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Bismarckstr. 81 (BA)
47057 Duisburg
47057 Duisburg
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BA 131
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Universitätsprofessor/in em./i.R., Werkstoffe der Elektrotechnik
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Die folgenden Publikationen sind in der Online-Universitätsbibliographie der Universität Duisburg-Essen verzeichnet. Weitere Informationen finden Sie gegebenenfalls auch auf den persönlichen Webseiten der Person.
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A new technique for contactless current contrast imaging of high frequency signalsIn: Microelectonics Reliability, Jg. Vol. 43, 2003, Nr. 9-11, S. 1633 – 1638
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Contactless current and voltage measurements in integrated circuits via a needle sensorIn: Microelectronics Reliability, Jg. Vol. 42, 2002, Nr. 9-11, S. 1695 – 1700
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Simultaneous IC-internal voltage and current measurements via a multi lever Scanning Force MicroscopeIn: Microelectronics Reliability, Jg. Vol. 42, 2002, Nr. 9-11, S. 1759 – 1762
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Cross-talk in electric force microscopy testing of parallel sub-micrometer conducting linesIn: Microelectronics Reliability, Jg. Vol. 40, 2000, Nr. 8-10, S. 1401 – 1406
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Voltage-influence of biased interconnection line on integrated circuit-internal current contrast measurements via magnetic force microscopyIn: Microelectronics Reliability, Jg. Vol. 40, 2000, Nr. 8-10, S. 1389 – 1394
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A new bifunctional topography and current probe for scanning force microscopy testing of integrated circuitsIn: Microelectronics Reliability, Jg. Vol. 39, 1999, Nr. 6-7, S. 975 – 980
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Quantitative high frequency-electric force microscope testing of monolithic microwave integrated circuits at 20 GHzIn: Microelectronics Relability, Jg. Vol. 39, 1999, Nr. 6-7, S. 951 – 956
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Voltage contrast measurements on sub-micrometer structures with an electric force microscope based test systemIn: Microelectronics Reliability, Jg. Vol. 39, 1999, Nr. 6-7, S. 969 – 974
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Characterization of a MMIC by direct and indirect electro-optic sampling and by network analyzer measurementsIn: Microelectronic Engineering, Jg. 24, 1994, Nr. 1-4, S. 377 – 384
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Experimental characterization of the perturbations of microwave devices by the electro-optic probe tipIn: Microelectronic Engineering, Jg. 24, 1994, Nr. 1-4, S. 123 – 130
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Two-dimensional field mapping in coplanar MMIC-components using direct electro-optic probingIn: Microelectronic Engineering, Jg. 24, 1994, Nr. 1-4, S. 385 – 392
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InyGa1-yAs⧸GaAs interface smoothing by GaAs monolayers in highly strained graded superlattice channels (0.2 ≤ y ≤ 0.4) for pseudomorphic AlxGa1-xAs⧸InyGa1-yAs HFETIn: Journal of Crystal Growth, Jg. 127, 1993, Nr. 1-4, S. 589 – 591
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Scanning transmission electron microscopy of heterointerfaces grown by metalorganic vapor phase epitaxy (MOVPE)In: Journal of Crystal Growth, Jg. 107, 1991, Nr. 1-4, S. 452 – 457
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Design and characterization of integrated probes for millimeter wave applications in scanning probe microscopyIn: Proceedings of the 1996 IEEE MTT-S International Microwave Symposium Digest / San Franscisco, USA; 17 - 21 June 1996. Piscataway: IEEE, 1996, S. 1529 – 1532
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Two-dimensional mapping of amplitude and phase of microwave fields inside a MMIC using the direct electro-optic sampling techniqueIn: Proceedings of the IEEE MTT-S International Microwave Symposium Digest / San Diego, USA; 23-27 May 1994. Piscataway: IEEE, Jg. 3, 1994, S. 1597 – 1600
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Two-dimensional direct electra-optic field mapping in a monolithic integrated GaAs amplifierIn: 23rd European Microwave Conference / EuMA 1993; Madrid, Spain; 6 - 10 September 1993. Piscataway: IEEE, 1993, S. 497 – 499
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Two-dimensional direct electro-optic field mapping in a monolithic integrated GaAs amplifierIn: Proceedings of the 23rd European Microwave Conference (EuMC'93) / EuMC'93, 10. September 1993, Madrid, Spain. Madrid, 1993, S. 497 – 499
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InAlAs/InGaAs Heterostrukturen auf InP zur Realisierung optisch steuerbarer Höchstfrequenzleitungen
9. Treffen des DGKK Arbeitskreises "Epitaxie von III/V-Halbleitern", Duisburg, Dezember 1994,1994 -
Electro-optical testing of MMICs
24th General Assembly, August 25-September 2, 1993, Kyoto, Japan, 1993,Kyoto, 1993 -
High Resolution STEM Analysis of InGaAs/AlGaAs Heterostructures
10th International Congress on Electron Microscopy, Granada, Spain, 07.09.1992 - 12.09.1992,Granada, Spain, 1992 -
InyGa₁₋yAs{plus 45 degree rule}GaAs interface smoothing by GaAs monolayers in highly strained graded superlattice channels (0.2 ≤ y ≤ 0.4) for pseudomorphic AlₓGa₁₋ₓAs{plus 45 degree rule}InyGa₁₋yAs HFET
7th International Conference on Molecular Beam Epitaxy (MBE), Schwäbisch Gmünd, Germany, 24.08.1992 - 28.08.1992,Schwäbisch Gmünd, Germany, 1992