Publications
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On the publication and document server of the University of Duisburg-Essen you will find all completed dissertations in the field of components of high-frequency electronics / semiconductor technology
Publications BHE
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Experimental and Theoretical Investigation of Collector Spacer and Doping Profile on Triple‐Barrier Resonant Tunneling DiodesIn: Physica Status Solidi (A) - Applications and Materials Science (2023) in pressISSN: 1862-6300; 1862-6319; 1521-396X; 0031-8965Online Full Text: dx.doi.org/ (Open Access)
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Large-Signal Device Model Verification for Resonant Tunneling Diode OscillatorIn: 2023 Sixth International Workshop on Mobile Terahertz Systems (IWMTS) / Sixth International Workshop on Mobile Terahertz Systems (IWMTS), 03-05 July 2023, Bonn, Germany 2023ISBN: 979-8-3503-2115-9; 979-8-3503-2116-6Online Full Text: dx.doi.org/
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Average Harvested Power in THz WPT Systems Employing Resonant-Tunnelling DiodesIn: 2023 Sixth International Workshop on Mobile Terahertz Systems (IWMTS) / Sixth International Workshop on Mobile Terahertz Systems (IWMTS), 03-05 July 2023, Bonn, Germany 2023ISBN: 979-8-3503-2115-9; 979-8-3503-2116-6Online Full Text: dx.doi.org/
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High saturation photocurrent THz waveguide-type MUTC-photodiodes reaching mW output power within the WR3.4 bandIn: Optics Express (OpEx) Vol. 31 (2023) Nr. 4, pp. 6484 - 6498ISSN: 1094-4087Online Full Text: dx.doi.org/ (Open Access)
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Local optical analysis of InGaN/GaN nanorod LED structures grown on Si(111)In: Journal of Applied Physics Vol. 134 (2023) Nr. 4,ISSN: 0021-8979; 1089-7550Online Full Text: dx.doi.org/
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Terahertz Sources and Receivers : From the Past to the FutureIn: IEEE Journal of Microwaves Vol. 3 (2023) Nr. 3, pp. 894 - 912ISSN: 2692-8388Online Full Text: dx.doi.org/ (Open Access)
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Design and Characterization of Terahertz CORPS Beam Forming NetworksIn: Journal of Infrared, Millimeter, and Terahertz Waves Vol. 44 (2023) Nr. 5-6, pp. 430 - 457ISSN: 1866-6892; 1866-6906Online Full Text: dx.doi.org/ (Open Access)
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Towards Continuous Real-Time Plant and Insect Monitoring by Miniaturized THz SystemsIn: IEEE Journal of Microwaves Vol. 3 (2023) Nr. 3, pp. 913 - 937ISSN: 2692-8388Online Full Text: dx.doi.org/ (Open Access)
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Compensating Probe Misplacements in On-Wafer S -Parameters MeasurementsIn: IEEE Transactions on Microwave Theory and Techniques (T-MTT) Vol. 70 (2022) Nr. 11, pp. 5213 - 5223ISSN: 0018-9480; 1557-9670Online Full Text: dx.doi.org/ (Open Access)
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Monolithic n+-InGaAs Thin Film Resistor from DC up to 0.5 THzIn: 2022 Fifth International Workshop on Mobile Terahertz Systems (IWMTS): Proceedings / Fifth International Workshop on Mobile Terahertz Systems (IWMTS), 04.-06.07.2022, Duisburg 2022Online Full Text: dx.doi.org/
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On-Wafer Characterization and Modelling of InP Resonant Tunnelling Diodes up to 500 GHzIn: Proceedings of the 52nd European Microwave Conference (EuMC) / 52nd European Microwave Conference (EuMC): 27-29 September 2022; Milan, Italy 2022ISBN: 978-2-8748-7069-9; 978-1-6654-5881-8Online Full Text: dx.doi.org/
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Electrical Properties of the Base-Substrate Junction in Freestanding Core-Shell NanowiresIn: Advanced Materials Interfaces Vol. 9 (2022) Nr. 30,ISSN: 2196-7350Online Full Text: dx.doi.org/ (Open Access)
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FR4 Test Board for Measurements on InP Resonant Tunneling Diode THz Oscillators Integrated via Flip Chip Bonding TechnologyIn: 2022 15th UK-Europe-China Workshop on Millimetre-Waves and Terahertz Technologies (UCMMT) / UCMMT2022: 15th UK-Europe-China Workshop on Millimeter-Waves and Terahertz Technologies; 17-18 October 2022; Tønsberg, Norway (online) / Institute of Electrical and Electronics Engineers (IEEE) (Eds.) 2022ISBN: 978-1-6654-9310-9; 978-1-6654-9311-6Online Full Text: dx.doi.org/
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An Injection-Lockable InP-DHBT Source Operating at 421 GHz with -2.4 dBm Output Power and 1.7% DC-to-RF EfficiencyIn: 2022 IEEE/MTT-S International Microwave Symposium / 2022 IEEE/MTT-S International Microwave Symposium, 19-24 June 2022, Denver / Institute of Electrical and Electronics Engineers (IEEE) (Eds.) 2022, pp. 336 - 339ISBN: 978-1-6654-9613-1Online Full Text: dx.doi.org/
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Transfer-Substrate Process for InP RTD-Oscillator CharacterizationIn: 2022 Fifth International Workshop on Mobile Terahertz Systems (IWMTS): Proceedings / Fifth International Workshop on Mobile Terahertz Systems (IWMTS), 04.-06.07.2022, Duisburg 2022Online Full Text: dx.doi.org/
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Triple Barrier Resonant Tunneling Diodes for THz emission and sensingIn: Proceedings of the SPIE Optical Engineering + Applications Conference 2022: Terahertz Emitters, Receivers, and Applications / Razeghi, Manijeh; Baranov, Alexei N.; SPIE Optical Engineering + Applications Conference 2022; 21 - 22 August 2022; San Diego, USA 2022ISBN: 9781510654440; 9781510654457Online Full Text: dx.doi.org/
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TCAD Simulation of InP DHBTs With an In53.2Ga46.8As Base and InGaAsP Collector GradingIn: 2022 Fifth International Workshop on Mobile Terahertz Systems (IWMTS): Proceedings / Fifth International Workshop on Mobile Terahertz Systems (IWMTS), 04.-06.07.2022, Duisburg 2022Online Full Text: dx.doi.org/
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Broadband THz detection using InP triple-barrier resonant tunneling diode with integrated antennaIn: Proceedings of the 4th International Workshop on Mobile Terahertz Systems / IWMTS 2021; 5-6 July 2021; Essen, Germany 2021ISBN: 978-1-7281-8439-5; 978-1-7281-8440-1Online Full Text: dx.doi.org/
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A Modular MIMO Millimeter-Wave Imaging Radar System for Space Applications and Its ComponentsIn: Journal of Infrared, Millimeter and Terahertz Waves Vol. 42 (2021) Nr. 3, pp. 275 - 324ISSN: 1866-6906; 1866-6892Online Full Text: dx.doi.org/
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Design of a 1-to-4 subarray element for wireless subharmonic injection in the THz bandIn: Proceedings of the 4th International Workshop on Mobile Terahertz Systems / IWMTS 2021; 5-6 July 2021; Essen, Germany 2021ISBN: 978-1-7281-8439-5; 978-1-7281-8440-1Online Full Text: dx.doi.org/ Online Full Text (Open Access)
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Ohmic Contacts Optimisation for High-Power InGaAs/AlAs Double-Barrier Resonant Tunnelling Diodes Based on a Dual-Exposure E-Beam Lithography ApproachIn: International Journal of Nanoelectronics and Materials Vol. 14 (2021) Nr. Special Issue InCAPE, pp. 11 - 19ISSN: 2232-1535; 1985-5761(Open Access)
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Connecting Chips With More Than 100 GHz BandwidthIn: IEEE Journal of Microwaves Vol. 1 (2021) Nr. 1, pp. 364 - 373ISSN: 2692-8388Online Full Text: dx.doi.org/ (Open Access)
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Polarity-controlled AlN/Si templates by in situ oxide desorption for variably arrayed MOVPE-GaN nanowiresIn: Journal of Crystal Growth Vol. 566-567 (2021) pp. 126162ISSN: 0022-0248; 1873-5002Online Full Text: dx.doi.org/
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THz detectors and emitters with On-Chip antenna aligned on hyper-hemispherical silicon lensesIn: Proceedings of the 4th International Workshop on Mobile Terahertz Systems / IWMTS 2021; 5-6 July 2021; Essen, Germany 2021ISBN: 978-1-7281-8439-5; 978-1-7281-8440-1Online Full Text: dx.doi.org/ Online Full Text (Open Access)
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There is Plenty of Room for THz Tunneling Electron Devices Beyond the Transit Time LimitIn: IEEE Electron Device Letters Vol. 42 (2021) Nr. 2, pp. 224 - 227ISSN: 1558-0563; 0741-3106Online Full Text: dx.doi.org/ (Open Access)
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Tunneling-Related Leakage Currents in Coaxial GaAs/InGaP Nanowire Heterojunction Bipolar TransistorsIn: Physica Status Solidi (B): Basic Solid State Physics Vol. 258 (2021) Nr. 2, pp. 2000395ISSN: 0370-1972; 1521-3951Online Full Text: dx.doi.org/ (Open Access)
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Growth of site- And polarity-controlled GaN nanowires on Silicon for high-speed LEDsIn: 8th GMM-Workshops on Micro-Nano-Integration / Virtual, Online; ; 15 - 17 September 2020 2020, pp. 60 - 64ISBN: 9783800753277
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InP HBT technology for THz applicationsIn: IEEE International Symposium on Radio-Frequency Integration Technology / RFIT 2020; Hiroshima, Japan; 2 - 4 September 2020 2020, pp. 190 - 192ISBN: 9781728165066Online Full Text: dx.doi.org/
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Design of a 300 GHz externally Injection-Lockable Push-Push Oscillator for Beam Steering ApplicationsIn: 3rd International Workshop on Mobile Terahertz Systems / IWMTS 2020; Essen, Germany; 1-2 July 2020 2020, pp. 9166388ISBN: 978-1-7281-5598-2; 978-1-7281-5599-9Online Full Text: dx.doi.org/
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Design of an RF-power amplifier and optimization of the thermal propertiesDuisburg, Essen (2020)Online Full Text: dx.doi.org/ Online Full Text (Open Access)
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Hot electrons in a nanowire hard X-ray detectorIn: Nature Communications Vol. 11 (2020) Nr. 1, pp. 4729ISSN: 2041-1723Online Full Text: dx.doi.org/ (Open Access)
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Large-Signal Modelling of sub-THz InP Triple-Barrier Resonant Tunneling DiodesIn: 3rd International Workshop on Mobile Terahertz Systems / IWMTS 2020; Essen, Germany; 1-2 July 2020 2020, pp. 9166270ISBN: 978-1-7281-5598-2; 978-1-7281-5599-9Online Full Text: dx.doi.org/
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A systematic study of Ga- And N-polar GaN nanowire-shell growth by metal organic vapor phase epitaxyIn: CrystEngComm Vol. 22 (2020) Nr. 33, pp. 5522 - 5532ISSN: 1466-8033Online Full Text: dx.doi.org/
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Toward mobile integrated electronic systems at THz frequenciesIn: Journal of Infrared, Millimeter, and Terahertz Waves Vol. 41 (2020) Nr. 7, pp. 846 - 869ISSN: 1866-6906; 1866-6892Online Full Text: dx.doi.org/
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Spatially controlled VLS epitaxy of gallium arsenide nanowires on gallium nitride layersIn: CrystEngComm Vol. 22 (2020) Nr. 7, pp. 1239 - 1250ISSN: 1466-8033Online Full Text: dx.doi.org/
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Subharmonic Injection Locking for Phase and Frequency Control of RTD-Based THz OscillatorIn: IEEE Transactions on Terahertz Science and Technology Vol. 10 (2020) Nr. 2, pp. 221 - 224ISSN: 2156-342XOnline Full Text: dx.doi.org/ (Open Access)
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The accurate predictions of THz quantum currents requires a new displacement current coefficient instead of the traditional transmission oneIn: 3rd International Workshop on Mobile Terahertz Systems / IWMTS 2020; Essen, Germany; 1-2 July 2020 2020, pp. 9166410ISBN: 978-1-7281-5598-2; 978-1-7281-5599-9Online Full Text: dx.doi.org/
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n-Doped InGaP Nanowire Shells in GaAs/InGaP Core–Shell p–n JunctionsIn: Physica Status Solidi (B): Basic Solid State Physics Vol. 257 (2020) Nr. 2, pp. 1900358ISSN: 1521-3951; 0370-1972Online Full Text: dx.doi.org/ (Open Access)
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Mask-less MOVPE of arrayed n-GaN nanowires on site- and polarity-controlled AlN/Si templatesIn: CrystEngComm Vol. 21 (2019) Nr. 48, pp. 7476 - 7488ISSN: 1466-8033Online Full Text: dx.doi.org/
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A 0.5 THz Signal Source with -11 dBm Peak Output Power Based on InP DHBTIn: 49th European Microwave Conference / EuMC 2019, 29 Sept. - 4 Oct. 2019, Paris, France 2019, pp. 856 - 859ISBN: 978-2-87487-055-2; 978-1-7281-1798-0Online Full Text: dx.doi.org/
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A 0.5 THz Signal Source with -11 dBm Peak Output Power Based on InP DHBTIn: 14th European Microwave Integrated Circuits Conference / EuMW 2019, 29 Sep - 4 Oct 2019, Paris 2019, pp. 302 - 305ISBN: 978-1-7281-0768-4; 978-2-87487-056-9Online Full Text: dx.doi.org/
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Broadband detection capability of a triple barrier resonant tunneling diodeIn: 2nd International Workshop on Mobile Terahertz Systems / IWMTS 2019; Bad Neuenahr, Germany; 1 - 3 July 2019 2019, pp. 8823724ISBN: 978-1-7281-1271-8; 978-1-7281-1270-1; 978-1-7281-1272-5Online Full Text: dx.doi.org/
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Indiumphosphid-Resonante Tunneldioden für THz-AnwendungenIn: MikroSystemTechnik Kongress 2019: Mikroelektronik | MEMS-MOEMS | Systemintegration – Säulen der Digitalisierung und künstlichen Intelligenz / 28. – 30. Oktober 2019 in Berlin 2019, pp. 400 - 403ISBN: 978-3-8007-5129-7; 978-3-8007-5090-0
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Characterization of the Effective Tunneling Time and Phase Relaxation Time in Triple-Barrier Resonant Tunneling DiodesIn: Compound Semiconductor Week 2019 (CSW): Proceedings / CSW 2019; Nara, Japan; 19 - 23 May 2019 2019, pp. 8819043ISBN: 978-1-7281-0080-7; 978-1-7281-0079-1; 978-1-7281-0081-4Online Full Text: dx.doi.org/
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Transmitarray element design for subharmonic injection-locked RTD oscillators in THz bandIn: Progress in Electromagnetics Research Symposium - Fall (PIERS - FALL): Proceedings / Fall 2019; Xiamen, China; 17 - 20 December 2019 2019, pp. 2518 - 2522ISBN: 978-17281-5304-9; 978-1-7281-5305-6Online Full Text: dx.doi.org/ Online Full Text (Open Access)
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Charge transport in GaAs nanowires : Interplay between conductivity through the interior and surface conductivityIn: Journal of Physics: Condensed Matter Vol. 31 (2019) Nr. 7,ISSN: 1361-648X; 0953-8984Online Full Text: dx.doi.org/
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Experimental evidence for the separation of thermally excited bipolar charge carries within a p-n junction : A new approach to thermoelectric materials and generatorsIn: Journal of Applied Physics Vol. 125 (2019) Nr. 18, pp. 184502ISSN: 0021-8979; 1089-7550Online Full Text: dx.doi.org/
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Thermally stable iridium contacts to highly doped p-In₀:₅₃Ga₀:₄₇As for indium phosphide double heterojunction bipolar transistorsIn: Microelectronic Engineering Vol. 215 (2019) pp. 111017ISSN: 0167-9317; 1873-5568Online Full Text: dx.doi.org/
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NiCr resistors for terahertz applications in an InP DHBT processIn: Microelectronic Engineering Vol. 208 (2019) pp. 1 - 6ISSN: 0167-9317; 1873-5568Online Full Text: dx.doi.org/
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Toward Nanowire HBT : Reverse Current Reduction in Coaxial GaAs/InGaP n(i)p and n(i)pn Core-Multishell NanowiresIn: Physica Status Solidi (A): Applications and Materials Science Vol. 216 (2019) Nr. 1, pp. 1800562ISSN: 1862-6319; 1862-6300Online Full Text: dx.doi.org/
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Triple-barrier resonant tunneling diode
1st MARIE IRTG Spring School, International Research Training Group (IRTG), DFG CRC/TRR 196 MARIE, 28-29 March 2019, Dortmund, Germany,(2019) -
Triple-Barrier Resonant-Tunnelling Diode THz Detectors with on-chip antennaIn: GeMiC 2019 - 12th German Microwave Conference / GeMiC 2019; Stuttgart, Germany; 25 - 27 March 2019 2019, pp. 17 - 19ISBN: 978-3-9812668-9-4; 978-3-9820397-0-1; 978-1-7281-0242-9Online Full Text: dx.doi.org/
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Process Development for Wet-Chemical Surface Functionalization of Gallium Arsenide Based NanowiresIn: Physica Status Solidi (B): Basic Solid State Physics (2019) pp. 1800678ISSN: 1521-3951; 0370-1972Online Full Text: dx.doi.org/
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A Highly Efficient Ultrawideband Traveling-Wave Amplifier in InP DHBT TechnologyIn: IEEE Microwave and Wireless Components Letters Vol. 28 (2018) Nr. 11, pp. 1029 - 1031ISSN: 1531-1309; 1558-1764Online Full Text: dx.doi.org/
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An Ultra-Broadband Low-Noise Distributed Amplifier in InP DHBT TechnologyIn: Proceedings of the 13th European Microwave Integrated Circuits Conference / EuMIC 2018; Madrid, Spain; 24 - 25 September 2018 2018, pp. 241 - 244ISBN: 978-2-87487-052-1; 978-1-5386-5286-2Online Full Text: dx.doi.org/
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220–325 GHz high-isolation SPDT switch in InP DHBT technologyIn: Electronics Letters Vol. 54 (2018) Nr. 21, pp. 1222 - 1224ISSN: 0013-5194; 1350-911XOnline Full Text: dx.doi.org/
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An Ultra-broadband Low-Noise Distributed Amplifier in InP DHBT TechnologyIn: Proceedings of the 48th European Microwave Conference / EuMC 2018; Madrid, Spain; 25 - 27 September 2018 2018, pp. 1209 - 1212ISBN: 978-2-87487-051-4; 978-2-87487-050-7; 978-1-5386-5285-5Online Full Text: dx.doi.org/
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A 95 GHz bandwidth 12 dBm output power distributed amplifier in InP-DHBT technology for optoelectronic applicationsIn: GeMiC 2018 - 11th German Microwave Conference / GeMiC 2018; Freiburg, Germany; 12 - 14 March 2018 2018, pp. 17 - 20ISBN: 978-3-9812668-8-7; 978-1-5386-3740-1Online Full Text: dx.doi.org/
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Broadband millimeter-wave detector based on triple-barrier resonant tunneling diode and tailored archimedian spiral antennaIn: Proceedings of 2017 Asia-Pacific Microwave Conference (APMC) / APMC 2017, 13. - 16. November 2017, Kuala Lumpur, Malaysia / Pasya, Idnin; Seman, Fauziahanim Che (Eds.) 2018, pp. 775 - 778ISBN: 978-1-5386-0640-7Online Full Text: dx.doi.org/ Online Full Text (Open Access)
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EM simulation assisted parameter extraction for transferred-substrate InP HBT modelingIn: Mineralogical Magazine Vol. 10 (2018) Nr. 5-6, pp. 700 - 708ISSN: 1471-8022; 0026-461XOnline Full Text: dx.doi.org/ (Open Access)
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Highly Efficient D-Band Fundamental Frequency Source Based on InP-DHBT TechnologyIn: Proceedings of the 48th European Microwave Conference / EuMC 2018; Madrid, Spain; 25 - 27 September 2018 2018, pp. 1005 - 1008ISBN: 978-2-87487-051-4; 978-2-87487-050-7; 978-1-5386-5285-5Online Full Text: dx.doi.org/
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A Hetero-Integrated W-Band Transmitter Module in InP-on-BiCMOS TechnologyIn: Proceedings of the 13th European Microwave Integrated Circuits Conference / EuMIC 2018; Madrid, Spain; 24 - 25 September 2018 2018, pp. 97 - 100ISBN: 978-2-87487-052-1; 978-1-5386-5286-2Online Full Text: dx.doi.org/
