All Publications


    2017


  1. Revealing the subfemtosecond dynamics of orbital angular momentum in nanoplasmonic vortices,
    G. Spektor, D. Kilbane, A.K. Mahro, B. Frank, S. Ristok, L. Gal, P. Kahl, D. Podbiel, S. Mathias, H. Giessen, F.-J. Meyer zu Heringdorf, M. Orenstein and M. Aeschlimann,
    Science 355 (2017) pp. 1187-1191
    DOI

  2. Direct Observation of Surface Plasmon Polariton Propagation and Interference by Time-Resolved Imaging in Normal-Incidence Two Photon Photoemission Microscopy,
    Ph. Kahl, D. Podbiel, Chr. Schneider, A. Makris, S. Sindermann, Chr. Witt, D. Kilbane, M. Horn-von Hoegen, M Aeschlimann and F. Meyer zu Heringdorf,
    Plasmonics 0 (2017)
    DOI


  3. 2016


  4. Spatio-temporal imaging of surface plasmon polaritons in two photon photoemission microscopy,
    F.-J. Meyer zu Heringdorf, D. Podbiel, N. Raß, A. Makris, N. M. Buckanie, P. Kahl ,
    Proc. SPIE 9921 (2016) p. 992110
    DOI

  5. Decay of isolated hills and saddles on Si(001),
    P. Kirschbaum, L. Brendel, K. Roos, M. Horn-von Hoegen, F.-J. Meyer zu Heringdorf,
    Materials Research Express 3 (8) (2016)
    DOI

  6. Dy uniform film morphologies on graphene studied with SPA-LEED and STM,
    D. McDougall, H. Hattaba, M.T. Hershberger, M. Hupalo, M. Horn von Hoegen, P.A. Thiel and M.C. Tringides,
    Carbon 108 (2016) pp. 283-293
    DOI

  7. Two-dimensional interaction of spin chains in the Si(553)-Au nanowire system,
    B. Hafke, T. Frigge, T. Witte, B. Krenzer, J. Aulbach, J. Schäfer, R. Claessen, S. C. Erwin, and M. Horn-von Hoegen,
    Phys. Rev. B 94 (2016) p. 161403
    DOI

  8. Analysis of the contrast in normal-incidence surface plasmon photoemission microscopy in a pump–probe experiment with adjustable polarization,
    D. Podbiel, Ph. Kahl , F.-J. Meyer zu Heringdorf,
    Appl. Phys. B 122:90 (2016)
    DOI

  9. A combined STM and SPA-LEED study of the "explosive" nucleation and collective diffusion in Pb/Si(111),
    H. Hattab, M. Hupalo, M. Hershberger, M. Horn von Hoegen and M.C. Tringides,
    Surf. Sci. 646 (2016) pp. 50-55
    DOI


  10. 2015


  11. Thickness-dependent electron-lattice equilibration in laser-excited thin Bismuth films,
    K. Sokolowski-Tinten, R. Li, A. H. Reid, S. P. Weathersby, F. Quirin, T. Chase, R. Coffee, J. Corbett, A. Fry, N. Hartmann, C. Hast, R. Hettel, M. Horn von Hoegen, D. Janoschka, J. R. Lewandowski, M. Ligges, F. Meyer zu Heringdorf, X. Shen, T. Vecchione, C. Witt, J. Wu,,
    New J. Phys. 17 (2015) p. 113047
    DOI

  12. Nanoscale thermal transport in selforganized epitaxial Ge nanostructures on Si(001),
    T. Frigge, B. Hafke, V. Tinnemann, T. Witte, B. Krenzer and M. Horn-von Hoegen,
    Semiconductor Science and Technology 30 (2015) p. 105027
    DOI

  13. Spot profile analysis and lifetime mapping in ultrafast electron diffraction: Lattice excitation of self-organized Ge nanostructures on Si(001),
    T. Frigge, B. Hafke, V. Tinnemann, T. Witte and M. Horn-von Hoegen,
    Structural Dynamics 2 (2015) p. 035101
    DOI

  14. Barrier-free subsurface incorporation of 3d metal atoms into Bi(111) films,
    C. Klein, N. J. Vollmers, U. Gerstmann, P. Zahl, D. Lükermann, G. Jnawali, H. Pfnür, C. Tegenkamp, P. Sutter, W. G. Schmidt, and M. Horn-von Hoegen,
    Phys. Rev. B 91 (2015) p. 195441
    DOI

  15. Signatures of plasmoemission in two photon photoemission electron microscopy,
    F.-J. Meyer zu Heringdorf ; P. Kahl ; A. Makris ; S. Sindermann ; D. Podbiel ; M. Horn-von Hoegen,
    SPIE Proceedings 9361 (2015)
    DOI

  16. Nanoscale heat transport from Ge hut, dome and relaxed clusters on Si(001) measured by ultrafast electron diffraction,
    T. Frigge, B. Hafke, V. Tinnemann, B. Krenzer, and M. Horn-von Hoegen ,
    Appl. Phys. Letters 106 (2015) pp. 053108-1-053108-4
    DOI


  17. 2014


  18. Europium underneath graphene on Ir(111): Intercalation mechanism, magnetism, and band structure,
    S. Schumacher, F. Huttmann, M. Petrovic, C. Witt, D. F. Förster, Chi Vo-Van, J. Coraux, A. J. Martinez-Galera, V. Sessi, I. Vergara, R. Rückamp, M. Grüninger, N. Schleheck, F. Meyer zu Heringdorf, P. Ohresser, M. Kralj, T. O. Wehling, T. Michely,
    Phys. Rev. B 90 (2014) p. 235437
    DOI

  19. In-situ high-resolution low energy electron diffraction study of strain relaxation in heteroepitaxy of Bi(111) on Si(001): Interplay of strain state, misfit dislocation array and lattice parameter,
    H. Hattab, G. Jnawali, M. Horn von Hoegen,
    Thin Solid Films 570 (2014) pp. 159-163
    DOI

  20. Comparing ultrafast surface and bulk heating using time-resolved electron diffraction,
    C. Streubühr, A. Kalus, P. Zhou, M. Ligges, A. Hanisch-Blicharski, M. Kammler, U. Bovensiepen, M. Horn-von Hoegen and D. von der Linde,
    Appl. Phys. Letters 104 (2014) p. 161611
    DOI

  21. Normal-Incidence Photoemission Electron Microscopy (NI-PEEM) for Imaging Surface Plasmon Polaritons,
    P. Kahl, S. Wall, C. Witt, C. Schneider, D. Bayer, A. Fischer, P. Melchior, M. Horn-von Hoegen, M. Aeschlimann, F.-J. Meyer zu Heringdorf,
    Plasmonics 9 (2014) pp. 1401-1407
    DOI

  22. Strain state, film and surface morphology of epitaxial topological insulator Bi2Se3 films on Si(111),
    C. Klein, M. Vyshnepolsky, A. Kompch, F. Klasing, A. Hanisch-Blicharski, M. Winterer, M. Horn-von Hoegen,
    Thin Solid Films 564 (2014) pp. 241-245
    DOI

  23. Lattice degradation by moving voids during reversible electromigration,
    S. P. Sindermann, A. Latz, D. Spoddig, C. Schöppner, D. E. Wolf, G. Dumpich and F.-J. Meyer zu Heringdorf,
    Appl. Phys. Letters 116 (2014) pp. 034502-1-034502-4
    DOI

  24. Hysteresis proves that the In/Si(111) (8x2) to (4x1) phase transition is first-order,
    F. Klasing, T. Frigge, B. Hafke, S. Wall, B. Krenzer, A. Hanisch-Blicharski, and M. Horn-von Hoegen,
    Phys. Rev. B 89 (2014) p. 121107
    DOI

  25. Anisotropy of electromigration-induced void and island drift,
    A. Latz, S. P. Sindermann, L Brendel, G. Dumpich, F.-J. Meyer zu Heringdorf and D. E. Wolf,
    J. Phys.: Condens. Matter 26 (2014) p. 055005
    DOI


  26. 2013


  27. Interaction of light and surface plasmon polaritons in Ag islands studied by nonlinear photoemission microscopy,
    Niemma M. Buckanie, Pierre Kirschbaum, Simon Sindermann and Frank J. Meyer zu Heringdorf,
    Ultramicroscopy 130 (2013) pp. 49-53
    DOI

  28. Frigge et al. Reply on "An Atomistic picture of charge density wave formation at surfaces",
    T. Frigge, S. Wall, B. Krenzer, St. Wippermann, S. Sanna, F. Klasing, A. Hanisch-Blicharski, M. Kammler, W. G. Schmidt, and M. Horn-von Hoegen,
    Physical Review Letters 111 (2013) p. 149602
    DOI

