Veröffentlichungen von Roland Schmechel
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Study of thermal material properties for Ta- and Al-substituted Li7La3Zr2O12 (LLZO) solid-state electrolyte in dependency of temperature and grain sizeIn: Journal of Materials Chemistry A: Materials for Energy and Sustainability, Jg. 10, 2022, Nr. 22, S. 12177 – 12186DOI (Open Access)
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Correction: Study of thermal material properties for Ta- and Al-substituted Li7La3Zr2O12 (LLZO) solid-state electrolyte in dependency of temperature and grain sizeIn: Journal of Materials Chemistry A: Materials for Energy and Sustainability, Jg. 10, 2022, Nr. 39, S. 21177 – 21177DOI (Open Access)
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Solution processable GHz silicon Schottky diodesIn: 2021 IEEE International Flexible Electronics Technology Conference / IEEE International Flexible Electronics Technology Conference (IFETC) ; 8 - 11 August 2021, Online. Piscataway: Institute of Electrical and Electronics Engineers, 2021, S. 26 – 28
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Influence of the cathode microstructure on the stability of inverted planar perovskite solar cellsIn: RSC Advances, Jg. 10, 2020, Nr. 40, S. 23653 – 23661DOI (Open Access)
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Nanoparticle ink‐based silicon Schottky diodes operating up to 2.84 GHzIn: Nano Select, Jg. 1, 2020, Nr. 6, S. 659 – 665DOI (Open Access)
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Ultra-fast measurement circuit for transient space charge limited current in organic semiconductor thin filmsIn: Measurement Science and Technology, Jg. 31, 2020, Nr. 1, S. 015901
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A Stochastic Large-Signal Model for Printed High-Frequency Rectifiers Used for Efficient Generation of Higher HarmonicsIn: IEEE Transactions on Microwave Theory and Techniques (T-MTT), Jg. 68, 2020, Nr. 6, S. 2151 – 2160
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Investigating Zinc Ketoiminates as a New Class of Precursors for Solution Deposition of ZnO Thin FilmsIn: Journal of Nanoscience and Nanotechnology, Jg. 19, 2019, Nr. 2, S. 867 – 876
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Spatially resolved investigation of the defect states in methylammonium lead iodide perovskite bicrystalsIn: Journal of Materials Chemistry C: Materials for Optical and Electronic Devices, Jg. 7, 2019, Nr. 42, S. 13156 – 13160
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Analysis of stochastic Schottky barrier variations within printed high frequency rectifiers for harmonics generationIn: IEEE MTT-S Int. Microwave Workshop Series on Advanced Materials and Processes / IMWS-AMP 2019; July 16-18, Bochum, Germany, 2019, S. 169 – 171
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Experimental evidence for the separation of thermally excited bipolar charge carries within a p-n junction : A new approach to thermoelectric materials and generatorsIn: Journal of Applied Physics, Jg. 125, 2019, Nr. 18, S. 184502
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Thermoelectrics versus thermophotovoltaics : two approaches to convert heat fluxes into electricityIn: Journal of Physics D: Applied Physics, Jg. 52, 2019, Nr. 27, S. 275501DOI (Open Access)
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Analysis of stochastik Schottky barrier variations within printed high frequency rectifiers for harmonics generation
IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes (IMWS-AMP 2019), 16-18 July 2019, Bochum, Germany,2019 -
MIS-TSC: A combination of the thermally stimulated current method and a metal-insulator-semiconductor device for unipolar trap spectroscopyIn: Applied Physics Letters (APL), Jg. 114, 2019, Nr. 15, S. 152104
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Modeling of random nanostructures based on SEM images and analysis of resulting RF-performance
COMSOL Conference 2018, 22-24 October 2018, Lausanne,Lausanne, 2018 -
Efficient p-n junction-based thermoelectric generator that can operate at extreme temperature conditionsIn: Journal of Physics D: Applied Physics, Jg. 51, 2018, Nr. 1, 014005DOI, Online Volltext (Open Access)
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Anisotropic layered Bi2Te3-In2Te3 composites: control of interface density for tuning of thermoelectric propertiesIn: Scientific Reports, Jg. 7, 2017, S. 43611DOI (Open Access)
