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Fakultät für Physik, Experimentalphysik
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Lotharstraße 1
47057 Duisburg
47057 Duisburg
Raum
MF 335
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Wissenschaftliche/r Mitarbeiter/in, Arbeitsgruppe Prof. Schleberger
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2024 WS
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2023 WS
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2023 SS
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2022 WS
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2021 WS
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2021 SS
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2020 WS
Die folgenden Publikationen sind in der Online-Universitätsbibliographie der Universität Duisburg-Essen verzeichnet. Weitere Informationen finden Sie gegebenenfalls auch auf den persönlichen Webseiten der Person.
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Influence of Highly Charged Ion Irradiation on the Electrical and Memory Properties of Black Phosphorus Field-Effect TransistorsIn: Advanced Electronic Materials Jg. 11 (2025) Nr. 2, 2400318Online Volltext: dx.doi.org/ (Open Access)
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Dominant n-type conduction and fast photoresponse in BP/MoS₂ heterostructuresIn: Surfaces and Interfaces Jg. 49 (2024) 104445Online Volltext: dx.doi.org/ (Open Access)
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Growth of p-doped 2D-MoS2 on Al2O3 from spatial atomic layer depositionIn: Journal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films Jg. 42 (2024) Nr. 2, 022202Online Volltext: dx.doi.org/ (Open Access)
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Isolating the optical response of a MoS2 monolayer under extreme screening of a metal substrateIn: Physical Review B Jg. 109 (2024) Nr. 16, L161402Online Volltext: dx.doi.org/ (Open Access)
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Memory effect and coexistence of negative and positive photoconductivity in black phosphorus field effect transistor for neuromorphic vision sensorsIn: Materials Horizons Jg. 11 (2024) Nr. 10, S. 2397 - 2405Online Volltext: dx.doi.org/ (Open Access)
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Unraveling the influence of defects in Janus MoSSe and Janus alloys MoS₂₍₁−ₓ₎Se₂ₓIn: npj 2D Materials and Applications Jg. 8 (2024) Nr. 1, 67Online Volltext: dx.doi.org/ (Open Access)
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Black Phosphorus Nanosheets in Field Effect Transistors with Ni and NiCr ContactsIn: Physica Status Solidi (B): Basic Solid State Physics Jg. 260 (2023) Nr. 9, 2200537Online Volltext: dx.doi.org/ (Open Access)
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Black phosphorus unipolar transistor, memory, and photodetectorIn: Journal of Materials Science Jg. 58 (2023) Nr. 6, S. 2689 - 2699Online Volltext: dx.doi.org/ (Open Access)
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Enhanced intensity of Raman signals from hexagonal boron nitride filmsIn: Applied Physics Letters (APL) Jg. 123 (2023) Nr. 7, 073101Online Volltext: dx.doi.org/ (Open Access)
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Evaluating strain and doping of Janus MoSSe from phonon mode shifts supported by ab-initio DFT calculationsIn: Nanoscale Jg. 15 (2023) Nr. 25, S. 10834 - 10841Online Volltext: dx.doi.org/ (Open Access)
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Interaction between a gold substrate and monolayer MoS2 : An azimuthal-dependent sum frequency generation studyIn: Physical Review B Jg. 107 (2023) Nr. 15, 155433Online Volltext: dx.doi.org/
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Manipulation of the electrical and memory properties of MoS₂ field-effect transistors by highly charged ion irradiationIn: Nanoscale Advances Jg. 5 (2023) Nr. 24, S. 6958 - 6966Online Volltext: dx.doi.org/ Online Volltext (Open Access)
