Willkommen in unseren Laboren

Wir bieten modernste Anlagen für die Herstellung, Verarbeitung und fortgeschrittene Charakterisierung von einkristallinen und polykristallinen Materialien sowie gepressten Nanomaterialien. Bitte zögern Sie nicht, uns zu kontaktieren.

Synthese

Crystal Growth Furnaces


Methods:​

  • Bridgman
  • Floating Zone
  • Micro-pulling-down

Gloveboxes / Powder-Pressing

tba.

 

Kontakt

alexander.kunzmann@uni-due.de

Processing

Cutting Machine



 

  • wet cutting, automated
  • max. sample size of Ø75 mm

Diamond Wire Saw

  • cutting variety of materials such as glass, hard rubber, ceramics, plastics, metals, and quartz
  • 0.1 mm to 0.35mm cutting gap. Cutting width with 0.01 mm accuracy

Grinding and Polishing

  • SiC grinding paper up to 4000#

  • diamand suspension and SiO2 treatment for ultra-fine polished surfaces

Autoclave

  • Suitable for hydrogen loading and other reactive gases
  • High-pressure, high-temperature reactor (500 bar / 500 °C)
  • 200 ml vessel, electric heating with water cooling

Minilamp Annealer

  • thermal processing device to rapidly heat and anneal thin films, wafers and small samples using infrared lamps
  • high-vacuum or gas-flow atmosphere
  • room temperature up to 1200 °C
  • eg. dopant activity, crystal defect repair and surface modification

Kontakt

klara.luenser@uni-due.de

Charakterisierung

Dynacool - PPMS



 

Measurement options: Electrical transport (resistance, magnetoresistance, Hall effect); Thermal transport (thermal conductivity, Seebeck effect)

  • temperature range: 1.8 K - 400 K
  • magnetic field range: 9 T
  • horizontal rotator option
  • high vacuum chamber (below 10-4 Torr)
  • bulk, thin films, nanogranular materials and others

Differential Scanning Calorimetry (DSC)

  • investigation of thermal properties like phase transistions or melting points
  • determination of specific heat capacity
  • from -180 °C to 500 °C
  • heating/cooling rates: 0.001 to 200 K/min

ZEM-3

  • simultaneous measurement of Seebeck coefficient and electrical resistivity (4-probe)
  • 50 °C to 1000 °C
  • low-pressure helium atmosphere
  • diameter or side length 2 - 4 mm, length 5 - 22 mm
  • bulk and thin film

Laser-Flash-Analysis (LFA)

  • Measurement of thermal diffusivity and thermal conductivity
  • Temperature range: -125 °C to 1100 °C, various atmospheres
  • Suitable for solids, coatings and thin films

Usage in cooperation with Prof. Roland Schmechel 

Potentiostat


 

  • electrochemical Analysis

  • output voltage ± 20 V, maximum current ± 400 mA

  • with second sample holder; constructed for smaller sample diameters from 6 to 16 mm

 

Kontakt

sepideh.izadi@uni-due.de