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Soluble metal oxo alkoxide inks with advanced rheological properties for inkjet-printed thin-film transistorsIn: ACS Applied Materials & Interfaces, Jg. 9, 2017, Nr. 3, S. 2625 – 2633
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Modeling of electron beam induced GaAs nanowire attractionIn: Abstractband: MiFuN: Microstructural Functionality at the Nanoscale / International Workshop on Microstructural Functionality at the Nanoscale (MiFuN 2017), 4. - 6. Oktober 2017, Duisburg. Duisburg, 2017
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Microstructure and thermoelectric properties of Si-WSi2 nanocompositesIn: Acta Materialia, Jg. 125, 2017, S. 321 – 326
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Film forming properties of silicon nanoparticles on SixNy coated substrates during excimer laser annealingIn: Optics and Laser Technology, Jg. 90, 2017, S. 33 – 39
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Silicon nanoparticle inks for RF electronic applications
FLEX Europe 2017/SEMICON Europa 2017, Munich, 14-17 November 2017,München, 2017 -
Anisotropic n-Type Bi2Te3-In2Te3 Thermoelectric Material Produced by Seeding Zone Melting and Solid State TransformationIn: Crystal Growth & Design, Jg. 16, 2016, Nr. 2, S. 617 – 624
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Modelling of electron beam induced nanowire attractionIn: Journal of Applied Physics, Jg. 119, 2016, Nr. 14, S. 145101
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Super-resolution for scanning light stimulation systemsIn: Review of Scientific Instruments, Jg. 87, 2016, Nr. 9, S. 093701
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Silicon-based nanocomposites for thermoelectric applicationIn: Physica Status Solidi (A) - Applications and Materials Science, Jg. 213, 2016, Nr. 3, S. 497 – 514
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Two-step annealing leading to refined Bi2Te3-In2Te3 lamellar structures for tuning of thermoelectric propertiesIn: Journal of Electronic Materials (JEM), Jg. 45, 2016, Nr. 3, S. 1654 – 1660
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Concepts for medium-high to high temperature thermoelectric heat-to-electricity conversion : a review of selected materials and basic considerations of module designIn: Translational Materials Research, Jg. 2, 2015, Nr. 2, 025001DOI (Open Access)
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Influence of layer thickness and homogeneity on contactless deposited high-performance indium oxide thin-film transistorsIn: EuroDisplay 2015 / De Smet, Herbert; EuroDisplay, Ghent, Belgium, 21-23 September 2015 / Society for Information Display (Hrsg.). Red Hook: Curran Associates, Inc., 2015, S. 53
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Sample temperature profile during the excimer laser annealing of silicon nanoparticlesIn: Optics and Laser Technology, Jg. 74, 2015, S. 132 – 137
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Silicon-based nanocomposites for thermoelectric high temperature waste heat recoveryIn: ECS Transactions, Jg. 69, 2015, Nr. 9, S. 3 – 10
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Scanning light stimulation system with active focus correction at μm resolution for PV applicationsIn: IEEE Journal of Photovoltaics, Jg. 5, 2015, Nr. 2, S. 627 – 632
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Thermoelectric properties of pulsed current sintered nanocrystalline Al-doped ZnO by chemical vapour synthesisIn: Journal of Materials Chemistry A: Materials for Energy and Sustainability, Jg. 3, 2015, Nr. 1, S. 189 – 197DOI, Online Volltext (Open Access)
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Thermoelectrics from silicon nanoparticles : the influence of native oxideIn: The European Physical Journal B: Condensed Matter and Complex Systems, Jg. 88, 2015, Nr. 6, 163
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Thermoelectric transport properties of boron-doped nanocrystalline diamond foilsIn: Carbon, Jg. 81, 2015, S. 650 – 662DOI, Online Volltext (Open Access)
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A facile solution-doping method to improve a low-temperature zinc oxide precursor : towards low-cost electronics on plastic foilIn: Advanced Functional Materials, Jg. 24, 2014, Nr. 17, S. 2537 – 2543