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On the sensitivity of triple-barrier resonant-tunneling (sub-) mm-wave detectors
Progress in Electromagnetics Research Symposium, 2018, Toyama, Japan,Toyama (2018) -
Transferred-Substrate InP/GaAsSb Heterojunction Bipolar Transistor Technology With fmax ~ 0.53 THzIn: IEEE Transactions on Electron Devices (T-ED) Vol. 65 (2018) Nr. 9, pp. 3704 - 3710ISSN: 1557-9646; 0018-9383Online Full Text: dx.doi.org/ (Open Access)
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Germanium Template Assisted Integration of Gallium Arsenide Nanocrystals on Silicon : A Versatile Platform for Modern Optoelectronic MaterialsIn: Advanced Optical Materials Vol. 6 (2018) Nr. 8,ISSN: 2195-1071Online Full Text: dx.doi.org/
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Millimeter-wave Signal Generation and Detection via the same Triple Barrier RTD and on-chip AntennaIn: Proceedings of the 1st International Workshop on Mobile Terahertz Systems / IWMTS 2018, Duisburg, Germany, 2 - 4 July 2018 2018, pp. 8454700ISBN: 978-1-5386-1221-7; 978-1-5386-1220-0; 978-1-5386-1222-4Online Full Text: dx.doi.org/ Online Full Text (Open Access)
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Polarity- and Site-Controlled Metal Organic Vapor Phase Epitaxy of 3D-GaN on Si(111)In: Physica Status Solidi (B): Basic Solid State Physics Vol. 255 (2018) Nr. 5, pp. 1700485ISSN: 0370-1972; 1521-3951Online Full Text: dx.doi.org/
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Through Silicon via (TSV) Process for Suppression of Substrate Modes in a Transferred‐Substrate InP DHBT MMIC Technology
45th International Symposium on Compound Semiconductors, CSW 2018; Boston, USA; 29.05. - 01.06.2018,Boston (2018) -
THZ Indium Phosphide Integrated Heterojunction Bipolar Transistor Technology for mm-Wave Beam Steering Appliccations
The 8th ESA Workshop on Millimetre-Wave Technology and Applications; ESA-ESTEC; Noordwijk, the Netherlands; 10.12 - 12.12.2018,Noordwijk (2018) -
Subharmonic signal generation and injection locking in resonant-tunneling-diode Terahertz oscillator
79th Japan Society of Applied Physics (JSAP 2018) Autumn Meeting, Nagoya Congress Center, Nagoya, Japan Sept. 18-21, 2018,Nagoya (2018) -
Investigation of charge carrier depletion in freestanding nanowires by a multi-probe scanning tunneling microscopeIn: Nano Research Vol. 11 (2018) Nr. 11, pp. 5924 - 5934ISSN: 1998-0000; 1998-0124Online Full Text: dx.doi.org/
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Triple barrier RTD integrated in a slot antenna for mm-wave signal generation and detectionIn: Compound Semiconductor Week (CSW 2018) / 14th Int. Symposium on Compound Semiconductors (ISCS), and the 30th Int. Conference on Indium Phosphide and Related Materials (IPRM), May 29 – June 1, 2018, Massachussetts Institute of Technology (MIT), Cambridge, MA, USA 2018, pp. 54
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An efficient W-band InP DHBT digital power amplifierIn: International Journal of Microwave and Wireless Technologies Vol. 9 (2017) Nr. 6, pp. 1241 - 1249ISSN: 1759-0795; 1759-0787Online Full Text: dx.doi.org/
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EM simulation assisted parameter extraction for the modeling of transferred-substrate InP HBTsIn: Proceedings of the 12th European Microwave Integrated Circuits Conference / EuMIC 2017; Nuremburg; Germany; 9 - 12 October 2017 2017, pp. 240 - 243ISBN: 9782874870484Online Full Text: dx.doi.org/
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Flip-Chip Approach for 500 GHz Broadband InterconnectsIn: IEEE Transactions on Microwave Theory and Techniques Vol. 65 (2017) Nr. 4, pp. 1215 - 1225ISSN: 0018-9480; 1557-9670Online Full Text: dx.doi.org/
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Frequency locking of a free running resonant tunneling diode oscillator by wireless sub-harmonic injection locking
UCMMT 2017 - UK-Europe-China Workshop on Millimetre-Waves and Terahertz Technologies, 11.-13. September 2017, Liverpool, UK,Liverpool (2017) -
Tight Focus Toward the Future: Tight Material Combination for Millimeter-Wave RF Power Applications : InP HBT SiGe BiCMOS Heterogeneous Wafer-Level IntegrationIn: IEEE Microwave Magazine Vol. 18 (2017) Nr. 2, pp. 74 - 82ISSN: 1527-3342; 1557-9581Online Full Text: dx.doi.org/
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Manufacturable low-cost flip-chip mounting technology for 300-500-GHz assembliesIn: IEEE Transactions on Components, Packaging and Manufacturing Technology Vol. 7 (2017) Nr. 4, pp. 494 - 501ISSN: 2156-3950; 2156-3985Online Full Text: dx.doi.org/
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An active balanced up-converter module in InP-on-BiCMOS technologyIn: IEEE MTT-S International Microwave Symposium / IMS 2017; Honololu, United States; 4 - 9 June 2017 2017, pp. 953 - 956ISBN: 9781509063604Online Full Text: dx.doi.org/
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Comparative analysis on resistance profiling along tapered semiconductor nanowires : Multi-tip technique versus transmission line methodIn: Journal of Physics: Condensed Matter Vol. 29 (2017) Nr. 39,ISSN: 1361-648X; 0953-8984Online Full Text: dx.doi.org/
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Performance study of a 248 GHz voltage controlled hetero-integrated source in InP-on-BiCMOS technologyIn: International Journal of Microwave and Wireless Technologies Vol. 9 (2017) Nr. 2, pp. 259 - 268ISSN: 1759-0795; 1759-0787Online Full Text: dx.doi.org/
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Frequency locking of a free running resonant tunneling diode oscillator by wire-less sub-harmonic injection lockingIn: 10th UK-Europe-China Workshop on Millimetre Waves and Terahertz Technologies, UCMMT 2017 / UCMMT 2017; Liverpool, United Kingdom; 11 - 13 September 2017 2017, pp. 8068485ISBN: 978-1-5386-2720-4; 978-1-5386-2721-1Online Full Text: dx.doi.org/
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Noise modeling of transferred-substrate InP-DHBTsIn: IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems / COMCAS 2017; Tel-Aviv, Israel; 13 - 15 November 2017 2017, pp. 1 - 4ISBN: 978-1-5386-3169-0; 978-1-5386-3168-3; 978-1-5386-3170-6Online Full Text: dx.doi.org/
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Signatures of interaction-induced helical gaps in nanowire quantum point contactsIn: Nature Physics Vol. 13 (2017) Nr. 6, pp. 563 - 568ISSN: 1745-2481; 1745-2473Online Full Text: dx.doi.org/
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Modeling of electron beam induced GaAs nanowire attractionIn: Abstractband: MiFuN: Microstructural Functionality at the Nanoscale / International Workshop on Microstructural Functionality at the Nanoscale (MiFuN 2017), 4. - 6. Oktober 2017, Duisburg 2017
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Ballistic and spin transport in InAs nanowiresIn: Nanotechnology Materials and Devices Conference: conference proceedings / IEEE Nanotechnology Materials and Devices Conference, Toulouse, France, 2016, October 9th-12th 2016ISBN: 978-1-5090-4352-1; 978-1-5090-4353-8Online Full Text: dx.doi.org/
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Erratum: Electrical characterization and transport model of n-gallium nitride nanowiresIn: Applied Physics Letters (APL) Vol. 108 (2016) Nr. 4, pp. 082103ISSN: 0003-6951; 1077-3118Online Full Text: dx.doi.org/
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Adiabatic edge channel transport in a nanowire quantum point contact registerIn: Nano Letters Vol. 16 (2016) Nr. 7, pp. 4569 - 4575ISSN: 1530-6992; 1530-6984Online Full Text: dx.doi.org/
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Ballistic Transport and Exchange Interaction in InAs Nanowire Quantum Point ContactsIn: Nano Letters Vol. 16 (2016) Nr. 5, pp. 3116 - 3123ISSN: 1530-6992; 1530-6984Online Full Text: dx.doi.org/
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Modelling of electron beam induced nanowire attractionIn: Journal of Applied Physics Vol. 119 (2016) Nr. 14, pp. 145101ISSN: 0021-8979; 1089-7550Online Full Text: dx.doi.org/
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A new temperature noise model of HFET with special emphasis on a gate-leakage current and investigation of the bias dependence of the equivalent noise sourcesIn: 25th European Microwave Conference: Volume 1 / EuMC 1995; Bologna, Italy; 4 September 1995 2015, pp. 205 - 210ISBN: 9780000000002Online Full Text: dx.doi.org/
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Controlling the polarity of metalorganic vapor phase epitaxy-grown GaP on Si(111) for subsequent III-V nanowire growthIn: Applied Physics Letters (APL) Vol. 106 (2015) Nr. 23, pp. 231601ISSN: 0003-6951; 1077-3118Online Full Text: dx.doi.org/
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High-Speed GaN/GaInN Nanowire Array Light-Emitting Diode on Silicon(111)In: Nano Letters Vol. 15 (2015) Nr. 4, pp. 2318 - 2323ISSN: 1530-6992; 1530-6984Online Full Text: dx.doi.org/
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Direct calculation of the HBT small-signal equivalent circuit with special emphasize to the feedback capacitanceIn: 25th European Microwave Conference: Volume 2 / EuMC 1995; Bologna, Italy; 4 September 1995 2015, pp. 1032 - 1036ISBN: 9780000000002Online Full Text: dx.doi.org/
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Electrical characterization and transport model of n-gallium nitride nanowiresIn: Applied Physics Letters (APL) Vol. 107 (2015) Nr. 8, pp. 082103ISSN: 0003-6951; 1077-3118Online Full Text: dx.doi.org/
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Effect of contaminations and surface preparation on the work function of single layer MoS₂In: Beilstein Journal of Nanotechnology Vol. 5 (2014) Nr. 1, pp. 291 - 297ISSN: 2190-4286Online Full Text: dx.doi.org/ (Open Access)
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Propagation of Microwaves in MMICs Studied by Time- and Frequency-Domain Electro-Optic Field MappingIn: Optical sensors: part of Advanced photonics ; 27 - 31 July 2014, Barcelona, Spain / Optics InfoBase, 27 - 31 July 2014, Barcelona 2014, pp. 190 - 195ISBN: 978-1-55752-820-9Online Full Text: dx.doi.org/
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The effect of the inversion channel at the AlN/Si interface on the vertical breakdown characteristics of GaN-based devicesIn: Semiconductor Science and Technology Vol. 29 (2014) Nr. 11, pp. 115012ISSN: 1361-6641; 0268-1242Online Full Text: dx.doi.org/
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Characterization and modeling of zero bias RF-detection diodes based on triple barrier resonant tunneling structuresIn: International Conference on Indium Phosphide and Related Materials (IPRM), 2013 / International Conference on Indium Phosphide and Related Materials (IPRM), 2013 : 19 - 23 May 2013, Kobe, Japan 2013ISBN: 9781467361309; 978-1-4673-6131-6; 978-1-4673-6132-3 ISSN: 1092-8669Online Full Text: dx.doi.org/
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Effect of AIN layer thickness on wafer bowing and vertical breakdown voltage of GaN-on-Si
European Workshop on MOVPE and Rel. Growth Techniques (EW MOVPE), Aachen, Germany, 02.06.2013 - 05.06.2013,Aachen, Germany (2013) -
Investigation of the doping profile of Zn-doped GaAs nanowires by a multitip STM
European Workshop on MOVPE and Rel. Growth Techniques (EW MOVPE), Aachen, Germany, 02.06.2013 - 05.06.2013,Aachen, Germany (2013) -
III-V-Semiconductor nanowires for the fabrication of optoelectronic and electronic devicesIn: 71st Annual Device Research Conference (DRC), 2013 / 71st Annual Device Research Conference (DRC), 2013 : 23 - 26 June 2013, The University of Notre Dame, Notre Dame 2013, pp. 11ISBN: 978-1-4799-0813-4; 9781479908110; 978-1-4799-0814-1Online Full Text: dx.doi.org/
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Junction field-effect transistor based on GaAs core-shell nanowiresIn: International Conference on Indium Phosphide and Related Materials (IPRM), 2013 / International Conference on Indium Phosphide and Related Materials (IPRM), 2013 : 19 - 23 May 2013, Kobe, Japan 2013ISBN: 978-1-4673-6130-9; 978-1-4673-6131-6 ISSN: 1092-8669Online Full Text: dx.doi.org/
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Nano und Energie ≠ NanoEnergie : Anwendungen von Nanokonzepten in der PhotovoltaikIn: Unikate: Berichte aus Forschung und Lehre (2013) Nr. 43: NanoEnergie : Materialentwicklung für eine nachhaltige Energieversorgung, pp. 76 - 87ISBN: 978-3-934359-43-7 ISSN: 0944-6060; 1869-3881Online Full Text: dx.doi.org/ Online Full Text (Open Access)
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Resistance and dopant profiling along freestanding GaAs nanowiresIn: Applied Physics Letters (APL) Vol. 103 (2013) Nr. 14, pp. 143104ISSN: 0003-6951; 1077-3118Online Full Text: dx.doi.org/
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Triple barrier resonant tunneling diodes for microwave signal generation and detectionIn: European Microwave Integrated Circuits Conference 2013 / EuMIC 2013; 6 - 8 Oct. 2013; Nuremberg, Germany 2013, pp. 228 - 231ISBN: 978-1-4799-0266-8; 978-2-87487-032-3
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Radiation hardness of graphene and MoS2 field effect devices against swift heavy ion irradiationIn: Journal of Applied Physics Vol. 113 (2013) Nr. 21, pp. 214306ISSN: 0021-8979; 1089-7550Online Full Text: dx.doi.org/ (Open Access)
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Recombination dynamics in single GaAs-nanowires with an axial heterojunction : N- versus p-doped areasIn: Journal of Applied Physics Vol. 113 (2013) Nr. 17, pp. 174303-1 - 174303-5ISSN: 0021-8979; 1089-7550Online Full Text: dx.doi.org/
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Direct determination of minority carrier diffusion lengths at axial GaAs nanowire p-n junctionsIn: Nano Letters Vol. 12 (2012) Nr. 3, pp. 1453 - 1458ISSN: 1530-6992; 1530-6984Online Full Text: dx.doi.org/
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Optimized RTD-HBT VCO design based on large signal transient simulationsIn: International Conference on Indium Phosphide and Related Materials / IPRM 2012; Santa Barbara, United States; 27 - 30 August 2012 2012, pp. 32 - 35ISBN: 978-1-4673-1724-5; 978-1-4673-1725-2Online Full Text: dx.doi.org/
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An InAs nanowire spin transistor with subthreshold slope of 20mV/decIn: 70th Annual Device Research Conference (DRC), 2012 / Annual Device Research Conference, 18 - 20 June 2012, The Pennsylvania State University, University Park, Pennsylvania 2012, pp. 79 - 80ISBN: 978-1-4673-1163-2; 978-1-4673-1161-8; 978-1-4673-1164-9 ISSN: 1548-3770Online Full Text: dx.doi.org/
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Analysis of terahertz zero bias detectors by using a triple-barrier resonant tunneling diode integrated with a self-complementary bow-tie antennaIn: 70th Annual Device Research Conference (DRC), 2012 / Annual Device Research Conference, 18 - 20 June 2012, The Pennsylvania State University, University Park, Pennsylvania 2012, pp. 77 - 78ISBN: 978-1-4673-1163-2; 978-1-4673-1161-8; 978-1-4673-1164-9 ISSN: 1548-3770Online Full Text: dx.doi.org/
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Far-field imaging for direct visualization of light interferences in GaAs nanowiresIn: Nano Letters Vol. 12 (2012) Nr. 10, pp. 5412 - 5417ISSN: 1530-6992; 1530-6984Online Full Text: dx.doi.org/
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III-V Semiconductor Nanowire TransistorsIn: Advances in III-V Semiconductor Nanowires and Nanodevices / Wang, Deli; Li, Jianye (Eds.) 2012, pp. 129 - 144ISBN: 978-1-60805-415-2; 978-1-60805-052-9Online Full Text: dx.doi.org/
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Sensitive high frequency envelope detectors based on triple barrier resonant tunneling diodesIn: International Conference on Indium Phosphide and Related Materials / IPRM 2012; Santa Barbara, United States; 27 - 30 August 2012 2012, pp. 36 - 39ISBN: 978-1-4673-1724-5; 978-1-4673-1725-2Online Full Text: dx.doi.org/
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Comparison of InAs nanowire conductivity : Influence of growth method and structureIn: Physica Status Solidi (C): Current Topics in Solid State Physics Vol. 9 (2012) Nr. 2, pp. 230 - 234ISSN: 1862-6351; 1610-1642; 1610-1634Online Full Text: dx.doi.org/
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Imaging of waveguiding and scattering interferences in individual GaAs nanowires via second-harmonic generationIn: Nanophotonics IV / Andrews, David L.; Nanophotonics, 15 - 19 April 2012, Brussels, Belgium 2012ISBN: 978-0-8194-9116-9 ISSN: 0277-786XOnline Full Text: dx.doi.org/
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Scalable electrical properties of axial GaAs nanowire pn-diodesIn: Journal of Electronic Materials (JEM) Vol. 41 (2012) Nr. 5, pp. 809 - 812ISSN: 0361-5235; 1543-186XOnline Full Text: dx.doi.org/
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InAs nanowire circuits fabricated by field-assisted self-assembly on a host substrateIn: IEICE Transactions C: IEICE Transactions on Electronics Vol. E95-C (2012) Nr. 8, pp. 1369 - 1375ISSN: 1745-1353; 0916-8524Online Full Text: dx.doi.org/ (Open Access)
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N-GaAs/InGaP/p-GaAs core-multishell nanowire diodes for efficient light-to-current conversionIn: Advanced Functional Materials Vol. 22 (2012) Nr. 5, pp. 929 - 936ISSN: 1616-301X; 1616-3028Online Full Text: dx.doi.org/
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III/V Nanowires for electronic and optoelectronic applicationsIn: Nanoparticles from the gas phase: formation, structure, properties / Lorke, Axel (Eds.) 2012, pp. 357 - 385ISBN: 978-3-642-28545-5; 978-3-642-28546-2Online Full Text: dx.doi.org/
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Single GaAs nanowire photovoltaic devices under very high power illuminationIn: International Conference on Indium Phosphide and Related Materials / IPRM 2012; Santa Barbara, United States; 27 - 30 August 2012 2012, pp. 253 - 256ISBN: 978-1-4673-1724-5Online Full Text: dx.doi.org/
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A precise optical determination of nanoscale diameters of semiconductor nanowiresIn: Nanotechnology Vol. 22 (2011) Nr. 38, pp. 385201ISSN: 1361-6528; 0957-4484Online Full Text: dx.doi.org/
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Ohmic contacts to n-GaAs nanowiresIn: Journal of Applied Physics Vol. 110 (2011) Nr. 1, pp. 014305ISSN: 0021-8979; 1089-7550Online Full Text: dx.doi.org/
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Planar-defect characteristics and cross-sections of 〈001〉, 〈111〉, and 〈112〉 InAs nanowiresIn: Journal of Applied Physics Vol. 109 (2011) Nr. 11, pp. 114320ISSN: 0021-8979; 1089-7550Online Full Text: dx.doi.org/ (Open Access)
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Gold catalyst initiated growth of GaN nanowires by MOCVDIn: Physica Status Solidi (C): Current Topics in Solid State Physics Vol. 8 (2011) Nr. 7-8, pp. 2315 - 2317ISSN: 1862-6351; 1610-1642; 1610-1634Online Full Text: dx.doi.org/
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Spatially resolved photoelectric performance of axial GaAs nanowire pn-diodesIn: Nano Research Vol. 4 (2011) Nr. 10, pp. 987 - 995ISSN: 1998-0000; 1998-0124Online Full Text: dx.doi.org/
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ICP-RIE etching of self-aligned InP based HBTs with Cl₂/N ₂ chemistryIn: Microelectronic Engineering Vol. 88 (2011) Nr. 7, pp. 1601 - 1605ISSN: 0167-9317; 1873-5568Online Full Text: dx.doi.org/
