Al-induced faceting of Si(113), C. Klein, I. Heidmann, T. Nabbefeld, M. Speckmann, T. Schmidt, F.-J. Meyer zu Heringdorf, J. Falta and M. Horn-von Hoegen,
Surface Science 618 (2013) pp. 109-114 DOI
Less strain energy despite fewer misfit dislocations: The impact of ordering, Th. Schmidt, R. Kröger, J.I. Flege, T. Clausen, J. Falta, A. Janzen, P. Zahl, P. Kury, M. Kammler and M. Horn-von Hoegen,
Physical Review Letters 96 (2006) p. 66101 DOI
Surfactant-mediated epitaxy of Ge on Si(111): beyond the surface, Th. Schmidt, R. Kröger, T. Clausen, J. Falta, A. Janzen, M. Kammler, P. Kury, P. Zahl and M. Horn-von Hoegen,
Applied Physics Letters 86 (2005) p. 111910 DOI
Characterization of Ge deltadoped Si(111) with RBS-channeling, J. Yuhara, K. Morita, J. Falta, B.H. Müller and M. Horn-von Hoegen,
Surface & Interface Analysis 31 (2001) pp. 754-760 DOI
3-dim. Reciprocal space mapping of a quasi periodic misfit dislocation array, M. Kammler, T. Schmidt, P. Zahl, P. Kury, J. Falta, and M. Horn-von Hoegen,
HASYLAB/DESY Annual Report (1999) p. 0 Link
High concentration Bi delta-doping layers on Si(001), J. Falta, O. Mielmann, T. Schmidt, A. Hille, C. Sanchez-Hanke, P. Sonntag, G. Materlik, F. Meyer zu Heringdorf, M. Kammler, M. Horn-von Hoegen and M. Copel,
Applied Surface Science 123/124 (1998) pp. 538-541 DOI
X-ray characterization of buried delta layers, J. Falta, D. Bahr, G. Materlik, B.H. Müller and M. Horn-von Hoegen,
Surface Review and Letters 5 (1998) pp. 145-149 DOI
Strain Field of Periodic Dislocation Networks of SME grown Ge on Si(111), M. Kammler, J. Falta, P. Kury, B. H. Müller, T. Schmidt, and M. Horn-von Hoegen,
HASYLAB/DESY Annual Report (1998) p. 0 Link
Stress reduction and interface quality of buried Sb delta-layers on Si(001), J. Falta, D. Bahr, A. Hille, G. Materlik, M. Kammler and M. Horn-von Hoegen,
Applied Physics Letters 69 (1996) pp. 2906-2908 DOI
Towards perfect Ge delta layers on Si(001), J. Falta, D. Bahr, G. Materlik, B.H. Müller and M. Horn-von Hoegen,
Applied Physics Letters 68 (1996) pp. 1394-1396 DOI
X-ray interface characterization of Ge delta layers on Si(001), D. Bahr, J. Falta, G. Materlik, B.H. Müller and M. Horn-von Hoegen,
Physica B 221 (1996) pp. 96-100 DOI
Interface roughening of Ge delta layers on Si(111), J. Falta, T. Gog, G. Materlik, B.H. Müller and M. Horn-von Hoegen,
Physical Review B 51 (1995) p. 7598 DOI
Surfactants in Si(111) homoepitaxy, M. Horn-von Hoegen, J. Falta, M. Copel and R.M. Tromp,
Applied Physics Letters 66 (1995) pp. 487-489 DOI
Ge delta-Layers on Si(111) and Si(001) grown by MBE and SPE, J. Falta, T. Gog, G. Materlik, B.H. Müller and M. Horn-von Hoegen,
MRS Proceedings 375 (1994) pp. 177-180 DOI
The initial stages of growth of silicon on Si(111) by spot profile analysing low-energy electron diffraction, M. Horn-von Hoegen, J. Falta and M. Henzler,
Thin Solid Films 183 (1989) pp. 213-220 DOI
SPA-LEED studies of defects in thin epitaxial NiSi2 layers on Si(111), J. Falta, M. Horn and M. Henzler,
Applied Surface Science 41-42 (1989) pp. 230-235 DOI
