 1357
    DOI

  135. Precise calibration for surface stress induced optical deflection measurements,
    P. Kury, P. Zahl and M. Horn-von Hoegen,
    Rev. Sci. Instrum. 75 (2004) p. 2211
    DOI

  136. Strain relief during Ge hut cluster formation on Si(001) studied by high resolution LEED and surface-stress-induced optical deflection,
    M. Horn-von Hoegen, B.H. Müller, T. Grabosch and P. Kury,
    Physical Review B 70 (2004) p. 235313
    DOI

  137. Chopped sample heating for quantitative profile analysis of low energy electron diffraction spots at high temperatures,
    P. Kury, P. Zahl, M. Horn-von Hoegen, C. Voges, H. Frischat, H.-L. Günter, H. Pfnür and M. Henzler,
    Rev. Sci. Instrum. 75 (2004) p. 4911
    DOI


  138. 2003


  139. Femtosecond X-ray measurement of coherent lattice vibrations near the Lindemann stability limit,
    K. Sokolowski-Tinten, C. Blome, J. Blums, A. Cavalleri, C. Dietrich, A. Tarasevitch, I. Uschmann, E. Förster, M. Kammler, M. Horn-von Hoegen and D. von der Linde,
    Nature 422 (2003) pp. 287-289
    DOI

  140. Ge on Si(001) - a hetero epitaxial playground for surface science,
    M. Horn-von Hoegen,
    Surface Science 537 (2003) pp. 1-3
    DOI

  141. Finite collection time effects in autocovariance function measurements,
    A. Menzel, E.H. Conrad, M.C. Tringides, M. Kammler and M. Horn-von Hoegen,
    Journal of Applied Physics 93 (2003) pp. 2229-2235
    DOI


  142. 2002


  143. Self-organisation of Ge nanostructures on i(111): A SPA-LEED and STM Study,
    R. Hild, M. Kammler, I. Dumkow, and M. Horn-von Hoegen,
    Omicron Newsletter 5(3) (2002) p. 2


  144. Si(001)step dynamics: a temporal low-energy electron diffraction study,
    M. Kammler, M. Horn-von Hoegen, N. Voss, M. Tringides, A. Menzel and E.H. Conrad,
    Physical Review B 65 (2002) pp. 75312-75319
    DOI

  145. Third-generation generation cone-shaped SPA-LEED,
    P. Zahl and M. Horn-von Hoegen,
    Rev. Sci. Instrum. 73 (2002) pp. 2958-2962
    DOI

  146. Erratum to: Local Au coverage as driving force for Au induced faceting of vicinal Si(001):a LEEM and XPEEM study [Surf. Sci. 480 (2001) 103],
    Frank-J. Meyer zu Heringdorf, R. Hild, P. Zahl, Th. Schmidt, B. Ressel, S. Heun, E. Bauer and M. Horn-von Hoegen,
    Surface Science 496 (2002) p. 151
    DOI

  147. Kinetics of Au induced faceting of vicinal Si(111),
    R. Hild, C. Seifert, M. Kammler, F.-J. Meyer zu Heringdorf, M. Horn-von Hoegen, R. Zachuk and B. Z. Olshanetsky,
    Surface Science 512 (2002) pp. 117-127
    DOI

  148. Step and kink correlations on vicinal Ge(100) surfaces investigated by electron diffraction,
    Ch. Tegenkamp, J. Wollschläger, H. Pfnür, F.-J. Meyer zu Heringdorf and M. Horn-von Hoegen,
    Physical Review B 65 (2002) p. 235316
    DOI

  149. Time-Resolved X-ray Diffraction Study of Ultrafast Structural Dynamics in Laser-Excited Solids,
    K. Sokolowski-Tinten, C. Blome, C. Dietrich, A. Tarasevitch, M. Horn-von Hoegen, D. von der Linde, A. Cavalleri, J.A. Squier and M. Kammler,
    Ultrafast Phenomena XIII 71 (2002) p. 36
    Link


  150. 2001


  151. Surface dynamics of stepped Si(001) studied by temporal LEED spectroscopy,
    M. Kammler, M. Horn-von Hoegen, N. Voss, M. Tringides, A. Menzel and E.H. Conrad,
    Collective surface diffusion coefficients under non-equilibrium conditions, Vol. 29 of NATO Advanced (2001)
    DOI

