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Publications BHE

    2025

  • Watermann, Jonas; Van Essen, Fabian; Mutlu, Enes; Preuß, Christian; Muller, Konrad; Weimann, Ph.D., Nils
    A 0.55 THz Self Injection-Locked Resonant Tunneling Diode Radar for Micrometer Ranging
    In: IEEE Sensors Journal (J-SEN), Vol. 25, 2025, Nr. 18, pp. 34566 – 34574
    DOI (Open Access)
  • Watermann, Jonas; Mutlu, Enes; Abts, Jonathan; Preuß, Christian; Weimann, Nils
    Analysis of subharmonic phase control in cavity-coupled resonant tunneling diode oscillators
    In: Journal of Computational Electronics, Vol. 24, 2025, Nr. 5, 150
    DOI (Open Access)
  • Clochiatti, Simone
    Triple-Barrier Resonant Tunneling Diodes for Sensitive THz Detection
    Duisburg, Essen, 2025
    DOI, Online Full Text (Open Access)
  • Alibeigloo, Pooya; Preuß, Christian; Mutlu, Enes; Sheikh, Fawad; Zantah, Yamen; Prokscha, Andreas; Watermann, Jonas; Abts, Jonathan; Kress, Robin; Clochiatti, Simone; Kaiser, Thomas; Weimann, Ph.D., Nils
    Plant Water Content Monitoring Using Miniaturized THz RTD Oscillators and Detectors
    In: 2025 International Conference on Mobile and Miniaturized Terahertz Systems (ICMMTS) / 2025 International Conference on Mobile and Miniaturized Terahertz Systems (ICMMTS), 23-26 February 2025, Dubai, United Arab Emirates / International Conference on Mobile and Miniaturized Terahertz Systems (Eds.). Piscataway: Institute of Electrical and Electronics Engineers, 2025
    DOI, Online Full Text
  • Preuß, Christian; Mikov, Erika; Weimann, Ph.D., Nils
    Design and RF Characterization of Manufacturable Flip-Chip Transition Targeting D-band
    In: 2025 International Conference on Mobile and Miniaturized Terahertz Systems (ICMMTS) / 2025 International Conference on Mobile and Miniaturized Terahertz Systems (ICMMTS), 23-26 February 2025, Dubai, United Arab Emirates / International Conference on Mobile and Miniaturized Terahertz Systems (Eds.). Piscataway: Institute of Electrical and Electronics Engineers, 2025
    DOI, Online Full Text
  • Clochiatti, Simone; Grygoriev, Anton; Kress, Robin; Mutlu, Enes; Possberg, Alexander; Vogelsang, Florian; Delden, Marcel Van; Pohl, Nils; Weimann, Nils
    Low-noise Resonant Tunneling Diode Terahertz Detector
    In: IEEE Transactions on Terahertz Science and Technology, Vol. 15, 2025, Nr. 1, pp. 107 – 119
    DOI, Online Full Text (Open Access)
  • Possberg, Alexander; van Essen, Fabian; Zhang, Hao; Watermann, Jonas; Abts, Jonathan; Ebbert, Jan; Mueller, Konrad; Häuser, Patrick; Liborius, Lisa; Weimann, Nils
    n+ Doped In₀.₅₃Ga₀.₄₇As Using Di-Tert-Butylsilane in a Vertical MOVPE Reactor
    In: Physica Status Solidi (A) - Applications and Materials Science, Vol. 222, 2025, Nr. 22, 2500407
    DOI (Open Access)
  • Koch, Juliane; Häuser, Patrick; Kleinschmidt, Peter; Liborius, Lisa; Weimann, Nils; Hannappel, Thomas
    Following Charge Carrier Transport in Freestanding Core–Shell GaN Nanowires on n-Si(111) Substrates
    In: ACS Applied Electronic Materials, Vol. 7, 2025, Nr. 8, pp. 3469 – 3476
    DOI (Open Access)
  • Zargarpourfardin, Nazli; Vogelsang, Florian; Pohl, Nils; Yacoub, Hady; Weimann, Nils
    Coupled-Line Push-Push Colpitts Oscillator Operating at 0.45 THz with High-Efficiency DC-to-RF 1.01% Based on Transferred-Substrate InP-HBT MMIC Process
    In: Journal of Infrared, Millimeter, and Terahertz Waves, Vol. 46, 2025, Nr. 4, 26
    DOI (Open Access)
  • Häuser, Patrick; Heidelmann, Markus; Prost, Werner; Bartsch, Mathias; Lorke, Axel; Weimann, Ph.D., Nils
    Scanning Transmission Electron Microscopy Analysis of the Si(111)–AlN–GaN Nanowire Interface Grown by Polarity- and Site-Controlled Growth Method
    In: Physica Status Solidi (A) - Applications and Materials Science, Vol. 222, 2025, Nr. 4, 2400562
    DOI (Open Access)
  • Shanin, Nikita; Clochiatti, Simone; Mayer, Kenneth M.; Cottatellucci, Laura; Weimann, Nils; Schobe, Robert
    Information Rate-Harvested Power Tradeoff in THz SWIPT Systems Employing Resonant Tunnelling Diode-based EH Circuits
    In: IEEE Transactions on Communications, Vol. 73, 2025, Nr. 2, pp. 1336 – 1352
    DOI, Online Full Text (Open Access)
  • Prokscha, Andreas; Sheikh, Fawad; Jalali, Mandana; De Boose, Pieterjan; De Borre, Eline; Jeladze, Vera; Ribas, Felipe Oliveira; Carvajal, David Toribio; Svejda, Jan Taro; Kubiczek, Tobias; Aqlan, Basem; Alibeigloo, Pooya; Mutlu, Enes; Watermann, Jonas; Abts, Jonathan; Kress, Robin; Preuß, Christian; Clochiatti, Simone; Wiedau, Livia Carmen; Weimann, Nils; Balzer, Jan C.; Thielens, Arno; Kaiser, Thomas; Erni, Daniel
    Perspectives on terahertz honey bee sensing
    In: Scientific Reports, Vol. 15, 2025, Nr. 1, 10638
    DOI (Open Access)

    • 2024

  • Mutlu, Enes; Grygoriev, Anton; Clochiatti, Simone; Kress, Robin; Preuss, Christian; Possberg, Alexander; Prost, Werner; Weimann, Nils
    Experimental and Theoretical Investigation of Collector Spacer and Doping Profile on Triple-Barrier Resonant Tunneling Diodes
    In: Physica Status Solidi (A) - Applications and Materials Science, Vol. 221, 2024, Nr. 13, Special Issue: Compound Semiconductors, 2300575
    DOI (Open Access)
  • Mutlu, Enes; Preuß, Christian; Vogelsang, Florian; Kreß, Robin; Bott, Jonathan; Sievert, Benedikt; Watermann, Jonas; Abts, Jonathan; Rennings, Andreas; Erni, Daniel; Pohl, Nils; Weimann, Nils
    Hetero-Integrated InP RTD-SiGe BiCMOS Source with Fundamental Injection Locking
    In: IEEE Microwave and Wireless Technology Letters, Vol. 34, 2024, Nr. 11, pp. 1278 – 1281
    DOI, Online Full Text (Open Access)
  • Koch, Juliane; Häuser, Patrick; Kleinschmidt, Peter; Prost, Werner; Weimann, Nils; Hannappel, Thomas
    Tracking Charge Carrier Paths in Freestanding GaN/AlN Nanowires on Si(111)
    In: ACS Applied Materials & Interfaces, Vol. 16, 2024, Nr. 39, pp. 52780 – 52788
    DOI (Open Access)
  • Alibeigloo, Pooya; Kubiczek, Tobias; Aqlan, Basem; Damyanov, Dilyan; Schultze, Thorsten; Weimann, Ph.D., Nils; Balzer, Jan C.
    Refractive Index Resolved Imaging Enabled by Terahertz Time-Domain Spectroscopy Ellipsometry
    In: Journal of Infrared, Millimeter, and Terahertz Waves, Vol. 45, 2024, Nr. 11-12, pp. 984 – 998
    DOI (Open Access)
  • Mueller, Konrad; Preuss, Christian; Kress, Robin; Mutlu, Enes; Weimann, Nils
    Rectangular Waveguide to Coplanar Waveguide Transition for 110 to 170 GHz
    In: Proceedings of the 15th German Microwave Conference (GeMiC 2024) / 15th German Microwave Conference (GeMiC 2024): 11-13 March 2024; Duisburg, Germany / Institute of Electrical and Electronics Engineers (IEEE) (Eds.). Piscataway: IEEE, 2024, pp. 296 – 299
    DOI, Online Full Text
  • Kress, Robin; Mutlu, Enes; Song, Bo; Possberg, Alexander; Clochiatti, Simone; Weimann, Nils
    Investigation of Mutual Injection Locking on Resonant-Tunneling-Diode Oscillators
    In: Proceedings of the 15th German Microwave Conference (GeMiC 2024) / 15th German Microwave Conference (GeMiC 2024): 11-13 March 2024; Duisburg, Germany / Institute of Electrical and Electronics Engineers (IEEE) (Eds.). Piscataway: IEEE, 2024, pp. 41 – 44
    DOI, Online Full Text
  • Mutlu, Enes; Watermann, Jonas; Abts, Jonathan; Tek, Ozgul; Preuss, Christian; Kress, Robin; Sievert, Benedikt; Erni, Daniel; Rennings, Andreas; Weimann, Nils
    Bias-Dependent Spectrum Analysis of Highly Nonlinear Resonant Tunneling Diode Oscillators
    In: Proceedings of the 15th German Microwave Conference (GeMiC 2024) / 15th German Microwave Conference (GeMiC 2024): 11-13 March 2024; Duisburg, Germany / Institute of Electrical and Electronics Engineers (IEEE) (Eds.). Piscataway: IEEE, 2024, pp. 37 – 40
    DOI, Online Full Text
  • Preuss, Christian; Mutlu, Enes; Daedler, Ben; Abts, Jonathan; Watermann, Jonas; Weimann, Nils
    Battery Powered Compact and Lightweight RTD THz Oscillator Module
    In: Proceedings of the 15th German Microwave Conference (GeMiC 2024) / 15th German Microwave Conference (GeMiC 2024): 11-13 March 2024; Duisburg, Germany / Institute of Electrical and Electronics Engineers (IEEE) (Eds.). Piscataway: IEEE, 2024, pp. 89 – 92
    DOI, Online Full Text
  • Koch, Juliane; Liborius, Lisa; Kleinschmidt, Peter; Prost, Werner; Weimann, Nils; Hannappel, Thomas
    Impact of the Tip-to-Semiconductor Contact in the Electrical Characterization of Nanowires
    In: ACS Omega, Vol. 9, 2024, Nr. 5, pp. 5788 – 5797
    DOI (Open Access)

    • 2023

  • Clochiatti, Simone; Kress, Robin; Mutlu, Enes; Vogelsang, Florian; Delden, Marcel Van; Pohl, Nils; Prost, Werner; Weimann, Nils
    InP RTD Detector for THz Applications
    In: 18th European Microwave Integrated Circuits Conference (EuMIC): Proceedings / 18th European Microwave Integrated Circuits Conference (EuMIC), 18.-19.09.2023, Berlin, Germany. Piscataway: Institute of Electrical and Electronics Engineers (IEEE), 2023, pp. 325 – 328
    DOI, Online Full Text
  • Shanin, Nikita; Clochiatti, Simone; Mayer, Kenneth M.; Cottatellucci, Laura; Weimann, Ph.D., Nils; Schober, Robert
    Resonant Tunneling Diode- Based THz SWIPT for Microscopic 6G loT Devices
    In: 2023 IEEE Globecom Workshops, GC Wkshps 2023 / 2023 IEEE Globecom Workshops (GC Wkshps), 04-08 December 2023, Kuala Lumpur, Malaysia. Piscataway: Institute of Electrical and Electronics Engineers Inc., 2023, pp. 552 – 557
    DOI
  • Zhang, Meng; Tian, Zhenming; Sievert, Benedikt; Preuß, Christian; Weimann, Nils; Rennings, Andreas; Erni, Daniel
    Antenna for Free Space-coupled Third-order Sub-harmonic Coherent Detector Array in the 300 GHz Band
    In: 2023 48th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) / 48th International Conference on Infrared, Millimeter, and Terahertz Waves ; IRMMW-THz 2023 ; 17 -22 September 2023, Montreal, Quebec, Canada / Cooke, David G. (Eds.). Piscataway: IEEE Computer Society, 2023
    DOI, Online Full Text
  • Shanin, Nikita; Clochiatti, Simone; Mayer, Kenneth M.; Cottatellucci, Laura; Weimann, Nils; Schober, Robert
    Average Harvested Power in THz WPT Systems Employing Resonant-Tunnelling Diodes
    In: 2023 Sixth International Workshop on Mobile Terahertz Systems (IWMTS) / Sixth International Workshop on Mobile Terahertz Systems (IWMTS), 03-05 July 2023, Bonn, Germany. Piscataway: Institute of Electrical and Electronics Engineers Inc., 2023
    DOI
  • Meier, Johanna; Häuser, Patrick; Blumberg, Christian; Smola, Tim; Prost, Werner; Weimann, Nils; Bacher, Gerd
    Local optical analysis of InGaN/GaN nanorod LED structures grown on Si(111)
    In: Journal of Applied Physics, Vol. 134, 2023, Nr. 4, 044303
    DOI (Open Access)
  • Liborius, Lisa Maria
    Optimierung des Ladungstransports in komplexen Nanodraht pn- und npn-Übergängen
    Duisburg, Essen, 2023
    DOI, Online Full Text (Open Access)
  • Mutlu, Enes; Li, Wen; Sievert, Benedikt; Kreß, Robin; Clochiatti, Simone; Rennings, Andreas; Grygoriev, Anton; Prost, Werner; Erni, Daniel; Weimann, Nils
    Investigation of RTD THz Oscillator with Wide Frequency Tuning Capability
    In: 2023 48th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) / 48th International Conference on Infrared, Millimeter, and Terahertz Waves ; IRMMW-THz 2023 ; 17 -22 September 2023, Montreal, Quebec, Canada / Cooke, David G. (Eds.). Piscataway: IEEE Computer Society, 2023
    DOI, Online Full Text
  • Biurrun-Quel, Carlos; Haddad, Thomas; Sievert, Benedikt; Kress, Robin; Weimann, Nils; Erni, Daniel; Rennings, Andreas; Stöhr, Andreas; Teniente, Jorge; del-Río, Carlos
    Design and Characterization of Terahertz CORPS Beam Forming Networks
    In: Journal of Infrared, Millimeter, and Terahertz Waves, Vol. 44, 2023, Nr. 5-6, pp. 430 – 457
    DOI (Open Access)
  • Mutlu, Enes; Clochiatti, Simone; Sievert, Benedikt; Kreß, Robin; Poßberg, Alexander; Zhang, Meng; Preuß, Christian; Zhang, Ao; Prost, Werner; Erni, Daniel; Weimann, Nils
    Large-Signal Device Model Verification for Resonant Tunneling Diode Oscillator
    In: 2023 Sixth International Workshop on Mobile Terahertz Systems (IWMTS) / Sixth International Workshop on Mobile Terahertz Systems (IWMTS), 03-05 July 2023, Bonn, Germany. Piscataway: Institute of Electrical and Electronics Engineers Inc., 2023
    DOI
  • Preuß, Christian; Clochiatti, Simone; Kreß, Robin; Mutlu, Enes; Vogelsang, Florian; Prost, Werner; Pohl, Nils; Weimann, Nils
    Packaging Technology for the Realization of Tx and Rx Modules Based on RTD Devices
    In: 2023 48th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) / 48th International Conference on Infrared, Millimeter, and Terahertz Waves ; IRMMW-THz 2023 ; 17 -22 September 2023, Montreal, Quebec, Canada / Cooke, David G. (Eds.). Piscataway: IEEE Computer Society, 2023
    DOI, Online Full Text
  • Makhlouf, Sumer; Cojocari, Oleg; Hofmann, Martin; Nagatsuma, Tadao; Preu, Sascha; Weimann, Nils; Hübers, Heinz-Wilhelm; Stöhr, Andreas
    Terahertz Sources and Receivers : From the Past to the Future
    In: IEEE Journal of Microwaves, Vol. 3, 2023, Nr. 3, pp. 894 – 912
    DOI, Online Full Text (Open Access)
  • Sheikh, Fawad; Prokscha, Andreas; Batra, Aman; Lessy, Dien; Salah, Baha; Sievert, Benedikt; Degen, Marvin; Rennings, Andreas; Jalali, Mandana; Svejda, Jan Taro; Alibeigloo, Pooya; Preuß, Christian; Mutlu, Enes; Kreß, Robin; Clochiatti, Simone; Kolpatzeck, Kevin; Kubiczek, Tobias; Ullmann, Ingrid; Root, Konstantin; Brix, Fabian; Krämer, Ute; Vossiek, Martin; Balzer, Jan C.; Weimann, Nils; Kaiser, Thomas; Erni, Daniel
    Towards Continuous Real-Time Plant and Insect Monitoring by Miniaturized THz Systems
    In: IEEE Journal of Microwaves, Vol. 3, 2023, Nr. 3, pp. 913 – 937
    DOI, Online Full Text (Open Access)
  • Grzeslo, Marcel; Dülme, Sebastian; Clochiatti, Simone; Neerfeld, Tom; Haddad, Thomas; Lu, Peng; Tebart, Jonas; Makhlouf, Sumer; Biurrun-Quel, Carlos; Fernández-Estévez, José Luis; Lackmann, Jörg; Weimann, Nils; Stöhr, Andreas
    High saturation photocurrent THz waveguide-type MUTC-photodiodes reaching mW output power within the WR3.4 band
    In: Optics Express (OpEx), Vol. 31, 2023, Nr. 4, pp. 6484 – 6498
    DOI (Open Access)

    • 2022

  • Schmidt, Robin; Clochiatti, Simone; Mutlu, Enes; Weimann, Nils; Ferrero, Andrea; Dieudonne, Michael; Schreurs, Dominique M. M.-P.
    Compensating Probe Misplacements in On-Wafer S -Parameters Measurements
    In: IEEE Transactions on Microwave Theory and Techniques (T-MTT), Vol. 70, 2022, Nr. 11, pp. 5213 – 5223
    DOI, Online Full Text (Open Access)
  • Preuss, Christian; Mutlu, Enes; Kress, Robin; Clochiatti, Simone; Lu, Peng; Stöhr, Andreas; Prost, Werner; Weimann, Nils
    FR4 Test Board for Measurements on InP Resonant Tunneling Diode THz Oscillators Integrated via Flip Chip Bonding Technology
    In: 2022 15th UK-Europe-China Workshop on Millimetre-Waves and Terahertz Technologies (UCMMT) / UCMMT2022: 15th UK-Europe-China Workshop on Millimeter-Waves and Terahertz Technologies; 17-18 October 2022; Tønsberg, Norway (online) / Institute of Electrical and Electronics Engineers (IEEE) (Eds.). Piscataway: IEEE, 2022
    DOI, Online Full Text
  • Poßberg, Alexander; Vogelsang, Florian; Pohl, Nils; Hossain, Maruf; Yacoub, Hady; Johansen, Tom K.; Heinrich, Wolfgang; Weimann, Nils
    An Injection-Lockable InP-DHBT Source Operating at 421 GHz with -2.4 dBm Output Power and 1.7% DC-to-RF Efficiency
    In: 2022 IEEE/MTT-S International Microwave Symposium / 2022 IEEE/MTT-S International Microwave Symposium, 19-24 June 2022, Denver / Institute of Electrical and Electronics Engineers (IEEE) (Eds.). Piscataway: IEEE, 2022, pp. 336 – 339
    DOI
  • Clochiatti, Simone; Schmidt, Robin; Mutlu, Enes; Dieudonne, Michael; Prost, Werner; Schreurs, Dominique; Weimann, Nils
    On-Wafer Characterization and Modelling of InP Resonant Tunnelling Diodes up to 500 GHz
    In: Proceedings of the 52nd European Microwave Conference (EuMC) / 52nd European Microwave Conference (EuMC): 27-29 September 2022; Milan, Italy. Piscataway: IEEE, 2022, 9924370
    DOI, Online Full Text
  • Koch, Juliane; Liborius, Lisa; Kleinschmidt, Peter; Weimann, Nils; Prost, Werner; Hannappel, Thomas
    Electrical Properties of the Base-Substrate Junction in Freestanding Core-Shell Nanowires
    In: Advanced Materials Interfaces, Vol. 9, 2022, Nr. 30, 2200948
    DOI (Open Access)
  • Müller, Konrad; Poßberg, Alexander; Coers, M.; Zhang, Hao; Weimann, Nils
    TCAD Simulation of InP DHBTs With an In53.2Ga46.8As Base and InGaAsP Collector Grading
    In: 2022 Fifth International Workshop on Mobile Terahertz Systems (IWMTS): Proceedings / Fifth International Workshop on Mobile Terahertz Systems (IWMTS), 04.-06.07.2022, Duisburg. New York: IEEE, 2022
    DOI, Online Full Text
  • Prost, Werner; Arzi, Khaled; Clochiatti, Simone; Mutlu, Enes; Suzuki, Safurni; Asad, Mohsen; Weimann, Nils
    Triple Barrier Resonant Tunneling Diodes for THz emission and sensing
    In: Proceedings of the SPIE Optical Engineering + Applications Conference 2022: Terahertz Emitters, Receivers, and Applications / Razeghi, Manijeh; Baranov, Alexei N.; SPIE Optical Engineering + Applications Conference 2022; 21 - 22 August 2022; San Diego, USA. Bellingham: SPIE, 2022, 122300D
    DOI
  • Clochiatti, Simone; Yavari, Parya; Schmidt, Robin; Hauser, Patrick; Mutlu, Enes; Preus, Christian; Prost, Werner; Weimann, Nils
    Monolithic n+-InGaAs Thin Film Resistor from DC up to 0.5 THz
    In: 2022 Fifth International Workshop on Mobile Terahertz Systems (IWMTS): Proceedings / Fifth International Workshop on Mobile Terahertz Systems (IWMTS), 04.-06.07.2022, Duisburg. New York: IEEE, 2022
    DOI, Online Full Text
  • Kreß, Robin; Mutlu, Enes; Kubiczek, Tobias; Kossmann, J.; Preuß, Christian; Schultze, Thorsten; Balzer, Jan C.; Prost, Werner; Weimann, Nils
    Transfer-Substrate Process for InP RTD-Oscillator Characterization
    In: 2022 Fifth International Workshop on Mobile Terahertz Systems (IWMTS): Proceedings / Fifth International Workshop on Mobile Terahertz Systems (IWMTS), 04.-06.07.2022, Duisburg. New York: IEEE, 2022
    DOI, Online Full Text

    • 2021

  • Cimbri, Davide; Weimann, Nils; Al-Taai, Qusay Raghib Ali; Ofiare, Afesomeh; Wasige, Edward
    Ohmic Contacts Optimisation for High-Power InGaAs/AlAs Double-Barrier Resonant Tunnelling Diodes Based on a Dual-Exposure E-Beam Lithography Approach
    In: International Journal of Nanoelectronics and Materials, Vol. 14, 2021, Nr. Special Issue InCAPE, pp. 11 – 19
    (Open Access)
  • Hrobak, Michael; Thurn, Karsten; Moll, Jochen; Hossain, Maruf; Shrestha, Amit; Al-Sawaf, Thualfiqar; Stoppel, Dimitri; Weimann, Nils; Rämer, Adam; Heinrich, Wolfgang; Martinez, Javier; Vossiek, Martin; Johansen, Tom K.; Krozer, Viktor; Resch, Marion; Bosse, Jürgen; Sterns, Michael; Loebbicke, Kai; Zorn, Stefan; Eissa, Mohamed; Lisker, Marco; Herzel, Frank; Miesen, Robert; Vollmann, Klaus
    A Modular MIMO Millimeter-Wave Imaging Radar System for Space Applications and Its Components
    In: Journal of Infrared, Millimeter, and Terahertz Waves, Vol. 42, 2021, Nr. 3, pp. 275 – 324
    DOI
  • Clochiatti, Simone; Mutlu, Enes; Preuß, Christian; Kreß, Robin; Prost, Werner; Weimann, Nils
    Broadband THz detection using InP triple-barrier resonant tunneling diode with integrated antenna
    In: Proceedings of the 4th International Workshop on Mobile Terahertz Systems / IWMTS 2021; 5-6 July 2021; Essen, Germany. Piscataway: IEEE, 2021, 9486794
    DOI, Online Full Text
  • Heinrich, Wolfgang; Hossain, Maruf; Sinha, Siddhartha; Schmuckle, Franz-Josef; Doerner, Ralf; Krozer, Viktor; Weimann, Nils
    Connecting Chips With More Than 100 GHz Bandwidth
    In: IEEE Journal of Microwaves, Vol. 1, 2021, Nr. 1, pp. 364 – 373
    DOI, Online Full Text (Open Access)
  • Zhang, Meng; Wang, Peng-Yuan; Rennings, Andreas; Clochiatti, Simone; Prost, Werner; Weimann, Nils; Erni, Daniel
    Design of a 1-to-4 subarray element for wireless subharmonic injection in the THz band
    In: Proceedings of the 4th International Workshop on Mobile Terahertz Systems / IWMTS 2021; 5-6 July 2021; Essen, Germany. Piscataway: IEEE, 2021, 9486781
    DOI, Online Full Text (Open Access)
  • Kreß, Robin; Preuß, Christian; Mutlu, Enes; Clochiatti, Simone; Prost, Werner; Weimann, Nils
    THz detectors and emitters with On-Chip antenna aligned on hyper-hemispherical silicon lenses
    In: Proceedings of the 4th International Workshop on Mobile Terahertz Systems / IWMTS 2021; 5-6 July 2021; Essen, Germany. Piscataway: IEEE, 2021
    DOI, Online Full Text (Open Access)
  • Häuser, Patrick; Blumberg, Christian; Liborius, Lisa; Prost, Werner; Weimann, Nils
    Polarity-controlled AlN/Si templates by in situ oxide desorption for variably arrayed MOVPE-GaN nanowires
    In: Journal of Crystal Growth, Vol. 566-567, 2021, pp. 126162
    DOI
  • Villani, Matteo; Clochiatti, Simone; Prost, Werner; Weimann, Nils; Oriols, Xavier
    There is Plenty of Room for THz Tunneling Electron Devices Beyond the Transit Time Limit
    In: IEEE Electron Device Letters, Vol. 42, 2021, Nr. 2, pp. 224 – 227
    DOI, Online Full Text (Open Access)
  • Liborius, Lisa; Bieniek, Jan; Poßberg, Alexander; Tegude, Franz-Josef; Prost, Werner; Poloczek, Artur; Weimann, Nils
    Tunneling-Related Leakage Currents in Coaxial GaAs/InGaP Nanowire Heterojunction Bipolar Transistors
    In: Physica Status Solidi (B): Basic Solid State Physics, Vol. 258, 2021, Nr. 2, pp. 2000395
    DOI (Open Access)

    • 2020

  • Blumberg, Christian; Häuser, Patrick; Wefers, Fabian; Meier, Johanna; Bacher, Gerd; Weimann, Nils; Prost, Werner
    Growth of site- And polarity-controlled GaN nanowires on Silicon for high-speed LEDs
    In: 8th GMM-Workshops on Micro-Nano-Integration / Virtual, Online; ; 15 - 17 September 2020. Berlin: VDE, 2020, pp. 60 – 64
  • Weimann, Nils
    InP HBT technology for THz applications
    In: IEEE International Symposium on Radio-Frequency Integration Technology / RFIT 2020; Hiroshima, Japan; 2 - 4 September 2020. Piscataway: IEEE, 2020, pp. 190 – 192
    DOI, Online Full Text
  • Cao, Jimin
    Design of an RF-power amplifier and optimization of the thermal properties
    Duisburg, Essen: DuEPublico, 2020
    DOI, Online Full Text (Open Access)
  • Poßberg, Alexander; Hossain, Maruf; Weimann, Nils
    Design of a 300 GHz externally Injection-Lockable Push-Push Oscillator for Beam Steering Applications
    In: 3rd International Workshop on Mobile Terahertz Systems / IWMTS 2020; Essen, Germany; 1-2 July 2020. Piscataway: IEEE, 2020, pp. 9166388
    DOI, Online Full Text
  • Zapf, Maximilian; Ritzer, Maurizio; Liborius, Lisa; Johannes, Andreas; Hafermann, Martin; Schönherr, Sven; Segura-Ruiz, Jaime; Martínez-Criado, Gema; Prost, Werner; Ronning, Carsten
    Hot electrons in a nanowire hard X-ray detector
    In: Nature Communications, Vol. 11, 2020, Nr. 1, pp. 4729
    DOI (Open Access)
  • Blumberg, Christian; Liborius, Lisa; Ackermann, Julia; Tegude, Franz-Josef; Poloczek, Artur; Prost, Werner; Weimann, Nils
    Spatially controlled VLS epitaxy of gallium arsenide nanowires on gallium nitride layers
    In: CrystEngComm, Vol. 22, 2020, Nr. 7, pp. 1239 – 1250
    DOI
  • Arzi, Khaled; Suzuki, Safumi; Rennings, Andreas; Erni, Daniel; Weimann, Nils; Asada, Masahiro; Prost, Werner
    Subharmonic Injection Locking for Phase and Frequency Control of RTD-Based THz Oscillator
    In: IEEE Transactions on Terahertz Science and Technology, Vol. 10, 2020, Nr. 2, pp. 221 – 224
    DOI, Online Full Text (Open Access)
  • Villani, Matteo; Oriols, Xavier; Clochiatti, Simone; Weimann, Nils; Prost, Werner
    The accurate predictions of THz quantum currents requires a new displacement current coefficient instead of the traditional transmission one
    In: 3rd International Workshop on Mobile Terahertz Systems / IWMTS 2020; Essen, Germany; 1-2 July 2020. Piscataway: IEEE, 2020, pp. 9166410
    DOI, Online Full Text
  • Clochiatti, Simone; Aikawa, Kotaro; Arzi, Khaled; Mutlu, Enes; Suhara, Michihiko; Weimann, Nils; Prost, Werner
    Large-Signal Modelling of sub-THz InP Triple-Barrier Resonant Tunneling Diodes
    In: 3rd International Workshop on Mobile Terahertz Systems / IWMTS 2020; Essen, Germany; 1-2 July 2020. Piscataway: IEEE, 2020, pp. 9166270
    DOI, Online Full Text
  • Blumberg, Christian; Häuser, Patrick; Wefers, Fabian; Jansen, Dennis; Tegude, Franz-Josef; Weimann, Nils; Prost, Werner
    A systematic study of Ga- And N-polar GaN nanowire-shell growth by metal organic vapor phase epitaxy
    In: CrystEngComm, Vol. 22, 2020, Nr. 33, pp. 5522 – 5532
    DOI
  • Hillger, Philipp; van Delden, Marcel; Thanthrige, Udaya Sampath Miriya; Ahmed, Aya Mostafa; Wittemeier, Jonathan; Arzi, Khaled; Andree, Marcel; Sievert, Benedikt; Prost, Werner; Rennings, Andreas; Erni, Daniel; Musch, Thomas; Weimann, Nils; Sezgin, Aydin; Pohl, Nils; Pfeiffer, Ullrich R.
    Toward mobile integrated electronic systems at THz frequencies
    In: Journal of Infrared, Millimeter, and Terahertz Waves, Vol. 41, 2020, Nr. 7, pp. 846 – 869
    DOI
  • Liborius, Lisa; Bieniek, Jan; Nägelein, Andreas; Tegude, Franz-Josef; Prost, Werner; Hannappel, Thomas; Poloczek, Artur; Weimann, Nils
    n-Doped InGaP Nanowire Shells in GaAs/InGaP Core–Shell p–n Junctions
    In: Physica Status Solidi (B): Basic Solid State Physics, Vol. 257, 2020, Nr. 2, pp. 1900358
    DOI (Open Access)