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Optical properties of heavily doped GaAs nanowires and electroluminescent nanowire structuresIn: Nanotechnology Vol. 22 (2011) Nr. 8, pp. 085702ISSN: 1361-6528; 0957-4484Online Full Text: dx.doi.org/
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Axial pn-junctions formed by MOVPE using DEZn and TESn in vaporliquidsolid grown GaAs nanowiresIn: Journal of Crystal Growth Vol. 315 (2011) Nr. 1, pp. 143 - 147ISSN: 0022-0248; 1873-5002Online Full Text: dx.doi.org/
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The optoelectronic performance of axial and radial GaAs nanowire pn-diodesIn: 23rd International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM 2011; May 22 - 26, 2011; Berlin, Germany 2011, pp. 276 - 278ISBN: 978-3-8007-3356-9; 978-1-4577-1753-6
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Spatially resolved photovoltaic performance of axial GaAs nanowire pn-diodesIn: 2011 69th Annual Device Research Conference (DRC 2011) / Annual Device Research Conference, Santa Barbara, California, USA, 20 - 22 June 2011 2011, pp. 53 - 54ISBN: 978-1-61284-243-1; 978-1-61284-241-7Online Full Text: dx.doi.org/
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High performance submicron RTD design for mm-wave oscillator applicationsIn: 23rd International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM 2011; May 22 - 26, 2011; Berlin, Germany 2011, pp. 133 - 136ISBN: 978-1-4577-1753-6; 978-3-8007-3356-9
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n-Type doping of vapor–liquid–solid grown GaAs nanowiresIn: Nanoscale Research Letters Vol. 6 (2011) Nr. 1, pp. 65ISSN: 1931-7573; 1556-276XOnline Full Text: dx.doi.org/ (Open Access)
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Design of low-power RTD-based-VCOs for Ka-band applicationIn: German Microwave Conference Digest of Papers / GeMiC 2010; Berlin, Germany; 15 - 17 March 2010 2010, pp. 39 - 42ISBN: 978-1-4244-4933-0; 978-3-9812-6681-8
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Tailoring the properties of semiconductor nanowires using ion beamsIn: Physica Status Solidi (B): Basic Solid State Physics Vol. 247 (2010) Nr. 10, pp. 2329 - 2337ISSN: 0370-1972; 1521-3951Online Full Text: dx.doi.org/
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Scalable high-current density RTDs with low series resistanceIn: International Conference on Indium Phosphide & Related Materials (IPRM), 2010: Conference Proceedings / International Conference on Indium Phosphide & Related Materials, May 31, 2010 - June 4, 2010, Takamatsu Symbol Tower, Kagawa, Japan 2010, pp. 358 - 361ISBN: 978-1-4244-5919-3; 978-1-4244-5920-9Online Full Text: dx.doi.org/
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Fabrication and RF performance of InAs Nanowire FETIn: Device Research Conference (DRC), 2010 / Device Research Conference, 21 - 23 June 2010, The University of Notre Dame, Notre Dame, Indiana 2010, pp. 279 - 282ISBN: 978-1-4244-7870-5; 978-1-4244-6562-0 ISSN: 1548-3770Online Full Text: dx.doi.org/
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III-V-Nanowire FET
Symposium on Opto- and Microelectronic Devices and Circuits 2010 (SODC), Berlin, Germany, 04.10.2010 - 07.10.2010,Berlin, Germany (2010) -
High-Frequency Measurements on InAs Nanowire Field-Effect Transistors using Coplanar Waveguide ContactsIn: IEEE Transactions on Nanotechnology Vol. 9 (2010) Nr. 4, pp. 432 - 437ISSN: 1536-125X; 1941-0085Online Full Text: dx.doi.org/
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InP-Based Unipolar Heterostructure Diode for Vertical Integration, Level Shifting, and Small Signal RectificationIn: EICE Transactions C: IEICE Transactions on Electronics Vol. E93-C (2010) Nr. 8, pp. 1309 - 1314ISSN: 1745-1353; 0916-8524Online Full Text: dx.doi.org/
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1.3-μm GaNAsSb-GaAs UTC-photodetectors for 10-gigabit ethernet linksIn: IEEE Photonics Technology Letters Vol. 21 (2009) Nr. 13, pp. 911 - 913ISSN: 1041-1135; 1941-0174Online Full Text: dx.doi.org/
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Alignment of semiconductor nanowires using ion beamsIn: Small Vol. 5 (2009) Nr. 22, pp. 2576 - 2580ISSN: 1613-6810; 1613-6829Online Full Text: dx.doi.org/
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14-GHz GaNAsSb unitraveling-carrier 1.3-μm photodetectors grown by RF plasma-assisted nitrogen molecular beam epitaxyIn: IEEE Electron Device Letters Vol. 30 (2009) Nr. 6, pp. 590 - 592ISSN: 0741-3106; 1558-0563Online Full Text: dx.doi.org/
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Wavelength-selective receiver for simultaneous λ=1.3 μm and λ=1.55 μm RF optical transmissionIn: International Conference on Indium Phosphide & Related Materials: Conference Proceedings / IPRM 2009; Newport Beach, United States; 10 - 14 May 2009 2009, pp. 295 - 297ISBN: 978-1-4244-3432-9; 978-1-4244-3433-6Online Full Text: dx.doi.org/
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Axial doping profile in VLS grown GaAs:Zn nanowires
13th European Workshop on Metalorganic Vapor Phase Epitaxy, 7. – 10. Juni 2009, Ulm, Germany,(2009) -
Controllable p -type doping of GaAs nanowires during vapor-liquid-solid growthIn: Journal of Applied Physics Vol. 105 (2009) Nr. 2, pp. 024305ISSN: 0021-8979; 1089-7550Online Full Text: dx.doi.org/
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Material and doping transitions in single GaAs-based nanowires probed by Kelvin probe force microscopyIn: Nanotechnology Vol. 20 (2009) Nr. 38, pp. 385702ISSN: 1361-6528; 0957-4484Online Full Text: dx.doi.org/
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Large-signal performance of resonant tunnelling diodes in K-Band oscillatorsIn: Proceedings of the 38th European Microwave Conference / EuMC 2008; Amsterdam, Netherlands; 27 - 31 October 2008 2008, pp. 1469 - 1472ISBN: 978-2-87487-006-4Online Full Text: dx.doi.org/
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P -type doping of GaAs nanowiresIn: Applied Physics Letters (APL) Vol. 92 (2008) Nr. 16, pp. 163107ISSN: 0003-6951; 1077-3118Online Full Text: dx.doi.org/
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Surface-recombination-free InGaAs/InP HBTs and the base contact recombinationIn: Solid State Electronics Vol. 52 (2008) Nr. 7, pp. 1088 - 1091ISSN: 0038-1101; 1879-2405Online Full Text: dx.doi.org/
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High frequency characterisation of single inas nanowire field-effect transistorsIn: 20th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM 2008; Versailles, France; 25 - 29 May 2008 2008, pp. 4703003ISBN: 978-1-4244-2258-6; 978-1-4244-2259-3Online Full Text: dx.doi.org/
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Monostable-bistable threshold logic elements in a fully complementary optical receiver circuit for high frequency applicationsIn: 20th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM 2008; Versailles, France; 25 - 29 May 2008 2008, pp. 4702921ISBN: 978-1-4244-2258-6; 978-1-4244-2259-3Online Full Text: dx.doi.org/
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GaAs whiskers grown by metal-organic vapor-phase epitaxy using Fe nanoparticlesIn: Journal of Applied Physics Vol. 101 (2007) Nr. 5, pp. 054318ISSN: 0021-8979; 1089-7550Online Full Text: dx.doi.org/
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Growth and characterisation of GaAs/InGaAs/GaAs nanowhiskers on (1 1 1) GaAsIn: Journal of Crystal Growth Vol. 298 (2007) pp. 607 - 611ISSN: 0022-0248; 1873-5002Online Full Text: dx.doi.org/
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A four-resonant-tunneling-diode (4RTD) NAND/NOR logic gateIn: Proceedings of the IEEE International Symposium on Circuits and Systems / ISCAS 2007; New Orleans, United States; 27 - 30 May 2007 2007, pp. 129 - 132ISBN: 1-4244-0920-9; 1-4244-0921-7Online Full Text: dx.doi.org/
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High-Speed Monostable-Bistable Transition Logic Element Gates with Optical Inputs at 1.3µm/1.55µm
XXII Conference on Design of Circuits and Integrated Systems 2007 (DCIS); Sevilla, Spain; 21.11.2007 - 23.11.2007,Sevilla, Spain (2007) -
High performance III/V RTD and PIN diode on a silicon (001) substrateIn: Applied Physics A: Materials Science and Processing Vol. 87 (2007) Nr. 3, pp. 539 - 544ISSN: 0947-8396; 1432-0630Online Full Text: dx.doi.org/
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Large-signal analysis and ac modelling of sub-micron resonant tunnelling diodesIn: 2nd European Microwave Integrated Circuits Conference: Conference Proceedings / EuMIC 2007; Munich, Germany; 8 - 12 October 2007 2007, pp. 207 - 210ISBN: 978-2-87487-002-6Online Full Text: dx.doi.org/
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High transconductance MISFET with a single InAs nanowire channelIn: IEEE Electron Device Letters Vol. 28 (2007) Nr. 8, pp. 682 - 684ISSN: 0741-3106; 1558-0563Online Full Text: dx.doi.org/
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High-speed picosecond pulse response GaNAsSb p-i-n photodetectors grown by rf plasma-assisted nitrogen molecular beam epitaxy
Microwave Optical Week (MOW), ISIS-IPHOBAC Workshop, 16-18 May 2007, Budapest, Hungary,In: Applied Physics Letters (APL) Vol. 90 (2007) Nr. 18, pp. 183515ISSN: 0003-6951; 1077-3118Online Full Text: dx.doi.org/ -
INP-hemt-tia with differential optical input using vertical high topology pin-diodesIn: 19th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM '07; 14 - 18 May 2007; Matsue, Japan 2007, pp. 107 - 109ISBN: 1-4244-0874-1Online Full Text: dx.doi.org/
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Sub-nanosecond pulse generation using resonant tunneling diodes for impulse radioIn: IEEE International Conference on Ultra-Wideband 2007 / ICUWB; 24 - 27 September 2007; Singapore 2007, pp. 354 - 359ISBN: 978-1-4244-0520-6; 978-1-4244-0521-3Online Full Text: dx.doi.org/
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Investigation of silicon nanowire biosensors using the 2D drift-diffusion modelIn: NSTI Nanotechnology Conference and Trade Show: Technical Proceedings / NSTI Nanotech 2007; Santa Clara, United States; 20 - 24 May 2007 Vol. 2 2007, pp. 542 - 544ISBN: 9781420063493; 9781420063424; 9781420061833
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Integrated InGaAs pin-diode on exactly oriented silicon (001) substrate suitable for 10 Gbit/s digital applicationsIn: 20th Annual Meeting of the IEEE Lasers and Electro-Optics Society: Conference Proceedings / LEOS; Lake Buena Vista, United States; 21 - 25 October 2007 2007, pp. 180 - 181ISBN: 978-1-4244-0924-2Online Full Text: dx.doi.org/
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Modeling the carrier mobility in nanowire channel fetIn: Low-Dimensional Materials: Synthesis, Assembly, Property Scaling and Modeling / MRS Spring Meeting 2007; San Francisco, United States; 9 - 13 April 2007 2007, pp. 139 - 144ISBN: 978-1-60560-423-7Online Full Text: dx.doi.org/
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Sequential mechanism of electron transport in the resonant tunneling diode with thick barriersIn: Semiconductors Vol. 41 (2007) Nr. 2, pp. 227 - 231ISSN: 1063-7826; 1090-6479Online Full Text: dx.doi.org/
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Single n-InAs nanowire MIS-field-effect transistor : Experimental and simulation resultsIn: 19th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM '07; 14 - 18 May 2007; Matsue, Japan 2007, pp. 392 - 395ISBN: 1-4244-0874-1Online Full Text: dx.doi.org/
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Concept and Development of a New Mobile-Gate with All Optical InputIn: German Microwave Conference / GeMic`06; Karslruhe, Germany; 28.03.2006 - 30.03.2006 2006
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A monolithically integrated intensity-independent polarization-sensitive switch operating at 1.3 μm based on ordering in InGaAsPIn: Physica E: Low-Dimensional Systems and Nanostructures Vol. 32 (2006) Nr. 1-2, pp. 554 - 557ISSN: 1386-9477; 1873-1759Online Full Text: dx.doi.org/
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Composition control in metal-organic vapor-phase epitaxy grown InGaAs nanowhiskersIn: Journal of Applied Physics Vol. 100 (2006) Nr. 7, pp. 074321ISSN: 0021-8979; 1089-7550Online Full Text: dx.doi.org/
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European "synQPSK" project : Toward synchronous optical quadrature phase shift keying with DFB lasersIn: Coherent Optical Technologies and Applications / COTA 2006; Whistler, Canada; 25–30 June 2006 2006, pp. CThC4ISBN: 1-55752-809-8Online Full Text: dx.doi.org/ (Open Access)
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Low-temperature DC and RF measurement and modelling of InGaAs-InAlAs resonant tunneling diodes down to 15 KIn: Proceedings of the 1st European Microwave Integrated Circuits Conference / EuMIC 2006; Manchester; United Kingdom; 10 - 13 September 2006 2006, pp. 344 - 347ISBN: 2-9600551-8-7Online Full Text: dx.doi.org/
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Fabrication and electrical characterisation of n-InAs single nanowhisker field-effect transistorsIn: International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM 2006; Princeton; United States; 8 -11 May 2006 2006, pp. 436 - 438ISBN: 0-7803-9558-1Online Full Text: dx.doi.org/
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Improved structure and performance of the GaAsSb/InP interface in a resonant tunneling diodeIn: Journal of Crystal Growth Vol. 287 (2006) Nr. 2, pp. 536 - 540ISSN: 0022-0248; 1873-5002Online Full Text: dx.doi.org/
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Optoelectronic 1:2 demultiplexing based on resonant tunnelling diodes and pin-photodetectorsIn: Electronics Letters Vol. 42 (2006) Nr. 10, pp. 599 - 600ISSN: 0013-5194; 1350-911XOnline Full Text: dx.doi.org/
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Composition Control in MOVPE-Grown InGaAs Nanowhiskers.In: Journal of Applied Physics Vol. 298 (2006) pp. 607 - 611ISSN: 0021-8979; 1089-7550
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Passivation of InP-based HBTsIn: Applied Surface Science Vol. 252 (2006) Nr. 21, pp. 7664 - 7670ISSN: 0169-4332; 1873-5584Online Full Text: dx.doi.org/
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Integrated components for optical QPSK transmissionIn: Frontiers in Optics 2006 / FiO 2006; Rochester, United States; 10 October 2006 2006, pp. FMD4ISBN: 1-55752-818-7Online Full Text: dx.doi.org/
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Single InGaAs nanowhiskers characterized by analytical transmission electron microscopyIn: Phase Transitions Vol. 79 (2006) Nr. 9-10, pp. 727 - 737ISSN: 0141-1594; 1029-0338Online Full Text: dx.doi.org/
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The effect of collector doping on InP-based double heterojunction bipolar transistors
4th International Conference on Electrical and Electronics Engineering (ELECO), Bursa, Turkey, 07.12.2005 - 11.12.2005,In: Turkish Journal of Electrical Engineering & Computer Sciences Vol. 14 (2006) Nr. 3, pp. 429 - 436ISSN: 1300-0632; 1303-6203(Open Access) -
A three-terminal planar selfgating device for nanoelectronic applicationsIn: Solid State Electronics Vol. 49 (2005) Nr. 12, pp. 1990 - 1995ISSN: 0038-1101; 1879-2405Online Full Text: dx.doi.org/
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Bias Dependent Boolean Multivalue Logic Application of Resonant Tunneling Bipolar TransistorsIn: Proceedings of the German Microwave Conference / GeMic 2005, Ulm, Germany, 05.04.2005 - 07.04.2005 2005, pp. 156 - 159
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Characterisation of GaAs nanowhiskers grown on GaAs and Si substratesIn: 17th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM 2005; Glasgow, Scotland; 8 - 12 May 2005 2005, pp. 363 - 366ISBN: 0-7803-8891-7Online Full Text: dx.doi.org/
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Design and modelling of A III/V mobile-gate with optical input on a silicon substrateIn: Conference Proceedings - International Conference on Indium Phosphide and Related Materials / IPRM 2005; Glasgow, Scotland; 8 - 12 May 2005 2005, pp. 17 - 20ISBN: 0-7803-8891-7Online Full Text: dx.doi.org/
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Determination of piezo-electric fields in spontaneously ordered InGaAsPIn: 27th International Conference on the Physics of Semiconductors / ICPS-27, Flagstaff, Arizona, 26 - 30 July 2004 2005, pp. 119 - 120ISBN: 9780735402577Online Full Text: dx.doi.org/
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Fabrication of transferred-substrate HBT with simple technologyIn: 17th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM 2005; Glasgow, Scotland; 8 - 12 May 2005 2005, pp. 508 - 511ISBN: 0-7803-8891-7Online Full Text: dx.doi.org/
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High Performance III/V RTD and PIN Diodes on a silicon substrate
6th Topical Workshop on Heterostructure Microelectronics, TWHM Awaji Island, Hyogo, Japan, Aug. 22-25, 2005,Awaji Island, Hyogo (2005) -
High-speed InP-based resonant tunnelling diode on silicon substrateIn: Proceedings of the 35th European Solid-State Device Research Conference / ESSDERC 2005; Grenoble; France; 12 - 16 September 2005 2005, pp. 257 - 260ISBN: 0-7803-9203-5Online Full Text: dx.doi.org/
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Polarisation-sensitive switch : An integrated intensity-independent solution for 1.3 μm based on the polarisation anisotropy of ordered InGaAsPIn: Physica Status Solidi (A): Applications and Materials Science Vol. 202 (2005) Nr. 6, pp. 992 - 996ISSN: 1862-6300; 1862-6319Online Full Text: dx.doi.org/
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Optimizing lateral HBT design by utilizing performance estimationsIn: 17th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM 2005; Glasgow, Scotland; 8 - 12 May 2005 2005, pp. 441 - 444ISBN: 0-7803-8891-7Online Full Text: dx.doi.org/
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Passivation of InP/GaAsSb/InP double heterostructure bipolar transistors with ultra thin base layer by low-temperature deposited SiNₓIn: Solid State Electronics Vol. 49 (2005) Nr. 3, pp. 409 - 412ISSN: 0038-1101; 1879-2405Online Full Text: dx.doi.org/
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Current gain increase by SiNₓ passivation in self-aligned InGaAs/InP heterostructure bipolar transistor with compositionally graded baseIn: Solid State Electronics Vol. 48 (2004) Nr. 9, pp. 1637 - 1641ISSN: 0038-1101; 1879-2405Online Full Text: dx.doi.org/
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Comparison of the passivation effects on self- and non-self-aligned InP/InGaAs/InP double heterostructure bipolar transistors by low-temperature deposited SiNₓIn: Journal of Applied Physics Vol. 96 (2004) Nr. 1, pp. 777 - 783ISSN: 0021-8979; 1089-7550Online Full Text: dx.doi.org/
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Growth and characterization of InAlP/InGaAs double barrier RTDs
12th International Conference on Metalorganic Vapour Phase Epitaxy (MOVPE), Lahaina, Hawaii, USA, 30.05.2004 - 04.06.2004,In: Journal of Crystal Growth Vol. 272 (2004) Nr. 1-4, pp. 555 - 558ISSN: 0022-0248; 1873-5002Online Full Text: dx.doi.org/ -
A nanoparticle-coated nanocrystal-gate for an INP-based heterostructure field-effect transistorIn: 16th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM`04; Kagoshima, Japan; 31 May - 4 June 2004 2004, pp. 435 - 438ISBN: 0-7803-8595-0Online Full Text: dx.doi.org/
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Investigation of the rf-noise behaviour of InP based DHBT with InGaAs base and GaAsSb baseIn: Noise in Devices and Circuits II / Noise in Devices and Cirquits II, 26 - 28 May 2004, Maspalomas, Spain / Danneville, Francois; Bonani, Fabrizio; Deen, M. Jamal; Levinshtein, Michael E. (Eds.) 2004, pp. 164 - 172ISBN: 0-8194-5396-XOnline Full Text: dx.doi.org/