  29. Al-induced faceting of Si(113),
    C. Klein, I. Heidmann, T. Nabbefeld, M. Speckmann, T. Schmidt, F.-J. Meyer zu Heringdorf, J. Falta, M. Horn-von Hoegen,
    Surface Science 618 (2013) pp. 109-114
    DOI

  30. Epitaxial growth of the topological insulator Bi2Se3 on Si(111): Growth mode, lattice parameter and strain s,
    M. Vyshnepolsky, C. Klein, F. Klasing, A. Hanisch-Blicharski and M. Horn-von Hoegen,
    Appl. Phys. Letters 103/11 (2013) p. 111909
    DOI

  31. Mode conversion and long-lived vibrational modes in lead monolayers on silicon (111) after femtosecond laser excitation: A molecular dynamics simulation,
    S. Sakong, P. Kratzer, S. Wall, A. Kalus and M. Horn-von Hoegen,
    Phys. Rev. B 88 (2013) p. 115419
    DOI

  32. Lattice dependent motion of voids during electromigration,
    S. P. Sindermann, A. Latz, G. Dumpich, D. E. Wolf, and F.-J. Meyer zu Heringdorf,
    Journal of Applied Physics 113 (2013) p. 134505
    DOI

  33. Ultrafast laser-induced melting and ablation studied by time-resolved diffuse X-ray scattering,
    M. Nicoul, F. Quirin, A.M. Lindenberg, A. Barty, D.M. Fritz, D. Zhu, H. Lemke, M. Chollet, D.A. Reis, J. Chen, S. Ghimire, M. Trigo, M. Fuchs, K.J. Gaffney, J. Larsson, T. Becker, S. Meyer, T. Payer, F. Meyer zu Heringdorf, M. Horn-von Hoegen, M. Jerman a,
    EPJ Web of Conferences 41 (2013) pp. 04013-1-04013-3
    DOI

  34. Effect of adsorbed magnetic and non-magnetic atoms on electronic transport through surfaces with strong spin-orbit coupling,
    D. Lükermann, S. Sologub, H. Pfnür, C. Klein, M. Horn-von Hoegen, and C. Tegenkamp,
    Materialwissenschaft und Werkstofftechnik 44 (2013) pp. 210-217
    DOI

  35. Ultrafast time resolved reflection high energy electron diffraction with tilted pump pulse fronts,
    P. Zhou, C. Streubühr, A. Kalus, T. Frigge, S. Wall, A. Hanisch-Blicharski, M. Kammler, M. Ligges, U. Bovensiepen, D. von der Linde and M. Horn-von Hoegen,
    EPJ Web of Conferences 41 (2013) pp. 10016-1-10016-3
    DOI

  36. Nanoscale heat transport in self-organized Ge clusters on Si(001),
    T. Frigge, A. Kalus, F. Klasing, M. Kammler, A. Hanisch-Blicharski and M. Horn-von Hoegen,
    MRS Proceedings 1456 (2013)
    DOI

  37. Ultra-fast electron diffraction at surfaces: From nanoscale heat transport to driven phase transitions,
    A. Hanisch-Blicharski, A. Janzen, B. Krenzer, S. Wall, F. Klasing, A. Kalus, T. Frigge, M. Kammler and M. Horn-von Hoegen,
    Ultramicroscopy 127 (2013) pp. 2-8
    DOI


  38. 2012


  39. The interplay of topography and energy dissipation in pentacene thin films,
    S. Wall, D. Thien, F.-J. Meyer zu Heringdorf,
    Journal of Electron Spectroscopy and Related Phenomena 185/10 (2012) pp. 436-440
    DOI

  40. Scattering at magnetic and nonmagnetic impurities on surfaces with strong spin-orbit coupling,
    D. Lükermann, S. Sologub, H. Pfnür, C. Klein, M. Horn-von Hoegen, and C. Tegenkamp,
    Phys. Rev. B 86 (2012) p. 195432
    DOI

  41. Transient anisotropy in the electron diffraction of femtosecond laser-excited bismuth,
    P. Zhou, C. Streubühr, M. Ligges, T. Brazda, T. Payer, F. Meyer zu Heringdorf, M. Horn-von Hoegen and D. von der Linde,
    New Journal of Physics 14 (2012) p. 103031
    DOI

  42. An Atomistic picture of charge density wave formation at surfaces,
    S. Wall, B. Krenzer, F. Klasing, A. Hanisch-Blicharski, M. Kammler, M. Horn-von Hoegen, S. Wippermann, S. Sanna, W.G. Schmidt,
    Physical Review Letters 109 (2012) p. 186101
    DOI

  43. Heat Transport through Interfaces with and without Misfit Dislocation Arrays,
    A. Hanisch-Blicharski; B. Krenzer; S. Wall; A. Kalus; T. Frigge; M. Horn-von Hoegen,
    Journal of Materials Research 27 (2012) pp. 2718-2723
    DOI

  44. Manipulation of Electronic Transport in the Bi(111) Surface State,
    G. Jnawali, C. Klein, Th. Wagner, H. Hattab, P. Zahl, D. P. Acharya, P. Sutter, A. Lorke and M. Horn-von Hoegen ,
    Physical Review Letters 108 (2012) p. 266804
    DOI

  45. High-quality epitaxial Bi(111) films on Si(111) by isochronal annealing,
    T. Payer, C. Klein, M. Acet, V. Ney, M. Kammler, F.-J. Meyer zu Heringdorf and M. Horn-von Hoegen,
    Thin Solid Films 520 (2012) pp. 6905-6908
    DOI

  46. Nanoscale Heat Transport through Epitaxial Ultrathin Hetero Films: Bi(111)/Si(001) and Bi(111)/Si(111) ,
    A. Hanisch-Blicharski, S. Wall, A. Kalus, T. Frigge and M. Horn-von Hoegen,
    MRS Proceedings MRSF11-1404-W02-08 (2012)
    DOI

  47. Interplay of wrinkles, strain, and lattice parameter in Graphene layers on Iridium,
    H. Hattab, A.T. N'Diaye, D. Wall, C. Klein, G. Jnawali, J. Coraux, C. Busse, R. van Gastel, B. Poelsema, T. Michely, F.-J. Meyer zu Heringdorf, M. Horn-von Hoegen ,
    Nanoletters 12 (2012) pp. 678-682
    DOI

  48. Impact of C60 adsorption on surface plasmon polaritons on self-assembled Ag(111) islands on Si(111),
    P. Kirschbaum, N. M. Buckanie and F.-J. Meyer zu Heringdorf,
    Plasmonics 7 (2) (2012) pp. 229-233
    DOI


  49. 2011


  50. Epitaxial Ag Nanowires with a Single Grain Boundary for Electromigration,
    S. Sindermann, C. Witt, D. Spoddig, M. Horn-von Hoegen, G. Dumpich, and F.-J. Meyer zu Heringdorf,
    Rev. Sci. Instrum. 82 (2011) p. 123907
    DOI

  51. Dynamics of Reconstructed Zones Formed Around Islands on Si During Desorption: Diffusion Made Visible,
    F. Meyer zu Heringdorf, D. Wall, K.R. Roos, I. Lohmar, J. Krug and M. Horn-von Hoegen,
    Proceedings of the ALC 11 Conference 0 (2011) p. 372

  52. Shape, orientation, and crystalline composition of silver islands on Si(111),
    D. Wall, S. Tikhonov, S. Sindermann, D. Spoddig, C. Hassel, M. Horn-von Hoegen, and F. Meyer zu Heringdorf,
    IBM Journal of Research and Development 55(4) (2011) pp. 9:1-9:6
    DOI

  53. Transient reversal of a Peierls-transition: Extreme phonon softening in laser-excited Bismuth,
    Wei L., M. Nicoul, U. Shymanovich, A. Tarasevitch, M. Kammler, M. Horn-von Hoegen, D. von der Linde and K. Sokolowski-Tinten,
    Ultrafast Phenomena XVII (2011) p. 314

  54. Anisotropic scattering of surface state electrons at a point defect on Bi(111),
    M. C. Cottin, C. A. Bobisch, J. Schaffert, G. Jnawali, A. Sonntag, G. Bihlmayer, and R. Möller ,
    Appl. Phys. Letters 98 (2011) p. 22108
    DOI