    • 2019

  • Weimann, Nils; Arzi, Khaled; Clochiatti, Simone; Prost, Werner
    Indiumphosphid-Resonante Tunneldioden für THz-Anwendungen
    In: MikroSystemTechnik Kongress 2019: Mikroelektronik | MEMS-MOEMS | Systemintegration – Säulen der Digitalisierung und künstlichen Intelligenz / MikroSystemTechnik Kongress 28. – 30. Oktober 2019 in Berlin. Berlin: VDE, 2019, pp. 400 – 403
  • Hossain, Maruf M.; Weimann, Nils; Brahem, Mohamed; Ostinelli, Olivier J.S.; Bolognesi, Colombos R.; Heinrich, Wolfgang; Krozer, Viktor
    A 0.5 THz Signal Source with -11 dBm Peak Output Power Based on InP DHBT
    In: 49th European Microwave Conference / EuMC 2019, 29 Sept. - 4 Oct. 2019, Paris, France. Piscataway: IEEE, 2019, pp. 856 – 859
    DOI
  • Hossain, Maruf M.; Weimann, Nils; Brahem, Mohamed; Ostinelli, Olivier J.S.; Bolognesi, Colombos R.; Heinrich, Wolfgang; Krozer, Viktor
    A 0.5 THz Signal Source with -11 dBm Peak Output Power Based on InP DHBT
    In: 14th European Microwave Integrated Circuits Conference / EuMW 2019, 29 Sep - 4 Oct 2019, Paris. Piscataway: IEEE, 2019, pp. 302 – 305
    DOI
  • Blumberg, Christian; Wefers, Fabian; Tegude, Franz-Josef; Weimann, Nils; Prost, Werner
    Mask-less MOVPE of arrayed n-GaN nanowires on site- and polarity-controlled AlN/Si templates
    In: CrystEngComm, Vol. 21, 2019, Nr. 48, pp. 7476 – 7488
    DOI
  • Aikawa, Kotaro; Suhara, Michihiko; Asakawa, Kiyoto; Arzi, Khaled; Weimann, Nils; Prost, Werner
    Characterization of the Effective Tunneling Time and Phase Relaxation Time in Triple-Barrier Resonant Tunneling Diodes
    In: Compound Semiconductor Week 2019 (CSW): Proceedings / CSW 2019; Nara, Japan; 19 - 23 May 2019. Piscataway: IEEE, 2019, pp. 8819043
    DOI, Online Full Text
  • Korte, Stefan; Nägelein, Andreas; Steidl, Matthias; Prost, Werner; Cherepanov, Vasily; Kleinschmidt, Peter; Hannappel, Thomas; Voigtländer, Bert
    Charge transport in GaAs nanowires : Interplay between conductivity through the interior and surface conductivity
    In: Journal of Physics: Condensed Matter, Vol. 31, 2019, Nr. 7, 074004
    DOI
  • Brahem, Mohamed; Mogilatenko, Anna V.; Stoppel, Dimitri; Berger, Dirk; Hochheim, Stefan; Rentner, D.; Ostermay, Ina; Reiner, Maria; Boppel, Sebastian; Nosaeva, Ksenia S.; Weimann, Nils
    Thermally stable iridium contacts to highly doped p-In₀:₅₃Ga₀:₄₇As for indium phosphide double heterojunction bipolar transistors
    In: Microelectronic Engineering, Vol. 215, 2019, pp. 111017
    DOI
  • Stoppel, Dimitri; Ostermay, Ina; Hrobak, Michael; Shivan, Tanjil; Hossain, Maruf; Reiner, Maria; Thiele, Nico; Nosaeva, Ksenia; Brahem, Mohamed; Krozer, Viktor; Boppel, Sebastian; Halder, Nripendra; Weimann, Nils
    NiCr resistors for terahertz applications in an InP DHBT process
    In: Microelectronic Engineering, Vol. 208, 2019, pp. 1 – 6
    DOI
  • Arzi, Khaled; Clochiatti, Simone; Mutlu, Enes; Kowaljow, Alexander; Sievert, Benedikt; Erni, Daniel; Weimann, Nils; Prost, Werner
    Broadband detection capability of a triple barrier resonant tunneling diode
    In: 2nd International Workshop on Mobile Terahertz Systems / IWMTS 2019; Bad Neuenahr, Germany; 1 - 3 July 2019. Piscataway: IEEE, 2019, pp. 8823724
    DOI, Online Full Text
  • Maculewicz, Franziska; Wagner, Thorsten; Arzi, Khaled; Hartmann, Nils; Weimann, Nils; Schmechel, Roland
    Experimental evidence for the separation of thermally excited bipolar charge carries within a p-n junction : A new approach to thermoelectric materials and generators
    In: Journal of Applied Physics, Vol. 125, 2019, Nr. 18, pp. 184502
    DOI
  • Speich, Claudia; Dissinger, Frank; Liborius, Lisa; Hagemann, Ulrich; Waldvogel, Siegfried R.; Tegude, Franz-Josef; Prost, Werner
    Process Development for Wet-Chemical Surface Functionalization of Gallium Arsenide Based Nanowires
    In: Physica Status Solidi (B): Basic Solid State Physics, 2019, pp. 1800678
    DOI
  • Zhang, Meng; Rennings, Andreas; Clochiatti, Simone; Arzi, Khaled; Prost, Werner; Weimann, Nils; Erni, Daniel
    Transmitarray element design for subharmonic injection-locked RTD oscillators in THz band
    In: Progress in Electromagnetics Research Symposium - Fall (PIERS - FALL): Proceedings / Fall 2019; Xiamen, China; 17 - 20 December 2019. Piscataway: IEEE, 2019, pp. 2518 – 2522
    DOI, Online Full Text (Open Access)
  • Arzi, Khaled; Clochiatti, Simone; Suzuki, Safumi; Rennings, Andreas; Erni, Daniel; Weimann, Nils; Asada, Masahiro; Prost, Werner
    Triple-Barrier Resonant-Tunnelling Diode THz Detectors with on-chip antenna
    In: GeMiC 2019 - 12th German Microwave Conference / GeMiC 2019; Stuttgart, Germany; 25 - 27 March 2019. Piscataway: IEEE, 2019, pp. 17 – 19
    DOI, Online Full Text
  • Liborius, Lisa; Heyer, Fabian; Arzi, Khaled; Speich, Claudia; Prost, Werner; Tegude, Franz-Josef; Weimann, Nils; Poloczek, Artur
    Toward Nanowire HBT : Reverse Current Reduction in Coaxial GaAs/InGaP n(i)p and n(i)pn Core-Multishell Nanowires
    In: Physica Status Solidi (A) - Applications and Materials Science, Vol. 216, 2019, Nr. 1, pp. 1800562
    DOI
  • Arzi, Khaled; Clochiatti, Simone; Suzuki, S.; Rennings, Andreas; Erni, Daniel; Weimann, Nils; Asada, M.; Prost, Werner
    Triple-barrier resonant tunneling diode
    1st MARIE IRTG Spring School, International Research Training Group (IRTG), DFG CRC/TRR 196 MARIE, 28-29 March 2019, Dortmund, Germany,
    2019

    • 2018

  • Shivan, Tanjil; Weimann, Nils; Hossain, Maruf M.; Stoppel, Dimitri; Boppel, Sebastian; Ostinelli, Olivier J.S.; Doerner, Ralf; Bolognesi, Colombos R.; Krozer, Viktor; Heinrich, Wolfgang
    A Highly Efficient Ultrawideband Traveling-Wave Amplifier in InP DHBT Technology
    In: IEEE Microwave and Wireless Components Letters, Vol. 28, 2018, Nr. 11, pp. 1029 – 1031
    DOI, Online Full Text
  • Johansen, Tom K.; Doerner, Ralf; Weimann, Nils; Hossain, Maruf; Krozer, Viktor; Heinrich, Wolfgang
    EM simulation assisted parameter extraction for transferred-substrate InP HBT modeling
    In: Mineralogical Magazine, Vol. 10, 2018, Nr. 5-6, pp. 700 – 708
    DOI
  • Weimann, Nils; Boppel, S.; Hossain, M.; Ostinelli, O.; Bolognesi, C.R.; Johansen, T.; Krozer, V.; Heinrich, W.
    THZ Indium Phosphide Integrated Heterojunction Bipolar Transistor Technology for mm-Wave Beam Steering Appliccations
    The 8th ESA Workshop on Millimetre-Wave Technology and Applications; ESA-ESTEC; Noordwijk, the Netherlands; 10.12 - 12.12.2018,
    Noordwijk, 2018
  • Stoppel, D.; Hrobak, M.; Külberg, A.; Schönfeld, S.; Rentner, D.; Krüger, O.; Nosaeva, K.; Brahem, M.; Boppel, S.; Weimann, Nils
    Through Silicon via (TSV) Process for Suppression of Substrate Modes in a Transferred‐Substrate InP DHBT MMIC Technology
    45th International Symposium on Compound Semiconductors, CSW 2018; Boston, USA; 29.05. - 01.06.2018,
    Boston, 2018
  • Hossain, Maruf; Eissa, Mohamed H.; Hrobak, Michael; Stoppel, Dimitri; Weimann, Nils; Malignaggi, Andrea; Mai, Andreas; Kissinger, Dietmar; Heinrich, Wolfgang; Krozer, Viktor
    A Hetero-Integrated W-Band Transmitter Module in InP-on-BiCMOS Technology
    In: Proceedings of the 13th European Microwave Integrated Circuits Conference / EuMIC 2018; Madrid, Spain; 24 - 25 September 2018. Piscataway: IEEE, 2018, pp. 97 – 100
    DOI, Online Full Text
  • Shivan, Tanjil; Hossain, Maruf; Stoppel, Dimitri; Weimann, Nils; Boppel, Sebastian; Doerner, Ralf; Heinrich, Wolfgang; Krozer, Viktor
    220–325 GHz high-isolation SPDT switch in InP DHBT technology
    In: Electronics Letters, Vol. 54, 2018, Nr. 21, pp. 1222 – 1224
    DOI, Online Full Text
  • Shivan, Tanjil; Hossain, Maruf M.; Stoppel, Dimitri; Weimann, Nils; Schulz, Steffen; Doerner, Ralf; Krozer, Viktor; Heinrich, Wolfgang
    An Ultra-Broadband Low-Noise Distributed Amplifier in InP DHBT Technology
    In: Proceedings of the 13th European Microwave Integrated Circuits Conference / EuMIC 2018; Madrid, Spain; 24 - 25 September 2018. Piscataway: IEEE, 2018, pp. 241 – 244
    DOI, Online Full Text
  • Hossain, Maruf; Weimann, Nils; Heinrich, Wolfgang; Krozer, Viktor
    Highly Efficient D-Band Fundamental Frequency Source Based on InP-DHBT Technology
    In: Proceedings of the 48th European Microwave Conference / EuMC 2018; Madrid, Spain; 25 - 27 September 2018. Piscataway: IEEE, 2018, pp. 1005 – 1008
    DOI, Online Full Text
  • Shivan, Tanjil; Hossain, Maruf; Stoppel, I.D.; Weimann, Nils; Schulz, Steffen; Doerner, Ralf; Krozer, Viktor; Heinrich, Wolfgang
    An Ultra-broadband Low-Noise Distributed Amplifier in InP DHBT Technology
    In: Proceedings of the 48th European Microwave Conference / EuMC 2018; Madrid, Spain; 25 - 27 September 2018. Piscataway: IEEE, 2018, pp. 1209 – 1212
    DOI, Online Full Text
  • Arzi, Khaled; Rennings, Andreas; Erni, Daniel; Weimann, Nils; Prost, Werner; Suzuki, Safurni; Asada, Masahiro
    Millimeter-wave Signal Generation and Detection via the same Triple Barrier RTD and on-chip Antenna
    In: Proceedings of the 1st International Workshop on Mobile Terahertz Systems / IWMTS 2018, Duisburg, Germany, 2 - 4 July 2018. Piscataway: IEEE, 2018, pp. 8454700
    DOI, Online Full Text (Open Access)
  • Arzi, Khaled; Suzuki, S.; Rennings, Andreas; Erni, Daniel; Weimann, Nils; Asada, M.; Prost, Werner
    On the sensitivity of triple-barrier resonant-tunneling (sub-) mm-wave detectors
    Progress in Electromagnetics Research Symposium, 2018, Toyama, Japan,
    Toyama, 2018
  • Blumberg, Christian; Grosse, Simon; Weimann, Nils; Tegude, Franz-Josef; Prost, Werner
    Polarity- and Site-Controlled Metal Organic Vapor Phase Epitaxy of 3D-GaN on Si(111)
    In: Physica Status Solidi (B): Basic Solid State Physics, Vol. 255, 2018, Nr. 5, pp. 1700485
    DOI
  • Arzi, K.; Suzuki, S.; Rennings, Andreas; Erni, Daniel; Weimann, Nils; Asada, M.; Prost, Werner
    Subharmonic signal generation and injection locking in resonant-tunneling-diode Terahertz oscillator
    79th Japan Society of Applied Physics (JSAP 2018) Autumn Meeting, Nagoya Congress Center, Nagoya, Japan Sept. 18-21, 2018,
    Nagoya, 2018
  • Shivan, Tanjil; Weimann, Nils; Hossain, Maruf; Johansen, Tom Keinicke; Stoppel, Dimitri; Schulz, Steffen; Ostinelli, Olivier; Doerner, Ralf; Bolognesi, Colombro R.; Krozer, Viktor; Heinrich, Wolfgang
    A 95 GHz bandwidth 12 dBm output power distributed amplifier in InP-DHBT technology for optoelectronic applications
    In: GeMiC 2018 - 11th German Microwave Conference / GeMiC 2018; Freiburg, Germany; 12 - 14 March 2018. Piscataway: IEEE, 2018, pp. 17 – 20
    DOI, Online Full Text
  • Rennings, Andreas; Sievert, Benedikt; Lui, W.; Arzi, Khaled; Prost, Werner; Erni, Daniel
    Broadband millimeter-wave detector based on triple-barrier resonant tunneling diode and tailored archimedian spiral antenna
    In: Proceedings of 2017 Asia-Pacific Microwave Conference (APMC) / APMC 2017, 13. - 16. November 2017, Kuala Lumpur, Malaysia / Pasya, Idnin; Seman, Fauziahanim Che (Eds.). Piscataway: IEEE, 2018, pp. 775 – 778
    DOI, Online Full Text (Open Access)
  • Arzi, Khaled; Suzuki, Safumi; Rennings, Andreas; Erni, Daniel; Weimann, Nils; Asada, Masahiro; Prost, Werner
    Triple barrier RTD integrated in a slot antenna for mm-wave signal generation and detection
    In: Compound Semiconductor Week (CSW 2018) / 14th Int. Symposium on Compound Semiconductors (ISCS), and the 30th Int. Conference on Indium Phosphide and Related Materials (IPRM), May 29 – June 1, 2018, Massachussetts Institute of Technology (MIT), Cambridge, MA, USA. Cambridge: Massachussetts Institute of Technology (MIT), 2018, pp. 54
    Online Full Text
  • Schmitt, Sebastian W.; Sarau, George; Speich, Claudia; Döhler, Gottfried H.; Liu, Ziheng; Hao, Xiaojing; Rechberger, Stefanie; Dieker, Christel; Spiecker, Erdmann; Prost, Werner; Tegude, Franz-Josef; Conibeer, Gavin; Green, Martin A.; Christiansen, Silke H.
    Germanium Template Assisted Integration of Gallium Arsenide Nanocrystals on Silicon : A Versatile Platform for Modern Optoelectronic Materials
    In: Advanced Optical Materials, Vol. 6, 2018, Nr. 8, 1701329
    DOI
  • Nägelein, Andreas; Steidl, Matthias; Korte, Stefan; Voigtländer, Bert; Prost, Werner; Kleinschmidt, Peter; Hannappel, Thomas
    Investigation of charge carrier depletion in freestanding nanowires by a multi-probe scanning tunneling microscope
    In: Nano Research, Vol. 11, 2018, Nr. 11, pp. 5924 – 5934
    DOI
  • Weimann, Nils G.; Johansen, Tom K.; Stoppel, Dimitri; Matalla, Matthias; Brahem, Mohamed; Nosaeva, Ksenia; Boppel, Sebastian; Volkmer, Nicole; Ostermay, Ina; Krozer, Viktor; Ostinelli, Olivier; Bolognesi, Colombo R.
    Transferred-Substrate InP/GaAsSb Heterojunction Bipolar Transistor Technology With fmax ~ 0.53 THz
    In: IEEE Transactions on Electron Devices (T-ED), Vol. 65, 2018, Nr. 9, pp. 3704 – 3710
    DOI, Online Full Text (Open Access)

    • 2017

  • Hossain, Maruf M.; Meliani, Chafik; Schukfeh, Muhammed Ihab; Weimann, Nils; Lisker, Marco; Krozer, Viktor; Heinrich, Wolfgang
    An active balanced up-converter module in InP-on-BiCMOS technology
    In: IEEE MTT-S International Microwave Symposium / IMS 2017; Honololu, United States; 4 - 9 June 2017. Piscataway: IEEE, 2017, pp. 953 – 956
    DOI, Online Full Text
  • Sinha, Siddhartha; Doerner, Ralf; Schmuckle, Franz-Josef; Monayakul, Sirinpa; Hrobak, Michael; Weimann, Nils; Krozer, Viktor; Heinrich, Wolfgang
    Flip-Chip Approach for 500 GHz Broadband Interconnects
    In: IEEE Transactions on Microwave Theory and Techniques (T-MTT), Vol. 65, 2017, Nr. 4, pp. 1215 – 1225
    DOI, Online Full Text
  • Weimann, Nils; Monayakul, Sirinpa; Sinha, Siddhartha; Schmuckle, Franz-Josef; Hrobak, Michael; Stoppel, Dimitri; John, Wilfred; Kruger, Olaf; Doerner, Ralf; Janke, Bernd; Krozer, Viktor; Heinrich, Wolfgang
    Manufacturable low-cost flip-chip mounting technology for 300-500-GHz assemblies
    In: IEEE Transactions on Components, Packaging and Manufacturing Technology, Vol. 7, 2017, Nr. 4, pp. 494 – 501
    DOI, Online Full Text
  • Johansen, Tom K.; Weimann, Nils; Doerner, Ralf; Hossain, Maruf; Krozer, Viktor; Heinrich, Wolfgang
    EM simulation assisted parameter extraction for the modeling of transferred-substrate InP HBTs
    In: Proceedings of the 12th European Microwave Integrated Circuits Conference / EuMIC 2017; Nuremburg; Germany; 9 - 12 October 2017. Piscataway: IEEE, 2017, pp. 240 – 243
    DOI, Online Full Text
  • Wentzel, Andreas; Hossain, Maruf; Stoppel, DImitri; Weimann, Nils; Krozer, Viktor; Heinrich, Wolfgang
    An efficient W-band InP DHBT digital power amplifier
    In: International Journal of Microwave and Wireless Technologies, Vol. 9, 2017, Nr. 6, pp. 1241 – 1249
    DOI
  • Kaule, Evelyne; Doerner, Ralf; Weimann, Nils; Rudolph, Matthias
    Noise modeling of transferred-substrate InP-DHBTs
    In: IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems / COMCAS 2017; Tel-Aviv, Israel; 13 - 15 November 2017. Piscataway: IEEE, 2017, pp. 1 – 4
    DOI, Online Full Text
  • Nagelein, Andreas; Liborius, Lisa; Steidl, Matthias; Blumberg, Christian; Kleinschmidt, Peter; Poloczek, Artur; Hannappel, Thomas
    Comparative analysis on resistance profiling along tapered semiconductor nanowires : Multi-tip technique versus transmission line method
    In: Journal of Physics: Condensed Matter, Vol. 29, 2017, Nr. 39, 394007
    DOI
  • Weimann, Nils; Hossain, Maruf; Krozer, Viktor; Heinrich, Wolfgang; Lisker, Marco; Mai, Andreas; Tillack, Bernd
    Tight Focus Toward the Future: Tight Material Combination for Millimeter-Wave RF Power Applications : InP HBT SiGe BiCMOS Heterogeneous Wafer-Level Integration
    In: IEEE Microwave Magazine, Vol. 18, 2017, Nr. 2, pp. 74 – 82
    DOI, Online Full Text
  • Arzi, Khaled; Keller, Gregor; Rennings, Andreas; Erni, Daniel; Tegude, Franz-Josef; Prost, Werner
    Frequency locking of a free running resonant tunneling diode oscillator by wire-less sub-harmonic injection locking
    In: 10th UK-Europe-China Workshop on Millimetre Waves and Terahertz Technologies, UCMMT 2017 / UCMMT 2017; Liverpool, United Kingdom; 11 - 13 September 2017. Piscataway: IEEE, 2017, pp. 8068485
    DOI, Online Full Text
  • Benson, Niels; Bitzer, Lucas A.; Speich, Claudia; Schäfer, David; Erni, Daniel; Prost, Werner; Tegude, Franz-Josef; Schmechel, Roland (Eds.)
    Modeling of electron beam induced GaAs nanowire attraction
    In: Abstractband: MiFuN: Microstructural Functionality at the Nanoscale / International Workshop on Microstructural Functionality at the Nanoscale (MiFuN 2017), 4. - 6. Oktober 2017, Duisburg. Duisburg, 2017
    Online Full Text
  • Hossain, Maruf; Ostermay, Ina; Weimann, Nils; Schmueckle, Franz Josef; Borngraeber, Johannes; Meliani, Chafik; Lisker, Marco; Tillack, Bernd; Krueger, Olaf; Krozer, Viktor; Heinrich, Wolfgang
    Performance study of a 248 GHz voltage controlled hetero-integrated source in InP-on-BiCMOS technology
    In: International Journal of Microwave and Wireless Technologies, Vol. 9, 2017, Nr. 2, pp. 259 – 268
    DOI
  • Arzi, Khaled; Keller, G.; Rennings, Andreas; Erni, Daniel; Tegude, Franz-Josef; Prost, Werner
    Frequency locking of a free running resonant tunneling diode oscillator by wireless sub-harmonic injection locking
    UCMMT 2017 - UK-Europe-China Workshop on Millimetre-Waves and Terahertz Technologies, 11.-13. September 2017, Liverpool, UK,
    Liverpool, 2017
    Online Full Text
  • Heedt, Sebastian; Traverso Ziani, Niccolò; Crépin, François; Prost, Werner; Trellenkamp, St.; Schubert, Jürgen; Grützmacher, Detlev A.; Trauzettel, Björn; Schäpers, Thomas
    Signatures of interaction-induced helical gaps in nanowire quantum point contacts
    In: Nature Physics, Vol. 13, 2017, Nr. 6, pp. 563 – 568
    DOI

    • 2016

  • Heedt, S.; Prost, Werner; Schubert, J.; Grützmacher, D.; Schäpers, Th.
    Ballistic Transport and Exchange Interaction in InAs Nanowire Quantum Point Contacts
    In: Nano Letters, Vol. 16, 2016, Nr. 5, pp. 3116 – 3123
    DOI
  • Schapers, Th.; Heedt, S.; Bringer, A.; Hardtdegen, H.; Schubert, J.; Grutzmacher, D.; Kammermeier, M.; Wenk, P.; Schliemann, J.; Prost, Werner
    Ballistic and spin transport in InAs nanowires
    In: Nanotechnology Materials and Devices Conference: conference proceedings / IEEE Nanotechnology Materials and Devices Conference, Toulouse, France, 2016, October 9th-12th. Piscataway: IEEE, 2016
    DOI
  • Benner, Oliver; Blumberg, Christian; Arzi, Khaled; Poloczek, Artur; Prost, Werner; Tegude, Franz-Josef
    Erratum: Electrical characterization and transport model of n-gallium nitride nanowires
    In: Applied Physics Letters (APL), Vol. 108, 2016, Nr. 4, pp. 082103
    DOI
  • Heedt, S.; Manolescu, A.; Nemnes, G.A.; Prost, Werner; Schubert, J.; Grützmacher, D.; Schäpers, Th.
    Adiabatic edge channel transport in a nanowire quantum point contact register
    In: Nano Letters, Vol. 16, 2016, Nr. 7, pp. 4569 – 4575
    DOI
  • Bitzer, Lucas A.; Speich, Claudia; Schäfer, David; Erni, Daniel; Prost, Werner; Tegude, Franz-Josef; Benson, Niels; Schmechel, Roland
    Modelling of electron beam induced nanowire attraction
    In: Journal of Applied Physics, Vol. 119, 2016, Nr. 14, pp. 145101
    DOI

    • 2015

  • Koester, Robert; Sager, Daniel; Quitsch, Wolf-Alexander; Pfingsten, Oliver; Poloczek, Artur; Blumenthal, Sarah; Keller, Gregor; Prost, Werner; Bacher, Gerd; Tegude, Franz-Josef
    High-Speed GaN/GaInN Nanowire Array Light-Emitting Diode on Silicon(111)
    In: Nano Letters, Vol. 15, 2015, Nr. 4, pp. 2318 – 2323
    DOI
  • Benner, Oliver; Blumberg, Christian; Arzi, Khaled; Poloczek, Artur; Prost, Werner; Tegude, Franz-Josef
    Electrical characterization and transport model of n-gallium nitride nanowires
    In: Applied Physics Letters (APL), Vol. 107, 2015, Nr. 8, pp. 082103
    DOI
  • Reuter, Ralf; van Waasen, Stefan; Peters, Dirk; Auer, Uwe; Brockerhoff, Wolfgang; Tegude, Franz-Josef
    A new temperature noise model of HFET with special emphasis on a gate-leakage current and investigation of the bias dependence of the equivalent noise sources
    In: 25th European Microwave Conference: Volume 1 / EuMC 1995; Bologna, Italy; 4 September 1995. Piscataway: IEEE, 2015, pp. 205 – 210
    DOI, Online Full Text
  • Paszuk, Agnieszka; Brückner, Sebastian; Steidl, Matthias; Zhao, Weihong; Dobrich, Anja; Supplie, Oliver; Kleinschmidt, Peter; Prost, Werner; Hannappel, Thomas
    Controlling the polarity of metalorganic vapor phase epitaxy-grown GaP on Si(111) for subsequent III-V nanowire growth
    In: Applied Physics Letters (APL), Vol. 106, 2015, Nr. 23, pp. 231601
    DOI
  • Peters, Dirk; Daumann, Walter; Brockerhoff, Wolfgang; Reuter, Ralf; Koenig, Eric T.; Tegude, Franz-Josef
    Direct calculation of the HBT small-signal equivalent circuit with special emphasize to the feedback capacitance
    In: 25th European Microwave Conference: Volume 2 / EuMC 1995; Bologna, Italy; 4 September 1995. Piscataway: IEEE, 2015, pp. 1032 – 1036
    DOI, Online Full Text

    • 2014

  • Ochedowski, Oliver; Marinov, Kolyo; Scheuschner, Nils; Poloczek, Artur; Kleine Bussmann, Benedict; Maultzsch, Janina; Schleberger, Marika
    Effect of contaminations and surface preparation on the work function of single layer MoS₂
    In: Beilstein Journal of Nanotechnology, Vol. 5, 2014, Nr. 1, pp. 291 – 297
    DOI (Open Access)
  • Braasch, Th.; David, G.; Hülsewede, R.; Auer, Uwe; Tegude, Franz-Josef; Jäger, Dieter
    Propagation of Microwaves in MMICs Studied by Time- and Frequency-Domain Electro-Optic Field Mapping
    In: Optical sensors: part of Advanced photonics ; 27 - 31 July 2014, Barcelona, Spain / Optics InfoBase, 27 - 31 July 2014, Barcelona. Washington: Optical Society of America (OSA), 2014, pp. 190 – 195
    DOI
  • Yacoub, Hady; Fahle, Dirk; Finken, Matthias; Hahn, Herwig; Blumberg, Christian; Prost, Werner; Kalisch, Holger; Heuken, Michael; Vescan, Andrei
    The effect of the inversion channel at the AlN/Si interface on the vertical breakdown characteristics of GaN-based devices
    In: Semiconductor Science and Technology, Vol. 29, 2014, Nr. 11, pp. 115012
    DOI

    • 2013

  • Steidl, M.; Korte, S.; Prost, Werner; Voigtländer, B.; Kleinschmidt, P.; Hannappel, T.
    Investigation of the doping profile of Zn-doped GaAs nanowires by a multitip STM
    European Workshop on MOVPE and Rel. Growth Techniques (EW MOVPE), Aachen, Germany, 02.06.2013 - 05.06.2013,
    Aachen, Germany, 2013
  • Benner, O.; Lysov, A.; Gutsche, C.; Keller, G.; Schmidt, C.; Prost, Werner; Tegude, Franz-Josef
    Junction field-effect transistor based on GaAs core-shell nanowires
    In: International Conference on Indium Phosphide and Related Materials (IPRM), 2013 / International Conference on Indium Phosphide and Related Materials (IPRM), 2013 : 19 - 23 May 2013, Kobe, Japan: IEEE, 2013
    DOI
  • Keller, Gregor; Tchegho, Anselme; Munstermann, Benjamin; Prost, Werner; Tegude, Franz-Josef; Suhara, Michihiko
    Characterization and modeling of zero bias RF-detection diodes based on triple barrier resonant tunneling structures
    In: International Conference on Indium Phosphide and Related Materials (IPRM), 2013 / International Conference on Indium Phosphide and Related Materials (IPRM), 2013 : 19 - 23 May 2013, Kobe, Japan. Piscataway: IEEE, 2013
    DOI
  • Fahle, M.; Blumberg, C.; Yacoub, H.; Prost, Werner; Kalisch, H.; Heuken, M.; Vescan, A.
    Effect of AIN layer thickness on wafer bowing and vertical breakdown voltage of GaN-on-Si
    European Workshop on MOVPE and Rel. Growth Techniques (EW MOVPE), Aachen, Germany, 02.06.2013 - 05.06.2013,
    Aachen, Germany, 2013
  • Korte, Stefan; Steidl, Matthias; Prost, Werner; Cherepanov, Vasily; Voigtländer, Bert; Zhao, Weihong; Kleinschmidt, Peter; Hannappel, Thomas
    Resistance and dopant profiling along freestanding GaAs nanowires
    In: Applied Physics Letters (APL), Vol. 103, 2013, Nr. 14, pp. 143104
    DOI
  • Tegude, Franz-Josef
    III-V-Semiconductor nanowires for the fabrication of optoelectronic and electronic devices
    In: 71st Annual Device Research Conference (DRC), 2013 / 71st Annual Device Research Conference (DRC), 2013 : 23 - 26 June 2013, The University of Notre Dame, Notre Dame. Piscataway: IEEE, 2013, pp. 11
    DOI
  • Keller, Gregor; Tchegho, Anselme; Münstermann, Benjamin; Prost, Werner; Tegude, Franz-Josef; Suhara, Michihiko
    Triple barrier resonant tunneling diodes for microwave signal generation and detection
    In: European Microwave Integrated Circuits Conference 2013 / EuMIC 2013; 6 - 8 Oct. 2013; Nuremberg, Germany. Piscataway: IEEE, 2013, pp. 228 – 231
    Online Full Text
  • Benson, Niels; Tegude, Franz-Josef
    Nano und Energie ≠ NanoEnergie : Anwendungen von Nanokonzepten in der Photovoltaik
    In: Unikate: Berichte aus Forschung und Lehre, 2013, Nr. 43: NanoEnergie : Materialentwicklung für eine nachhaltige Energieversorgung, pp. 76 – 87
    DOI, Online Full Text (Open Access)
  • Ochedowski, Oliver; Marinov, Kolyo; Wilbs, G.; Keller, Gregor; Scheuschner, Nils; Severin, Daniel; Bender, Markus; Maultzsch, Janina; Tegude, Franz-Josef; Schleberger, Marika
    Radiation hardness of graphene and MoS2 field effect devices against swift heavy ion irradiation
    In: Journal of Applied Physics, Vol. 113, 2013, Nr. 21, pp. 214306
    DOI (Open Access)
  • Sager, Daniel; Gutsche, Christoph; Prost, Werner; Tegude, Franz-Josef; Bacher, Gerd
    Recombination dynamics in single GaAs-nanowires with an axial heterojunction : N- versus p-doped areas
    In: Journal of Applied Physics, Vol. 113, 2013, Nr. 17, pp. 174303-1 – 174303-5
    DOI