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Manufacturability and electrical characteristics of Si/SiGe interband tunnelling diodesIn: 5th International Conference on Semiconductor Devices and Microsystmes: Conference Proceedings / ASDAM 2004; Slomenice, Slovakia; 17 - 21 October 2004 2004, pp. 29 - 32ISBN: 0-7803-8335-7Online Full Text: dx.doi.org/
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Equivalent circuit of a resonant tunnel InGaAs/InAlAs diode operating at millimetric wavesIn: Journal of Communications Technology and Electronics Vol. 49 (2004) Nr. 7, pp. 833 - 838ISSN: 1064-2269; 1555-6557
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Optical Sensitivity of a Monolithic Integrated InP PIN-HEMT-HBT Transimpedance Amplifier
European Microwave Workshops and Chort Courses, EuMW`04; Amsterdam, The Netherlands; 11.10.2004 - 15.10.2004,Amsterdam, The Netherlands (2004) -
Photoluminescence of GaAs nanowhiskers grown on Si substrateIn: Applied Physics Letters (APL) Vol. 85 (2004) Nr. 26, pp. 6407 - 6408ISSN: 0003-6951; 1077-3118Online Full Text: dx.doi.org/
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Influence of layer structure on the current-voltage characteristics of Si/SiGe interband tunneling diodesIn: Journal of Applied Physics Vol. 96 (2004) Nr. 7, pp. 3848 - 3851ISSN: 0021-8979; 1089-7550Online Full Text: dx.doi.org/
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Study of ohmic contacts and interface layers of carbon doped GaAsSb/InP heterostructures for DHBT application
12th International Conference on Metalorganic Vapour Phase Epitaxy (MOVPE), Lahaina, Hawaii, USA, 30.05.2004 - 04.06.2004,Lahaina, USA (2004) -
Current transport mechanisms and their effects on the performances of InP-based double heterojunction bipolar transistors with different base structuresIn: Applied Physics Letters (APL) Vol. 84 (2004) Nr. 15, pp. 2910 - 2912ISSN: 0003-6951; 1077-3118Online Full Text: dx.doi.org/
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Buffer optimization for InP-on-si (001) quasi-substratesIn: 16th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM`04; Kagoshima, Japan; 31 May - 4 June 2004 2004, pp. 118 - 121ISBN: 0-7803-8595-0Online Full Text: dx.doi.org/
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Disziplin im Nano-Maßstab : Selbstorganisation in Bottom-up-ProzessenIn: Forum Forschung: Das Forschungsmagazin der Universität Duisburg-Essen (2004) Nr. 2003/2004, pp. 88 - 92
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Beiträge der Nanotechnologie zur Errhöhung der Funktionalität und Dichte in der ElektronikIn: Workshop "Kontrollierte Selbstorganisation für zukünftige technische Anwendungen" / Düsseldorf, Germany; 16.06.2003 - 17.06.2003 2004, pp. 34 - 40ISSN: 1436-5929
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Surface recombination mechanism in graded-base InGaAs-InP HBTsIn: IEEE Transactions on Electron Devices (T-ED) Vol. 51 (2004) Nr. 6, pp. 1044 - 1045ISSN: 1557-9646; 0018-9383Online Full Text: dx.doi.org/
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Resonant tunneling diode immedunce dependence analysisIn: Fifth International Kharkov Symposium on Physics and Engineering of Microwaves, Millimeter, and Submillimeter Waves: Symposium Proceedings / MSMW'04; Kharkov, Ukraine; 21 - 26 June 2004 / Kostenko, A.; Nosich, A.I.; Yakovenko, V.F. (Eds.) Vol. 2 2004, pp. 566 - 568ISBN: 0780384113; 9780780384118
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Characterisation of ultra-thin III/V-heterostructures by convergent-beam-electron- and high-resolution-X-ray-diffractionIn: Materials Science and Engineering B: Solid-State Materials for Advanced Technology Vol. 110 (2004) Nr. 2, pp. 161 - 167ISSN: 0921-5107; 1873-4944Online Full Text: dx.doi.org/
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Effects of (NH4)(2)S passivation on the performance of graded-base InGaAs/InP HBTsIn: Physica status solidi A - Applied research Vol. 201 (2004) Nr. 5, pp. 1017 - 1021ISSN: 1521-396X
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Effects of (NH₄)₂S passivation on the performance of graded-base InGaAs/InP HBTsIn: Physica Status Solidi (A): Applications and Materials Science Vol. 201 (2004) Nr. 5, pp. 1017 - 1021ISSN: 0031-8965; 1521-396X; 1862-6319; 1862-6300Online Full Text: dx.doi.org/
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Sulfur and low-temperature SiNₓ passivation of self-aligned graded-base InGaAs/InP heterostructure bipolar transistorsIn: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures Vol. 22 (2004) Nr. 3, pp. 1060 - 1066ISSN: 1071-1023; 2166-2754Online Full Text: dx.doi.org/ (Open Access)
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Tunneling Diodes for Compact High Speed Circuits
3rd Joint Symposium on Opto- and Microelectronic Devices and Circuits (SODC), Wuhan, China, 21.05.2004 - 30.05.2004,Wuhan, China (2004) -
A consistent and scalable PSPICE HFET-model for DC- and S-parameter-simulationIn: IEEE International Conference on Microelectronic Test Structures / ICMTS 2002; Cork, Ireland; 8 - 11 April 2002 2003, pp. 67 - 70ISBN: 0-7803-7464-9Online Full Text: dx.doi.org/
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Growth of highly p-type doped GaAsSb : C for HBT applicationIn: International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM`03; Santa Barbara, USA; 12.05.2003 - 16.05.2003 2003, pp. 575 - 578ISBN: 0-7803-7704-4Online Full Text: dx.doi.org/
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InP based double heterojunction bipolar transistor with carbon doped GaAsSb : C base grown by LP-MOVPEIn: Proceedings of the 11th European GAAS and Related III-V Compounds Application Symposium / GAAS`03; München, Germany; 06.10.2003 - 10.10.2003 2003, pp. 255 - 257
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Mechanism of Current Gain increase of Heterostructure Bipolar Transistors Passivated by Low-Temperature Deposited SiNxIn: Proceedings of the 11th European GAAS and Related III-V Compounds Application Symposium / GAAS`03; München, Germany; 06.10.2003 - 10.10.2003 2003, pp. 259 - 262Online Full Text: dx.doi.org/
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RF- and Noise Modeling of Semiconductor Devices based on InP
ITG Fachtagung 2003,(2003) -
Passivation of graded-base InP/InGaAs/InP double heterostructure bipolar transistors by room-temperature deposited SiNₓIn: International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM`03; Santa Barbara, USA; 12.05.2003 - 16.05.2003 2003, pp. 156 - 159ISBN: 0-7803-7704-4Online Full Text: dx.doi.org/
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Scaling of Small-Signal and RF-Noise Parameters with Respect to the Emitter-Area of Single HBT based on InP
14th Workshop on Semiconductor Modeling and Simulation of Electron Devices (MSED), Barcelona, Spain, 16.10.2003 - 17.10.2003,Barcelona, Spain (2003) -
Circuit and application aspects of tunnelling devices in a MOBILE configurationIn: International Journal of Circuit Theory and Applications Vol. 31 (2003) Nr. 1, pp. 83 - 103ISSN: 0098-9886; 1097-007XOnline Full Text: dx.doi.org/
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MOVPE growth and polarisation dependence of (dis-)ordered InGaAsP PIN diodes for optical fibre applications
Eleventh International Conference on MOVPE XI; Berlin, Germany; 3 - 7 June 2002,In: Journal of Crystal Growth Vol. 248 (2003) pp. 158 - 162ISSN: 0022-0248; 1873-5002Online Full Text: dx.doi.org/ -
Growth of III/V resonant tunnelling diode on Si substrate with LP-MOVPE
Eleventh International Conference on MOVPE XI; Berlin, Germany; 3 - 7 June 2002,In: Journal of Crystal Growth Vol. 248 (2003) pp. 380 - 383ISSN: 0022-0248; 1873-5002Online Full Text: dx.doi.org/ -
Growth of carbon-doped LP-MOVPE InAlAs using non-gaseous sourcesIn: Journal of Crystal Growth Vol. 248 (2003) pp. 130 - 133ISSN: 0022-0248; 1873-5002Online Full Text: dx.doi.org/
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LP-MOVPE growth for high-speed electronic devices on InP
10th European Workshop on MOVPE and Rel. Growth Techniques (EW MOVPE), Leece, Italy, 08.06.2003 - 11.06.2003,Leece, Italy (2003) -
Two-dimensional physical simulation of InGaAs/InP heterostructure bipolar transistors
6th International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, EXMATEC 2002; Budapest; Hungary; 26 - 29 May 2002,In: Physica Status Solidi (C): Current Topics in Solid State Physics (2003) Nr. 3, pp. 922 - 927ISSN: 1610-1634; 1610-1642; 1862-6351Online Full Text: dx.doi.org/ -
Experimental threshold logic implementations based on resonant tunnelling diodesIn: Proceedings of the 9th IEEE International Conference on Electronics, Circuits, and Systems / ICECS 2002; 15 - 18 September 2002; Dubrovnik, Croatia Vol. 2 2002, pp. 669 - 672ISBN: 0-7803-7596-3Online Full Text: dx.doi.org/
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450 GHz millimetre-wave signal from frequency tripler with heterostructure barrier varactors on gold substrateIn: Electronics Letters Vol. 38 (2002) Nr. 13, pp. 657 - 658ISSN: 0013-5194; 1350-911XOnline Full Text: dx.doi.org/
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Asynchronous circuit design based on the RTBT monostable-bistable logic transition element (MOBILE)In: Proceedings of the 15th Symposium on Integrated Circuits and Systems Design / SBCCI 2002; Porto Alegre, Brazil; 9 - 14 September 2002 2002, pp. 365 - 370ISBN: 0-7695-1807-9Online Full Text: dx.doi.org/
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A novel 1.55µm HBT-Electroabsorption modulatorIn: Proceedings of the International Topical Meeting on Microwave Photonics (MWP `01) / MWP `01, 7-9 Jan. 2002, Long Beach, CA, USA 2002, pp. 21 - 24ISBN: 0-7803-7003-1Online Full Text: dx.doi.org/
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Resonant tunnelling diodes for digital circuit applicationsIn: 4th International Conference on Advanced Semiconductor Devices and Microsystems: Conference Proceedings / ASDAM 2002; Smolenice, Slovakia; 14 - 16 October 2002 2002, pp. 115 - 124ISBN: 0-7803-7276-XOnline Full Text: dx.doi.org/
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Different approaches for integrating HBTs and EAMsIn: The 10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications / EDMO 2002 ; 18 - 19 November; Manchester, UK 2002, pp. 149 - 154ISBN: 0-7803-7530-0Online Full Text: dx.doi.org/
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Lithographic Tools for Producing Patterned Films Compsed of Gas Phase Generated Nanocrystals ImpressIn: Material Science and Technology Vol. 18 (2002) Nr. 7, pp. 717 - 720ISSN: 1743-2847; 0267-0836Online Full Text: dx.doi.org/
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Monolithically integrated optoelectronic circuits using HBT, EAM, and TEATIn: Proceedings of the International Topical Meeting on Microwave Photonics (MWP 2002) / MWP 2002, November 5-8, Awaji, Japan 2002, pp. 349 - 352ISBN: 4-88552-187-4
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Spontaneous Group III and V Superlattice Ordering in InGaAsP
International Conference on Signal Processing (ICSP), Beijing, China, 26.08.2002 - 30.08.2002,Beijing, China (2002) -
Deposition of Gas-Phase Generated PbS Nanocrystals onto Patterned Substrates
7th International Conference on Nanometer-scale Science and Technology (Nano), 21th European Conference on Surface Science (ECOSS) , Malmö, Sweden, 24.06.2005 - 28.06.2002,Malmö, Sweden (2002) -
A Consistent PSPICE-Model for InP HBT
13th Workshop on Physical Simulation of Semiconductor Devices (PSSD), Ilkley, West Yorkshire, U.K., 25.03.2002 - 26.03.2002,Ilkley, U.K. (2002) -
Pseudo dynamic gate design based on the Resonant Tunneling-Bipolar Transistor (RTBT)In: Proceedings of the 32nd European Solid-State Device Research Conference / ESSDERC 2002; Firenze, Italy; 24 - 26 September 2002 / Gnani, E.; Baccarani, G.; Rudan, M. (Eds.) 2002, pp. 211 - 214ISBN: 88-900847-8-2Online Full Text: dx.doi.org/
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Spontaneous Group III and V Superlattice Ordering in InGaAsP
26th International Conference on the Physics of Semiconductors (ICPS), Edingburgh, U.K., 29.07.2002 - 02.08.2002,Edingburgh, U.K. (2002) -
RF-Simulation of InGaAs/InP Heterostructure Bipolar Transistors
13th Workshop on Physical Simulation of Semiconductor Devices (PSSD), Ilkley, West Yorkshire, U.K., 25.03.2002 - 26.03.2002,Ilkley, U.K. (2002) -
Waveguide HBT electroabsorption modulators : Devices and circuitsIn: 14th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / Stockholm, Sweden; 12 - 16 May 2002 2002, pp. 123 - 126ISBN: 0-7803-7320-0Online Full Text: dx.doi.org/
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MOVPE growth and polarisation dependence of (dis-)ordered InGaAsP PIN diodes for optical fibre applicationsIn: 14th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / Stockholm, Sweden; 12 - 16 May 2002 2002, pp. 127 - 130ISBN: 0-7803-7320-0Online Full Text: dx.doi.org/
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Waverguide HBT electroabsorption modulators : devices and circuitsIn: Proceedings of the 14th International Conference on Indium Phosphide and Related Materials (IPRM) / IPRM: May 12-16, 2002, Stockholm, Sweden 2002, pp. 123 - 126
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Consistent small-signal and rf-noise parameter modelling of carbon doped InP/InGaAs HBTIn: International IEEE Microwave Symposium Digest / MTT-S 2001; Phoenix, United States; 20 - 25 May 2001 Vol. 1 2001, pp. 1765 - 1768ISBN: 0-7803-6538-0Online Full Text: dx.doi.org/
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Carbon Doped InP/InGaAs HBT : Consistent Small_Signal and RF-Noise Modelling and Characterization
Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Cagliari, Italy, 27.05.2001 - 30.05.2001,Cagliari, Italy (2001) -
A New Consistent and Scalable PSPICE Model for Enhancement and Depletion-Type HFET
11th Conference and Exhibition on Microwaves, Radio Communication and Electromagnetic Compatibility (MIOP), Stuttgart, Germany, 08.05.2001 - 10.05.2001,Stuttgart, Germany (2001) -
Integration of Heterostructure Bipolartransistors with Electroabsorption Waveguide Modulators and Applications
11th European Heterostructure Technology Workshop, Padova, Italien, 28. - 30. Oktober 2001,Padua (2001) -
Nonlinear Effects in the 1/f Noise of a 2D Electron Gas
9th IFAC Symposium on Large Scale Systems: Theory and Applications 2001, Bucharest, Romania, 18-20 July 2001,In: IFAC Proceedings Volumes Vol. 34 (2001) Nr. 8, pp. 319 - 324ISSN: 1474-6670Online Full Text: dx.doi.org/ -
A Consistent and Scalable PSPICE Compound Semiconductor HFET Model for DC- and S-Parameter Simulation
9th European GaAs and other Semiconductor Application Symposium (GAAS AS), London, U.K., 24.09.2001 - 25.09.2001,London, U.K. (2001) -
Integration of heterostructure bipolar transistor and electroabsorption waveguide modulator based on a multifunctional layer design for 1.55μmIn: 13th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM 2001; Nara, Japan; 14.05.2001 - 18.05.2001 2001, pp. 440 - 443ISBN: 0-7803-6700-6Online Full Text: dx.doi.org/
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On the Microscopic Origin of 1/f Noise in Lattice-Matched InAlAs/InGaAs HEMT'sIn: Proceedings of the Romanian Academy Series A: Mathematics Physics Technical Sciences Information Science (2001)ISSN: 1454-9069
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Tunnelling diode technologyIn: Proceedings of the 31s International Symposium on Multiple-Valued Logic / 22-24 May 2001; Warsaw, Poland 2001, pp. 49 - 58ISBN: 0-7695-1083-3Online Full Text: dx.doi.org/
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Demonstration von Heterostruktur-Bipolartransistoren und Elektroabsorptionsmodulatoren auf der Basis eines multifunktionalen Schichtdesigns
65. Physikertagung und Frühjahrstagung des Arbeitskreises Festkörperphysik der DPG, Hamburg, Germany,Hamburg (2001) -
Resonant Tunneling Device Logic : A Circuit Designer's PerspectiveIn: Circuit Paradigm in the 21st Century: ECCTD ’01 ; Proceedings of the 15th European Conference on Circuit Theory ; Helsinki University of Technology, Finland, 28th - 31st August 2001 ; Vol. 1 / European Conference on Circuit Theory and Design (ECCTD) ; 28th - 31st August 2001, Espoo, Finland / Porra, Veikko (Eds.) 2001, pp. 189 - 192ISBN: 951-22-6337-8; 951-22-5572-3
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Unipolar Aerosol Charger for Single Charged Particles 3 to 1000 nm
2nd Asian Aerosol Conference (AAC), Pusan, Korea, 02.07.2001 - 04.07.2001,Pusan, Korea (2001) -
Development of a Nanoparticle Precipitation and Characterization System
Intational Symposium on Nanoparticles: Aeorosols and Materials, Pusan, Korea, 05.07.2001 - 07.07.2001,Pusan, Korea (2001) -
Low-voltage MOBILE logic module based on Si/SiGe interband tunnelling diodesIn: IEEE Electron Device Letters Vol. 22 (2001) Nr. 5, pp. 215 - 217ISSN: 0741-3106; 1558-0563Online Full Text: dx.doi.org/
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Technology of a depth-2 full-adder circuit using the InP RTD/HFET mobileIn: 13th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM 2001; Nara, Japan; 14.05.2001 - 18.05.2001 2001, pp. 228 - 231ISBN: 0-7803-6700-6Online Full Text: dx.doi.org/
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InP-based monolithically integrated RTD/HBT MOBILE for logic circuitsIn: 13th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM 2001; Nara, Japan; 14.05.2001 - 18.05.2001 2001, pp. 232 - 235ISBN: 0-7803-6700-6Online Full Text: dx.doi.org/
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Charge diffusion noise in monocrystalline PbS nanoparticle filmsIn: Applied Physics Letters (APL) Vol. 77 (2000) Nr. 21, pp. 3421 - 3422ISSN: 0003-6951; 1077-3118Online Full Text: dx.doi.org/ (Open Access)
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Digital circuit design based on the resonant-tunneling-hetero-junction-bipolar-transistorIn: Proceedings of the 13th Symposium on Integrated Circuits and Systems Design / SBCCI 2000; Manaus, Brazil; 18 - 24 September 2000 2000, pp. 150 - 155ISBN: 0-7695-0843-XOnline Full Text: dx.doi.org/
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Manufacturability and robust design of nanoelectronic logic circuits based on resonant tunnelling diodesIn: International Journal of Circuit Theory and Applications Vol. 28 (2000) Nr. 6, pp. 537 - 552ISSN: 0098-9886; 1097-007XOnline Full Text: dx.doi.org/
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Resonant-Tunnelling 3-Terminal Devices for High-Speed Logic Application
24th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Aegean Sea, Greece, 29.05.2000 - 02.06.2000,Aegean Sea, Greece (2000) -
InAlAs/InGaAs/InP heterostructures for RTD and HBT device applications grown by LP-MOVPE using non-gaseous sourcesIn: Journal of Crystal Growth Vol. 221 (2000) Nr. 1-4, pp. 722 - 729ISSN: 0022-0248; 1873-5002Online Full Text: dx.doi.org/
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Parallel adder design with reduced circuit complexity using resonant tunneling transistors and threshold logicIn: Analog Integrated Circuits and Signal Processing Vol. 24 (2000) Nr. 1, pp. 7 - 25ISSN: 0925-1030; 1573-1979Online Full Text: dx.doi.org/
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Metalorganic vapour phase epitaxy growth of InP-based heterojunction bipolar transistors with carbon doped InGaAs base using tertiarybutylarsine and tertiarybutylphosphine in N₂ ambientIn: Japanese Journal of Applied Physics Vol. 39 (2000) Nr. 11, pp. 6162 - 6165ISSN: 1347-4065; 0021-4922Online Full Text: dx.doi.org/