  152. Spatial Variation of Au Coverage as the Driving Force for Nanoscopic Pattern Formation,
    Frank-J. Meyer zu Heringdorf, Th. Schmidt, S. Heun, R. Hild, P. Zahl, B. Ressel, E. Bauer and M. Horn-von Hoegen,
    Physical Review Letters 86 (2001) pp. 5088-5091
    DOI

  153. Local Au coverage as driving force for Au induced faceting of vicinal Si(001): a LEEM and XPEEM study,
    Frank-J. Meyer zu Heringdorf, R. Hild, P. Zahl, Th. Schmidt, B. Ressel, S. Heun, E. Bauer and M. Horn-von Hoegen,
    Surface Science 480 (2001) pp. 103-108
    DOI

  154. Au induced reconstructions on Si(111),
    C. Seifert, R. Hild, M. Horn-von Hoegen, R. Zachuk and B. Z. Olshanetsky,
    Surface Science 488 (2001) pp. 233-238
    DOI

  155. Ultrafast x-ray measurement of laser heating in semiconductors: Parameters determining the melting threshold",
    A. Cavalleri, C.W. Siders, C. Rose-Petruck, R. Jimenez, Cs. T?th, J. A. Squier, C. P. J. Barty, K. R. Wilson, K. Sokolowski-Tinten, M. Horn-von Hoegen and D. von der Linde,
    Physical Review B 63 (2001) p. 193306
    DOI

  156. Characterization of Ge deltadoped Si(111) with RBS-channeling,
    J. Yuhara, K. Morita, J. Falta, B.H. Müller and M. Horn-von Hoegen,
    Surface & Interface Analysis 31 (2001) pp. 754-760
    DOI

  157. Thermal activation of dislocation array formation,
    A. Janzen, I. Dumkow and M. Horn-von Hoegen,
    Applied Physics Letters 79 (2001) pp. 2387-2389
    DOI

  158. Femtosecond X-ray measurement of ultrafast melting and large acoustic transients,
    K. Sokolowski-Tinten, C. Blome, C. Dietrich, A. Tarasevitch, M. Horn-von Hoegen, D. von der Linde, A. Cavalleri, J. Squier and M. Kammler,
    Physical Review Letters 87 (2001) p. 225701
    DOI

  159. Transient lattice dynamics in fs-laser-excited semiconductors probed by ultrafast x-ray diffraction,
    K. Sokolowski-Tinten, M. Horn-von Hoegen, D. von der Linde, A. Cavalleri, C.W. Siders, F.L.H. Brown, D.M. Leitner, Cs. Toth, C.P.G. Barty, J.A. Squier, K.R. Wilson and M. Kammler,
    J. Phys. IV France 11 (2001) p. 2
    DOI


  160. 2000


  161. Direct observation of ultrafast non-thermal melting by ultrafast X-ray diffraction,
    C.W. Siders, A. Cavalleri, K. Sokolowski-Tinten, Cs. Toth, T. Guo, M. Kammler, M. Horn-von Hoegen, K.R. Wilson, D. von der Linde and C.P.J. Barty,
    Ultrafast Phenomena XII 66 (2000) p. 276
    DOI

  162. Au induced regular ordered striped domain wall structure of a (5x3) reconstruction on Si(001) studied by STM and SPA-LEED,
    R. Hild, F.-J. Meyer zu Heringdorf, P. Zahl and M. Horn-von Hoegen,
    Surface Science 454 (2000) pp. 851-855
    DOI

  163. Formation of hill and valley structures on Si(001) vicinal surfaces studied by spot-profile-analyzing LEED,
    H. Minoda, T. Shimakura, K. Yagi, F.-J. Meyer zu Heringdorf and M. Horn-von Hoegen,
    Physical Review B 61 (2000) pp. 5672-5678
    DOI

  164. Anharmonic lattice dynamics in Germanium measured with ultrafast x-ray diffraction,
    A. Cavalleri, C.W. Siders, F.L.H. Brown, D.M. Leitner, C. T?th, J.A. Squier, C.P.J. Barty, K.R. Wilson, K. Sokolowski-Tinten, M. Horn-von Hoegen, D. von der Linde and M. Kammler,
    Physical Review Letters 85 (2000) pp. 586-589
    DOI

  165. Hydrogen induced domain-wall structure on Si(113),
    F.-J. Meyer zu Heringdorf, H. Goldbach, H.L. Guenter, M. Horn-von Hoegen, V. Dorna, U. Koehler and M. Henzler,
    Surface Science 458 (2000) pp. 147-154
    DOI

