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Die folgenden Publikationen sind in der Online-Universitätsbibliographie der Universität Duisburg-Essen verzeichnet. Weitere Informationen finden Sie gegebenenfalls auch auf den persönlichen Webseiten der Person.
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Sequential mechanism of electron transport in the resonant tunneling diode with thick barriersIn: Semiconductors Jg. 41 (2007) Nr. 2, S. 227 - 231Online Volltext: dx.doi.org/
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Characterisation of ultra-thin III/V-heterostructures by convergent-beam-electron- and high-resolution-X-ray-diffractionIn: Materials Science and Engineering B: Solid-State Materials for Advanced Technology Jg. 110 (2004) Nr. 2, S. 161 - 167Online Volltext: dx.doi.org/
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Equivalent circuit of a resonant tunnel InGaAs/InAlAs diode operating at millimetric wavesIn: Journal of Communications Technology and Electronics Jg. 49 (2004) Nr. 7, S. 833 - 838
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Growth and characterization of InAlP/InGaAs double barrier RTDs
12th International Conference on Metalorganic Vapour Phase Epitaxy (MOVPE), Lahaina, Hawaii, USA, 30.05.2004 - 04.06.2004,In: Journal of Crystal Growth Jg. 272 (2004) Nr. 1-4, S. 555 - 558Online Volltext: dx.doi.org/ -
Growth of III/V resonant tunnelling diode on Si substrate with LP-MOVPE
Eleventh International Conference on MOVPE XI; Berlin, Germany; 3 - 7 June 2002,In: Journal of Crystal Growth Jg. 248 (2003) S. 380 - 383Online Volltext: dx.doi.org/ -
Two-dimensional physical simulation of InGaAs/InP heterostructure bipolar transistors
6th International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, EXMATEC 2002; Budapest; Hungary; 26 - 29 May 2002,In: Physica Status Solidi (C): Current Topics in Solid State Physics (2003) Nr. 3, S. 922 - 927Online Volltext: dx.doi.org/ -
A comparative study of GaAs- and InP-based HBT growth by means of LP-MOVPE using conventional and non gaseous sourcesIn: Progress in Crystal Growth and Characterization of Materials Jg. 41 (2000) Nr. 1-4, S. 85 - 131Online Volltext: dx.doi.org/
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Electro-optical examination of the band structure of ordered InGaAsIn: Applied Physics Letters (APL) Jg. 76 (2000) Nr. 1, S. 88 - 90Online Volltext: dx.doi.org/
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InAlAs/InGaAs/InP heterostructures for RTD and HBT device applications grown by LP-MOVPE using non-gaseous sourcesIn: Journal of Crystal Growth Jg. 221 (2000) Nr. 1-4, S. 722 - 729Online Volltext: dx.doi.org/
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Metalorganic vapour phase epitaxy growth of InP-based heterojunction bipolar transistors with carbon doped InGaAs base using tertiarybutylarsine and tertiarybutylphosphine in N₂ ambientIn: Japanese Journal of Applied Physics Jg. 39 (2000) Nr. 11, S. 6162 - 6165Online Volltext: dx.doi.org/
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Extension of the epitaxial shadow mask MBE technique for the monolithic integration and in situ fabrication of novel device structuresIn: Journal of Crystal Growth Jg. 201-202 (1999) S. 574 - 577Online Volltext: dx.doi.org/
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Strain Relaxation During Heteroepitaxy on Twist-Bonded Thin Gallium Arsenide SubstratesIn: MRS (Materials Research Society) Proceedings Jg. 535: III-V and IV-IV Materials and Processing Challenges for Highly Integrated Microelectronics and Optoelectronics (1999) S. 45Online Volltext: dx.doi.org/