  55. Growth temperature dependent graphene alignment on Ir(111),
    H. Hattab, A.T. N'Diaye, D. Wall, G. Jnawali, J. Coraux, C. Busse, R. van Gastel, B. Poelsema, T. Michely, F.-J. Meyer zu Heringdorf, and M. Horn-von Hoegen ,
    Appl. Phys. Letters 98 (2011) p. 141903
    DOI

  56. Atomically smooth epitaxial p-doped silicon nanowires catalyzed by aluminum at low-temperature,
    O. Moutanabbir, S. Senz, R. Scholz, M. Alexe, Y. Kim, Yuwe Wang, C. Wiethoff, T. Nabbefeld, F. Meyer zu Heringdorf, M. Horn-von Hoegen ,
    ACS Nano 5 (2) (2011) pp. 1313-1320
    DOI

  57. Lost in reciprocal space? Determination of scattering condition in spot profile analysis low energy electron diffraction,
    C. Klein, T. Nabbefeld, H. Hattab, D. Meyer, G. Jnawali, M. Kammler, F. Meyer zu Heringdorf, A. Golla-Franz, B.H Müller, Th. Schmidt, M. Henzler, and M. Horn-von Hoegen ,
    Rev. Sci. Instrum. 82 (2011) p. 35111
    DOI


  58. 2010


  59. Anisotropy of Ag Diffusion on Vicinal Si Surfaces,
    S. Sindermann, D. Wall, K.R. Roos, M. Horn-von Hoegen, F.-J. Meyer zu Heringdorf,
    e-Journal of Surface Science and Nanotechnology 8 (2010) pp. 372-376
    DOI

  60. Two-dimensional electron transport and scattering in Bi(111) surface states,
    G. Jnawali, Th. Wagner, H. Hattab, R. Möller, A. Lorke, M. Horn-von Hoegen,
    e-Journal of Surface Science and Nanotechnology 8 (2010) p. 27
    DOI

  61. Extreme phonon softening in laser-excited Bismuth - towards an inverse Peierls-transition,
    Wei L., M. Nicoul, U. Shymanovich, A. Tarasevitch, M. Kammler, M. Horn-von Hoegen, D. von der Linde, K. Sokolowski-Tinten,
    MRS Proceedings 1230E (2010) p. 3
    DOI

  62. The role of thermal and electronic pressure in the picosecond acoustic response of femtosecond laser-excited solids,
    U. Shymanovich, M. Nicoul, S. Kähle, Wei Lu, A. Tarasevitch, Ping Zhou, T. Wietler, M. Horn-von Hoegen, D. von der Linde, K. Sokolowski-Tinten,
    MRS Proceedings 1230E (2010) p. 6
    DOI

  63. Silver Induced Faceting of Si(112),
    T. Nabbefeld, C. Wiethoff, F.-J. Meyer zu Heringdorf, M. Horn-von Hoegen,
    Appl. Phys. Letters 97 (2010) p. 41905
    DOI

  64. Nonlinear photoemission microscopy with surface plasmon polaritons,
    F.-J. Meyer zu Heringdorf, N. Buckanie,
    Microscopy and Microanalysis 16 (2010) p. 502
    DOI

  65. Coherent acoustic and optical phonons in laser-excited solids studied by ultrafast time-resolved X-ray diffraction,
    U. Shymanovich, M. Nicoul, W. Lu, A. Tarasevitch, M. Kammler, M. Horn-von Hoegen, D. von der Linde, K. Sokolowski-Tinten,
    High-Power Laser Ablation 2010, AIP Conf. Proc. 1278 (2010) p. 558
    DOI

  66. Imaging diffusion fields on a surface with multiple reconstructions: Ag/Si(111) ,
    D. Wall, I. Lohmar, K.R. Roos, J. Krug, M. Horn-von Hoegen, F.-J. Meyer zu Heringdorf,
    New Journal of Physics 12 (2010) p. 103019
    DOI

  67. Steering the growth and watching the strain of epitaxial graphene on Iridium(111),
    A.T. N'Diaye, R. van Gastel, A.J. Martinez-Galera, J. Coraux, H. Hattab, D. Wall, F.-J. Meyer zu Heringdorf, M. Horn-von Hoegen, J.M. Gomez-Rodriguez, B. Poelsema, C. Busse, Th. Michely,
    IMC17 Conference Proceedings (2010) p. 11.4

  68. High temperature surface diffusion involving multiple reconstructions: Ag/Si(111),
    D. Wall, I. Lohmar, K.R. Roos, J. Krug, F.-J. Meyer zu Heringdorf, M. Horn-von Hoegen,
    IMC17 Conference Proceedings (2010) p. 11511

  69. Imaging of surfaces plasmon polariton waves in two photon photoemission microscopy,
    F.-J. Meyer zu Heringdorf, S. Sindermann, P. Kirschbaum, N.M. Buckanie,
    IMC17 Conference Proceedings (2010) p. 11515
    DOI


  70. 2009


  71. Ultra-fast time-resolved electron diffraction of strongly driven phase transitions on silicon surfaces,
    S. Möllenbeck, A. Hanisch-Blicharski, P. Schneider, M. Ligges, P. Zhou, M. Kammler, B. Krenzer and M. Horn-von Hoegen,
    MRS Proceedings 1230-MM03-09 (2009) pp. 3-9
    DOI

  72. Exciton sensitive microscopy of anthracene thin films on Si(111),
    N.M. Buckanie, F.-J. Meyer zu Heringdorf,
    Organic Electronics 10 (2009) pp. 446-452
    DOI

  73. Epitaxial growth of Bi(111) on Si(001),
    G. Jnawali, H. Hattab, C. A. Bobisch, E. Zubkov, C. Deiter, T. Weisemoeller, F. Bertram, J. Wollschläger, R. Möller, M. Horn-von Hoegen,
    e-Journal of Surface Science and Nanotechnology 7 (2009) pp. 441-447
    DOI

  74. Stable tungsten silicide contacts for surface sensitive conductivity measurements,
    G. Jnawali, F.-J. Meyer zu Heringdorf, D. Wall, S. Sindermann, M. Horn-von Hoegen,
    J. Vac. Sci. Technol. B B27 (2009) p. 180
    DOI

  75. Nucleation and initial growth in the semimetallic homoepitaxial system of Bi on Bi(111),
    G. Jnawali, Th. Wagner, H. Hattab, R. Möller, M. Horn-von Hoegen,
    Phys. Rev. B B79 (2009) p. 193306
    DOI

  76. Nanoscale dislocation patterning in Bi(111)/Si(001) heteroepitaxy,
    G. Jnawali, H. Hattab, C.A. Bobisch, A. Bernhart, E. Zubkov, R. Möller, M. Horn-von Hoegen,
    Surface Science 603 (2009) p. 2057
    DOI

  77. Space charge effects in photoemission electron microscopy using amplifed femtosecond laser pulses,
    N. M. Buckanie, J. Göhre, P. Zhou, D. von der Linde, M. Horn-von Hoegen, F.-J. Meyer zu Heringdorf,
    J. Phys.: Condens. Matter 21 (2009) p. 314003
    Link

  78. The influence of anisotropic diffusion on Ag nanowire formation,
    D. Wall, S. Sindermann, M. Horn-von Hoegen, F.-J. Meyer zu Heringdorf,
    J. Phys.: Condens. Matter 21 (2009) p. 314023
    Link

  79. Growth of graphene on Ir(111),
    J. Coraux, A. T. N'Diaye, M. Engler , C. Busse, D. Wall, N. Buckanie, F.-J. Meyer zu Heringdorf, R. van Gastel, B. Poelsema, T. Michely,
    New Journal of Physics 11 (2009) p. 23006
    DOI

  80. Electronic acceleration of atomic motions and disordering in bismuth,
    G. Sciaini, M. Harb, S. G. Kruglik, T. Payer, C. T. Hebeisen, F.-J. Meyer zu Heringdorf, M. Yamaguchi, M. Horn-von Hoegen, R. Ernstorfer, R. J. Dwayne Miller,
    Nature 458 (2009) p. 56
    DOI

  81. Phonon confinement effects in ultra-thin, epitaxial Bismuth-films on Silicon studied by time-resolved electron diffraction,
    B. Krenzer, A. Hanisch-Blicharski, P. Schneider, Th. Payer, S. Möllenbeck, O. Osmani, M. Kammler, R. Meyer, M. Horn-von Hoegen,
    Phys. Rev. B B80 (2009) p. 24307
    DOI

  82. Atomic View of the Photoinduced Collapse of Gold and Bismuth,
    R. Ernstorfer, M. Harb, C.T. Hebeisen, G. Sciaini, T. Dartigalongue, I. Rajkovic,M. Ligges, D. von der Linde, Th. Payer, M. Horn-von-Hoegen, F.-J. Meyer zu Heringdorf, S. Kruglik, R.J.D. Miller,
    Ultrafast Phenomena XVI 92 (2009) pp. 113-115
    DOI

