Nanoscale heat transport in self-organized Ge clusters on Si(001), T. Frigge, A. Hanisch-Blicharski, M. Kammler, A. Kalus and M. Horn-von Hoegen,
MRS Proceedings (submitted) (2012)
Ultra-fast electron diffraction at surfaces: From nanoscale heat transport to driven phase transitions, A. Hanisch-Blicharski, A. Janzen, B. Krenzer, S. Wall, F. Klasing, A. Kalus, T. Frigge, M. Kammler and M. Horn-von Hoegen,
Ultramicroscopy (accepted) (2012)
Interplay of wrinkles, strain, and lattice parameter in Graphene layers on Iridium, H. Hattab, A.T. N'Diaye, D. Wall, C. Klein, G. Jnawali, J. Coraux, C. Busse, R. van Gastel, B. Poelsema, T. Michely, F.-J. Meyer zu Heringdorf, M. Horn-von Hoegen ,
Nanoletters 12 (2012) pp. 678-682 DOI
Nanoscale Heat Transport through Epitaxial Ultrathin Hetero Films: Bi(111)/Si(001) and Bi(111)/Si(111) , A. Hanisch-Blicharski, S. Wall, A. Kalus, T. Frigge and M. Horn-von Hoegen,
MRS Proceedings MRSF11-1404-W02-08 (2011) DOI
Epitaxial Ag Nanowires with a Single Grain Boundary for Electromigration, S. Sindermann, C. Witt, D. Spoddig, M. Horn-von Hoegen, G. Dumpich, and F.-J. Meyer zu Heringdorf,
Rev. Sci. Instr. 82 (2011) p. 123907 DOI
Dynamics of Reconstructed Zones Formed Around Islands on Si During Desorption: Diffusion Made Visible, F. Meyer zu Heringdorf, D. Wall, K.R. Roos, I. Lohmar, J. Krug and M. Horn-von Hoegen,
Proceedings of the ALC 11 Conference 0 (2011) p. 372
Shape, orientation, and crystalline composition of silver islands on Si(111), D. Wall, S. Tikhonov, S. Sindermann, D. Spoddig, C. Hassel, M. Horn-von Hoegen, and F. Meyer zu Heringdorf,
IBM Journal of Research and Development 55(4) (2011) pp. 9:1-9:6 DOI
Impact of C60 adsorption on surface plasmon polaritons on self-assembled Ag(111) islands on Si(111), P. Kirschbaum, N. M. Buckanie and F.-J. Meyer zu Heringdorf,
Plasmonics 0 (2011) DOI
Transient reversal of a Peierls-transition: Extreme phonon softening in laser-excited Bismuth, W. Lu, M. Nicoul, U. Shymanovich, A. Tarasevitch, M. Kammler, M. Horn-von Hoegen, D. von der Linde and K. Sokolowski-Tinten,
Ultrafast Phenomena XVII (2011) p. 314
Anisotropic scattering of surface state electrons at a point defect on Bi(111), M. C. Cottin, C. A. Bobisch, J. Schaffert, G. Jnawali, A. Sonntag, G. Bihlmayer, and R. Möller ,
Appl. Phys. Lett. 98 (2011) p. 22108 DOI
Growth temperature dependent graphene alignment on Ir(111), H. Hattab, A.T. N'Diaye, D. Wall, G. Jnawali, J. Coraux, C. Busse, R. van Gastel, B. Poelsema, T. Michely, F.-J. Meyer zu Heringdorf, and M. Horn-von Hoegen
,
Appl. Phys. Lett. 98 (2011) p. 141903 DOI
Atomically smooth epitaxial p-doped silicon nanowires catalyzed by aluminum at low-temperature, O. Moutanabbir, S. Senz, R. Scholz, M. Alexe, Y. Kim, Yuwe Wang, C. Wiethoff, T. Nabbefeld, F. Meyer zu Heringdorf, M. Horn-von Hoegen ,
ACS Nano 5 (2) (2011) pp. 1313-1320 DOI
Lost in reciprocal space? Determination of scattering condition in spot profile analysis low energy electron diffraction, C. Klein, T. Nabbefeld, H. Hattab, D. Meyer, G. Jnawali, M. Kammler, F. Meyer zu Heringdorf, A. Golla-Franz, B.H Müller, Th. Schmidt, M. Henzler, and M. Horn-von Hoegen ,
Rev. Sci. Instrum. 82 (2011) p. 35111 DOI
Two-dimensional electron transport and scattering in Bi(111) surface states, G. Jnawali, Th. Wagner, H. Hattab, R. Möller, A. Lorke, M. Horn-von Hoegen,
Elec. J.Surf. Sci. Nanotechnol. 8 (2010) p. 27 DOI
Extreme phonon softening in laser-excited Bismuth - towards an inverse Peierls-transition, Wei Lu, M. Nicoul, U. Shymanovich, A. Tarasevitch, M. Kammler, M. Horn-von Hoegen, D. von der Linde, K. Sokolowski-Tinten,
MRS Symp. Proc. 1230E (2010) pp. 3-5 DOI
The role of thermal and electronic pressure in the picosecond acoustic response of femtosecond laser-excited solids, U. Shymanovich, M. Nicoul, S. Kähle, Wei Lu, A. Tarasevitch, Ping Zhou, T. Wietler, M. Horn-von Hoegen, D. von der Linde, K. Sokolowski-Tinten,
MRS Symp. Proc. 1230E (2010) pp. 6 DOI
Silver Induced Faceting of Si(112), T. Nabbefeld, C. Wiethoff, F.-J. Meyer zu Heringdorf, M. Horn-von Hoegen,
Appl. Phys. Letter 97 (2010) p. 41905 DOI
Nonlinear photoemission microscopy with surface plasmon polaritons, F.-J. Meyer zu Heringdorf, N. Buckanie,
Microsc. Microanal. 16 (2010) p. 502 DOI
Coherent acoustic and optical phonons in laser-excited solids studied by ultrafast time-resolved X-ray diffraction, U. Shymanovich, M. Nicoul, W. Lu, A. Tarasevitch, M. Kammler, M. Horn-von Hoegen, D. von der Linde, K. Sokolowski-Tinten,
High-Power Laser Ablation 2010, AIP Conf. Proc. 1278 (2010) p. 558 DOI
Imaging diffusion fields on a surface with multiple reconstructions: Ag/Si(111) , D. Wall, I. Lohmar, K.R. Roos, J. Krug, M. Horn-von Hoegen, F.-J. Meyer zu Heringdorf,