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Fabrication of High-Temperature-Stable Thermoelectric Generator Modules Based on Nanocrystalline SiliconIn: Journal of Electronic Materials (JEM), Jg. 43, 2014, Nr. 5, S. 1389 – 1396
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High Temperature Thermoelectric Device Concept Using Large Area PN JunctionsIn: Journal of Electronic Materials (JEM), Jg. 43, 2014, Nr. 6, S. 2376 – 2383
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Note : Automated optical focusing on encapsulated devices for scanning light stimulation systemsIn: Review of Scientific Instruments, Jg. 85, 2014, Nr. 8, S. 086104
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Innovative Energieeffizienz - Nanoskalige Materialien für die ThermoelektrikIn: Unikate: Berichte aus Forschung und Lehre, 2013, Nr. 43: NanoEnergie : Materialentwicklung für eine nachhaltige Energieversorgung, S. 52 – 63DOI, Online Volltext (Open Access)
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Reduced Coulomb Interaction in Organic Solar Cells by the Introduction of Inorganic high-k Nanostructured MaterialsIn: Physica Status Solidi (A) - Applications and Materials Science, Jg. 210, 2013, Nr. 9, S. 1712 – 1718
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Electrical Contact Resistance of Electroless Nickel to Nanocrystalline Silicon and the Fabrication of a Thermoelectric GeneratorIn: Electrical contacts to nanomaterials and nanodevices / Symposium T: Electrical Contacts to Nanomaterials and Nanodevices, April 1 - 5, 2013, San Francisco, California, USA / Léonard, F. (Hrsg.). New York [u.a.]: Cambridge Univ. Press, 2013, S. 3 – 8
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A New Thermoelectric Concept Using Large Area PN JunctionsIn: Nanoscale thermoelectric materials: thermal and electrical transport, and applications to solid-state cooling and power generation. New York, NY [u.a.]: Cambridge Univ. Press, 2013, S. 3 – 8
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A novel adaptive focusing principle for scanning light stimulation systems down to 2μm resolutionIn: 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) / 39th Photovoltaic Specialists Conference (PVSC), 16-21 June 2013. New York, NY: Institute of Electrical and Electronics Engineers Inc., 2013, S. 642 – 646
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Reduced Coulomb interaction in organic solar cells by the introduction of high-k SrTiO₃ nanoparticlesIn: 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) / 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC), 16 - 21 June 2013, Tampa, Florida. New York, NY: Institute of Electrical and Electronics Engineers Inc., 2013, S. 3086 – 3091
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A Thermoelectric Generator Concept Using a p-n Junction : Experimental Proof of PrincipleIn: Journal of Electronic Materials (JEM), Jg. 42, 2013, Nr. 7, S. 2297 – 2300
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Thermoelectric Properties of Nanocrystalline Silicon from a Scaled-Up Synthesis Plant [Correction]In: Advanced Engineering Materials. Weinheim: Wiley-Blackwell, Jg. 15, 2013, Nr. 11, S. 1152
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Laser-doping of crystalline silicon substrates using doped silicon nanoparticlesIn: Thin Solid Films, Jg. 548, 2013, S. 437 – 442
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A new adaptive light beam focusing principle for scanning light stimulation systemsIn: Review of Scientific Instruments, Jg. 84, 2013, Nr. 2, S. 023707-1 – 023707-4
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Impact of Rapid Thermal Annealing on Thermoelectric Properties of Bulk Nanostructured Zinc OxideIn: Nanoscale thermoelectric materials: thermal and electrical transport, and applications to solid-state cooling and power generation / Material Research Society spring meeting, April 1 - 5, 2013, San Francisco, California, U.S.A. / Beckman, Scott P. (Hrsg.). New York: Cambridge Univ. Press, 2013, S. 99 – 104
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Note : High Resolution Alternating Current/Direct Current Harman TechniqueIn: Review of Scientific Instruments, Jg. 84, 2013, Nr. 10, 106106
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Corrigendum to " Mechanical layer compaction for dispersion processed nanoparticulate zinc oxide thin film transistors" : [Microelectron. Eng. 96 (2012) 36-39]In: Microelectronic Engineering, Jg. 103, 2013, S. 17
