Im Rahmen der Kooperation mit der Leibniz Universität Hannover entstandene Publikationen


    2015


  1. Barrier-free subsurface incorporation of 3d metal atoms into Bi(111) films,
    C. Klein, N. J. Vollmers, U. Gerstmann, P. Zahl, D. Lükermann, G. Jnawali, H. Pfnür, C. Tegenkamp, P. Sutter, W. G. Schmidt, and M. Horn-von Hoegen,
    Physical Review B 91 (2015) p. 195441
    DOI


  2. 2013


  3. Effect of adsorbed magnetic and non-magnetic atoms on electronic transport through surfaces with strong spin-orbit coupling,
    D. Lükermann, S. Sologub, H. Pfnür, C. Klein, M. Horn-von Hoegen, and C. Tegenkamp,
    Materialwissenschaft und Werkstofftechnik 44 (2013) pp. 210-217
    DOI


  4. 2012


  5. Scattering at magnetic and nonmagnetic impurities on surfaces with strong spin-orbit coupling,
    D. Lükermann, S. Sologub, H. Pfnür, C. Klein, M. Horn-von Hoegen, and C. Tegenkamp,
    Physical Review B 86 (2012) p. 195432
    DOI


  6. 2011


  7. Lost in reciprocal space? Determination of scattering condition in spot profile analysis low energy electron diffraction,
    C. Klein, T. Nabbefeld, H. Hattab, D. Meyer, G. Jnawali, M. Kammler, F. Meyer zu Heringdorf, A. Golla-Franz, B.H Müller, Th. Schmidt, M. Henzler, and M. Horn-von Hoegen ,
    Rev. Sci. Instrum. 82 (2011) p. 35111
    DOI


  8. 2004


  9. Chopped sample heating for quantitative profile analysis of low energy electron diffraction spots at high temperatures,
    P. Kury, P. Zahl, M. Horn-von Hoegen, C. Voges, H. Frischat, H.-L. Günter, H. Pfnür and M. Henzler,
    Rev. Sci. Instrum. 75 (2004) p. 4911
    DOI


  10. 2002


  11. Step and kink correlations on vicinal Ge(100) surfaces investigated by electron diffraction,
    Ch. Tegenkamp, J. Wollschläger, H. Pfnür, F.-J. Meyer zu Heringdorf and M. Horn-von Hoegen,
    Physical Review B 65 (2002) p. 235316
    DOI


  12. 2000


  13. Hydrogen induced domain-wall structure on Si(113),
    F.-J. Meyer zu Heringdorf, H. Goldbach, H.L. Guenter, M. Horn-von Hoegen, V. Dorna, U. Koehler and M. Henzler,
    Surface Science 458 (2000) pp. 147-154
    DOI


  14. 1999


  15. Ag on Si surfaces: from insulator to metal,
    M. Horn-von Hoegen, M. Henzler and G. Meyer,
    Morphological Organization in Epitaxial Growth, Ed. Z. Zhang and M.G. Lagally, World Scientific (1999) pp. 403-420
    Link


  16. 1998


  17. Surface morphology changes due to adsorbates and due to electron bombardement,
    M. Henzler, D. Thielking, M. Horn-von Hoegen and V. Zielasek,
    Physica A 261 (1998) pp. 1-12
    DOI

  18. Intensity fluctuations from surfaces and the assessment of time constants,
    M. I. Larsson, M. C. Tringides, H. Pfnür, H. Frischat, K. Budde, M. Kammler, and M. Henzler,
    Surface Science 411 (1998) pp. 789-793
    DOI


  19. 1997


  20. Ag-mediated step-bunching instability on vicinal Si(100),
    S. Fölsch, G. Meyer, D. Winau, K.H. Rieder, M. Horn-von Hoegen, T. Schmidt and M. Henzler,
    Surface Science 394 (1997) pp. 60-70
    DOI


  21. 1995


  22. Ag-induced multi-step formation on Si(001),
    S. Fölsch, G. Meyer, D. Winau, K.H. Rieder, M. Horn-von Hoegen, T. Schmidt and M. Henzler,
    Applied Physics Letters 67 (1995) pp. 2185-2187
    DOI