New J. Physics 12 (2010) p. 103019 DOI
Steering the growth and watching the strain of epitaxial graphene on Iridium(111), A.T. N'Diaye, R. van Gastel, A.J. Martinez-Galera, J. Coraux, H. Hattab, D. Wall, F.-J. Meyer zu Heringdorf, M. Horn-von Hoegen, J.M. Gomez-Rodriguez, B. Poelsema, C. Busse, Th. Michely,
IMC17 Conference Proceedings (2010) p. 11.4
High temperature surface diffusion involving multiple reconstructions: Ag/Si(111), D. Wall, I. Lohmar, K.R. Roos, J. Krug, F.-J. Meyer zu Heringdorf, M. Horn-von Hoegen,
IMC17 Conference Proceedings (2010) p. 11511
Imaging of surfaces plasmon polariton waves in two photon photoemission microscopy, F.-J. Meyer zu Heringdorf, S. Sindermann, P. Kirschbaum, N.M. Buckanie,
IMC17 Conference Proceedings (2010) p. 11515
Ultra-fast time-resolved electron diffraction of strongly driven phase transitions on silicon surfaces, S. Möllenbeck, A. Hanisch-Blicharski, P. Schneider, M. Ligges, P. Zhou, M. Kammler, B. Krenzer and M. Horn-von Hoegen,
MRS Proceedings 1230-MM03-09 (2009) DOI
Epitaxial growth of Bi(111) on Si(001), G. Jnawali, H. Hattab, C. A. Bobisch, E. Zubkov, C. Deiter, T. Weisemoeller, F. Bertram, J. Wollschläger, R. Möller, M. Horn-von Hoegen,
e-J. of Surf. Sci. Nanotech. 7 (2009) pp. 441-447 DOI
Stable tungsten silicide contacts for surface sensitive conductivity measurements, G. Jnawali, F.-J. Meyer zu Heringdorf, D. Wall, S. Sindermann, M. Horn-von Hoegen,
J. Vac. Sci Technol. B27 (2009) p. 180 DOI
Nucleation and initial growth in the semimetallic homoepitaxial system of Bi on Bi(111), G. Jnawali, Th. Wagner, H. Hattab, R. Möller, M. Horn-von Hoegen,
Phys. Rev. B79 (2009) p. 193306 DOI
Nanoscale dislocation patterning in Bi(111)/Si(001) heteroepitaxy, G. Jnawali, H. Hattab, C.A. Bobisch, A. Bernhart, E. Zubkov, R. Möller, M. Horn-von Hoegen,
Surf. Sci. 603 (2009) p. 2057 DOI
Space charge effects in photoemission electron microscopy using amplifed femtosecond laser pulses, N. M. Buckanie, J. Göhre, P. Zhou, D. von der Linde, M. Horn-von Hoegen, F.-J. Meyer zu Heringdorf,
J. Phys.: Condens. Matter 21 (2009) p. 314003 Link
The influence of anisotropic diffusion on Ag nanowire formation, D. Wall, S. Sindermann, M. Horn-von Hoegen, F.-J. Meyer zu Heringdorf,
J. Phys.: Condens. Matter 21 (2009) p. 314023 Link
Growth of graphene on Ir(111), J. Coraux, A. T. N'Diaye, M. Engler , C. Busse, D. Wall, N. Buckanie, F.-J. Meyer zu Heringdorf, R. van Gastel, B. Poelsema, T. Michely,
New J. Phys. 11 (2009) p. 23006 DOI
Electronic acceleration of atomic motions and disordering in bismuth, G. Sciaini, M. Harb, S. G. Kruglik, T. Payer, C. T. Hebeisen, F.-J. Meyer zu Heringdorf, M. Yamaguchi, M. Horn-von Hoegen, R. Ernstorfer, R. J. Dwayne Miller,
Nature 458 (2009) p. 56 DOI
Phonon confinement effects in ultra-thin, epitaxial Bismuth-films on Silicon studied by time-resolved electron diffraction, B. Krenzer, A. Hanisch-Blicharski, P. Schneider, Th. Payer, S. Möllenbeck, O. Osmani, M. Kammler, R. Meyer, M. Horn-von Hoegen,
Phys. Rev. B80 (2009) p. 24307 DOI
Atomic View of the Photoinduced Collapse of Gold and Bismuth, R. Ernstorfer, M. Harb, C.T. Hebeisen, G. Sciaini, T. Dartigalongue, I. Rajkovic,M. Ligges, D. von der Linde, Th. Payer, M. Horn-von-Hoegen, F.-J. Meyer zu Heringdorf, S. Kruglik, R.J.D. Miller,
Ultrafast Phenomena XVI 92 (2009) pp. 113-115 DOI
Electron-phonon energy transfer in Bi observed by time resolved electron diffraction, I. Rajkovic,M. Ligges, P. Zhou, Th. Payer, F.-J. Meyer zu Heringdorf, M. Horn-von-Hoegen, D. von der Linde,
Ultrafast Phenomena XVI
92 (2009) pp. 110-112 DOI
Selecting a single orientation for millimeter sized graphene sheets, R. van Gastel, A.T. N'Diaye, D. Wall, J. Coraux, C. Busse, N.M. Buckanie, F.-J. Meyer zu Heringdorf, M. Horn-von Hoegen, T. Michely, B. Poelsema,
Appl. Phys. Lett. 95 (2009) p. 121901 DOI
In situ observation of stress relaxation in epitaxial graphene, A.T. N'Diaye, R. van Gastel, G. Martinez, J. Coraux, H. Hattab, F.-J. Meyer zu Heringdorf, D. Wall, M. Horn-von Hoegen, J.-M. Gomez-Rodriguez, B. Poelsema, C. Busse, T. Michely,
New J. of Phys. 11 (2009) p. 113056 DOI
Transient Cooling of Ultrathin Epitaxial Bi(111)-Films on Si(111) upon Femtosecond Laser Excitation Studied by Ultrafast Reflection High Energy Electron Diffraction", A. Hanisch-Blicharski, B. Krenzer, S. Möllenbeck, M. Ligges, P. Zhou, M. Kammler, M. Horn-von Hoegen,
MRS Symp. Proc. 1172 (2009) pp. 4-8 Link
Electromigration and Potentiometry Measurements of Single-Crystalline Ag Nanowires under UHV Conditions, M.R. Kaspers, A.M. Bernhart, F.-J. Meyer zu Heringdorf, G. Dumpich, R. Möller,
J. Phys. Condens. Matter 21 (2009) p. 265601 DOI
