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Bismarckstr. 81 (BA)
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47057 Duisburg
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Wissenschaftliche/r Mitarbeiter/in, Werkstoffe der Elektrotechnik
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WiSe 2025
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Die folgenden Publikationen sind in der Online-Universitätsbibliographie der Universität Duisburg-Essen verzeichnet. Weitere Informationen finden Sie gegebenenfalls auch auf den persönlichen Webseiten der Person.
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Band structure alignment in transfer-free MOCVD grown 2D-TMDC heterostructures revealed by ambient KPFMIn: APL Materials, Jg. 13, 2025, Nr. 4, 041112DOI, Online Volltext (Open Access)
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Effect of growth temperature on the microstructure and properties of epitaxial MoS₂ monolayers grown by metalorganic chemical vapor depositionIn: Journal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films, Jg. 42, 2024, Nr. 2, 022201
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Self-Powered Photodetectors Based on Scalable MOCVD-Grown WS₂-MoS₂ HeterostructuresIn: ACS Photonics, Jg. 11, 2024, Nr. 16, S. 2228 – 2235
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Impact of synthesis temperature and precursor ratio on the crystal quality of MOCVD WSe₂ monolayersIn: Nanotechnology, Jg. 34, 2023, Nr. 20, 205602
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Silver nanowire electrodes for transparent light emitting devices based on WS₂ monolayersIn: Nanotechnology, Jg. 34, 2023, Nr. 28, 285201DOI (Open Access)
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Role of Surface Adsorbates on the Photoresponse of (MO)CVD-Grown Graphene–MoS2 Heterostructure PhotodetectorsIn: ACS Applied Materials & Interfaces, Jg. 14, 2022, Nr. 30, S. 35184 – 35193
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Transfer-free, scalable photodetectors based on MOCVD-grown 2D-heterostructuresIn: 2D Materials, Jg. 8, 2021, Nr. 4, 045015DOI (Open Access)
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Flexible Large-Area Light-Emitting Devices Based on WS₂ MonolayersIn: Advanced Optical Materials, Jg. 8, 2020, Nr. 20, 2000694DOI (Open Access)
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MOVPE of Large-Scale MoS₂/WS₂, WS₂/MoS₂, WS₂/Graphene and MoS₂/Graphene 2D-2D Heterostructures for Optoelectronic ApplicationsIn: MRS Advances / Materials Research Society (Hrsg.), Jg. 5, 2020, Nr. 31-32, S. 1625 – 1633
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H2S-free Metal-Organic Vapor Phase Epitaxy of Coalesced 2D WS2 Layers on SapphireIn: MRS Advances / Materials Research Society (Hrsg.), Jg. 4, 2019, Nr. 10, S. 593 – 599
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Scalable Large-Area p-i-n Light-Emitting Diodes Based on WS₂ Monolayers Grown via MOCVDIn: ACS Photonics, Jg. 6, 2019, Nr. 8, S. 1832 – 1839
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WS₂ monolayer-based light-emitting devices in a vertical p-n architectureIn: Nanoscale, Jg. 11, 2019, Nr. 17, S. 8372 – 8379
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Improved luminescence properties of MoS₂ monolayers grown via MOCVD: Role of pre-treatment and growth parametersIn: Nanotechnology, Jg. 29, 2018, Nr. 29, S. 295704
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Metalorganic Vapor-Phase Epitaxy Growth Parameters for Two-Dimensional MoS₂In: Journal of Electronic Materials (JEM), Jg. 47, 2018, Nr. 2, S. 910 – 916DOI (Open Access)
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Carrier transfer across a 2D-3D semiconductor heterointerface : the role of momentum mismatchIn: Physical Review B, Jg. 95, 2017, Nr. 8, S. 081304
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Large-area MoS 2 deposition via MOVPEIn: Journal of Crystal Growth, Jg. 464, 2017, S. 100 – 104
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Gate control of carrier distribution in k-space in MoS2 monolayer and bilayer crystalsIn: Physical Review B: Condensed matter and materials physics, Jg. 91, 2015, Nr. 12, S. 125305
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Electrically driven single photon emission from a CdSe/ZnSSe single quantum dot at 200 KIn: Applied Physics Letters (APL), Jg. 105, 2014, Nr. 9, S. 091102
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Electrically driven single photon emission from a CdSe/ZnSSe/MgS semiconductor quantum dotIn: Physica Status Solidi (C): Current Topics in Solid State Physics, Jg. 11, 2014, Nr. 7-8: Special Issue: 16th International Conference on II–VI Compounds and Related Materials (II–VI 2013) • E-MRS 2013 Spring Meeting – Symposium C, S. 1256 – 1259
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High-frequency electrical charge and spin control in a single InGaAs quantum dotIn: Physical Review B: Condensed matter and materials physics, Jg. 85, 2012, Nr. 3, S. 035325