    • 2012

  • Suhara, Michihiko; Takahagi, Satoshi; Asakawa, Kiyoto; Okazaki, Toshimichi; Nakamura, Masahito; Yamashita, Shin; Itagaki, Yosuke; Saito, Mitsufumi; Tchegho, Anselme; Keller, Gregor; Poloczek, Artur; Prost, Werner; Tegude, Franz-Josef
    Analysis of terahertz zero bias detectors by using a triple-barrier resonant tunneling diode integrated with a self-complementary bow-tie antenna
    In: 70th Annual Device Research Conference (DRC), 2012 / Annual Device Research Conference, 18 - 20 June 2012, The Pennsylvania State University, University Park, Pennsylvania. Piscataway, NJ: IEEE, 2012, pp. 77 – 78
    Online Full Text, DOI
  • Grange, Rachel; Brönstrup, Gerald; Kiometzis, Michael; Sergeyev, Anton; Richter, Jessica; Leiterer, Christian; Fritzsche, Wolfgang; Gutsche, Christoph; Lysov, Andrey; Prost, Werner; Tegude, Franz-Josef; Pertsch, Thomas; Tünnermann, Andreas; Christiansen, Silke
    Far-field imaging for direct visualization of light interferences in GaAs nanowires
    In: Nano Letters, Vol. 12, 2012, Nr. 10, pp. 5412 – 5417
    DOI
  • Sladek, Kamil; Winden, Andreas; Wirths, Stephan; Weis, Karl; Blömers, Christian; Gül, Önder; Grap, Thomas; Lenk, Steffi; von der Ahe, Martina; Weirich, Thomas E.; Hardtdegen, Hilde; Lepsa, Mihail Ion; Lysov, Andrey; Li, Zi-An; Prost, Werner; Tegude, Franz-Josef; Lüth, Hans; Schäpers, Thomas; Grützmacher, Detlev
    Comparison of InAs nanowire conductivity : Influence of growth method and structure
    In: Physica Status Solidi (C): Current Topics in Solid State Physics, Vol. 9, 2012, Nr. 2, pp. 230 – 234
    DOI
  • Tegude, Franz-Josef; Prost, Werner
    III-V Semiconductor Nanowire Transistors
    In: Advances in III-V Semiconductor Nanowires and Nanodevices / Wang, Deli; Li, Jianye (Eds.). Schardscha: Bentham Science Publishers, 2012, pp. 129 – 144
    DOI
  • Gutsche, Christoph; Niepelt, Raphael; Gnauck, Martin; Lysov, Andrey; Prost, Werner; Ronning, Carsten; Tegude, Franz-Josef
    Direct determination of minority carrier diffusion lengths at axial GaAs nanowire p-n junctions
    In: Nano Letters, Vol. 12, 2012, Nr. 3, pp. 1453 – 1458
    DOI
  • Grange, Rachel; Brönstrup, Gerald; Sergeyev, Anton; Richter, Jessica; Pertsch, Thomas; Tünnermann, Andreas; Christiansen, Silke; Leiterer, Christian; Fritzsche, Wolfgang; Gutsche, Christoph; Lysov, Andrey; Prost, Werner; Tegude, Franz-Josef
    Imaging of waveguiding and scattering interferences in individual GaAs nanowires via second-harmonic generation
    In: Nanophotonics IV / Andrews, David L.; Nanophotonics, 15 - 19 April 2012, Brussels, Belgium. Berlin: SPIE, 2012
    DOI
  • Gutsche, Christoph; Lysov, Andrey; Braam, Daniel; Regolin, Ingo; Keller, Gregor; Li, Zi-An; Geller, Martin Paul; Spasova, Marina; Prost, Werner; Tegude, Franz-Josef
    N-GaAs/InGaP/p-GaAs core-multishell nanowire diodes for efficient light-to-current conversion
    In: Advanced Functional Materials, Vol. 22, 2012, Nr. 5, pp. 929 – 936
    DOI
  • Münstermann, Benjamin; Tchegho, Anselme; Keller, Gregor; Tegude, Franz-Josef
    Optimized RTD-HBT VCO design based on large signal transient simulations
    In: International Conference on Indium Phosphide and Related Materials / IPRM 2012; Santa Barbara, United States; 27 - 30 August 2012. Piscataway: IEEE, 2012, pp. 32 – 35
    DOI, Online Full Text
  • Yoh, Kanji; Cui, Z.; Konishi, K.; Ohno, M.; Blekker, K.; Prost, Werner; Tegude, Franz-Josef; Harmand, J.-C.
    An InAs nanowire spin transistor with subthreshold slope of 20mV/dec
    In: 70th Annual Device Research Conference (DRC), 2012 / Annual Device Research Conference, 18 - 20 June 2012, The Pennsylvania State University, University Park, Pennsylvania. Piscataway, NJ: IEEE, 2012, pp. 79 – 80
    DOI, Online Full Text
  • Gutsche, Christof; Lysov, Andrey; Regolin, Ingo; Münstermann, Benjamin; Prost, Werner; Tegude, Franz-Josef
    Scalable electrical properties of axial GaAs nanowire pn-diodes
    In: Journal of Electronic Materials (JEM), Vol. 41, 2012, Nr. 5, pp. 809 – 812
    DOI
  • Blekker, Kai; Richter, Rene; Oda, Ryosuke; Taniyama, Satoshi; Benner, Oliver; Keller, Gregor; Munstermann, Benjamin; Lysov, Andrey; Regolin, Ingo; Waho, Takao
    InAs nanowire circuits fabricated by field-assisted self-assembly on a host substrate
    In: IEICE Transactions C: IEICE Transactions on Electronics, Vol. E95-C, 2012, Nr. 8, pp. 1369 – 1375
    DOI (Open Access)
  • Gutsche, Christoph; Regolin, Ingo; Lysov, Andrey; Blekker, Kai; Do, Quoc-Thai; Prost, Werner; Tegude, Franz-Josef
    III/V Nanowires for electronic and optoelectronic applications
    In: Nanoparticles from the gas phase: formation, structure, properties / Lorke, Axel (Eds.). Heidelberg: Springer, 2012, pp. 357 – 385
    DOI
  • Keller, Gregor; Tchegho, Anselme; Münstermann, Benjamin; Prost, Werner; Tegude, Franz-Josef
    Sensitive high frequency envelope detectors based on triple barrier resonant tunneling diodes
    In: International Conference on Indium Phosphide and Related Materials / IPRM 2012; Santa Barbara, United States; 27 - 30 August 2012. Piscataway: IEEE, 2012, pp. 36 – 39
    DOI, Online Full Text
  • Lysov, Andrey; Gutsche, Christoph; Prost, Werner; Tegude, Franz-Josef
    Single GaAs nanowire photovoltaic devices under very high power illumination
    In: International Conference on Indium Phosphide and Related Materials / IPRM 2012; Santa Barbara, United States; 27 - 30 August 2012. Piscataway: IEEE, 2012, pp. 253 – 256
    DOI, Online Full Text

    • 2011

  • Brönstrup, Gerald; Leiterer, Christian; Jahr, Norbert; Gutsche, Christoph; Lysov, Andrey; Regolin, Ingo; Prost, Werner; Tegude, Franz-Josef; Fritzsche, Wolfgang; Christiansen, Silke H.
    A precise optical determination of nanoscale diameters of semiconductor nanowires
    In: Nanotechnology, Vol. 22, 2011, Nr. 38, pp. 385201
    DOI
  • Ahl, Jan Philipp; Behmenburg, Hannes; Giesen, Christoph; Regolin, Ingo; Prost, Werner; Tegude, Franz-Josef; Radnoczi, György Zoltán; Pécz, Béla; Kalisch, Holger; Jansen, Rolf H.; Heuken, Michael
    Gold catalyst initiated growth of GaN nanowires by MOCVD
    In: Physica Status Solidi (C): Current Topics in Solid State Physics, Vol. 8, 2011, Nr. 7-8, pp. 2315 – 2317
    DOI
  • Li, Zi-An; Möller, Christina; Migunov, Vadim; Spasova, Marina; Farle, Michael; Lysov, Andrey; Gutsche, Christoph; Regolin, Ingo; Prost, Werner; Tegude, Franz-Josef; Ercius, Peter
    Planar-defect characteristics and cross-sections of 〈001〉, 〈111〉, and 〈112〉 InAs nanowires
    In: Journal of Applied Physics, Vol. 109, 2011, Nr. 11, pp. 114320
    DOI (Open Access)
  • Gutsche, Christoph; Lysov, Andrey; Regolin, Ingo; Brodt, A.; Liborius, Lisa; Frohleiks, Julia; Prost, Werner; Tegude, Franz-Josef
    Ohmic contacts to n-GaAs nanowires
    In: Journal of Applied Physics, Vol. 110, 2011, Nr. 1, pp. 014305
    DOI
  • Lysov, Andrey; Offer, Matthias; Gutsche, Christoph; Regolin, Ingo; Topaloglu, Serkan; Geller, Martin Paul; Prost, Werner; Tegude, Franz-Josef
    Optical properties of heavily doped GaAs nanowires and electroluminescent nanowire structures
    In: Nanotechnology, Vol. 22, 2011, Nr. 8, pp. 085702
    DOI
  • Lysov, Andrey; Vinaji, Sasa; Offer, Matthias; Gutsche, Christoph; Regolin, Ingo; Mertin, Wolfgang; Geller, Martin Paul; Prost, Werner; Bacher, Gerd; Tegude, Franz-Josef
    Spatially resolved photoelectric performance of axial GaAs nanowire pn-diodes
    In: Nano Research, Vol. 4, 2011, Nr. 10, pp. 987 – 995
    DOI
  • Topaloglu, Serkan; Prost, Werner; Tegude, Franz-Josef
    ICP-RIE etching of self-aligned InP based HBTs with Cl₂/N ₂ chemistry
    In: Microelectronic Engineering, Vol. 88, 2011, Nr. 7, pp. 1601 – 1605
    DOI
  • Regolin, Ingo; Gutsche, Christoph; Lysov, Andrey; Blekker, Kai; Li, Zi-An; Spasova, Marina; Prost, Werner; Tegude, Franz-Josef
    Axial pn-junctions formed by MOVPE using DEZn and TESn in vaporliquidsolid grown GaAs nanowires
    In: Journal of Crystal Growth, Vol. 315, 2011, Nr. 1, pp. 143 – 147
    DOI
  • Lysov, Andrey; Gutsche, Christoph; Offer, Matthias; Regolin, Ingo; Prost, Werner; Tegude, Franz-Josef
    The optoelectronic performance of axial and radial GaAs nanowire pn-diodes
    In: 23rd International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM 2011; May 22 - 26, 2011; Berlin, Germany. Piscataway: IEEE, 2011, pp. 276 – 278
    Online Full Text
  • Tchegho Kamgaing, A.; Münstermann, Björn; Geitmann, Ralf; Benner, Oliver; Blekker, Kai; Prost, Werner; Tegude, Franz-Josef
    High performance submicron RTD design for mm-wave oscillator applications
    In: 23rd International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM 2011; May 22 - 26, 2011; Berlin, Germany. Piscataway: IEEE, 2011, pp. 133 – 136
    Online Full Text
  • Lysov, Andrey; Gutsche, Christoph; Offer, Matthias; Regolin, Ingo; Prost, Werner; Tegude, Franz-Josef
    Spatially resolved photovoltaic performance of axial GaAs nanowire pn-diodes
    In: 2011 69th Annual Device Research Conference (DRC 2011) / Annual Device Research Conference, Santa Barbara, California, USA, 20 - 22 June 2011. Piscataway, NJ: IEEE, 2011, pp. 53 – 54
    DOI, Online Full Text
  • Gutsche, Christoph; Lysov, Andrey; Regolin, Ingo; Blekker, Kai; Prost, Werner; Tegude, Franz-Josef
    n-Type doping of vapor–liquid–solid grown GaAs nanowires
    In: Nanoscale Research Letters, Vol. 6, 2011, Nr. 1, pp. 65
    DOI (Open Access)

    • 2010

  • Münstermann, Benjamin; Blekker, Kai; Tchegho, Anselme; Brockerhoff, Wolfgang; Tegude, Franz-Josef
    Design of low-power RTD-based-VCOs for Ka-band application
    In: German Microwave Conference Digest of Papers / GeMiC 2010; Berlin, Germany; 15 - 17 March 2010. Piscataway: IEEE, 2010, pp. 39 – 42
    Online Full Text
  • Prost, Werner; Tegude, Franz-Josef
    Fabrication and RF performance of InAs Nanowire FET
    In: Device Research Conference (DRC), 2010 / Device Research Conference, 21 - 23 June 2010, The University of Notre Dame, Notre Dame, Indiana. Piscataway: IEEE, 2010, pp. 279 – 282
    DOI, Online Full Text
  • Tegude, Franz-Josef
    III-V-Nanowire FET
    Symposium on Opto- and Microelectronic Devices and Circuits 2010 (SODC), Berlin, Germany, 04.10.2010 - 07.10.2010,
    Berlin, Germany, 2010
  • Ronning, Carsten; Borschel, Christian; Geburt, Sebastian; Niepelt, Raphael; Müller, Sven; Stichtenoth, Daniel; Richters, Jan Peter; Dev, Apurba; Voss, Tobias; Chen, Limei; Heimbrodt, Wolfram; Gutsche, Christoph; Prost, Werner
    Tailoring the properties of semiconductor nanowires using ion beams
    In: Physica Status Solidi (B): Basic Solid State Physics, Vol. 247, 2010, Nr. 10, pp. 2329 – 2337
    DOI
  • Prost, Werner; Zhang, Dudu; Münstermann, Benjamin; Feldengut, Tobias; Geitmann, Ralf; Poloczek, Artur; Tegude, Franz-Josef
    InP-Based Unipolar Heterostructure Diode for Vertical Integration, Level Shifting, and Small Signal Rectification
    In: IEICE Transactions C: IEICE Transactions on Electronics, Vol. E93-C, 2010, Nr. 8, pp. 1309 – 1314
    DOI
  • Tchegho, A.; Muenstermann, B.; Gutsche, C.; Poloczek, Artur; Blekker, K.; Prost, Werner; Tegude, Franz-Josef
    Scalable high-current density RTDs with low series resistance
    In: International Conference on Indium Phosphide & Related Materials (IPRM), 2010: Conference Proceedings / International Conference on Indium Phosphide & Related Materials, May 31, 2010 - June 4, 2010, Takamatsu Symbol Tower, Kagawa, Japan. Piscataway: IEEE, 2010, pp. 358 – 361
    DOI, Online Full Text
  • Blekker, Kai; Münstermann, Benjamin; Matiss, Andreas; Do, Quoc-Thai; Regolin, Ingo; Brockerhoff, Wolfgang; Prost, Werner; Tegude, Franz-Josef
    High-Frequency Measurements on InAs Nanowire Field-Effect Transistors using Coplanar Waveguide Contacts
    In: IEEE Transactions on Nanotechnology, Vol. 9, 2010, Nr. 4, pp. 432 – 437
    DOI, Online Full Text

    • 2009

  • Poloczek, Artur; Münstermann, Benjamin; Nannen, Ingo; Regolin, Ingo; Tegude, Franz-Josef
    Wavelength-selective receiver for simultaneous λ=1.3 μm and λ=1.55 μm RF optical transmission
    In: International Conference on Indium Phosphide & Related Materials: Conference Proceedings / IPRM 2009; Newport Beach, United States; 10 - 14 May 2009. Piscataway: IEEE, 2009, pp. 295 – 297
    DOI, Online Full Text
  • Fedderwitz, Sascha; Stöhr, Andreas; Weiß, Mario; Poloczek, Artur; Rymanov, Vitaly; Patra, Ardhendu Sekhar; Jäger, Dieter; Tan, Kianhuan; Yoon, Soonfatt; Loke, Wan Khai; Wicaksono, Satrio A.; Ng, Tien Khee; Tangdiongga, Eduward
    1.3-μm GaNAsSb-GaAs UTC-photodetectors for 10-gigabit ethernet links
    In: IEEE Photonics Technology Letters, Vol. 21, 2009, Nr. 13, pp. 911 – 913
    DOI
  • Regolin, Ingo; Gutsche, C.; Lysov, A.; Prost, Werner; Malek, Margarethe; Vinaji, S.; Mertin, Wolfgang; Bacher, Gerd; Offer, Matthias; Lorke, Axel; Tegude, Franz-Josef
    Axial doping profile in VLS grown GaAs:Zn nanowires
    13th European Workshop on Metalorganic Vapor Phase Epitaxy, 7. – 10. Juni 2009, Ulm, Germany,
    2009
  • Vinaji, Sasa; Lochthofen, André; Mertin, Wolfgang; Regolin, Ingo; Gutsche, Christoph; Prost, Werner; Tegude, Franz-Josef; Bacher, Gerd
    Material and doping transitions in single GaAs-based nanowires probed by Kelvin probe force microscopy
    In: Nanotechnology, Vol. 20, 2009, Nr. 38, pp. 385702
    DOI
  • Borschel, Christian; Niepelt, Raphael; Geburt, Sebastian; Gutsche, Christoph; Regolin, Ingo; Prost, Werner; Tegude, Franz-Josef; Stichtenoth, Daniel; Schwen, Daniel; Ronning, Carsten
    Alignment of semiconductor nanowires using ion beams
    In: Small, Vol. 5, 2009, Nr. 22, pp. 2576 – 2580
    DOI
  • Gutsche, Christoph; Regolin, Ingo; Blekker, Kai; Lysov, Andrey; Prost, Werner; Tegude, Franz-Josef
    Controllable p -type doping of GaAs nanowires during vapor-liquid-solid growth
    In: Journal of Applied Physics, Vol. 105, 2009, Nr. 2, pp. 024305
    DOI
  • Tan, Kian Huan; Yoon, Soon F.; Fedderwitz, Sascha; Stöhr, Andreas; Loke, Wan Khai; Wicaksono, Satrio; Ng, Tien Khee; Weiß, Mario; Poloczek, Artur; Rymanov, Vitaly; Patra, Ardhendu; Tangdiongga, Eduward; Jäger, Dieter
    14-GHz GaNAsSb unitraveling-carrier 1.3-μm photodetectors grown by RF plasma-assisted nitrogen molecular beam epitaxy
    In: IEEE Electron Device Letters, Vol. 30, 2009, Nr. 6, pp. 590 – 592
    DOI, Online Full Text

    • 2008

  • Münstermann, Benjamin; Matiss, Andreas; Brockerhoff, Wolfgang; Tegude, Franz-Josef
    Large-signal performance of resonant tunnelling diodes in K-Band oscillators
    In: Proceedings of the 38th European Microwave Conference / EuMC 2008; Amsterdam, Netherlands; 27 - 31 October 2008. Piscataway: IEEE, 2008, pp. 1469 – 1472
    DOI, Online Full Text
  • Jin, Zhi; Liu, Xinyu; Prost, Werner; Tegude, Franz-Josef
    Surface-recombination-free InGaAs/InP HBTs and the base contact recombination
    In: Solid State Electronics, Vol. 52, 2008, Nr. 7, pp. 1088 – 1091
    DOI
  • Blekker, Kai; Do, Quoc Thai; Matiss, Andreas; Prost, Werner; Tegude, Franz-Josef
    High frequency characterisation of single inas nanowire field-effect transistors
    In: 20th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM 2008; Versailles, France; 25 - 29 May 2008. Piscataway: IEEE, 2008, pp. 4703003
    DOI, Online Full Text
  • Stichtenoth, Daniel; Wegener, Katharina; Gutsche, Christoph; Regolin, Ingo; Tegude, Franz-Josef; Prost, Werner; Seibt, Michael; Ronning, Carsten
    P -type doping of GaAs nanowires
    In: Applied Physics Letters (APL), Vol. 92, 2008, Nr. 16, pp. 163107
    DOI
  • Matiss, Andreas; Poloczek, Artur; Brockerhoff, Wolfgang; Prost, Werner; Tegude, Franz-Josef
    Monostable-bistable threshold logic elements in a fully complementary optical receiver circuit for high frequency applications
    In: 20th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM 2008; Versailles, France; 25 - 29 May 2008. Piscataway: IEEE, 2008, pp. 4702921
    DOI, Online Full Text

    • 2007

  • Regolin, Ingo; Sudfeld, Daniela; Lüttjohann, Stephan; Khorenko, Victor; Prost, Werner; Kästner, Jochen; Dumpich, Guenter; Meier, Cedrik; Lorke, Axel; Tegude, Franz-Josef
    Growth and characterisation of GaAs/InGaAs/GaAs nanowhiskers on (1 1 1) GaAs
    In: Journal of Crystal Growth, Vol. 298, 2007, pp. 607 – 611
    DOI
  • Waho, Takao; Yamada, A.; Okuyama, Hiroki; Khorenko, Victor; Do, T.; Prost, Werner
    A four-resonant-tunneling-diode (4RTD) NAND/NOR logic gate
    In: Proceedings of the IEEE International Symposium on Circuits and Systems / ISCAS 2007; New Orleans, United States; 27 - 30 May 2007. Piscataway: IEEE, 2007, pp. 129 – 132
    DOI, Online Full Text
  • Regolin, Ingo; Khorenko, Victor; Prost, Werner; Tegude, Franz-Josef; Sudfeld, Daniela; Kästner, Jochen; Dumpich, Günter; Hitzbleck, Klemens; Wiggers, Hartmut
    GaAs whiskers grown by metal-organic vapor-phase epitaxy using Fe nanoparticles
    In: Journal of Applied Physics, Vol. 101, 2007, Nr. 5, pp. 054318
    DOI
  • Tan, Kian Huan; Yoon, Soon Fatt; Loke, Wan Khai; Wicaksono, Satrio; Lew, Kim Luong; Stöhr, Andreas; Ecin, Okan; Poloczek, Artur; Malcoci, Andrei; Jäger, Dieter
    High-speed picosecond pulse response GaNAsSb p-i-n photodetectors grown by rf plasma-assisted nitrogen molecular beam epitaxy
    Microwave Optical Week (MOW), ISIS-IPHOBAC Workshop, 16-18 May 2007, Budapest, Hungary,
    In: Applied Physics Letters (APL), Vol. 90, 2007, Nr. 18, pp. 183515
    DOI
  • Nannen, Ingo; Poloczek, Artur; Matiss, Andreas; Brockerhoff, Wolfgang; Regolin, Ingo; Tegude, Franz-Josef
    INP-hemt-tia with differential optical input using vertical high topology pin-diodes
    In: 19th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM '07; 14 - 18 May 2007; Matsue, Japan. Piscataway: IEEE Service Center, 2007, pp. 107 – 109
    DOI, Online Full Text
  • Poloczek, Artur; Weiß, Mario; Fedderwitz, Sascha; Stöhr, Andreas; Prost, Werner; Jäger, Dieter; Tegude, Franz-Josef
    Integrated InGaAs pin-diode on exactly oriented silicon (001) substrate suitable for 10 Gbit/s digital applications
    In: 20th Annual Meeting of the IEEE Lasers and Electro-Optics Society: Conference Proceedings / LEOS; Lake Buena Vista, United States; 21 - 25 October 2007. Piscataway: IEEE, 2007, pp. 180 – 181
    DOI
  • Matiss, Andreas; Poloczek, Artur; Brockerhoff, Wolfgang; Prost, Werner; Tegude, Franz-Josef
    Large-signal analysis and ac modelling of sub-micron resonant tunnelling diodes
    In: 2nd European Microwave Integrated Circuits Conference: Conference Proceedings / EuMIC 2007; Munich, Germany; 8 - 12 October 2007. Piscataway: IEEE, 2007, pp. 207 – 210
    DOI, Online Full Text
  • Prost, Werner; Khorenko, Victor; Mofor, Augustine Che; Neumann, Stefan; Poloczek, Artur; Matiss, Andreas; Bakin, Andrey; Schlachetzki, Andreas; Tegude, Franz-Josef
    High performance III/V RTD and PIN diode on a silicon (001) substrate
    In: Applied Physics A: Materials Science and Processing, Vol. 87, 2007, Nr. 3, pp. 539 – 544
    DOI
  • Do, Quoc Thai; Blekker, Kai; Regolin, Ingo; Prost, Werner; Tegude, Franz-Josef
    High transconductance MISFET with a single InAs nanowire channel
    In: IEEE Electron Device Letters, Vol. 28, 2007, Nr. 8, pp. 682 – 684
    DOI, Online Full Text
  • Prost, Werner; Poloczek, A.; Matiss, A.; Driesen, J.; Tegude, Franz-Josef
    High-Speed Monostable-Bistable Transition Logic Element Gates with Optical Inputs at 1.3µm/1.55µm
    XXII Conference on Design of Circuits and Integrated Systems 2007 (DCIS); Sevilla, Spain; 21.11.2007 - 23.11.2007,
    Sevilla, Spain, 2007
  • Damodaran, Sriraman; Vadivelmurugan, Selvakumaran; Do, Quoc Thai; Heitzinger, Clemens; Liu, Yang; Klimeck, Gerhard
    Investigation of silicon nanowire biosensors using the 2D drift-diffusion model
    In: NSTI Nanotechnology Conference and Trade Show: Technical Proceedings / NSTI Nanotech 2007; Santa Clara, United States; 20 - 24 May 2007. Boston: Nano Science and Technology Institute, Vol. 2, 2007, pp. 542 – 544
  • Do, Quoc Thai; Blekker, Kai; Regolin, Ingo; Prost, Werner; Tegude, Franz-Josef
    Single n-InAs nanowire MIS-field-effect transistor : Experimental and simulation results
    In: 19th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM '07; 14 - 18 May 2007; Matsue, Japan. Piscataway: IEEE Service Center, 2007, pp. 392 – 395
    DOI, Online Full Text
  • Prost, Werner; Blekker, Kai; Do, Quoc-Thai; Regolin, Ingo; Müller, Sven; Stichtenoth, Daniel; Wegener, Katharina; Ronning, Carsten; Tegude, Franz-Josef
    Modeling the carrier mobility in nanowire channel fet
    In: Low-Dimensional Materials: Synthesis, Assembly, Property Scaling and Modeling / MRS Spring Meeting 2007; San Francisco, United States; 9 - 13 April 2007. Red Hook: Materials Research Society, 2007, pp. 139 – 144
    DOI
  • Alkeev, Nikolay V.; Averin, Stanislav V.; Dorofeev, Aleksey A.; Velling, Peter; Khorenko, E.; Prost, Werner; Tegude, Franz-Josef
    Sequential mechanism of electron transport in the resonant tunneling diode with thick barriers
    In: Semiconductors, Vol. 41, 2007, Nr. 2, pp. 227 – 231
    DOI
  • Matiss, Andreas; Poloczek, Artur; Stöhr, Andreas; Brockerhoff, Wolfgang; Prost, Werner; Tegude, Franz-Josef
    Sub-nanosecond pulse generation using resonant tunneling diodes for impulse radio
    In: IEEE International Conference on Ultra-Wideband 2007 / ICUWB; 24 - 27 September 2007; Singapore. Piscataway: IEEE Computer Society, 2007, pp. 354 – 359
    DOI, Online Full Text