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Reduced Coulomb interaction in organic solar cells by the introduction of high-k SrTi03 nanoparticlesIn: 39th IEEE Photovoltaic Specialists Conference (PVSC 39): Session OPV Active Layers and Scale Up / 39th IEEE Photovoltaic Specialists Conference, June 16-21, 2013, Tampa Bay Florida. Tampa Convention Center, Tampa, FL, USA, 2013
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Thermoelectric properties of nanocrystalline silicon from a scaled-up synthesis plantIn: Advanced Engineering Materials, Jg. 15, 2013, Nr. 5, S. 379 – 385
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Excimer Laser Doping Using Highly Doped Silicon NanoparticlesIn: Physica Status Solidi (A) - Applications and Materials Science, Jg. 210, 2013, Nr. 11, S. 2456 – 2462
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Reduced exciton binding energy in organic semiconductors : Tailoring the Coulomb interactionIn: Physica Status Solidi (RRL): Rapid Research Letters, Jg. 6, 2012, Nr. 2, S. 68 – 70
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Laser-sintered thin films of doped SiGe nanoparticlesIn: Applied Physics Letters (APL), Jg. 100, 2012, Nr. 23, 231907
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Solution processed amorphous In2O3-based TFT performance depending on the semiconductor film morphologyIn: 19th International Display Workshops 2012 (IDW/AD '12): Kyoto, Japan, 4 - 5 [i.e. 7] December 2012 ; [held in conjunction with Asia display 2012], Jg. 1, 2012, S. 289 – 292
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Metal Oxide Thin-Film Transistors from Nanoparticles and SolutionsIn: Nanoparticles from the gas phase: formation, structure, properties / Lorke, Axel (Hrsg.). Heidelberg: Springer, 2012, S. 387 – 409
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N-type perylene to fill voids in solution processed nanoparticulate zinc oxide thin filmsIn: Physica E: Low-dimensional Systems and Nanostructures, Jg. 44, 2012, Nr. 10, S. 2124 – 2127
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Mechanical layer compaction for dispersion processed nanoparticulate zinc oxide thin film transistorsIn: Microelectronic Engineering, Jg. 96, 2012, S. 36 – 39
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Reduced Coulomb interaction in organic semiconductors: Tailoring the effective system permittivity2012
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The realization of a pn-diode using only silicon nanoparticlesIn: Scripta Materialia, Jg. 67, 2012, Nr. 3, S. 265 – 268
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Influence of Annealing Atmospheres and Synthetic Air Treatment on Solution Processed Zinc Oxide Thin Film TransistorsIn: Journal of Applied Physics, Jg. 112, 2012, Nr. 3, 034506
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Nanoparticles from the gasphase : formation, structure, propertiesHeidelberg: Springer, 2012(NanoScience and technology)
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Thin-film transistors with a channel composed of semiconducting metal oxide nanoparticles deposited from the gas phaseIn: Journal of Nanoparticle Research, Jg. 14, 2012, Nr. 6, 888
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The Effect of Peltier Heat During Current Activated DensificationIn: Applied Physics Letters (APL), Jg. 101, 2012, Nr. 1, 013113
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A sintered nanoparticle p-n junction observed by a Seebeck microscanIn: Journal of Applied Physics, Jg. 111, 2012, Nr. 5, 054320
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Artificially nanostructured n-type SiGe bulk thermoelectrics through plasma enhanced growth of alloy nanoparticles from the gas phaseIn: Journal of Materials Research (JMR), Jg. 26, 2011, Nr. 15, S. 1872 – 1878
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Electronic properties of polyvinylpyrrolidone at the zinc oxide nanoparticle surface : PVP in ZnO dispersions and nanoparticulate ZnO thin films for thin film transistorsIn: Journal of Materials Science, Jg. 46, 2011, Nr. 24, S. 7776 – 7783
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From nanoparticles to nanocrystalline bulk : percolation effects in field assisted sintering of silicon nanoparticlesIn: Nanotechnology, Jg. 22, 2011, Nr. 13, 135601
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High performance low temperature solution-processed zinc oxide thin film transistorIn: Thin Solid Films, Jg. 519, 2011, Nr. 16, S. 5623 – 5628
