Dr.-Ing. Wolfgang Brockerhoff

Anschrift
Lotharstr. 55 (LT/ZHO)
47057 Duisburg
Raum
LT 205

Funktionen

  • Akad. Direktor/in, Bauelemente der Höchstfrequenz-Elektronik

  • Gruppe der akademischen Mitarbeiterinnen und Mitarbeiter, Fakultätsrat

Die folgenden Publikationen sind in der Online-Universitätsbibliographie der Universität Duisburg-Essen verzeichnet. Weitere Informationen finden Sie gegebenenfalls auch auf den persönlichen Webseiten der Person.

    Artikel in Zeitschriften

  • Blekker, Kai; Münstermann, Benjamin; Matiss, Andreas; Do, Quoc-Thai; Regolin, Ingo; Brockerhoff, Wolfgang; Prost, Werner; Tegude, Franz-Josef
    High-Frequency Measurements on InAs Nanowire Field-Effect Transistors using Coplanar Waveguide Contacts
    In: IEEE Transactions on Nanotechnology Jg. 9 (2010) Nr. 4, S. 432 - 437
    ISSN: 1536-125X; 1941-0085
  • Ehrich, Silja; Driesen, Jörn; Neumann, Stefan; Topaloglu, Serkan; Brockerhoff, Wolfgang; Tegude, Franz-Josef;
    Investigation of the rf-noise behaviour of InP based DHBT with InGaAs base and GaAsSb base
    Noise in Devices and Cirquits II; Maspalomas, Spain; 26 - 28 May 2004,
    In: Proceedings of SPIE Jg. 5470 (2004) S. 164 - 172
    ISSN: 0277-786X; 1996-756X
  • Schlothmann, Bernd Josef; Bertenburg, Ralf M.; Agethen, Michael; Velling, Peter; Brockerhoff, Wolfgang; Tegude, Franz-Josef;
    Two-dimensional physical simulation of InGaAs/InP heterostructure bipolar transistors
    6th International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, EXMATEC 2002; Budapest; Hungary; 26 - 29 May 2002,
    In: Physica Status Solidi (C): Current Topics in Solid State Physics (2003) Nr. 3, S. 922 - 927
    ISSN: 1610-1634; 1610-1642; 1862-6351
  • Reuter, Ralf; Agethen, Michael; Auer, Uwe; van Waasen, Stefan; Peters, Dirk; Brockerhoff, Wolfgang
    Investigation and modeling of impact lonization with regard to the RF and noise behavior of HFET
    In: IEEE Transactions on Microwave Theory and Techniques Jg. 45 (1997) Nr. 6, S. 977 - 983
    ISSN: 0018-9480; 1557-9670
  • Daumann, Walter; Ellrodt, P.; Brockerhoff, Wolfgang; Bertenburg, Ralf M.; Reuter, Ralf; Auer, Uwe; Molls, Wolfgang; Tegude, Franz-Josef
    InAlAs/InGaAs/InP HFET with suppressed impact ionization using dual-gate cascode-devices
    In: IEEE Electron Device Letters Jg. 17 (1996) Nr. 10, S. 488 - 490
    ISSN: 0741-3106; 1558-0563
  • Ellrodt, P; Brockerhoff, Wolfgang; Tegude, Franz-Josef
    Investigation of leakage current behaviour of Schottky gates on InAlAs/InGaAs/InP HFET structures by a 1D model
    In: Solid State Electronics Jg. 38 (1995) Nr. 10, S. 1775 - 1780
    ISSN: 0038-1101; 1879-2405
  • Brockerhoff, Wolfgang; Ellrodt, P.; Güldner, W.; Heime, Klaus; Tegude, Franz-Josef
    Numerical analysis of InP-JFET by use of a quasi 2D-model
    In: Microelectronic Engineering Jg. 19 (1992) Nr. 1-4, S. 39 - 42
    ISSN: 0167-9317; 1873-5568