    • 2006

  • Krämer, Stefan; Neumann, Stefan; Prost, Werner; Tegude, Franz-Josef; Malzer, Stefan; Döhler, Gottfried H.
    A monolithically integrated intensity-independent polarization-sensitive switch operating at 1.3 μm based on ordering in InGaAsP
    In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 32, 2006, Nr. 1-2, pp. 554 – 557
    DOI
  • Do, Quoc Thai; Regolin, Ingo; Khorenko, Victor; Prost, Werner; Tegude, Franz-Josef
    Fabrication and electrical characterisation of n-InAs single nanowhisker field-effect transistors
    In: International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM 2006; Princeton; United States; 8 -11 May 2006. Piscataway: IEEE Operations Center, 2006, pp. 436 – 438
    DOI, Online Full Text
  • Poloczek, Artur; Wang, Wei; Driesen, Jörn; Regolin, Ingo; Prost, Werner; Tegude, Franz-Josef
    Concept and Development of a New Mobile-Gate with All Optical Input
    In: German Microwave Conference / GeMic`06; Karslruhe, Germany; 28.03.2006 - 30.03.2006, 2006
    Online Full Text
  • Regolin, Ingo; Khorenko, Victor; Prost, Werner; Tegude, Franz-Josef; Sudfeld, Daniela; Kästner, Jochen; Dumpich, Guenter
    Composition control in metal-organic vapor-phase epitaxy grown InGaAs nanowhiskers
    In: Journal of Applied Physics, Vol. 100, 2006, Nr. 7, pp. 074321
    DOI
  • Noé, Reinhold; Rückert, Ulrich; Achiam, Yakoov; Tegude, Franz-Josef; Porte, Henri
    European "synQPSK" project : Toward synchronous optical quadrature phase shift keying with DFB lasers
    In: Coherent Optical Technologies and Applications / COTA 2006; Whistler, Canada; 25–30 June 2006. Washington: Optical Society of America (OSA), 2006, pp. CThC4
    DOI (Open Access)
  • Matiss, Andreas; Prost, Werner; Tegude, Franz-Josef
    Optoelectronic 1:2 demultiplexing based on resonant tunnelling diodes and pin-photodetectors
    In: Electronics Letters, Vol. 42, 2006, Nr. 10, pp. 599 – 600
    DOI
  • Regolin, Ingo; Khorenko, Victor; Prost, Werner; Tegude, Franz-Josef; Sudfeld, Daniela; Kästner, Jochen; Dumpich, Günter
    Composition Control in MOVPE-Grown InGaAs Nanowhiskers.
    In: Journal of Applied Physics, Vol. 298, 2006, pp. 607 – 611
  • Kollonitsch, Z.; Schimper, Hermann Josef; Seidel, Ulf; Möller, Kristof; Neumann, Stefan; Tegude, Franz-Josef; Willig, Frank; Hannappel, Thomas
    Improved structure and performance of the GaAsSb/InP interface in a resonant tunneling diode
    In: Journal of Crystal Growth, Vol. 287, 2006, Nr. 2, pp. 536 – 540
    DOI
  • Jin, Zhi; Uchida, Kazuo; Nozaki, Shinji; Prost, Werner; Tegude, Franz-Josef
    Passivation of InP-based HBTs
    In: Applied Surface Science, Vol. 252, 2006, Nr. 21, pp. 7664 – 7670
    DOI
  • Topaloǧlu, Serkan; Driesen, Jörn; Prost, Werner; Tegude, Franz-Josef
    The effect of collector doping on InP-based double heterojunction bipolar transistors
    4th International Conference on Electrical and Electronics Engineering (ELECO), Bursa, Turkey, 07.12.2005 - 11.12.2005,
    In: Turkish Journal of Electrical Engineering & Computer Sciences, Vol. 14, 2006, Nr. 3, pp. 429 – 436
    (Open Access)
  • Noé, Reinhold; Pfau, Timo; Achiam, Yakoov; Tegude, Franz-Josef; Porte, Henri
    Integrated components for optical QPSK transmission
    In: Frontiers in Optics 2006 / FiO 2006; Rochester, United States; 10 October 2006. Washington: Optical Society of America (OSA), 2006, pp. FMD4
    DOI
  • Sudfeld, Daniela; Regolin, Ingo; Kästner, Jochen; Dumpich, Guenter; Khorenko, Victor; Prost, Werner; Tegude, Franz-Josef
    Single InGaAs nanowhiskers characterized by analytical transmission electron microscopy
    In: Phase Transitions, Vol. 79, 2006, Nr. 9-10, pp. 727 – 737
    DOI
  • Matiss, Andreas; Brockerhoff, Wolfgang; Poloczek, Artur; Prost, Werner; Tegude, Franz-Josef
    Low-temperature DC and RF measurement and modelling of InGaAs-InAlAs resonant tunneling diodes down to 15 K
    In: Proceedings of the 1st European Microwave Integrated Circuits Conference / EuMIC 2006; Manchester; United Kingdom; 10 - 13 September 2006. Piscataway: IEEE Computer Society, 2006, pp. 344 – 347
    DOI, Online Full Text

    • 2005

  • Müller, Thorsten; Lorke, Axel; Do, Quoc Thai; Tegude, Franz-Josef; Schuh, Dieter; Wegscheider, Werner
    A three-terminal planar selfgating device for nanoelectronic applications
    In: Solid State Electronics, Vol. 49, 2005, Nr. 12, pp. 1990 – 1995
    DOI
  • Khorenko, Victor; Regolin, Ingo; Neumann, Stefan; Do, Quoc Thai; Prost, Werner; Tegude, Franz-Josef
    Characterisation of GaAs nanowhiskers grown on GaAs and Si substrates
    In: 17th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM 2005; Glasgow, Scotland; 8 - 12 May 2005. Piscataway: IEEE, 2005, pp. 363 – 366
    DOI, Online Full Text
  • Prost, Werner; Kelly, Peter M.; Guttzeit, Andreas; Khorenko, Victor; Khorenko, E.; Matiss, Andreas; Driesen, Jörn; Mofor, Augustine Che; Bakin, Andrey; Poloczek, Artur; Neumann, Stefan; Stöhr, Andreas; Jäger, Dieter; Mc Ginnity, M.; Schlachetzki, Andreas; Tegude, Franz-Josef
    Design and modelling of A III/V mobile-gate with optical input on a silicon substrate
    In: Conference Proceedings - International Conference on Indium Phosphide and Related Materials / IPRM 2005; Glasgow, Scotland; 8 - 12 May 2005. Piscataway: IEEE, 2005, pp. 17 – 20
    DOI, Online Full Text
  • Krämer, Stefan; Neumann, Stefan; Prost, Werner; Tegude, Franz-Josef; Malzer, Stefan; Döhler, Gottfried H.
    Determination of piezo-electric fields in spontaneously ordered InGaAsP
    In: 27th International Conference on the Physics of Semiconductors / ICPS-27, Flagstaff, Arizona, 26 - 30 July 2004. College Park: American Institute of Physics (AIP), 2005, pp. 119 – 120
    DOI
  • Prost, Werner; Khorenko, V.; Kelly, P.; Mofor, A.-C.; Neumann, S.; Poloczek, Artur; Brennenmann, A.; Matiss, A.; Bakin, A.; Stöhr, Andreas; Jäger, Dieter; Ginnity, M. Mc; Schlachetzki, A.; Tegude, Franz-Josef
    High Performance III/V RTD and PIN Diodes on a silicon substrate
    6th Topical Workshop on Heterostructure Microelectronics, TWHM Awaji Island, Hyogo, Japan, Aug. 22-25, 2005,
    Awaji Island, Hyogo, 2005
  • Prost, Werner; Khorenko, Victor; Mofor, Augustine Che; Bakin, Andrey; Khorenko, E.; Ehrich, Silja; Wehmann, Hergo Heinrich; Schlachetzki, Andreas; Tegude, Franz-Josef
    High-speed InP-based resonant tunnelling diode on silicon substrate
    In: Proceedings of the 35th European Solid-State Device Research Conference / ESSDERC 2005; Grenoble; France; 12 - 16 September 2005. Piscataway: IEEE Operations Center, 2005, pp. 257 – 260
    DOI, Online Full Text
  • Driesen, Jörn; Topaloglu, Serkan; Tegude, Franz-Josef
    Optimizing lateral HBT design by utilizing performance estimations
    In: 17th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM 2005; Glasgow, Scotland; 8 - 12 May 2005. Piscataway: IEEE, 2005, pp. 441 – 444
    DOI, Online Full Text
  • Krämer, Stefan; Neumann, Stefan; Prost, Werner; Tegude, Franz-Josef; Malzer, Stefan; Döhler, Gottfried H.
    Polarisation-sensitive switch : An integrated intensity-independent solution for 1.3 μm based on the polarisation anisotropy of ordered InGaAsP
    In: Physica Status Solidi (A): Applications and Materials Science, Vol. 202, 2005, Nr. 6, pp. 992 – 996
    DOI
  • Topaloglu, Serkan; Driesen, Jörn; Poloczek, Artur; Tegude, Franz-Josef
    Fabrication of transferred-substrate HBT with simple technology
    In: 17th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM 2005; Glasgow, Scotland; 8 - 12 May 2005. Piscataway: IEEE, 2005, pp. 508 – 511
    DOI, Online Full Text
  • Jin, Zhi; Neumann, Stefan; Prost, Werner; Tegude, Franz-Josef
    Passivation of InP/GaAsSb/InP double heterostructure bipolar transistors with ultra thin base layer by low-temperature deposited SiNₓ
    In: Solid State Electronics, Vol. 49, 2005, Nr. 3, pp. 409 – 412
    DOI
  • Matiss, A.; Driesen, J.; Ehrich, S.; Prost, Werner; Tegude, Franz-Josef
    Bias Dependent Boolean Multivalue Logic Application of Resonant Tunneling Bipolar Transistors
    In: Proceedings of the German Microwave Conference / GeMic 2005, Ulm, Germany, 05.04.2005 - 07.04.2005, 2005, pp. 156 – 159
    Online Full Text

    • 2004

  • Jin, Zhi; Prost, Werner; Neumann, Stefan; Tegude, Franz-Josef
    Comparison of the passivation effects on self- and non-self-aligned InP/InGaAs/InP double heterostructure bipolar transistors by low-temperature deposited SiNₓ
    In: Journal of Applied Physics, Vol. 96, 2004, Nr. 1, pp. 777 – 783
    DOI
  • Ehrich, Silja; Driesen, Jörn; Neumann, Stefan; Topaloglu, Serkan; Brockerhoff, Wolfgang; Tegude, Franz-Josef
    Investigation of the rf-noise behaviour of InP based DHBT with InGaAs base and GaAsSb base
    In: Noise in Devices and Circuits II / Noise in Devices and Cirquits II, 26 - 28 May 2004, Maspalomas, Spain / Danneville, Francois; Bonani, Fabrizio; Deen, M. Jamal; Levinshtein, Michael E. (Eds.). Bellingham: SPIE, 2004, pp. 164 – 172
    DOI
  • Neumann, Stefan; Velling, Peter; Prost, Werner; Tegude, Franz-Josef
    Growth and characterization of InAlP/InGaAs double barrier RTDs
    12th International Conference on Metalorganic Vapour Phase Epitaxy (MOVPE), Lahaina, Hawaii, USA, 30.05.2004 - 04.06.2004,
    In: Journal of Crystal Growth, Vol. 272, 2004, Nr. 1-4, pp. 555 – 558
    DOI
  • Matiss, A.; Janßen, Guido; Bertenburg, Ralf M.; Brockerhoff, Wolfgang; Tegude, Franz-Josef
    Optical Sensitivity of a Monolithic Integrated InP PIN-HEMT-HBT Transimpedance Amplifier
    European Microwave Workshops and Chort Courses, EuMW`04; Amsterdam, The Netherlands; 11.10.2004 - 15.10.2004,
    Amsterdam, The Netherlands, 2004
  • Khorenko, Victor; Regolin, Ingo; Neumann, Stefan; Prost, Werner; Tegude, Franz-Josef; Wiggers, Hartmut
    Photoluminescence of GaAs nanowhiskers grown on Si substrate
    In: Applied Physics Letters (APL), Vol. 85, 2004, Nr. 26, pp. 6407 – 6408
    DOI
  • Prost, Werner
    Beiträge der Nanotechnologie zur Errhöhung der Funktionalität und Dichte in der Elektronik
    In: Workshop "Kontrollierte Selbstorganisation für zukünftige technische Anwendungen" / Düsseldorf, Germany; 16.06.2003 - 17.06.2003, 2004, pp. 34 – 40
  • Khorenko, E.; Prost, Werner; Tegude, Franz-Josef; Stoffel, Mathieu; Duschl, R.; Dashiell, Michael W.; Schmidt, O.G.; Klimeck, Gerhard
    Manufacturability and electrical characteristics of Si/SiGe interband tunnelling diodes
    In: 5th International Conference on Semiconductor Devices and Microsystmes: Conference Proceedings / ASDAM 2004; Slomenice, Slovakia; 17 - 21 October 2004. Piscataway: IEEE Operations Center, 2004, pp. 29 – 32
    Online Full Text, DOI
  • Khorenko, E.; Prost, Werner; Tegude, Franz-Josef; Stoffel, Mathieu; Duschl, R.; Dashiell, Michael W.; Schmidt, O.G.
    Influence of layer structure on the current-voltage characteristics of Si/SiGe interband tunneling diodes
    In: Journal of Applied Physics, Vol. 96, 2004, Nr. 7, pp. 3848 – 3851
    DOI
  • Neumann, Stefan; Topaloglu, S.; Driesen, J.; Jin, Z.; Prost, Werner; Tegude, Franz-Josef
    Study of ohmic contacts and interface layers of carbon doped GaAsSb/InP heterostructures for DHBT application
    12th International Conference on Metalorganic Vapour Phase Epitaxy (MOVPE), Lahaina, Hawaii, USA, 30.05.2004 - 04.06.2004,
    Lahaina, USA, 2004
  • Jin, Zhi; Otten, Frank; Reimann, Thorsten; Neumann, Stefan; Prost, Werner; Tegude, Franz-Josef
    Current gain increase by SiNₓ passivation in self-aligned InGaAs/InP heterostructure bipolar transistor with compositionally graded base
    In: Solid State Electronics, Vol. 48, 2004, Nr. 9, pp. 1637 – 1641
    DOI
  • Alkeev, Nikolay V.; Lyubchenko, Vladimir E.; Velling, Peter; Khorenko, E.; Prost, Werner; Tegude, Franz-Josef
    Equivalent circuit of a resonant tunnel InGaAs/InAlAs diode operating at millimetric waves
    In: Journal of Communications Technology and Electronics, Vol. 49, 2004, Nr. 7, pp. 833 – 838
  • Do, Quoc Thai; Katzer, Klaus Dieter; Martinez-Albertos, José Luis; Khorenko, Victor; Mertin, Wolfgang; Prost, Werner; Moore, Barry D.; Tegude, Franz-Josef
    A nanoparticle-coated nanocrystal-gate for an INP-based heterostructure field-effect transistor
    In: 16th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM`04; Kagoshima, Japan; 31 May - 4 June 2004. Piscataway: IEEE, 2004, pp. 435 – 438
    DOI, Online Full Text
  • Jin, Zhi; Prost, Werner; Neumann, Stefan; Tegude, Franz-Josef
    Current transport mechanisms and their effects on the performances of InP-based double heterojunction bipolar transistors with different base structures
    In: Applied Physics Letters (APL), Vol. 84, 2004, Nr. 15, pp. 2910 – 2912
    DOI
  • Khorenko, Victor; Mofor, Augustine Che; Bakin, Andrey; Neumann, Stefan; Guttzeit, Andreas; Wehmann, Hergo Heinrich; Prost, Werner; Schlachetzki, Andreas; Tegude, Franz-Josef
    Buffer optimization for InP-on-si (001) quasi-substrates
    In: 16th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM`04; Kagoshima, Japan; 31 May - 4 June 2004. Piscataway: IEEE, 2004, pp. 118 – 121
    DOI, Online Full Text
  • Prost, Werner; Tegude, Franz-Josef
    Disziplin im Nano-Maßstab : Selbstorganisation in Bottom-up-Prozessen
    In: Forum Forschung: Das Forschungsmagazin der Universität Duisburg-Essen, 2004, Nr. 2003/2004, pp. 88 – 92
    Online Full Text
  • Jin, Zhi; Neumann, Stefan; Prost, Werner; Tegude, Franz-Josef
    Effects of (NH₄)₂S passivation on the performance of graded-base InGaAs/InP HBTs
    In: Physica Status Solidi (A): Applications and Materials Science, Vol. 201, 2004, Nr. 5, pp. 1017 – 1021
    DOI
  • Schulze-Kraasch, Folkert; Velling, Peter; Prost, Werner
    Characterisation of ultra-thin III/V-heterostructures by convergent-beam-electron- and high-resolution-X-ray-diffraction
    In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 110, 2004, Nr. 2, pp. 161 – 167
    DOI
  • Alkeev, Nikolay V.; Velling, Peter; Khorenko, E.; Prost, Werner; Tegude, Franz-Josef
    Resonant tunneling diode immedunce dependence analysis
    In: Fifth International Kharkov Symposium on Physics and Engineering of Microwaves, Millimeter, and Submillimeter Waves: Symposium Proceedings / MSMW'04; Kharkov, Ukraine; 21 - 26 June 2004 / Kostenko, A.; Nosich, A.I.; Yakovenko, V.F. (Eds.). Piscataway: IEEE, Vol. 2, 2004, pp. 566 – 568
    Online Full Text
  • Khorenko, E.; Ehrich, S.; Prost, Werner; Tegude, Franz-Josef
    Tunneling Diodes for Compact High Speed Circuits
    3rd Joint Symposium on Opto- and Microelectronic Devices and Circuits (SODC), Wuhan, China, 21.05.2004 - 30.05.2004,
    Wuhan, China, 2004
  • Jin, Zhi; Neumann, Stefan; Prost, Werner; Tegude, Franz-Josef
    Effects of (NH4)(2)S passivation on the performance of graded-base InGaAs/InP HBTs
    In: Physica status solidi A - Applied research, Vol. 201, 2004, Nr. 5, pp. 1017 – 1021
  • Jin, Zhi; Neumann, Stefan; Prost, Werner; Tegude, Franz-Josef
    Surface recombination mechanism in graded-base InGaAs-InP HBTs
    In: IEEE Transactions on Electron Devices (T-ED), Vol. 51, 2004, Nr. 6, pp. 1044 – 1045
    DOI, Online Full Text
  • Jin, Zhi; Prost, Werner; Neumann, Stefan; Tegude, Franz-Josef
    Sulfur and low-temperature SiNₓ passivation of self-aligned graded-base InGaAs/InP heterostructure bipolar transistors
    In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 22, 2004, Nr. 3, pp. 1060 – 1066
    DOI (Open Access)

    • 2003

  • Ehrich, Silja; Bertenburg, Ralf M.; Agethen, Michael; Brennemann, Andreas; Brockerhoff, Wolfgang; Tegude, Franz-Josef
    A consistent and scalable PSPICE HFET-model for DC- and S-parameter-simulation
    In: IEEE International Conference on Microelectronic Test Structures / ICMTS 2002; Cork, Ireland; 8 - 11 April 2002. Piscataway: IEEE, 2003, pp. 67 – 70
    DOI, Online Full Text
  • Jin, Z.; Neumann, Stefan; Prost, Werner; Tegude, Franz-Josef
    Mechanism of Current Gain increase of Heterostructure Bipolar Transistors Passivated by Low-Temperature Deposited SiNx
    In: Proceedings of the 11th European GAAS and Related III-V Compounds Application Symposium / GAAS`03; München, Germany; 06.10.2003 - 10.10.2003, 2003, pp. 259 – 262
    DOI
  • Glösekötter, Peter; Pacha, Christian; Goser, Karl F.; Prost, Werner; Kim, Samuel O.; van Husen, Holger; Reimann, Thorsten; Tegude, Franz-Josef
    Circuit and application aspects of tunnelling devices in a MOBILE configuration
    In: International Journal of Circuit Theory and Applications, Vol. 31, 2003, Nr. 1, pp. 83 – 103
    DOI
  • Neumann, Stefan; Prost, Werner; Tegude, Franz-Josef
    Growth of highly p-type doped GaAsSb : C for HBT application
    In: International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM`03; Santa Barbara, USA; 12.05.2003 - 16.05.2003. Piscataway: IEEE, 2003, pp. 575 – 578
    DOI, Online Full Text
  • Neumann, Stefan; Prost, Werner; Tegude, Franz-Josef
    InP based double heterojunction bipolar transistor with carbon doped GaAsSb : C base grown by LP-MOVPE
    In: Proceedings of the 11th European GAAS and Related III-V Compounds Application Symposium / GAAS`03; München, Germany; 06.10.2003 - 10.10.2003, 2003, pp. 255 – 257
    Online Full Text
  • Ehrich, Silja; Agethen, Michael; Brockerhoff, Wolfgang; Tegude, Franz-Josef
    RF- and Noise Modeling of Semiconductor Devices based on InP
    ITG Fachtagung 2003,
    2003
  • Jin, Zhi; Otten, F.; Neumann, Stefan; Reimann, Thorsten; Prost, Werner; Tegude, Franz-Josef
    Passivation of graded-base InP/InGaAs/InP double heterostructure bipolar transistors by room-temperature deposited SiNₓ
    In: International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM`03; Santa Barbara, USA; 12.05.2003 - 16.05.2003. Piscataway: IEEE, 2003, pp. 156 – 159
    DOI, Online Full Text
  • Prost, Werner; Neumann, Stefan; Velling, Peter; Tegude, Franz-Josef
    LP-MOVPE growth for high-speed electronic devices on InP
    10th European Workshop on MOVPE and Rel. Growth Techniques (EW MOVPE), Leece, Italy, 08.06.2003 - 11.06.2003,
    Leece, Italy, 2003
  • Neumann, Stefan; Spieler, Jochen; Blache, R.; Kiesel, Peter; Prost, Werner; Döhler, Gottfried H.; Tegude, Franz-Josef
    MOVPE growth and polarisation dependence of (dis-)ordered InGaAsP PIN diodes for optical fibre applications
    Eleventh International Conference on MOVPE XI; Berlin, Germany; 3 - 7 June 2002,
    In: Journal of Crystal Growth, Vol. 248, 2003, pp. 158 – 162
    DOI
  • Neumann, Stefan; Bakin, Andrey; Velling, Peter; Prost, Werner; Wehmann, Hergo Heinrich; Schlachetzki, Andreas; Tegude, Franz-Josef
    Growth of III/V resonant tunnelling diode on Si substrate with LP-MOVPE
    Eleventh International Conference on MOVPE XI; Berlin, Germany; 3 - 7 June 2002,
    In: Journal of Crystal Growth, Vol. 248, 2003, pp. 380 – 383
    DOI
  • Neumann, Stefan; Prost, Werner; Tegude, Franz-Josef
    Growth of carbon-doped LP-MOVPE InAlAs using non-gaseous sources
    In: Journal of Crystal Growth, Vol. 248, 2003, pp. 130 – 133
    DOI
  • Ehrich, S.; Agethen, Michael; Velling, Peter; Brennemann, Andreas; Bertenburg, Ralf M.; Brockerhoff, Wolfgang; Tegude, Franz-Josef
    Scaling of Small-Signal and RF-Noise Parameters with Respect to the Emitter-Area of Single HBT based on InP
    14th Workshop on Semiconductor Modeling and Simulation of Electron Devices (MSED), Barcelona, Spain, 16.10.2003 - 17.10.2003,
    Barcelona, Spain, 2003
  • Schneider, M.; Reimann, Thorsten; Tegude, Franz-Josef; Jäger, Dieter
    Multifunctional 1.55µm transistor-electroabsorption-transceiver
    2003
    Online Full Text
  • Schlothmann, Bernd Josef; Bertenburg, Ralf M.; Agethen, Michael; Velling, Peter; Brockerhoff, Wolfgang; Tegude, Franz-Josef
    Two-dimensional physical simulation of InGaAs/InP heterostructure bipolar transistors
    6th International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, EXMATEC 2002; Budapest; Hungary; 26 - 29 May 2002,
    In: Physica Status Solidi (C): Current Topics in Solid State Physics, 2003, Nr. 3, pp. 922 – 927
    DOI

    • 2002

  • Saǧlam, M.; Schumann, Bert; Müllerwiebus, Viki; Megej, Alexander; Auer, Uwe; Rodriguez-Gironés, Manuel; Judaschke, Rolf H.; Tegude, Franz-Josef; Hartnagel, Hans Ludwig
    450 GHz millimetre-wave signal from frequency tripler with heterostructure barrier varactors on gold substrate
    In: Electronics Letters, Vol. 38, 2002, Nr. 13, pp. 657 – 658
    DOI
  • Glösekötter, Peter; Pacha, Christian; Goser, Karl F.; Prost, Werner; Kim, Samuel O.; van Husen, Holger; Reimann, Thorsten; Tegude, Franz-Josef
    Asynchronous circuit design based on the RTBT monostable-bistable logic transition element (MOBILE)
    In: Proceedings of the 15th Symposium on Integrated Circuits and Systems Design / SBCCI 2002; Porto Alegre, Brazil; 9 - 14 September 2002. Piscataway: IEEE, 2002, pp. 365 – 370
    DOI, Online Full Text
  • Prost, Werner; Kim, Samuel O.; Glösekötter, Peter; Pacha, Christian; van Husen, Holger; Reimann, Thorsten; Goser, Karl F.; Tegude, Franz-Josef
    Experimental threshold logic implementations based on resonant tunnelling diodes
    In: Proceedings of the 9th IEEE International Conference on Electronics, Circuits, and Systems / ICECS 2002; 15 - 18 September 2002; Dubrovnik, Croatia. Piscataway: IEEE, Vol. 2, 2002, pp. 669 – 672
    DOI, Online Full Text
  • Otten, Frank; Kruis, Frank Einar; Prost, Werner; Tegude, Franz-Josef; Fissan, Heinz
    Deposition of Gas-Phase Generated PbS Nanocrystals onto Patterned Substrates
    7th International Conference on Nanometer-scale Science and Technology (Nano), 21th European Conference on Surface Science (ECOSS) , Malmö, Sweden, 24.06.2005 - 28.06.2002,
    Malmö, Sweden, 2002
  • Prost, Werner
    Resonant tunnelling diodes for digital circuit applications
    In: 4th International Conference on Advanced Semiconductor Devices and Microsystems: Conference Proceedings / ASDAM 2002; Smolenice, Slovakia; 14 - 16 October 2002. Piscataway: IEEE, 2002, pp. 115 – 124
    DOI, Online Full Text
  • Schneider, Marc; Reimann, Thorsten; Stöhr, Andreas; Neumann, S.; Tegude, Franz-Josef; Jäger, Dieter
    Monolithically integrated optoelectronic circuits using HBT, EAM, and TEAT
    In: Proceedings of the International Topical Meeting on Microwave Photonics (MWP 2002) / MWP 2002, November 5-8, Awaji, Japan. Awaji, Japan; Tokio: IEEE, 2002, pp. 349 – 352
    Online Full Text
  • Schneider, Marc; Reimann, Thorsten; Heinzelmann, Robert; Stöhr, Andreas; Velling, Peter; Neumann, S.; Bertenburg, Ralf M.; Tegude, Franz-Josef; Jäger, Dieter
    A novel 1.55µm HBT-Electroabsorption modulator
    In: Proceedings of the International Topical Meeting on Microwave Photonics (MWP `01) / MWP `01, 7-9 Jan. 2002, Long Beach, CA, USA. Piscataway: IEEE, 2002, pp. 21 – 24
    DOI
  • Spieler, J.; Blache, R.; Lese, A.; Kiesel, P.; Döhler, G.H.; Neumann, S.; Velling, Peter; Prost, Werner; Tegude, Franz-Josef
    Spontaneous Group III and V Superlattice Ordering in InGaAsP
    International Conference on Signal Processing (ICSP), Beijing, China, 26.08.2002 - 30.08.2002,
    Beijing, China, 2002
  • Spieler, J.; Blache, R.; Lese, A.; Kiesel, P.; Döhler, G.H.; Neumann, S.; Velling, Peter; Prost, Werner; Tegude, Franz-Josef
    Spontaneous Group III and V Superlattice Ordering in InGaAsP
    26th International Conference on the Physics of Semiconductors (ICPS), Edingburgh, U.K., 29.07.2002 - 02.08.2002,
    Edingburgh, U.K., 2002
  • Neumann, Stefan; Spieler, Jochen; Blache, R.; Kiesel, Peter; Prost, Werner; Döhler, Gottfried H.; Tegude, Franz-Josef
    MOVPE growth and polarisation dependence of (dis-)ordered InGaAsP PIN diodes for optical fibre applications
    In: 14th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / Stockholm, Sweden; 12 - 16 May 2002. Piscataway: IEEE, 2002, pp. 127 – 130
    DOI, Online Full Text
  • Schlothmann, B.; Bertenburg, Ralf M.; Agethen, Michael; Velling, Peter; Brockerhoff, Wolfgang; Tegude, Franz-Josef
    RF-Simulation of InGaAs/InP Heterostructure Bipolar Transistors
    13th Workshop on Physical Simulation of Semiconductor Devices (PSSD), Ilkley, West Yorkshire, U.K., 25.03.2002 - 26.03.2002,
    Ilkley, U.K., 2002
  • Ehrich, S.; Agethen, Michael; Brockerhoff, Wolfgang; Tegude, Franz-Josef
    A Consistent PSPICE-Model for InP HBT
    13th Workshop on Physical Simulation of Semiconductor Devices (PSSD), Ilkley, West Yorkshire, U.K., 25.03.2002 - 26.03.2002,
    Ilkley, U.K., 2002
  • Reimann, T.; Schneider, Markus; Neumann, Stefan; Stöhr, Andreas; Jäger, Dieter; Tegude, Franz-Josef
    Waveguide HBT electroabsorption modulators : Devices and circuits
    In: 14th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / Stockholm, Sweden; 12 - 16 May 2002. Piscataway: IEEE, 2002, pp. 123 – 126
    DOI, Online Full Text
  • Reimann, Thorsten; Schneider, Marc; Neumann, S.; Stöhr, Andreas; Tegude, Franz-Josef; Jäger, Dieter
    Waverguide HBT electroabsorption modulators : devices and circuits
    In: Proceedings of the 14th International Conference on Indium Phosphide and Related Materials (IPRM) / IPRM: May 12-16, 2002, Stockholm, Sweden. Stockholm, Schweden; Piscataway: IEEE, 2002, pp. 123 – 126
    Online Full Text
  • Reimann, Thorsten; Schneider, Markus; Neumann, Stefan; Tegude, Franz-Josef; Jäger, Dieter
    Different approaches for integrating HBTs and EAMs
    In: The 10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications / EDMO 2002 ; 18 - 19 November; Manchester, UK. Manchester, UK; Piscataway: IEEE, 2002, pp. 149 – 154
    DOI, Online Full Text
  • Otten, Frank; Auer, Uwe; Kruis, Frank Einar; Prost, Werner; Tegude, Franz-Josef; Fissan, Heinz
    Lithographic Tools for Producing Patterned Films Compsed of Gas Phase Generated Nanocrystals Impress
    In: Material Science and Technology, Vol. 18, 2002, Nr. 7, pp. 717 – 720
    DOI
  • Glösekötter, Peter; Pacha, Christian; Goser, Karl F.; Prost, Werner; Kim, Samuel; van Husen, Holger; Reimann, Thorsten; Tegude, Franz-Josef
    Pseudo dynamic gate design based on the Resonant Tunneling-Bipolar Transistor (RTBT)
    In: Proceedings of the 32nd European Solid-State Device Research Conference / ESSDERC 2002; Firenze, Italy; 24 - 26 September 2002 / Gnani, E.; Baccarani, G.; Rudan, M. (Eds.). Piscataway: IEEE Computer Society, 2002, pp. 211 – 214
    DOI, Online Full Text