  166. Time-resolved X-ray diffraction study of ultrafast acoustic phonon dynamics in Ge/Si heterostructures,
    K. Sokolowski-Tinten, A. Cavalleri, C. W. Siders, F.L.H. Brown, D. M. Leitner, Cs. Toth, M. Kammler, M. Horn-von Hoegen, D. von der Linde, J. A. Squier, C. P. J. Barty and K. R. Wilson,
    Ultrafast Phenomena XII 66 (2000) p. 281
    Link DOI


  167. 1999


  168. 3-dim. Reciprocal space mapping of a quasi periodic misfit dislocation array,
    M. Kammler, T. Schmidt, P. Zahl, P. Kury, J. Falta, and M. Horn-von Hoegen,
    HASYLAB/DESY Annual Report 0 (1999)
    Link

  169. Ultrafast movies of atomic motion with femtosecond laser-based X-rays,
    C. W. Siders, A. Cavalleri, K. Sokolowski-Tinten, T. Guo, C. Toth, R. Jimenez, C. Rose-Petruck, M. Kammler, M. Horn-von Hoegen, D. von der Linde, K. R. Wilson and C. P. J. Barty,
    SPIE Proceedings 3776 (1999) p. 302
    DOI

  170. Ag on Si surfaces: from insulator to metal,
    M. Horn-von Hoegen, M. Henzler and G. Meyer,
    Morphological Organization in Epitaxial Growth, Ed. Z. Zhang and M.G. Lagally, World Scientific (1999) pp. 403-420
    Link

  171. Surfactant-mediated epitaxy of Ge on Si: progress in growth and electrical characterization,
    M. Kammler, D. Reinking, K.R. Hofmann and M. Horn-von Hoegen,
    Thin Solid Films 336 (1999) pp. 29-33
    DOI

  172. Gold-induced faceting on a Si(001) vicinal surface: SPA-LEED and REM study,
    H. Minoda, K. Yagi, F.-J. Meyer zu Heringdorf, A. Meier, D. Kähler and M. Horn-von Hoegen,
    Physical Review B 59 (1999) pp. 2363-2375
    DOI

  173. Bi surfactant mediated epitaxy of Ge on Si(111),
    M. Horn-von Hoegen, F.-J. Meyer zu Heringdorf, M. Kammler, C. Schaeffer, D. Reinking, and K.R. Hofmann,
    Thin Solid Films 343-344 (1999) pp. 579-582
    DOI

  174. Au induced giant faceting of vicinal Si(001),
    M. Horn-von Hoegen, F.-J. Meyer zu Heringdorf, R. Hild, P. Zahl, Th. Schmidt and E. Bauer,
    Surface Science 433-435 (1999) pp. 475-480
    DOI

  175. Fabrication of high-mobility Ge p-channel MOSFETs on Si substrates,
    D. Reinking, M. Kammler, N. Hoffmann, M. Horn-von Hoegen and K.R. Hofmann,
    Electronic Letters 35 (1999) pp. 503-504
    Link

  176. Gold-induced faceting on a Si(hhm) surface (m/h=1.4-1.5) studied by SPA-LEED,
    H. Minoda, T. Shimakura, K. Yagi, F.-J. Meyer zu Heringdorf and M. Horn-von Hoegen,
    Surface Science 432 (1999) pp. 69-80
    DOI

  177. Growth of semiconductor layers studied by spot profile analysis low energy electron diffraction - Part II,
    M. Horn-von Hoegen,
    Zeitschrift für Kristallographie 214 (1999) pp. 684-721
    DOI

  178. Growth of semiconductor layers studied by spot profile analysis low energy electron diffraction - Part I,
    M. Horn-von Hoegen,
    Zeitschrift für Kristallographie 214 (1999) pp. 591-629
    DOI

  179. Interplay of surface morphology and strain relief during surfactant mediated epitaxy of Ge on Si,
    P. Zahl, P. Kury, and M. Horn-von Hoegen,
    Applied Physics A 69 (1999) pp. 481-488
    DOI

  180. Ge p-MOSFETs Compatible with Si CMOS-Technology,
    D. Reinking, M. Kammler, N. Hoffmann, M. Horn-von Hoegen and K.R. Hofmann,
    Proceedings of the 29th ESSDERC 99 (1999) pp. 300-303
    Link

  181. Detection of nonthermal melting by ultrafast X-ray diffraction ,
    C.W. Siders, A. Cavalleri, K. Sokolowski-Tinten, Cs. Toth, T. Guo, M. Kammler, M. Horn-von Hoegen, K.R. Wilson, D. von der Linde and C.P.J. Barty,
    Science 286 (1999) pp. 1340-1342
    DOI