  • Bode, Michael; Schubert, Jurgen; Zander, Willi; Kraus, Jörg; Peters, Dirk; Brockerhoff, Wolfgang; Tegude, Franz-Josef
    On-wafer microwave measurement setup for investigations on hemt's and high tc Superconductors at Cryogenic Temperatures Down to 20 K
    In: IEEE Transactions on Microwave Theory and Techniques Jg. 40 (1992) Nr. 12, S. 2325 - 2331
    ISSN: 1557-9670; 0018-9480
  • Reemtsma, J.-H.; Meschede, Herbert; Brockerhoff, Wolfgang; Heime, Klaus; Schlapp, Winfried; Weimann, Guenter W.
    Properties of p-type heterostructure field effect transistors at cryogenic temperatures
    In: Surface Science Jg. 228 (1990) Nr. 1-3, S. 472 - 475
    ISSN: 0039-6028; 1879-2758
  • Makowitz, Rainer; Brockerhoff, Wolfgang
    Simulation of short‐channel and surface effects in submicron GaAs MESFETs
    In: European Transactions on Telecommunications Jg. 1 (1990) Nr. 4, S. 401 - 409
    ISSN: 1541-8251; 1124-318X
  • Brockerhoff, Wolfgang; Versteegen, Michael; Bertenburg, Ralf M.; Seiler, Ulrich; Heime, Klaus
    Simulation of surface effects in planar GaAs MESFET structures by use of a quasi‐2D model
    In: European Transactions on Telecommunications Jg. 1 (1990) Nr. 4, S. 389 - 392
    ISSN: 1541-8251; 1124-318X
  • Brockerhoff, Wolfgang; Prost, Werner; Meschede, Herbert; Kraus, Jörg; Heime, Klaus; Weimann, Guenter W.; Schlapp, Winfried
    d.c.- and r.f.-characterisation of conventional and superlattice heterostructure field-effect transistors at low temeperatures
    In: Solid State Electronics Jg. 33 (1990) Nr. 11, S. 1393 - 1400
    ISSN: 0038-1101; 1879-2405
  • Brockerhoff, Wolfgang; Meschede, Herbert; Prost, Werner; Heime, Klaus; Weimann, Günter; Schlapp, Winfried
    RF Measurements and Characterization of Heterostructure Field-Effect Transistors at Low Temperatures
    In: IEEE Transactions on Microwave Theory and Techniques Jg. 37 (1989) Nr. 9, S. 1380 - 1388
    ISSN: 1557-9670; 0018-9480
  • Prost, Werner; Brockerhoff, Wolfgang; Heime, Klaus; Ploog, Klaus; Schlapp, Winfried; Weimann, Günter W.; Morkoç, Hadis D.
    Gate-Voltage Dependent Transport Measurements on Heterostructure Field-Effect Transistors
    In: IEEE Transactions on Electron Devices Jg. 33 (1986) Nr. 5, S. 646 - 650
    ISSN: 0018-9383; 1557-9646
  • Daembkes, Heinrich; Brockerhoff, Wolfgang; Heime, Klaus; Cappy, Alain
    Improved Short-Channel GaAs MESFET's by Use of Higher Doping Concentration
    In: IEEE Transactions on Electron Devices Jg. 31 (1984) Nr. 8, S. 1032 - 1037
    ISSN: 1557-9646; 0018-9383
  • Dämbkes, Heinrich; Brockerhoff, Wolfgang; Heime, Klaus; Ploog, Klaus H.; Weimann, Günter W.; Schlapp, Winfried
    Optimisation of modulation-doped heterostructures for TEGFET operation at room temperature
    In: Electronics Letters Jg. 20 (1984) Nr. 15, S. 615 - 617
    ISSN: 0013-5194; 1350-911X
  • Beiträge in Sammelwerken und Tagungsbänden