    • 2001

  • Agethen, Michael; Schüller, S.; Velling, Peter; Brockerhoff, Wolfgang; Tegude, Franz-Josef
    Carbon Doped InP/InGaAs HBT : Consistent Small_Signal and RF-Noise Modelling and Characterization
    Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Cagliari, Italy, 27.05.2001 - 30.05.2001,
    Cagliari, Italy, 2001
  • Agethen, Michael; Schüller, Silja; Velling, Peter; Brockerhoff, Wolfgang; Tegude, Franz-Josef
    Consistent small-signal and rf-noise parameter modelling of carbon doped InP/InGaAs HBT
    In: International IEEE Microwave Symposium Digest / MTT-S 2001; Phoenix, United States; 20 - 25 May 2001. Piscataway: IEEE, Vol. 1, 2001, pp. 1765 – 1768
    DOI, Online Full Text
  • Schüller, S.; Bertenburg, Ralf M.; Agethen, Michael; Brennemann, Andreas; Brockerhoff, Wolfgang; Tegude, Franz-Josef
    A New Consistent and Scalable PSPICE Model for Enhancement and Depletion-Type HFET
    11th Conference and Exhibition on Microwaves, Radio Communication and Electromagnetic Compatibility (MIOP), Stuttgart, Germany, 08.05.2001 - 10.05.2001,
    Stuttgart, Germany, 2001
  • Ehrich, S.; Agethen, Michael; Bertenburg, Ralf M.; Brennemann, Andreas; Brockerhoff, Wolfgang; Tegude, Franz-Josef
    A Consistent and Scalable PSPICE Compound Semiconductor HFET Model for DC- and S-Parameter Simulation
    9th European GaAs and other Semiconductor Application Symposium (GAAS AS), London, U.K., 24.09.2001 - 25.09.2001,
    London, U.K., 2001
  • Otten, F.; Müschenborn, P.; Trampe, Andreas; Neumann, S.; Fissan, Heinz
    Unipolar Aerosol Charger for Single Charged Particles 3 to 1000 nm
    2nd Asian Aerosol Conference (AAC), Pusan, Korea, 02.07.2001 - 04.07.2001,
    Pusan, Korea, 2001
  • Otten, Frank; Gerber, W.; Kruis, Frank Einar; Fissan, Heinz
    Development of a Nanoparticle Precipitation and Characterization System
    Intational Symposium on Nanoparticles: Aeorosols and Materials, Pusan, Korea, 05.07.2001 - 07.07.2001,
    Pusan, Korea, 2001
  • Mihaila, M.; Heedt, C.; Tegude, Franz-Josef
    On the Microscopic Origin of 1/f Noise in Lattice-Matched InAlAs/InGaAs HEMT's
    In: Proceedings of the Romanian Academy Series A: Mathematics Physics Technical Sciences Information Science, 2001
  • Reimann, Thorsten; Schneider, Marc; Velling, Peter; Neumann, S.; Agethen, Michael; Bertenburg, Ralf M.; Heinzelmann, Robert; Stöhr, Andreas; Jäger, Dieter; Tegude, Franz-Josef
    Demonstration von Heterostruktur-Bipolartransistoren und Elektroabsorptionsmodulatoren auf der Basis eines multifunktionalen Schichtdesigns
    65. Physikertagung und Frühjahrstagung des Arbeitskreises Festkörperphysik der DPG, Hamburg, Germany,
    Hamburg, 2001
    Online Full Text
  • Reimann, Thorsten; Schneider, Markus; Velling, Peter; Neumann, Stefan; Agethen, Michael; Bertenburg, Ralf M.; Heinzelmann, Robert; Stöhr, Andreas; Jäger, Dieter; Tegude, Franz-Josef
    Integration of heterostructure bipolar transistor and electroabsorption waveguide modulator based on a multifunctional layer design for 1.55μm
    In: 13th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM 2001; Nara, Japan; 14.05.2001 - 18.05.2001. Piscataway: IEEE, 2001, pp. 440 – 443
    DOI, Online Full Text
  • Otten, W.; Glösekötter, Peter; Velling, Peter; Brennemann, Andreas; Prost, Werner; Goser, Karl F.; Tegude, Franz-Josef
    InP-based monolithically integrated RTD/HBT MOBILE for logic circuits
    In: 13th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM 2001; Nara, Japan; 14.05.2001 - 18.05.2001. Piscataway: IEEE, 2001, pp. 232 – 235
    DOI, Online Full Text
  • Reimann, Thorsten; Schneider, Marc; Neumann, S.; van Husen, Holger; Stöhr, Andreas; Jäger, Dieter; Tegude, Franz-Josef
    Integration of Heterostructure Bipolartransistors with Electroabsorption Waveguide Modulators and Applications
    11th European Heterostructure Technology Workshop, Padova, Italien, 28. - 30. Oktober 2001,
    Padua, 2001
    Online Full Text
  • Prost, Werner; Auer, Uwe; Tegude, Franz-Josef; Pacha, Christian; Goser, Karl F.; Duschl, R.; Eberl, Karl; Schmidt, O.G.
    Tunnelling diode technology
    In: Proceedings of the 31s International Symposium on Multiple-Valued Logic / 22-24 May 2001; Warsaw, Poland. Piscataway: IEEE, 2001, pp. 49 – 58
    DOI, Online Full Text
  • Prost, Werner; Auer, Uwe; Degenhardt, Jan; Brennemann, Andreas; Pacha, Christian; Goser, Karl F.; Tegude, Franz-Josef
    Technology of a depth-2 full-adder circuit using the InP RTD/HFET mobile
    In: 13th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM 2001; Nara, Japan; 14.05.2001 - 18.05.2001. Piscataway: IEEE, 2001, pp. 228 – 231
    DOI, Online Full Text
  • Auer, Uwe; Prost, Werner; Agethen, Michael; Tegude, Franz-Josef; Duschl, R.; Eberl, Karl
    Low-voltage MOBILE logic module based on Si/SiGe interband tunnelling diodes
    In: IEEE Electron Device Letters, Vol. 22, 2001, Nr. 5, pp. 215 – 217
    DOI, Online Full Text
  • Mihaila, Mihai N.; Scheffer, Frank; Heedt, Christian; Tegude, Franz-Josef
    Nonlinear Effects in the 1/f Noise of a 2D Electron Gas
    9th IFAC Symposium on Large Scale Systems: Theory and Applications 2001, Bucharest, Romania, 18-20 July 2001,
    In: IFAC Proceedings Volumes, Vol. 34, 2001, Nr. 8, pp. 319 – 324
    DOI
  • Pacha, Christian; Prost, Werner; Tegude, Franz-Josef; Glösekötter, Peter; Goser, Karl
    Resonant Tunneling Device Logic : A Circuit Designer's Perspective
    In: Circuit Paradigm in the 21st Century: ECCTD ’01 ; Proceedings of the 15th European Conference on Circuit Theory ; Helsinki University of Technology, Finland, 28th - 31st August 2001 ; Vol. 1 / European Conference on Circuit Theory and Design (ECCTD) ; 28th - 31st August 2001, Espoo, Finland / Porra, Veikko (Eds.). Espoo: Helsinki University of Technology, Dept. of Electrical and Communications Engineering, 2001, pp. 189 – 192

    • 2000

  • Otten, F.; Kish, László Bela; Granqvist, Claes Göran; Vandamme, Lode K.J.; Vajtai, Róbert; Kruis, Frank Einar; Fissan, Heinz
    Charge diffusion noise in monocrystalline PbS nanoparticle films
    In: Applied Physics Letters (APL), Vol. 77, 2000, Nr. 21, pp. 3421 – 3422
    DOI (Open Access)
  • Glösekötter, Peter; Pacha, Christian; Goser, Karl F.; Wirth, Gilson Inácio; Prost, Werner; Auer, Uwe; Agethen, Michael; Velling, Peter; Tegude, Franz-Josef
    Digital circuit design based on the resonant-tunneling-hetero-junction-bipolar-transistor
    In: Proceedings of the 13th Symposium on Integrated Circuits and Systems Design / SBCCI 2000; Manaus, Brazil; 18 - 24 September 2000. Piscataway: IEEE, 2000, pp. 150 – 155
    DOI, Online Full Text
  • Velling, Peter
    A comparative study of GaAs- and InP-based HBT growth by means of LP-MOVPE using conventional and non gaseous sources
    In: Progress in Crystal Growth and Characterization of Materials, Vol. 41, 2000, Nr. 1-4, pp. 85 – 131
    DOI
  • Brennemann, Andreas; Bushehri, E.; Agethen, Michael; Bertenburg, Ralf M.; Brockerhoff, Wolfgang; Staroselsky, Victor I.; Bratov, V.; Schlichter, T.; Tegude, Franz-Josef
    11-stage ring oscillator with nonlinear negative feedback for high speed digital applications
    In: International Conference on Indium Phosphide and Related Materials: Conference Proceedings / Williamsburg, USA; 14 -18 May 2000. Piscataway: IEEE, 2000, pp. 577 – 580
    DOI, Online Full Text
  • Kim, Samuel O.; Velling, Peter; Auer, Uwe; Agethen, Michael; Prost, Werner; Tegude, Franz-Josef
    High f/sub T/, high current gain InP/InGaAs : C HBT grown by LP-MOVPE with non-gaseous sources
    In: International Conference on Indium Phosphide and Related Materials: Conference Proceedings / Williamsburg, USA; 14 -18 May 2000. Piscataway: IEEE, 2000, pp. 470 – 472
    DOI, Online Full Text
  • Prost, Werner; Auer, Uwe; Tegude, Franz-Josef; Pacha, Christian; Goser, Karl F.; Janßen, Guido; van der Roer, T.
    Manufacturability and robust design of nanoelectronic logic circuits based on resonant tunnelling diodes
    In: International Journal of Circuit Theory and Applications, Vol. 28, 2000, Nr. 6, pp. 537 – 552
    DOI
  • Spieler, Jochen; Kippenberg, Thomas; Krauß, J.; Kiesel, Peter; Döhler, Gottfried H.; Velling, Peter; Prost, Werner; Tegude, Franz-Josef
    Electro-optical examination of the band structure of ordered InGaAs
    In: Applied Physics Letters (APL), Vol. 76, 2000, Nr. 1, pp. 88 – 90
    DOI
  • Prost, Werner; Velling, Peter; Janßen, Guido; Auer, Uwe; Brennemann, Andreas; Glösekötter, P.; Goser, K.F.; Tegude, Franz-Josef
    Resonant-Tunnelling 3-Terminal Devices for High-Speed Logic Application
    24th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Aegean Sea, Greece, 29.05.2000 - 02.06.2000,
    Aegean Sea, Greece, 2000
  • Reimann, Thorsten; Schneider, Marc; Velling, Peter; Neumann, S.; Agethen, Michael; Bertenburg, Ralf M.; Heinzelmann, Robert; Stöhr, Andreas; Jäger, Dieter; Tegude, Franz-Josef
    Heterostructure bipolartransistor combining electroabsorption waveguide modulator based on a multifunctional layer design for 1.55µm
    12th IEEE III-V Semiconductor Device Simulation Workshop in combination with the HBT Workshop, Duisburg, Germany, 2000,
    Duisburg, 2000
    Online Full Text
  • Velling, Peter; Agethen, Michael; Prost, Werner; Tegude, Franz-Josef
    InAlAs/InGaAs/InP heterostructures for RTD and HBT device applications grown by LP-MOVPE using non-gaseous sources
    In: Journal of Crystal Growth, Vol. 221, 2000, Nr. 1-4, pp. 722 – 729
    DOI
  • Berntgen, Jürgen; Behres, Alexander; Kluth, Jürgen; Heime, Klaus; Daumann, Walter; Auer, Uwe; Tegude, Franz-Josef
    Hooge parameter of InGaAs bulk material and InGaAs 2DEG quantum well structures based on InP substrates
    15th Int. Conf. on Noise in Physical Systems and 1/f Fluctuations, Hongkong, 23.08.1999 - 26.08.1999,
    In: Microelectronics Reliability, Vol. 40, 2000, Nr. 11, pp. 1911 – 1914
    DOI
  • Kim, Samuel O.; Velling, Peter; Agethen, Michael; Reimann, Thorsten; Prost, Werner; Tegude, Franz-Josef
    InP-Based HBT with Graded InGaAlAs Base Layer Grown by LP-MOVPE
    In: Proceedings of the European GaAs and other Semiconductor Application Symposium / GAAS AS 2000; Paris, France; 02.10.2000 - 03.10.2000, 2000
    Online Full Text
  • Pacha, Christian; Kessler, Oliver; Glösekötter, Peter; Goser, Karl F.; Prost, Werner; Brennemann, Andreas; Auer, Uwe; Tegude, Franz-Josef
    Parallel adder design with reduced circuit complexity using resonant tunneling transistors and threshold logic
    In: Analog Integrated Circuits and Signal Processing, Vol. 24, 2000, Nr. 1, pp. 7 – 25
    DOI
  • Keiper, Dietmar; Velling, Peter; Prost, Werner; Agethen, Michael; Tegude, Franz-Josef; Landgren, Gunnar
    Metalorganic vapour phase epitaxy growth of InP-based heterojunction bipolar transistors with carbon doped InGaAs base using tertiarybutylarsine and tertiarybutylphosphine in N₂ ambient
    In: Japanese Journal of Applied Physics, Vol. 39, 2000, Nr. 11, pp. 6162 – 6165
    DOI
  • Velling, Peter; Agethen, Michael; Herenda, E.; Prost, Werner; Stolz, W.; Tegude, Franz-Josef
    LP-MOVPE Growth of Carbon Doped In0.48Ga0.52P/GaAs HBT Using an All-Liquid-Source Configuration
    In: 26th International Symposium on Compound Semiconductors / ISCS 2000; Berlin, Germany; 22.08.2000 - 26.08.2000, 2000
  • Pacha, Christian; Auer, Uwe; Burwick, Christian; Glösekötter, Peter; Brennemann, Andreas; Prost, Werner; Tegude, Franz-Josef; Goser, Karl F.
    Threshold logic circuit design of parallel adders using resonant tunneling devices
    11th International Symposium on System-Level Synthesis and Design (ISS'98); Hsinchu, Taiwan; 2 - 4 December 1998,
    In: IEEE Transactions on Very Large Scale Integration (VLSI) Systems, Vol. 8, 2000, Nr. 5, pp. 558 – 572
    DOI, Online Full Text

    • 1999

  • Fix, W.; Welker, M.; Geisselbrecht, W.; Kiesel, P.; Döhler, G.H.; Velling, Peter; Prost, Werner; Tegude, Franz-Josef
    A monolithically integrated smart pixel based on a photoconductive switch and a n-i-p-i modulator
    In: Conference on Lasers and Electro-Optics / CLEO '99; Baltimore, USA; 23.05.1999 - 28.05.1999. Piscataway: IEEE, 1999
    DOI, Online Full Text
  • Hilburger, Ulrich; Fix, Walter; Mayer, R.; Geißelbrecht, Wolfgang; Malzer, Stefan; Velling, Peter; Prost, Werner; Tegude, Franz-Josef; Döhler, Gottfried H.
    Extension of the epitaxial shadow mask MBE technique for the monolithic integration and in situ fabrication of novel device structures
    In: Journal of Crystal Growth, Vol. 201-202, 1999, pp. 574 – 577
    DOI
  • Auer, Uwe; Prost, Werner; Brockerhoff, Wolfgang; Tegude, Franz-Josef
    Consistent physical model for the gate-leakage and breakdown in InAlAs/InGaAs HFET's
    In: Proceedings of the 11th International Conference on Indium Phosphide and Related Materials / IPRM`99; Davos, Switz; 16 -20 May 1999. Piscataway: IEEE, 1999, pp. 439 – 442
    DOI, Online Full Text
  • Janßen, Guido; van de Roer, T.G.; Auer, Uwe; Tegude, Franz-Josef; Pacha, C.; Goser, K.F.; Glösekötter, P.; Förster, A.; Malindretos, J.; Kelly, M.J.
    Logic circuits with reduced complexity based on devices with higher functionality
    In: Proceedings of the 2nd STW Workshop on Semiconductor Advances for Future Electronics / SAFE 99, Mierlo, Netherlands, 24-25 November 1999, 1999, pp. 219 – 224
  • Mekonnen, Gebre Giorgis; Schlaak, Wolfgang; Bach, Heintz Gunter; Steingrüber, Ralf; Seeger, Angela; Engel, Th.; Passenberg, Wolfgang; Umbach, Andreas; Schramm, Carsten; Unterbörsch, Günter; van Waasen, Stefan
    37-GHz Bandwidth InP-Based Photoreceiver OEIC Suitable for Data Rates up to 50 Gb/s
    In: IEEE Photonics Technology Letters, Vol. 11, 1999, Nr. 2, pp. 257 – 259
    DOI, Online Full Text
  • Umbach, Andreas; Engel, Thomas; Bach, Heinz-Gunter; van Waasen, Stefan; Dröge, Elmar; Strittmatter, André; Ebert, Wilhelm; Passenberg, Wolfgang; Steingrüber, Rolf; Schlaak, Wolfgang; Mekonnen, Gebre G.; Unterbörsch, Günter; Bimberg, Dieter
    Technology of InP-based 1.55-μm ultrafast OEMMIC's : 40-Gbit/s broad-band and 38/60-GHz narrow-band photoreceivers
    In: IEEE Journal of Quantum Electronics, Vol. 35, 1999, Nr. 7, pp. 1024 – 1031
    DOI, Online Full Text
  • Pacha, Christian; Gloesekoetter, Peter; Goser, Karl F.; Auer, Uwe; Prost, Werner; Tegude, Franz-Josef
    Resonant tunneling transistors for threshold logic circuit applications
    In: Proceedings of the 9th IEEE Great Lakes Symposium on VLSI / GLSVLSI '99; Ann Arbor, USA; 4 - 6 March 1999. Piscataway: IEEE, 1999, pp. 344 – 345
    DOI, Online Full Text
  • Prost, Werner; Auer, Uwe; Pacha, Christian; Brennemann, Andreas; Goser, Karl F.; Tegude, Franz-Josef
    Novel MOBILE gates with low-power, relaxed parameter sensitivity, and increased driving capability
    In: Proceedings of the 11th International Conference on Indium Phosphide and Related Materials / IPRM`99; Davos, Switz; 16 -20 May 1999. Piscataway: IEEE, 1999, pp. 411 – 414
    DOI, Online Full Text
  • Kopperschmidt, P.; Senz, S T.; Scholz, R.; Kästner, G.; Gösele, U.; Velling, Peter; Prost, Werner; Tegude, Franz-Josef; Gottschalch, V.; Wada, K.
    Strain Relaxation During Heteroepitaxy on Twist-Bonded Thin Gallium Arsenide Substrates
    In: MRS (Materials Research Society) Proceedings, Vol. 535: III-V and IV-IV Materials and Processing Challenges for Highly Integrated Microelectronics and Optoelectronics, 1999, pp. 45
    DOI
  • Velling, Peter; Agethen, Michael; Herenda, E.; Prost, Werner; Stolz, W.; Tegude, Franz-Josef
    LP-MOVPE grown GaAs- and InP-based HBTs using all-liquid alternative sources
    In: Proceedings of the 11th International Conference on Indium Phosphide and Related Materials / IPRM`99; Davos, Switz; 16 -20 May 1999. Piscataway: IEEE, 1999, pp. 467 – 470
    DOI, Online Full Text
  • Berntgen, Jürgen; Heime, Klaus; Daumann, Walter; Auer, Uwe; Tegude, Franz-Josef; Matulionis, Arvydas
    The 1/f noise of InP based 2DEG devices and its dependence on mobility
    In: IEEE Transactions on Electron Devices (T-ED), Vol. 46, 1999, Nr. 1, pp. 194 – 203
    DOI, Online Full Text
  • Velling, Peter; Agethen, Michael; Herenda, E.; Prost, Werner; Stolz, W.; Tegude, Franz-Josef
    All Liquid Source Growth of Carbon Doped In0.53Ga0.47As/InP HBT by Means of LP-MOVPE
    8th Europ. Workshop on MOVPE and Rel. Growth Techniques (EW MOVPE), Prag, Czech Republic, 08.06.1999 - 11.06.1999,
    Prag, Czech Republic, 1999
  • Prost, Werner; Tegude, Franz-Josef
    Winziger als die Mikro-Elektronik
    Forum Forschung '99, Gerhard-Mercator-Universität Duisburg, 1999,
    Duisburg, 1999
  • Berntgen, Jürgen; Lim, Teck Leong; Daumann, Walter; Auer, Uwe; Tegude, Franz-Josef; Matulionis, Arvydas; Heime, Klaus
    Hooge parameter of InP-based 2DEG structures and its dependence on channel design and temperature
    In: The seventh van der ziel symposium on quantum 1/f noise and other low frequency fluctuations in electronic devices / 7. Symposium ; St. Louis, Missouri; 7.-8.8.1998 / Handel, P.H.; Chung, A.L. (Eds.). College Park: American Institute of Physics (AIP), 1999, pp. 59 – 70
    DOI (Open Access)
  • Agethen, Michael; Reuter, R.; Breder, T.; Bertenburg, Ralf M.; Brockerhoff, Wolfgang; Tegude, Franz-Josef
    High Frequency Noise
    In: Wiley Encyclopedia of Electrical and Electronics Engineering / Webster, John G. (Eds.). Hoboken: Wiley & Sons, Vol. 14, 1999, pp. 392 – 410
  • Otten, F.; Kruis, Frank Einar; Peled, A.; Prost, W.; Fissan, Heinz; Tegude, Franz-Josef
    Electrical Properties of Discontinuous PbS Nanoparticle Films on MSM and MIM Detectors
    In: Book of abstracts / Second Joint NSF-ESF Symposium on Nanoparticles: Technologies and Applications: Tacoma, Washington, USA, October 10, 1999 / Joint NSF-ESF Symposium on Nanoparticles: Technologies and Applications ; (Tacoma, Wash.) : 1999.10.10 / Pui, David H. (Eds.), 1999, pp. P4-1 – P4-4

    • 1998

  • Dillmann, F.; Marso, M.; Hardtdegen, H.; Kordos, P.; Lüth, H.; Brennemann, Andreas; Tegude, Franz-Josef; Kwaspen, J.M.; Kaufmann, L.M.F.
    PIN-PJBT Integration : A New GaAs Based Optoelectronic Receiver
    In: Proceedings of the 28th European Solid State Device Research Conference / ESSDERC`98; Bordeaux, France; 08.09.1998 - 10.09.1998. Piscataway: IEEE, 1998, pp. 424 – 427
    Online Full Text
  • Veiling, P.; Janßen, Guido; Auer, Uwe; Prost, Werner; Tegude, Franz-Josef
    NAND/NOR logic circuit using single InP-based RTBT
    In: Electronics Letters, Vol. 34, 1998, Nr. 25, pp. 2390 – 2392
    DOI
  • Breder, T.; Reuter, Ralf; Daumann, Walter; Schreurs, Dominique M.; van der Zanden, Koen; Brockerhoff, Wolfgang; Tegude, Franz-Josef
    A new consistent rf-and noise model with special emphasis on impact ionisation for dual-gate HFET in cascode configuration
    In: 28th European Microwave Conference / EuMC 1998; Amsterdam, Netherlands; 5 - 9 October 1998. Piscataway: IEEE Computer Society, Vol. 1, 1998, pp. 323 – 327
    DOI, Online Full Text
  • Alles, Matthias; Auer, Uwe; Tegude, Franz-Josef; Jäger, Dieter
    Distributed velocity-matched 1.55 μm InP travelling-wave photodetector for generation of high millimeterwave signal power
    In: Proceedings of the 1998 IEEE MTT-S International Microwave Symposium / MTT-S`98, Baltimore, USA, 07.06.1998 - 12.06.1998. Piscataway: IEEE, Vol. 3, 1998, pp. 1233 – 1236
  • Alles, M.; Auer, Uwe; Tegude, Franz-Josef; Jäger, Dieter
    Distributed Velocity-matched 1.55um InP Travelling-Wave Photodetector for Generation of High Millimeterwave Signal Power
    In: MTT-S International Microwave Symposium and Exhibition / MTT-S International Microwave Symposium and Exhibition, Baltimore, Maryland, 1998. Baltimore, Maryland, 1998, pp. 1233 – 1236
    Online Full Text
  • Velling, Peter; Fix, Walter; Geißelbrecht, Wolfgang; Prost, Werner; Döhler, Gottfried H.; Tegude, Franz-Josef
    InGaP/GaAs shadow-mask for optoelectronic integration and MBE regrowth
    In: Journal of Crystal Growth, Vol. 195, 1998, Nr. 1-4, pp. 490 – 494
    DOI
  • Auer, Uwe; Kim, Samuel O.; Agethen, Michael; Veiling, P.; Prost, Werner; Tegude, Franz-Josef
    Fast fabrication of InP-based HBT using a novel coplanar design
    In: Electronics Letters, Vol. 34, 1998, Nr. 19, pp. 1885 – 1886
    DOI (Open Access)
  • Auer, Uwe; Brockerhoff, Wolfgang; Prost, Werner; Tegude, Franz-Josef
    Analytic simulation of impact ionization in InAlAs/InGaAs HFET's
    In: Proceedings of the 10th International Conference on Indium Phosphide and Related Materials / IPRM`98, Tsukuba, Japan, 11.05.1998 - 15.05.1998. Piscataway: IEEE, 1998, pp. 659 – 662
    Online Full Text
  • Jäger, I.; Auer, Uwe; Tegude, Franz-Josef; Jäger, D.
    Nonlinear RTD Transmission Lines
    In: Proceedings of the 5th International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits / INMMC`98; Duisburg, Germany; 01.10.1998 - 02.10.1998, 1998, pp. 82 – 83
  • Dillmann, F.; Brennemann, P.; Hardtdegen, Hilde; Marso, Michel; Löken, M.; Kordoš, Peter; Lüth, Hans Joachim; Tegude, Franz-Josef; Kwaspen, J.M.M.; Kaufmann, Leon Marcel Freddy
    A new concept for a monolithically integrated optoelectronic receiver based on a GaAs-PIN-photodiode and a PJBT
    In: Proceedings of the 2nd International Conference on Advanced Semiconductor Devices And Microsystems / ASDAM 1998; Smolenice; Slovakia; 5 -7 October 1998. Piscataway: IEEE, 1998, Nr. October, pp. 291 – 294
    DOI, Online Full Text
  • Velling, Peter; Janßen, Guido; Agethen, Michael; Prost, Werner; Tegude, Franz-Josef
    InGaP/GaAs hole barrier asymmetry determined by (0 0 2) X-ray reflections and p-type DB-RTD hole transport
    In: Journal of Crystal Growth, Vol. 195, 1998, Nr. 1-4, pp. 117 – 123
    DOI
  • Prost, Werner; Auer, Uwe; Pacha, Christian; Brennemann, Andreas; Janßen, Guido; Bertenburg, Ralf M.; Brockerhoff, Wolfgang; Bushehri, E.; Goser, Karl F.; Tegude, Franz-Josef
    InP-based HFET's and RTD's for high speed digital circuitry
    In: Conference Proceedings of the International Symposium on Signals, Systems and Electronics / ISSSE'98; Pisa, Italy; 29 September - 2 October 1998. Piscataway: IEEE, 1998, pp. 45 – 49
    DOI, Online Full Text
  • Pacha, Christian; Goser, Karl; Brennemann, Andreas; Prost, Werner
    A threshold logic full adder based on resonant tunneling transistors
    In: 24th European Solid-State Circuits Conference / ESSCIRC 1998; The Hague; Netherlands; 22 - 24 September 1998. Piscataway: IEEE, 1998, pp. 428 – 431
    DOI, Online Full Text
  • Brennemann, Andreas; Bushehri, E.; Daumann, Walter; Agethen, Michael; Bertenburg, Ralf M.; Brockerhoff, Wolfgang; Staroselsky, Victor I.; Bratov, V.; Schlichter, T.; Tegude, Franz-Josef
    InP-based logic gates for low power monolithic optoelectronic circuits
    In: Proceedings of the IEEE International Conference on Electronics, Circuits and Systems / ICECS'98 - Surfing the Waves of Science and Technology; Lisboa, Portugal; 7 - 10 September 1998. Piscataway: IEEE, Vol. 3, 1998, pp. 393 – 396
    DOI, Online Full Text
  • Janßen, Guido; Auer, Uwe; Brennemann, Andreas; Prost, Werner; Tegude, Franz-Josef
    Manufacturability of III/V Resonant Tunneling Diodes for Logic Circuit Applications
    3rd Workshop on Innovative Circuits and Systems for Nano Electronics (Nano-EL), München, Germany, 05.10.1998 - 06.10.1998,
    1998
  • Haase, M.; Prost, Werner; Veiling, P.; Liu, Q.; Tegude, Franz-Josef
    HR XRD for the analysis of ultrathin centrosymmetric strained DB-RTD heterostructures
    In: Thin Solid Films, Vol. 319, 1998, Nr. 1-2, pp. 25 – 28
    DOI
  • Prost, Werner; Tegude, Franz-Josef
    Tunnelstrukturen - Grundlagen und Bauelemente
    In: Nanostrukturen in Halbleitern / Blockseminar am 1. und 2. Oktober 1997 im Rahmen des Graduiertenkollegs "Metrologie in Physik und Technik" der Technischen Universität Braunschweig und der Physikalisch-Technischen Bundesanstalt Braunschweig / Schlachetzki, Andreas (Eds.). Bremerhaven: Verlag für Neue Wissenschaft, 1998, pp. 19 – 24
  • Prost, Werner; Kruis, Frank Einar; Otten, Frank; Nielsch, Kornelius; Rellinghaus, Bernd; Auer, Uwe; Peled, Aaron Z.; Wassermann, Eberhard; Fissan, Heinz; Tegude, Franz-Josef
    Monodisperse aerosol particle deposition : Prospects for nanoelectronics
    In: Microelectronic Engineering, Vol. 41-42, 1998, pp. 535 – 538
    DOI

