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Fakultät für Ingenieurwissenschaften/Lehrstuhl Wekstoffe der Elektrotechnik
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Bismarckstr. 81 (BA)
47057 Duisburg
47057 Duisburg
Raum
BA 111
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Funktionen
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Akad. Direktor/in, Werkstoffe der Elektrotechnik
Aktuelle Veranstaltungen
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2024 WS
- Projekt Master NanoEngineering
- Einführung in die Werkstoffe
- Auslandsforschungsprojekt
- Einführung in die Werkstoffe
- Einführung in die Nano- und Quantentechnologie
- Bachelor-Projekt Nano
- E3 - IngWi - Einführung in die Werkstoffe - Cr. 5-5
- E3 - IngWi - Einführung in die Nano- und Quantentechnologie - Cr. 4-4
- Moderne Methoden der Bauelement- und Schaltungsanalytik
Vergangene Veranstaltungen (max. 10)
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2024 SS
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2023 WS
Die folgenden Publikationen sind in der Online-Universitätsbibliographie der Universität Duisburg-Essen verzeichnet. Weitere Informationen finden Sie gegebenenfalls auch auf den persönlichen Webseiten der Person.
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Graphene-Enhanced UV-C LEDsIn: Advanced Materials Jg. 36 (2024) Nr. 32, 2313037Online Volltext: dx.doi.org/ (Open Access)
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Self-Powered Photodetectors Based on Scalable MOCVD-Grown WS₂-MoS₂ HeterostructuresIn: ACS Photonics Jg. 11 (2024) Nr. 16, S. 2228 - 2235Online Volltext: dx.doi.org/
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Surface Degradation of Mg₂X-Based Composites at Room Temperature : Assessing Grain Boundary and Bulk Diffusion Using Atomic Force Microscopy and Scanning Electron MicroscopyIn: ACS Applied Materials & Interfaces (2024) in pressOnline Volltext: dx.doi.org/ (Open Access)
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Graphene as a Transparent Conductive Electrode in GaN-Based LEDsIn: Materials Jg. 15 (2022) Nr. 6, 2203Online Volltext: dx.doi.org/ (Open Access)
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Role of Surface Adsorbates on the Photoresponse of (MO)CVD-Grown Graphene–MoS2 Heterostructure PhotodetectorsIn: ACS Applied Materials & Interfaces Jg. 14 (2022) Nr. 30, S. 35184 - 35193Online Volltext: dx.doi.org/
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Transfer-free, scalable photodetectors based on MOCVD-grown 2D-heterostructuresIn: 2D Materials Jg. 8 (2021) Nr. 4, 045015Online Volltext: dx.doi.org/ (Open Access)
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Direct growth of graphene on GaN via plasma-enhanced chemical vapor deposition under N₂ atmosphereIn: 2D Materials Jg. 7 (2020) Nr. 3, 035019Online Volltext: dx.doi.org/ (Open Access)
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Direct growth of graphene on Ge(100) and Ge(110) via thermal and plasma enhanced CVDIn: Scientific Reports Jg. 10 (2020) Nr. 1, S. 12938Online Volltext: dx.doi.org/ (Open Access)
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Graphene growth through a recrystallization process in plasma enhanced chemical vapor depositionIn: Nanotechnology Jg. 29 (2018) Nr. 45, S. 455603Online Volltext: dx.doi.org/
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Influence of atmospheric species on the electrical properties of functionalized graphene sheetsIn: RSC Advances Jg. 8 (2018) Nr. 73, S. 42073 - 42079Online Volltext: dx.doi.org/ Online Volltext (Open Access)
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Low Resistive Edge Contacts to CVD-Grown Graphene Using a CMOS Compatible MetalIn: Annalen der Physik Jg. 529 (2017) Nr. 11, Special Issue: Science and Technology of Graphene, 1600410Online Volltext: dx.doi.org/ (Open Access)
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Relation between growth rate and structure of graphene grown in a 4″ showerhead chemical vapor deposition reactorIn: Nanotechnology Jg. 28 (2017) Nr. 18, S. 185601Online Volltext: dx.doi.org/
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On the origin of contact resistances in graphene devices fabricated by optical lithographyIn: Applied Physics A: Materials Science and Processing Jg. 122 (2016) Nr. 2, S. 58Online Volltext: dx.doi.org/
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Implementation of graphene multilayer electrodes in quantum dot light-emitting devicesIn: Applied Physics A: Materials Science and Processing Jg. 120 (2015) Nr. 3, S. 1197 - 1203Online Volltext: dx.doi.org/ (Open Access)
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The effect of degree of reduction on the electrical properties of functionalized graphene sheetsIn: Applied Physics Letters (APL) Jg. 102 (2013) Nr. 2, 023114Online Volltext: dx.doi.org/