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Influence of the annealing atmosphere on solution based zinc oxide thin film transistorsIn: Electronic organic and inorganic hybrid nanomaterials: synthesis, device physics and their applications / 2011 MRS Spring Meeting, April 25 - 29, San Francisco, California, USA. New York: Cambridge Univ. Press, 2011, S. 71 – 77
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Role of oxygen on microstructure and thermoelectric properties of silicon nanocompositesIn: Journal of Applied Physics, Jg. 110, 2011, Nr. 11, 113515
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Field effects on SnOx and SnO2 nanoparticles synthesized in the gas phaseIn: Physica E: Low-dimensional Systems and Nanostructures, Jg. 42, 2010, Nr. 9, S. 2471 – 2476
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Influence of spark plasma sintering parameters on the thermo-electric performance of nanocrystalline silicon
1st International Conference on Materials for Energy (EnMat), 4. - 8. Juli 2010 Karlsruhe, Germany,Karlsruhe, 2010 -
Nanocrystalline Silicon Compacted by Spark-Plasma Sintering : Microstructure and Thermoelectric PropertiesIn: Thermoelectric materials 2010 - growth, properties, novel characterization methods and applications / Symposium DD: "Thermoelectric Materials - Growth, Properties, Novel Characterization Methods, and Applications", April 5 - 9, 2010, San Francisco, California / Baniecki, John D. (Hrsg.). Warrendale: Materials Research Society, 2010, S. 9 – 16
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Influence of Spark Plasma Sintering Parameters on the Thermoelectric Performance of Nanocrystalline Silicon
Materials Research Society Spring Meeting 2010, Symposium DD: Thermoelectric Materials - Growth, Properties, Novel Characterization Methods, and Applications ; 05.04.2010, San Francisco, CA, USA,2010 -
Photothermal laser processing of thin silicon nanoparticle films : prospects in photovoltaic applications
1st International Conference on Materials for Energy, 4. - 8. Juli 2010 Karlsruhe, Germany,Karlsruhe, 2010 -
Photovoltaic devices from silicon nanoparticlesIn: Photovoltaics and optoelectronics from nanoparticles / Symposium T, "Photovoltaics and Optoelectronics from Nanoparticles", April 5 - 9, 2010, San Francisco, CA, USA / Winterer, Markus; Gladfelter, Wayne L.; Gamelin, Daniel R.; Oda, Shunri (Hrsg.). Warrendale: MRS, 2010, S. 107 – 111
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Synthesis of Nano-sized Silicon Particles for Use as Ecological Thermoelectric Material
Materials Research Society Spring Meeting 2010, Symposium DD: Thermoelectric Materials - Growth, Properties, Novel Characterization Methods, and Applications ; 08.04.2010, San Francisco, CA, USA,2010 -
Synthesis of highly-doped silicon and germanium nanoparticles in a low-pressure plasma-reactor for thermoelectric applications
1st International Conference on Materials for Energy, 4. - 8. Juli 2010 Karlsruhe, Germany,Karlsruhe, 2010 -
Trap states and space charge limited current in dispersion processed zinc oxide thin filmsIn: Journal of Applied Physics, Jg. 108, 2010, Nr. 12, S. 124502
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Si-nanoparticles and their Potential for Photovoltaic Devices
ESF-FWF Conference - Nanotechnology for Sustainable Energy ; 4.-9. Juli 2010, Obergurgl, Austria,2010 -
Reduced conductivity in poly(3,4-ethylenedioxythiophen)-poly(styrene sulfonate) and indium tin oxide nanocomposite for low indium tin oxide contentIn: Journal of Applied Physics, Jg. 105, 2009, Nr. 5, S. 054318
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Electronic States at the Dielectric/Semiconductor Interface in Organic Field Effect TransistorsIn: Physica Status Solidi (A): Applications and Materials Science, Jg. 205, 2008, Nr. 3, S. 475 – 487
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Formation of metallic indium-tin phase from indium-tin-oxide nanoparticles under reducing conditions and its influence on the electrical propertiesIn: Journal of Applied Physics, Jg. 104, 2008, Nr. 3, 034501
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The role of Ca traces in the passivation of silicon dioxide dielectrics for electron transport in pentacene organic field effect transistorsIn: Journal of Applied Physics, Jg. 104, 2008, Nr. 5, S. 054505