    • 1997

  • Bach, H.-G.; Bertenburg, Ralf M.; Bülow, H.; Jacumeit, G.; Umbach, A.; Unterbörsch, G.; Veith, G.; van Waasen, Stefan
    Ultrafast Monolithic InP-Based Photoreceiver Module Detecting 40Gbit/s Optical TDM RZ Modulated Pulse Sequence
    In: Proceedings of the 23th European Conference on Optical Communication / ECOC`97; Edingburgh, U.K.; 22.09.1997 - 25.09.1997. Piscataway: IEEE, 1997, pp. 101 – 104
    Online Full Text
  • van Waasen, Stefan; Umbach, Andreas; Auer, Uwe; Bach, Heinz-Gunter; Bertenburg, Ralf M.; Janßen, Guido; Mekonnen, Gebre Giorgis; Passenberg, Wolfgang; Reuter, Ralf; Schlaak, Wolfgang; Schramm, Carsten; Unterbörsch, Günter; Wolfram, Peter; Tegude, Franz-Josef
    27-GHz bandwidth high-speed monolithic integrated optoelectronic photoreceiver consisting of a waveguide fed photodiode and an InAlAs/InGaAs-HFET traveling wave amplifier
    In: IEEE Journal of Solid-State Circuits, Vol. 32, 1997, Nr. 9, pp. 1394 – 1399
    DOI, Online Full Text
  • Agethen, Michael; Breder, T.; Reuter, R.; Brockerhoff, Wolfgang; Tegude, Franz-Josef
    A New Optimization Strategy Based on the Theory of Evolution for the RF-Modeling of HFET
    International Workshop on Exp. Based FET Device Modell. & Rel. Nonlin. Circuit Design; Kassel, Germany; 17.07.1997 - 18.07.1997,
    Kassel, Germany, 1997
  • Schroeder, W.; Prost, Werner; Wolff, I.
    Full wave BIE analysis of travelling waves in unbiased/velocity saturated FET structures with linearly controlled current density
    In: 1997 IEEE MTT-S International Microwave Symposium Digest / Denver, USA; 8-13 June 1997. Piscataway: IEEE, Vol. 1, 1997, pp. 159
    DOI, Online Full Text
  • Lakner, Hubert; Mendorf, C.; Bollig, Bernd; Prost, Werner; Tegude, Franz-Josef
    Determination of interface composition in III-V heterojunction devices (HBT and RTD) with atomic resolution using STEM techniques
    3rd International Workshop on Expert Evaluation & Control of Compound Semicond. Mat. & Technologies (EXMATEC), Freiburg, Germany, 12.05.1996 - 15.05.1996,
    In: Materials Science and Engineering B, Vol. 44, 1997, Nr. 1-3, pp. 52 – 56
    DOI
  • Prost, Werner; Haase, M.; Velling, Peter; Liu, Q.; Tegude, Franz-Josef
    HR XRD for the Analysis of Ultra-Thin Centro-Symmetric Strained DB-RTD Heterostructures
    European Materials Research Conference (E-MRS), Strasbourg, France, 16.06.1997 - 20.06.1997,
    Strasbourg, France, 1997
  • Alles, M.; Auer, U.; Tegude, Franz-Josef; Jäger, Dieter
    High-speed Travelling-Wave Photodetectors for Wireless Optical Millimeter Wave Transmission
    In: Proceedings of IEEE International Topical Meeting on Microwave Photonics / MWP '97: from September 3 through 5 at Schloß Hugenpoet, Duisburg/Essen. Duisburg/Essen; Duisburg, Essen, 1997, pp. 103 – 106
  • Alles, M.; Auer, U.; Tegude, Franz-Josef; Jäger, Dieter
    High-Speed Travelling-Wave Photodetectors for Optical Generation of Millimeterwaves
    In: Proceedings of the Asia Pacific Microwave Conference / APMC '97, 2-5 Dec. 1997, Hong Kong. Hong Kong, Vol. 2, 1997, pp. 573 – 576
  • Braasch, T.; David, G.; Hülsewede, R.; Auer, U.; Tegude, Franz-Josef; Jäger, Dieter
    Frequency and time domain characterization of nonlinear transmission lines using electro-optic probing techniques
    MIOP ´97, Sindelfingen,
    Sindelfingen, 1997
  • Alles, M.; Auer, Uwe; Tegude, Franz-Josef; Jäger, Dieter
    High-speed travelling-wave photodetectors for optical generation of millimeter waves
    In: Proceedings of 1997 Asia-Pacific Microwave Conference / APMC´97; Hongkong; 02.12.1997 - 05.12.1997. Piscataway: IEEE, Vol. 2, 1997, pp. 573 – 576
    DOI, Online Full Text
  • Tegude, Franz-Josef; Daumann, Walter; Reuter, Ralf; Brockerhoff, Wolfgang
    InAlAs/InGaAs/InP dual-gate-HFET's : New aspects and properties
    In: International Conference on Indium Phosphide and Related Materials 1997: Conference Proceedings / IPRM`97; Cape Cod, USA; 11-15 May 1997. Piscataway: IEEE, 1997, pp. 181 – 184
    DOI, Online Full Text
  • Velling, Peter; Haase, M.; Agethen, Michael; Janßen, Guido; Prost, Werner; Tegude, Franz-Josef
    3D-Integration of Quantum-Effect Devices (RTD) in HBT's by Means of LP-MOVPE
    7th European Workshop on MOVPE and Rel. Growth Techniques (EW MOVPE), Berlin, Germany, 08.06.1997 - 11.06.1997,
    Berlin, Germany, 1997
  • Auer, Uwe; Janßen, Guido; Agethen, Michael; Reuter, Ralf; Prost, Werner; Tegude, Franz-Josef
    A novel 3-D integrated RTD-HFET frequency multiplier
    In: International Conference on Indium Phosphide and Related Materials 1997: Conference Proceedings / IPRM`97; Cape Cod, USA; 11-15 May 1997. Piscataway: IEEE, 1997, pp. 373
    DOI, Online Full Text
  • Prost, Werner; Auer, Uwe; Velling, Peter; Janßen, Guido; Agethen, Michael; Haase, M.; Reuter, Ralf; Lakner, Hubert; Tegude, Franz-Josef
    Novel Monolithic RTD/3-Terminal Device Combinations on s.i. InP for Frequency Multiplication
    In: Proceedings of the State-of-the-Art Program of Compound Semiconductors / SOTAPOCS 1997, Montreal, Canada, 04.05.1997 - 09.05.1997, 1997, pp. 229 – 241
  • Alles, M.; Auer, Uwe; Tegude, Franz-Josef; Jäger, Dieter
    Millimeterwave Photodetectors
    Conference and Exhibition on Microwaves, Radio Communication and Electromagnetic Compatibility; MIOP 1997; Sindelfingen, Germany; 22.04.1997 - 24.04.1997,
    Sindelfingen, Germany, 1997
  • Agethen, Michael; Reuter, Ralf; van Waasen, Stefan; Brockerhoff, Wolfgang; Tegude, Franz-Josef
    Theory of Evolution : New Optimization Strategies for the Modeling of HFET-RF-Noise-Parameters
    Conference and Exhibition on Microwaves, Radio Communication and Electromagnetic Compatibility; MIOP 1997; Sindelfingen, Germany; 22.04.1997 - 24.04.1997,
    Sindelfingen, Germany, 1997
  • Reuter, Ralf; Agethen, Michael; Breder, T.; van Waasen, Stefan; Brockerhoff, Wolfgang; Tegude, Franz-Josef
    A New RF- and Noise Model with Special Emphasis on Impact Ionization for HFET
    Conference and Exhibition on Microwaves, Radio Communication and Electromagnetic Compatibility; MIOP 1997; Sindelfingen, Germany; 22.04.1997 - 24.04.1997,
    Sindelfingen, Germany, 1997
  • Daumann, Walter; Scheffer, F.; Prost, Werner; Tegude, Franz-Josef
    High power InAlAs/InGaAs/InP-HFET grown by MOVPE
    In: International Conference on Indium Phosphide and Related Materials 1997: Conference Proceedings / IPRM`97; Cape Cod, USA; 11-15 May 1997. Piscataway: IEEE, 1997, pp. 24 – 27
    DOI, Online Full Text
  • Reuter, Ralf; Agethen, Michael; Auer, Uwe; van Waasen, Stefan; Peters, Dirk; Brockerhoff, Wolfgang
    Investigation and modeling of impact lonization with regard to the RF and noise behavior of HFET
    In: IEEE Transactions on Microwave Theory and Techniques, Vol. 45, 1997, Nr. 6, pp. 977 – 983
    DOI, Online Full Text
  • Liu, Q.; Prost, Werner; Tegude, Franz-Josef
    Investigation of growth temperature dependent GaInP ordering in different crystal planes using X-ray diffraction and photoluminescence
    3rd International Workshop on Expert Evaluation & Control of Compound Semicond. Mat. & Technologies (EXMATEC), Freiburg, Germany, 12.05.1996 - 15.05.1996,
    In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 44, 1997, Nr. 1-3, pp. 91 – 95
    DOI
  • Alles, M.; Auer, U.; Tegude, Franz-Josef; Jäger, Dieter
    Millimeterwave Photodetectors, Microwaves and Optronics
    In: Mikrowellen und Optronik: Kongreßunterlagen / MIOP ’97, 9. Kongreßmesse für Hochfrequenztechnik, Funkkommunikation und elelektromagnetische Verträglichkeit, 22. - 24. April 1997, Sindelfingen, Deutschland. Sindelfingen, Germany; Hagenburg: NETWORK GmbH, 1997
  • Brennemann, Andreas; Prost, Werner; Liu, Q.; Auer, Uwe; Tegude, Franz-Josef
    Modelling intermixing of short period strained layer superlattices by means of X-ray diffraction analysis
    3rd International Workshop on Expert Evaluation & Control of Compound Semicond. Mat. & Technologies (EXMATEC), Freiburg, Germany, 12.05.1996 - 15.05.1996,
    In: Materials Science and Engineering B, Vol. 44, 1997, Nr. 1-3, pp. 87 – 90
    DOI
  • Liu, Q.; Prost, Werner; Brennemann, Andreas; Auer, Uwe; Tegude, Franz-Josef
    Modelling imperfections of epitaxial heterostructures by means of X-ray diffraction analysis
    3rd European Symposium on X-Ray Topography and High Resolution Diffraction (X-TOP), 22.04.1996 - 24.04.1996, Parma, Italy,
    In: Il Nuovo Cimento della Società Italiana di Fisica D, Vol. 19, 1997, Nr. 2-4, pp. 299 – 304
    DOI
  • Lindner, A.; Velling, Peter; Prost, Werner; Wiersch, A.; Kuphal, Eckart; Burchard, A.; Magerle, Robert; Deicher, Manfred; Tegude, Franz-Josef
    The role of hydrogen in low-temperature MOVPE growth and carbon doping of In₀.₅₃Ga₀.₄₇As for InP-based HBT
    8th International Conference on Metalorganic Vapour Phase Epitaxy (MOVPE) (IC MOVPE), Cardiff, U.K., 09.06.1996 - 13.06.1996,
    In: Journal of Crystal Growth, Vol. 170, 1997, Nr. 1-4, pp. 287 – 291
    DOI
  • Prost, Werner; Kruis, Frank Einar; Otten, Frank; Rellinghaus, B.; Auer, Uwe; Peled, A.
    Monodisperse Aerosol Particle Deposition : Prospects for Nanoelectronics
    In: Micro-and-Nano-Engineering: Book of Abstracts / Micro-and-Nano-Engineering, Athen, September 15-18, 1997, 1997
  • van Waasen, Stefan; Janßen, Guido; Bertenburg, Ralf M.; Reuter, Ralf; Auer, Uwe; Agethen, Michael; Tegude, Franz-Josef
    Traveling Wave Amplifier for 20Gb/s Optoelectronic Receivers Based on InAlAs/InGaAs/InP-HFET
    In: Proceedings of the Conference and Exhibition on Microwaves, Radio Communication and Electromagnetic Compatibility / MIOP 1997; Sindelfingen, Germany; 22.04.1997 - 24.04.1997, 1997, pp. 264 – 268

    • 1996

  • Bertenburg, Ralf M.; Janßen, Guido; van Waasen, Stefan; Auer, Uwe; Reuter, Ralf; Fritzsche, D.; Tegude, Franz-Josef
    10 Gb/s low-noise transimpedance amplifier for optoelectronic receivers based on InAlAs/InGaAs/InP HEMTs
    In: International Symposium on Electron Devices for Microwave and Optoelectronic Applications / EDMO 1996; Leeds, UK; 25 - 26 November 1996. Piscataway: IEEE, 1996, pp. 575800
    DOI, Online Full Text
  • Umbach, Andreas; van Waasen, Stefan; Auer, Uwe; Bach, Heintz Gunter; Bertenburg, Ralf M.; Breuer, V.; Ebert, Wilhelm; Janßen, Guido; Mekonnen, Gebre Giorgis; Passenberg, Wolfgang; Schlaak, Wolfgang; Schramm, Carsten; Seeger, Angela; Tegude, Franz-Josef; Unterbörsch, Günter
    Monolithic pin-HEMT 1.55μm photoreceiver on InP with 27GHz bandwidth
    In: Electronics Letters, Vol. 32, 1996, Nr. 23, pp. 2142 – 2143
    DOI
  • Auer, Uwe; Prost, Werner; Janßen, Guido; Agethen, Michael; Reuter, Ralf; Tegude, Franz-Josef
    A novel 3-D integrated HFET/RTD frequency multiplier
    In: IEEE Journal of Selected Topics in Quantum Electronics (J-STQE), Vol. 2, 1996, Nr. 3, pp. 650 – 653
    DOI, Online Full Text
  • Meneghesso, Gaudenzio; Manfredi, Manfredo; Pavesi, Maura; Auer, Uwe; Ellrodt, P.; Prost, Werner; Tegude, Franz-Josef; Canali, Claudio; Zanoni, Enrico
    Anomalous impact-ionization gate current in high breakdown InP-based HEMT's
    In: Proceedings of the 26th European Solid-State Device Research Conference / ESSDERC 1996; Bologna, Italy; 9 - 11 September 1996. Washington: IEEE Computer Society, 1996, pp. 1001 – 1004
    Online Full Text
  • Bach, Heintz Gunter; Bertenburg, Ralf M.; Bogner, Werner; Gottwald, Erich; Jacumeit, Gerald; Mekonnen, Gebre Giorgis; Umbach, Andreas; Unterboersch, Guenter; van Waasen, Stefan
    20 Gbit/s InP-based photoreceiver module: application in nonrepeatered TDM system with 198 km DSF
    In: Proceedings of the 22nd European Conference on Optical Communication / ECOC`96; Oslo, Norway; 15 - 19 September 1996. Piscataway: IEEE, 1996, pp. 5.63 – 5.66
    Online Full Text
  • van Waasen, Stefan; Umbach, Andreas; Auer, Uwe; Bach, Heintz Gunter; Bertenburg, Ralf M.; Janßen, Guido; Mekonnen, Gebre Giorgis; Passenberg, Wolfgang; Reuter, Ralf; Schlaak, Wolfgang; Schramm, Carsten; Unterboersch, G.; Wolfram, P.; Tegude, Franz-Josef
    27 GHz bandwidth high speed monolithic integrated optoelectronic photoreceiver consisting of a waveguide fed photodiode and an InAlAs/InGaAs-HFET-traveling wave amplifier
    In: Proceedings of the 18th Annual IEEE Gallium Arsenide Integrated Circuit Symposium / Orlando, USA; 3 - 6 November 1996. Piscataway: IEEE, 1996, pp. 258 – 261
  • Umbach, A.; Passenberg, W.; Unterborsch, G.; Mekonnen, G.G.; Schlaak, W.; Schramm, C.; Ebert, W.; Wolfram, P.; Bach, H.-G.; van Waasen, Stefan; Bertenburg, Ralf M.; Janssen, G.; Reuter, R.; Auer, Uwe; Tegude, Franz-Josef
    27 GHz bandwidth integrated photoreceiver comprising a waveguide fed photodiode and a GaInAs/AlInAs-HEMT based travelling wave amplifier
    In: Proceedings of the 54th Annual Device Research Conference Digest / Santa Barbara, USA; 26-26 June 1996. Piscataway: IEEE, 1996, pp. 200 – 201
    DOI, Online Full Text
  • Tegude, Franz-Josef; Lindner, A.; Prost, Werner; Wiersch, A.
    On Carbon Doping of InGaAs for InP Based Heterojunction Bipolar Transistors
    20th European Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Vilnius, Litauen, 19.05.1996 - 22.05.1996,
    Vilnius, Litauen, 1996
  • Velling, Peter; Janßen, Guido; Agethen, Michael; Prost, Werner; Auer, Uwe; Reuter, Ralf; Tegude, Franz-Josef
    On the design and modelling of novel 3-D integrated RTD/HBT device frequency multiplier circuits
    In: Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications / EDMO 1996; Leeds, UK; 25 - 26 November 1996. Piscataway: IEEE, 1996, pp. 176 – 181
    DOI, Online Full Text
  • Reuter, Ralf; Breder, T.; Auer, Uwe; van Waasen, Stefan; Agethen, Michael; Tegude, Franz-Josef
    On the temperature dependence of the impact ionization in HFET and the corresponding RF- and noise performance
    In: 8th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / Schwaebisch Gmuend, Germany; 21.04.1996 - 25.04.1996. Piscataway: IEEE, 1996, pp. 654 – 657
    DOI, Online Full Text
  • Umbach, A.; van Waasen, Stefan; Bach, H.; Bertenburg, Ralf M.; Janßen, Guido; Mekonnen, G.G.; Passenberg, W.; Schlaak, W.; Schramm, C.; Unterbörsch, G.; Wolfram, P.; Tegude, Franz-Josef
    High-Speed Photoreceiver by Monolithic Integration of a Waveguide Fed Photodiode and a GaInAs/AlInAs-HEMT Based Distributed Amplifer
    8th International Conference on InP and Related Materials (IPRM), Schwaebisch Gmuend, Germany, 21.04.1996 - 25.04.1996,
    Schwaebisch Gmuend, Germany, 1996
  • van Waasen, Stefan; Janßen, Guido; Bertenburg, Ralf M.; Reuter, Ralf; Tegude, Franz-Josef
    Development of a low-impedance traveling wave amplifier based on InAlAs/InGaAs/InP-HFET for 20 Gb/s optoelectronic receivers
    In: 8th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / Schwaebisch Gmuend, Germany; 21.04.1996 - 25.04.1996. Piscataway: IEEE, 1996, pp. 642 – 645
    DOI, Online Full Text
  • Daumann, Walter; Brockerhoff, Wolfgang; Bertenburg, Ralf M.; Reuter, Ralf; Auer, Uwe; Molls, Wolfgang; Tegude, Franz-Josef
    On the advantages of InAlAs/InGaAs/InP dual-gate-HFET's in comparison to conventional single-gate-HFET's
    In: 8th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / Schwaebisch Gmuend, Germany; 21.04.1996 - 25.04.1996. Piscataway: IEEE, 1996, pp. 462 – 465
    DOI, Online Full Text
  • Auer, Uwe; Reuter, Ralf; Ellrodt, P.; Prost, Werner; Tegude, Franz-Josef
    Characterization and analysis of a new gate leakage mechanism at high drain bias in InAlAs/InGaAs heterostructure field-effect transistors
    In: 8th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / Schwaebisch Gmuend, Germany; 21.04.1996 - 25.04.1996. Piscataway: IEEE, 1996, pp. 650 – 653
    DOI, Online Full Text
  • Prost, Werner; Auer, Uwe; Janßen, Guido; Reuter, Ralf; Agethen, Michael; Tegude, Franz-Josef
    Merged Heterostructure FET/RTD Combination for (Sub-)Millimeter-Wave Generation
    4th International Workshop on Terahertz Electronics; Erlangen, Germany; 05.09.1996 - 06.09.1996,
    Erlangen, Germany, 1996
  • Bach, Heintz Gunter; Umbach, Andreas; Unterboersch, Guenter; Passenberg, Wolfgang; Mekonnen, Gebre Giorgis; Schlaak, Wolfgang; Schramm, Carsten; Ebert, Wilhelm; Wolfram, Peter; van Waasen, Stefan; Bertenburg, Ralf M.; Janßen, Guido; Reuter, Ralf; Auer, Uwe; Tegude, Franz-Josef
    Ultrafast GaInAs/AlInAs/InP photoreceiver based on waveguide architecture
    In: Proceedings of the 22nd European Conference on Optical Communication / ECOC`96; Oslo, Norway; 15 - 19 September 1996. Piscataway: IEEE, 1996, pp. 1.133 – 1.136
    Online Full Text
  • Reuter, R.; Agethen, Michael; Auer, Uwe; van Waasen, Stefan; Peters, D.; Brockerhoff, Wolfgang; Tegude, Franz-Josef
    Investigation and modeling of impact ionization with regard to the RF- and noise behaviour of HFET
    In: Proceedings of the 1996 IEEE MTT-S International Microwave Symposium Digest / San Franscisco, USA; 17 - 21 June 1996. Piscataway: IEEE, 1996, pp. 512178
    DOI, Online Full Text
  • Liu, Q.; Brennemann, Andreas; Hardtdegen, H.; Lindner, A.; Prost, Werner; Tegude, Franz-Josef
    Characterization of hydrogen passivation and carbon self-compensation of highly C-doped GaAs by means of x-ray diffraction
    In: Journal of Applied Physics, Vol. 79, 1996, Nr. 2, pp. 710 – 716
    DOI
  • Prost, Werner
    Plasma-CVD für Siliziumnitrid auf III-V Halbleitern
    MOCVD- und Plasma-CVD Prozesse für opto- und mikroelektronische Anwendungen; Aachen, Germany; 05.11.1996,
    Aachen, Germany, 1996
  • Bach, Heintz Gunter; Umbach, Andreas; van Waasen, Stefan; Bertenburg, Ralf M.; Unterbörsch, Günter
    Ultrafast monolithically integrated InP-based photoreceiver : OEIC-design, fabrication, and system application
    In: IEEE Journal of Selected Topics in Quantum Electronics (J-STQE), Vol. 2, 1996, Nr. 2, pp. 418 – 423
    DOI, Online Full Text
  • Boehm, Christoph; Otterbeck, Markus; Lipp, Stephan; Frey, L.; Reuter, Ralf; Leyk, A.; Mertin, Wolfgang; Tegude, Franz-Josef; Kubalek, Erich
    Design and characterization of integrated probes for millimeter wave applications in scanning probe microscopy
    In: Proceedings of the 1996 IEEE MTT-S International Microwave Symposium Digest / San Franscisco, USA; 17 - 21 June 1996. Piscataway: IEEE, 1996, pp. 1529 – 1532
    DOI, Online Full Text
  • Daumann, W.; Reuter, R.; Agethen, Michael; Auer, Uwe; Brockerhoff, Wolfgang; Bertenburg, Ralf M.; Tegude, Franz-Josef
    Fabrication and High Frequency Analysis of InAlAs/InGaAs/InP Dual-Gate-HFETs with Special Emphasis to Impact Ionization
    European Heterostructure Technology Workshop (HETECH); Lille, France; 15.09.1996 - 17.09.1996,
    Lille, France, 1996
  • Liu, Q.; Derksen, S.; Prost, Werner; Lindner, A.; Tegude, Franz-Josef
    Growth temperature dependent band alignment at the Ga₀.₅₁In₀.₄₉P to GaAs heterointerfaces
    In: Journal of Applied Physics, Vol. 79, 1996, Nr. 1, pp. 305 – 309
    DOI
  • Daumann, Walter; Ellrodt, P.; Brockerhoff, Wolfgang; Bertenburg, Ralf M.; Reuter, Ralf; Auer, Uwe; Molls, Wolfgang; Tegude, Franz-Josef
    InAlAs/InGaAs/InP HFET with suppressed impact ionization using dual-gate cascode-devices
    In: IEEE Electron Device Letters, Vol. 17, 1996, Nr. 10, pp. 488 – 490
    DOI, Online Full Text
  • Janßen, G.; Prost, Werner; Reuter, Ralf; Auer, Uwe; Schroeder, W.; Tegude, Franz-Josef
    Modeling the Potential of Novel 3-D Integrated RTD/HFET Frequency Multiplier Circuits
    International Workshop on Millimeterwaves, Orvieto, Italy, 11.04.1996 - 12.04.1996,
    Orvieto, Italy, 1996
  • Mihaila, M.; Heedt, Christian H.; Tegude, Franz-Josef
    Nonlinear effects in the 1/f noise of lattice-matched InAlAs/InGaAs HEMT’s
    In: Proceedings of the '6th Quantum 1/f Noise and other Low Frequency Fluctuations in Electronic Devices Symposium / St.Louis, USA; 27.05.1994 - 28.05.1994. College Park: American Institute of Physics (AIP), 1996, pp. 127
    DOI
  • Auer, Uwe; Reuter, Ralf; Ellrodt, P.; Heedt, Christian H.; Prost, Werner; Tegude, Franz-Josef
    The impact of pseudomorphic AlAs spacer layers on the gate leakage current of InAlAs/InGaAs heterostructure field-effect transistors
    In: Microwave and Optical Technology Letters, Vol. 11, 1996, Nr. 3, pp. 125 – 128
    DOI

    • 1995

  • Ellrodt, P.; Brockerhoff, Wolfgang; Tegude, Franz-Josef
    Simulation of Gate Leakage due to Impact Ionization in InAlAs/InGaAs-HFET
    4th Int. Seminar on Simulation of Devices and Technologies (ISSDT), Kruger Nat. Park, South Africa, 15.11.1995 - 17.11.1995,
    Kruger Nat. Park, South Africa, 1995
  • Liu, Q.; Prost, Werner; Tegude, Franz-Josef
    Determination of CuPt-type ordering in GaInP by means of x-ray diffraction in the skew, symmetric arrangement
    In: Applied Physics Letters (APL), Vol. 67, 1995, pp. 2807
    DOI
  • Ellrodt, P; Brockerhoff, Wolfgang; Tegude, Franz-Josef
    Investigation of leakage current behaviour of Schottky gates on InAlAs/InGaAs/InP HFET structures by a 1D model
    In: Solid State Electronics, Vol. 38, 1995, Nr. 10, pp. 1775 – 1780
    DOI
  • Lindner, A.; Prost, Werner; Wiersch, A.; Liu, Q.; Scheffer, F.; Kuphal, E.; Tegude, Franz-Josef
    Carbon-Doping of MOVPE-Grown LT-In0.53Ga0.47As : On the Doping Mechanism and InGaAs/InP HBT Device Characteristics
    European Workshop on MOVPE and Rel. Growth Techniques (EW MOVPE), Gent, Belgium, 25.06.1995 - 28.06.1995',
    Gent, Belgium, 1995
  • Wiersch, A.; Heedt, Christian H.; Schneiders, S.; Tilders, R.; Buchali, F.; Kuebart, Wolfgang; Prost, Werner; Tegude, Franz-Josef
    Room-temperature deposition of SiNx using ECR-PECVD for III/V semiconductor microelectronics in lift-off technique
    In: Journal of Non-Crystalline Solids, Vol. 187, 1995, pp. 334 – 339
    DOI
  • Reuter, Ralf; van Waasen, Stefan; Peters, D.; Tegude, Franz-Josef
    Ein Temperaturrauschmodell für HFET mit besonderer Berücksichtigung des Einflusses eines Gate-Leckstroms auf das Rauschverhalten
    Conference and Exhibition on Microwaves, Radio Communication and Electromagnetic Compatibility (MIOP), Sindelfingen, Germany, 30.05.1995 - 01.06.1995,
    Sindelfingen, Germany, 1995
  • Mihaila, Mihai N.; Heedt, Christian H.; Tegude, Franz-Josef
    Relaxation mechanisms in 2D electron gas and origin of 1/f noise in HEMT's
    In: Proceedings of the 20th International Conference on Microelectronics: Volume 1 / Nis, Serbia; 12- 14 September 1995. Piscataway: IEEE, 1995, pp. 447 – 452
    Online Full Text, DOI
  • Bertenburg, Ralf M.; Janssen, G.; van Waasen, Stefan; Reuter, Ralf; Tegude, Franz-Josef
    On the applicability of the transimpedance amplifier concept for 40 Gb/s optoelectronic receivers based on InAlAs/InGaAs heterostructure field effect transistors
    In: Proceedings of ISSE'95 - International Symposium on Signals, Systems and Electronics / 25-27 Oct. 1995; San Francisco, USA. Piscataway: IEEE, 1995, pp. 497971
    DOI, Online Full Text
  • Bertenburg, Ralf M.; Clement, A.; Tegude, Franz-Josef
    40Gb/s optoelektronische Empfänger höchster Empfindlichkeit mit konzentrierten Photo-detektoren und Wanderwellenverstärkern : Designüberlegungen und Entwicklung
    Conference and Exhibition on Microwaves, Radio Communication and Electromagnetic Compatibility (MIOP), Sindelfingen, Germany, 30.05.1995 - 01.06.1995,
    Sindelfingen, Germany, 1995
  • Burchard, A.; Deicher, Manfred; Forkel-Wirth, Doris; Freidinger, J.; Kerle, T.; Magerle, Robert; Pfeiffer, W.; Prost, Werner; Wellmann, Peter J.; Winnacker, Albrecht
    Acceptor-hydrogen interaction in ternary III-V semiconductors
    18th International Conference on Defects in Semiconductors; Sendai, Japan; 23 - 28 July 1995,
    In: Materials Science Forum (MSF), Vol. 196-201, 1995, Nr. 2, pp. 987 – 992
    DOI
  • Lakner, Hubert; Stammen, Jörg; Liu, Q.; Prost, Werner
    Characterization of Highly Strained GaxIn1-xP/InP Interfaces (x = 0.5)
    9th Conference on Microscopy of Semiconductor Materials, Oxford, U.K., 20.03.1995 - 23.03.1995,
    Oxford, U.K., 1995
  • Bertenburg, Ralf M.; Janßen, G.; Heedt, Christian H.; Grzona, P.; Reuter, Ralf; Fritzsche, D.; Tegude, Franz-Josef
    Entwicklung eines optoelektronischen Empfängers nach dem Transimpedanzverstärker-prinzip für Bitraten von 500MB/s bis 2,5GB/s und hoher Empfindlichkeit
    Conference and Exhibition on Microwaves, Radio Communication and Electromagnetic Compatibility (MIOP), Sindelfingen, Germany, 30.05.1995 - 01.06.1995,
    Sindelfingen, Germany, 1995
  • Engels, M.; Jansen, Rolf H.; Daumann, Walter; Bertenburg, Ralf M.; Tegude, Franz-Josef
    Design methodology, measurement and application of MMIC transmission line transformers
    In: Proceedings of IEEE MTT-S International Microwave Symposium Digest: Part 1 / Orlando, USA; 16 -20 May 1995. Piscataway: IEEE, 1995, pp. 1635 – 1638
    DOI, Online Full Text
  • Auer, Uwe; Reuter, Ralf; Ellrodt, P.; Heedt, Christian H.; Prost, Werner; Tegude, Franz-Josef
    Impact of pseudomorphic AlAs spacer layers on the gate leakage current of InAlAs/InGaAs heterostructure field-effect transistors
    In: 7th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / Sapporo, Japan; 9 - 13 May 1995. Piscataway: IEEE, 1995, pp. 424 – 427
    Online Full Text
  • Reuter, Ralf; van Waasen, Stefan; Tegude, Franz-Josef
    A New Noise Model of HFET with Special Emphasis on Gate-Leakage
    In: IEEE Electron Device Letters, Vol. 16, 1995, Nr. 2, pp. 74 – 76
    DOI, Online Full Text
  • Prost, Werner; Tegude, Franz-Josef
    High speed, high gain InP-based heterostructure FETs with high breakdown voltage and low leakage
    In: 7th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / Sapporo, Japan; 9 - 13 May 1995. Piscataway: IEEE, 1995, pp. 729 – 732
    Online Full Text
  • Prost, Werner; Scheffer, F.; Liu, Q.; Lindner, A.; Lakner, Hubert; Gyuro, I.; Tegude, Franz-Josef
    Metalorganic vapor phase epitaxial grown heterointerfaces to GaInP with group-III and group-V exchange
    In: Journal of Crystal Growth, Vol. 146, 1995, Nr. 1-4, pp. 538 – 543
    DOI
  • Peters, D.; Daumann, W.; Brockerhoff, Wolfgang; Reuter, Ralf; Koenig, E.; Tegude, Franz-Josef
    New Direct Parameter Extraction Technique for Heterojunction Bipolar Transistors Using an Extended Equivalent Circuit
    International Workshop on Semiconductor Characterization, Gaithersburg, USA, 30.01.1995 - 02.02.1995,
    Gaithersburg, USA, 1995
  • David, Gerhard; Bussek, Peter; Auer, Uwe; Tegude, Franz-Josef; Jäger, Dieter
    Electro-optic probing of RF signals in submicrometre MMIC devices
    In: Electronics Letters, Vol. 31, 1995, Nr. 25, pp. 2188 – 2189
    DOI
  • Liu, Q.; Derksen, S.; Lindner, A.; Scheffer, F.; Prost, Werner; Tegude, Franz-Josef
    Evidence of type-II band alignment at the ordered GaInP to GaAs heterointerface
    In: Journal of Applied Physics, Vol. 77, 1995, Nr. 3, pp. 1154 – 1158
    DOI
  • Auer, Uwe; Reuter, Ralf; Heedt, Christian H.; Prost, Werner; Tegude, Franz-Josef
    InP-based heterostructure field-effect transistors with high-quality short-period (InAs)₃m/(GaAs)₁m superlattice channel layers
    8th Int. Conf. on Molecular Beam Epitaxy (MBE) (IC MBE), Osaka, Japan, 29.08.1994 - 02.09.1994,
    In: Journal of Crystal Growth, Vol. 150, 1995, pp. 1225 – 1229
    DOI

