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Fakultät für Physik, Experimentalphysik
Anschrift
Lotharstraße 1
47057 Duisburg
47057 Duisburg
Raum
MF 335
Telefon
E-Mail
Funktionen
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Wissenschaftliche/r Mitarbeiter/in, Arbeitsgruppe Prof. Schleberger
Aktuelle Veranstaltungen
Keine aktuellen Veranstaltungen.
Vergangene Veranstaltungen (max. 10)
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WiSe 2024
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WiSe 2023
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SoSe 2023
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WiSe 2022
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WiSe 2021
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SoSe 2021
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WiSe 2020
Die folgenden Publikationen sind in der Online-Universitätsbibliographie der Universität Duisburg-Essen verzeichnet. Weitere Informationen finden Sie gegebenenfalls auch auf den persönlichen Webseiten der Person.
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BP/MoS₂ Van Der Waals Heterojunctions for Self‐Powered PhotoconductionIn: Advanced Optical Materials, Jg. 13, 2025, Nr. 22, 2500811DOI (Open Access)
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Influence of Highly Charged Ion Irradiation on the Electrical and Memory Properties of Black Phosphorus Field-Effect TransistorsIn: Advanced Electronic Materials, Jg. 11, 2025, Nr. 2, 2400318DOI, Online Volltext (Open Access)
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Pressure-dependent current transport in vertical BP/MoS₂ heterostructuresIn: Heliyon, Jg. 11, 2025, Nr. 3, e42443DOI (Open Access)
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Dominant n-type conduction and fast photoresponse in BP/MoS₂ heterostructuresIn: Surfaces and Interfaces, Jg. 49, 2024, 104445DOI (Open Access)
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Growth of p-doped 2D-MoS2 on Al2O3 from spatial atomic layer depositionIn: Journal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films, Jg. 42, 2024, Nr. 2, 022202DOI (Open Access)
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Isolating the optical response of a MoS2 monolayer under extreme screening of a metal substrateIn: Physical Review B, Jg. 109, 2024, Nr. 16, L161402DOI, Online Volltext (Open Access)
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Memory effect and coexistence of negative and positive photoconductivity in black phosphorus field effect transistor for neuromorphic vision sensorsIn: Materials Horizons, Jg. 11, 2024, Nr. 10, S. 2397 – 2405DOI (Open Access)
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Unraveling the influence of defects in Janus MoSSe and Janus alloys MoS₂₍₁−ₓ₎Se₂ₓIn: npj 2D Materials and Applications, Jg. 8, 2024, Nr. 1, 67DOI, Online Volltext (Open Access)
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Black Phosphorus Nanosheets in Field Effect Transistors with Ni and NiCr ContactsIn: Physica Status Solidi (B): Basic Solid State Physics, Jg. 260, 2023, Nr. 9, 2200537DOI (Open Access)
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Black phosphorus unipolar transistor, memory, and photodetectorIn: Journal of Materials Science, Jg. 58, 2023, Nr. 6, S. 2689 – 2699DOI (Open Access)
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Enhanced intensity of Raman signals from hexagonal boron nitride filmsIn: Applied Physics Letters (APL), Jg. 123, 2023, Nr. 7, 073101DOI (Open Access)
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Evaluating strain and doping of Janus MoSSe from phonon mode shifts supported by ab-initio DFT calculationsIn: Nanoscale, Jg. 15, 2023, Nr. 25, S. 10834 – 10841DOI (Open Access)
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Interaction between a gold substrate and monolayer MoS2 : An azimuthal-dependent sum frequency generation studyIn: Physical Review B, Jg. 107, 2023, Nr. 15, 155433
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Manipulation of the electrical and memory properties of MoS₂ field-effect transistors by highly charged ion irradiationIn: Nanoscale Advances, Jg. 5, 2023, Nr. 24, S. 6958 – 6966DOI, Online Volltext (Open Access)