Nonlinear Photoemission Microscopy: A tool for the Plasmonic Sandbox, F.-J. Meyer zu Heringdorf, N. M. Buckanie,
Proceedings of the ALC '09 Conference 96-99 (2009)
Ultra-fast Time-Resolved Electron Diffraction of Strongly Driven Phase Transitions on Silicon Surfaces, S. Möllenbeck, A. Hanisch-Blicharski, P. Schneider, M. Ligges, P. Zhou, M. Kammler, B. Krenzer, M. Horn-von Hoegen,
MRS Symp. Proc. 1230 (2009) pp. 3-9 DOI
Nanopattern Formation by Periodic Array of Interfacial Misfit Dislocations in Bi(111)/Si(001) Heteroepitaxy, G. Jnawali, H. Hattab, C. Bobisch, A. Bernhart, E. Zubkov, F.-J. Meyer zu Heringdorf, R.Möller, B. Krenzer, M. Horn-von Hoegen,
MRS Proceedings (2008) Link
Absence of surface stress change during pentacene thin film growth on the Si(111)-(7x7) surface: a buried reconstruction interface, P. Kury, K.R. Roos, M. Horn- von Hoegen, F.-J. Meyer zu Heringdorf,
New Journal of Physics 10 (2008) p. 23037 DOI
Disorder-mediated ordering by self-interfactant effect in organic thin film growth of pentacene on silicon, P. Kury, K.R. Roos, D. Thien, S. Möllenbeck, D. Wall, M. Horn- von Hoegen, F.-J. Meyer zu Heringdorf,
Organic Electronics 9 (2008) p. 461 DOI
The application of low energy electron microscopy and photoemission electron microscopy to organic thin films, F.-J. Meyer zu Heringdorf,
Journal of Physics: Condensed Matter 20 (2008) p. 184007 DOI
Growth of Ag nanowires on Au-pre-facetted 4? vicinal Si(0 0 1), F.-J. Meyer zu Heringdorf, K.L. Roos, Chr. Wiethoff, M. Horn- von Hoegen, K.R. Roos,
Surface Science 601 (2008) p. 1852 DOI
Real-Time View of Mesoscopic Surface Diffusion, K.R. Roos, K.L. Roos, I. Lohmar, D. Wall, J. Krug, M. Horn- von Hoegen, F.-J. Meyer zu Heringdorf,
Physical Review Letters 100 (2008) p. 16103 DOI
Epitaxial growth of thin, low defect Bi films on Si(001): strain state, surface morphology and defects, H. Hattab, E. Zubkov, A. Bernhart, G. Jnawali, C.Bobisch, B. Krenzer, M. Acet, R. Möller, M. Horn-von Hoegen,
Thin Solid Films 516 (2008) p. 8227 DOI
Thermal response of epitaxial thin Bi films on Si(001) upon femtosecond laser excitation studied by ultrafast electron diffraction, A. Hanisch, B. Krenzer, T. Pelka, S. Möllenbeck, M. Horn-von Hoegen,
Phys. Rev. B 77 (2008) p. 125410 DOI
Heat transport in nanoscale heterosystems: a numerical simulation and analytical solution, B. Krenzer, A. Hanisch, A. Janzen, A. Duvenbeck, B. Rethfeld, M. Horn-von Hoegen,
J. of Nanomaterials 2008 (2008) p. 590609 DOI
Homoepitaxial growth of Bi(111), G. Jnawali, H. Hattab, C. Bobisch, A. Bernhart, E. Zubkov, R. Möller, M. Horn-von Hoegen,
Phys. Rev. B 78 (2008) p. 35321 DOI
Exciton sensitive microscopy of anthracene thin films on Si(111), N.M. Buckanie, F.-J. Meyer zu Heringdorf,
Organic Electronics 10 (2008) p. 446 DOI
Au stabilization and coverage of sawtooth facets on Si nanowires grown by vapor-liquid-solid epitaxy, C. Wiethoff, F.M. Ross, M. Copel, M. Horn-von Hoegen, F.-J. Meyer zu Heringdorf,
Nanoletters 8 (2008) p. 3065 DOI
Ultrathin Epitaxially Grown Bismuth (111) Membranes, T. Payer, I. Rajkovic, M. Ligges, D. von der Linde, M. Horn-von Hoegen, F.-J. Meyer zu Heringdorf,
Appl. Phys. Lett. 93 (2008) p. 93102 DOI
LEEM/PEEM Study of Anisotropic Diffusion Fields in the Ag/Si(001) System, D. Wall, K. R. Roos, M. Horn-von Hoegen, F.-J. Meyer zu Heringdorf,
MRS Symp. Proc. 1088E (2008) Link
A pulsed electron gun for ultrafast electron diffraction at surfaces, A. Janzen, B. Krenzer, O. Heinz, P. Zhou, D. Thien, A. Hanisch, F.-J., Meyer zu Heringdorf, D. von der Linde, M. Horn-von Hoegen,
Rev. Sci. Inst. 78 (2007) p. 13906 DOI
Diffraction of strongly convergent X-rays from picosecondacoustic transients, U. Shymanovich, M. Nicoul, J. Blums, K. Sokolowski-Tinten, A.Tarasevitch, T. Wietler, M. Horn-von Hoegen, D. von der Linde,
Appl. Phys. A 87 (2007) p. 7 DOI
Photoemission electron microscopy study of anthracene growth on Si(111), N.M. Buckanie, F.-J. Meyer zu Heringdorf,
Surface Science 601 (2007) p. 1701 DOI
In situ monitoring of surface plasmons in single-crystalline Ag-nanowires, L.I. Chelaru, F.-J. Meyer zu Heringdorf,
Surface Science 601 (2007) p. 4541 DOI
Lattice-matching periodic array of misfit dislocations: Heteroepitaxy of Bi(111) on Si(001), G. Jnawali, H. Hattab, F.-J. Meyer zu Heringdorf, B. Krenzer, M. Horn- von Hoegen,
Phsical Review B 76 (2007) p. 35337 DOI
Femtosecond photoemission microscopy, F.-J. Meyer zu Heringdorf, L.I. Chelaru, S. Möllenbeck, D. Thien, M. Horn-von Hoegen,
Surface Science 601 (2007) p. 4700 DOI