  83. Electron-phonon energy transfer in Bi observed by time resolved electron diffraction,
    I. Rajkovic,M. Ligges, P. Zhou, Th. Payer, F.-J. Meyer zu Heringdorf, M. Horn-von-Hoegen, D. von der Linde,
    Ultrafast Phenomena XVI 92 (2009) pp. 110-112
    DOI

  84. Selecting a single orientation for millimeter sized graphene sheets,
    R. van Gastel, A.T. N'Diaye, D. Wall, J. Coraux, C. Busse, N.M. Buckanie, F.-J. Meyer zu Heringdorf, M. Horn-von Hoegen, T. Michely, B. Poelsema,
    Appl. Phys. Letters 95 (2009) p. 121901
    DOI

  85. In situ observation of stress relaxation in epitaxial graphene,
    A.T. N'Diaye, R. van Gastel, G. Martinez, J. Coraux, H. Hattab, F.-J. Meyer zu Heringdorf, D. Wall, M. Horn-von Hoegen, J.-M. Gomez-Rodriguez, B. Poelsema, C. Busse, T. Michely,
    New Journal of Physics 11 (2009) p. 113056
    DOI

  86. Transient Cooling of Ultrathin Epitaxial Bi(111)-Films on Si(111) upon Femtosecond Laser Excitation Studied by Ultrafast Reflection High Energy Electron Diffraction",
    A. Hanisch-Blicharski, B. Krenzer, S. Möllenbeck, M. Ligges, P. Zhou, M. Kammler, M. Horn-von Hoegen,
    MRS Proceedings 1172 (2009) pp. 4-8
    Link

  87. Electromigration and Potentiometry Measurements of Single-Crystalline Ag Nanowires under UHV Conditions,
    M.R. Kaspers, A.M. Bernhart, F.-J. Meyer zu Heringdorf, G. Dumpich, R. Möller,
    J. Phys.: Condens. Matter 21 (2009) p. 265601
    DOI

  88. Nonlinear Photoemission Microscopy: A tool for the Plasmonic Sandbox,
    F.-J. Meyer zu Heringdorf, N. M. Buckanie,
    Proceedings of the ALC '09 Conference 96-99 (2009)


  89. 2008


  90. Nanopattern Formation by Periodic Array of Interfacial Misfit Dislocations in Bi(111)/Si(001) Heteroepitaxy,
    G. Jnawali, H. Hattab, C. Bobisch, A. Bernhart, E. Zubkov, F.-J. Meyer zu Heringdorf, R.Möller, B. Krenzer, M. Horn-von Hoegen,
    MRS Proceedings (2008)
    Link

  91. Absence of surface stress change during pentacene thin film growth on the Si(111)-(7x7) surface: a buried reconstruction interface,
    P. Kury, K.R. Roos, M. Horn- von Hoegen, F.-J. Meyer zu Heringdorf,
    New Journal of Physics 10 (2008) p. 23037
    DOI

  92. Disorder-mediated ordering by self-interfactant effect in organic thin film growth of pentacene on silicon,
    P. Kury, K.R. Roos, D. Thien, S. Möllenbeck, D. Wall, M. Horn- von Hoegen, F.-J. Meyer zu Heringdorf,
    Organic Electronics 9 (2008) p. 461
    DOI

  93. The application of low energy electron microscopy and photoemission electron microscopy to organic thin films,
    F.-J. Meyer zu Heringdorf,
    J. Phys.: Condens. Matter 20 (2008) p. 184007
    DOI

  94. Growth of Ag nanowires on Au-pre-facetted 4? vicinal Si(0 0 1),
    F.-J. Meyer zu Heringdorf, K.L. Roos, Chr. Wiethoff, M. Horn- von Hoegen, K.R. Roos,
    Surface Science 602 (2008) pp. 1852-1857
    DOI

  95. Real-Time View of Mesoscopic Surface Diffusion,
    K.R. Roos, K.L. Roos, I. Lohmar, D. Wall, J. Krug, M. Horn- von Hoegen, F.-J. Meyer zu Heringdorf,
    Physical Review Letters 100 (2008) p. 16103
    DOI

  96. Epitaxial growth of thin, low defect Bi films on Si(001): strain state, surface morphology and defects,
    H. Hattab, E. Zubkov, A. Bernhart, G. Jnawali, C.Bobisch, B. Krenzer, M. Acet, R. Möller, M. Horn-von Hoegen,
    Thin Solid Films 516 (2008) p. 8227
    DOI

  97. Thermal response of epitaxial thin Bi films on Si(001) upon femtosecond laser excitation studied by ultrafast electron diffraction,
    A. Hanisch, B. Krenzer, T. Pelka, S. Möllenbeck, M. Horn-von Hoegen,
    Phys. Rev. B 77 (2008) p. 125410
    DOI

  98. Heat transport in nanoscale heterosystems: a numerical simulation and analytical solution,
    B. Krenzer, A. Hanisch, A. Janzen, A. Duvenbeck, B. Rethfeld, M. Horn-von Hoegen,
    Journal of Nanomaterials 2008 (2008) p. 590609
    DOI

  99. Homoepitaxial growth of Bi(111),
    G. Jnawali, H. Hattab, C. Bobisch, A. Bernhart, E. Zubkov, R. Möller, M. Horn-von Hoegen,
    Phys. Rev. B 78 (2008) p. 35321
    DOI

  100. Au stabilization and coverage of sawtooth facets on Si nanowires grown by vapor-liquid-solid epitaxy,
    C. Wiethoff, F.M. Ross, M. Copel, M. Horn-von Hoegen, F.-J. Meyer zu Heringdorf,
    Nanoletters 8 (2008) p. 3065
    DOI

  101. Ultrathin Epitaxially Grown Bismuth (111) Membranes,
    T. Payer, I. Rajkovic, M. Ligges, D. von der Linde, M. Horn-von Hoegen, F.-J. Meyer zu Heringdorf,
    Appl. Phys. Letters 93 (2008) p. 93102
    DOI

  102. LEEM/PEEM Study of Anisotropic Diffusion Fields in the Ag/Si(001) System,
    D. Wall, K. R. Roos, M. Horn-von Hoegen, F.-J. Meyer zu Heringdorf,
    MRS Proceedings 1088E (2008)
    Link


  103. 2007


  104. A pulsed electron gun for ultrafast electron diffraction at surfaces,
    A. Janzen, B. Krenzer, O. Heinz, P. Zhou, D. Thien, A. Hanisch, F.-J., Meyer zu Heringdorf, D. von der Linde, M. Horn-von Hoegen,
    Rev. Sci. Instrum. 78 (2007) p. 13906
    DOI

  105. Diffraction of strongly convergent X-rays from picosecondacoustic transients,
    U. Shymanovich, M. Nicoul, J. Blums, K. Sokolowski-Tinten, A.Tarasevitch, T. Wietler, M. Horn-von Hoegen, D. von der Linde,
    Applied Physics A 87 (2007) p. 7
    DOI

  106. Photoemission electron microscopy study of anthracene growth on Si(111),
    N.M. Buckanie, F.-J. Meyer zu Heringdorf,
    Surface Science 601 (2007) p. 1701
    DOI

  107. In situ monitoring of surface plasmons in single-crystalline Ag-nanowires,
    L.I. Chelaru, F.-J. Meyer zu Heringdorf,
    Surface Science 601 (2007) p. 4541
    DOI

  108. Lattice-matching periodic array of misfit dislocations: Heteroepitaxy of Bi(111) on Si(001),
    G. Jnawali, H. Hattab, F.-J. Meyer zu Heringdorf, B. Krenzer, M. Horn- von Hoegen,
    Phys. Rev. B 76 (2007) p. 35337
    DOI

  109. Femtosecond photoemission microscopy,
    F.-J. Meyer zu Heringdorf, L.I. Chelaru, S. Möllenbeck, D. Thien, M. Horn-von Hoegen,
    Surface Science 601 (2007) p. 4700
    DOI

  110. Ultrafast bond softening in Bismuth: Mapping a solid`s interatomic potential with X-rays,
    D. M. Fritz, D. A. Reis, B. Adams, R. A. Akre, J. Arthur, C. Blome, P. H. Bucksbaum, A. L. Cavalieri, S. Engemann, S. Fahy, R. W. Falcone, P. H. Fuoss, K. J. Gaffney, M. J. George, J. Hajdu, M. P. Hertlein, P. B. Hillyard, M. Horn-von Hoegen, et al.,
    Science 315 (2007) p. 633
    DOI