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InGaP/GaAs hole barrier asymmetry determined by (0 0 2) X-ray reflections and p-type DB-RTD hole transportIn: Journal of Crystal Growth Jg. 195 (1998) Nr. 1-4, S. 117 - 123Online Volltext: dx.doi.org/
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InGaP/GaAs shadow-mask for optoelectronic integration and MBE regrowthIn: Journal of Crystal Growth Jg. 195 (1998) Nr. 1-4, S. 490 - 494Online Volltext: dx.doi.org/
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The role of hydrogen in low-temperature MOVPE growth and carbon doping of In₀.₅₃Ga₀.₄₇As for InP-based HBT
8th International Conference on Metalorganic Vapour Phase Epitaxy (MOVPE) (IC MOVPE), Cardiff, U.K., 09.06.1996 - 13.06.1996,In: Journal of Crystal Growth Jg. 170 (1997) Nr. 1-4, S. 287 - 291Online Volltext: dx.doi.org/ -
Resonant tunneling diode immedunce dependence analysisIn: Fifth International Kharkov Symposium on Physics and Engineering of Microwaves, Millimeter, and Submillimeter Waves: Symposium Proceedings / MSMW'04; Kharkov, Ukraine; 21 - 26 June 2004 / Kostenko, A.; Nosich, A.I.; Yakovenko, V.F. (Hrsg.) Jg. 2 2004, S. 566 - 568
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A novel 1.55µm HBT-Electroabsorption modulatorIn: Proceedings of the International Topical Meeting on Microwave Photonics (MWP `01) / MWP `01, 7-9 Jan. 2002, Long Beach, CA, USA 2002, S. 21 - 24Online Volltext: dx.doi.org/
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Consistent small-signal and rf-noise parameter modelling of carbon doped InP/InGaAs HBTIn: International IEEE Microwave Symposium Digest / MTT-S 2001; Phoenix, United States; 20 - 25 May 2001 Jg. 1 2001, S. 1765 - 1768Online Volltext: dx.doi.org/
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InP-based monolithically integrated RTD/HBT MOBILE for logic circuitsIn: 13th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM 2001; Nara, Japan; 14.05.2001 - 18.05.2001 2001, S. 232 - 235Online Volltext: dx.doi.org/
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Integration of heterostructure bipolar transistor and electroabsorption waveguide modulator based on a multifunctional layer design for 1.55μmIn: 13th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM 2001; Nara, Japan; 14.05.2001 - 18.05.2001 2001, S. 440 - 443Online Volltext: dx.doi.org/
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Digital circuit design based on the resonant-tunneling-hetero-junction-bipolar-transistorIn: Proceedings of the 13th Symposium on Integrated Circuits and Systems Design / SBCCI 2000; Manaus, Brazil; 18 - 24 September 2000 2000, S. 150 - 155Online Volltext: dx.doi.org/
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High f/sub T/, high current gain InP/InGaAs : C HBT grown by LP-MOVPE with non-gaseous sourcesIn: International Conference on Indium Phosphide and Related Materials: Conference Proceedings / Williamsburg, USA; 14 -18 May 2000 2000, S. 470 - 472Online Volltext: dx.doi.org/
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InP-Based HBT with Graded InGaAlAs Base Layer Grown by LP-MOVPEIn: Proceedings of the European GaAs and other Semiconductor Application Symposium / GAAS AS 2000; Paris, France; 02.10.2000 - 03.10.2000 2000
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LP-MOVPE Growth of Carbon Doped In0.48Ga0.52P/GaAs HBT Using an All-Liquid-Source ConfigurationIn: 26th International Symposium on Compound Semiconductors / ISCS 2000; Berlin, Germany; 22.08.2000 - 26.08.2000 2000
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A monolithically integrated smart pixel based on a photoconductive switch and a n-i-p-i modulatorIn: Conference on Lasers and Electro-Optics / CLEO '99; Baltimore, USA; 23.05.1999 - 28.05.1999 1999Online Volltext: dx.doi.org/