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Optoelectronic memory in 2D MoS2 field effect transistorIn: Journal of Physics and Chemistry of Solids, Jg. 179, 2023, 111406DOI (Open Access)
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Temperature dependent black phosphorus transistor and memoryIn: Nano Express, Jg. 4, 2023, Nr. 1, 014001DOI (Open Access)
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Temperature-dependent photoconductivity in two-dimensional MoS2 transistorsIn: Materials Today Nano, Jg. 24, 2023, 100382DOI (Open Access)
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Characterization of the electric transport properties of black phosphorous back-gated field-effect transistorsIn: Journal of Physics: Conference Series (JPCONF), Jg. 2353, 2022, Nr. 1, 012005DOI (Open Access)
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Memory effects in black phosphorus field effect transistorsIn: 2D Materials, Jg. 9, 2022, Nr. 1, 015028DOI (Open Access)
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Structural Insights into Hysteretic Spin-Crossover in a Set of Iron(II)-2,6-bis(1H-Pyrazol-1-yl)Pyridine) ComplexesIn: Chemistry - A European Journal, Jg. 28, 2022, Nr. 6, e202103853DOI (Open Access)
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Gate-Controlled Field Emission Current from MoS₂ NanosheetsIn: Advanced Electronic Materials, Jg. 7, 2021, Nr. 2, 2000838DOI, Online Volltext (Open Access)
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Large-Area, Two-Dimensional MoS2 Exfoliated on Gold : Direct Experimental Access to the Metal–Semiconductor InterfaceIn: ACS Omega, Jg. 6, 2021, Nr. 24, S. 15929 – 15939DOI, Online Volltext (Open Access)
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Time-of-flight mass spectrometry of particle emission during irradiation with slow, highly charged ionsIn: Review of Scientific Instruments, Jg. 92, 2021, Nr. 2, S. 023909DOI, Online Volltext (Open Access)
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Towards field-effect controlled graphene-enhanced Raman spectroscopy of cobalt octaethylporphyrin moleculesIn: Nanotechnology, Jg. 32, 2021, Nr. 20, S. 205702DOI (Open Access)
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Electron Irradiation of Metal Contacts in Monolayer MoS₂ Field-Effect TransistorsIn: ACS Applied Materials & Interfaces, Jg. 12, 2020, Nr. 36, S. 40532 – 40540DOI, Online Volltext (Open Access)
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Gated BP/MoS₂ Heterostructure with Temperature Enhanced PhotocurrentIn: Proceedings of the 24th IEEE International Conference on Nanotechnology (NANO 2024) / 24th IEEE International Conference on Nanotechnology (NANO 2024): 08-11 July 2024; Gijon, Spain. Piscataway: IEEE Computer Society, 2024, S. 108 – 111
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Effect of PMMA capping layer on black phosphorus field effect transistorIn: Proceedings of the 2023 IEEE Nanotechnology Materials and Devices Conference (NMDC 2023) / IEEE Nanotechnology Materials and Devices Conference (NMDC 2023): 22-25 October 2023; Paestum, Italy / Institute of Electrical and Electronics Engineers Inc. (Hrsg.). Piscataway: Institute of Electrical and Electronics Engineers (IEEE), 2023, S. 77 – 80
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Manipulation of the electrical and memory device properties of monolayer MoS₂ field-effect transistors by highly charged ion irradiationIn: Proceedings of the 2023 IEEE Nanotechnology Materials and Devices Conference (NMDC 2023) / IEEE Nanotechnology Materials and Devices Conference (NMDC 2023): 22-25 October 2023; Paestum, Italy / Institute of Electrical and Electronics Engineers Inc. (Hrsg.). Piscataway: Institute of Electrical and Electronics Engineers (IEEE), 2023, S. 450 – 451
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Manipulation der opto-elektronischen Eigenschaften von 2D-Material-basierten Feldeffekttransistoren durch IonenbestrahlungDuisburg, Essen, 2025DOI, Online Volltext (Open Access)