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Local voltage drop in a single functionalized graphene sheet characterized by kelvin probe force microscopyIn: Nano Letters Jg. 11 (2011) Nr. 9, S. 3543 - 3549Online Volltext: dx.doi.org/
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Spatially resolved photoelectric performance of axial GaAs nanowire pn-diodesIn: Nano Research Jg. 4 (2011) Nr. 10, S. 987 - 995Online Volltext: dx.doi.org/
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Material and doping transitions in single GaAs-based nanowires probed by Kelvin probe force microscopyIn: Nanotechnology Jg. 20 (2009) Nr. 38, S. 385702Online Volltext: dx.doi.org/
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Electrical investigation of V-defects in GaN using Kelvin probe and conductive atomic force microscopyIn: Applied Physics Letters (APL) Jg. 93 (2008) Nr. 2, S. 022107Online Volltext: dx.doi.org/
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Microscopic investigation of InGaN/GaN heterostructure laser diode degradation using Kelvin probe force microscopyIn: Journal of Physics D: Applied Physics Jg. 41 (2008) Nr. 13, S. 135115Online Volltext: dx.doi.org/
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Circuit internal signal measurements with a needle sensorIn: Microelectronics Reliability Jg. Vol. 45 (2005) Nr. 9-11, S. 1505 - 1508
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Contactless current measurements using a needle sensorIn: Ultramicroscopy Jg. Vol. 105 (2005) Nr. 1-4, S. 228 - 232
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High AC-voltage sensitivity of a quartz needle sensor used in noncontact scanning force microscopyIn: Applied Physics Letters Jg. Vol. 87 (2005) Nr. 21, S. 214104
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A new technique for contactless current contrast imaging of high frequency signalsIn: Microelectonics Reliability Jg. Vol. 43 (2003) Nr. 9-11, S. 1633 - 1638
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Electric force microscopy testing of digital voltages using the heterodyne mixing techniqueIn: Journal of Physics D: Applied Physics Jg. 36 (2003) Nr. 6, S. 748 - 752
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Contactless current and voltage measurements in integrated circuits via a needle sensorIn: Microelectronics Reliability Jg. Vol. 42 (2002) Nr. 9-11, S. 1695 - 1700
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Simultaneous IC-internal voltage and current measurements via a multi lever Scanning Force MicroscopeIn: Microelectronics Reliability Jg. Vol. 42 (2002) Nr. 9-11, S. 1759 - 1762
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Cross-talk in electric force microscopy testing of parallel sub-micrometer conducting linesIn: Microelectronics Reliability Jg. Vol. 40 (2000) Nr. 8-10, S. 1401 - 1406
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Voltage-influence of biased interconnection line on integrated circuit-internal current contrast measurements via magnetic force microscopyIn: Microelectronics Reliability Jg. Vol. 40 (2000) Nr. 8-10, S. 1389 - 1394
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A new bifunctional topography and current probe for scanning force microscopy testing of integrated circuitsIn: Microelectronics Reliability Jg. Vol. 39 (1999) Nr. 6-7, S. 975 - 980
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Quantitative high frequency-electric force microscope testing of monolithic microwave integrated circuits at 20 GHzIn: Microelectronics Relability Jg. Vol. 39 (1999) Nr. 6-7, S. 951 - 956
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Voltage contrast measurements on sub-micrometer structures with an electric force microscope based test systemIn: Microelectronics Reliability Jg. Vol. 39 (1999) Nr. 6-7, S. 969 - 974
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Characterization of a MMIC by direct and indirect electro-optic sampling and by network analyzer measurementsIn: Microelectronic Engineering Jg. 24 (1994) Nr. 1-4, S. 377 - 384Online Volltext: dx.doi.org/
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Experimental characterization of the perturbations of microwave devices by the electro-optic probe tipIn: Microelectronic Engineering Jg. 24 (1994) Nr. 1-4, S. 123 - 130Online Volltext: dx.doi.org/
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Two-dimensional field mapping in coplanar MMIC-components using direct electro-optic probingIn: Microelectronic Engineering Jg. 24 (1994) Nr. 1-4, S. 385 - 392Online Volltext: dx.doi.org/
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Body Motion detection using epidermal electronic graphene patches