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Optoelectronic memory in 2D MoS2 field effect transistorIn: Journal of Physics and Chemistry of Solids Jg. 179 (2023) 111406Online Volltext: dx.doi.org/ (Open Access)
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Temperature dependent black phosphorus transistor and memoryIn: Nano Express Jg. 4 (2023) Nr. 1, 014001Online Volltext: dx.doi.org/ (Open Access)
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Temperature-dependent photoconductivity in two-dimensional MoS2 transistorsIn: Materials Today Nano Jg. 24 (2023) 100382Online Volltext: dx.doi.org/ (Open Access)
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Characterization of the electric transport properties of black phosphorous back-gated field-effect transistorsIn: Journal of Physics: Conference Series (JPCONF) Jg. 2353 (2022) Nr. 1, 012005Online Volltext: dx.doi.org/ (Open Access)
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Memory effects in black phosphorus field effect transistorsIn: 2D Materials Jg. 9 (2022) Nr. 1, 015028Online Volltext: dx.doi.org/ (Open Access)
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Structural Insights into Hysteretic Spin-Crossover in a Set of Iron(II)-2,6-bis(1H-Pyrazol-1-yl)Pyridine) ComplexesIn: Chemistry - A European Journal Jg. 28 (2022) Nr. 6, e202103853Online Volltext: dx.doi.org/ (Open Access)
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Gate-Controlled Field Emission Current from MoS₂ NanosheetsIn: Advanced Electronic Materials Jg. 7 (2021) Nr. 2, 2000838Online Volltext: dx.doi.org/ (Open Access)
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Large-Area, Two-Dimensional MoS2 Exfoliated on Gold : Direct Experimental Access to the Metal–Semiconductor InterfaceIn: ACS Omega Jg. 6 (2021) Nr. 24, S. 15929 - 15939Online Volltext: dx.doi.org/ Online Volltext (Open Access)
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Time-of-flight mass spectrometry of particle emission during irradiation with slow, highly charged ionsIn: Review of Scientific Instruments Jg. 92 (2021) Nr. 2, S. 023909Online Volltext: dx.doi.org/ Online Volltext (Open Access)
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Towards field-effect controlled graphene-enhanced Raman spectroscopy of cobalt octaethylporphyrin moleculesIn: Nanotechnology Jg. 32 (2021) Nr. 20, S. 205702Online Volltext: dx.doi.org/ (Open Access)
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Electron Irradiation of Metal Contacts in Monolayer MoS₂ Field-Effect TransistorsIn: ACS Applied Materials & Interfaces Jg. 12 (2020) Nr. 36, S. 40532 - 40540Online Volltext: dx.doi.org/ (Open Access)
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Gated BP/MoS₂ Heterostructure with Temperature Enhanced PhotocurrentIn: Proceedings of the 24th IEEE International Conference on Nanotechnology (NANO 2024) / 24th IEEE International Conference on Nanotechnology (NANO 2024): 08-11 July 2024; Gijon, Spain 2024, S. 108 - 111Online Volltext: dx.doi.org/
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Effect of PMMA capping layer on black phosphorus field effect transistorIn: Proceedings of the 2023 IEEE Nanotechnology Materials and Devices Conference (NMDC 2023) / IEEE Nanotechnology Materials and Devices Conference (NMDC 2023): 22-25 October 2023; Paestum, Italy / Institute of Electrical and Electronics Engineers Inc. (Hrsg.) 2023, S. 77 - 80Online Volltext: dx.doi.org/
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Manipulation of the electrical and memory device properties of monolayer MoS₂ field-effect transistors by highly charged ion irradiationIn: Proceedings of the 2023 IEEE Nanotechnology Materials and Devices Conference (NMDC 2023) / IEEE Nanotechnology Materials and Devices Conference (NMDC 2023): 22-25 October 2023; Paestum, Italy / Institute of Electrical and Electronics Engineers Inc. (Hrsg.) 2023, S. 450 - 451Online Volltext: dx.doi.org/
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Manipulation der opto-elektronischen Eigenschaften von 2D-Material-basierten Feldeffekttransistoren durch IonenbestrahlungDuisburg, Essen (2025) vii, 225 SeitenOnline Volltext: dx.doi.org/ Online Volltext (Open Access)