  111. Domain Sensitive Contrast in Photoelectron Emission Microscopy,
    D. Thien, P. Kury, M. Horn- von Hoegen, F.-J. Meyer zu Heringdorf,
    Physical Review Letters 99 (2007) p. 196102
    DOI


  112. 2006


  113. Electromigration in Self-Organized Single-Crystalline Silver Nanowires,
    B. Stahlmecke, F.-J. Meyer zu Heringdorf, L. I. Chelaru, M. Horn-von Hoegen, G. Dumpich,
    Appl. Phys. Letters 88 (2006) p. 53122
    DOI

  114. Electromigration in Gold and Single Crystalline Silver Nanowires,
    B. Stahlmecke, L. I. Chelaru, F.-J. Meyer zu Heringdorf, G. Dumpich,
    AIP Conference Proceedings 817 (2006) pp. 65-70
    DOI

  115. Analysis of mesoscopic patterns formed by the Au-induced faceting of vicinal Si(001),
    F.-J. Meyer zu Heringdorf,
    J. Phys.: Condens. Matter 18 (2006) pp. 1-15
    DOI

  116. Dynamics of an Ising chain under local excitation: An STM study of Si(100) dimer rows at T = 5K ,
    Y. Pennec, M. Horn-von Hoegen, Xiabobin Zhu, D.C. Fortin, M. R. Freeman,
    Physical Review Letters 96 (2006) p. 26102
    DOI

  117. Less strain energy despite fewer misfit dislocations: The impact of ordering,
    Th. Schmidt, R. Kröger, J.I. Flege, T. Clausen, J. Falta, A. Janzen, P. Zahl, P. Kury, M. Kammler, M. Horn-von Hoegen,
    Physical Review Letters 96 (2006) p. 66101
    DOI

  118. Ultrafast electron diffraction at surfaces after laser excitation,
    A. Janzen, B. Krenzer, P. Zhou, D. von der Linde, M. Horn-von Hoegen,
    Surface Science 600 (2006) p. 4094
    DOI

  119. Fringe Fields in Nonlinear Photoemission Microscopy,
    L.I. Chelaru, M. Horn-von Hoegen, D. Thien, F.-J. Meyer zu Heringdorf,
    Phys. Rev. B 73 (2006) p. 115416
    DOI

  120. Thermal Boundary Conductance in Heterostructures Studied by Ultrafast Electron Diffraction,
    B. Krenzer, A. Janzen, P. Zhou, D. von der Linde, M. Horn-von Hoegen,
    New Journal of Physics 8 (2006) p. 190
    DOI

  121. Lattice accommodation of epitaxial Bi(111) films on Si(001) studied with SPA-LEED and AFM,
    G. Jnawali, H. Hattab, B. Krenzer, M. Horn-von Hoegen,
    Phys. Rev. B 74 (2006) p. 195340
    DOI

  122. Three-dimensional size determination of particles with photoelectron emission microscopy,
    Liviu I. Chelaru, Frank-J. Meyer zu Heringdorf,
    Appl. Phys. Letters 89 (2006) p. 241908
    DOI

  123. Energy relaxation and anomalies in the thermo-acoustic response of femtosecond laser-excited Germanium,
    K. Sokolowski-Tinten, U. Shymanovich, M. Nicoul, J. Blums, A. Tarasevitch, M. Horn-von-Hoegen, D. von der Linde, A. Morak, T. Wietler,
    Ultrafast Phenomena XV 88 (2006) p. 597
    DOI


  124. 2005


  125. Controlled nucleation of dislocations by a spatially localized stress field,
    M. Kammler, D. Chidambarrao, K. W. Schwarz, C. T. Black, and F. M. Ross,
    Appl. Phys. Letters 87 (2005) p. 133116
    DOI

  126. SSIOD: the next generation,
    P. Kury, T. Grabosch, M. Horn-von Hoegen,
    Rev. Sci. Instrum. 76 (2005) p. 23903
    DOI

  127. Low energy electron diffraction of epitaxial growth of bismuth on Si(111),
    M. Kammler, M. Horn-von Hoegen,
    Surface Science 576 (2005) p. 56
    DOI

  128. Strain state analysis of hetero-epitaxial systems,
    A.A. AlFalou, M. Kammler, M. Horn-von Hoegen,
    Europhysics Letters 69(4) (2005) p. 570
    DOI

  129. Surfactant-mediated epitaxy of Ge on Si(111): beyond the surface,
    Th. Schmidt, R. Kröger, T. Clausen, J. Falta, A. Janzen, M. Kammler, P. Kury, P. Zahl, M. Horn-von Hoegen,
    Appl. Phys. Letters 86 (2005) p. 111910
    DOI

  130. High Temperature self-assembly of Ag nanowires on vicinal Si(001),
    K.R. Roos, K.L. Roos, M. Horn-von Hoegen, F.-J. Meyer zu Heringdorf,
    J. Phys.: Condens. Matter 17 (2005) p. 1407
    DOI

  131. Reciprocal Space Mapping by spot profile analyzing low energy electron diffraction,
    F.-J. Meyer zu Heringdorf, H. Pietsch, M. Horn-von Hoegen,
    Rev. Sci. Instrum. 76 (2005) p. 85102
    DOI

  132. Compact and transferable threefold evaporator for molecular beam epitaxy in ultrahigh vacuum ,
    P. Kury, R. Hild, D. Thien, H.-L. Günter, F.-J. Meyer zu Heringdorf, M. Horn-von Hoegen,
    Rev. Sci. Instrum. 76 (2005) p. 83906
    DOI

  133. Ultrafast X-Ray Diffraction,
    K. Sokolowski-Tinten, C. Blome, J. Blums, U. Shymanovich, M. Nicoul, A. Cavalleri, A. Tarasevitch, M. Horn-von Hoegen, M. Kammler, D. von der Linde,
    Ultrafast Phenomena XIV 79 (2005) p. 170
    DOI


  134. 2004


  135. Transition in growth mode by competing strain relaxation mechanisms: surfactant mediated epitaxy of SiGe alloys on Si,
    M. Kammler, M. Horn-von Hoegen,
    Appl. Phys. Letters 85 (2004) p. 3056
    DOI

  136. Direct observation of reconstruction induced changes of surface stress for Sb on Si(111),
    P. Kury, P. Zahl, M. Horn-von Hoegen,
    Analytical and Bioanalytical Chemistry 379 (2004) p. 582
    DOI

  137. Characterizing Single Crystal Surfaces using High Resolution Electron Diffraction,
    D. Thien, F.-J. Meyer zu Heringdorf , P. Kury , M. Horn-von Hoegen,
    Analytical and Bioanalytical Chemistry 379 (2004) p. 588
    DOI

  138. Impact of thermal dependence of elastic constants on surface stress measurements,
    Peter Kury, Michael Horn-von Hoegen,
    Rev. Sci. Instrum. 75 (2004) p. 1357
    DOI

  139. Precise calibration for surface stress induced optical deflection measurements,
    P. Kury, P. Zahl, M. Horn-von Hoegen,
    Rev. Sci. Instrum. 75 (2004) p. 2211
    DOI

  140. Strain relief during Ge hut cluster formation on Si(001) studied by high resolution LEED and surface-stress-induced optical deflection,
    M. Horn-von Hoegen, B.H. Müller, T. Grabosch, P. Kury,
    Phys. Rev. B 70 (2004) p. 235313
    DOI

  141. Flexible microprocessor-based evaporation controller,
    F.-J. Meyer zu Heringdorf, A.C. Belton,
    Rev. Sci. Instrum. 75 (2004) p. 5288
    DOI

  142. Chopped sample heating for quantitative profile analysis of low energy electron diffraction spots at high temperatures,
    P. Kury, P. Zahl, M. Horn-von Hoegen, C. Voges, H. Frischat, H.-L. Günter, H. Pfnür, M. Henzler,
    Rev. Sci. Instrum. 75 (2004) p. 4911
    DOI


  143. 2003


  144. Femtosecond X-ray measurement of coherent lattice vibrations near the Lindemann stability limit,
    K. Sokolowski-Tinten, C. Blome, J. Blums, A. Cavalleri, C. Dietrich, A. Tarasevitch, I. Uschmann, E. Förster, M. Kammler, M. Horn-von Hoegen, D. von der Linde,
    Nature 422 (2003) p. 287
    DOI