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LP-MOVPE grown GaAs- and InP-based HBTs using all-liquid alternative sourcesIn: Proceedings of the 11th International Conference on Indium Phosphide and Related Materials / IPRM`99; Davos, Switz; 16 -20 May 1999 1999, S. 467 - 470Online Volltext: dx.doi.org/
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Novel Monolithic RTD/3-Terminal Device Combinations on s.i. InP for Frequency MultiplicationIn: Proceedings of the State-of-the-Art Program of Compound Semiconductors / SOTAPOCS 1997, Montreal, Canada, 04.05.1997 - 09.05.1997 1997, S. 229 - 241
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On the design and modelling of novel 3-D integrated RTD/HBT device frequency multiplier circuitsIn: Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications / EDMO 1996; Leeds, UK; 25 - 26 November 1996 1996, S. 176 - 181Online Volltext: dx.doi.org/
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LP-MOVPE growth for high-speed electronic devices on InP
10th European Workshop on MOVPE and Rel. Growth Techniques (EW MOVPE), Leece, Italy, 08.06.2003 - 11.06.2003,Leece, Italy (2003) -
Scaling of Small-Signal and RF-Noise Parameters with Respect to the Emitter-Area of Single HBT based on InP
14th Workshop on Semiconductor Modeling and Simulation of Electron Devices (MSED), Barcelona, Spain, 16.10.2003 - 17.10.2003,Barcelona, Spain (2003) -
RF-Simulation of InGaAs/InP Heterostructure Bipolar Transistors
13th Workshop on Physical Simulation of Semiconductor Devices (PSSD), Ilkley, West Yorkshire, U.K., 25.03.2002 - 26.03.2002,Ilkley, U.K. (2002) -
Spontaneous Group III and V Superlattice Ordering in InGaAsP
26th International Conference on the Physics of Semiconductors (ICPS), Edingburgh, U.K., 29.07.2002 - 02.08.2002,Edingburgh, U.K. (2002) -
Spontaneous Group III and V Superlattice Ordering in InGaAsP
International Conference on Signal Processing (ICSP), Beijing, China, 26.08.2002 - 30.08.2002,Beijing, China (2002) -
Carbon Doped InP/InGaAs HBT : Consistent Small_Signal and RF-Noise Modelling and Characterization
Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Cagliari, Italy, 27.05.2001 - 30.05.2001,Cagliari, Italy (2001) -
Demonstration von Heterostruktur-Bipolartransistoren und Elektroabsorptionsmodulatoren auf der Basis eines multifunktionalen Schichtdesigns
65. Physikertagung und Frühjahrstagung des Arbeitskreises Festkörperphysik der DPG, Hamburg, Germany,Hamburg (2001) -
Heterostructure bipolartransistor combining electroabsorption waveguide modulator based on a multifunctional layer design for 1.55µm
12th IEEE III-V Semiconductor Device Simulation Workshop in combination with the HBT Workshop, Duisburg, Germany, 2000,Duisburg (2000) -
Resonant-Tunnelling 3-Terminal Devices for High-Speed Logic Application
24th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Aegean Sea, Greece, 29.05.2000 - 02.06.2000,Aegean Sea, Greece (2000) -
All Liquid Source Growth of Carbon Doped In0.53Ga0.47As/InP HBT by Means of LP-MOVPE
8th Europ. Workshop on MOVPE and Rel. Growth Techniques (EW MOVPE), Prag, Czech Republic, 08.06.1999 - 11.06.1999,Prag, Czech Republic (1999) -
3D-Integration of Quantum-Effect Devices (RTD) in HBT's by Means of LP-MOVPE
7th European Workshop on MOVPE and Rel. Growth Techniques (EW MOVPE), Berlin, Germany, 08.06.1997 - 11.06.1997,Berlin, Germany (1997) -
HR XRD for the Analysis of Ultra-Thin Centro-Symmetric Strained DB-RTD Heterostructures
European Materials Research Conference (E-MRS), Strasbourg, France, 16.06.1997 - 20.06.1997,Strasbourg, France (1997)