  • Reuter, Ralf; van Waasen, Stefan; Peters, Dirk; Auer, Uwe; Brockerhoff, Wolfgang; Tegude, Franz-Josef
    A new temperature noise model of HFET with special emphasis on a gate-leakage current and investigation of the bias dependence of the equivalent noise sources
    In: 25th European Microwave Conference: Volume 1 / EuMC 1995; Bologna, Italy; 4 September 1995 2015, S. 205 - 210
    ISBN: 9780000000002
  • Peters, Dirk; Daumann, Walter; Brockerhoff, Wolfgang; Reuter, Ralf; Koenig, Eric T.; Tegude, Franz-Josef
    Direct calculation of the HBT small-signal equivalent circuit with special emphasize to the feedback capacitance
    In: 25th European Microwave Conference: Volume 2 / EuMC 1995; Bologna, Italy; 4 September 1995 2015, S. 1032 - 1036
    ISBN: 9780000000002
  • Münstermann, Benjamin; Blekker, Kai; Tchegho, Anselme; Brockerhoff, Wolfgang; Tegude, Franz-Josef
    Design of low-power RTD-based-VCOs for Ka-band application
    In: German Microwave Conference Digest of Papers / GeMiC 2010; Berlin, Germany; 15 - 17 March 2010 2010, S. 39 - 42
    ISBN: 978-1-4244-4933-0; 978-3-9812-6681-8
  • Münstermann, Benjamin; Matiss, Andreas; Brockerhoff, Wolfgang; Tegude, Franz-Josef
    Large-signal performance of resonant tunnelling diodes in K-Band oscillators
    In: Proceedings of the 38th European Microwave Conference / EuMC 2008; Amsterdam, Netherlands; 27 - 31 October 2008 2008, S. 1469 - 1472
    ISBN: 978-2-87487-006-4
  • Matiss, Andreas; Poloczek, Artur; Brockerhoff, Wolfgang; Prost, Werner; Tegude, Franz-Josef
    Monostable-bistable threshold logic elements in a fully complementary optical receiver circuit for high frequency applications
    In: 20th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM 2008; Versailles, France; 25 - 29 May 2008 2008, S. 4702921
    ISBN: 978-1-4244-2258-6; 978-1-4244-2259-3
  • Nannen, Ingo; Poloczek, Artur; Matiss, Andreas; Brockerhoff, Wolfgang; Regolin, Ingo; Tegude, Franz-Josef
    INP-hemt-tia with differential optical input using vertical high topology pin-diodes
    In: 19th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM '07; 14 - 18 May 2007; Matsue, Japan 2007, S. 107 - 109
    ISBN: 1-4244-0874-1
  • Matiss, Andreas; Poloczek, Artur; Brockerhoff, Wolfgang; Prost, Werner; Tegude, Franz-Josef
    Large-signal analysis and ac modelling of sub-micron resonant tunnelling diodes
    In: 2nd European Microwave Integrated Circuits Conference: Conference Proceedings / EuMIC 2007; Munich, Germany; 8 - 12 October 2007 2007, S. 207 - 210
    ISBN: 978-2-87487-002-6
  • Matiss, Andreas; Poloczek, Artur; Stöhr, Andreas; Brockerhoff, Wolfgang; Prost, Werner; Tegude, Franz-Josef
    Sub-nanosecond pulse generation using resonant tunneling diodes for impulse radio
    In: IEEE International Conference on Ultra-Wideband 2007 / ICUWB; 24 - 27 September 2007; Singapore 2007, S. 354 - 359
    ISBN: 978-1-4244-0520-6; 978-1-4244-0521-3
  • Matiss, Andreas; Brockerhoff, Wolfgang; Poloczek, Artur; Prost, Werner; Tegude, Franz-Josef
    Low-temperature DC and RF measurement and modelling of InGaAs-InAlAs resonant tunneling diodes down to 15 K
    In: Proceedings of the 1st European Microwave Integrated Circuits Conference / EuMIC 2006; Manchester; United Kingdom; 10 - 13 September 2006 2006, S. 344 - 347
    ISBN: 2-9600551-8-7
  • Ehrich, Silja; Bertenburg, Ralf M.; Agethen, Michael; Brennemann, Andreas; Brockerhoff, Wolfgang; Tegude, Franz-Josef
    A consistent and scalable PSPICE HFET-model for DC- and S-parameter-simulation
    In: IEEE International Conference on Microelectronic Test Structures / ICMTS 2002; Cork, Ireland; 8 - 11 April 2002 2003, S. 67 - 70
