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Die folgenden Publikationen sind in der Online-Universitätsbibliographie der Universität Duisburg-Essen verzeichnet. Weitere Informationen finden Sie gegebenenfalls auch auf den persönlichen Webseiten der Person.
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Two-dimensional physical simulation of InGaAs/InP heterostructure bipolar transistors
6th International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, EXMATEC 2002; Budapest; Hungary; 26 - 29 May 2002,In: Physica Status Solidi (C): Current Topics in Solid State Physics, 2003, Nr. 3, S. 922 – 927 -
Low-voltage MOBILE logic module based on Si/SiGe interband tunnelling diodesIn: IEEE Electron Device Letters, Jg. 22, 2001, Nr. 5, S. 215 – 217
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InAlAs/InGaAs/InP heterostructures for RTD and HBT device applications grown by LP-MOVPE using non-gaseous sourcesIn: Journal of Crystal Growth, Jg. 221, 2000, Nr. 1-4, S. 722 – 729
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Metalorganic vapour phase epitaxy growth of InP-based heterojunction bipolar transistors with carbon doped InGaAs base using tertiarybutylarsine and tertiarybutylphosphine in N₂ ambientIn: Japanese Journal of Applied Physics, Jg. 39, 2000, Nr. 11, S. 6162 – 6165
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Fast fabrication of InP-based HBT using a novel coplanar designIn: Electronics Letters, Jg. 34, 1998, Nr. 19, S. 1885 – 1886DOI (Open Access)
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InGaP/GaAs hole barrier asymmetry determined by (0 0 2) X-ray reflections and p-type DB-RTD hole transportIn: Journal of Crystal Growth, Jg. 195, 1998, Nr. 1-4, S. 117 – 123
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Investigation and modeling of impact lonization with regard to the RF and noise behavior of HFETIn: IEEE Transactions on Microwave Theory and Techniques, Jg. 45, 1997, Nr. 6, S. 977 – 983
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A novel 3-D integrated HFET/RTD frequency multiplierIn: IEEE Journal of Selected Topics in Quantum Electronics (J-STQE), Jg. 2, 1996, Nr. 3, S. 650 – 653
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A consistent and scalable PSPICE HFET-model for DC- and S-parameter-simulationIn: IEEE International Conference on Microelectronic Test Structures / ICMTS 2002; Cork, Ireland; 8 - 11 April 2002. Piscataway: IEEE, 2003, S. 67 – 70
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Consistent small-signal and rf-noise parameter modelling of carbon doped InP/InGaAs HBTIn: International IEEE Microwave Symposium Digest / MTT-S 2001; Phoenix, United States; 20 - 25 May 2001. Piscataway: IEEE, Jg. 1, 2001, S. 1765 – 1768
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Integration of heterostructure bipolar transistor and electroabsorption waveguide modulator based on a multifunctional layer design for 1.55μmIn: 13th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM 2001; Nara, Japan; 14.05.2001 - 18.05.2001. Piscataway: IEEE, 2001, S. 440 – 443
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11-stage ring oscillator with nonlinear negative feedback for high speed digital applicationsIn: International Conference on Indium Phosphide and Related Materials: Conference Proceedings / Williamsburg, USA; 14 -18 May 2000. Piscataway: IEEE, 2000, S. 577 – 580
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Digital circuit design based on the resonant-tunneling-hetero-junction-bipolar-transistorIn: Proceedings of the 13th Symposium on Integrated Circuits and Systems Design / SBCCI 2000; Manaus, Brazil; 18 - 24 September 2000. Piscataway: IEEE, 2000, S. 150 – 155
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High f/sub T/, high current gain InP/InGaAs : C HBT grown by LP-MOVPE with non-gaseous sourcesIn: International Conference on Indium Phosphide and Related Materials: Conference Proceedings / Williamsburg, USA; 14 -18 May 2000. Piscataway: IEEE, 2000, S. 470 – 472
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InP-Based HBT with Graded InGaAlAs Base Layer Grown by LP-MOVPEIn: Proceedings of the European GaAs and other Semiconductor Application Symposium / GAAS AS 2000; Paris, France; 02.10.2000 - 03.10.2000, 2000
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LP-MOVPE Growth of Carbon Doped In0.48Ga0.52P/GaAs HBT Using an All-Liquid-Source ConfigurationIn: 26th International Symposium on Compound Semiconductors / ISCS 2000; Berlin, Germany; 22.08.2000 - 26.08.2000, 2000
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LP-MOVPE grown GaAs- and InP-based HBTs using all-liquid alternative sourcesIn: Proceedings of the 11th International Conference on Indium Phosphide and Related Materials / IPRM`99; Davos, Switz; 16 -20 May 1999. Piscataway: IEEE, 1999, S. 467 – 470
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InP-based logic gates for low power monolithic optoelectronic circuitsIn: Proceedings of the IEEE International Conference on Electronics, Circuits and Systems / ICECS'98 - Surfing the Waves of Science and Technology; Lisboa, Portugal; 7 - 10 September 1998. Piscataway: IEEE, Jg. 3, 1998, S. 393 – 396
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A novel 3-D integrated RTD-HFET frequency multiplierIn: International Conference on Indium Phosphide and Related Materials 1997: Conference Proceedings / IPRM`97; Cape Cod, USA; 11-15 May 1997. Piscataway: IEEE, 1997, S. 373