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Organic CMOS-Technology by Interface TreatmentIn: Organic field-effect transistors V / Organic field-effect transistors V : 13 - 15 August 2006, San Diego, California, USA / Bao, Zhenan (Hrsg.). Bellingham: SPIE, 2006, S. 63360S
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Druckbare Intelligenz?In: Thema Forschung, 2006, Nr. 2, S. 64 – 66
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Complementary organic field effect transistors by ultraviolet dielectric interface modificationIn: Applied Physics Letters, Jg. 89, 2006, Nr. 18, S. 182105
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Complementary inverter based on interface doped pentaceneIn: Applied Physics Letters (APL), Jg. 87, 2005, Nr. 11, S. 113505
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Spectroscopic ellipsometry on opaline photonic crystalsIn: Optics Communications, Jg. 246, 2005, Nr. 1-3, S. 1 – 7
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Charge-carrier trapping in polyfluorene-type conjugated polymersIn: Journal of Applied Physics, Jg. 98, 2005, Nr. 2, S. 024101
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A pentacene ambipolar transistor : experiment and theoryIn: Journal of Applied Physics, Jg. 98, 2005, Nr. 8, S. 084511
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Sunlight stability of organic light-emitting diodesIn: Journal of Applied Physics, Jg. 97, 2005, Nr. 12, S. 124501
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Preparation-induced F-centre transformation in BaFBr:Eu2+In: Journal of Physics D: Applied Physics, Jg. 37, 2004, Nr. 17, S. 2352 – 2357
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Cross-Linked Liquid-Crystalline Materials : A Possible Strategy to Ordered Organic SemiconductorsIn: Chemistry of Materials, Jg. 16, 2004, Nr. 22, S. 4286 – 4291
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Highly Efficient Energy Transfer to a Novel Organic Dye in OLED DevicesIn: Synthetic Metals, Jg. 146, 2004, Nr. 1, S. 11 – 15
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Light Emission from a Polymer TransistorIn: Applied Physics Letters, Jg. 84, 2004, Nr. 3, S. 428 – 430
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Electronic Traps in Organic Transport LayersIn: Physica Status Solidi (A): Applications and Materials Science, Jg. 201, 2004, Nr. 6, S. 1215 – 1235
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Thermally Stimulated Luminescence Versus Thermally Stimulated Current in Organic SemiconductorsIn: Journal of Non-Crystalline Solids, Jg. 338-340, 2004, S. 626 – 629
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n-Type Organic Field-Effect Transistor Based on Interface-Doped PentaceneIn: Applied Physics Letters, Jg. 85, 2004, Nr. 19, S. 4499 – 4501
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Thermal Detection of Trapped Charged Carriers in Organic Transport MaterialsIn: Organic light-emitting materials and devices VI / Organic light-emitting materials and devices VI : 8 - 10 July 2002, Seattle, Washington, USA / Kafafi, Zakya H. (Hrsg.). Bellingham: SPIE, 2003, S. 164 – 171
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Light Emitting Field-Effect Transistor : Simple Model and Underlying Functional MechanismsIn: Organic field effect transistors II / Organic Field Effect Transistors II, 3 - 4 August 2003, San Diego, California, USA / Dimitrakopoulos, Christos D. (Hrsg.). Bellingham: SPIE, 2003, S. 101 – 111
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Distribution of Occupied States in Doped Organic Hole Transport MaterialsIn: Synthetic Metals, Jg. 126, 2002, Nr. 1, S. 87 – 95
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Trap Engineering in Organic Hole Transport MaterialsIn: Journal of Applied Physics, Jg. 89, 2001, Nr. 10, S. 5559 – 5563
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Tris(Dibenzoylmethane)(Monophenanthroline)Europium(III) Based Red Emitting Organic Light Emitting DiodesIn: Journal of Applied Physics, Jg. 90, 2001, Nr. 10, S. 5357
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Photoluminescence properties of nanocrystalline Y2O3 : Eu3+ in different environmentsIn: Scripta Materialia, Jg. 44, 2001, Nr. 8-9, S. 1213 – 1217
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Luminescence Properties of Nanocrystalline Y2O3:Eu3+ in Different Host MaterialsIn: Journal of Applied Physics, Jg. 89, 2001, Nr. 3, S. 1679 – 1686
