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Dr. Hubert Lakner

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Die folgenden Publikationen sind in der Online-Universitätsbibliographie der Universität Duisburg-Essen verzeichnet. Weitere Informationen finden Sie gegebenenfalls auch auf den persönlichen Webseiten der Person.

    Artikel in Zeitschriften

  • Lakner, Hubert; Mendorf, C.; Bollig, Bernd; Prost, Werner; Tegude, Franz-Josef
    Determination of interface composition in III-V heterojunction devices (HBT and RTD) with atomic resolution using STEM techniques
    3rd International Workshop on Expert Evaluation & Control of Compound Semicond. Mat. & Technologies (EXMATEC), Freiburg, Germany, 12.05.1996 - 15.05.1996,
    In: Materials Science and Engineering B, Jg. 44, 1997, Nr. 1-3, S. 52 – 56
    DOI
  • Prost, Werner; Scheffer, F.; Liu, Q.; Lindner, A.; Lakner, Hubert; Gyuro, I.; Tegude, Franz-Josef
    Metalorganic vapor phase epitaxial grown heterointerfaces to GaInP with group-III and group-V exchange
    In: Journal of Crystal Growth, Jg. 146, 1995, Nr. 1-4, S. 538 – 543
    DOI
  • Scheffer, F.; Lindner, A.; Liu, Q.; Heedt, Christian H.; Reuter, Ralf; Prost, Werner; Lakner, Hubert; Tegude, Franz-Josef
    Highly strained In₀.₅Ga₀.₅P as wide-gap material on InP substrate for heterojunction field effect transistor application
    In: Journal of Crystal Growth, Jg. 145, 1994, Nr. 1-4, S. 326 – 331
    DOI
  • Kauffeldt, Th.; Lakner, Hubert; Schmidt-Ott, A.
    Measurement of the properties of ultrafine iron oxide particles by means of on-line detection of particle magnetization, TDMA and STEM-analysis
    In: J. Aerosol Sci., Vol. 25, Suppl 1, pp. S567-S568, Jg. 25, 1994, Nr. Suppl. 1, Abstracts of the 1994 European Aerosol Conference, S. 567 – 568
    DOI
  • Liu, Q.; Scheffer, F.; Lindner, A.; Lakner, Hubert; Prost, Werner; Tegude, Franz-Josef
    X-ray characterization of very thin GaₓIn₁₋ₓP (x ≈ 0.5) layers grown on InP
    Int. Workshop on Expert Evaluation & Control of Compound Semicond. Mat. & Technologies (EXMATEC), Parma, Italy, 18.05.1994 - 20.05.1994,
    In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Jg. 28, 1994, Nr. 1-3, S. 188 – 192
    DOI
  • Liu, Q.; Lakner, Hubert; Scheffer, F.; Lindner, A.; Prost, Werner
    Analysis of ordering in GaInP by means of x-ray diffraction
    In: Journal of Applied Physics, Jg. 73, 1993, Nr. 6, S. 2770 – 2774
    DOI
  • Kraus, Jörg; Meschede, Herbert; Liu, Q.; Prost, Werner; Tegude, Franz-Josef; Lakner, Hubert; Kubalek, Erich
    InyGa1-yAs⧸GaAs interface smoothing by GaAs monolayers in highly strained graded superlattice channels (0.2 ≤ y ≤ 0.4) for pseudomorphic AlxGa1-xAs⧸InyGa1-yAs HFET
    In: Journal of Crystal Growth, Jg. 127, 1993, Nr. 1-4, S. 589 – 591
    DOI
  • Lakner, Hubert; Bollig, Bernd; Kubalek, Erich; Heuken, Michael; Heime, Klaus; Scheffer, F.; Guimaraes, Francisco Eduardo Gontijo
    Scanning transmission electron microscopy of heterointerfaces grown by metalorganic vapor phase epitaxy (MOVPE)
    In: Journal of Crystal Growth, Jg. 107, 1991, Nr. 1-4, S. 452 – 457
    DOI

    • Beiträge in Sammelwerken und Tagungsbänden

  • Prost, Werner; Auer, Uwe; Velling, Peter; Janßen, Guido; Agethen, Michael; Haase, M.; Reuter, Ralf; Lakner, Hubert; Tegude, Franz-Josef
    Novel Monolithic RTD/3-Terminal Device Combinations on s.i. InP for Frequency Multiplication
    In: Proceedings of the State-of-the-Art Program of Compound Semiconductors / SOTAPOCS 1997, Montreal, Canada, 04.05.1997 - 09.05.1997, 1997, S. 229 – 241
  • Lakner, Hubert; Bollig, B.; Volmich, P.; Liu, Q.; Scheffer, F.; Lindner, A.; Prost, Werner
    High-Resolution STEM-Z-Contrast Imaging and XRD : Two New Approaches for the Characterization of GaInP/GaAs-Heterostructures
    In: Proceedings of the '8th Conference on Microscopy of Semiconductor Materials / Oxford, U.K.; 05.04.1993 - 08.04.1993, 1993, S. 497 – 502
  • Scheffer, F.; Joseph, M.; Roth, B.; Lakner, Hubert; Gyuro, I.; Heuken, M.; Heime, K.
    Optimized Layer Structures for 3D Integration of GaAs Varactor and MESFET for a wide Tuning Range VCO
    In: Proceedings of '17th European GaAs and Related III-V Compounds Application Symposium / GAAS´90; Jersey, U.K.; 24.09.1990 - 27.09.1990, 1990, S. 509 – 514

    • Vorträge

  • Lakner, Hubert; Stammen, Jörg; Liu, Q.; Prost, Werner
    Characterization of Highly Strained GaxIn1-xP/InP Interfaces (x = 0.5)
    9th Conference on Microscopy of Semiconductor Materials, Oxford, U.K., 20.03.1995 - 23.03.1995,
    Oxford, U.K., 1995
  • Heinzelmann, Robert; Hülsewede, R.; Stöhr, Andreas; Jäger, Dieter; Lakner, Hubert
    Schichtstruktur für elektrooptische Schalter
    MBE-Workshop, Templin, Germany, 1994,
    Templin, 1994
  • Lakner, Hubert; Kubalek, Erich; Kraus, J.; Tegude, Franz-Josef
    High Resolution STEM Analysis of InGaAs/AlGaAs Heterostructures
    10th International Congress on Electron Microscopy, Granada, Spain, 07.09.1992 - 12.09.1992,
    Granada, Spain, 1992
  • Kraus, Jörg; Meschede, Herbert; Liu, Q.; Prost, Werner; Tegude, Franz-Josef; Lakner, Hubert; Kubalek, Erich
    InyGa₁₋yAs{plus 45 degree rule}GaAs interface smoothing by GaAs monolayers in highly strained graded superlattice channels (0.2 ≤ y ≤ 0.4) for pseudomorphic AlₓGa₁₋ₓAs{plus 45 degree rule}InyGa₁₋yAs HFET
    7th International Conference on Molecular Beam Epitaxy (MBE), Schwäbisch Gmünd, Germany, 24.08.1992 - 28.08.1992,
    Schwäbisch Gmünd, Germany, 1992