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A comparative study of GaAs- and InP-based HBT growth by means of LP-MOVPE using conventional and non gaseous sourcesIn: Progress in Crystal Growth and Characterization of Materials Vol. 41 (2000) Nr. 1-4, pp. 85 - 131ISSN: 0960-8974; 1878-4208Online Full Text: dx.doi.org/
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11-stage ring oscillator with nonlinear negative feedback for high speed digital applicationsIn: International Conference on Indium Phosphide and Related Materials: Conference Proceedings / Williamsburg, USA; 14 -18 May 2000 2000, pp. 577 - 580ISBN: 0-7803-6320-5Online Full Text: dx.doi.org/
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Electro-optical examination of the band structure of ordered InGaAsIn: Applied Physics Letters (APL) Vol. 76 (2000) Nr. 1, pp. 88 - 90ISSN: 0003-6951; 1077-3118Online Full Text: dx.doi.org/
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InP-Based HBT with Graded InGaAlAs Base Layer Grown by LP-MOVPEIn: Proceedings of the European GaAs and other Semiconductor Application Symposium / GAAS AS 2000; Paris, France; 02.10.2000 - 03.10.2000 2000
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High f/sub T/, high current gain InP/InGaAs : C HBT grown by LP-MOVPE with non-gaseous sourcesIn: International Conference on Indium Phosphide and Related Materials: Conference Proceedings / Williamsburg, USA; 14 -18 May 2000 2000, pp. 470 - 472ISBN: 0-7803-6320-5Online Full Text: dx.doi.org/
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Heterostructure bipolartransistor combining electroabsorption waveguide modulator based on a multifunctional layer design for 1.55µm
12th IEEE III-V Semiconductor Device Simulation Workshop in combination with the HBT Workshop, Duisburg, Germany, 2000,Duisburg (2000) -
Hooge parameter of InGaAs bulk material and InGaAs 2DEG quantum well structures based on InP substrates
15th Int. Conf. on Noise in Physical Systems and 1/f Fluctuations, Hongkong, 23.08.1999 - 26.08.1999,In: Microelectronics Reliability Vol. 40 (2000) Nr. 11, pp. 1911 - 1914ISSN: 0026-2714; 1872-941XOnline Full Text: dx.doi.org/ -
LP-MOVPE Growth of Carbon Doped In0.48Ga0.52P/GaAs HBT Using an All-Liquid-Source ConfigurationIn: 26th International Symposium on Compound Semiconductors / ISCS 2000; Berlin, Germany; 22.08.2000 - 26.08.2000 2000
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Threshold logic circuit design of parallel adders using resonant tunneling devices
11th International Symposium on System-Level Synthesis and Design (ISS'98); Hsinchu, Taiwan; 2 - 4 December 1998,In: IEEE Transactions on Very Large Scale Integration (VLSI) Systems Vol. 8 (2000) Nr. 5, pp. 558 - 572ISSN: 1063-8210; 1557-9999Online Full Text: dx.doi.org/ -
A monolithically integrated smart pixel based on a photoconductive switch and a n-i-p-i modulatorIn: Conference on Lasers and Electro-Optics / CLEO '99; Baltimore, USA; 23.05.1999 - 28.05.1999 1999ISBN: 1-55752-595-1Online Full Text: dx.doi.org/
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37-GHz Bandwidth InP-Based Photoreceiver OEIC Suitable for Data Rates up to 50 Gb/sIn: IEEE Photonics Technology Letters Vol. 11 (1999) Nr. 2, pp. 257 - 259ISSN: 1041-1135; 1941-0174Online Full Text: dx.doi.org/
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Extension of the epitaxial shadow mask MBE technique for the monolithic integration and in situ fabrication of novel device structuresIn: Journal of Crystal Growth Vol. 201-202 (1999) pp. 574 - 577ISSN: 0022-0248; 1873-5002Online Full Text: dx.doi.org/
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Logic circuits with reduced complexity based on devices with higher functionalityIn: Proceedings of the 2nd STW Workshop on Semiconductor Advances for Future Electronics / SAFE 99, Mierlo, Netherlands, 24-25 November 1999 1999, pp. 219 - 224
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Resonant tunneling transistors for threshold logic circuit applicationsIn: Proceedings of the 9th IEEE Great Lakes Symposium on VLSI / GLSVLSI '99; Ann Arbor, USA; 4 - 6 March 1999 1999, pp. 344 - 345ISBN: 0-7695-0104-4Online Full Text: dx.doi.org/
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Strain Relaxation During Heteroepitaxy on Twist-Bonded Thin Gallium Arsenide SubstratesIn: MRS (Materials Research Society) Proceedings Vol. 535: III-V and IV-IV Materials and Processing Challenges for Highly Integrated Microelectronics and Optoelectronics (1999) pp. 45ISSN: 0272-9172; 1946-4274Online Full Text: dx.doi.org/
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Winziger als die Mikro-Elektronik
Forum Forschung '99, Gerhard-Mercator-Universität Duisburg, 1999,Duisburg (1999) -
Technology of InP-based 1.55-μm ultrafast OEMMIC's : 40-Gbit/s broad-band and 38/60-GHz narrow-band photoreceiversIn: IEEE Journal of Quantum Electronics Vol. 35 (1999) Nr. 7, pp. 1024 - 1031ISSN: 0018-9197; 1558-1713Online Full Text: dx.doi.org/
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Consistent physical model for the gate-leakage and breakdown in InAlAs/InGaAs HFET'sIn: Proceedings of the 11th International Conference on Indium Phosphide and Related Materials / IPRM`99; Davos, Switz; 16 -20 May 1999 1999, pp. 439 - 442ISBN: 0-7803-5562-8Online Full Text: dx.doi.org/
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All Liquid Source Growth of Carbon Doped In0.53Ga0.47As/InP HBT by Means of LP-MOVPE
8th Europ. Workshop on MOVPE and Rel. Growth Techniques (EW MOVPE), Prag, Czech Republic, 08.06.1999 - 11.06.1999,Prag, Czech Republic (1999) -
Hooge parameter of InP-based 2DEG structures and its dependence on channel design and temperatureIn: The seventh van der ziel symposium on quantum 1/f noise and other low frequency fluctuations in electronic devices / 7. Symposium ; St. Louis, Missouri; 7.-8.8.1998 / Handel, P.H.; Chung, A.L. (Eds.) 1999, pp. 59 - 70Online Full Text: dx.doi.org/ (Open Access)
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Novel MOBILE gates with low-power, relaxed parameter sensitivity, and increased driving capabilityIn: Proceedings of the 11th International Conference on Indium Phosphide and Related Materials / IPRM`99; Davos, Switz; 16 -20 May 1999 1999, pp. 411 - 414ISBN: 0-7803-5562-8Online Full Text: dx.doi.org/
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Electrical Properties of Discontinuous PbS Nanoparticle Films on MSM and MIM DetectorsIn: Book of abstracts / Second Joint NSF-ESF Symposium on Nanoparticles: Technologies and Applications: Tacoma, Washington, USA, October 10, 1999 / Joint NSF-ESF Symposium on Nanoparticles: Technologies and Applications ; (Tacoma, Wash.) : 1999.10.10 / Pui, David H. (Eds.) 1999, pp. P4-1 - P4-4
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High Frequency NoiseIn: Wiley Encyclopedia of Electrical and Electronics Engineering / Webster, John G. (Eds.) Vol. 14 1999, pp. 392 - 410ISBN: 9780471139553
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LP-MOVPE grown GaAs- and InP-based HBTs using all-liquid alternative sourcesIn: Proceedings of the 11th International Conference on Indium Phosphide and Related Materials / IPRM`99; Davos, Switz; 16 -20 May 1999 1999, pp. 467 - 470ISBN: 0-7803-5562-8Online Full Text: dx.doi.org/
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The 1/f noise of InP based 2DEG devices and its dependence on mobilityIn: IEEE Transactions on Electron Devices (T-ED) Vol. 46 (1999) Nr. 1, pp. 194 - 203ISSN: 1557-9646; 0018-9383Online Full Text: dx.doi.org/
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A new consistent rf-and noise model with special emphasis on impact ionisation for dual-gate HFET in cascode configurationIn: 28th European Microwave Conference / EuMC 1998; Amsterdam, Netherlands; 5 - 9 October 1998 Vol. 1 1998, pp. 323 - 327Online Full Text: dx.doi.org/
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A threshold logic full adder based on resonant tunneling transistorsIn: 24th European Solid-State Circuits Conference / ESSCIRC 1998; The Hague; Netherlands; 22 - 24 September 1998 1998, pp. 428 - 431Online Full Text: dx.doi.org/
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InGaP/GaAs hole barrier asymmetry determined by (0 0 2) X-ray reflections and p-type DB-RTD hole transportIn: Journal of Crystal Growth Vol. 195 (1998) Nr. 1-4, pp. 117 - 123ISSN: 0022-0248; 1873-5002Online Full Text: dx.doi.org/
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Analytic simulation of impact ionization in InAlAs/InGaAs HFET'sIn: Proceedings of the 10th International Conference on Indium Phosphide and Related Materials / IPRM`98, Tsukuba, Japan, 11.05.1998 - 15.05.1998 1998, pp. 659 - 662
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InGaP/GaAs shadow-mask for optoelectronic integration and MBE regrowthIn: Journal of Crystal Growth Vol. 195 (1998) Nr. 1-4, pp. 490 - 494ISSN: 0022-0248; 1873-5002Online Full Text: dx.doi.org/
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Fast fabrication of InP-based HBT using a novel coplanar designIn: Electronics Letters Vol. 34 (1998) Nr. 19, pp. 1885 - 1886ISSN: 0013-5194; 1350-911XOnline Full Text: dx.doi.org/ (Open Access)
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Distributed velocity-matched 1.55 μm InP travelling-wave photodetector for generation of high millimeterwave signal powerIn: Proceedings of the 1998 IEEE MTT-S International Microwave Symposium / MTT-S`98, Baltimore, USA, 07.06.1998 - 12.06.1998 Vol. 3 1998, pp. 1233 - 1236
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NAND/NOR logic circuit using single InP-based RTBTIn: Electronics Letters Vol. 34 (1998) Nr. 25, pp. 2390 - 2392ISSN: 0013-5194; 1350-911XOnline Full Text: dx.doi.org/
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Distributed Velocity-matched 1.55um InP Travelling-Wave Photodetector for Generation of High Millimeterwave Signal PowerIn: MTT-S International Microwave Symposium and Exhibition / MTT-S International Microwave Symposium and Exhibition, Baltimore, Maryland, 1998 1998, pp. 1233 - 1236
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InP-based logic gates for low power monolithic optoelectronic circuitsIn: Proceedings of the IEEE International Conference on Electronics, Circuits and Systems / ICECS'98 - Surfing the Waves of Science and Technology; Lisboa, Portugal; 7 - 10 September 1998 Vol. 3 1998, pp. 393 - 396ISBN: 0-7803-5008-1Online Full Text: dx.doi.org/
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Manufacturability of III/V Resonant Tunneling Diodes for Logic Circuit Applications
3rd Workshop on Innovative Circuits and Systems for Nano Electronics (Nano-EL), München, Germany, 05.10.1998 - 06.10.1998,(1998) -
InP-based HFET's and RTD's for high speed digital circuitryIn: Conference Proceedings of the International Symposium on Signals, Systems and Electronics / ISSSE'98; Pisa, Italy; 29 September - 2 October 1998 1998, pp. 45 - 49ISBN: 0-7803-4900-8Online Full Text: dx.doi.org/
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Tunnelstrukturen - Grundlagen und BauelementeIn: Nanostrukturen in Halbleitern / Blockseminar am 1. und 2. Oktober 1997 im Rahmen des Graduiertenkollegs "Metrologie in Physik und Technik" der Technischen Universität Braunschweig und der Physikalisch-Technischen Bundesanstalt Braunschweig / Schlachetzki, Andreas (Eds.) 1998, pp. 19 - 24ISBN: 3-89701-115-8
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A new concept for a monolithically integrated optoelectronic receiver based on a GaAs-PIN-photodiode and a PJBTIn: Proceedings of the 2nd International Conference on Advanced Semiconductor Devices And Microsystems / ASDAM 1998; Smolenice; Slovakia; 5 -7 October 1998 1998, Nr. October, pp. 291 - 294ISBN: 0-7803-4909-1Online Full Text: dx.doi.org/
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HR XRD for the analysis of ultrathin centrosymmetric strained DB-RTD heterostructuresIn: Thin Solid Films Vol. 319 (1998) Nr. 1-2, pp. 25 - 28ISSN: 0040-6090; 1879-2731Online Full Text: dx.doi.org/
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Nonlinear RTD Transmission LinesIn: Proceedings of the 5th International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits / INMMC`98; Duisburg, Germany; 01.10.1998 - 02.10.1998 1998, pp. 82 - 83
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PIN-PJBT Integration : A New GaAs Based Optoelectronic ReceiverIn: Proceedings of the 28th European Solid State Device Research Conference / ESSDERC`98; Bordeaux, France; 08.09.1998 - 10.09.1998 1998, pp. 424 - 427
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Monodisperse aerosol particle deposition : Prospects for nanoelectronicsIn: Microelectronic Engineering Vol. 41-42 (1998) pp. 535 - 538ISSN: 0167-9317; 1873-5568Online Full Text: dx.doi.org/
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27-GHz bandwidth high-speed monolithic integrated optoelectronic photoreceiver consisting of a waveguide fed photodiode and an InAlAs/InGaAs-HFET traveling wave amplifierIn: IEEE Journal of Solid-State Circuits Vol. 32 (1997) Nr. 9, pp. 1394 - 1399ISSN: 0018-9200; 1558-173XOnline Full Text: dx.doi.org/
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Full wave BIE analysis of travelling waves in unbiased/velocity saturated FET structures with linearly controlled current densityIn: 1997 IEEE MTT-S International Microwave Symposium Digest / Denver, USA; 8-13 June 1997 Vol. 1 1997, pp. 159ISBN: 0-7803-3814-6Online Full Text: dx.doi.org/
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A New Optimization Strategy Based on the Theory of Evolution for the RF-Modeling of HFET
International Workshop on Exp. Based FET Device Modell. & Rel. Nonlin. Circuit Design; Kassel, Germany; 17.07.1997 - 18.07.1997,Kassel, Germany (1997) -
Determination of interface composition in III-V heterojunction devices (HBT and RTD) with atomic resolution using STEM techniques
3rd International Workshop on Expert Evaluation & Control of Compound Semicond. Mat. & Technologies (EXMATEC), Freiburg, Germany, 12.05.1996 - 15.05.1996,In: Materials Science and Engineering B Vol. 44 (1997) Nr. 1-3, pp. 52 - 56ISSN: 0921-5107; 1873-4944Online Full Text: dx.doi.org/ -
HR XRD for the Analysis of Ultra-Thin Centro-Symmetric Strained DB-RTD Heterostructures
European Materials Research Conference (E-MRS), Strasbourg, France, 16.06.1997 - 20.06.1997,Strasbourg, France (1997) -
Ultrafast Monolithic InP-Based Photoreceiver Module Detecting 40Gbit/s Optical TDM RZ Modulated Pulse SequenceIn: Proceedings of the 23th European Conference on Optical Communication / ECOC`97; Edingburgh, U.K.; 22.09.1997 - 25.09.1997 1997, pp. 101 - 104
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High-speed Travelling-Wave Photodetectors for Wireless Optical Millimeter Wave TransmissionIn: Proceedings of IEEE International Topical Meeting on Microwave Photonics / MWP '97: from September 3 through 5 at Schloß Hugenpoet, Duisburg/Essen 1997, pp. 103 - 106
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Frequency and time domain characterization of nonlinear transmission lines using electro-optic probing techniques
MIOP ´97, Sindelfingen,Sindelfingen (1997) -
High-Speed Travelling-Wave Photodetectors for Optical Generation of MillimeterwavesIn: Proceedings of the Asia Pacific Microwave Conference / APMC '97, 2-5 Dec. 1997, Hong Kong Vol. 2 1997, pp. 573 - 576
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High-speed travelling-wave photodetectors for optical generation of millimeter wavesIn: Proceedings of 1997 Asia-Pacific Microwave Conference / APMC´97; Hongkong; 02.12.1997 - 05.12.1997 Vol. 2 1997, pp. 573 - 576ISBN: 962-442-117-XOnline Full Text: dx.doi.org/
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3D-Integration of Quantum-Effect Devices (RTD) in HBT's by Means of LP-MOVPE
7th European Workshop on MOVPE and Rel. Growth Techniques (EW MOVPE), Berlin, Germany, 08.06.1997 - 11.06.1997,Berlin, Germany (1997) -
Novel Monolithic RTD/3-Terminal Device Combinations on s.i. InP for Frequency MultiplicationIn: Proceedings of the State-of-the-Art Program of Compound Semiconductors / SOTAPOCS 1997, Montreal, Canada, 04.05.1997 - 09.05.1997 1997, pp. 229 - 241
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A New RF- and Noise Model with Special Emphasis on Impact Ionization for HFET
Conference and Exhibition on Microwaves, Radio Communication and Electromagnetic Compatibility; MIOP 1997; Sindelfingen, Germany; 22.04.1997 - 24.04.1997,Sindelfingen, Germany (1997) -
A novel 3-D integrated RTD-HFET frequency multiplierIn: International Conference on Indium Phosphide and Related Materials 1997: Conference Proceedings / IPRM`97; Cape Cod, USA; 11-15 May 1997 1997, pp. 373ISBN: 0-7803-3898-7 ISSN: 1092-8669Online Full Text: dx.doi.org/
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InAlAs/InGaAs/InP dual-gate-HFET's : New aspects and propertiesIn: International Conference on Indium Phosphide and Related Materials 1997: Conference Proceedings / IPRM`97; Cape Cod, USA; 11-15 May 1997 1997, pp. 181 - 184ISBN: 0-7803-3898-7 ISSN: 1092-8669Online Full Text: dx.doi.org/
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High power InAlAs/InGaAs/InP-HFET grown by MOVPEIn: International Conference on Indium Phosphide and Related Materials 1997: Conference Proceedings / IPRM`97; Cape Cod, USA; 11-15 May 1997 1997, pp. 24 - 27ISBN: 0-7803-3898-7 ISSN: 1092-8669Online Full Text: dx.doi.org/
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Investigation and modeling of impact lonization with regard to the RF and noise behavior of HFETIn: IEEE Transactions on Microwave Theory and Techniques Vol. 45 (1997) Nr. 6, pp. 977 - 983ISSN: 0018-9480; 1557-9670Online Full Text: dx.doi.org/
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Millimeterwave Photodetectors
Conference and Exhibition on Microwaves, Radio Communication and Electromagnetic Compatibility; MIOP 1997; Sindelfingen, Germany; 22.04.1997 - 24.04.1997,Sindelfingen, Germany (1997) -
Modelling intermixing of short period strained layer superlattices by means of X-ray diffraction analysis
3rd International Workshop on Expert Evaluation & Control of Compound Semicond. Mat. & Technologies (EXMATEC), Freiburg, Germany, 12.05.1996 - 15.05.1996,In: Materials Science and Engineering B Vol. 44 (1997) Nr. 1-3, pp. 87 - 90ISSN: 0921-5107; 1873-4944Online Full Text: dx.doi.org/ -
Traveling Wave Amplifier for 20Gb/s Optoelectronic Receivers Based on InAlAs/InGaAs/InP-HFETIn: Proceedings of the Conference and Exhibition on Microwaves, Radio Communication and Electromagnetic Compatibility / MIOP 1997; Sindelfingen, Germany; 22.04.1997 - 24.04.1997 1997, pp. 264 - 268
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Investigation of growth temperature dependent GaInP ordering in different crystal planes using X-ray diffraction and photoluminescence
3rd International Workshop on Expert Evaluation & Control of Compound Semicond. Mat. & Technologies (EXMATEC), Freiburg, Germany, 12.05.1996 - 15.05.1996,In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology Vol. 44 (1997) Nr. 1-3, pp. 91 - 95ISSN: 0921-5107; 1873-4944Online Full Text: dx.doi.org/ -
Modelling imperfections of epitaxial heterostructures by means of X-ray diffraction analysis
3rd European Symposium on X-Ray Topography and High Resolution Diffraction (X-TOP), 22.04.1996 - 24.04.1996, Parma, Italy,In: Il Nuovo Cimento della Società Italiana di Fisica D Vol. 19 (1997) Nr. 2-4, pp. 299 - 304ISSN: 0392-6737; 1826-9893Online Full Text: dx.doi.org/ -
The role of hydrogen in low-temperature MOVPE growth and carbon doping of In₀.₅₃Ga₀.₄₇As for InP-based HBT
