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Fakultät für Ingenieurwissenschaften/Lehrstuhl Wekstoffe der Elektrotechnik
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Bismarckstr. 81 (BA)
47057 Duisburg
47057 Duisburg
Raum
BA 111
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Funktionen
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Akad. Direktor/in, Werkstoffe der Elektrotechnik
Aktuelle Veranstaltungen
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WiSe 2025
Vergangene Veranstaltungen (max. 10)
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SoSe 2025
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WiSe 2024
- Einführung in die Werkstoffe
- Auslandsforschungsprojekt
- Projekt Master NanoEngineering
- Einführung in die Nano- und Quantentechnologie
- Einführung in die Werkstoffe
- E3 - IngWi - Einführung in die Werkstoffe - Cr. 5-5
- Bachelor-Projekt Nano
- E3 - IngWi - Einführung in die Nano- und Quantentechnologie - Cr. 4-4
Die folgenden Publikationen sind in der Online-Universitätsbibliographie der Universität Duisburg-Essen verzeichnet. Weitere Informationen finden Sie gegebenenfalls auch auf den persönlichen Webseiten der Person.
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Band structure alignment in transfer-free MOCVD grown 2D-TMDC heterostructures revealed by ambient KPFMIn: APL Materials, Jg. 13, 2025, Nr. 4, 041112DOI, Online Volltext (Open Access)
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DFT-Assisted Approach to Low-Temperature Graphene Growth on SapphireIn: Small, Jg. 21, 2025, Nr. 44, e07332DOI (Open Access)
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Self-Powered Photodetectors Based on Scalable MOCVD-Grown WS₂-MoS₂ HeterostructuresIn: ACS Photonics, Jg. 11, 2024, Nr. 16, S. 2228 – 2235
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Surface Degradation of Mg₂X-Based Composites at Room Temperature : Assessing Grain Boundary and Bulk Diffusion Using Atomic Force Microscopy and Scanning Electron MicroscopyIn: ACS Applied Materials & Interfaces, Jg. 16, 2024, Nr. 36, S. 48619 – 48628DOI (Open Access)
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Graphene as a Transparent Conductive Electrode in GaN-Based LEDsIn: Materials, Jg. 15, 2022, Nr. 6, 2203DOI (Open Access)
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Role of Surface Adsorbates on the Photoresponse of (MO)CVD-Grown Graphene–MoS2 Heterostructure PhotodetectorsIn: ACS Applied Materials & Interfaces, Jg. 14, 2022, Nr. 30, S. 35184 – 35193
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Transfer-free, scalable photodetectors based on MOCVD-grown 2D-heterostructuresIn: 2D Materials, Jg. 8, 2021, Nr. 4, 045015DOI (Open Access)
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Direct growth of graphene on GaN via plasma-enhanced chemical vapor deposition under N₂ atmosphereIn: 2D Materials, Jg. 7, 2020, Nr. 3, 035019DOI (Open Access)
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Direct growth of graphene on Ge(100) and Ge(110) via thermal and plasma enhanced CVDIn: Scientific Reports, Jg. 10, 2020, Nr. 1, S. 12938DOI (Open Access)
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Graphene growth through a recrystallization process in plasma enhanced chemical vapor depositionIn: Nanotechnology, Jg. 29, 2018, Nr. 45, S. 455603
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Influence of atmospheric species on the electrical properties of functionalized graphene sheetsIn: RSC Advances, Jg. 8, 2018, Nr. 73, S. 42073 – 42079DOI, Online Volltext (Open Access)
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Low Resistive Edge Contacts to CVD-Grown Graphene Using a CMOS Compatible MetalIn: Annalen der Physik, Jg. 529, 2017, Nr. 11, Special Issue: Science and Technology of Graphene, 1600410DOI, Online Volltext (Open Access)
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Relation between growth rate and structure of graphene grown in a 4″ showerhead chemical vapor deposition reactorIn: Nanotechnology, Jg. 28, 2017, Nr. 18, S. 185601
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On the origin of contact resistances in graphene devices fabricated by optical lithographyIn: Applied Physics A: Materials Science and Processing, Jg. 122, 2016, Nr. 2, S. 58
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Implementation of graphene multilayer electrodes in quantum dot light-emitting devicesIn: Applied Physics A: Materials Science and Processing, Jg. 120, 2015, Nr. 3, S. 1197 – 1203DOI (Open Access)
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The effect of degree of reduction on the electrical properties of functionalized graphene sheetsIn: Applied Physics Letters (APL), Jg. 102, 2013, Nr. 2, 023114