  145. Ge on Si(001) - a hetero epitaxial playground for surface science,
    Michael Horn-von Hoegen,
    Surface Science 537 (2003) pp. 1-3
    DOI

  146. Finite collection time effects in autocovariance function measurements,
    A. Menzel, E.H. Conrad, M.C. Tringides, M. Kammler, M. Horn-von Hoegen,
    J. Appl. Phys. 93 (2003) pp. 2229-2235
    DOI


  147. 2002


  148. Self-organisation of Ge nanostructures on i(111): A SPA-LEED and STM Study,
    R. Hild, M. Kammler, I. Dumkow, and M. Horn-von Hoegen,
    Omicron Newsletter 5(3) (2002) p. 2

  149. Si(001)step dynamics: a temporal low-energy electron diffraction study,
    M. Kammler, M. Horn-von Hoegen, N. Voss, M. Tringides, A. Menzel, E.H. Conrad,
    Phys. Rev. B 65 (2002) pp. 75312-75319
    DOI

  150. Third-generation generation cone-shaped SPA-LEED,
    P. Zahl and M. Horn-von Hoegen,
    Rev. Sci. Instrum. 73 (2002) pp. 2958-2962
    DOI

  151. Erratum to: Local Au coverage as driving force for Au induced faceting of vicinal Si(001):a LEEM and XPEEM study [Surf. Sci. 480 (2001) 103],
    Frank-J. Meyer zu Heringdorf, R. Hild, P. Zahl, Th. Schmidt, B. Ressel, S. Heun, E. Bauer, M. Horn-von Hoegen,
    Surface Science 496 (2002) p. 151
    DOI

  152. Kinetics of Au induced faceting of vicinal Si(111),
    R. Hild, C. Seifert, M. Kammler, F.-J. Meyer zu Heringdorf, M. Horn-von Hoegen, R. Zachuk, B. Z. Olshanetsky,
    Surface Science 512 (2002) pp. 117-127
    DOI

  153. Step and kink correlations on vicinal Ge(100) surfaces investigated by electron diffraction,
    Ch. Tegenkamp, J. Wollschläger, H. Pfnür, F.-J. Meyer zu Heringdorf, M. Horn-von Hoegen,
    Phys. Rev. B 65 (2002) p. 235316
    DOI

  154. Time-Resolved X-ray Diffraction Study of Ultrafast Structural Dynamics in Laser-Excited Solids,
    K. Sokolowski-Tinten, C. Blome, C. Dietrich, A. Tarasevitch, M. Horn-von Hoegen, D. von der Linde, A. Cavalleri, J.A. Squier, M. Kammler,
    Ultrafast Phenomena XIII 71 (2002) p. 36
    Link


  155. 2001


  156. Surface dynamics of stepped Si(001) studied by temporal LEED spectroscopy,
    M. Kammler, M. Horn-von Hoegen, N. Voss, M. Tringides, A. Menzel, E.H. Conrad,
    Collective surface diffusion coefficients under non-equilibrium conditions, Vol. 29 of NATO Advanced (2001)
    DOI

  157. Spatial Variation of Au Coverage as the Driving Force for Nanoscopic Pattern Formation,
    Frank-J. Meyer zu Heringdorf, Th. Schmidt, S. Heun, R. Hild, P. Zahl, B. Ressel, E. Bauer, M. Horn-von Hoegen,
    Physical Review Letters 86 (2001) pp. 5088-5091
    DOI

  158. Local Au coverage as driving force for Au induced faceting of vicinal Si(001): a LEEM and XPEEM study,
    Frank-J. Meyer zu Heringdorf, R. Hild, P. Zahl, Th. Schmidt, B. Ressel, S. Heun, E. Bauer, M. Horn-von Hoegen,
    Surface Science 480 (2001) pp. 103-108
    DOI

  159. Au induced reconstructions on Si(111),
    C. Seifert, R. Hild, M. Horn-von Hoegen, R. Zachuk, B. Z. Olshanetsky,
    Surface Science 488 (2001) pp. 233-238
    DOI

  160. Ultrafast x-ray measurement of laser heating in semiconductors: Parameters determining the melting threshold",
    A. Cavalleri, C.W. Siders, C. Rose-Petruck, R. Jimenez, Cs. T?th, J. A. Squier, C. P. J. Barty, K. R. Wilson, K. Sokolowski-Tinten, M. Horn-von Hoegen, D. von der Linde,
    Phys. Rev. B 63 (2001) p. 193306
    DOI

  161. Characterization of Ge deltadoped Si(111) with RBS-channeling,
    J. Yuhara, K. Morita, J. Falta, B.H. Müller and M. Horn-von Hoegen,
    Surface & Interface Analysis 31 (2001) pp. 754-760
    DOI

  162. Thermal activation of dislocation array formation,
    A. Janzen, I. Dumkow, M. Horn-von Hoegen,
    Appl. Phys. Letters 79 (2001) pp. 2387-2389
    DOI

  163. Femtosecond X-ray measurement of ultrafast melting and large acoustic transients,
    K. Sokolowski-Tinten, C. Blome, C. Dietrich, A. Tarasevitch, M. Horn-von Hoegen, D. von der Linde, A. Cavalleri, J. Squier, M. Kammler,
    Physical Review Letters 87 (2001) p. 225701
    DOI

  164. Transient lattice dynamics in fs-laser-excited semiconductors probed by ultrafast x-ray diffraction,
    K. Sokolowski-Tinten, M. Horn-von Hoegen, D. von der Linde, A. Cavalleri, C.W. Siders, F.L.H. Brown, D.M. Leitner, Cs. Toth, C.P.G. Barty, J.A. Squier, K.R. Wilson, M. Kammler,
    J. Phys. IV France 11 (2001) p. 2
    DOI


  165. 2000


  166. Direct observation of ultrafast non-thermal melting by ultrafast X-ray diffraction,
    C.W. Siders, A. Cavalleri, K. Sokolowski-Tinten, Cs. Toth, T. Guo, M. Kammler, M. Horn-von Hoegen, K.R. Wilson, D. von der Linde, C.P.J. Barty,
    Ultrafast Phenomena XII 66 (2000) p. 276
    DOI

  167. Au induced regular ordered striped domain wall structure of a (5x3) reconstruction on Si(001) studied by STM and SPA-LEED,
    R. Hild, F.-J. Meyer zu Heringdorf, P. Zahl and M. Horn-von Hoegen,
    Surface Science 454 (2000) pp. 851-855
    DOI

  168. Formation of hill and valley structures on Si(001) vicinal surfaces studied by spot-profile-analyzing LEED,
    H. Minoda, T. Shimakura, K. Yagi, F.-J. Meyer zu Heringdorf and M. Horn-von Hoegen,
    Phys. Rev. B 61 (2000) pp. 5672-5678
    DOI

  169. Anharmonic lattice dynamics in Germanium measured with ultrafast x-ray diffraction,
    A. Cavalleri, C.W. Siders, F.L.H. Brown, D.M. Leitner, C. T?th, J.A. Squier, C.P.J. Barty, K.R. Wilson, K. Sokolowski-Tinten, M. Horn-von Hoegen, D. von der Linde, M. Kammler,
    Physical Review Letters 85 (2000) pp. 586-589
    DOI

  170. Hydrogen induced domain-wall structure on Si(113),
    F.-J. Meyer zu Heringdorf, H. Goldbach, H.L. Guenter, M. Horn-von Hoegen, V. Dorna, U. Koehler, M. Henzler,
    Surface Science 458 (2000) pp. 147-154
    DOI

  171. Time-resolved X-ray diffraction study of ultrafast acoustic phonon dynamics in Ge/Si heterostructures,
    K. Sokolowski-Tinten, A. Cavalleri, C. W. Siders, F.L.H. Brown, D. M. Leitner, Cs. Toth, M. Kammler, M. Horn-von Hoegen, D. von der Linde, J. A. Squier, C. P. J. Barty , K. R. Wilson,
    Ultrafast Phenomena XII 66 (2000) p. 281
    Link DOI


  172. 1999


  173. 3-dim. Reciprocal space mapping of a quasi periodic misfit dislocation array,
    M. Kammler, T. Schmidt, P. Zahl, P. Kury, J. Falta, and M. Horn-von Hoegen,
    HASYLAB/DESY Annual Report 0 (1999)
    Link

  174. Ultrafast movies of atomic motion with femtosecond laser-based X-rays,
    C. W. Siders, A. Cavalleri, K. Sokolowski-Tinten, T. Guo, C. Toth, R. Jimenez, C. Rose-Petruck, M. Kammler, M. Horn-von Hoegen, D. von der Linde, K. R. Wilson, C. P. J. Barty,
    SPIE Proceedings 3776 (1999) p. 302
    DOI