8th International Conference on Metalorganic Vapour Phase Epitaxy (MOVPE) (IC MOVPE), Cardiff, U.K., 09.06.1996 - 13.06.1996,In: Journal of Crystal Growth Vol. 170 (1997) Nr. 1-4, pp. 287 - 291ISSN: 0022-0248; 1873-5002Online Full Text: dx.doi.org/ -
Millimeterwave Photodetectors, Microwaves and OptronicsIn: Mikrowellen und Optronik: Kongreßunterlagen / MIOP ’97, 9. Kongreßmesse für Hochfrequenztechnik, Funkkommunikation und elelektromagnetische Verträglichkeit, 22. - 24. April 1997, Sindelfingen, Deutschland 1997ISBN: 978-3-924651-53-4
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Monodisperse Aerosol Particle Deposition : Prospects for NanoelectronicsIn: Micro-and-Nano-Engineering: Book of Abstracts / Micro-and-Nano-Engineering, Athen, September 15-18, 1997 1997
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Theory of Evolution : New Optimization Strategies for the Modeling of HFET-RF-Noise-Parameters
Conference and Exhibition on Microwaves, Radio Communication and Electromagnetic Compatibility; MIOP 1997; Sindelfingen, Germany; 22.04.1997 - 24.04.1997,Sindelfingen, Germany (1997) -
27 GHz bandwidth high speed monolithic integrated optoelectronic photoreceiver consisting of a waveguide fed photodiode and an InAlAs/InGaAs-HFET-traveling wave amplifierIn: Proceedings of the 18th Annual IEEE Gallium Arsenide Integrated Circuit Symposium / Orlando, USA; 3 - 6 November 1996 1996, pp. 258 - 261
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Anomalous impact-ionization gate current in high breakdown InP-based HEMT'sIn: Proceedings of the 26th European Solid-State Device Research Conference / ESSDERC 1996; Bologna, Italy; 9 - 11 September 1996 1996, pp. 1001 - 1004ISBN: 9782863321966 ISSN: 1930-8876
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10 Gb/s low-noise transimpedance amplifier for optoelectronic receivers based on InAlAs/InGaAs/InP HEMTsIn: International Symposium on Electron Devices for Microwave and Optoelectronic Applications / EDMO 1996; Leeds, UK; 25 - 26 November 1996 1996, pp. 575800ISBN: 0-7803-3130-3Online Full Text: dx.doi.org/
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Fabrication and High Frequency Analysis of InAlAs/InGaAs/InP Dual-Gate-HFETs with Special Emphasis to Impact Ionization
European Heterostructure Technology Workshop (HETECH); Lille, France; 15.09.1996 - 17.09.1996,Lille, France (1996) -
Characterization of hydrogen passivation and carbon self-compensation of highly C-doped GaAs by means of x-ray diffractionIn: Journal of Applied Physics Vol. 79 (1996) Nr. 2, pp. 710 - 716ISSN: 0021-8979; 1089-7550Online Full Text: dx.doi.org/
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Design and characterization of integrated probes for millimeter wave applications in scanning probe microscopyIn: Proceedings of the 1996 IEEE MTT-S International Microwave Symposium Digest / San Franscisco, USA; 17 - 21 June 1996 1996, pp. 1529 - 1532ISBN: 0-7803-3246-6 ISSN: 0149-645XOnline Full Text: dx.doi.org/
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InAlAs/InGaAs/InP HFET with suppressed impact ionization using dual-gate cascode-devicesIn: IEEE Electron Device Letters Vol. 17 (1996) Nr. 10, pp. 488 - 490ISSN: 0741-3106; 1558-0563Online Full Text: dx.doi.org/
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Monolithic pin-HEMT 1.55μm photoreceiver on InP with 27GHz bandwidthIn: Electronics Letters Vol. 32 (1996) Nr. 23, pp. 2142 - 2143ISSN: 0013-5194; 1350-911XOnline Full Text: dx.doi.org/
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20 Gbit/s InP-based photoreceiver module: application in nonrepeatered TDM system with 198 km DSFIn: Proceedings of the 22nd European Conference on Optical Communication / ECOC`96; Oslo, Norway; 15 - 19 September 1996 1996, pp. 5.63 - 5.66ISBN: 82-423-0418-1
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A novel 3-D integrated HFET/RTD frequency multiplierIn: IEEE Journal on Selected Topics in Quantum Electronics Vol. 2 (1996) Nr. 3, pp. 650 - 653ISSN: 1077-260X; 1558-4542Online Full Text: dx.doi.org/
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Growth temperature dependent band alignment at the Ga₀.₅₁In₀.₄₉P to GaAs heterointerfacesIn: Journal of Applied Physics Vol. 79 (1996) Nr. 1, pp. 305 - 309ISSN: 0021-8979; 1089-7550Online Full Text: dx.doi.org/
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Ultrafast monolithically integrated InP-based photoreceiver : OEIC-design, fabrication, and system applicationIn: IEEE Journal on Selected Topics in Quantum Electronics Vol. 2 (1996) Nr. 2, pp. 418 - 423ISSN: 1077-260X; 1558-4542Online Full Text: dx.doi.org/
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Investigation and modeling of impact ionization with regard to the RF- and noise behaviour of HFETIn: Proceedings of the 1996 IEEE MTT-S International Microwave Symposium Digest / San Franscisco, USA; 17 - 21 June 1996 1996, pp. 512178ISBN: 0-7803-3246-6 ISSN: 0149-645XOnline Full Text: dx.doi.org/
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Ultrafast GaInAs/AlInAs/InP photoreceiver based on waveguide architectureIn: Proceedings of the 22nd European Conference on Optical Communication / ECOC`96; Oslo, Norway; 15 - 19 September 1996 1996, pp. 1.133 - 1.136ISBN: 82-423-0418-1
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Merged Heterostructure FET/RTD Combination for (Sub-)Millimeter-Wave Generation
4th International Workshop on Terahertz Electronics; Erlangen, Germany; 05.09.1996 - 06.09.1996,Erlangen, Germany (1996) -
27 GHz bandwidth integrated photoreceiver comprising a waveguide fed photodiode and a GaInAs/AlInAs-HEMT based travelling wave amplifierIn: Proceedings of the 54th Annual Device Research Conference Digest / Santa Barbara, USA; 26-26 June 1996 1996, pp. 200 - 201ISBN: 0-7803-3358-6Online Full Text: dx.doi.org/
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Modeling the Potential of Novel 3-D Integrated RTD/HFET Frequency Multiplier Circuits
International Workshop on Millimeterwaves, Orvieto, Italy, 11.04.1996 - 12.04.1996,Orvieto, Italy (1996) -
On the advantages of InAlAs/InGaAs/InP dual-gate-HFET's in comparison to conventional single-gate-HFET'sIn: 8th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / Schwaebisch Gmuend, Germany; 21.04.1996 - 25.04.1996 1996, pp. 462 - 465ISBN: 0-7803-3283-0Online Full Text: dx.doi.org/
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Nonlinear effects in the 1/f noise of lattice-matched InAlAs/InGaAs HEMT’sIn: Proceedings of the '6th Quantum 1/f Noise and other Low Frequency Fluctuations in Electronic Devices Symposium / St.Louis, USA; 27.05.1994 - 28.05.1994 1996, pp. 127ISSN: 0094-243X; 1551-7616Online Full Text: dx.doi.org/
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On the design and modelling of novel 3-D integrated RTD/HBT device frequency multiplier circuitsIn: Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications / EDMO 1996; Leeds, UK; 25 - 26 November 1996 1996, pp. 176 - 181ISBN: 0-7803-3130-3Online Full Text: dx.doi.org/
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On Carbon Doping of InGaAs for InP Based Heterojunction Bipolar Transistors
20th European Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Vilnius, Litauen, 19.05.1996 - 22.05.1996,Vilnius, Litauen (1996) -
High-Speed Photoreceiver by Monolithic Integration of a Waveguide Fed Photodiode and a GaInAs/AlInAs-HEMT Based Distributed Amplifer
8th International Conference on InP and Related Materials (IPRM), Schwaebisch Gmuend, Germany, 21.04.1996 - 25.04.1996,Schwaebisch Gmuend, Germany (1996) -
Characterization and analysis of a new gate leakage mechanism at high drain bias in InAlAs/InGaAs heterostructure field-effect transistorsIn: 8th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / Schwaebisch Gmuend, Germany; 21.04.1996 - 25.04.1996 1996, pp. 650 - 653ISBN: 0-7803-3283-0Online Full Text: dx.doi.org/
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Plasma-CVD für Siliziumnitrid auf III-V Halbleitern
MOCVD- und Plasma-CVD Prozesse für opto- und mikroelektronische Anwendungen; Aachen, Germany; 05.11.1996,Aachen, Germany (1996) -
On the temperature dependence of the impact ionization in HFET and the corresponding RF- and noise performanceIn: 8th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / Schwaebisch Gmuend, Germany; 21.04.1996 - 25.04.1996 1996, pp. 654 - 657ISBN: 0-7803-3283-0Online Full Text: dx.doi.org/
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Development of a low-impedance traveling wave amplifier based on InAlAs/InGaAs/InP-HFET for 20 Gb/s optoelectronic receiversIn: 8th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / Schwaebisch Gmuend, Germany; 21.04.1996 - 25.04.1996 1996, pp. 642 - 645ISBN: 0-7803-3283-0Online Full Text: dx.doi.org/
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The impact of pseudomorphic AlAs spacer layers on the gate leakage current of InAlAs/InGaAs heterostructure field-effect transistorsIn: Microwave and Optical Technology Letters Vol. 11 (1996) Nr. 3, pp. 125 - 128ISSN: 0895-2477; 1098-2760Online Full Text: dx.doi.org/
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40Gb/s optoelektronische Empfänger höchster Empfindlichkeit mit konzentrierten Photo-detektoren und Wanderwellenverstärkern : Designüberlegungen und Entwicklung
Conference and Exhibition on Microwaves, Radio Communication and Electromagnetic Compatibility (MIOP), Sindelfingen, Germany, 30.05.1995 - 01.06.1995,Sindelfingen, Germany (1995) -
Acceptor-hydrogen interaction in ternary III-V semiconductors
18th International Conference on Defects in Semiconductors; Sendai, Japan; 23 - 28 July 1995,In: Materials Science Forum (MSF) Vol. 196-201 (1995) Nr. 2, pp. 987 - 992ISSN: 0255-5476; 1662-9752Online Full Text: dx.doi.org/ -
Carbon-Doping of MOVPE-Grown LT-In0.53Ga0.47As : On the Doping Mechanism and InGaAs/InP HBT Device Characteristics
European Workshop on MOVPE and Rel. Growth Techniques (EW MOVPE), Gent, Belgium, 25.06.1995 - 28.06.1995',Gent, Belgium (1995) -
Determination of CuPt-type ordering in GaInP by means of x-ray diffraction in the skew, symmetric arrangementIn: Applied Physics Letters (APL) Vol. 67 (1995) pp. 2807ISSN: 0003-6951; 1077-3118Online Full Text: dx.doi.org/
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Relaxation mechanisms in 2D electron gas and origin of 1/f noise in HEMT'sIn: Proceedings of the 20th International Conference on Microelectronics: Volume 1 / Nis, Serbia; 12- 14 September 1995 1995, pp. 447 - 452ISBN: 0-7803-2786-1Online Full Text: dx.doi.org/
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Entwicklung eines optoelektronischen Empfängers nach dem Transimpedanzverstärker-prinzip für Bitraten von 500MB/s bis 2,5GB/s und hoher Empfindlichkeit
Conference and Exhibition on Microwaves, Radio Communication and Electromagnetic Compatibility (MIOP), Sindelfingen, Germany, 30.05.1995 - 01.06.1995,Sindelfingen, Germany (1995) -
Ein Temperaturrauschmodell für HFET mit besonderer Berücksichtigung des Einflusses eines Gate-Leckstroms auf das Rauschverhalten
Conference and Exhibition on Microwaves, Radio Communication and Electromagnetic Compatibility (MIOP), Sindelfingen, Germany, 30.05.1995 - 01.06.1995,Sindelfingen, Germany (1995) -
Design methodology, measurement and application of MMIC transmission line transformersIn: Proceedings of IEEE MTT-S International Microwave Symposium Digest: Part 1 / Orlando, USA; 16 -20 May 1995 1995, pp. 1635 - 1638ISBN: 0-7803-2581-8Online Full Text: dx.doi.org/
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Electro-optic probing of RF signals in submicrometre MMIC devicesIn: Electronics Letters Vol. 31 (1995) Nr. 25, pp. 2188 - 2189ISSN: 0013-5194; 1350-911XOnline Full Text: dx.doi.org/
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On the applicability of the transimpedance amplifier concept for 40 Gb/s optoelectronic receivers based on InAlAs/InGaAs heterostructure field effect transistorsIn: Proceedings of ISSE'95 - International Symposium on Signals, Systems and Electronics / 25-27 Oct. 1995; San Francisco, USA 1995, pp. 497971ISBN: 0-7803-2516-8Online Full Text: dx.doi.org/
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Investigation of leakage current behaviour of Schottky gates on InAlAs/InGaAs/InP HFET structures by a 1D modelIn: Solid State Electronics Vol. 38 (1995) Nr. 10, pp. 1775 - 1780ISSN: 0038-1101; 1879-2405Online Full Text: dx.doi.org/
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Room-temperature deposition of SiNx using ECR-PECVD for III/V semiconductor microelectronics in lift-off techniqueIn: Journal of Non-Crystalline Solids Vol. 187 (1995) pp. 334 - 339ISSN: 0022-3093; 1873-4812Online Full Text: dx.doi.org/
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Simulation of Gate Leakage due to Impact Ionization in InAlAs/InGaAs-HFET
4th Int. Seminar on Simulation of Devices and Technologies (ISSDT), Kruger Nat. Park, South Africa, 15.11.1995 - 17.11.1995,Kruger Nat. Park, South Africa (1995) -
High speed, high gain InP-based heterostructure FETs with high breakdown voltage and low leakageIn: 7th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / Sapporo, Japan; 9 - 13 May 1995 1995, pp. 729 - 732
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Characterization of Highly Strained GaxIn1-xP/InP Interfaces (x = 0.5)
9th Conference on Microscopy of Semiconductor Materials, Oxford, U.K., 20.03.1995 - 23.03.1995,Oxford, U.K. (1995) -
A New Noise Model of HFET with Special Emphasis on Gate-LeakageIn: IEEE Electron Device Letters Vol. 16 (1995) Nr. 2, pp. 74 - 76ISSN: 1558-0563; 0741-3106Online Full Text: dx.doi.org/
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New Direct Parameter Extraction Technique for Heterojunction Bipolar Transistors Using an Extended Equivalent Circuit
International Workshop on Semiconductor Characterization, Gaithersburg, USA, 30.01.1995 - 02.02.1995,Gaithersburg, USA (1995) -
Evidence of type-II band alignment at the ordered GaInP to GaAs heterointerfaceIn: Journal of Applied Physics Vol. 77 (1995) Nr. 3, pp. 1154 - 1158ISSN: 0021-8979; 1089-7550Online Full Text: dx.doi.org/
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Impact of pseudomorphic AlAs spacer layers on the gate leakage current of InAlAs/InGaAs heterostructure field-effect transistorsIn: 7th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / Sapporo, Japan; 9 - 13 May 1995 1995, pp. 424 - 427
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Metalorganic vapor phase epitaxial grown heterointerfaces to GaInP with group-III and group-V exchangeIn: Journal of Crystal Growth Vol. 146 (1995) Nr. 1-4, pp. 538 - 543ISSN: 0022-0248; 1873-5002Online Full Text: dx.doi.org/
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InP-based heterostructure field-effect transistors with high-quality short-period (InAs)₃m/(GaAs)₁m superlattice channel layers
8th Int. Conf. on Molecular Beam Epitaxy (MBE) (IC MBE), Osaka, Japan, 29.08.1994 - 02.09.1994,In: Journal of Crystal Growth Vol. 150 (1995) pp. 1225 - 1229ISSN: 0022-0248; 1873-5002Online Full Text: dx.doi.org/ -
A Balanced Ka-Band GaAs FET MMIC Frequency DoublerIn: IEEE Microwave and Guided Wave Letters Vol. 4 (1994) Nr. 7, pp. 217 - 219ISSN: 1051-8207; 1558-2329Online Full Text: dx.doi.org/
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Boundary-integral evaluation analysis of a novel monolithic CPW/TFMS 3-dB quadrature hybridIn: 1994 IEEE MTT-S International Microwave Symposium Digest (Cat. No.94CH3389-4) / San Diego, USA; 23-27 May 1994 1994ISBN: 0-7803-1778-5 ISSN: 0149-645XOnline Full Text: dx.doi.org/
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Analytical model to determine the gate leakage current in i n ₀.₅₂ a l ₀.₄₈ As/In ₓ Ga₁₋ₓ a s pseudomorphic modulation doped field-effect transistors caused by thermionic field emissionIn: Japanese Journal of Applied Physics (JJAP) Vol. 33 (1994) Nr. 4R, pp. 1735 - 1739ISSN: 1347-4065; 0021-4922Online Full Text: dx.doi.org/
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Drastic Reduction of Gate Leakage in InAlAs/InGaAs HEMT’s Using a Pseudomorphic InAlAs Hole Barrier LayerIn: IEEE Transactions on Electron Devices (T-ED) Vol. 41 (1994) Nr. 10, pp. 1685 - 1690ISSN: 1557-9646; 0018-9383Online Full Text: dx.doi.org/
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40 GHz Vertical Electrooptical Fabry-Perot Modulator with Schottky contacts
CLEO/EUROPE `94, Amsterdam, Niederlande, 1994,(1994) -
High breakdown voltage InGaAs/lnAIAs HFET using ln₀.₅Ga₀.₅P spacer layerIn: Electronics Letters Vol. 30 (1994) Nr. 2, pp. 169 - 170ISSN: 0013-5194; 1350-911XOnline Full Text: dx.doi.org/
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Low-pressure metalorganic vapour phase epitaxy growth of InAs/GaAs short period superlattices on InP substrates
7th Int. Conf. on Metalorganic Vapour Phase Epitaxy (MOVPE) (IC MOVPE), Yokohama, Japan, 31.05.1994 - 03.06.1994,In: Journal of Crystal Growth Vol. 145 (1994) Nr. 1-4, pp. 771 - 777ISSN: 0022-0248; 1873-5002Online Full Text: dx.doi.org/ -
X-ray characterization of very thin GaₓIn₁₋ₓP (x ≈ 0.5) layers grown on InP
Int. Workshop on Expert Evaluation & Control of Compound Semicond. Mat. & Technologies (EXMATEC), Parma, Italy, 18.05.1994 - 20.05.1994,In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology Vol. 28 (1994) Nr. 1-3, pp. 188 - 192ISSN: 0921-5107; 1873-4944Online Full Text: dx.doi.org/ -
Highly strained In₀.₅Ga₀.₅P as wide-gap material on InP substrate for heterojunction field effect transistor applicationIn: Journal of Crystal Growth Vol. 145 (1994) Nr. 1-4, pp. 326 - 331ISSN: 0022-0248; 1873-5002Online Full Text: dx.doi.org/
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InAlAs/InGaAs HFET with extremely high device breakdown using an optimized buffer layer structureIn: 6th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / Santa Barbara, USA; 27 - 31 March 1994 1994, pp. 443 - 446ISBN: 0-7803-1476-XOnline Full Text: dx.doi.org/
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InAlAs/InGaAs Heterostrukturen auf InP zur Realisierung optisch steuerbarer Höchstfrequenzleitungen
9. Treffen des DGKK Arbeitskreises "Epitaxie von III/V-Halbleitern", Duisburg, Dezember 1994,(1994) -
Low-pressure metallorganic vapor phase epitaxy (LP-MOVPE) growth and characterization of short-period strained-layer superlattices (SPSLSs) on InP substratesIn: Epitaxial Growth Processes / Los Angeles, USA; 26 - 27 January 1994 1994, pp. 75 - 83ISBN: 0819414352 ISSN: 0277-786X
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Phonon-Induced 1/f Noise in InAlAs/InGaAs HEMTs
17th International Semiconductor Conference (CAS), Sinaia, Romania, 11.10.1994 - 16.10.1994,Sinaia, Romania (1994) -
Two-dimensional mapping of amplitude and phase of microwave fields inside a MMIC using the direct electro-optic sampling techniqueIn: Proceedings of the IEEE MTT-S International Microwave Symposium Digest / San Diego, USA; 23-27 May 1994 Vol. 3 1994, pp. 1597 - 1600ISBN: 0780317793 ISSN: 0149-645XOnline Full Text: dx.doi.org/
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X-ray diffraction characterization of highly strained InAs and GaAs layers on InP grown by metalorganic vapor-phase epitaxyIn: Journal of Applied Physics Vol. 75 (1994) Nr. 5, pp. 2426 - 2433ISSN: 0021-8979; 1089-7550Online Full Text: dx.doi.org/ (Open Access)
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Realization of highly strained short period InAs/GaAs superlattices by means of LP-MOVPE growth on InP substratesIn: 6th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / Santa Barbara, USA; 27 - 31 March 1994 1994, pp. 579 - 580