Ultrafast bond softening in Bismuth: Mapping a solid`s interatomic potential with X-rays, D. M. Fritz, D. A. Reis, B. Adams, R. A. Akre, J. Arthur, C. Blome, P. H. Bucksbaum, A. L. Cavalieri, S. Engemann, S. Fahy, R. W. Falcone, P. H. Fuoss, K. J. Gaffney, M. J. George, J. Hajdu, M. P. Hertlein, P. B. Hillyard, M. Horn-von Hoegen, et al.,
Science 315 (2007) p. 633 DOI
Domain Sensitive Contrast in Photoelectron Emission Microscopy, D. Thien, P. Kury, M. Horn- von Hoegen, F.-J. Meyer zu Heringdorf,
Physical Review Letters 99 (2007) p. 196102 DOI
Electromigration in Self-Organized Single-Crystalline Silver Nanowires, B. Stahlmecke, F.-J. Meyer zu Heringdorf, L. I. Chelaru, M. Horn-von Hoegen, G. Dumpich,
Appl. Phys. Lett. 88 (2006) p. 53122 DOI
Electromigration in Gold and Single Crystalline Silver Nanowires, B. Stahlmecke, L. I. Chelaru, F.-J. Meyer zu Heringdorf, G. Dumpich,
AIP Conference Proceedings 817 (2006) pp. 65-70 DOI
Analysis of mesoscopic patterns formed by the Au-induced faceting of vicinal Si(001), F.-J. Meyer zu Heringdorf,
J. Phys.: Cond. Matter 18 (2006) pp. 1-15 DOI
Dynamics of an Ising chain under local excitation: An STM study of Si(100) dimer rows at T = 5K , Y. Pennec, M. Horn-von Hoegen, D.C. Fortin, M. R. Freeman,
Phys. Rev. Lett. 96 (2006) p. 26102 DOI
Less strain energy despite fewer misfit dislocations: The impact of ordering, Th. Schmidt, R. Kröger, J.I. Flege, T. Clausen, J. Falta, A. Janzen, P. Zahl, P. Kury, M. Kammler, M. Horn-von Hoegen,
Phys. Rev. Lett. 96 (2006) p. 66101 DOI
Ultrafast electron diffraction at surfaces after laser excitation, A. Janzen, B. Krenzer, P. Zhou, D. von der Linde, M. Horn-von Hoegen,
Surf. Sci. 600 (2006) p. 4094 DOI
Fringe Fields in Nonlinear Photoemission Microscopy, L.I. Chelaru, M. Horn-von Hoegen, D. Thien, F.-J. Meyer zu Heringdorf,
Phys. Rev. B 73 (2006) p. 115416 DOI
Thermal Boundary Conductance in Heterostructures Studied by Ultrafast Electron Diffraction, B. Krenzer, A. Janzen, P. Zhou, D. von der Linde, M. Horn-von Hoegen,
New J. Phys. 8 (2006) p. 190 DOI
Lattice accommodation of epitaxial Bi(111) films on Si(001) studied with SPA-LEED and AFM, G. Jnawali, H. Hattab, B. Krenzer, M. Horn-von Hoegen,
Phys. Rev. B 74 (2006) p. 195340 DOI
Three-dimensional size determination of particles with photoelectron emission microscopy, Liviu I. Chelaru, Frank-J. Meyer zu Heringdorf,
Appl. Phys. Lett. 89 (2006) p. 241908 DOI
Energy relaxation and anomalies in the thermo-acoustic response of femtosecond laser-excited Germanium, K. Sokolowski-Tinten, U. Shymanovich, M. Nicoul, J. Blums, A. Tarasevitch, M. Horn-von-Hoegen, D. von der Linde, A. Morak, T. Wietler,
Ultrafast Phenomena XV 88 (2006) p. 597 DOI
Controlled nucleation of dislocations by a spatially localized stress field, M. Kammler, D. Chidambarrao, K. W. Schwarz, C. T. Black, and F. M. Ross,
Appl. Phys. Lett. 87 (2005) p. 133116 DOI
SSIOD: the next generation, P. Kury, T. Grabosch, M. Horn-von Hoegen,
Rev. Sci. Instrum. 76 (2005) p. 23903 DOI
Low energy electron diffraction of epitaxial growth of bismuth on Si(111), M. Kammler, M. Horn-von Hoegen,
Surf. Sci. 576 (2005) p. 56 DOI
Strain state analysis of hetero-epitaxial systems, A.A. AlFalou, M. Kammler, M. Horn-von Hoegen,
Europhysics Lett. 69(4) (2005) p. 570 DOI
Surfactant-mediated epitaxy of Ge on Si(111): beyond the surface, Th. Schmidt, R. Kröger, T. Clausen, J. Falta, A. Janzen, M. Kammler, P. Kury, P. Zahl, M. Horn-von Hoegen,
Appl. Phys. Lett. 86 (2005) p. 111910 DOI
High Temperature self-assembly of Ag nanowires on vicinal Si(001), K.R. Roos, K.L. Roos, M. Horn-von Hoegen, F.-J. Meyer zu Heringdorf,
J. Phys.: Cond. Matter 17 (2005) p. 1407 DOI
Reciprocal Space Mapping by spot profile analyzing low energy electron diffraction, F.-J. Meyer zu Heringdorf, H. Pietsch, M. Horn-von Hoegen,
Rev. Sci. Instrum. 76 (2005) p. 85102 DOI
Compact and transferable threefold evaporator for molecular beam epitaxy in ultrahigh vacuum , P. Kury, R. Hild, D. Thien, H.-L. Günter, F.-J. Meyer zu Heringdorf, M. Horn-von Hoegen,
Rev. Sci. Instrum. 76 (2005) p. 83906 DOI
Ultrafast X-Ray Diffraction, K. Sokolowski-Tinten, C. Blome, J. Blums, U. Shymanovich, M. Nicoul, A. Cavalleri, A. Tarasevitch, M. Horn-von Hoegen, M. Kammler, D. von der Linde,
Ultrafast Phenomena XIV 79 (2005) p. 170 DOI
Transition in growth mode by competing strain relaxation mechanisms: surfactant mediated epitaxy of SiGe alloys on Si, M. Kammler, M. Horn-von Hoegen,
Appl. Phys. Lett. 85 (2004) p. 3056 DOI
Direct observation of reconstruction induced changes of surface stress for Sb on Si(111), P. Kury, P. Zahl, M. Horn-von Hoegen,
Anal. Bioanal. Chem. 379 (2004) p. 582 DOI
Characterizing Single Crystal Surfaces using High Resolution Electron Diffraction, D. Thien, F.-J. Meyer zu Heringdorf , P. Kury , M. Horn-von Hoegen,
Anal. Bioanal. Chem. 379 (2004) p. 588 DOI
