Equipment
Willkommen in unseren Laboren
Wir bieten modernste Anlagen für die Herstellung, Verarbeitung und fortgeschrittene Charakterisierung von einkristallinen und polykristallinen Materialien sowie gepressten Nanomaterialien. Bitte zögern Sie nicht, uns zu kontaktieren.
Synthese
Crystal Growth Furnaces

Methods:
- Bridgman
- Floating Zone
- Micro-pulling-down
Gloveboxes / Powder-Pressing
tba.
Kontakt
Processing
Cutting Machine

- wet cutting, automated
- max. sample size of Ø75 mm
Diamond Wire Saw
- cutting variety of materials such as glass, hard rubber, ceramics, plastics, metals, and quartz
- 0.1 mm to 0.35mm cutting gap. Cutting width with 0.01 mm accuracy
Grinding and Polishing
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SiC grinding paper up to 4000#
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diamand suspension and SiO2 treatment for ultra-fine polished surfaces
Autoclave
- Suitable for hydrogen loading and other reactive gases
- High-pressure, high-temperature reactor (500 bar / 500 °C)
- 200 ml vessel, electric heating with water cooling
Minilamp Annealer
- thermal processing device to rapidly heat and anneal thin films, wafers and small samples using infrared lamps
- high-vacuum or gas-flow atmosphere
- room temperature up to 1200 °C
- eg. dopant activity, crystal defect repair and surface modification
Kontakt
Charakterisierung
Dynacool - PPMS

Measurement options: Electrical transport (resistance, magnetoresistance, Hall effect); Thermal transport (thermal conductivity, Seebeck effect)
- temperature range: 1.8 K - 400 K
- magnetic field range: 9 T
- horizontal rotator option
- high vacuum chamber (below 10-4 Torr)
- bulk, thin films, nanogranular materials and others
Differential Scanning Calorimetry (DSC)

- investigation of thermal properties like phase transistions or melting points
- determination of specific heat capacity
- from -180 °C to 500 °C
- heating/cooling rates: 0.001 to 200 K/min
ZEM-3

- simultaneous measurement of Seebeck coefficient and electrical resistivity (4-probe)
- 50 °C to 1000 °C
- low-pressure helium atmosphere
- diameter or side length 2 - 4 mm, length 5 - 22 mm
- bulk and thin film
Laser-Flash-Analysis (LFA)
- Measurement of thermal diffusivity and thermal conductivity
- Temperature range: -125 °C to 1100 °C, various atmospheres
- Suitable for solids, coatings and thin films
Usage in cooperation with Prof. Roland Schmechel
Potentiostat

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electrochemical Analysis
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output voltage ± 20 V, maximum current ± 400 mA
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with second sample holder; constructed for smaller sample diameters from 6 to 16 mm