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In₀.₅Ga₀.₅ spacer layer for high drain breakdown voltage InGaAs/InAlAs HFET on InP grown by MOVPEIn: 6th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / Santa Barbara, USA; 27 - 31 March 1994 1994, pp. 439 - 442
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Analysis of ordering in GaInP by means of x-ray diffractionIn: Journal of Applied Physics Vol. 73 (1993) Nr. 6, pp. 2770 - 2774ISSN: 0021-8979; 1089-7550Online Full Text: dx.doi.org/
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Effects of deep levels and Si-doping on GaInP material properties investigated by means of optical methods
European Materials Research Conference (E-MRS), Strasbourg, France, 04.05.1993 - 07.05.1993,In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology Vol. 21 (1993) Nr. 2-3, pp. 181 - 184ISSN: 0921-5107; 1873-4944Online Full Text: dx.doi.org/ -
LP-growth and characterization of short-period strained-layer superlattices (SPSLSs) on InP substrates
5th European Workshop on MOVPE and Rel. Growth Techniques (EW MOVPE), Malmö, Sweden, 02.06.1993 - 04.06.1993,Malmö, Sweden (1993) -
A High Speed MSM-Travelling-Wave Photodetector for InP-Based MMICsIn: Mikrowellen und Optronik: Kongreßunterlagen / MIOP '93, Mikrowellen und Optronik, 7. Kongressmesse für Höchstfrequenztechnik, 25. - 27. Mai 1993, Sindelfingen, Deutschland 1993, pp. 271 - 275ISBN: 978-3-924651-36-7
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High-Resolution STEM-Z-Contrast Imaging and XRD : Two New Approaches for the Characterization of GaInP/GaAs-HeterostructuresIn: Proceedings of the '8th Conference on Microscopy of Semiconductor Materials / Oxford, U.K.; 05.04.1993 - 08.04.1993 1993, pp. 497 - 502
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GaAs MSM Photodiode Using the Highly Doped Channel Layer of a Heterostructure MESFETIn: Physica Status Solidi (A): Applications and Materials Science Vol. 136 (1993) Nr. 1, pp. K65 - K69ISSN: 0031-8965; 1862-6300Online Full Text: dx.doi.org/
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InyGa1-yAs⧸GaAs interface smoothing by GaAs monolayers in highly strained graded superlattice channels (0.2 ≤ y ≤ 0.4) for pseudomorphic AlxGa1-xAs⧸InyGa1-yAs HFETIn: Journal of Crystal Growth Vol. 127 (1993) Nr. 1-4, pp. 589 - 591ISSN: 0022-0248; 1873-5002Online Full Text: dx.doi.org/
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Low temperature molecular beam epitaxy of Al(Ga)InAs on InP and its application to high electron mobility transistor structuresIn: Materials Science and Engineering B: Solid-State Materials for Advanced Technology Vol. 22 (1993) Nr. 1, pp. 89 - 92ISSN: 0921-5107; 1873-4944Online Full Text: dx.doi.org/
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Heterostructures for III-V Microwave Fieldeffect- and BipolartransistorsIn: Proceedings of the '16th International Semiconductor Conference / CAS´93; Sinaia, Romania; 12.10.1993 - 17.10.1993 1993, pp. 11 - 18
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Characterization of Impact-Ionization in InAlAs/InGaAs/InP HEMT Structures using a Novel Photocurrent-Measurement TechniqueIn: Proceedings of the '5th International Conference on InP and Related Materials / IPRM´93; Paris, France; 19.04.1993 - 22.04.1993 1993, pp. 243 - 250
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Investigation of the High-Frequency Performance of AlGaAs/GaAs HBTs Down to 20KIn: Proceedings of Bipolar/BiCMOS Circuits and Technology Meeting / BCTM´93; Minenapolis, USA; 04.10.1993 - 05.10.1993 1993, pp. 32 - 35
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Numerical investigation of leakage current of Schottky contacts on InAlAs/InGaAs/InP heterostructuresIn: Proceedings of the 23rd European Solid State Device Research Conference / ESSDERC '93; Grenoble, France; 13 - 16 September 1993 1993, pp. 463 - 466ISBN: 2-86332-135-8
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Low-temperature MBE of AlGaInAs lattice-matched to InPIn: Journal of Crystal Growth Vol. 127 (1993) Nr. 1-4, pp. 519 - 522ISSN: 0022-0248; 1873-5002Online Full Text: dx.doi.org/
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RF-Characterization of AlGaAs/GaAs HBT Down to 20KIn: Proceedings of the '20th International Symposium on GaAs and Related Compounds / GaAs RC´93; Freiburg, Germany; 29.08.1993 - 02.09.1993 1993, pp. 177 - 182
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Pseudomorphic Ga0.5In0.5P barriers grown by MOVPE for high drain breakdown and low leakage HFET on InPIn: Proceedings of the '20th International Symposium on GaAs and Related Compounds / GaAs RC´93; Freiburg, Germany; 29.08.1993 - 02.09.1993 1993, pp. 827 - 828
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Two-dimensional direct electra-optic field mapping in a monolithic integrated GaAs amplifierIn: 23rd European Microwave Conference / EuMA 1993; Madrid, Spain; 6 - 10 September 1993 1993, pp. 497 - 499Online Full Text: dx.doi.org/
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Two-dimensional direct electro-optic field mapping in a monolithic integrated GaAs amplifierIn: Proceedings of the 23rd European Microwave Conference (EuMC'93) / EuMC'93, 10. September 1993, Madrid, Spain 1993, pp. 497 - 499
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Photoelectrical properties of GaAs MSM photodetektor compatible with pseudomorphic heterostructure MESFETIn: Physica status solidi A: Applications and Materials Science Vol. 140 (1993) Nr. 2, pp. K111 - K114ISSN: 0031-8965; 1862-6300; 1521-396X; 1862-6319Online Full Text: dx.doi.org/
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Extremly low gate leakage InAlAs/InGaAs HEMTIn: Proceedings of the 19th International Symposium on GaAs and Related Compounds / GaAs RC`92; Karuizawa, Japan; 28.09.1992 - 02.10.1992 1992, pp. 941 - 942
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On-wafer microwave measurement setup for investigations on hemt's and high tc Superconductors at Cryogenic Temperatures Down to 20 KIn: IEEE Transactions on Microwave Theory and Techniques Vol. 40 (1992) Nr. 12, pp. 2325 - 2331ISSN: 1557-9670; 0018-9480Online Full Text: dx.doi.org/
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Characterization of MOVPE grown GaInP as wide band gap Schottky barrier layerIn: LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics and Smart Pixels: 4th International Conference on Indium Phosphide and Related Materials / IPRM 1992; Newport, United States; 21 - 24 April 1992 1992, pp. 538 - 541ISBN: 0780305221; 9780780305229Online Full Text: dx.doi.org/
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Coplanar InAlAs/InGaAs/InP microwave delay line with optical controlIn: Proceedings of IEEE Lasers and Electro-Optics Society: Annual Meeting 1992 / LEOS '92: 16-19 Nov. 1992, Boston, MA, USA 1992, pp. 684 - 685Online Full Text: dx.doi.org/
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Coplanar microwave phase shifter for InP-based MMICsIn: Proceedings of the 22nd European Solid-State Device Research Conference / ESSDERC 1992; Leuven; Belgium; 14 - 17 September 1992 1992, Nr. 4, pp. 421 - 424ISBN: 0444894780 ISSN: 1930-8876
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Deep level analysis of Si doped MBE grown AllnAs layersIn: LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics and Smart Pixels: 4th International Conference on Indium Phosphide and Related Materials / IPRM 1992; Newport, United States; 21 - 24 April 1992 1992, pp. 136 - 139ISBN: 0780305221; 9780780305229Online Full Text: dx.doi.org/
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Coplanar microwave phase shifter for InP-based MMICsIn: Microelectronic Engineering Vol. 19 (1992) Nr. 1-4, pp. 421 - 424ISSN: 0167-9317; 1873-5568Online Full Text: dx.doi.org/
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Advances in CPW-design applied to monolithic integrated Ka-band mesfet and HEMT-amplifiers on GaAsIn: 14th Annual IEEE Gallium Arsenide Integrated Circuit Symposium / GaAs IC 1992; Miami Beach, United States; 4 - 7 October 1997 1992, pp. 119 - 122ISBN: 0780307739; 9780780307735Online Full Text: dx.doi.org/
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High Resolution STEM Analysis of InGaAs/AlGaAs Heterostructures
10th International Congress on Electron Microscopy, Granada, Spain, 07.09.1992 - 12.09.1992,Granada, Spain (1992) -
Analysis of gate leakage on MOVPE grown InAlAs/InGaAs-HFETIn: Proceedings of the 22nd European Solid State Device Research Conference / ESSDERC '92, 14-17 September 1992, Leuven, Belgium 1992, pp. 401 - 404ISBN: 0444894780 ISSN: 1930-8876
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Analysis of gate leakage on MOVPE grown InAlAs/InGaAs-HFETIn: Microelectronic Engineering Vol. 19 (1992) Nr. 1-4, pp. 401 - 404ISSN: 0167-9317; 1873-5568Online Full Text: dx.doi.org/
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On the optimization and reliability of ohmic-And Schottky contacts to InAlAs/InGaAs HFETIn: LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics and Smart Pixels: 4th International Conference on Indium Phosphide and Related Materials / IPRM 1992; Newport, United States; 21 - 24 April 1992 1992, pp. 238 - 241ISBN: 0780305221; 9780780305229Online Full Text: dx.doi.org/
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Evidence of oxygen in undoped InAIAs MOVPE layersIn: LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics and Smart Pixels: 4th International Conference on Indium Phosphide and Related Materials / IPRM 1992; Newport, United States; 21 - 24 April 1992 1992, pp. 534 - 537ISBN: 0780305221; 9780780305229Online Full Text: dx.doi.org/
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High doping performance of lattice matched GaInP on GaAsIn: Journal of Crystal Growth Vol. 124 (1992) Nr. 1-4, pp. 475 - 482ISSN: 0022-0248; 1873-5002Online Full Text: dx.doi.org/
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RF Investigations on HEMT's at Cryogenic Temperatures Down to 20K using an On-Wafer Microwave Measurement SetupIn: Proceedings of the 22nd European Microwave Conference / EuMC`92; Helsinki, Finland; 24.08.1992 - 27.08.1992 1992, pp. 151 - 156
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Interdigitated electrode and coplanar waveguide InAlAs/InGaAs MSM photodetectors grown by LP MOVPEIn: Proceedings of the Fourth Indium Phosphide and Related Materials Conference / 4th International Conference on Indium Phosphide and Related Materials - IPRM'92, 21.-24. April 1992, Newport, United States 1992, pp. 596 - 599ISBN: 0-7803-0522-1Online Full Text: dx.doi.org/
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InyGa₁₋yAs{plus 45 degree rule}GaAs interface smoothing by GaAs monolayers in highly strained graded superlattice channels (0.2 ≤ y ≤ 0.4) for pseudomorphic AlₓGa₁₋ₓAs{plus 45 degree rule}InyGa₁₋yAs HFET
7th International Conference on Molecular Beam Epitaxy (MBE), Schwäbisch Gmünd, Germany, 24.08.1992 - 28.08.1992,Schwäbisch Gmünd, Germany (1992) -
Numerical analysis of InP-JFET by use of a quasi 2D-modelIn: Microelectronic Engineering Vol. 19 (1992) Nr. 1-4, pp. 39 - 42ISSN: 0167-9317; 1873-5568Online Full Text: dx.doi.org/
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Numerical analysis of InP-JFET by use of a Quasi 2D-modelIn: Proceedings of the 22nd European Solid State Device Research Conference / ESSDERC '92, 14-17 September 1992, Leuven, Belgium 1992, pp. 39 - 42ISBN: 0444894780 ISSN: 1930-8876
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On-Wafer RF Measurement Setup for the Characterization of HEMT's and High TC Superconductors at Very Low Temperatures Down to 20KIn: Proceedings of IEEE International Microwave Symposium (MTT-S) / Albuquerque, USA; 01.06.1992 - 05.06.1992 1992, pp. 1439 - 1442
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Low Damage High Selective Dry Etch Process for the Fabrication of GaAs MESFET and AlxGa1-xAs/GaAs HFETIn: Proceedings of the 14th State-of-the-Art Program of Compound Semiconductors / SOTAPOCS´91; Bellcore, USA; 03.05.1991 / Buckley, D.N.; Macrander, A.T. (Eds.) 1991, pp. 91 - 99
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Characterization of reactive ion etched AlGaAs/GaAs heterostructures by photoluminescence and low temperature Hall measurementsIn: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Vol. 9 (1991) Nr. 3, pp. 1456ISSN: 0734-211X; 2166-2754Online Full Text: dx.doi.org/
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Material characterisation of InGaAs/InAlAs heterostructure field effect transistors with heavily doped n-type InAlAs donor layerIn: Third International Conference on Indium Phosphide and Related Materials: Conference Proceedings / 3rd International Conference on Indium Phosphide and Related Materials; Cardiff, Wales; 8 - 11 April 1991 1991, pp. 284 - 287ISBN: 0-87942-626-8Online Full Text: dx.doi.org/
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Full-Wave Analysis of a Modified Coplanar Air Bridge T-JunctionIn: 21st European Microwave Conference: Volume 2 / EuMC 1991; Stuttgart; Germany; 9 - 12 September 1991 1991, pp. 993 - 998ISBN: 9780000000002Online Full Text: dx.doi.org/
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Optimization of the AlInAs growth temperature for AlInAs/GaInAs HEMTs grown by MBEIn: Proceedings of the 21st European Solid State Device Research Conference / ESSDERC '91, 16-19 September 1991, Montreux, Switzerland 1991, pp. 569 - 572ISBN: 0444890661 ISSN: 1930-8876
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Optical and electrical properties of the AlₓGa₁₋ₓAs/GaAs single heterojunctions grown by low pressure MOVPEIn: Journal of Crystal Growth Vol. 107 (1991) Nr. 1-4, pp. 434 - 439ISSN: 0022-0248; 1873-5002Online Full Text: dx.doi.org/
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Growth and characterization of AlGaAs/GaAs Bragg reflectors for nonlinear optoelectronic devicesIn: Materials Science and Engineering B: Solid-State Materials for Advanced Technology Vol. 9 (1991) Nr. 1-3, pp. 361 - 364ISSN: 1873-4944; 0921-5107Online Full Text: dx.doi.org/
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Ultralow doping profiles for applications in 3D integrated varactor tuned oscillators grown by MOVPEIn: Journal of Crystal Growth Vol. 107 (1991) Nr. 1-4, pp. 956 - 959ISSN: 0022-0248; 1873-5002Online Full Text: dx.doi.org/
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Scanning transmission electron microscopy of heterointerfaces grown by metalorganic vapor phase epitaxy (MOVPE)In: Journal of Crystal Growth Vol. 107 (1991) Nr. 1-4, pp. 452 - 457ISSN: 0022-0248; 1873-5002Online Full Text: dx.doi.org/
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Technology for III/V-Semiconductor HFET DevicesIn: III-V Microelectronics 1991, pp. 277 - 313ISBN: 978-0-444-88990-4Online Full Text: dx.doi.org/
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Method for the development of monolithical integrated resonators on GaAs with increased Q-factorIn: Conference Proceedings - 20th European Microwave Conference: Volume 2 / European Microwave Conference (EuMC); 10 - 13 September 1990; Budapest, Hungary 1990, pp. 965 - 970ISBN: 0946821178
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3D Integration of GaAs MESFET and varactor diode for a VCO-MMICIn: 20th European Solid State Device Research Conference / ESSDERC`90; Nottingham, U.K.; 10.09.1990 - 13.09.1990 / Eccleston, W.; Rosser, P.J. (Eds.) 1990, pp. 229 - 232ISBN: 0750300655 ISSN: 1930-8876
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Electrooptical light modulation and SEED effect in surface oriented AlGaAs/GaAs Bragg reflectors
Meeting on Future Directions for Optics in Computers,Besancon, France (1990) -
d.c.- and r.f.-characterisation of conventional and superlattice heterostructure field-effect transistors at low temeperaturesIn: Solid State Electronics Vol. 33 (1990) Nr. 11, pp. 1393 - 1400ISSN: 0038-1101; 1879-2405Online Full Text: dx.doi.org/
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Dispersion und Arbeitspunktabhängigkeit des Ausgangswiderstandes in Heterostruktur-FeldeffekttransistorenIn: ITG-Fachtagung "Heterostruktur-Bauelemente" / Schwäbisch Gmünd, Germany; 25.04.1990 - 27.04.1990 1990, pp. 267 - 271
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Properties of p-type heterostructure field effect transistors at cryogenic temperaturesIn: Surface Science Vol. 228 (1990) Nr. 1-3, pp. 472 - 475ISSN: 0039-6028; 1879-2758Online Full Text: dx.doi.org/
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Electro-optical modulation in AlGaAs/GaAs distributed feedback structuresIn: High Speed Phenomena in Photonic Materials and Optical Bistability / The International Congress on Optical Science and Engineering, 12-16 March 1990, The Hague, The Netherlands / Jäger, Dieter (Eds.) 1990, pp. 202 - 208ISBN: 0-8194-0327-XOnline Full Text: dx.doi.org/
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Hall-equivalent determination of carrier mobility and concentration in SQW-, MQW-, and HIG-FET channelsIn: Proceedings of the 16th International Symposium on GaAs and Related Compounds / GaAs RC´89; Karuizawa, Japan; 25 - 29 September 1989; Ikoma, T. 1990, pp. 501 - 506ISBN: 0-85498-065-2
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Optimized Layer Structures for 3D Integration of GaAs Varactor and MESFET for a wide Tuning Range VCOIn: Proceedings of '17th European GaAs and Related III-V Compounds Application Symposium / GAAS´90; Jersey, U.K.; 24.09.1990 - 27.09.1990 1990, pp. 509 - 514
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Simulation of short‐channel and surface effects in submicron GaAs MESFETsIn: European Transactions on Telecommunications Vol. 1 (1990) Nr. 4, pp. 401 - 409ISSN: 1541-8251; 1124-318XOnline Full Text: dx.doi.org/
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Photonic Switching and SEED Effect in AlGaAs/GaAs DFB Structures Grown by MOVPEIn: Photonic Switching II: Proceedings of the International Topical Meeting / International Topical Meeting, Kobe, Japan, April 12–14, 1990 / Tada, Kunio; Hinton, H. Scott (Eds.) 1990, pp. 185 - 189ISBN: 978-3-642-76023-5; 978-3-642-76025-9Online Full Text: dx.doi.org/
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Simulation of surface effects in planar GaAs MESFET structures by use of a quasi‐2D modelIn: European Transactions on Telecommunications Vol. 1 (1990) Nr. 4, pp. 389 - 392ISSN: 1541-8251; 1124-318XOnline Full Text: dx.doi.org/
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Herstellung und Untersuchung von Heterostruktur-Feldeffekttransistoren mit isoliertem Gate (HIGFET)In: Proceedings ITG-Fachtagung "Heterostruktur-Bauelemente" / Schwaebisch Gmuend, Germany; 25.04.1990 - 27.04.1990 1990, pp. 255 - 260
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Submicron pseudomorphic Al0.2Ga0.8As/InGaAs-HFET made by Conventional Optical Lithography for Microwave Circuit Applications above 100GHzIn: Proceedings of the '20th European Solid State Device Research Conference / ESSDERC`90; Nottingham, U.K.; 10.09.1990 - 13.09.1990 1990, pp. 105 - 108
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Submikrometer Al0.2Ga0.8As/In0.25Ga0.75As Mehrfinger-HFET für Mikrowellenschaltungen über 100 GHz hergestellt mit optischer KontaktlithographieIn: Proceedings ITG-Fachtagung "Heterostruktur-Bauelemente" / Schwaebisch Gmuend, Germany; 25.04.1990 - 27.04.1990 1990, pp. 29 - 30
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Arsenic antisite defects in AlxGa1-xAs observed by luminescence-detected electron-spin resonanceIn: Physical Review B: Condensed matter and materials physics Vol. 40 (1989) Nr. 3, pp. 2001 - 2004ISSN: 0163-1829; 1550-235XOnline Full Text: dx.doi.org/