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P-Si/n-ZnO nanocrystal heterojunction light emitting deviceIn: Applied Physics Express, Jg. 5, 2012, Nr. 3, S. 035001
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Room temperature single photon emission from an epitaxially grown quantum dotIn: Applied Physics Letters (APL), Jg. 100, 2012, Nr. 6, S. 061114
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Local definition of spin polarization in a semiconductor by micro-scale current loopsIn: Journal of Superconductivity and Novel Magnetism, Jg. 23, 2010, Nr. 1, S. 111 – 114
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Radiative recombination dynamics of CdSe/Zn(S,Se)/MgS quantum dots up to room temperatureIn: Physica Status Solidi (B): Basic Solid State Physics, Jg. 247, 2010, Nr. 6, S. 1413 – 1415
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Radiative recombination in photoexcited quantum dots up to room temperature: The role of fine-structure effectsIn: Physical Review B: Condensed matter and materials physics, Jg. 81, 2010, Nr. 24, S. 241306
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Temperature dependence of radiative recombination in CdSe quantum dots with enhanced confinementIn: JETP Letters, Jg. 92, 2010, Nr. 1, S. 57 – 62
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Ultrafast electrical charging and discharging of a single InGaAs quantum dotIn: Applied Physics Letters (APL), Jg. 97, 2010, S. 173108
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All-inorganic light emitting device based on ZnO nanoparticlesIn: Applied Physics Letters (APL), Jg. 94, 2009, Nr. 9, S. 091115
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Electrical injection and optical readout of spin states in a single quantum dotIn: International Journal of Modern Physics B (IJMPB): Condensed Matter Physics etc., Jg. 23, 2009, Nr. 12-13, S. 2826
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Charging of a InAs/GaAs single quantum dot from a n-ZnMnSe spin alignerIn: Physica E: Low-dimensional Systems and Nanostructures, Jg. 40, 2008, Nr. 6, S. 2134 – 2137
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Electrical charging of a single quantum dot by a spin polarized electronIn: Applied Physics Letters (APL), Jg. 93, 2008, S. 073107
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Electrically driven ZnO nanoparticle light emitting deviceIn: Electronics Letters, Jg. 44, 2008, Nr. 25, S. 1485 – 1487
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Electrically driven single quantum dot emitter operating at room temperatureIn: Applied Physics Letters (APL), Jg. 93, 2008, Nr. 17, S. 173506
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Local control of spin polarization in a semiconductor by microscale current loopsIn: Applied Physics Letters (APL), Jg. 93, 2008, S. 141902
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Room temperature emission from CdSe single quantum dots embedded in high bandgap barrier materialIn: Physica E: Low-dimensional Systems and Nanostructures, Jg. 40, 2008, Nr. 6, S. 1938 – 1940
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WS₂ monolayer based light emitting devices fabricated by scalable deposition techniquesIn: Light-Emitting Devices, Materials, and Applications XXIV / Light-Emitting Devices, Materials, and Applications XXIV, 3 - 6 February 2020, San Francisco, United States / Kim, Jong Kyu; Krames, Michael R.; Strassburg, Martin (Hrsg.). Bellingham: SPIE, 2020, 113020P
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Quantum Dot Spintronics : Fundamentals and ApplicationsIn: Magnetic Nanostructures: Spin Dynamics and Spin Transport / Zabel, Hartmut; Farle, Michael (Hrsg.). Berlin: Springer, 2013, S. 235 – 268
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Light-Emitting Devices Based on Direct Band Gap Semiconductor NanoparticlesIn: Inorganic Nanoparticles: Synthesis, Applications, and Perspectives / Altavilla, Claudia; Ciliberto, Enrico (Hrsg.). Boca Raton: CRC Press, 2011, S. 109 – 132
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Light-Emitting devices based on direct band gap semiconductor nanoparticlesIn: Inorganic nanoparticles: synthesis, applications, and perspectives / Altavilla, Claudia; Ciliberto, Enrico (Hrsg.). Boca Raton, Fla. [u.a.]: CRC Press, 2011, S. 109 – 132
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All-inorganic light emitting devices based on semiconducting nanoparticlesIn: Photovoltaics and optoelectronics from nanoparticles / Symposium T, "Photovoltaics and Optoelectronics from Nanoparticles", April 5 - 9, 2010, San Francisco, CA, USA / Winterer, Markus; Gladfelter, Wayne L.; Gamelin, Daniel R.; Oda, Shunri (Hrsg.). Warrendale: MRS, 2010, S. 55 – 61
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Electrically driven single quantum dot emitter operating at room temperatureIn: Advances in Solid State Physics / Haug, Rolf (Hrsg.). Berlin [u.a.]: Springer Berlin Heidelberg, 2009, S. 67 – 78