  175. Ag on Si surfaces: from insulator to metal,
    M. Horn-von Hoegen, M. Henzler and G. Meyer,
    Morphological Organization in Epitaxial Growth, Ed. Z. Zhang and M.G. Lagally, World Scientific (1999) pp. 403-420
    Link

  176. Surfactant-mediated epitaxy of Ge on Si: progress in growth and electrical characterization,
    M. Kammler, D. Reinking, K.R. Hofmann and M. Horn-von Hoegen,
    Thin Solid Films 336 (1999) pp. 29-33
    DOI

  177. Gold-induced faceting on a Si(001) vicinal surface: SPA-LEED and REM study,
    H. Minoda, K. Yagi, F.-J. Meyer zu Heringdorf, A. Meier, D. Kähler and M. Horn-von Hoegen,
    Phys. Rev. B 59 (1999) pp. 2363-2375
    DOI

  178. Adsorbate induced giant faceting of vicinal Si(001),
    M. Horn-von Hoegen, F.-J. Meyer zu Heringdorf, R. Hild, P. Zahl, Th. Schmidt and E. Bauer,
    Thin Solid Films 336 (1999) pp. 16-21
    Link

  179. Bi surfactant mediated epitaxy of Ge on Si(111),
    M. Horn-von Hoegen, F.-J. Meyer zu Heringdorf, M. Kammler, C. Schaeffer, D. Reinking, and K.R. Hofmann,
    Thin Solid Films 343-344 (1999) pp. 579-582
    DOI

  180. Au induced giant faceting of vicinal Si(001),
    M. Horn-von Hoegen, F.-J. Meyer zu Heringdorf, R. Hild, P. Zahl, Th. Schmidt and E. Bauer,
    Surface Science 433-435 (1999) pp. 475-480
    DOI

  181. Fabrication of high-mobility Ge p-channel MOSFETs on Si substrates,
    D. Reinking, M. Kammler, N. Hoffmann, M. Horn-von Hoegen, K.R. Hofmann,
    Electronic Letters 35 (1999) pp. 503-504
    Link

  182. Gold-induced faceting on a Si(hhm) surface (m/h=1.4-1.5) studied by SPA-LEED,
    H. Minoda, T. Shimakura, K. Yagi, F.-J. Meyer zu Heringdorf, M. Horn-von Hoegen,
    Surface Science 432 (1999) pp. 69-80
    DOI

  183. Growth of semiconductor layers studied by spot profile analysis low energy electron diffraction,
    M. Horn-von Hoegen,
    Zeitschrift für Kristallographie 214 (1999) pp. 591-629
    Link

  184. Growth of semiconductor layers studied by spot profile analysis low energy electron diffraction,
    M. Horn-von Hoegen,
    Zeitschrift für Kristallographie 214 (1999) pp. 684-721
    Link

  185. Interplay of surface morphology and strain relief during surfactant mediated epitaxy of Ge on Si,
    P. Zahl, P. Kury, and M. Horn-von Hoegen,
    Applied Physics A 69 (1999) pp. 481-488
    DOI

  186. Ge p-MOSFETs Compatible with Si CMOS-Technology,
    D. Reinking, M. Kammler, N. Hoffmann, M. Horn-von Hoegen, K.R. Hofmann,
    Proceedings of the 29th ESSDERC 99 (1999) pp. 300-303
    Link

  187. Detection of nonthermal melting by ultrafast X-ray diffraction ,
    C.W. Siders, A. Cavalleri, K. Sokolowski-Tinten, Cs. Toth, T. Guo, M. Kammler, M. Horn-von Hoegen, K.R. Wilson, D. von der Linde, C.P.J. Barty,
    Science 286 (1999) pp. 1340-1342
    DOI

  188. Au induced giant faceting of vicinal Si(001),
    F.-J. Meyer zu Heringdorf, R. Hild, P. Zahl, M. Horn-von Hoegen, Th. Schmidt, S. Heun, B. Ressel, E. Bauer,
    Elettra Highlights 98-99 (1999) pp. 42-44
    Link


  189. 1998


  190. Strain Field of Periodic Dislocation Networks of SME grown Ge on Si(111),
    M. Kammler, J. Falta, P. Kury, B. H. Müller, T. Schmidt, and M. Horn-von Hoegen,
    HASYLAB/DESY Annual Report 0 (1998)
    Link

  191. Intensity fluctuations from surfaces and the assessment of time constants,
    M. I. Larsson, M. C. Tringides, H. Pfnür, H. Frischat, K. Budde, M. Kammler, and M. Henzler,
    Surface Science 411 (1998) pp. 789-793
    DOI

  192. Step arrangement control of vicinal Si(001) by Ag adsorption,
    A. Meier, P. Zahl, R. Vockenrodt and M. Horn-von Hoegen,
    Applied Surface Science 123/124 (1998) pp. 694-698
    DOI

  193. Macroscopic one-dimensional facetting of Si(100) upon Au adsorption,
    M. Horn-von Hoegen, H. Minoda, K. Yagi, F. Meyer zu Heringdorf and D. Kähler,
    Surface Science 402-404 (1998) pp. 464-469
    DOI

  194. Surfactant-grown low-doped Germanium layers on Silicon with high electron mobilities,
    K. Hofmann, D. Reinking, M. Kammler and M. Horn-von Hoegen,
    Thin Solid Films 321 (1998) pp. 125-130
    DOI

  195. X-ray characterization of buried delta layers,
    J. Falta, D. Bahr, G. Materlik, B.H. Müller and M. Horn-von Hoegen,
    Surface Review and Letters 5 (1998) pp. 145-149
    DOI

  196. Giant faceting of vicinal Si(001) induced by Au adsorption,
    F.-J. Meyer zu Heringdorf, Th. Schmidt, E. Bauer, D. Kähler, H. Minoda, K. Yagi and M. Horn-von Hoegen,
    Surface Review and Letters 5 (1998) pp. 1167-1178
    DOI

  197. High concentration Bi delta-doping layers on Si(001),
    J. Falta, O. Mielmann, T. Schmidt, A. Hille, C. Sanchez-Hanke, P. Sonntag, G. Materlik, F. Meyer zu Heringdorf, M. Kammler, M. Horn-von Hoegen, M. Copel,
    Applied Surface Science 123/124 (1998) pp. 538-541
    DOI

  198. Surface morphology changes due to adsorbates and due to electron bombardement,
    M. Henzler, D. Thielking, M. Horn-von Hoegen and V. Zielasek,
    Physica A 261 (1998) pp. 1-12
    DOI


  199. 1997


  200. Surfactant mediated heteroepitaxy: Interplay of diffusion, strain relief, and surface morphology,
    M. Horn-von Hoegen,
    Proc. NATO-ASI Workshop on Surface Diffusion: atomistic and Collective Processes, Eds. M.C. Tringide (1997)
    DOI

  201. Ag-mediated step-bunching instability on vicinal Si(100),
    S. Fölsch, G. Meyer, D. Winau, K.H. Rieder, M. Horn-von Hoegen, T. Schmidt and M. Henzler,
    Surface Science 394 (1997) pp. 60-70
    DOI

  202. Enhanced Sb segregation in surfactant-mediated heterogrowth: High-mobility, low-doped Ge on Si,
    D. Reinking, M. Kammler, M. Horn-von Hoegen and K. Hofmann,
    Appl. Phys. Letters 71 (1997) pp. 924-926
    DOI

  203. High electron mobilities in surfactant-grown Germanium on Silicon substrates,
    D. Reinking, M. Kammler, M. Horn-von Hoegen and K. Hofmann,
    Jpn. J. Appl. Phys. 36 (1997) pp. 1082-1085
    DOI


  204. 1996


  205. X-ray interface characterization of Ge delta layers on Si(001),
    D. Bahr, J. Falta, G. Materlik, B.H. Müller and M. Horn-von Hoegen,
    Physica B 221 (1996) pp. 96-100
    DOI

  206. Adsorbate induced change of equilibrium surface during crystal growth: Si on Si(111)/H,
    M. Horn-von Hoegen and A. Golla,
    Physical Review Letters 76 (1996) pp. 2953-2956
    DOI

  207. Towards perfect Ge delta layers on Si(001),
    J. Falta, D. Bahr, G. Materlik, B.H. Müller and M. Horn-von Hoegen,
    Appl. Phys. Letters 68 (1996) pp. 1394-1396
    DOI