  182. Au induced giant faceting of vicinal Si(001),
    F.-J. Meyer zu Heringdorf, R. Hild, P. Zahl, M. Horn-von Hoegen, Th. Schmidt, S. Heun, B. Ressel and E. Bauer,
    Elettra Highlights 98-99 (1999) pp. 42-44
    Link


  183. 1998


  184. Strain Field of Periodic Dislocation Networks of SME grown Ge on Si(111),
    M. Kammler, J. Falta, P. Kury, B. H. Müller, T. Schmidt, and M. Horn-von Hoegen,
    HASYLAB/DESY Annual Report 0 (1998)
    Link

  185. Step arrangement control of vicinal Si(001) by Ag adsorption,
    A. Meier, P. Zahl, R. Vockenrodt and M. Horn-von Hoegen,
    Applied Surface Science 123/124 (1998) pp. 694-698
    DOI

  186. Macroscopic one-dimensional facetting of Si(100) upon Au adsorption,
    M. Horn-von Hoegen, H. Minoda, K. Yagi, F. Meyer zu Heringdorf and D. Kähler,
    Surface Science 402-404 (1998) pp. 464-469
    DOI

  187. Surfactant-grown low-doped Germanium layers on Silicon with high electron mobilities,
    K. Hofmann, D. Reinking, M. Kammler and M. Horn-von Hoegen,
    Thin Solid Films 321 (1998) pp. 125-130
    DOI

  188. X-ray characterization of buried delta layers,
    J. Falta, D. Bahr, G. Materlik, B.H. Müller and M. Horn-von Hoegen,
    Surface Review and Letters 5 (1998) pp. 145-149
    DOI

  189. Giant faceting of vicinal Si(001) induced by Au adsorption,
    F.-J. Meyer zu Heringdorf, Th. Schmidt, E. Bauer, D. Kähler, H. Minoda, K. Yagi and M. Horn-von Hoegen,
    Surface Review and Letters 5 (1998) pp. 1167-1178
    DOI

  190. High concentration Bi delta-doping layers on Si(001),
    J. Falta, O. Mielmann, T. Schmidt, A. Hille, C. Sanchez-Hanke, P. Sonntag, G. Materlik, F. Meyer zu Heringdorf, M. Kammler, M. Horn-von Hoegen and M. Copel,
    Applied Surface Science 123/124 (1998) pp. 538-541
    DOI

  191. Surface morphology changes due to adsorbates and due to electron bombardement,
    M. Henzler, D. Thielking, M. Horn-von Hoegen and V. Zielasek,
    Physica A 261 (1998) pp. 1-12
    DOI

  192. Adsorption induced giant faceting of vicinal Si(001),
    M. Horn-von Hoegen, F.-J. Meyer zu Heringdorf, R. Hild, P. Zahl, Th. Schmidt and E. Bauer,
    Thin Solid Films 336 (1998) pp. 16-21
    Link


  193. 1997


  194. Surfactant mediated heteroepitaxy: Interplay of diffusion, strain relief, and surface morphology,
    M. Horn-von Hoegen,
    Proc. NATO-ASI Workshop on Surface Diffusion: atomistic and Collective Processes, Eds. M.C. Tringide (1997)
    DOI

  195. Ag-mediated step-bunching instability on vicinal Si(100),
    S. Fölsch, G. Meyer, D. Winau, K.H. Rieder, M. Horn-von Hoegen, T. Schmidt and M. Henzler,
    Surface Science 394 (1997) pp. 60-70
    DOI

  196. Enhanced Sb segregation in surfactant-mediated heterogrowth: High-mobility, low-doped Ge on Si,
    D. Reinking, M. Kammler, M. Horn-von Hoegen and K. Hofmann,
    Applied Physics Letters 71 (1997) pp. 924-926
    DOI

  197. High electron mobilities in surfactant-grown Germanium on Silicon substrates,
    D. Reinking, M. Kammler, M. Horn-von Hoegen and K. Hofmann,
    Jpn. J. Appl. Phys. 36 (1997) pp. 1082-1085
    DOI


  198. 1996


  199. X-ray interface characterization of Ge delta layers on Si(001),
    D. Bahr, J. Falta, G. Materlik, B.H. Müller and M. Horn-von Hoegen,
    Physica B 221 (1996) pp. 96-100
    DOI

  200. Adsorbate induced change of equilibrium surface during crystal growth: Si on Si(111)/H,
    M. Horn-von Hoegen and A. Golla,
    Physical Review Letters 76 (1996) pp. 2953-2956
    DOI