    • 1994

  • Mihaila, M.; Heedt, Christian H.; Scheffer, F.; Tegude, Franz-Josef
    Phonon-Induced 1/f Noise in InAlAs/InGaAs HEMTs
    17th International Semiconductor Conference (CAS), Sinaia, Romania, 11.10.1994 - 16.10.1994,
    Sinaia, Romania, 1994
  • Abdo-Tuko, Mohammed; Bertenburg, Ralf M.; Wolff, Ingo
    A Balanced Ka-Band GaAs FET MMIC Frequency Doubler
    In: IEEE Microwave and Guided Wave Letters, Vol. 4, 1994, Nr. 7, pp. 217 – 219
    DOI, Online Full Text
  • Dickmann, Jürgen; Daembkes, Heinrich; Schildberg, Steffen; Fittng, Hans-Joachim; Ellrod, Peter; Joseph, Franz
    Analytical model to determine the gate leakage current in i n ₀.₅₂ a l ₀.₄₈ As/In ₓ Ga₁₋ₓ a s pseudomorphic modulation doped field-effect transistors caused by thermionic field emission
    In: Japanese Journal of Applied Physics (JJAP), Vol. 33, 1994, Nr. 4R, pp. 1735 – 1739
    DOI
  • Fritzsche, Dieter; Nickel, Heinrich; Lösch, Rainer; Schlapp, Winfried; Tegude, Franz-Josef
    Drastic Reduction of Gate Leakage in InAlAs/InGaAs HEMT’s Using a Pseudomorphic InAlAs Hole Barrier Layer
    In: IEEE Transactions on Electron Devices (T-ED), Vol. 41, 1994, Nr. 10, pp. 1685 – 1690
    DOI, Online Full Text
  • Lindner, A.; Liu, Q.; Scheffer, F.; Haase, M.; Prost, Werner; Tegude, Franz-Josef
    Low-pressure metalorganic vapour phase epitaxy growth of InAs/GaAs short period superlattices on InP substrates
    7th Int. Conf. on Metalorganic Vapour Phase Epitaxy (MOVPE) (IC MOVPE), Yokohama, Japan, 31.05.1994 - 03.06.1994,
    In: Journal of Crystal Growth, Vol. 145, 1994, Nr. 1-4, pp. 771 – 777
    DOI
  • Scheffer, F.; Lindner, A.; Liu, Q.; Heedt, Christian H.; Reuter, Ralf; Prost, Werner; Lakner, Hubert; Tegude, Franz-Josef
    Highly strained In₀.₅Ga₀.₅P as wide-gap material on InP substrate for heterojunction field effect transistor application
    In: Journal of Crystal Growth, Vol. 145, 1994, Nr. 1-4, pp. 326 – 331
    DOI
  • Liu, Q.; Scheffer, F.; Lindner, A.; Lakner, Hubert; Prost, Werner; Tegude, Franz-Josef
    X-ray characterization of very thin GaₓIn₁₋ₓP (x ≈ 0.5) layers grown on InP
    Int. Workshop on Expert Evaluation & Control of Compound Semicond. Mat. & Technologies (EXMATEC), Parma, Italy, 18.05.1994 - 20.05.1994,
    In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 28, 1994, Nr. 1-3, pp. 188 – 192
    DOI
  • Schroeder, W.; Borkes, J.; Bertenburg, Ralf M.; Wolff, I.
    Boundary-integral evaluation analysis of a novel monolithic CPW/TFMS 3-dB quadrature hybrid
    In: 1994 IEEE MTT-S International Microwave Symposium Digest (Cat. No.94CH3389-4) / San Diego, USA; 23-27 May 1994, 1994
    DOI, Online Full Text
  • Auer, Uwe; Reuter, Ralf; Heedt, Christian H.; Künzel, Harald M.; Prost, Werner; Tegude, Franz-Josef
    InAlAs/InGaAs HFET with extremely high device breakdown using an optimized buffer layer structure
    In: 6th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / Santa Barbara, USA; 27 - 31 March 1994. Piscataway: IEEE, 1994, pp. 443 – 446
    DOI, Online Full Text
  • Lindner, A.; Liu, Q.; Scheffer, F.; Prost, Werner; Tegude, Franz-Josef
    Low-pressure metallorganic vapor phase epitaxy (LP-MOVPE) growth and characterization of short-period strained-layer superlattices (SPSLSs) on InP substrates
    In: Epitaxial Growth Processes / Los Angeles, USA; 26 - 27 January 1994. Bellingham: SPIE, 1994, pp. 75 – 83
  • Liu, Q.; Lindner, A.; Scheffer, F.; Prost, Werner; Tegude, Franz-Josef
    X-ray diffraction characterization of highly strained InAs and GaAs layers on InP grown by metalorganic vapor-phase epitaxy
    In: Journal of Applied Physics, Vol. 75, 1994, Nr. 5, pp. 2426 – 2433
    DOI (Open Access)
  • Lindner, A.; Liu, Q.; Scheffer, F.; Prost, Werner; Tegude, Franz-Josef
    Realization of highly strained short period InAs/GaAs superlattices by means of LP-MOVPE growth on InP substrates
    In: 6th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / Santa Barbara, USA; 27 - 31 March 1994. Piscataway: IEEE, 1994, pp. 579 – 580
    Online Full Text
  • Scheffer, F.; Heedt, Christian H.; Reuter, Ralf; Lindner, A.; Liu, Q.; Prost, Werner; Tegude, Franz-Josef
    High breakdown voltage InGaAs/lnAIAs HFET using ln₀.₅Ga₀.₅P spacer layer
    In: Electronics Letters, Vol. 30, 1994, Nr. 2, pp. 169 – 170
    DOI
  • Scheffer, F.; Lindner, A.; Heedt, Christian H.; Reuter, Ralf; Liu, Q.; Prost, Werner; Tegude, Franz-Josef
    In₀.₅Ga₀.₅ spacer layer for high drain breakdown voltage InGaAs/InAlAs HFET on InP grown by MOVPE
    In: 6th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / Santa Barbara, USA; 27 - 31 March 1994. Piscataway: IEEE, 1994, pp. 439 – 442
  • Redlich, S.; Kremer, R.; Neubauer, A.; Bollig, B.; Liu, Q.; Kubalek, Erich; Tegude, Franz-Josef; Laws, P.; Jäger, Dieter
    InAlAs/InGaAs Heterostrukturen auf InP zur Realisierung optisch steuerbarer Höchstfrequenzleitungen
    9. Treffen des DGKK Arbeitskreises "Epitaxie von III/V-Halbleitern", Duisburg, Dezember 1994,
    1994
  • Mertin, Wolfgang; Leyk, A.; David, Gerhard; Bertenburg, Ralf M.; Koßlowski, Stefan; Wolff, Ingo; Jäger, Dieter; Kubalek, Erich
    Two-dimensional mapping of amplitude and phase of microwave fields inside a MMIC using the direct electro-optic sampling technique
    In: Proceedings of the IEEE MTT-S International Microwave Symposium Digest / San Diego, USA; 23-27 May 1994. Piscataway: IEEE, Vol. 3, 1994, pp. 1597 – 1600
    Online Full Text, DOI
  • Jäger, Dieter; Zumkley, S.; Wingen, G.; Auer, Uwe; Tegude, Franz-Josef
    40 GHz Vertical Electrooptical Fabry-Perot Modulator with Schottky contacts
    CLEO/EUROPE `94, Amsterdam, Niederlande, 1994,
    1994

    • 1993

  • Ellrodt, P.; Brockerhoff, Wolfgang; Heedt, C.; Tegude, Franz-Josef
    Numerical investigation of leakage current of Schottky contacts on InAlAs/InGaAs/InP heterostructures
    In: Proceedings of the 23rd European Solid State Device Research Conference / ESSDERC '93; Grenoble, France; 13 - 16 September 1993. Piscataway: IEEE Computer Society, 1993, pp. 463 – 466
    Online Full Text
  • Prost, Werner; Heedt, C.; Scheffer, F.; Lindner, A.; Reuter, R.; Tegude, Franz-Josef
    Pseudomorphic Ga0.5In0.5P barriers grown by MOVPE for high drain breakdown and low leakage HFET on InP
    In: Proceedings of the '20th International Symposium on GaAs and Related Compounds / GaAs RC´93; Freiburg, Germany; 29.08.1993 - 02.09.1993, 1993, pp. 827 – 828
  • Lindner, A.; Scheffer, F.; Liu, Q.; Prost, Werner; Tegude, Franz-Josef
    LP-growth and characterization of short-period strained-layer superlattices (SPSLSs) on InP substrates
    5th European Workshop on MOVPE and Rel. Growth Techniques (EW MOVPE), Malmö, Sweden, 02.06.1993 - 04.06.1993,
    Malmö, Sweden, 1993
  • Künzel, Harald M.; Böttcher, J.; Gibis, R.; Hoenow, H.; Heedt, Christian H.
    Low-temperature MBE of AlGaInAs lattice-matched to InP
    In: Journal of Crystal Growth, Vol. 127, 1993, Nr. 1-4, pp. 519 – 522
    DOI
  • Kremer, R.; David, G.; Redlich, S.; Dragoman, M.; Buchali, F.; Tegude, Franz-Josef; Jäger, Dieter
    A High Speed MSM-Travelling-Wave Photodetector for InP-Based MMICs
    In: Mikrowellen und Optronik: Kongreßunterlagen / MIOP '93, Mikrowellen und Optronik, 7. Kongressmesse für Höchstfrequenztechnik, 25. - 27. Mai 1993, Sindelfingen, Deutschland. Hagenburg: NETWORK GmbH, 1993, pp. 271 – 275
  • Peters, D.; Brockerhoff, Wolfgang; Reuter, R.; Meschede, H.; Wiersch, A.; Becker, B.; Daumann, W.; Seiler, U.; König, U.; Tegude, Franz-Josef
    RF-Characterization of AlGaAs/GaAs HBT Down to 20K
    In: Proceedings of the '20th International Symposium on GaAs and Related Compounds / GaAs RC´93; Freiburg, Germany; 29.08.1993 - 02.09.1993, 1993, pp. 177 – 182
  • Liu, Q.; Lakner, Hubert; Scheffer, F.; Lindner, A.; Prost, Werner
    Analysis of ordering in GaInP by means of x-ray diffraction
    In: Journal of Applied Physics, Vol. 73, 1993, Nr. 6, pp. 2770 – 2774
    DOI
  • Heedt, C.; Buchali, F.; Prost, Werner; Tegude, Franz-Josef; Fritzsche, D.; Nickel, H.
    Characterization of Impact-Ionization in InAlAs/InGaAs/InP HEMT Structures using a Novel Photocurrent-Measurement Technique
    In: Proceedings of the '5th International Conference on InP and Related Materials / IPRM´93; Paris, France; 19.04.1993 - 22.04.1993, 1993, pp. 243 – 250
  • Tegude, Franz-Josef
    Heterostructures for III-V Microwave Fieldeffect- and Bipolartransistors
    In: Proceedings of the '16th International Semiconductor Conference / CAS´93; Sinaia, Romania; 12.10.1993 - 17.10.1993, 1993, pp. 11 – 18
  • Liu, Q.; Quedeweit, U.; Scheffer, F.; Lindner, A.; Prost, Werner; Tegude, Franz-Josef
    Effects of deep levels and Si-doping on GaInP material properties investigated by means of optical methods
    European Materials Research Conference (E-MRS), Strasbourg, France, 04.05.1993 - 07.05.1993,
    In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 21, 1993, Nr. 2-3, pp. 181 – 184
    DOI
  • Porges, M.; Lalinsky, Tibor; Safrankova, Jaroslava; Hudek, Peter; Kraus, Jörg; Tegude, Franz-Josef; von Wendorff, W.C.; Jäger, Dieter
    GaAs MSM Photodiode Using the Highly Doped Channel Layer of a Heterostructure MESFET
    In: Physica Status Solidi (A): Applications and Materials Science, Vol. 136, 1993, Nr. 1, pp. K65 – K69
    DOI
  • David, Gerhard; Redlich, Stefan; Mertin, Wolfgang; Bertenburg, Ralf M.; Koblowski, S.; Tegude, Franz-Josef; Kubalek, Erich; Jäger, Dieter
    Two-dimensional direct electra-optic field mapping in a monolithic integrated GaAs amplifier
    In: 23rd European Microwave Conference / EuMA 1993; Madrid, Spain; 6 - 10 September 1993. Piscataway: IEEE, 1993, pp. 497 – 499
    DOI, Online Full Text
  • Peters, D.; Brockerhoff, Wolfgang; Reuter, R.; Meschede, H.; Wiersch, A.; Becker, B.; Daumann, W.; Seiler, U.; König, U.; Tegude, Franz-Josef
    Investigation of the High-Frequency Performance of AlGaAs/GaAs HBTs Down to 20K
    In: Proceedings of Bipolar/BiCMOS Circuits and Technology Meeting / BCTM´93; Minenapolis, USA; 04.10.1993 - 05.10.1993, 1993, pp. 32 – 35
  • Künzel, Harald M.; Böttcher, J.; Hase, Andreas; Heedt, Christian H.; Hoenow, H.
    Low temperature molecular beam epitaxy of Al(Ga)InAs on InP and its application to high electron mobility transistor structures
    In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 22, 1993, Nr. 1, pp. 89 – 92
    DOI
  • Lakner, Hubert; Bollig, B.; Volmich, P.; Liu, Q.; Scheffer, F.; Lindner, A.; Prost, Werner
    High-Resolution STEM-Z-Contrast Imaging and XRD : Two New Approaches for the Characterization of GaInP/GaAs-Heterostructures
    In: Proceedings of the '8th Conference on Microscopy of Semiconductor Materials / Oxford, U.K.; 05.04.1993 - 08.04.1993, 1993, pp. 497 – 502
  • Kraus, Jörg; Meschede, Herbert; Liu, Q.; Prost, Werner; Tegude, Franz-Josef; Lakner, Hubert; Kubalek, Erich
    InyGa1-yAs⧸GaAs interface smoothing by GaAs monolayers in highly strained graded superlattice channels (0.2 ≤ y ≤ 0.4) for pseudomorphic AlxGa1-xAs⧸InyGa1-yAs HFET
    In: Journal of Crystal Growth, Vol. 127, 1993, Nr. 1-4, pp. 589 – 591
    DOI
  • David, G.; Redlich, S.; Mertin, Wolfgang; Bertenburg, Ralf M.; Koßlowski, S.; Tegude, Franz-Josef; Kubalek, Erich; Jäger, Dieter
    Two-dimensional direct electro-optic field mapping in a monolithic integrated GaAs amplifier
    In: Proceedings of the 23rd European Microwave Conference (EuMC'93) / EuMC'93, 10. September 1993, Madrid, Spain. Madrid, 1993, pp. 497 – 499
    Online Full Text
  • Safrankova, Jaroslava; Porges, M.; Lalinsky, Tibor; Mozolova, Želmíra; Hudek, Peter; Kostic, Ivan; Kraus, Jörg; von Wendorff, W.C.; Tegude, Franz-Josef; Jäger, Dieter
    Photoelectrical properties of GaAs MSM photodetektor compatible with pseudomorphic heterostructure MESFET
    In: Physica status solidi A: Applications and Materials Science, Vol. 140, 1993, Nr. 2, pp. K111 – K114
    DOI

    • 1992

  • Scheffer, F.; Buchali, F.; Lindner, A.; Liu, Q.; Wiersch, A.; Kohl, Andreas; Prost, Werner
    Characterization of MOVPE grown GaInP as wide band gap Schottky barrier layer
    In: LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics and Smart Pixels: 4th International Conference on Indium Phosphide and Related Materials / IPRM 1992; Newport, United States; 21 - 24 April 1992. Piscataway: IEEE, 1992, pp. 538 – 541
    DOI, Online Full Text
  • Buchali, F.; Scheffer, F.; Heedt, Christian H.; Gyuro, Imre; Speier, Peter; Prost, Werner; Tegude, Franz-Josef
    Evidence of oxygen in undoped InAIAs MOVPE layers
    In: LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics and Smart Pixels: 4th International Conference on Indium Phosphide and Related Materials / IPRM 1992; Newport, United States; 21 - 24 April 1992. Piscataway: IEEE, 1992, pp. 534 – 537
    DOI, Online Full Text
  • Heedt, C.; Buchali, F.; Prost, Werner; Fritzsche, D.; Nickel, H.; Tegude, Franz-Josef
    Extremly low gate leakage InAlAs/InGaAs HEMT
    In: Proceedings of the 19th International Symposium on GaAs and Related Compounds / GaAs RC`92; Karuizawa, Japan; 28.09.1992 - 02.10.1992, 1992, pp. 941 – 942
  • Hoenow, H.; Bach, H.-G.; Böttcher, J.; Gueissaz, F.; Künzel, Harald M.; Scheffer, F.; Schramm, Carsten
    Deep level analysis of Si doped MBE grown AllnAs layers
    In: LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics and Smart Pixels: 4th International Conference on Indium Phosphide and Related Materials / IPRM 1992; Newport, United States; 21 - 24 April 1992. Piscataway: IEEE, 1992, pp. 136 – 139
    DOI, Online Full Text
  • Bode, Michael; Schubert, Jurgen; Zander, Willi; Kraus, Jörg; Peters, Dirk; Brockerhoff, Wolfgang; Tegude, Franz-Josef
    On-wafer microwave measurement setup for investigations on hemt's and high tc Superconductors at Cryogenic Temperatures Down to 20 K
    In: IEEE Transactions on Microwave Theory and Techniques, Vol. 40, 1992, Nr. 12, pp. 2325 – 2331
    DOI, Online Full Text
  • Dragoman, Mircea L.; Block, M.; Kremer, Ralf; Buchali, F.; Tegude, Franz-Josef; Jäger, Dieter
    Coplanar microwave phase shifter for InP-based MMICs
    In: Microelectronic Engineering, Vol. 19, 1992, Nr. 1-4, pp. 421 – 424
    DOI, Online Full Text
  • Dragoman, M.; Block, M.; Kremer, R.; Buchali, F.; Tegude, Franz-Josef; Jäger, Dieter
    Coplanar InAlAs/InGaAs/InP microwave delay line with optical control
    In: Proceedings of IEEE Lasers and Electro-Optics Society: Annual Meeting 1992 / LEOS '92: 16-19 Nov. 1992, Boston, MA, USA. Piscataway, NJ: IEEE, 1992, pp. 684 – 685
    DOI
  • Kraus, Jörg; Meschede, Herbert; Liu, Q.; Prost, Werner; Tegude, Franz-Josef; Lakner, Hubert; Kubalek, Erich
    InyGa₁₋yAs{plus 45 degree rule}GaAs interface smoothing by GaAs monolayers in highly strained graded superlattice channels (0.2 ≤ y ≤ 0.4) for pseudomorphic AlₓGa₁₋ₓAs{plus 45 degree rule}InyGa₁₋yAs HFET
    7th International Conference on Molecular Beam Epitaxy (MBE), Schwäbisch Gmünd, Germany, 24.08.1992 - 28.08.1992,
    Schwäbisch Gmünd, Germany, 1992
  • Scheffer, F.; Buchali, F.; Lindner, A.; Liu, Q.; Wiersch, A.; Prost, Werner
    High doping performance of lattice matched GaInP on GaAs
    In: Journal of Crystal Growth, Vol. 124, 1992, Nr. 1-4, pp. 475 – 482
    DOI
  • Dragoman, Mircea L.; Block, M.; Kremer, Ralf; Buchali, Fred; Tegude, Franz-Josef; Jäger, Dieter
    Coplanar microwave phase shifter for InP-based MMICs
    In: Proceedings of the 22nd European Solid-State Device Research Conference / ESSDERC 1992; Leuven; Belgium; 14 - 17 September 1992. Leuven; Leuven, 1992, Nr. 4, pp. 421 – 424
    Online Full Text
  • Buchali, F.; Gyuro, I.; Scheffer, F.; Prost, Werner; Block, M.; von Wendorff, W.C.; Heymann, G.; Tegude, Franz-Josef; Speier, P.; Jäger, Dieter
    Interdigitated electrode and coplanar waveguide InAlAs/InGaAs MSM photodetectors grown by LP MOVPE
    In: Proceedings of the Fourth Indium Phosphide and Related Materials Conference / 4th International Conference on Indium Phosphide and Related Materials - IPRM'92, 21.-24. April 1992, Newport, United States. Piscataway: IEEE, 1992, pp. 596 – 599
    DOI
  • Heedt, Christian H.; Gottwald, Péter; Buchali, F.; Prost, Werner; Künzel, Harald M.; Tegude, Franz-Josef
    On the optimization and reliability of ohmic-And Schottky contacts to InAlAs/InGaAs HFET
    In: LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics and Smart Pixels: 4th International Conference on Indium Phosphide and Related Materials / IPRM 1992; Newport, United States; 21 - 24 April 1992. Piscataway: IEEE, 1992, pp. 238 – 241
    DOI, Online Full Text
  • Meschede, H.; Albers, J.; Reuter, R.; Kraus, J.; Peters, D.; Brockerhoff, Wolfgang; Tegude, Franz-Josef
    RF Investigations on HEMT's at Cryogenic Temperatures Down to 20K using an On-Wafer Microwave Measurement Setup
    In: Proceedings of the 22nd European Microwave Conference / EuMC`92; Helsinki, Finland; 24.08.1992 - 27.08.1992, 1992, pp. 151 – 156
  • Koßlowski, Stefan; Bertenburg, Ralf M.; Koster, Norbert; Wolff, Ingo; Tegude, Franz-Josef; Narozny, Peter; Wenger, Josef; Dämbkes, Heinrich
    Advances in CPW-design applied to monolithic integrated Ka-band mesfet and HEMT-amplifiers on GaAs
    In: 14th Annual IEEE Gallium Arsenide Integrated Circuit Symposium / GaAs IC 1992; Miami Beach, United States; 4 - 7 October 1997. Piscataway: IEEE, 1992, pp. 119 – 122
    DOI, Online Full Text
  • Buchali, F.; Heedt, Christian H.; Prost, Werner; Gyuro, Imre; Meschede, Herbert; Tegude, Franz-Josef
    Analysis of gate leakage on MOVPE grown InAlAs/InGaAs-HFET
    In: Proceedings of the 22nd European Solid State Device Research Conference / ESSDERC '92, 14-17 September 1992, Leuven, Belgium. Amsterdam: IEEE Computer Society, 1992, pp. 401 – 404
  • Meschede, H.; Reuter, R.; Peters, D.; Kraus, J.; Bertenburg, Ralf M.; Brockerhoff, Wolfgang; Tegude, Franz-Josef
    On-Wafer RF Measurement Setup for the Characterization of HEMT's and High TC Superconductors at Very Low Temperatures Down to 20K
    In: Proceedings of IEEE International Microwave Symposium (MTT-S) / Albuquerque, USA; 01.06.1992 - 05.06.1992, 1992, pp. 1439 – 1442
  • Lakner, Hubert; Kubalek, Erich; Kraus, J.; Tegude, Franz-Josef
    High Resolution STEM Analysis of InGaAs/AlGaAs Heterostructures
    10th International Congress on Electron Microscopy, Granada, Spain, 07.09.1992 - 12.09.1992,
    Granada, Spain, 1992
  • Brockerhoff, Wolfgang; Ellrodt, P.; Güldner, W.; Heime, Klaus; Tegude, Franz-Josef
    Numerical analysis of InP-JFET by use of a Quasi 2D-model
    In: Proceedings of the 22nd European Solid State Device Research Conference / ESSDERC '92, 14-17 September 1992, Leuven, Belgium. Amsterdam: IEEE Computer Society, 1992, pp. 39 – 42
  • Buchali, F.; Heedt, Christian H.; Prost, Werner; Gyuro, Imre; Meschede, Herbert; Tegude, Franz-Josef
    Analysis of gate leakage on MOVPE grown InAlAs/InGaAs-HFET
    In: Microelectronic Engineering, Vol. 19, 1992, Nr. 1-4, pp. 401 – 404
    DOI, Online Full Text
  • Brockerhoff, Wolfgang; Ellrodt, P.; Güldner, W.; Heime, Klaus; Tegude, Franz-Josef
    Numerical analysis of InP-JFET by use of a quasi 2D-model
    In: Microelectronic Engineering, Vol. 19, 1992, Nr. 1-4, pp. 39 – 42
    DOI, Online Full Text

    • 1991

  • Rittweger, Matthias; Koster, Norbert; Koblowski, S.; Bertenburg, Ralf M.; Heinen, Stefan J.; Wolff, Ingo
    Full-Wave Analysis of a Modified Coplanar Air Bridge T-Junction
    In: 21st European Microwave Conference: Volume 2 / EuMC 1991; Stuttgart; Germany; 9 - 12 September 1991. Piscataway: IEEE, 1991, pp. 993 – 998
    DOI, Online Full Text
  • Joseph, M.; Guimaraes, Francisco Eduardo Gontijo; Kraus, J.; Tegude, Franz-Josef
    Characterization of reactive ion etched AlGaAs/GaAs heterostructures by photoluminescence and low temperature Hall measurements
    In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 9, 1991, Nr. 3, pp. 1456
    DOI
  • Scheffer, F.; Joseph, M.; Prost, Werner; Tegude, Franz-Josef; Lackner, H.; Zumkley, S.; Wingen, G.; Jäger, Dieter
    Growth and characterization of AlGaAs/GaAs Bragg reflectors for nonlinear optoelectronic devices
    In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 9, 1991, Nr. 1-3, pp. 361 – 364
    DOI
  • Heedt, Christian H.; Gottwald, Péter; Prost, Werner; Tegude, Franz-Josef; Künzel, Harald M.; Dickmann, Jürgen; Dämbkes, Heinrich
    Material characterisation of InGaAs/InAlAs heterostructure field effect transistors with heavily doped n-type InAlAs donor layer
    In: Third International Conference on Indium Phosphide and Related Materials: Conference Proceedings / 3rd International Conference on Indium Phosphide and Related Materials; Cardiff, Wales; 8 - 11 April 1991. New York: IEEE, 1991, pp. 284 – 287
    Online Full Text, DOI
  • Künzel, Harald M.; Passenberg, Wolfgang; Böttcher, J.; Heedt, Christian H.
    Optimization of the AlInAs growth temperature for AlInAs/GaInAs HEMTs grown by MBE
    In: Proceedings of the 21st European Solid State Device Research Conference / ESSDERC '91, 16-19 September 1991, Montreux, Switzerland. Amsterdam: IEEE Computer Society, 1991, pp. 569 – 572
  • Joseph, M.; Guimaraes, Francisco Eduardo Gontijo; Kraus, J.; Tegude, Franz-Josef
    Low Damage High Selective Dry Etch Process for the Fabrication of GaAs MESFET and AlxGa1-xAs/GaAs HFET
    In: Proceedings of the 14th State-of-the-Art Program of Compound Semiconductors / SOTAPOCS´91; Bellcore, USA; 03.05.1991 / Buckley, D.N.; Macrander, A.T. (Eds.). New York: Pennington, 1991, pp. 91 – 99
  • Lakner, Hubert; Bollig, Bernd; Kubalek, Erich; Heuken, Michael; Heime, Klaus; Scheffer, F.; Guimaraes, Francisco Eduardo Gontijo
    Scanning transmission electron microscopy of heterointerfaces grown by metalorganic vapor phase epitaxy (MOVPE)
    In: Journal of Crystal Growth, Vol. 107, 1991, Nr. 1-4, pp. 452 – 457
    DOI
  • Prost, Werner
    Technology for III/V-Semiconductor HFET Devices
    In: III-V Microelectronics. Amsterdam: Elsevier, 1991, pp. 277 – 313
    DOI
  • Guimaraes, Francisco Eduardo Gontijo; Gyuro, Imre; Scheffer, F.; Heuken, Michael; Heime, Klaus
    Optical and electrical properties of the AlₓGa₁₋ₓAs/GaAs single heterojunctions grown by low pressure MOVPE
    In: Journal of Crystal Growth, Vol. 107, 1991, Nr. 1-4, pp. 434 – 439
    DOI
  • Gyuro, Imre; Scheffer, F.; Joseph, M.; Roth, Bernd; Heuken, Michael; Heime, Klaus
    Ultralow doping profiles for applications in 3D integrated varactor tuned oscillators grown by MOVPE
    In: Journal of Crystal Growth, Vol. 107, 1991, Nr. 1-4, pp. 956 – 959
    DOI