  208. Stress reduction and interface quality of buried Sb delta-layers on Si(001),
    J. Falta, D. Bahr, A. Hille, G. Materlik, M. Kammler and M. Horn-von Hoegen,
    Appl. Phys. Letters 69 (1996) pp. 2906-2908
    DOI


  209. 1995


  210. Epitaxial layer growth of Ag(111)-films on Si(100),
    M. Horn-von Hoegen, T. Schmidt, G. Meyer, D. Winau and K.H. Rieder,
    Surface Science 331-333 (1995) pp. 575-579
    DOI

  211. Surfactants in Si(111) homoepitaxy,
    M. Horn-von Hoegen, J. Falta, M. Copel and R.M. Tromp,
    Appl. Phys. Letters 66 (1995) pp. 487-489
    DOI

  212. Interface roughening of Ge delta layers on Si(111),
    J. Falta, T. Gog, G. Materlik, B.H. Müller and M. Horn-von Hoegen,
    Phys. Rev. B 51 (1995) p. 7598
    DOI

  213. Lattice accomodation of Si(001) and Ag(111),
    M. Horn-von Hoegen, T. Schmidt, M. Henzler, G. Meyer, D. Winau and K.H. Rieder,
    Phys. Rev. B 52 (1995) pp. 10764-10767
    DOI

  214. Reconstruction dependent orientation of Ag(111) films on Si(001),
    S. Fölsch, G. Meyer, D. Winau, K.H. Rieder, T. Schmidt and M. Horn-von Hoegen,
    Phys. Rev. B 52 (1995) pp. 13745-13748
    DOI

  215. Grundschritte der Epitaxie: Sichtbarmachung mit Elektronenbeugung und Rastertunnelmikroskopie,
    M. Henzler, M. Horn-von Hoegen and U. Köhler,
    Nova Acta Leopoldina NF 73 (1995) pp. 31-51

  216. Influence of H on low temperature Si(111) homoepitaxy,
    M. Horn-von Hoegen and A. Golla,
    Surface Science 337 (1995) pp. 777-782
    DOI

  217. Ag-induced multi-step formation on Si(001),
    S. Fölsch, G. Meyer, D. Winau, K.H. Rieder, M. Horn-von Hoegen, T. Schmidt and M. Henzler,
    Appl. Phys. Letters 67 (1995) pp. 2185-2187
    DOI


  218. 1994


  219. Surfactant-mediated growth of Ge on Si(111),
    M. Horn-von Hoegen, M. Copel, J. Tsang, M.C. Reuter and R.M. Tromp,
    Phys. Rev. B 50 (1994) pp. 10811-10822
    DOI

  220. Surfactant-stabilized strained Ge cones on Si(100),
    M. Horn-von Hoegen, A. Al Falou, B.H. Müller, U. Köhler, L. Andersohn, B. Dahlheimer and M. Henzler,
    Phys. Rev. B 49 (1994) pp. 2637-2650
    DOI

  221. Formation of lattice matching interfacial dislocation network in surfactant mediated growth of Ge on Si(111) by an in situ SPA-LEED study,
    M. Horn-von Hoegen,
    Proceedings : 4th international conference on the formation of semiconductor interfaces (ICSFI-4). E (1994)

  222. Lattice matching periodic interfacial dislocation network in surfactant-mediated growth of Ge on Si(111),
    M. Horn-von Hoegen and M. Henzler,
    Phys. Stat. Solidi (a) 146 (1994) pp. 337-352
    DOI

  223. Strain relief by micro roughness in surfactant mediated growth of Ge on Si(001),
    M. Horn-von Hoegen, B. H. Müller and A. Al Falou,
    Phys. Rev. B 50 (1994) pp. 11640-11652
    DOI

  224. Surfactants: Perfect heteroepitaxy of Ge on Si(111),
    M. Horn-von Hoegen,
    Applied Physics A 59 (1994) pp. 503-515
    DOI

  225. Homoepitaxy of Si(111) is surface defect mediated,
    M. Horn-von Hoegen and H. Pietsch,
    Surface Science 321 (1994) pp. 129-136
    DOI

  226. Ge delta-Layers on Si(111) and Si(001) grown by MBE and SPE,
    J. Falta, T. Gog, G. Materlik, B.H. Müller and M. Horn-von Hoegen,
    MRS Proceedings 375 (1994) pp. 177-180
    DOI


  227. 1993


  228. The interplay of surface morphology and strain relief in surfactant mediated growth of Ge on Si(111),
    M. Horn-von Hoegen, M. Pook, A. Al Falou, B. H. Müller and M. Henzler,
    Surface Science 284 (1993) pp. 53-66
    DOI

  229. Surface morphology and strain relief in surfactant mediated growth of Ge on Si(111),
    M. Horn-von Hoegen, M. Pook, A. Al Falou, B. H. Müller and M. Henzler,
    Scanning Microscopy 7 (1993) pp. 481-488
    DOI

  230. Surfactant induced reversible changes of surface morphology,
    M. Horn-von Hoegen, B. H. Müller, A. Al Falou and M. Henzler,
    Physical Review Letters 71 (1993) pp. 3170-3173
    DOI

  231. Formation of the interfacial dislocation network in surfactant-mediated growth of Ge on Si(111) by SPALEED, Part I,
    M. Horn-von Hoegen, A. Al Falou, H. Pietsch, B. H. Müller and M. Henzler,
    Surface Science 298 (1993) pp. 29-42
    DOI


  232. 1992


  233. Layer-by -layer growth of germanium on Si(100): Strain induced morphology and the influence of surfactants,
    U. Köhler, O. Jusko, B. Müller, M. Horn-von Hoegen and M. Pook,
    Ultramicroscopy 42-44 (1992) pp. 832-837
    DOI

  234. Growth of monoatomic layers: investigations with electron diffraction and scanning tunneling microscopy,
    M. Henzler, M. Horn-von Hoegen and U. Köhler,
    Festkörperprobleme 32 (1992) p. 333
    DOI


  235. 1991


  236. Defect self-annihilation in surfactant-mediated epitaxial growth,
    M. Horn-von Hoegen, F.K. LeGoues, M. Copel, M.C. Reuter and R.M. Tromp,
    Physical Review Letters 67 (1991) p. 1130
    DOI

  237. A new two-dimensional particle detector for a toroidal electrostatic analyzer,
    R.M. Tromp, M. Copel, M.C. Reuter, M. Horn-von Hoegen and J. Speidell,
    Rev. Sci. Instrum. 62 (1991) p. 2679
    DOI

  238. Strain-relief mechanism in surfactant-grown epitaxial germanium films on Si(111),
    F.K. LeGoues, M. Horn-von Hoegen, M.Copel and R.M. Tromp,
    Phys. Rev. B 44 (1991) pp. 12894-12902
    DOI


  239. 1990


  240. Influence of surfactants in Ge and Si epitaxy on Si(001),
    M. Copel, M.C. Reuter, M. Horn-von Hoegen and R.M. Tromp,
    Phys. Rev. B 42 (1990) p. 11682
    DOI


  241. 1989


  242. SPA-LEED studies of defects in thin epitaxial NiSi2 layers on Si(111),
    J. Falta, M. Horn and M. Henzler,
    Applied Surface Science 41-42 (1989) pp. 230-235
    DOI

  243. The initial stages of growth of silicon on Si(111) by spot profile analysing low-energy electron diffraction,
    M. Horn-von Hoegen, J. Falta and M. Henzler,
    Thin Solid Films 183 (1989) pp. 213-220
    DOI


  244. 1988


  245. Nucleation and growth during molecular beam epitaxy (MBE) of Si on Si(111),
    R. Altsinger, H. Busch, M. Horn and M. Henzler,
    Surface Science 200 (1988) pp. 235-246
    DOI

  246. Crystal Growth Studies with LEED,
    M. Horn and M. Henzler,
    Proceedings of the 2nd Symposium of Surface Science in Kaprun, Österreich (1988)

  247. LEED investigations of Si MBE on Si(100),
    M. Horn, U. Gotter and M. Henzler,
    Proc. NATO-Workshop on RHEED and Reflection Electron Imaging of Surfaces. Eds.: P.K.Larsen und P.J.D 188 (1988)
    DOI

  248. Low-energy electron diffraction investigations of Si molecular-beam epitaxy on Si(100),
    M. Horn, U. Gotter and M. Henzler,
    J. Vac. Sci. Technol. B 6 (1988) pp. 727-730
    DOI


  249. 1987


  250. LEED studies of Si molecular beam epitaxy on Si(111),
    M. Horn and M. Henzler,
    Journal of Crystal Growth 81 (1987) pp. 428-433
    DOI