  201. Towards perfect Ge delta layers on Si(001),
    J. Falta, D. Bahr, G. Materlik, B.H. Müller and M. Horn-von Hoegen,
    Applied Physics Letters 68 (1996) pp. 1394-1396
    DOI

  202. Stress reduction and interface quality of buried Sb delta-layers on Si(001),
    J. Falta, D. Bahr, A. Hille, G. Materlik, M. Kammler and M. Horn-von Hoegen,
    Applied Physics Letters 69 (1996) pp. 2906-2908
    DOI


  203. 1995


  204. Epitaxial layer growth of Ag(111)-films on Si(100),
    M. Horn-von Hoegen, T. Schmidt, G. Meyer, D. Winau and K.H. Rieder,
    Surface Science 331-333 (1995) pp. 575-579
    DOI

  205. Surfactants in Si(111) homoepitaxy,
    M. Horn-von Hoegen, J. Falta, M. Copel and R.M. Tromp,
    Applied Physics Letters 66 (1995) pp. 487-489
    DOI

  206. Interface roughening of Ge delta layers on Si(111),
    J. Falta, T. Gog, G. Materlik, B.H. Müller and M. Horn-von Hoegen,
    Physical Review B 51 (1995) p. 7598
    DOI

  207. Lattice accomodation of Si(001) and Ag(111),
    M. Horn-von Hoegen, T. Schmidt, M. Henzler, G. Meyer, D. Winau and K.H. Rieder,
    Physical Review B 52 (1995) pp. 10764-10767
    DOI

  208. Reconstruction dependent orientation of Ag(111) films on Si(001),
    S. Fölsch, G. Meyer, D. Winau, K.H. Rieder, T. Schmidt and M. Horn-von Hoegen,
    Physical Review B 52 (1995) pp. 13745-13748
    DOI

  209. Grundschritte der Epitaxie: Sichtbarmachung mit Elektronenbeugung und Rastertunnelmikroskopie,
    M. Henzler, M. Horn-von Hoegen and U. Köhler,
    Nova Acta Leopoldina NF 73 (1995) pp. 31-51


  210. Influence of H on low temperature Si(111) homoepitaxy,
    M. Horn-von Hoegen and A. Golla,
    Surface Science 337 (1995) pp. 777-782
    DOI

  211. Ag-induced multi-step formation on Si(001),
    S. Fölsch, G. Meyer, D. Winau, K.H. Rieder, M. Horn-von Hoegen, T. Schmidt and M. Henzler,
    Applied Physics Letters 67 (1995) pp. 2185-2187
    DOI


  212. 1994


  213. Surfactant-mediated growth of Ge on Si(111),
    M. Horn-von Hoegen, M. Copel, J. Tsang, M.C. Reuter and R.M. Tromp,
    Physical Review B 50 (1994) pp. 10811-10822
    DOI

  214. Surfactant-stabilized strained Ge cones on Si(100),
    M. Horn-von Hoegen, A. Al Falou, B.H. Müller, U. Köhler, L. Andersohn, B. Dahlheimer and M. Henzler,
    Physical Review B 49 (1994) pp. 2637-2650
    DOI

  215. Formation of lattice matching interfacial dislocation network in surfactant mediated growth of Ge on Si(111) by an in situ SPA-LEED study,
    M. Horn-von Hoegen,
    Proceedings : 4th international conference on the formation of semiconductor interfaces (ICSFI-4). E (1994)


  216. Lattice matching periodic interfacial dislocation network in surfactant-mediated growth of Ge on Si(111),
    M. Horn-von Hoegen and M. Henzler,
    Phys. Stat. Solidi (a) 146 (1994) pp. 337-352
    DOI

  217. Strain relief by micro roughness in surfactant mediated growth of Ge on Si(001),
    M. Horn-von Hoegen, B. H. Müller and A. Al Falou,
    Physical Review B 50 (1994) pp. 11640-11652
    DOI

  218. Surfactants: Perfect heteroepitaxy of Ge on Si(111),
    M. Horn-von Hoegen,
    Applied Physics A 59 (1994) pp. 503-515
    DOI

  219. Homoepitaxy of Si(111) is surface defect mediated,
    M. Horn-von Hoegen and H. Pietsch,
    Surface Science 321 (1994) pp. 129-136
    DOI

  220. Ge delta-Layers on Si(111) and Si(001) grown by MBE and SPE,
    J. Falta, T. Gog, G. Materlik, B.H. Müller and M. Horn-von Hoegen,
    MRS Proceedings 375 (1994) pp. 177-180
    DOI