Impact of thermal dependence of elastic constants on surface stress measurements, Peter Kury, Michael Horn-von Hoegen,
Rev. Sci. Instrum. 75 (2004) p. 1357 DOI
Precise calibration for surface stress induced optical deflection measurements, P. Kury, P. Zahl, M. Horn-von Hoegen,
Rev. Sci. Instrum. 75 (2004) p. 2211 DOI
Strain relief during Ge hut cluster formation on Si(001) studied by high resolution LEED and surface-stress-induced optical deflection, M. Horn-von Hoegen, B.H. Müller, T. Grabosch, P. Kury,
Phys. Rev. B 70 (2004) p. 235213 DOI
Flexible microprocessor-based evaporation controller, F.-J. Meyer zu Heringdorf, A.C. Belton,
Rev. Sci. Instrum. 75 (2004) p. 5288 DOI
Chopped sample heating for quantitative profile analysis of low energy electron diffraction spots at high temperatures, P. Kury, P. Zahl, M. Horn-von Hoegen, C. Voges, H. Frischat, H.-L. Günter, H. Pfnür, M. Henzler,
Rev. Sci. Instrum. 75 (2004) p. 4911 DOI
Femtosecond X-ray measurement of coherent lattice vibrations near the Lindemann stability limit, K. Sokolowski-Tinten, C. Blome, J. Blums, A. Cavalleri, C. Dietrich, A. Tarasevitch, I. Uschmann, E. Förster, M. Kammler, M. Horn-von Hoegen, D. von der Linde,
Nature 422 (2003) p. 287 DOI
Ge on Si(001) - a hetero epitaxial playground for surface science, Michael Horn-von Hoegen,
Surface Science 537 (2003) pp. 1-3 DOI
Finite collection time effects in autocovariance function measurements, A. Menzel, E.H. Conrad, M.C. Tringides, M. Kammler, M. Horn-von Hoegen,
J. of Applied Physics 93 (2003) pp. 2229-2235 DOI
Self-organisation of Ge nanostructures on i(111): A SPA-LEED and STM Study, R. Hild, M. Kammler, I. Dumkow, and M. Horn-von Hoegen,
Omicron Newsletter 5(3) (2002) p. 2
Si(001)step dynamics: a temporal low-energy electron diffraction study, M. Kammler, M. Horn-von Hoegen, N. Voss, M. Tringides, A. Menzel, E.H. Conrad,
Phys. Rev. B 65 (2002) pp. 75312-75319 DOI
Third-generation generation cone-shaped SPA-LEED, P. Zahl and M. Horn-von Hoegen,
Rev. Sci. Instrum. 73 (2002) pp. 2958-2962 DOI
Erratum to: Local Au coverage as driving force for Au induced faceting of vicinal Si(001):a LEEM and XPEEM study [Surf. Sci. 480 (2001) 103], Frank-J. Meyer zu Heringdorf, R. Hild, P. Zahl, Th. Schmidt, B. Ressel, S. Heun, E. Bauer, M. Horn-von Hoegen,
Surf. Sci. 496 (2002) p. 151 DOI
Kinetics of Au induced faceting of vicinal Si(111), R. Hild, C. Seifert, M. Kammler, F.-J. Meyer zu Heringdorf, M. Horn-von Hoegen, R. Zachuk, B. Z. Olshanetsky,
Surf. Sci. 512 (2002) pp. 117-127 DOI
Step and kink correlations on vicinal Ge(100) surfaces investigated by electron diffraction, Ch. Tegenkamp, J. Wollschläger, H. Pfnür, F.-J. Meyer zu Heringdorf, M. Horn-von Hoegen,
Phys. Rev. B 65 (2002) p. 235316 DOI
Time-Resolved X-ray Diffraction Study of Ultrafast Structural Dynamics in Laser-Excited Solids, K. Sokolowski-Tinten, C. Blome, C. Dietrich, A. Tarasevitch, M. Horn-von Hoegen, D. von der Linde, A. Cavalleri, J.A. Squier, M. Kammler,
Ultrafast Phenomena XIII 71 (2002) p. 36 Link
Surface dynamics of stepped Si(001) studied by temporal LEED spectroscopy, M. Kammler, M. Horn-von Hoegen, N. Voss, M. Tringides, A. Menzel, E.H. Conrad,
Collective surface diffusion coefficients under non-equilibrium conditions, Vol. 29 of NATO Advanced (2001)
Spatial Variation of Au Coverage as the Driving Force for Nanoscopic Pattern Formation, Frank-J. Meyer zu Heringdorf, Th. Schmidt, S. Heun, R. Hild, P. Zahl, B. Ressel, E. Bauer, M. Horn-von Hoegen,
Phys. Rev. Lett. 86 (2001) pp. 5088-5091 DOI
Local Au coverage as driving force for Au induced faceting of vicinal Si(001): a LEEM and XPEEM study, Frank-J. Meyer zu Heringdorf, R. Hild, P. Zahl, Th. Schmidt, B. Ressel, S. Heun, E. Bauer, M. Horn-von Hoegen,
Surf. Sci. 480 (2001) pp. 103-108 DOI
Au induced reconstructions on Si(111), C. Seifert, R. Hild, M. Horn-von Hoegen, R. Zachuk, B. Z. Olshanetsky,
Surf. Sci. 488 (2001) pp. 233-238 DOI
Ultrafast x-ray measurement of laser heating in semiconductors: Parameters determining the melting threshold", A. Cavalleri, C.W. Siders, C. Rose-Petruck, R. Jimenez, Cs. T?th, J. A. Squier, C. P. J. Barty, K. R. Wilson, K. Sokolowski-Tinten, M. Horn-von Hoegen, D. von der Linde,
Phys. Rev. B 63 (2001) p. 193306 DOI
Characterization of Ge deltadoped Si(111) with RBS-channeling, J. Yuhara, K. Morita, J. Falta, B.H. Müller and M. Horn-von Hoegen,
Surface & Interface Analysis 31 (2001) pp. 754-760 DOI
Thermal activation of dislocation array formation, A. Janzen, I. Dumkow, M. Horn-von Hoegen,
Appl. Phys. Lett. 79 (2001) pp. 2387-2389 DOI
Femtosecond X-ray measurement of ultrafast melting and large acoustic transients, K. Sokolowski-Tinten, C. Blome, C. Dietrich, A. Tarasevitch, M. Horn-von Hoegen, D. von der Linde, A. Cavalleri, J. Squier, M. Kammler,