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Local voltage drop in a single functionalized graphene sheet characterized by kelvin probe force microscopyIn: Nano Letters, Jg. 11, 2011, Nr. 9, S. 3543 – 3549
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Spatially resolved photoelectric performance of axial GaAs nanowire pn-diodesIn: Nano Research, Jg. 4, 2011, Nr. 10, S. 987 – 995
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Material and doping transitions in single GaAs-based nanowires probed by Kelvin probe force microscopyIn: Nanotechnology, Jg. 20, 2009, Nr. 38, S. 385702
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Electrical investigation of V-defects in GaN using Kelvin probe and conductive atomic force microscopyIn: Applied Physics Letters (APL), Jg. 93, 2008, Nr. 2, S. 022107
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Microscopic investigation of InGaN/GaN heterostructure laser diode degradation using Kelvin probe force microscopyIn: Journal of Physics D: Applied Physics, Jg. 41, 2008, Nr. 13, S. 135115
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Circuit internal signal measurements with a needle sensorIn: Microelectronics Reliability, Jg. Vol. 45, 2005, Nr. 9-11, S. 1505 – 1508
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Contactless current measurements using a needle sensorIn: Ultramicroscopy, Jg. Vol. 105, 2005, Nr. 1-4, S. 228 – 232
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High AC-voltage sensitivity of a quartz needle sensor used in noncontact scanning force microscopyIn: Applied Physics Letters, Jg. Vol. 87, 2005, Nr. 21, S. 214104
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A new technique for contactless current contrast imaging of high frequency signalsIn: Microelectonics Reliability, Jg. Vol. 43, 2003, Nr. 9-11, S. 1633 – 1638
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Electric force microscopy testing of digital voltages using the heterodyne mixing techniqueIn: Journal of Physics D: Applied Physics, Jg. 36, 2003, Nr. 6, S. 748 – 752
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Contactless current and voltage measurements in integrated circuits via a needle sensorIn: Microelectronics Reliability, Jg. Vol. 42, 2002, Nr. 9-11, S. 1695 – 1700
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Simultaneous IC-internal voltage and current measurements via a multi lever Scanning Force MicroscopeIn: Microelectronics Reliability, Jg. Vol. 42, 2002, Nr. 9-11, S. 1759 – 1762
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Cross-talk in electric force microscopy testing of parallel sub-micrometer conducting linesIn: Microelectronics Reliability, Jg. Vol. 40, 2000, Nr. 8-10, S. 1401 – 1406
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Voltage-influence of biased interconnection line on integrated circuit-internal current contrast measurements via magnetic force microscopyIn: Microelectronics Reliability, Jg. Vol. 40, 2000, Nr. 8-10, S. 1389 – 1394
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A new bifunctional topography and current probe for scanning force microscopy testing of integrated circuitsIn: Microelectronics Reliability, Jg. Vol. 39, 1999, Nr. 6-7, S. 975 – 980
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Quantitative high frequency-electric force microscope testing of monolithic microwave integrated circuits at 20 GHzIn: Microelectronics Relability, Jg. Vol. 39, 1999, Nr. 6-7, S. 951 – 956
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Voltage contrast measurements on sub-micrometer structures with an electric force microscope based test systemIn: Microelectronics Reliability, Jg. Vol. 39, 1999, Nr. 6-7, S. 969 – 974
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Characterization of a MMIC by direct and indirect electro-optic sampling and by network analyzer measurementsIn: Microelectronic Engineering, Jg. 24, 1994, Nr. 1-4, S. 377 – 384
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Experimental characterization of the perturbations of microwave devices by the electro-optic probe tipIn: Microelectronic Engineering, Jg. 24, 1994, Nr. 1-4, S. 123 – 130
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Two-dimensional field mapping in coplanar MMIC-components using direct electro-optic probingIn: Microelectronic Engineering, Jg. 24, 1994, Nr. 1-4, S. 385 – 392
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Body Motion detection using epidermal electronic graphene patchesIn: Biomedical engineering = Biomedizinische Technik. Berlin; Berlin1: de Gruyter, Jg. 68, 2023, Nr. s1: 57th Annual Meeting of the German Society of Biomedical Engineering 26 – 28 September 2023, Duisburg, including: The Artificial Vision Symposium – The International Symposium on Visual Prosthetics, S. 1 – 261