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Novel Monolithic RTD/3-Terminal Device Combinations on s.i. InP for Frequency MultiplicationIn: Proceedings of the State-of-the-Art Program of Compound Semiconductors / SOTAPOCS 1997, Montreal, Canada, 04.05.1997 - 09.05.1997, 1997, S. 229 – 241
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Traveling Wave Amplifier for 20Gb/s Optoelectronic Receivers Based on InAlAs/InGaAs/InP-HFETIn: Proceedings of the Conference and Exhibition on Microwaves, Radio Communication and Electromagnetic Compatibility / MIOP 1997; Sindelfingen, Germany; 22.04.1997 - 24.04.1997, 1997, S. 264 – 268
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Investigation and modeling of impact ionization with regard to the RF- and noise behaviour of HFETIn: Proceedings of the 1996 IEEE MTT-S International Microwave Symposium Digest / San Franscisco, USA; 17 - 21 June 1996. Piscataway: IEEE, 1996, S. 512178
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On the design and modelling of novel 3-D integrated RTD/HBT device frequency multiplier circuitsIn: Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications / EDMO 1996; Leeds, UK; 25 - 26 November 1996. Piscataway: IEEE, 1996, S. 176 – 181
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On the temperature dependence of the impact ionization in HFET and the corresponding RF- and noise performanceIn: 8th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / Schwaebisch Gmuend, Germany; 21.04.1996 - 25.04.1996. Piscataway: IEEE, 1996, S. 654 – 657
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High Frequency NoiseIn: Wiley Encyclopedia of Electrical and Electronics Engineering / Webster, John G. (Hrsg.). Hoboken: Wiley & Sons, Jg. 14, 1999, S. 392 – 410
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RF- and Noise Modeling of Semiconductor Devices based on InP
ITG Fachtagung 2003,2003 -
Scaling of Small-Signal and RF-Noise Parameters with Respect to the Emitter-Area of Single HBT based on InP
14th Workshop on Semiconductor Modeling and Simulation of Electron Devices (MSED), Barcelona, Spain, 16.10.2003 - 17.10.2003,Barcelona, Spain, 2003 -
A Consistent PSPICE-Model for InP HBT
13th Workshop on Physical Simulation of Semiconductor Devices (PSSD), Ilkley, West Yorkshire, U.K., 25.03.2002 - 26.03.2002,Ilkley, U.K., 2002 -
RF-Simulation of InGaAs/InP Heterostructure Bipolar Transistors
13th Workshop on Physical Simulation of Semiconductor Devices (PSSD), Ilkley, West Yorkshire, U.K., 25.03.2002 - 26.03.2002,Ilkley, U.K., 2002 -
A Consistent and Scalable PSPICE Compound Semiconductor HFET Model for DC- and S-Parameter Simulation
9th European GaAs and other Semiconductor Application Symposium (GAAS AS), London, U.K., 24.09.2001 - 25.09.2001,London, U.K., 2001 -
A New Consistent and Scalable PSPICE Model for Enhancement and Depletion-Type HFET
11th Conference and Exhibition on Microwaves, Radio Communication and Electromagnetic Compatibility (MIOP), Stuttgart, Germany, 08.05.2001 - 10.05.2001,Stuttgart, Germany, 2001 -
Carbon Doped InP/InGaAs HBT : Consistent Small_Signal and RF-Noise Modelling and Characterization
Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Cagliari, Italy, 27.05.2001 - 30.05.2001,Cagliari, Italy, 2001 -
Demonstration von Heterostruktur-Bipolartransistoren und Elektroabsorptionsmodulatoren auf der Basis eines multifunktionalen Schichtdesigns
65. Physikertagung und Frühjahrstagung des Arbeitskreises Festkörperphysik der DPG, Hamburg, Germany,Hamburg, 2001 -
Heterostructure bipolartransistor combining electroabsorption waveguide modulator based on a multifunctional layer design for 1.55µm
12th IEEE III-V Semiconductor Device Simulation Workshop in combination with the HBT Workshop, Duisburg, Germany, 2000,Duisburg, 2000 -
All Liquid Source Growth of Carbon Doped In0.53Ga0.47As/InP HBT by Means of LP-MOVPE
8th Europ. Workshop on MOVPE and Rel. Growth Techniques (EW MOVPE), Prag, Czech Republic, 08.06.1999 - 11.06.1999,Prag, Czech Republic, 1999 -
3D-Integration of Quantum-Effect Devices (RTD) in HBT's by Means of LP-MOVPE
7th European Workshop on MOVPE and Rel. Growth Techniques (EW MOVPE), Berlin, Germany, 08.06.1997 - 11.06.1997,Berlin, Germany, 1997 -
A New Optimization Strategy Based on the Theory of Evolution for the RF-Modeling of HFET
International Workshop on Exp. Based FET Device Modell. & Rel. Nonlin. Circuit Design; Kassel, Germany; 17.07.1997 - 18.07.1997,Kassel, Germany, 1997 -
A New RF- and Noise Model with Special Emphasis on Impact Ionization for HFET
Conference and Exhibition on Microwaves, Radio Communication and Electromagnetic Compatibility; MIOP 1997; Sindelfingen, Germany; 22.04.1997 - 24.04.1997,Sindelfingen, Germany, 1997 -
Theory of Evolution : New Optimization Strategies for the Modeling of HFET-RF-Noise-Parameters
Conference and Exhibition on Microwaves, Radio Communication and Electromagnetic Compatibility; MIOP 1997; Sindelfingen, Germany; 22.04.1997 - 24.04.1997,Sindelfingen, Germany, 1997 -
Fabrication and High Frequency Analysis of InAlAs/InGaAs/InP Dual-Gate-HFETs with Special Emphasis to Impact Ionization
European Heterostructure Technology Workshop (HETECH); Lille, France; 15.09.1996 - 17.09.1996,Lille, France, 1996 -
Merged Heterostructure FET/RTD Combination for (Sub-)Millimeter-Wave Generation
4th International Workshop on Terahertz Electronics; Erlangen, Germany; 05.09.1996 - 06.09.1996,Erlangen, Germany, 1996