Phys. Rev. Lett. 87 (2001) p. 225701 DOI
Transient lattice dynamics in fs-laser-excited semiconductors probed by ultrafast x-ray diffraction, K. Sokolowski-Tinten, M. Horn-von Hoegen, D. von der Linde, A. Cavalleri, C.W. Siders, F.L.H. Brown, D.M. Leitner, Cs. Toth, C.P.G. Barty, J.A. Squier, K.R. Wilson, M. Kammler,
J. de Physique IV 11 (2001) p. 2 DOI
Direct observation of ultrafast non-thermal melting by ultrafast X-ray diffraction, C.W. Siders, A. Cavalleri, K. Sokolowski-Tinten, Cs. Toth, T. Guo, M. Kammler, M. Horn-von Hoegen, K.R. Wilson, D. von der Linde, C.P.J. Barty,
Ultrafast Phenomena XII 66 (2000) p. 276
Au induced regular ordered striped domain wall structure of a (5x3) reconstruction on Si(001) studied by STM and SPA-LEED, R. Hild, F.-J. Meyer zu Heringdorf, P. Zahl and M. Horn-von Hoegen,
Surf. Sci. 454 (2000) pp. 851-855 DOI
Formation of hill and valley structures on Si(001) vicinal surfaces studied by spot-profile-analyzing LEED, H. Minoda, T. Shimakura, K. Yagi, F.-J. Meyer zu Heringdorf and M. Horn-von Hoegen,
Phys. Rev. B 61 (2000) pp. 5672-5678 DOI
Anharmonic lattice dynamics in Germanium measured with ultrafast x-ray diffraction, A. Cavalleri, C.W. Siders, F.L.H. Brown, D.M. Leitner, C. T?th, J.A. Squier, C.P.J. Barty, K.R. Wilson, K. Sokolowski-Tinten, M. Horn-von Hoegen, D. von der Linde, M. Kammler,
Phys. Rev. Lett. 85 (2000) pp. 586-589 DOI
Hydrogen induced domain-wall structure on Si(113), F.-J. Meyer zu Heringdorf, H. Goldbach, H.L. Guenter, M. Horn-von Hoegen, V. Dorna, U. Koehler, M. Henzler,
Surf. Sci. 458 (2000) pp. 147-154 DOI
Time-resolved X-ray diffraction study of ultrafast acoustic phonon dynamics in Ge/Si heterostructures, K. Sokolowski-Tinten, A. Cavalleri, C. W. Siders, F.L.H. Brown, D. M. Leitner, Cs. Toth, M. Kammler, M. Horn-von Hoegen, D. von der Linde, J. A. Squier, C. P. J. Barty , K. R. Wilson,
Ultrafast Phenomena XII
66 (2000) p. 281 Link
3-dim. Reciprocal space mapping of a quasi periodic misfit dislocation array, M. Kammler, T. Schmidt, P. Zahl, P. Kury, J. Falta, and M. Horn-von Hoegen,
HASYLAB/DESY Annual Report 0 (1999) Link
Ultrafast movies of atomic motion with femtosecond laser-based X-rays, C. W. Siders, A. Cavalleri, K. Sokolowski-Tinten, T. Guo, C. Toth, R. Jimenez, C. Rose-Petruck, M. Kammler, M. Horn-von Hoegen, D. von der Linde, K. R. Wilson, C. P. J. Barty,
SPIE Proceedings 3776 (1999) p. 302 DOI
Ag on Si surfaces: from insulator to metal, M. Horn-von Hoegen, M. Henzler and G. Meyer,
Morphological Organization in Epitaxial Growth, Ed. Z. Zhang and M.G. Lagally, World Scientific (1999) pp. 403-420 Link
Surfactant-mediated epitaxy of Ge on Si: progress in growth and electrical characterization, M. Kammler, D. Reinking, K.R. Hofmann and M. Horn-von Hoegen,
Thin Solid Films 336 (1999) pp. 29-33 DOI
Gold-induced faceting on a Si(001) vicinal surface: SPA-LEED and REM study, H. Minoda, K. Yagi, F.-J. Meyer zu Heringdorf, A. Meier, D. Kähler and M. Horn-von Hoegen,
Phys. Rev. B 59 (1999) pp. 2363-2375 DOI
Adsorbate induced giant faceting of vicinal Si(001), M. Horn-von Hoegen, F.-J. Meyer zu Heringdorf, R. Hild, P. Zahl, Th. Schmidt and E. Bauer,
Thin Solid Films 336 (1999) pp. 16-21 Link
Bi surfactant mediated epitaxy of Ge on Si(111), M. Horn-von Hoegen, F.-J. Meyer zu Heringdorf, M. Kammler, C. Schaeffer, D. Reinking, and K.R. Hofmann,
Thin Solid Films 343-344 (1999) pp. 579-582 DOI
Au induced giant faceting of vicinal Si(001), M. Horn-von Hoegen, F.-J. Meyer zu Heringdorf, R. Hild, P. Zahl, Th. Schmidt and E. Bauer,
Surf. Sci. 433-435 (1999) pp. 475-480 DOI
Fabrication of high-mobility Ge p-channel MOSFETs on Si substrates, D. Reinking, M. Kammler, N. Hoffmann, M. Horn-von Hoegen, K.R. Hofmann,
Electronic Letters 35 (1999) pp. 503-504 Link
Gold-induced faceting on a Si(hhm) surface (m/h=1.4-1.5) studied by SPA-LEED, H. Minoda, T. Shimakura, K. Yagi, F.-J. Meyer zu Heringdorf, M. Horn-von Hoegen,
Surf. Sci. 432 (1999) pp. 69-80 DOI
Spot profile analysis low energy electron diffraction of semiconductor growth, M. Horn-von Hoegen,
Zeitschrift für Kristallographie 214 (1999) pp. 591-629 Link
Spot profile analysis low energy electron diffraction of semiconductor growth, M. Horn-von Hoegen,
Zeitschrift für Kristallographie 214 (1999) pp. 684-721 Link
Interplay of surface morphology and strain relief during surfactant mediated epitaxy of Ge on Si, P. Zahl, P. Kury, and M. Horn-von Hoegen,
Appl. Phys. A 69 (1999) pp. 481-488 DOI
Ge p-MOSFETs Compatible with Si CMOS-Technology, D. Reinking, M. Kammler, N. Hoffmann, M. Horn-von Hoegen, K.R. Hofmann,
