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Fakultät Physik
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Duisburg
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MF 268
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Die folgenden Publikationen sind in der Online-Universitätsbibliographie der Universität Duisburg-Essen verzeichnet. Weitere Informationen finden Sie gegebenenfalls auch auf den persönlichen Webseiten der Person.
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Critical behavior of the dimerized Si(001) surface : Continuous order-disorder phase transition in the two-dimensional Ising universality classIn: Physical Review B Jg. 109 (2024) Nr. 13, 134104Online Volltext: dx.doi.org/ (Open Access)
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Dimer coupling energies of the Si(001) surfaceIn: Physical Review Letters Jg. 130 (2023) Nr. 12, 126203Online Volltext: dx.doi.org/ (Open Access)
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Hot carrier transport limits the displacive excitation of coherent phonons in bismuthIn: Applied Physics Letters (APL) Jg. 119 (2021) Nr. 9, 091601Online Volltext: dx.doi.org/
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Rapid onset of strain relief by massive generation of misfit dislocations in Bi(111)/Si(001) heteroepitaxyIn: Applied Physics Letters (APL) Jg. 114 (2019) Nr. 8, S. 081601-1 - 081601-5Online Volltext: dx.doi.org/
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Temperature-Controlled Rotational Epitaxy of GrapheneIn: Nano Letters Jg. 19 (2019) Nr. 7, S. 4594 - 4600Online Volltext: dx.doi.org/ Online Volltext (Open Access)
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In-situ high-resolution low energy electron diffraction study of strain relaxation in heteroepitaxy of Bi(111) on Si(001) : interplay of strain state, misfit dislocation array and lattice parameterIn: Thin Solid Films Jg. 570 (2014) Nr. Part A, S. 159 - 163Online Volltext: dx.doi.org/
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Interplay between forward and backward scattering of spin-orbit split surface states of Bi(111)In: Nano Letters Jg. 13 (2013) Nr. 6, S. 2717 - 2722Online Volltext: dx.doi.org/
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Interplay of wrinkles, strain, and lattice parameter in graphene on iridiumIn: Nano Letters Jg. 12 (2012) Nr. 2, S. 678 - 682Online Volltext: dx.doi.org/
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Manipulation of electronic transport in the Bi(111) surface stateIn: Physical Review Letters Jg. 108 (2012) Nr. 26, S. 266804Online Volltext: dx.doi.org/
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Anisotropic scattering of surface state electrons at a point defect on Bi(111)In: Applied Physics Letters (APL) Jg. 98 (2011) Nr. 2, S. 022108Online Volltext: dx.doi.org/
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Growth temperature dependent graphene alignment on Ir(111)In: Applied Physics Letters (APL) Jg. 98 (2011) Nr. 14, S. 141903Online Volltext: dx.doi.org/
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Lost in reciprocal space? : Determination of scattering condition in spot profile analysis low energy electron diffractionIn: Review of Scientific Instruments Jg. 82 (2011) Nr. 3, S. 35111Online Volltext: dx.doi.org/
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Two-dimensional electron transport and scattering in Bi(111) surface statesIn: e-Journal of Surface Science and Nanotechnology Jg. 8 (2010) S. 27 - 31Online Volltext: dx.doi.org/
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Epitaxial growth of Bi(111) on Si(001)In: e-Journal of Surface Science and Nanotechnology Jg. 7 (2009) S. 441 - 447Online Volltext: dx.doi.org/
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Nanoscale dislocation patterning in Bi(1 1 1)/Si(0 0 1) heteroepitaxyIn: Surface Science Jg. 603 (2009) Nr. 13, S. 2057 - 2061Online Volltext: dx.doi.org/
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Nucleation and initial growth in the semimetallic homoepitaxial system of Bi on Bi(111),In: Physical Review B: Condensed matter and materials physics Jg. 79 (2009) Nr. 19, S. 193306Online Volltext: dx.doi.org/
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Stable tungsten disilicide contacts for surface and thin film resistivity measurementsIn: Journal of Vacuum Science and Technology (JVST) B: Nanotechnology and Microelectronics Jg. 27 (2009) Nr. 1, S. 180Online Volltext: dx.doi.org/
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Epitaxial Bi(111) films on Si(001) : strain state, surface morphology, and defect structureIn: Thin Solid Films Jg. 516 (2008) Nr. 23, S. 8227 - 8231Online Volltext: dx.doi.org/
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Homoepitaxial growth of Bi(111)In: Physical Review B: Condensed matter and materials physics Jg. 78 (2008) Nr. 3, 35321 (9p)Online Volltext: dx.doi.org/
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Lattice-matching periodic array of misfit dislocations: Heteroepitaxy of Bi(111) on Si(001),In: Physical Review B: Condensed matter and materials physics Jg. 76 (2007) Nr. 3, S. 35337Online Volltext: dx.doi.org/
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Nanopattern Formation by Periodic Array of Interfacial Misfit Dislocations in Bi(111)/Si(001) HeteroepitaxyIn: MRS (Materials Research Society) Online Proceedings Library Archive Jg. 1059 (2007)Online Volltext: dx.doi.org/
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Lattice accommodation of epitaxial Bi(111) films on Si(001) studied with SPA-LEED and AFM,In: Physical Review B: Condensed matter and materials physics Jg. 74 (2006) Nr. 19, 195340 (5p)
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Growth, morphology, and conductivity in semimetallic, metallic films on Si(0001)Duisburg (2009) XIV, 187 S. : zahlr. Ill., graph. Darst.