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Material and doping contrast in III/V nanowires probed by Kelvin probe force microscopyIn: Nanoparticles from the gasphase: formation, structure, properties / Lorke, Axel; Winterer, Markus; Schmechel, Roland; Schulz, Christof (Hrsg.). Heidelberg: Springer, 2012, S. 185 – 206
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Potential distribution in functionalized graphene devices probed by Kelvin probe force microscopyIn: Physics of Semiconductors / Ihm, Jisoon; Cheong, Hyeonsik; 30th International Conference on the Physics of Semiconductors, 25-30 Jul 2010. Seoul, Korea. Melville, NY: AIP, 2011, S. 819 – 820
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A nanoparticle-coated nanocrystal-gate for an INP-based heterostructure field-effect transistorIn: 16th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM`04; Kagoshima, Japan; 31 May - 4 June 2004. Piscataway: IEEE, 2004, S. 435 – 438
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Contactless probing of high-frequency electrical signals with scanning probe microscopyIn: 2002 IEEE MTT-S International Microwave Symposium digest : June 2 - 7, 2002, Washington (Vol. 3) / Hamilton, Rob (Hrsg.). Piscataway, NJ: IEEE, 2002, S. 1493 – 1496
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Design and characterization of integrated probes for millimeter wave applications in scanning probe microscopyIn: Proceedings of the 1996 IEEE MTT-S International Microwave Symposium Digest / San Franscisco, USA; 17 - 21 June 1996. Piscataway: IEEE, 1996, S. 1529 – 1532
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Two-dimensional mapping of amplitude and phase of microwave fields inside a MMIC using the direct electro-optic sampling techniqueIn: Proceedings of the IEEE MTT-S International Microwave Symposium Digest / San Diego, USA; 23-27 May 1994. Piscataway: IEEE, Jg. 3, 1994, S. 1597 – 1600
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Two-dimensional direct electra-optic field mapping in a monolithic integrated GaAs amplifierIn: 23rd European Microwave Conference / EuMA 1993; Madrid, Spain; 6 - 10 September 1993. Piscataway: IEEE, 1993, S. 497 – 499
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Two-dimensional direct electro-optic field mapping in a monolithic integrated GaAs amplifierIn: Proceedings of the 23rd European Microwave Conference (EuMC'93) / EuMC'93, 10. September 1993, Madrid, Spain. Madrid, 1993, S. 497 – 499
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First steps towards a chipless, passive THz-based epidermal electronics conceptIn: 2025 International Conference on Mobile and Miniaturized Terahertz Systems (ICMMTS) / 2025 International Conference on Mobile and Miniaturized Terahertz Systems (ICMMTS), 23-26 February 2025, Dubai, United Arab Emirates / International Conference on Mobile and Miniaturized Terahertz Systems (Hrsg.). Piscataway: Institute of Electrical and Electronics Engineers, 2025, S. 301 – 303
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Graphene growth on conductive and nonconductive substrates via plasma-enhanced CVD
Materials Chain Workshop on 2D- and Hybrid Materials, 05.07.2019, Bochum, Germany,2019 -
Graphene growth at low temperatures via chemical vapor deposition
CENIDE-Jahresfeier 2017, 15.11.2017, Duisburg,2017 -
Plasma-enhanced chemical vapor deposition in a 4-inch reactor for the growth of graphene on metallic and non-metallic substrates
Graphene Study: Hjortviken Konferens AB, 25.-30.06.2017, Hindås, Sweden,2017 -
Plasma-enhanced chemical vapor deposition in a 4-inch reactor for the growth of graphene on metallic and non-metallic substrates
CENIDE-Jahresfeier 2017, 15.11.2017, Duisburg,2017 -
Direct PE-CVD growth of graphene on GaN under N2 atmosphere
9th Graphene 2019, 25.-28.06.2019, Rome, Italy,2019 -
Direct PECVD growth of graphene on GaN under N2 atmosphere in a 4" cold-wall CVD reactor
Graphene & 2DM Singapore Summit 2019, 11-12 November 2019, Singapore,Singapur, 2019 -
CVD growth of graphene at reduced temperatures
The Second WIN-Cenide Reciprocal Workshop, 18.-21.6.2018, Waterloo, Canada,2018 -
Defect-free graphene growth at low temperatures via plasma enhanced chemical vapor deposition
MRS Fall Meeting & Exhibit, 26.11.-01.12.2018, Boston, Ma, USA,2018 -
Plasma enhanced CVD growth of graphene on Cu and Ge
AiMES 2018 Meeting : Americas International Meeting on Electrochemistry and Solid State Science, 30.9.-4.10.2018, Cancun, Mexico,2018 -
CVD growth of graphene at reduced temperatures
MiFun: Microstructural Functionality at the Nanoscale, 04.-06.10.2017, Duisburg,2017 -
CVD growth of graphene at reduced temperatures
12th Graphene Week 2017, 24.-29.09.2017, Athens, Greece,2017 -
Axial doping profile in VLS grown GaAs:Zn nanowires
13th European Workshop on Metalorganic Vapor Phase Epitaxy, 7. – 10. Juni 2009, Ulm, Germany,2009 -
Electro-optical testing of MMICs
24th General Assembly, August 25-September 2, 1993, Kyoto, Japan, 1993,Kyoto, 1993