German Society of Biomedical Engineering (BMT Annual Meeting 2023): 26.09 - 28.09.2023, Duisburg, Germany,In: Biomedical engineering = Biomedizinische Technik Jg. 68 (2023) Nr. Suppl. 1, S. 1 - 261Online Volltext: dx.doi.org/; Online Volltext: dx.doi.org/ (Open Access) -
Material and doping contrast in III/V nanowires probed by Kelvin probe force microscopyIn: Nanoparticles from the gasphase: formation, structure, properties / Lorke, Axel; Winterer, Markus; Schmechel, Roland; Schulz, Christof (Hrsg.) 2012, S. 185 - 206Online Volltext: dx.doi.org/
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Potential distribution in functionalized graphene devices probed by Kelvin probe force microscopyIn: Physics of Semiconductors / Ihm, Jisoon; Cheong, Hyeonsik; 30th International Conference on the Physics of Semiconductors, 25-30 Jul 2010. Seoul, Korea 2011, S. 819 - 820Online Volltext: dx.doi.org/
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A nanoparticle-coated nanocrystal-gate for an INP-based heterostructure field-effect transistorIn: 16th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM`04; Kagoshima, Japan; 31 May - 4 June 2004 2004, S. 435 - 438Online Volltext: dx.doi.org/
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Contactless probing of high-frequency electrical signals with scanning probe microscopyIn: 2002 IEEE MTT-S International Microwave Symposium digest : June 2 - 7, 2002, Washington (Vol. 3) / Hamilton, Rob (Hrsg.) 2002, S. 1493 - 1496
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Design and characterization of integrated probes for millimeter wave applications in scanning probe microscopyIn: Proceedings of the 1996 IEEE MTT-S International Microwave Symposium Digest / San Franscisco, USA; 17 - 21 June 1996 1996, S. 1529 - 1532Online Volltext: dx.doi.org/
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Two-dimensional mapping of amplitude and phase of microwave fields inside a MMIC using the direct electro-optic sampling techniqueIn: Proceedings of the IEEE MTT-S International Microwave Symposium Digest / San Diego, USA; 23-27 May 1994 Jg. 3 1994, S. 1597 - 1600Online Volltext: dx.doi.org/
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Two-dimensional direct electra-optic field mapping in a monolithic integrated GaAs amplifierIn: 23rd European Microwave Conference / EuMA 1993; Madrid, Spain; 6 - 10 September 1993 1993, S. 497 - 499Online Volltext: dx.doi.org/
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Two-dimensional direct electro-optic field mapping in a monolithic integrated GaAs amplifierIn: Proceedings of the 23rd European Microwave Conference (EuMC'93) / EuMC'93, 10. September 1993, Madrid, Spain 1993, S. 497 - 499
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Graphene growth on conductive and nonconductive substrates via plasma-enhanced CVD
Materials Chain Workshop on 2D- and Hybrid Materials, 05.07.2019, Bochum, Germany,(2019) -
Graphene growth at low temperatures via chemical vapor deposition
CENIDE-Jahresfeier 2017, 15.11.2017, Duisburg,(2017) -
Plasma-enhanced chemical vapor deposition in a 4-inch reactor for the growth of graphene on metallic and non-metallic substrates
CENIDE-Jahresfeier 2017, 15.11.2017, Duisburg,(2017) -
Plasma-enhanced chemical vapor deposition in a 4-inch reactor for the growth of graphene on metallic and non-metallic substrates
Graphene Study: Hjortviken Konferens AB, 25.-30.06.2017, Hindås, Sweden,(2017) -
Direct PE-CVD growth of graphene on GaN under N2 atmosphere
9th Graphene 2019, 25.-28.06.2019, Rome, Italy,(2019) -
Direct PECVD growth of graphene on GaN under N2 atmosphere in a 4" cold-wall CVD reactor
Graphene & 2DM Singapore Summit 2019, 11-12 November 2019, Singapore,Singapur (2019) -
CVD growth of graphene at reduced temperatures
The Second WIN-Cenide Reciprocal Workshop, 18.-21.6.2018, Waterloo, Canada,(2018) -
Defect-free graphene growth at low temperatures via plasma enhanced chemical vapor deposition
MRS Fall Meeting & Exhibit, 26.11.-01.12.2018, Boston, Ma, USA,(2018) -
Plasma enhanced CVD growth of graphene on Cu and Ge
AiMES 2018 Meeting : Americas International Meeting on Electrochemistry and Solid State Science, 30.9.-4.10.2018, Cancun, Mexico,(2018) -
CVD growth of graphene at reduced temperatures
MiFun: Microstructural Functionality at the Nanoscale, 04.-06.10.2017, Duisburg,(2017) -
CVD growth of graphene at reduced temperatures
12th Graphene Week 2017, 24.-29.09.2017, Athens, Greece,(2017) -
Axial doping profile in VLS grown GaAs:Zn nanowires
13th European Workshop on Metalorganic Vapor Phase Epitaxy, 7. – 10. Juni 2009, Ulm, Germany,(2009) -
Electro-optical testing of MMICs
24th General Assembly, August 25-September 2, 1993, Kyoto, Japan, 1993,Kyoto (1993)