  221. 1993


  222. The interplay of surface morphology and strain relief in surfactant mediated growth of Ge on Si(111),
    M. Horn-von Hoegen, M. Pook, A. Al Falou, B. H. Müller and M. Henzler,
    Surface Science 284 (1993) pp. 53-66
    DOI

  223. Surface morphology and strain relief in surfactant mediated growth of Ge on Si(111),
    M. Horn-von Hoegen, M. Pook, A. Al Falou, B. H. Müller and M. Henzler,
    Scanning Microscopy 7 (1993) pp. 481-488
    DOI

  224. Surfactant induced reversible changes of surface morphology,
    M. Horn-von Hoegen, B. H. Müller, A. Al Falou and M. Henzler,
    Physical Review Letters 71 (1993) pp. 3170-3173
    DOI

  225. Formation of the interfacial dislocation network in surfactant-mediated growth of Ge on Si(111) by SPALEED, Part I,
    M. Horn-von Hoegen, A. Al Falou, H. Pietsch, B. H. Müller and M. Henzler,
    Surface Science 298 (1993) pp. 29-42
    DOI


  226. 1992


  227. Layer-by -layer growth of germanium on Si(100): Strain induced morphology and the influence of surfactants,
    U. Köhler, O. Jusko, B. Müller, M. Horn-von Hoegen and M. Pook,
    Ultramicroscopy 42-44 (1992) pp. 832-837
    DOI

  228. Growth of monoatomic layers: investigations with electron diffraction and scanning tunneling microscopy,
    M. Henzler, M. Horn-von Hoegen and U. Köhler,
    Festkörperprobleme 32 (1992) p. 333
    DOI


  229. 1991


  230. Defect self-annihilation in surfactant-mediated epitaxial growth,
    M. Horn-von Hoegen, F.K. LeGoues, M. Copel, M.C. Reuter and R.M. Tromp,
    Physical Review Letters 67 (1991) p. 1130
    DOI

  231. A new two-dimensional particle detector for a toroidal electrostatic analyzer,
    R.M. Tromp, M. Copel, M.C. Reuter, M. Horn-von Hoegen and J. Speidell,
    Rev. Sci. Instrum. 62 (1991) p. 2679
    DOI

  232. Strain-relief mechanism in surfactant-grown epitaxial germanium films on Si(111),
    F.K. LeGoues, M. Horn-von Hoegen, M.Copel and R.M. Tromp,
    Physical Review B 44 (1991) pp. 12894-12902
    DOI


  233. 1990


  234. Influence of surfactants in Ge and Si epitaxy on Si(001),
    M. Copel, M.C. Reuter, M. Horn-von Hoegen and R.M. Tromp,
    Physical Review B 42 (1990) p. 11682
    DOI


  235. 1989


  236. SPA-LEED studies of defects in thin epitaxial NiSi2 layers on Si(111),
    J. Falta, M. Horn and M. Henzler,
    Applied Surface Science 41-42 (1989) pp. 230-235
    DOI

  237. The initial stages of growth of silicon on Si(111) by spot profile analysing low-energy electron diffraction,
    M. Horn-von Hoegen, J. Falta and M. Henzler,
    Thin Solid Films 183 (1989) pp. 213-220
    DOI


  238. 1988


  239. Nucleation and growth during molecular beam epitaxy (MBE) of Si on Si(111),
    R. Altsinger, H. Busch, M. Horn and M. Henzler,
    Surface Science 200 (1988) pp. 235-246
    DOI

  240. Crystal Growth Studies with LEED,
    M. Horn and M. Henzler,
    Proceedings of the 2nd Symposium of Surface Science in Kaprun, Österreich (1988)


  241. LEED investigations of Si MBE on Si(100),
    M. Horn, U. Gotter and M. Henzler,
    Proc. NATO-Workshop on RHEED and Reflection Electron Imaging of Surfaces. Eds.: P.K.Larsen und P.J.D 188 (1988)
    DOI

  242. Low-energy electron diffraction investigations of Si molecular-beam epitaxy on Si(100),
    M. Horn, U. Gotter and M. Henzler,
    J. Vac. Sci. Technol. B 6 (1988) pp. 727-730
    DOI


  243. 1987


  244. LEED studies of Si molecular beam epitaxy on Si(111),
    M. Horn and M. Henzler,
    Journal of Crystal Growth 81 (1987) pp. 428-433
    DOI