Im Rahmen der Kooperation mit der Universität Bremen entstandene Publikationen


    2013


  1. Al-induced faceting of Si(113),
    C. Klein, I. Heidmann, T. Nabbefeld, M. Speckmann, T. Schmidt, F.-J. Meyer zu Heringdorf, J. Falta and M. Horn-von Hoegen,
    Surface Science 618 (2013) pp. 109-114
    DOI


  2. 2006


  3. Less strain energy despite fewer misfit dislocations: The impact of ordering,
    Th. Schmidt, R. Kröger, J.I. Flege, T. Clausen, J. Falta, A. Janzen, P. Zahl, P. Kury, M. Kammler and M. Horn-von Hoegen,
    Physical Review Letters 96 (2006) p. 66101
    DOI


  4. 2005


  5. Surfactant-mediated epitaxy of Ge on Si(111): beyond the surface,
    Th. Schmidt, R. Kröger, T. Clausen, J. Falta, A. Janzen, M. Kammler, P. Kury, P. Zahl and M. Horn-von Hoegen,
    Applied Physics Letters 86 (2005) p. 111910
    DOI


  6. 2001


  7. Characterization of Ge deltadoped Si(111) with RBS-channeling,
    J. Yuhara, K. Morita, J. Falta, B.H. Müller and M. Horn-von Hoegen,
    Surface & Interface Analysis 31 (2001) pp. 754-760
    DOI


  8. 1999


  9. 3-dim. Reciprocal space mapping of a quasi periodic misfit dislocation array,
    M. Kammler, T. Schmidt, P. Zahl, P. Kury, J. Falta, and M. Horn-von Hoegen,
    HASYLAB/DESY Annual Report (1999) p. 0
    Link


  10. 1998


  11. High concentration Bi delta-doping layers on Si(001),
    J. Falta, O. Mielmann, T. Schmidt, A. Hille, C. Sanchez-Hanke, P. Sonntag, G. Materlik, F. Meyer zu Heringdorf, M. Kammler, M. Horn-von Hoegen and M. Copel,
    Applied Surface Science 123/124 (1998) pp. 538-541
    DOI

  12. X-ray characterization of buried delta layers,
    J. Falta, D. Bahr, G. Materlik, B.H. Müller and M. Horn-von Hoegen,
    Surface Review and Letters 5 (1998) pp. 145-149
    DOI

  13. Strain Field of Periodic Dislocation Networks of SME grown Ge on Si(111),
    M. Kammler, J. Falta, P. Kury, B. H. Müller, T. Schmidt, and M. Horn-von Hoegen,
    HASYLAB/DESY Annual Report (1998) p. 0
    Link


  14. 1996


  15. Stress reduction and interface quality of buried Sb delta-layers on Si(001),
    J. Falta, D. Bahr, A. Hille, G. Materlik, M. Kammler and M. Horn-von Hoegen,
    Applied Physics Letters 69 (1996) pp. 2906-2908
    DOI

  16. Towards perfect Ge delta layers on Si(001),
    J. Falta, D. Bahr, G. Materlik, B.H. Müller and M. Horn-von Hoegen,
    Applied Physics Letters 68 (1996) pp. 1394-1396
    DOI

  17. X-ray interface characterization of Ge delta layers on Si(001),
    D. Bahr, J. Falta, G. Materlik, B.H. Müller and M. Horn-von Hoegen,
    Physica B 221 (1996) pp. 96-100
    DOI


  18. 1995


  19. Interface roughening of Ge delta layers on Si(111),
    J. Falta, T. Gog, G. Materlik, B.H. Müller and M. Horn-von Hoegen,
    Physical Review B 51 (1995) p. 7598
    DOI

  20. Surfactants in Si(111) homoepitaxy,
    M. Horn-von Hoegen, J. Falta, M. Copel and R.M. Tromp,
    Applied Physics Letters 66 (1995) pp. 487-489
    DOI


  21. 1994


  22. Ge delta-Layers on Si(111) and Si(001) grown by MBE and SPE,
    J. Falta, T. Gog, G. Materlik, B.H. Müller and M. Horn-von Hoegen,
    MRS Proceedings 375 (1994) pp. 177-180
    DOI


  23. 1989


  24. The initial stages of growth of silicon on Si(111) by spot profile analysing low-energy electron diffraction,
    M. Horn-von Hoegen, J. Falta and M. Henzler,
    Thin Solid Films 183 (1989) pp. 213-220
    DOI

  25. SPA-LEED studies of defects in thin epitaxial NiSi2 layers on Si(111),
    J. Falta, M. Horn and M. Henzler,
    Applied Surface Science 41-42 (1989) pp. 230-235
    DOI