3. Reactions with main group metal complexes

3. Reactions with main group metal complexes

(ddp)M (M = Al, Ga, In) were found to show promising capabilities in metal-carbon bond insertion reactions. For instance, (ddp)Ga readily reacts with Et3In with formation of (ddp)EtGaInEt2 containing a Ga-In bond and both group 13 metal in the formal oxidation state +2. At elevvated temperatures, (ddp)EtGaInEt2 decomposes with formation of elemental indium and Et3In, most likely via formation of a monovalent InREt species.[12]

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Scheme 3:Insertion reaction of (ddp)Ga into an In-C bond.

A comparable reaction mechanism was found for the reaction of (ddp)M with Et3Bi.[13]

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Scheme 4:Insertion reaction of (ddp)Ga into a Bi-C bond.

In addition to metal-carbon insertion reactions, reactions with group 15 metal amides were also investigated. (ddp)Ga reacts with Sb(NMe2)3 with insertion into the Sb-N bond and elimination of (ddp)Ga(NMe2)2, yielding the gallium-substituted distibene [(ddp)(NMe2)GaSb]2 1.[14]

 

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Scheme 5: Synthesis and molecular structure of a Ga-substituted distibene [(ddp)(NMe2)GaSb]2.

Thermolysis of 1 proceeded with elimination of (ddp)Ga and (ddp)Ga(NMe2)2 and subsequent formation of the bicyclo[1,1,0]butane analogue [(ddp)(NMe2)Ga]2Sb4 3.[14]

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Scheme 6:Synthesis and molecular structure of a bicyclo[1,1,0]butane analogue [(ddp)(NMe2)Ga]2Sb4 3.

Finally, (ddp)M (M = Al, Ga) were shown to react with low-valent group 15 compounds with insertion into the metal-metal bond. (ddp)Al reacts with E2Et4 (E = Sb, Bi) with subsequent formation of (ddp)Al(EEt2)2, while the analogues reactions of (ddp)Ga with E2Et4 yield a temperature-dependent equilibrium between (ddp)Ga(EEt2)2 and the starting material.[15]

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Scheme 7:Insertion reactions of (ddp)Ga into the Sb-Sb and Bi-Bi bond of distibines and dibismuthines.

A comparable reaction was observed for m(ddp)Ga with monvalent group 16 compounds such as Ph2Te2, which also occurred with insertion into the Te-Te bond, while the reaction with i-Pr2Te proceeded with insertion into the Te-C bond.[16]

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Scheme 8:Insertion reactions of (ddp)Ga into the Te-Te and Te-C bonds.

References

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[16] S. Schulz, C. Ganesamoorty, G. Bendt, D. Bläser, C. Wölper Dalton Trans., 2015, 44, 5153.