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Fakultät für Physik, Experimentalphysik
Anschrift
Mülheimer Str.
47048 Duisburg
47048 Duisburg
Raum
MC 364
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Wissenschaftliche/r Mitarbeiter/in, Arbeitsgruppe Prof. Schleberger
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WiSe 2020
Die folgenden Publikationen sind in der Online-Universitätsbibliographie der Universität Duisburg-Essen verzeichnet. Weitere Informationen finden Sie gegebenenfalls auch auf den persönlichen Webseiten der Person.
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Influence of Highly Charged Ion Irradiation on the Electrical and Memory Properties of Black Phosphorus Field-Effect TransistorsIn: Advanced Electronic Materials, Jg. 11, 2025, Nr. 2, 2400318DOI, Online Volltext (Open Access)
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Irradiation with highly charged ions : impact of the kinetic and potential energy on particle emission
The 15th International Symposium on Electron Beam Ion Sources and Traps, 27–30 August 2024, Kielce, Poland,In: Journal of Instrumentation, Jg. 20, 2025, Nr. 4, C04027DOI (Open Access) -
Manipulation of the electrical and memory properties of MoS₂ field-effect transistors by highly charged ion irradiationIn: Nanoscale Advances, Jg. 5, 2023, Nr. 24, S. 6958 – 6966DOI, Online Volltext (Open Access)
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Velocity distributions of particles sputtered from supported two-dimensional MoS2 during highly charged ion irradiationIn: Physical Review B, Jg. 107, 2023, Nr. 7, 075418DOI (Open Access)
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Time-of-flight mass spectrometry of particle emission during irradiation with slow, highly charged ionsIn: Review of Scientific Instruments, Jg. 92, 2021, Nr. 2, S. 023909DOI, Online Volltext (Open Access)
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A swift technique to hydrophobize graphene and increase its mechanical stability and charge carrier densityIn: npj 2D Materials and Applications, Jg. 4, 2020, Nr. 1, 11DOI (Open Access)
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Ionization probability of sputtered indium atoms under impact of slow highly charged ionsIn: Journal of Vacuum Science and Technology (JVST) B: Nanotechnology and Microelectronics, Jg. 38, 2020, Nr. 4, S. 044003
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Particle emission from two-dimensional MoS₂ induced by highly charged ion impact
31st International Conference on Photonic, Electronic and Atomic Collisions, ICPEAC 2019; Deauville, France; 23 - 30 July 2019,In: Journal of Physics: Conference Series (JPCONF), Jg. 1412, 2020, Nr. 20, S. 202007DOI (Open Access) -
Manipulation of the electrical and memory device properties of monolayer MoS₂ field-effect transistors by highly charged ion irradiationIn: Proceedings of the 2023 IEEE Nanotechnology Materials and Devices Conference (NMDC 2023) / IEEE Nanotechnology Materials and Devices Conference (NMDC 2023): 22-25 October 2023; Paestum, Italy / Institute of Electrical and Electronics Engineers Inc. (Hrsg.). Piscataway: Institute of Electrical and Electronics Engineers (IEEE), 2023, S. 450 – 451
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Modifikation von substratgestützten Übergangsmetalldichalkogenid-Einzellagen durch Interaktion mit hochgeladenen IonenDuisburg, Essen, 2024DOI, Online Volltext (Open Access)