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Confinement of CdSe Nanoparticles Inside MCM-41In: Advanced Materials, Jg. 12, 2000, Nr. 14, S. 1050 – 1055
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Modulated Photoconductivity of High-Purity and Carbon-Doped beta-Rhombohedral BoronIn: Journal of Solid State Chemistry, Jg. 154, 2000, Nr. 1, S. 93 – 100
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Photoluminescence and Steady-State Interband Photoconductivity of High-Purity beta-Rhombohedral BoronIn: Journal of Solid State Chemistry, Jg. 154, 2000, Nr. 1, S. 68 – 74
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Interband Transitions and Optical Phonons of B48Al3C2In: Journal of Solid State Chemistry, Jg. 154, 2000, Nr. 1, S. 75 – 78
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IR-Active Phonons and Structure Elements of Isotope-Enriched Boron CarbideIn: Journal of Solid State Chemistry, Jg. 154, 2000, Nr. 1, S. 79 – 86
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Interband Transitions, IR-Active Phonons, and Plasma Vibrations of Some Metal HexaboridesIn: Journal of Solid State Chemistry, Jg. 154, 2000, Nr. 1, S. 87 – 92
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Structural Defects of Some Icosahedral Boron-Rich Solids and Their Correlation with the Electronic PropertiesIn: Journal of Solid State Chemistry, Jg. 154, 2000, Nr. 1, S. 61 – 67
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On the Reliability of the Raman Spectra of Boron-Rich SolidsIn: Journal of Alloys and Compounds, Jg. 291, 1999, Nr. 1-2, S. 28 – 32
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Correlation between Structural Defects and Electronic Properties of Icosahedral Boron-Rich SolidsIn: Journal of Physics: Condensed Matter, Jg. 11, 1999, Nr. 35, S. 6803 – 6813
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Quantum-Confined Gallium Nitride in MCM-41In: Advanced Materials, Jg. 11, 1999, Nr. 17, S. 1444 – 1448
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Interband Critical Points of Some Icosahedral Boron-Rich SolidsIn: Journal of Solid State Chemistry, Jg. 133, 1997, Nr. 1, S. 132 – 139
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Electronic transport in p-type and n-type /spl beta/-rhombohedral boronIn: Thermoelectrics: Proceedings / 16th International Conference on Thermoelectrics ; ICT '97 ; 26-29 Aug. 1997. Piscataway: IEEE, 1997, S. 219 – 223
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Evidence of the Relationship of the Electronic Properties of Icosahedral Boron-Rich Solids and Icosahedral QuasicrystalsIn: Journal of Solid State Chemistry, Jg. 133, 1997, Nr. 1, S. 160 – 163
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IR Active Phonon Spectra of B-C-Al Compounds with Boron Carbide StructureIn: Journal of Solid State Chemistry, Jg. 133, 1997, Nr. 1, S. 254 – 259
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Interaction of Optically Excited Carriers with Intraicosahedral PhononsIn: Journal of Solid State Chemistry, Jg. 133, 1997, Nr. 1, S. 125 – 128
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Evidence of the Superposition of Drude Type and Hopping Type Transport in Boron-Rich SolidsIn: Journal of Solid State Chemistry, Jg. 133, 1997, Nr. 1, S. 335 – 341
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A Unified Picture for Icosahedral Cluster Solids in Boron-Based and Aluminum-Based CompoundsIn: Journal of Solid State Chemistry, Jg. 133, 1997, Nr. 1, S. 302 – 309
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On the Electronic Properties of beta-rhombohedral Boron Interstitially Doped with 3d Transition Metal AtomsIn: Journal of Alloys and Compounds, Jg. 262-263, 1997, S. 372 – 380
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FT Raman Spectroscopy of Some Metal HexaboridesIn: Journal of Solid State Chemistry, Jg. 133, 1997, Nr. 1, S. 264 – 268
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The Complete Optical Spectrum of beta-Rhombohedral BoronIn: Journal of Solid State Chemistry, Jg. 133, 1997, Nr. 1, S. 129 – 131
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On the Electronic Properties of Icosahedral QuasicrystalsIn: Solid State Communications, Jg. 97, 1996, Nr. 2, S. 103 – 107
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On the Dynamical Conductivity in Icosahedral Boron-Rich SolidsIn: Journal of Physics: Condensed Matter, Jg. 8, 1996, Nr. 39, S. 7263 – 7275