    • 1990

  • Makowitz, Rainer; Brockerhoff, Wolfgang
    Simulation of short‐channel and surface effects in submicron GaAs MESFETs
    In: European Transactions on Telecommunications, Vol. 1, 1990, Nr. 4, pp. 401 – 409
    DOI
  • Brockerhoff, Wolfgang; Versteegen, Michael; Bertenburg, Ralf M.; Seiler, Ulrich; Heime, Klaus
    Simulation of surface effects in planar GaAs MESFET structures by use of a quasi‐2D model
    In: European Transactions on Telecommunications, Vol. 1, 1990, Nr. 4, pp. 389 – 392
    DOI
  • Gyuro, I.; Heuken, M.; Reemtsma, J.; Prost, Werner; Heime, K.
    Herstellung und Untersuchung von Heterostruktur-Feldeffekttransistoren mit isoliertem Gate (HIGFET)
    In: Proceedings ITG-Fachtagung "Heterostruktur-Bauelemente" / Schwaebisch Gmuend, Germany; 25.04.1990 - 27.04.1990, 1990, pp. 255 – 260
  • Joseph, M.; Roth, Bernd; Scheffer, F.; Meschede, Herbert; Beyer, Adalbert; Helme, K.
    3D Integration of GaAs MESFET and varactor diode for a VCO-MMIC
    In: 20th European Solid State Device Research Conference / ESSDERC`90; Nottingham, U.K.; 10.09.1990 - 13.09.1990 / Eccleston, W.; Rosser, P.J. (Eds.). Bristol: IEEE Computer Society, 1990, pp. 229 – 232
  • Brockerhoff, Wolfgang; Stöhr, Andreas; Prost, Werner; Meschede, H.; Heime, K.
    Dispersion und Arbeitspunktabhängigkeit des Ausgangswiderstandes in Heterostruktur-Feldeffekttransistoren
    In: ITG-Fachtagung "Heterostruktur-Bauelemente" / Schwäbisch Gmünd, Germany; 25.04.1990 - 27.04.1990, 1990, pp. 267 – 271
  • Zumkley, S.; Wingen, G.; Scheffer, F.; Prost, Werner; Jäger, Dieter
    Photonic Switching and SEED Effect in AlGaAs/GaAs DFB Structures Grown by MOVPE
    In: Photonic Switching II: Proceedings of the International Topical Meeting / International Topical Meeting, Kobe, Japan, April 12–14, 1990 / Tada, Kunio; Hinton, H. Scott (Eds.). Berlin, Heidelberg: Springer, 1990, pp. 185 – 189
    DOI
  • Kraus, J.; Meschede, H.; Brockerhoff, Wolfgang; Prost, Werner; Heime, K.; Nickel, H.; Lösch, R.; Schlapp, W.
    Submikrometer Al0.2Ga0.8As/In0.25Ga0.75As Mehrfinger-HFET für Mikrowellenschaltungen über 100 GHz hergestellt mit optischer Kontaktlithographie
    In: Proceedings ITG-Fachtagung "Heterostruktur-Bauelemente" / Schwaebisch Gmuend, Germany; 25.04.1990 - 27.04.1990, 1990, pp. 29 – 30
  • Zumkley, Stefan; Wingen, Georg; Borghs, Gustaaf; Scheffer, F.; Prost, Werner; Jäger, Dieter
    Electro-optical modulation in AlGaAs/GaAs distributed feedback structures
    In: High Speed Phenomena in Photonic Materials and Optical Bistability / The International Congress on Optical Science and Engineering, 12-16 March 1990, The Hague, The Netherlands / Jäger, Dieter (Eds.). Bellingham: SPIE, 1990, pp. 202 – 208
    DOI
  • Scheffer, F.; Joseph, M.; Roth, B.; Lakner, Hubert; Gyuro, I.; Heuken, M.; Heime, K.
    Optimized Layer Structures for 3D Integration of GaAs Varactor and MESFET for a wide Tuning Range VCO
    In: Proceedings of '17th European GaAs and Related III-V Compounds Application Symposium / GAAS´90; Jersey, U.K.; 24.09.1990 - 27.09.1990, 1990, pp. 509 – 514
  • Wingen, G.; Zumkley, S.; Scheffer, F.; Prost, Werner; Borghs, G.; Chaix, C.; Jäger, Dieter
    Electrooptical light modulation and SEED effect in surface oriented AlGaAs/GaAs Bragg reflectors
    Meeting on Future Directions for Optics in Computers,
    Besancon, France, 1990
  • Brockerhoff, Wolfgang; Prost, Werner; Meschede, Herbert; Kraus, Jörg; Heime, Klaus; Weimann, Guenter W.; Schlapp, Winfried
    d.c.- and r.f.-characterisation of conventional and superlattice heterostructure field-effect transistors at low temeperatures
    In: Solid State Electronics, Vol. 33, 1990, Nr. 11, pp. 1393 – 1400
    DOI
  • Roth, Bernd; Borkes, Johannes J.; Joseph, M.; Beyer, Adalbert
    Method for the development of monolithical integrated resonators on GaAs with increased Q-factor
    In: Conference Proceedings - 20th European Microwave Conference: Volume 2 / European Microwave Conference (EuMC); 10 - 13 September 1990; Budapest, Hungary. Tunbridge Wells: Microwave Exhibitions & Publ., 1990, pp. 965 – 970
  • Meschede, H.; Kraus, J.; Bertenburg, Ralf M.; Brockerhoff, Wolfgang; Prost, Werner; Heime, K.; Nickel, H.; Schlapp, W.; Lösch, R.
    Submicron pseudomorphic Al0.2Ga0.8As/InGaAs-HFET made by Conventional Optical Lithography for Microwave Circuit Applications above 100GHz
    In: Proceedings of the '20th European Solid State Device Research Conference / ESSDERC`90; Nottingham, U.K.; 10.09.1990 - 13.09.1990, 1990, pp. 105 – 108
  • Prost, Werner; Bettermann, W.; Gyuro, I.; Dämbkes, H.; Heime, K.; Heuken, M.; Schlapp, W.
    Hall-equivalent determination of carrier mobility and concentration in SQW-, MQW-, and HIG-FET channels
    In: Proceedings of the 16th International Symposium on GaAs and Related Compounds / GaAs RC´89; Karuizawa, Japan; 25 - 29 September 1989; Ikoma, T.. Bristol: IOP Publishing, 1990, pp. 501 – 506
  • Reemtsma, J.-H.; Meschede, Herbert; Brockerhoff, Wolfgang; Heime, Klaus; Schlapp, Winfried; Weimann, Guenter W.
    Properties of p-type heterostructure field effect transistors at cryogenic temperatures
    4th International Conference on Modulated Semiconductor Structures ; July 17-21, 1989, Ann Arbor, Michigan, USA,
    In: Surface Science, Vol. 228, 1990, Nr. 1-3, pp. 472 – 475
    DOI

    • 1989

  • Hendriks, Peter; Staring, A.A.M.; van Welzenis, Rob G.; Wolter, Joachim H.; Prost, Werner; Heime, Klaus; Schlapp, Winfried; Weimann, Günter W.
    Current oscillations at high electrical fields in the two-dimensional electron gas in GaAs/AlGaAs heterostructures
    In: Applied Physics Letters (APL), Vol. 54, 1989, Nr. 26, pp. 2668 – 2670
    DOI (Open Access)
  • Kibuuka, Godfrey; Bertenburg, Ralf M.; Naghed, Mohsen; Wolff, Ingo
    Coplanar lumped elements and their application in filters on ceramic and gallium arsenide substrates
    In: Proceedings of the 19th European Microwave Conference / EuMIC 1989; London, United Kingdom; 4 - 7 Sptember 1989. Tunbridge Wells: Microwave Exhibitions, 1989, pp. 656 – 661
    DOI, Online Full Text
  • Fockele, M.; Meyer, Bruno K.; Spaeth, Johann Martin; Heuken, Michael; Heime, Klaus
    Arsenic antisite defects in AlxGa1-xAs observed by luminescence detected electron spin resonance
    In: Proceedings of the 16th International Symposium on GaAs and Related Compounds / GaAs RC´89; Karuizawa, Japan; 25.09.1989 - 29.09.1989. Bristol: Institute of Physics Publishing (IOP), 1989, pp. 285 – 290
  • Koster, Norbert; Kosslowski, Stefan; Bertenburg, Ralf M.; Heinen, Stefan J.; Wolff, Ingo
    Investigations on air bridges used for MMICs in CPW technique
    In: Proceedings of the 19th European Microwave Conference / EuMIC 1989; London, United Kingdom; 4 - 7 Sptember 1989. Tunbridge Wells: Microwave Exhibitions, 1989, pp. 666 – 671
    DOI, Online Full Text
  • Joseph, M.; Roth, B.; Heuken, M.; Scheffer, F.; Meschede, H.; Heime, K.
    3-Dimensionale Integration von GaAs MESFET und Varactordiode
    In: Mikroelektronik für die Informationstechnik: Vorträge der ITG-Fachtagung / 3. bis 5. Oktober 1989 in Stuttgart. Berlin: VDE, 1989, pp. 215 – 219
  • Fockele, M.; Meyer, Bruno K.; Spaeth, Johann Martin; Heuken, Michael; Heime, Klaus
    Arsenic antisite defects in AlxGa1-xAs observed by luminescence-detected electron-spin resonance
    In: Physical Review B: Condensed matter and materials physics, Vol. 40, 1989, Nr. 3, pp. 2001 – 2004
    DOI
  • Reemtsma, J.-H.; Heime, Klaus; Schlapp, Winfried; Weimann, Günter W.
    Transport properties of the two-dimensional hole gas in p-type heterostructure field-effect transistors
    In: Journal of Applied Physics, Vol. 66, 1989, Nr. 1, pp. 298 – 302
    DOI (Open Access)
  • Brockerhoff, Wolfgang; Meschede, Herbert; Prost, Werner; Heime, Klaus; Weimann, Günter; Schlapp, Winfried
    RF Measurements and Characterization of Heterostructure Field-Effect Transistors at Low Temperatures
    In: IEEE Transactions on Microwave Theory and Techniques, Vol. 37, 1989, Nr. 9, pp. 1380 – 1388
    DOI, Online Full Text
  • Reemtsma, J.-H.; Kugler, Siegmar; Heime, Klaus; Schlapp, Winfried; Weimann, Günter W.
    Deep levels in p-type AlGaAs/GaAs heterostructures
    In: Journal of Applied Physics, Vol. 65, 1989, Nr. 7, pp. 2867 – 2869
    DOI (Open Access)
  • Roth, B.; Prost, Werner; Bertenburg, Ralf M.; Beyer, Adalbert; Wolff, I.
    Monolithisch integrierter Mikrowellenoszillator in Schlitzleitungstechnik
    In: NTZ: Fachzeitschrift für Informations- und Kommunikationstechnik, Vol. 42, 1989, Nr. 10, pp. 628 – 631
  • Kugler, Siegmar; Heime, Klaus; Schlapp, Winfried; Weimann, Günter W.
    Determination of Trap Parameters in Highly Doped Semiconductors from Low Frequency Noise Spectra
    10th International Conference on Noise in Physical Systems and 1/f Fluctuations (ICNF), Budapest, Ungarn, 21.08.1989 - 25.08.1989,
    Budapest, 1989
  • Kugler, Siegmar
    Evaluation of the trap concentration in highly doped semiconductors from low-frequency noise spectra
    In: Journal of Applied Physics, Vol. 66, 1989, Nr. 1, pp. 219 – 222
    DOI (Open Access)

    • 1988

  • Steiner, Klaus; Ntikbasanis, K.; Seiler, Ulrich; Heime, Klaus; Kuphal, Eckart
    InGaAs single- and dual-gate high-speed FETs : Preparation and performance
    In: 18th European Solid State Device Research Conference / ESSDERC 1988; Montpellier, France; 13 - 16 September 1988 / Nougier, J.-P.; Gasquet, D. (Eds.). Washington: IEEE Computer Society, 1988, pp. C4205 – C4208
    DOI, Online Full Text
  • Heime, Klaus; Steiner, Klaus
    InGaAs-Feldeffekttransistoren : Verstärkerbauelemente in integrierten optoelektronischen Schaltungen
    In: Mikroelektronik für die Informationstechnik: Vorträge der ITG-Fachtagung / ITG-Fachtagung Mikroelektronik für die Informationstechnik ; 3. bis 5. Oktober 1988 in Berlin. Berlin: VDE-Verlag, 1988, pp. 15 – 20
  • Steiner, Klaus; Seiler, Ulrich; Heime, Klaus; Kuphal, Eckart
    Influence of p-InP buffer layers on submicron InGaAs/InP junction field-effect transistors
    In: Applied Physics Letters (APL), Vol. 53, 1988, Nr. 25, pp. 2513 – 2515
    DOI (Open Access)
  • Steiner, Klaus; Ntikbasanis, K.; Seiler, Ulrich; Heime, Klaus; Kuphal, Eckart
    InGaAs Single- and Dual-Gate High Speed FETs : Preparation and Performance
    European Materials Research Conference (E-MRS), Strasbourg, France, 1988,
    In: Journal de Physique, 1988, pp. 205 – 207
  • Kaufmann, Leon Marcel Freddy; Heuken, Michael; Tilders, R.; Heime, Klaus; Jürgensen, Holger; Heyen, Meino
    Safety aspects of MOVPE in research and development : An example
    In: Journal of Crystal Growth, Vol. 93, 1988, Nr. 1-4, pp. 279 – 284
    DOI
  • Kugler, Siegmar
    Generation-Recombination Noise in the Saturation Regime of MODFET Structures
    In: IEEE Transactions on Electron Devices (T-ED), Vol. 35, 1988, Nr. 5, pp. 623 – 628
    DOI, Online Full Text
  • Reemtsma, J.-H.; Heime, Klaus; Schlapp, Winfried; Weimann, Günter W.
    p-type ohmic contacts to AlGaAs/GaAs heterostructures
    3rd International Conference on Superlattices Microstructures and Microdevices (ICSMM), Chicago, USA, 17.08.1987 - 20.08.1987,
    In: Superlattices and Microstructures, Vol. 4, 1988, Nr. 2, pp. 197 – 199
    DOI
  • Kugler, Siegmar; Steiner, Klaus; Seiler, Ulrich; Heime, Klaus; Kuphal, Eckart
    Low-frequency noise measurements on n-InGaAs/p-InP junction field-effect transistor structures
    In: Applied Physics Letters (APL), Vol. 52, 1988, Nr. 2, pp. 111 – 113
    DOI (Open Access)
  • Prost, Werner; Brockerhoff, Wolfgang; Heuken, M.; Kugler, S.; Heime, Klaus; Schlapp, W.; Weimann, G.
    Shallow and Deep Impurity Investigations : The Important Step Towards a Microwave Field-Effect Transistor Working at Cryogenic Temperatures
    In: Properties of Impurity States in Superlattice Semiconductors / Fong, C. Y.; Batra, Inder P.; Ciraci, S. (Eds.). Boston: Springer, 1988, pp. 135 – 146
    DOI
  • Kultscher, N.; Steiner, Klaus; Balk, L. J.
    Transducer-Less SEAM of III–V Compound Semiconductors
    In: Photoacoustic and Photothermal Phenomena: Proceedings / 5th International Topical Meeting, Heidelberg, Fed. Rep. of Germany, July 27–30, 1987 / Hess, Peter; Pelzl, Josef (Eds.). Berlin: Springer, 1988, pp. 237 – 240
    DOI

    • 1987

  • Heuken, M.; Kraus, J.; Heime, Klaus; Schlapp, W.; Weimann, Günter W.
    Characterization of Deep Levels in Superlattice and Conventional Heterostructure Field Effect-Transistors by Photocapacitance and C-V Measurements
    European Materials Research Conference (E-MRS), Strasbourg, France, 02.06.1987 - 05.06.1987,
    In: Journal de Physique, 1987, pp. 303 – 309
  • Prost, Werner; Brockerhoff, Wolfgang; Heime, Klaus; Schlapp, W.; Weimann, Günter W.
    Device performance and transport properties of HFETs at low temperatures
    In: Proceedings of the 14th International Symposium on GaAs and Related Compounds / GaAs RC´87; Heraklion, Greece; 28.09.1987 - 01.10.1987, 1987, pp. 681 – 684
  • Heime, K.
    Heterostruktur Feldeffekttransistoren
    In: Mikroelektronik, Vol. 1, 1987, pp. 76 – 79
  • Steiner, K.; Seiler, U.; Brockerhoff, Wolfgang; Heime, Klaus; Kuphal, E.
    High Transconductance Submicron Self-Aligned InGaAs JFETs
    In: Proceedings of the 14th International Symposium on GaAs and Related Compounds / GaAs RC´87; Heraklion, Greece; 28.09.1987 - 01.10.1987, 1987, pp. 721 – 724
  • Kugler, S.; Heime, Klaus; Schlapp, W.; Weimann, Günter W.
    Generation-Recombination Noise in Heterostructures in the Velocity Saturated Regime
    In: Proceedings of the 9th International Conference on Noise in Physical Systems and 1/f Fluctuations / Montreal, Canada; 25.05.1987 - 29.05.1987, 1987, pp. 78 – 81
  • Heuken, M.; Prost, Werner; Kugler, S.; Heime, Klaus; Schlapp, W.; Weimann, Günter W.
    Improved 77K Performance of AlAs/GaAs Superlattice Heterostructure Field-Effect-Transistors (SL HFET)
    In: Proceedings of the 13th International Symposium on Gallium Arsenide and Related Compounds / Las Vegas, Nevada; 28 September – 1 October 1986. Bristol: Institute of Physics Publishing (IOP), 1987, pp. 563 – 568
  • Steiner, Klaus; Heuken, Michael; Heime, Klaus; Trew, Robert J.; König, Ulf
    Trap detection at A p-p In₀.₅₃Ga₀.₄₇As/InP heterojunction by means of C-V, I-V and photocapacitance measurements
    In: Journal of Crystal Growth, Vol. 83, 1987, Nr. 2, pp. 246 – 251
    DOI

    • 1986

  • Heime, Klaus
    Heterostructure Characterization by Electronic and Optoelectronic Methods
    In: Advanced Materials for Telecommunication: Proceedings of the Symposium / Symposium "Advanced Materials for Telecommunication"; 17.06.1986 - 20.06.1986; Strasbourg/France. Les Ulis: Les Editions de Physique, 1986, pp. 287 – 310
  • Dingfen, Wu; Dening, Wang; Heime, Klaus
    An improved model to explain ohmic contact resistance of f-GaAs and other semiconductors
    In: Solid State Electronics, Vol. 29, 1986, Nr. 5, pp. 489 – 494
    DOI
  • Heuken, Michael; Loreck, Lutz; Heime, Klaus; Ploog, Klaus; Schlapp, Winfried; Weimann, Günter W.
    Deep Level Analysis in Heterostructure Field-Effect Transistors by Means of the Photo-FET Method
    15th European Solid State Device Research Conference (ESSDERC), Aachen, Germany, 09.09.1985 - 12.09.1985,
    In: IEEE Transactions on Electron Devices (T-ED), Vol. 33, 1986, Nr. 5, pp. 693 – 697
    DOI, Online Full Text
  • Steiner, Klaus; Schmitt, R.; Zuleeg, R.; Kaufmann, Leon Marcel Freddy; Heime, Klaus; Kuphal, Eckart; Wolter, Joachim H.
    CV profiling on p-p- and n-s.i.-In₀.₅₃Ga₀.₄₇As/InP heterointerfaces
    2nd International Conference on Modulated Semiconductor Structures (MSS), 09.09.1985 - 13.09.1985, Kyoto, Japan,
    In: Surface Science, Vol. 174, 1986, Nr. 1-3, pp. 331 – 336
    DOI
  • Prost, Werner; Brockerhoff, Wolfgang; Heime, Klaus; Ploog, Klaus; Schlapp, Winfried; Weimann, Günter W.; Morkoç, Hadis D.
    Gate-Voltage Dependent Transport Measurements on Heterostructure Field-Effect Transistors
    In: IEEE Transactions on Electron Devices (T-ED), Vol. 33, 1986, Nr. 5, pp. 646 – 650
    DOI, Online Full Text
  • Schmitt, R.; Steiner, Klaus; Kaufmann, Leon Marcel Freddy; Brockerhoff, Wolfgang; Heime, Klaus; Kuphal, Eckart
    InGaAs-JFETs with p+-Gates Diffused from Spin-on Films for Ka-Band Operation
    In: Proceedings of the 12th International Symposium on GaAs and Related Compounds / GaAs RC´85; Karuizawa, Japan; 01.09.1985. Bristol: Institute of Physics Publishing (IOP), 1986, pp. 619 – 624
  • Prost, Werner; Brockerhoff, Wolfgang; Heime, Klaus; Ploog, Klaus H.; Schlapp, Winfried; Weimann, Günter W.; Morkoç, Hadis D.
    Application of the Magnetotransconductance Mobility Measurements Method to Two-Dimensional Electron Gas FETs
    In: Semiconductor Quantum Well Structures and Superlattices: Papers / MRS-Europe Spring Meeting (Symposium 3); 13-15 Mai 1985; Strasbourg/France. Les Ulis: Editions de Physique, 1986, pp. 91 – 96

    • 1985

  • Schmitt, R.; Heime, Klaus
    InGaAs junction FETs with frequency limit (MAG = 1) above 30 GHz
    In: Electronics Letters, Vol. 21, 1985, Nr. 10, pp. 449 – 451
    DOI, Online Full Text
  • Brockerhoff, Wolfgang; Dämbkes, Heinrich; Heime, Klaus
    Numerical Investigation of GaAs MESFETs and InGaAs JFETs and Comparison with Experimental Results
    In: Proceedings of the 3rd International Workshop on Physics of Semiconductor Devices / Madras, India; 27.11.1985 - 02.12.1985, 1985, pp. 23 – 30

    • 1984

  • Dämbkes, Heinrich; Heime, Klaus
    Field-Effect Transistors with a Two-Dimensional Electron Gas as Channel
    In: Two-Dimensional Systems, Heterostructures, and Superlattices: Proceedings / International Winter School Mauterndorf, Austria, 26 February - 2 March 1984 / Bauer, Günther; Kuchar, Friedemar; Heinrich, Helmut (Eds.). Berlin: Springer, 1984, pp. 125 – 135
    DOI
  • Daembkes, Heinrich; Brockerhoff, Wolfgang; Heime, Klaus; Cappy, Alain
    Improved Short-Channel GaAs MESFET's by Use of Higher Doping Concentration
    In: IEEE Transactions on Electron Devices (T-ED), Vol. 31, 1984, Nr. 8, pp. 1032 – 1037
    DOI, Online Full Text
  • Tegude, Franz-Josef; Heime, Klaus
    Investigation of Deep Levels at Interfaces by Means of FET-Structures and Optical Excitation
    In: Proceedings of the 11th International Symposium on GaAs and Related Compounds / GaAs RC´84; Biarritz, France; 26.09. - 28.09.1984, 1984, pp. 305 – 310
  • Loreck, Lutz; Dämbkes, Heinrich; Heime, Klaus; Ploog, Klaus H.; Weimann, Günter W.
    Deep-Level Analysis in (AlGa)As–GaAs 2-D Electron Gas Devices by Means of Low-Frequency Noise Measurements
    In: IEEE Electron Device Letters, Vol. 5, 1984, Nr. 1, pp. 9 – 11
    DOI, Online Full Text
  • Dämbkes, Heinrich; Heime, Klaus
    High-Speed Homo- and Heterostructure Field-Effect Transistors
    In: Advances in Solid State Physics: Plenary Lectures / 48th Annual Meeting of the German Physical Society (DPG) and of the Divisions “Semiconductor Physics” “Metal Physics” “Low Temperature Physics” “Thermodynamics and Statistical Physics” “Thin Films” “Surface Physics” “Magnetism” “Physics of Polymers” “Molecular Physics”, Münster, 12 - 17 March 1984 / Grosse, P. (Eds.). Berlin: Springer, 1984, pp. 311 – 330
    DOI
  • Dämbkes, Heinrich; Brockerhoff, Wolfgang; Heime, Klaus; Ploog, Klaus H.; Weimann, Günter W.; Schlapp, Winfried
    Optimisation of modulation-doped heterostructures for TEGFET operation at room temperature
    In: Electronics Letters, Vol. 20, 1984, Nr. 15, pp. 615 – 617
    DOI, Online Full Text
  • Loreck, Lutz; Schmitt, R.; Heime, Klaus; Kuphal, E.
    Deep Level Analysis in (InGa)As-InP by Measuring the Low Frequency Noise of a Simple Resistor Structure
    In: Proceedings of the International Electron Device Meeting / IEDM´84; Hsinchu, Taiwan; 04.09. - 06.09.1984, 1984, pp. 59 – 63
  • Heime, Klaus; Dämbkes, Heinrich; Brockerhoff, Wolfgang
    GaAs MESFETs with a Highly Doped Channel
    In: International Conference on Solid State Devices and Materials / ICSSDM´84; Kobe, Japan; 30.08. - 01.09.1984. Tokyo: Business Cent for Academic Soc Japan, 1984, pp. 375 – 378
  • Wu Dingfen; Dämbkes, Heinrich; Heime, Klaus
    Noneutectic Au/Ge Alloy Ohmic Contact Technology for Diffused N-Channel GaAs MESFET
    In: Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, Vol. 5, 1984, Nr. 1, pp. 99 – 102
  • Schubert, Erdmann F.; Ploog, Klaus H.; Dämbkes, Heinrich; Heime, Klaus
    Selectively doped n-AlₓGa₁₋ₓAs/GaAs heterostructures with high-mobility two-dimensional electron gas for field effect transistors : Part I: Effect of parallel conductance
    In: Applied Physics A: Materials Science and Processing, Vol. 33, 1984, Nr. 2, pp. 63 – 76
    DOI
  • Arnold, Norbert; Schmitt, R.; Heime, Klaus
    Diffusion in III-V semiconductors from spin-on-film sources
    In: Journal of Physics D: Applied Physics, Vol. 17, 1984, Nr. 3, pp. 443 – 474
    DOI (Open Access)
  • Schubert, Erdmann F.; Ploog, Klaus H.; Dämbkes, Heinrich; Heime, Klaus
    Selectively doped n-AlₓGa₁₋ₓAs/GaAs heterostructures with high-mobility two-dimensional electron gas for field effect transistors : Part II: Hot electron effects
    In: Applied Physics A: Materials Science and Processing, Vol. 33, 1984, Nr. 3, pp. 183 – 193
    DOI

    • 1983

  • Loreck, L.; Dämbkes, Heinrich; Ploog, K.; Heime, Klaus
    Deep Level Analysis in AlGaAs-GaAs MODFETs by Means of Low Frequency Noise Measurements
    In: Proceedings of the International Electron Device Meeting / IEDM`83; Washington D.C., USA; 05.12.1983 - 07.12.1983, 1983, pp. 107 – 110
  • Arnold, Norbert; Schmitt, R.; Dämbkes, Heinrich; Heime, Klaus
    Diffusion aus Dotierstoffemulsionen - ein einfaches und preiswertes Verfahren zur Dotierung von III-V- Halbleitern
    In: EPP Elektronik, Produktion & Prüftechnik, 1983, Nr. März, pp. 102 – 104
  • Loreck, L.; Dämbkes, Heinrich; Heime, Klaus; Ploog, K.; Weimann, G.
    Low Frequency Noise in AlGaAs-GaAs 2-d Electron Gas Devices and its Correlation to Deep Levels
    In: Proceedings of the International Conference on Noise in Physical Systems and 1/f Fluctuations / ICNF´83; Montpellier, France; 17.05.1983 - 20.05.1983 / Savelli, M.; Lecoy, G.; Nougier, J.P. (Eds.). Amsterdam: North-Holland Publishing, 1983, pp. 261 – 264
  • Schmitt, R.; Arnold, Norbert; Heime, Klaus; Eisele, H.; Haspeklo, H.; Benz, K.W.
    Diffusion into InP and InGaAs from Spin-on Film Sources and Applications to Devices
    2nd NATO Workshop on Materials Aspects of InP; Lancaster, U.K.; 28.03.1983 - 30.03.1983,
    Lancaster, 1983
  • Baston, J.; Tegude, Franz-Josef; Heime, Klaus
    Traps at interfaces between GaAs n-type LPE layers and different substrates
    In: Surface Science, Vol. 132, 1983, Nr. 1-3, pp. 465 – 468
    DOI
  • Daembkes, Heinrich; Brockerhoff, Wolfgang; Heime, Klaus
    GaAs-MESFETs with Highly Doped (1018cm-3) Channels : An Experimental and Numerical Investigation
    In: Proceedings of the International Electron Device Meeting / IEDM`83; Washington D.C., USA; 05.12.1983 - 07.12.1983. Piscataway: IEEE, 1983, pp. 621 – 624
  • Daembkes, Heinrich; Brockerhoff, Wolfgang; Heime, Klaus
    Improved Performance of Micron and Submicron Gate GaAs-MESFETs due to High Electron Concentrations (n = 1018cm-3) in the Channel
    In: Proceedings of the IEEE GaAs IC Symposium / GaAs IC´83; Phoenix, USA; 01.10.1983. New York: IEEE Electron Devices Society, 1983, pp. 153 – 156

    • 1982

  • Dingfen, Wu; Heime, Klaus
    New explanation of ND⁻¹dependence of specific contact resistance for n-GaAs
    In: Electronics Letters, Vol. 18, 1982, Nr. 22, pp. 940 – 941
    DOI, Online Full Text
  • Tegude, Franz-Josef; Baston, J.; Arnold, Norbert; Heime, Klaus
    Deep Level Profiles of GaAs Active Layers and their Correlation to Substrate Properties
    In: Semi-insulating III-V materials: Evian 1982 / Conference on Semi-Insulating III-V Materials 2; 1982.04.19-21; Evian, France. Nantwich: Shiva, 1982, pp. 291 – 297
  • Arnold, Norbert; Schmitt, R.; Däembkes, Heinrich; Heime, Klaus
    Diffusion aus Dotierstoffemulsionen - ein einfaches und preiswertes Verfahren zur Dotierung von III-V- Halbleitern
    In: Internationale Messe für Bauelementefertigung: Konferenzunterlagen / IMB; 20.09.1982 - 22.09.1982; Wiesbaden, Deutschland. Wunsdorf: Network, 1982, pp. 119 – 132

    • 1981

  • Kaufmann, L. M. F.; Tilders, R.; Heime, Klaus; Dinges, H. W.
    RF-Sputtering of Silicon Nitride Layers on GaAs Substrates : Characterization of an Intermediate Layer Between the Substrate and the Deposited Film
    In: Insulating Films on Semiconductors: Proceedings / Second International Conference, INFOS 81, Erlangen, Fed. Rep. of Germany, April 27-29, 1981 / Schulz, Max J.; Pensl, Gerhard (Eds.). Berlin: Springer, 1981, pp. 294 – 297
    DOI
  • Arnold, Norbert; Heime, Klaus
    Chromium and Tin Migration During Open Tube Diffusion into GaAs
    In: Proceedings of the International Symposium on GaAs and Related Compounds / GaAs RC´81; Oiso, Japan; 20.09.1981 - 23.09.1981. Bristol: Institute of Physics Publishing (IOP), 1981, pp. 371 – 376

    • 1980

  • Arnold, Norbert; Daembkes, Heinrich; Heime, Klaus
    I.C.-compatible completely planar GaAs M.E.S.F.E.T.S. by selective diffusion
    In: Electronics Letters, Vol. 16, 1980, Nr. 24, pp. 923 – 924
    DOI, Online Full Text
  • Tegude, Franz-Josef; Heime, Klaus
    Photo-f.e.t. Method : High-Resolution deep-level measurement technique using a m.e.s.f.e.t. structure
    In: Electronics Letters, Vol. 16, 1980, Nr. 1, pp. 22 – 23
    DOI, Online Full Text
  • Tegude, Franz-Josef; Heime, Klaus
    Deep Level Measurements of Layers on Semi-Insulating GaAs Substrates by Means of the Photofet Method
    In: Semi-Insulating III–V Materials: Nottingham 1980 / Rees, G. J. (Eds.). Basel: Birkhäuser, 1980, pp. 321 – 328
    DOI
  • Arnold, Norbert; Daembkes, Heinrich; Heime, Klaus
    Tin Diffusion from Doped Oxides for Fabricating GaAs Microwave Devices
    In: Proceedings of the 11th Conference on Solid State Devices / ICSSD´79; Tokio, Japan; Aug 27 - Aug 29, 1979, 1980, pp. 89 – 90
    DOI
  • Arnold, Norbert; Daembkes, Heinrich; Heime, Klaus
    Tin diffusion from doped oxides for fabricating gaas microwave devices
    In: Japanese Journal of Applied Physics (JJAP), Vol. 19, 1980, Nr. Suppl. 19-1, pp. 361 – 364
    DOI (Open Access)

    • 1978

  • Jäger, Dieter; Tegude, Franz-Josef
    Nonlinear wave propagation along periodic-loaded transmission lines
    In: Applied Physics, Vol. 15, 1978, Nr. 4, pp. 393 – 397
    DOI, Online Full Text