Proceedings of the 29th ESSDERC 99 (1999) pp. 300-303 Link
Detection of nonthermal melting by ultrafast X-ray diffraction
, C.W. Siders, A. Cavalleri, K. Sokolowski-Tinten, Cs. Toth, T. Guo, M. Kammler, M. Horn-von Hoegen, K.R. Wilson, D. von der Linde, C.P.J. Barty,
Science 286 (1999) pp. 1340-1342 DOI
Au induced giant faceting of vicinal Si(001), F.-J. Meyer zu Heringdorf, R. Hild, P. Zahl, M. Horn-von Hoegen, Th. Schmidt, S. Heun, B. Ressel, E. Bauer,
Elettra Highlights 98-99 (1999) pp. 42-44 Link
Strain Field of Periodic Dislocation Networks of SME grown Ge on Si(111), M. Kammler, J. Falta, P. Kury, B. H. Müller, T. Schmidt, and M. Horn-von Hoegen,
HASYLAB/DESY Annual Report 0 (1998) Link
Intensity fluctuations from surfaces and the assessment of time constants, M. I. Larsson, M. C. Tringides, H. Pfnür, H. Frischat, K. Budde, M. Kammler, and M. Henzler,
Surf. Sci. 411 (1998) pp. 789-793 DOI
Step arrangement control of vicinal Si(001) by Ag adsorption, A. Meier, P. Zahl, R. Vockenrodt and M. Horn-von Hoegen,
Appl. Surf. Sci. 123/124 (1998) pp. 694-698 DOI
Macroscopic one-dimensional facetting of Si(100) upon Au adsorption, M. Horn-von Hoegen, H. Minoda, K. Yagi, F. Meyer zu Heringdorf and D. Kähler,
Surf. Sci. 402-404 (1998) pp. 464-469 DOI
Surfactant-grown low-doped Germanium layers on Silicon with high electron mobilities, K. Hofmann, D. Reinking, M. Kammler and M. Horn-von Hoegen,
Thin Solid Films 321 (1998) pp. 125-130 DOI
X-ray characterization of buried delta layers, J. Falta, D. Bahr, G. Materlik, B.H. Müller and M. Horn-von Hoegen,
Surface Review and Letters 5 (1998) pp. 145-149 DOI
Giant faceting of vicinal Si(001) induced by Au adsorption, F.-J. Meyer zu Heringdorf, Th. Schmidt, E. Bauer, D. Kähler, H. Minoda, K. Yagi and M. Horn-von Hoegen,
Surface Review and Letters 5 (1998) pp. 1167-1178 DOI
High concentration Bi delta-doping layers on Si(001), J. Falta, O. Mielmann, T. Schmidt, A. Hille, C. Sanchez-Hanke, P. Sonntag, G. Materlik, F. Meyer zu Heringdorf, M. Kammler, M. Horn-von Hoegen, M. Copel,
Appl. Surf. Sci. 123/124 (1998) pp. 538-541 DOI
Surface morphology changes due to adsorbates and due to electron bombardement, M. Henzler, D. Thielking, M. Horn-von Hoegen and V. Zielasek,
Physica A 261 (1998) pp. 1-12 DOI
Surfactant mediated heteroepitaxy: Interplay of diffusion, strain relief, and surface morphology, M. Horn-von Hoegen,
Proc. NATO-ASI Workshop on Surface Diffusion: atomistic and Collective Processes, Eds. M.C. Tringide (1997)
Ag-mediated step-bunching instability on vicinal Si(100), S. Fölsch, G. Meyer, D. Winau, K.H. Rieder, M. Horn-von Hoegen, T. Schmidt and M. Henzler,
Surf. Sci. 394 (1997) pp. 60-70 DOI
Enhanced Sb segregation in surfactant-mediated heterogrowth: High-mobility, low-doped Ge on Si, D. Reinking, M. Kammler, M. Horn-von Hoegen and K. Hofmann,
Appl. Phys. Lett. 71 (1997) pp. 924-926 DOI
High electron mobilities in surfactant-grown Germanium on Silicon substrates, D. Reinking, M. Kammler, M. Horn-von Hoegen and K. Hofmann,
Jap. J. Appl. Phys. Lett. 36 (1997) pp. 1082-1085 DOI
X-ray interface characterization of Ge delta layers on Si(001), D. Bahr, J. Falta, G. Materlik, B.H. Müller and M. Horn-von Hoegen,
Physica B 221 (1996) pp. 96-100 DOI
Adsorbate induced change of equilibrium surface during crystal growth: Si on Si(111)/H, M. Horn-von Hoegen and A. Golla,
Phys. Rev. Lett. 76 (1996) pp. 2953-2956 DOI
Towards perfect Ge delta layers on Si(001), J. Falta, D. Bahr, G. Materlik, B.H. Müller and M. Horn-von Hoegen,
Appl. Phys. Lett. 68 (1996) pp. 1394-1396 DOI
Stress reduction and interface quality of buried Sb delta-layers on Si(001), J. Falta, D. Bahr, A. Hille, G. Materlik, M. Kammler and M. Horn-von Hoegen,
Appl. Phys. Lett. 69 (1996) pp. 2906-2908 DOI
Epitaxial layer growth of Ag(111)-films on Si(100), M. Horn-von Hoegen, T. Schmidt, G. Meyer, D. Winau and K.H. Rieder,
Surf. Sci. 331-333 (1995) pp. 571-579 DOI
Surfactants in Si(111) homoepitaxy, M. Horn-von Hoegen, J. Falta, M. Copel and R.M. Tromp,
Appl. Phys. Lett. 66 (1995) pp. 487-489 DOI
Interface roughening of Ge delta layers on Si(111), J. Falta, T. Gog, G. Materlik, B.H. Müller and M. Horn-von Hoegen,
Phys. Rev. B 51 (1995) p. 7598 DOI
Lattice accomodation of Si(001) and Ag(111), M. Horn-von Hoegen, T. Schmidt, M. Henzler, G. Meyer, D. Winau and K.H. Rieder,
Phys. Rev. B, Brief Reports 52 (1995) pp. 10764-10767 DOI
Ge d -Layers on Si(111) and Si(001) grown by MBE and SPE, J. Falta, T. Gog, G. Materlik, B.H. Müller and M. Horn-von Hoegen,
MRS Proceedings 375 (1995) pp. 177-180
Reconstruction dependent orientation of Ag(111) films on Si(001), S. Fölsch, G. Meyer, D. Winau, K.H. Rieder, T. Schmidt and M. Horn-von Hoegen,