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Arsenic antisite defects in AlxGa1-xAs observed by luminescence detected electron spin resonanceIn: Proceedings of the 16th International Symposium on GaAs and Related Compounds / GaAs RC´89; Karuizawa, Japan; 25.09.1989 - 29.09.1989 1989, pp. 285 - 290ISSN: 0305-2346; 0951-3248
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Current oscillations at high electrical fields in the two-dimensional electron gas in GaAs/AlGaAs heterostructuresIn: Applied Physics Letters (APL) Vol. 54 (1989) Nr. 26, pp. 2668 - 2670ISSN: 0003-6951; 1077-3118Online Full Text: dx.doi.org/ (Open Access)
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Coplanar lumped elements and their application in filters on ceramic and gallium arsenide substratesIn: Proceedings of the 19th European Microwave Conference / EuMIC 1989; London, United Kingdom; 4 - 7 Sptember 1989 1989, pp. 656 - 661ISBN: 0946821763; 9780946821761Online Full Text: dx.doi.org/
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Determination of Trap Parameters in Highly Doped Semiconductors from Low Frequency Noise Spectra
10th International Conference on Noise in Physical Systems and 1/f Fluctuations (ICNF), Budapest, Ungarn, 21.08.1989 - 25.08.1989,Budapest (1989) -
Investigations on air bridges used for MMICs in CPW techniqueIn: Proceedings of the 19th European Microwave Conference / EuMIC 1989; London, United Kingdom; 4 - 7 Sptember 1989 1989, pp. 666 - 671ISBN: 0946821763; 9780946821761Online Full Text: dx.doi.org/
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3-Dimensionale Integration von GaAs MESFET und VaractordiodeIn: Mikroelektronik für die Informationstechnik: Vorträge der ITG-Fachtagung / 3. bis 5. Oktober 1989 in Stuttgart 1989, pp. 215 - 219ISBN: 3-8007-1666-6
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Deep levels in p-type AlGaAs/GaAs heterostructuresIn: Journal of Applied Physics Vol. 65 (1989) Nr. 7, pp. 2867 - 2869ISSN: 0021-8979; 1089-7550Online Full Text: dx.doi.org/ (Open Access)
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Monolithisch integrierter Mikrowellenoszillator in SchlitzleitungstechnikIn: NTZ: Fachzeitschrift für Informations- und Kommunikationstechnik Vol. 42 (1989) Nr. 10, pp. 628 - 631ISSN: 2190-4197; 0948-728X
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Evaluation of the trap concentration in highly doped semiconductors from low-frequency noise spectraIn: Journal of Applied Physics Vol. 66 (1989) Nr. 1, pp. 219 - 222ISSN: 0021-8979; 1089-7550Online Full Text: dx.doi.org/ (Open Access)
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Transport properties of the two-dimensional hole gas in p-type heterostructure field-effect transistorsIn: Journal of Applied Physics Vol. 66 (1989) Nr. 1, pp. 298 - 302ISSN: 0021-8979; 1089-7550Online Full Text: dx.doi.org/ (Open Access)
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RF Measurements and Characterization of Heterostructure Field-Effect Transistors at Low TemperaturesIn: IEEE Transactions on Microwave Theory and Techniques Vol. 37 (1989) Nr. 9, pp. 1380 - 1388ISSN: 1557-9670; 0018-9480Online Full Text: dx.doi.org/
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InGaAs Single- and Dual-Gate High Speed FETs : Preparation and Performance
European Materials Research Conference (E-MRS), Strasbourg, France, 1988,In: Journal de Physique (1988) pp. 205 - 207ISSN: 0302-0738 -
Generation-Recombination Noise in the Saturation Regime of MODFET StructuresIn: IEEE Transactions on Electron Devices (T-ED) Vol. 35 (1988) Nr. 5, pp. 623 - 628ISSN: 1557-9646; 0018-9383Online Full Text: dx.doi.org/
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InGaAs-Feldeffekttransistoren : Verstärkerbauelemente in integrierten optoelektronischen SchaltungenIn: Mikroelektronik für die Informationstechnik: Vorträge der ITG-Fachtagung / ITG-Fachtagung Mikroelektronik für die Informationstechnik ; 3. bis 5. Oktober 1988 in Berlin 1988, pp. 15 - 20ISBN: 3-8007-1591-0
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Influence of p-InP buffer layers on submicron InGaAs/InP junction field-effect transistorsIn: Applied Physics Letters (APL) Vol. 53 (1988) Nr. 25, pp. 2513 - 2515ISSN: 0003-6951; 1077-3118Online Full Text: dx.doi.org/ (Open Access)
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Safety aspects of MOVPE in research and development : An exampleIn: Journal of Crystal Growth Vol. 93 (1988) Nr. 1-4, pp. 279 - 284ISSN: 0022-0248; 1873-5002Online Full Text: dx.doi.org/
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InGaAs single- and dual-gate high-speed FETs : Preparation and performanceIn: 18th European Solid State Device Research Conference / ESSDERC 1988; Montpellier, France; 13 - 16 September 1988 / Nougier, J.-P.; Gasquet, D. (Eds.) 1988, pp. C4205 - C4208ISBN: 2-86883-099-4Online Full Text: dx.doi.org/
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Transducer-Less SEAM of III–V Compound SemiconductorsIn: Photoacoustic and Photothermal Phenomena: Proceedings / 5th International Topical Meeting, Heidelberg, Fed. Rep. of Germany, July 27–30, 1987 / Hess, Peter; Pelzl, Josef (Eds.) 1988, pp. 237 - 240ISBN: 978-3-662-13705-5; 978-3-540-48181-2Online Full Text: dx.doi.org/
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Shallow and Deep Impurity Investigations : The Important Step Towards a Microwave Field-Effect Transistor Working at Cryogenic TemperaturesIn: Properties of Impurity States in Superlattice Semiconductors / Fong, C. Y.; Batra, Inder P.; Ciraci, S. (Eds.) 1988, pp. 135 - 146ISBN: 978-1-4684-5555-7; 978-1-4684-5553-3Online Full Text: dx.doi.org/
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p-type ohmic contacts to AlGaAs/GaAs heterostructures
3rd International Conference on Superlattices Microstructures and Microdevices (ICSMM), Chicago, USA, 17.08.1987 - 20.08.1987,In: Superlattices and Microstructures Vol. 4 (1988) Nr. 2, pp. 197 - 199ISSN: 1096-3677; 0749-6036Online Full Text: dx.doi.org/ -
Low-frequency noise measurements on n-InGaAs/p-InP junction field-effect transistor structuresIn: Applied Physics Letters (APL) Vol. 52 (1988) Nr. 2, pp. 111 - 113ISSN: 0003-6951; 1077-3118Online Full Text: dx.doi.org/ (Open Access)
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Heterostruktur FeldeffekttransistorenIn: Mikroelektronik Vol. 1 (1987) pp. 76 - 79
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Characterization of Deep Levels in Superlattice and Conventional Heterostructure Field Effect-Transistors by Photocapacitance and C-V Measurements
European Materials Research Conference (E-MRS), Strasbourg, France, 02.06.1987 - 05.06.1987,In: Journal de Physique (1987) pp. 303 - 309ISSN: 0302-0738 -
Device performance and transport properties of HFETs at low temperaturesIn: Proceedings of the 14th International Symposium on GaAs and Related Compounds / GaAs RC´87; Heraklion, Greece; 28.09.1987 - 01.10.1987 1987, pp. 681 - 684
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Generation-Recombination Noise in Heterostructures in the Velocity Saturated RegimeIn: Proceedings of the 9th International Conference on Noise in Physical Systems and 1/f Fluctuations / Montreal, Canada; 25.05.1987 - 29.05.1987 1987, pp. 78 - 81
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High Transconductance Submicron Self-Aligned InGaAs JFETsIn: Proceedings of the 14th International Symposium on GaAs and Related Compounds / GaAs RC´87; Heraklion, Greece; 28.09.1987 - 01.10.1987 1987, pp. 721 - 724
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Improved 77K Performance of AlAs/GaAs Superlattice Heterostructure Field-Effect-Transistors (SL HFET)In: Proceedings of the 13th International Symposium on Gallium Arsenide and Related Compounds / Las Vegas, Nevada; 28 September – 1 October 1986 1987, pp. 563 - 568ISSN: 0305-2346; 0951-3248
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Trap detection at A p-p In₀.₅₃Ga₀.₄₇As/InP heterojunction by means of C-V, I-V and photocapacitance measurementsIn: Journal of Crystal Growth Vol. 83 (1987) Nr. 2, pp. 246 - 251ISSN: 0022-0248; 1873-5002Online Full Text: dx.doi.org/
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Heterostructure Characterization by Electronic and Optoelectronic MethodsIn: Advanced Materials for Telecommunication: Proceedings of the Symposium / Symposium "Advanced Materials for Telecommunication"; 17.06.1986 - 20.06.1986; Strasbourg/France 1986, pp. 287 - 310ISBN: 2868830390
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An improved model to explain ohmic contact resistance of f-GaAs and other semiconductorsIn: Solid State Electronics Vol. 29 (1986) Nr. 5, pp. 489 - 494ISSN: 0038-1101; 1879-2405Online Full Text: dx.doi.org/
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CV profiling on p-p- and n-s.i.-In₀.₅₃Ga₀.₄₇As/InP heterointerfaces
2nd International Conference on Modulated Semiconductor Structures (MSS), Kyoto, Japan, 09.09.1985 - 13.09.1985,In: Surface Science Vol. 174 (1986) Nr. 1-3, pp. 331 - 336ISSN: 0039-6028; 1879-2758Online Full Text: dx.doi.org/ -
Deep Level Analysis in Heterostructure Field-Effect Transistors by Means of the Photo-FET Method
15th European Solid State Device Research Conference (ESSDERC), Aachen, Germany, 09.09.1985 - 12.09.1985,In: IEEE Transactions on Electron Devices (T-ED) Vol. 33 (1986) Nr. 5, pp. 693 - 697ISSN: 1557-9646; 0018-9383Online Full Text: dx.doi.org/ -
Gate-Voltage Dependent Transport Measurements on Heterostructure Field-Effect TransistorsIn: IEEE Transactions on Electron Devices (T-ED) Vol. 33 (1986) Nr. 5, pp. 646 - 650ISSN: 1557-9646; 0018-9383Online Full Text: dx.doi.org/
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Application of the Magnetotransconductance Mobility Measurements Method to Two-Dimensional Electron Gas FETsIn: Semiconductor Quantum Well Structures and Superlattices: Papers / MRS-Europe Spring Meeting (Symposium 3); 13-15 Mai 1985; Strasbourg/France 1986, pp. 91 - 96ISBN: 2868830153
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InGaAs-JFETs with p+-Gates Diffused from Spin-on Films for Ka-Band OperationIn: Proceedings of the 12th International Symposium on GaAs and Related Compounds / GaAs RC´85; Karuizawa, Japan; 01.09.1985 1986, pp. 619 - 624ISBN: 0854981705
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InGaAs junction FETs with frequency limit (MAG = 1) above 30 GHzIn: Electronics Letters Vol. 21 (1985) Nr. 10, pp. 449 - 451ISSN: 0013-5194; 1350-911XOnline Full Text: dx.doi.org/
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Numerical Investigation of GaAs MESFETs and InGaAs JFETs and Comparison with Experimental ResultsIn: Proceedings of the 3rd International Workshop on Physics of Semiconductor Devices / Madras, India; 27.11.1985 - 02.12.1985 1985, pp. 23 - 30
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Deep Level Analysis in (InGa)As-InP by Measuring the Low Frequency Noise of a Simple Resistor StructureIn: Proceedings of the International Electron Device Meeting / IEDM´84; Hsinchu, Taiwan; 04.09. - 06.09.1984 1984, pp. 59 - 63
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Deep-Level Analysis in (AlGa)As–GaAs 2-D Electron Gas Devices by Means of Low-Frequency Noise MeasurementsIn: IEEE Electron Device Letters Vol. 5 (1984) Nr. 1, pp. 9 - 11ISSN: 1558-0563; 0741-3106Online Full Text: dx.doi.org/
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High-Speed Homo- and Heterostructure Field-Effect TransistorsIn: Advances in Solid State Physics: Plenary Lectures / 48th Annual Meeting of the German Physical Society (DPG) and of the Divisions “Semiconductor Physics” “Metal Physics” “Low Temperature Physics” “Thermodynamics and Statistical Physics” “Thin Films” “Surface Physics” “Magnetism” “Physics of Polymers” “Molecular Physics”, Münster, 12 - 17 March 1984 / Grosse, P. (Eds.) 1984, pp. 311 - 330ISBN: 978-3-528-08030-3; 978-3-540-75374-2Online Full Text: dx.doi.org/
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GaAs MESFETs with a Highly Doped ChannelIn: International Conference on Solid State Devices and Materials / ICSSDM´84; Kobe, Japan; 30.08. - 01.09.1984 1984, pp. 375 - 378ISBN: 4930813077
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Improved Short-Channel GaAs MESFET's by Use of Higher Doping ConcentrationIn: IEEE Transactions on Electron Devices (T-ED) Vol. 31 (1984) Nr. 8, pp. 1032 - 1037ISSN: 1557-9646; 0018-9383Online Full Text: dx.doi.org/
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Optimisation of modulation-doped heterostructures for TEGFET operation at room temperatureIn: Electronics Letters Vol. 20 (1984) Nr. 15, pp. 615 - 617ISSN: 0013-5194; 1350-911XOnline Full Text: dx.doi.org/
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Investigation of Deep Levels at Interfaces by Means of FET-Structures and Optical ExcitationIn: Proceedings of the 11th International Symposium on GaAs and Related Compounds / GaAs RC´84; Biarritz, France; 26.09. - 28.09.1984 1984, pp. 305 - 310
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Diffusion in III-V semiconductors from spin-on-film sourcesIn: Journal of Physics D: Applied Physics Vol. 17 (1984) Nr. 3, pp. 443 - 474ISSN: 0022-3727; 1361-6463; 0262-8171Online Full Text: dx.doi.org/ (Open Access)
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Field-Effect Transistors with a Two-Dimensional Electron Gas as ChannelIn: Two-Dimensional Systems, Heterostructures, and Superlattices: Proceedings / International Winter School Mauterndorf, Austria, 26 February - 2 March 1984 / Bauer, Günther; Kuchar, Friedemar; Heinrich, Helmut (Eds.) 1984, pp. 125 - 135ISBN: 978-3-642-82313-8; 978-3-642-82311-4Online Full Text: dx.doi.org/
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Noneutectic Au/Ge Alloy Ohmic Contact Technology for Diffused N-Channel GaAs MESFETIn: Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors Vol. 5 (1984) Nr. 1, pp. 99 - 102ISSN: 0253-4177
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Selectively doped n-AlₓGa₁₋ₓAs/GaAs heterostructures with high-mobility two-dimensional electron gas for field effect transistors : Part II: Hot electron effectsIn: Applied Physics A: Materials Science and Processing Vol. 33 (1984) Nr. 3, pp. 183 - 193ISSN: 0721-7250; 1432-0630; 0340-3793; 0947-8396Online Full Text: dx.doi.org/
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Selectively doped n-AlₓGa₁₋ₓAs/GaAs heterostructures with high-mobility two-dimensional electron gas for field effect transistors : Part I: Effect of parallel conductanceIn: Applied Physics A: Materials Science and Processing Vol. 33 (1984) Nr. 2, pp. 63 - 76ISSN: 0721-7250; 1432-0630; 0340-3793; 0947-8396Online Full Text: dx.doi.org/
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Traps at interfaces between GaAs n-type LPE layers and different substratesIn: Surface Science Vol. 132 (1983) Nr. 1-3, pp. 465 - 468ISSN: 0039-6028; 1879-2758Online Full Text: dx.doi.org/
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Deep Level Analysis in AlGaAs-GaAs MODFETs by Means of Low Frequency Noise MeasurementsIn: Proceedings of the International Electron Device Meeting / IEDM`83; Washington D.C., USA; 05.12.1983 - 07.12.1983 1983, pp. 107 - 110
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GaAs-MESFETs with Highly Doped (1018cm-3) Channels : An Experimental and Numerical InvestigationIn: Proceedings of the International Electron Device Meeting / IEDM`83; Washington D.C., USA; 05.12.1983 - 07.12.1983 1983, pp. 621 - 624ISSN: 0163-1918
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Diffusion aus Dotierstoffemulsionen - ein einfaches und preiswertes Verfahren zur Dotierung von III-V- HalbleiternIn: EPP Elektronik, Produktion & Prüftechnik (1983) Nr. März, pp. 102 - 104ISSN: 0172-6250
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Low Frequency Noise in AlGaAs-GaAs 2-d Electron Gas Devices and its Correlation to Deep LevelsIn: Proceedings of the International Conference on Noise in Physical Systems and 1/f Fluctuations / ICNF´83; Montpellier, France; 17.05.1983 - 20.05.1983 / Savelli, M.; Lecoy, G.; Nougier, J.P. (Eds.) 1983, pp. 261 - 264
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Improved Performance of Micron and Submicron Gate GaAs-MESFETs due to High Electron Concentrations (n = 1018cm-3) in the ChannelIn: Proceedings of the IEEE GaAs IC Symposium / GaAs IC´83; Phoenix, USA; 01.10.1983 1983, pp. 153 - 156
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Diffusion into InP and InGaAs from Spin-on Film Sources and Applications to Devices
2nd NATO Workshop on Materials Aspects of InP; Lancaster, U.K.; 28.03.1983 - 30.03.1983,Lancaster (1983) -
Diffusion aus Dotierstoffemulsionen - ein einfaches und preiswertes Verfahren zur Dotierung von III-V- HalbleiternIn: Internationale Messe für Bauelementefertigung: Konferenzunterlagen / IMB; 20.09.1982 - 22.09.1982; Wiesbaden, Deutschland 1982, pp. 119 - 132ISBN: 0907634079
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New explanation of ND⁻¹dependence of specific contact resistance for n-GaAsIn: Electronics Letters Vol. 18 (1982) Nr. 22, pp. 940 - 941ISSN: 0013-5194; 1350-911XOnline Full Text: dx.doi.org/
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Deep Level Profiles of GaAs Active Layers and their Correlation to Substrate PropertiesIn: Semi-insulating III-V materials: Evian 1982 / Conference on Semi-Insulating III-V Materials 2; 1982.04.19-21; Evian, France 1982, pp. 291 - 297ISBN: 0906812224
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RF-Sputtering of Silicon Nitride Layers on GaAs Substrates : Characterization of an Intermediate Layer Between the Substrate and the Deposited FilmIn: Insulating Films on Semiconductors: Proceedings / Second International Conference, INFOS 81, Erlangen, Fed. Rep. of Germany, April 27-29, 1981 / Schulz, Max J.; Pensl, Gerhard (Eds.) 1981, pp. 294 - 297ISBN: 978-3-642-68249-0; 978-3-642-68247-6Online Full Text: dx.doi.org/
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Chromium and Tin Migration During Open Tube Diffusion into GaAsIn: Proceedings of the International Symposium on GaAs and Related Compounds / GaAs RC´81; Oiso, Japan; 20.09.1981 - 23.09.1981 1981, pp. 371 - 376ISSN: 0305-2346; 0951-3248
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I.C.-compatible completely planar GaAs M.E.S.F.E.T.S. by selective diffusionIn: Electronics Letters Vol. 16 (1980) Nr. 24, pp. 923 - 924ISSN: 0013-5194; 1350-911XOnline Full Text: dx.doi.org/
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Deep Level Measurements of Layers on Semi-Insulating GaAs Substrates by Means of the Photofet MethodIn: Semi-Insulating III–V Materials: Nottingham 1980 / Rees, G. J. (Eds.) 1980, pp. 321 - 328ISBN: 978-1-4684-9193-7; 978-1-4684-9195-1Online Full Text: dx.doi.org/
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Photo-f.e.t. Method : High-Resolution deep-level measurement technique using a m.e.s.f.e.t. structureIn: Electronics Letters Vol. 16 (1980) Nr. 1, pp. 22 - 23ISSN: 0013-5194; 1350-911XOnline Full Text: dx.doi.org/
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Tin Diffusion from Doped Oxides for Fabricating GaAs Microwave DevicesIn: Proceedings of the 11th Conference on Solid State Devices / ICSSD´79; Tokio, Japan; Aug 27 - Aug 29, 1979 1980, pp. 89 - 90Online Full Text: dx.doi.org/
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Tin diffusion from doped oxides for fabricating gaas microwave devicesIn: Japanese Journal of Applied Physics (JJAP) Vol. 19 (1980) Nr. Suppl. 19-1, pp. 361 - 364ISSN: 1347-4065; 0021-4922Online Full Text: dx.doi.org/ (Open Access)
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Nonlinear wave propagation along periodic-loaded transmission linesIn: Applied Physics Vol. 15 (1978) Nr. 4, pp. 393 - 397ISSN: 0947-8396; 1432-0630Online Full Text: dx.doi.org/ Online Full Text