  23. Grundschritte der Epitaxie: Sichtbarmachung mit Elektronenbeugung und Rastertunnelmikroskopie,
    M. Henzler, M. Horn-von Hoegen and U. Köhler,
    Nova Acta Leopoldina NF 73 (1995) pp. 31-51


  24. Lattice accomodation of Si(001) and Ag(111),
    M. Horn-von Hoegen, T. Schmidt, M. Henzler, G. Meyer, D. Winau and K.H. Rieder,
    Physical Review B 52 (1995) pp. 10764-10767
    DOI


  25. 1994


  26. Lattice matching periodic interfacial dislocation network in surfactant-mediated growth of Ge on Si(111),
    M. Horn-von Hoegen and M. Henzler,
    Phys. Stat. Solidi (a) 146 (1994) pp. 337-352
    DOI

  27. Surfactant-stabilized strained Ge cones on Si(100),
    M. Horn-von Hoegen, A. Al Falou, B.H. Müller, U. Köhler, L. Andersohn, B. Dahlheimer and M. Henzler,
    Physical Review B 49 (1994) pp. 2637-2650
    DOI


  28. 1993


  29. Formation of the interfacial dislocation network in surfactant-mediated growth of Ge on Si(111) by SPALEED, Part I,
    M. Horn-von Hoegen, A. Al Falou, H. Pietsch, B. H. Müller and M. Henzler,
    Surface Science 298 (1993) pp. 29-42
    DOI

  30. Surfactant induced reversible changes of surface morphology,
    M. Horn-von Hoegen, B. H. Müller, A. Al Falou and M. Henzler,
    Physical Review Letters 71 (1993) pp. 3170-3173
    DOI

  31. Surface morphology and strain relief in surfactant mediated growth of Ge on Si(111),
    M. Horn-von Hoegen, M. Pook, A. Al Falou, B. H. Müller and M. Henzler,
    Scanning Microscopy 7 (1993) pp. 481-488
    DOI

  32. The interplay of surface morphology and strain relief in surfactant mediated growth of Ge on Si(111),
    M. Horn-von Hoegen, M. Pook, A. Al Falou, B. H. Müller and M. Henzler,
    Surface Science 284 (1993) pp. 53-66
    DOI


  33. 1992


  34. Growth of monoatomic layers: investigations with electron diffraction and scanning tunneling microscopy,
    M. Henzler, M. Horn-von Hoegen and U. Köhler,
    Festkörperprobleme 32 (1992) p. 333
    DOI


  35. 1989


  36. The initial stages of growth of silicon on Si(111) by spot profile analysing low-energy electron diffraction,
    M. Horn-von Hoegen, J. Falta and M. Henzler,
    Thin Solid Films 183 (1989) pp. 213-220
    DOI

  37. SPA-LEED studies of defects in thin epitaxial NiSi2 layers on Si(111),
    J. Falta, M. Horn and M. Henzler,
    Applied Surface Science 41-42 (1989) pp. 230-235
    DOI


  38. 1988


  39. Crystal Growth Studies with LEED,
    M. Horn and M. Henzler,
    Proceedings of the 2nd Symposium of Surface Science in Kaprun, Österreich (1988) p. 0


  40. Nucleation and growth during molecular beam epitaxy (MBE) of Si on Si(111),
    R. Altsinger, H. Busch, M. Horn and M. Henzler,
    Surface Science 200 (1988) pp. 235-246
    DOI

  41. LEED investigations of Si MBE on Si(100),
    M. Horn, U. Gotter and M. Henzler,
    Proc. NATO-Workshop on RHEED and Reflection Electron Imaging of Surfaces. Eds.: P.K.Larsen und P.J.D 188 (1988) p. 0
    DOI

  42. Low-energy electron diffraction investigations of Si molecular-beam epitaxy on Si(100),
    M. Horn, U. Gotter and M. Henzler,
    J. Vac. Sci. Technol. B 6 (1988) pp. 727-730
    DOI


  43. 1987


  44. LEED studies of Si molecular beam epitaxy on Si(111),
    M. Horn and M. Henzler,
    Journal of Crystal Growth 81 (1987) pp. 428-433
    DOI