Phys. Rev. B, Brief Reports 52 (1995) pp. 13745-13748 DOI
Grundschritte der Epitaxie: Sichtbarmachung mit Elektronenbeugung und Rastertunnelmikroskopie, M. Henzler, M. Horn-von Hoegen and U. Köhler,
Nova Acta Leopoldina NF 73 (1995) pp. 31-51
Influence of H on low temperature Si(111) homoepitaxy, M. Horn-von Hoegen and A. Golla,
Surf. Sci. Lett. 337 (1995) pp. 777-782 DOI
Ag-induced multi-step formation on Si(001), S. Fölsch, G. Meyer, D. Winau, K.H. Rieder, M. Horn-von Hoegen, T. Schmidt and M. Henzler,
Appl. Phys. Lett. 67 (1995) pp. 2185-2187 DOI
Surfactant-mediated growth of Ge on Si(111), M. Horn-von Hoegen, M. Copel, J. Tsang, M.C. Reuter and R.M. Tromp,
Phys. Rev. B 50 (1994) pp. 10811-10822 DOI
Surfactant-stabilized strained Ge cones on Si(100), M. Horn-von Hoegen, A. Al Falou, B.H. Müller, U. Köhler, L. Andersohn, B. Dahlheimer and M. Henzler,
Phys. Rev. B 49 (1994) pp. 2637-2650 DOI
Formation of lattice matching interfacial dislocation network in surfactant mediated growth of Ge on Si(111) by an in situ SPA-LEED study, M. Horn-von Hoegen,
Proceedings : 4th international conference on the formation of semiconductor interfaces (ICSFI-4). E (1994)
Lattice matching periodic interfacial dislocation network in surfactant-mediated growth of Ge on Si(111), M. Horn-von Hoegen and M. Henzler,
Phys. Stat. Solidi (a) 146 (1994) pp. 337-352 DOI
Strain relief by micro roughness in surfactant mediated growth of Ge on Si(001), M. Horn-von Hoegen, B. H. Müller and A. Al Falou,
Phys. Rev. B 50 (1994) pp. 11640-11652 DOI
Surfactants: Perfect heteroepitaxy of Ge on Si(111), M. Horn-von Hoegen,
Appl. Phys. A 59 (1994) pp. 503-515 DOI
Homoepitaxy of Si(111) is surface defect mediated, M. Horn-von Hoegen and H. Pietsch,
Surf. Sci. Lett. 321 (1994) pp. 129-136 DOI
The interplay of surface morphology and strain relief in surfactant mediated growth of Ge on Si(111), M. Horn-von Hoegen, M. Pook, A. Al Falou, B. H. Müller and M. Henzler,
Surf. Sci. 284 (1993) pp. 53-66 DOI
Surface morphology and strain relief in surfactant mediated growth of Ge on Si(111), M. Horn-von Hoegen, M. Pook, A. Al Falou, B. H. Müller and M. Henzler,
Scanning Microscopy 7 (1993) pp. 481-488
Surfactant induced reversible changes of surface morphology, M. Horn-von Hoegen, B. H. Müller, A. Al Falou and M. Henzler,
Phys. Rev. Lett. 71 (1993) pp. 3170-3173 DOI
Formation of the interfacial dislocation network in surfactant-mediated growth of Ge on Si(111) by SPALEED, Part I, M. Horn-von Hoegen, A. Al Falou, H. Pietsch, B. H. Müller and M. Henzler,
Surf. Sci. 298 (1993) pp. 29-42 DOI
Layer-by -layer growth of germanium on Si(100): Strain induced morphology and the influence of surfactants, U. Köhler, O. Jusko, B. Müller, M. Horn-von Hoegen and M. Pook,
Ultramicroscopy 42-44 (1992) pp. 832-837 DOI
Growth of monoatomic layers: investigations with electron diffraction and scanning tunneling microscopy, M. Henzler, M. Horn-von Hoegen and U. Köhler,
Festkörperprobleme 32 (1992) p. 333 DOI
Defect self-annihilation in surfactant-mediated epitaxial growth, M. Horn-von Hoegen, F.K. LeGoues, M. Copel, M.C. Reuter and R.M. Tromp,
Phys. Rev. Lett. 67 (1991) p. 1130 DOI
A new two-dimensional particle detector for a toroidal electrostatic analyzer, R.M. Tromp, M. Copel, M.C. Reuter, M. Horn-von Hoegen and J. Speidell,
Rev. Sci. Instrum. 62 (1991) p. 2679 DOI
Strain-relief mechanism in surfactant-grown epitaxial germanium films on Si(111), F.K. LeGoues, M. Horn-von Hoegen, M.Copel and R.M. Tromp,
Phys. Rev. B 44 (1991) pp. 12894-12902 DOI
Influence of surfactants in Ge and Si epitaxy on Si(001), M. Copel, M.C. Reuter, M. Horn-von Hoegen and R.M. Tromp,
Phys. Rev. B. 42 (1990) p. 11682 DOI
SPA-LEED studies of defects in thin epitaxial NiSi2 layers on Si(111), J. Falta, M. Horn and M. Henzler,
Appl. Surf. Sci. 41-42 (1989) pp. 230-235 DOI
The initial stages of growth of silicon on Si(111) by spot profile analysing low-energy electron diffraction, M. Horn-von Hoegen, J. Falta and M. Henzler,
Thin Solid Films. 183 (1989) pp. 213-220 DOI
Nucleation and growth during molecular beam epitaxy (MBE) of Si on Si(111), R. Altsinger, H. Busch, M. Horn and M. Henzler,
Surf. Sci. 200 (1988) pp. 235-246 DOI
Crystal Growth Studies with LEED, M. Horn and M. Henzler,
Proceedings of the 2nd Symposium of Surface Science in Kaprun, Österreich (1988)
LEED investigations of Si MBE on Si(100), M. Horn, U. Gotter and M. Henzler,
Proc. NATO-Workshop on RHEED and Reflection Electron Imaging of Surfaces. Eds.: P.K.Larsen und P.J.D 188 (1988)
Low-energy electron diffraction investigations of Si molecular-beam epitaxy on Si(100), M. Horn, U. Gotter and M. Henzler,
J. Vac. Sci. Technol. B 6 (1988) pp. 727-730 DOI