    ISBN: 0-7803-7464-9
  • Agethen, Michael; Schüller, Silja; Velling, Peter; Brockerhoff, Wolfgang; Tegude, Franz-Josef
    Consistent small-signal and rf-noise parameter modelling of carbon doped InP/InGaAs HBT
    In: International IEEE Microwave Symposium Digest / MTT-S 2001; Phoenix, United States; 20 - 25 May 2001 Jg. 1 2001, S. 1765 - 1768
    ISBN: 0-7803-6538-0
  • Brennemann, Andreas; Bushehri, E.; Agethen, Michael; Bertenburg, Ralf M.; Brockerhoff, Wolfgang; Staroselsky, Victor I.; Bratov, V.; Schlichter, T.; Tegude, Franz-Josef
    11-stage ring oscillator with nonlinear negative feedback for high speed digital applications
    In: International Conference on Indium Phosphide and Related Materials: Conference Proceedings / Williamsburg, USA; 14 -18 May 2000 2000, S. 577 - 580
    ISBN: 0-7803-6320-5
  • Auer, Uwe; Prost, Werner; Brockerhoff, Wolfgang; Tegude, Franz-Josef
    Consistent physical model for the gate-leakage and breakdown in InAlAs/InGaAs HFET's
    In: Proceedings of the 11th International Conference on Indium Phosphide and Related Materials / IPRM`99; Davos, Switz; 16 -20 May 1999 1999, S. 439 - 442
    ISBN: 0-7803-5562-8
  • Breder, T.; Reuter, Ralf; Daumann, Walter; Schreurs, Dominique M.; van der Zanden, Koen; Brockerhoff, Wolfgang; Tegude, Franz-Josef
    A new consistent rf-and noise model with special emphasis on impact ionisation for dual-gate HFET in cascode configuration
    In: 28th European Microwave Conference / EuMC 1998; Amsterdam, Netherlands; 5 - 9 October 1998 Jg. 1 1998, S. 323 - 327
  • Auer, Uwe; Brockerhoff, Wolfgang; Prost, Werner; Tegude, Franz-Josef
    Analytic simulation of impact ionization in InAlAs/InGaAs HFET's
    In: Proceedings of the 10th International Conference on Indium Phosphide and Related Materials / IPRM`98, Tsukuba, Japan, 11.05.1998 - 15.05.1998 1998, S. 659 - 662
  • Prost, Werner; Auer, Uwe; Pacha, Christian; Brennemann, Andreas; Janßen, Guido; Bertenburg, Ralf M.; Brockerhoff, Wolfgang; Bushehri, E.; Goser, Karl F.; Tegude, Franz-Josef
    InP-based HFET's and RTD's for high speed digital circuitry
    In: Conference Proceedings of the International Symposium on Signals, Systems and Electronics / ISSSE'98; Pisa, Italy; 29 September - 2 October 1998 1998, S. 45 - 49
    ISBN: 0-7803-4900-8
  • Brennemann, Andreas; Bushehri, E.; Daumann, Walter; Agethen, Michael; Bertenburg, Ralf M.; Brockerhoff, Wolfgang; Staroselsky, Victor I.; Bratov, V.; Schlichter, T.; Tegude, Franz-Josef
    InP-based logic gates for low power monolithic optoelectronic circuits
    In: Proceedings of the IEEE International Conference on Electronics, Circuits and Systems / ICECS'98 - Surfing the Waves of Science and Technology; Lisboa, Portugal; 7 - 10 September 1998 Jg. 3 1998, S. 393 - 396
    ISBN: 0-7803-5008-1
  • Tegude, Franz-Josef; Daumann, Walter; Reuter, Ralf; Brockerhoff, Wolfgang
    InAlAs/InGaAs/InP dual-gate-HFET's : New aspects and properties
    In: International Conference on Indium Phosphide and Related Materials 1997: Conference Proceedings / IPRM`97; Cape Cod, USA; 11-15 May 1997 1997, S. 181 - 184
    ISBN: 0-7803-3898-7 ISSN: 1092-8669
  • Reuter, R.; Agethen, Michael; Auer, Uwe; van Waasen, Stefan; Peters, D.; Brockerhoff, Wolfgang; Tegude, Franz-Josef
    Investigation and modeling of impact ionization with regard to the RF- and noise behaviour of HFET
    In: Proceedings of the 1996 IEEE MTT-S International Microwave Symposium Digest / San Franscisco, USA; 17 - 21 June 1996 1996, S. 512178
    ISBN: 0-7803-3246-6 ISSN: 0149-645X
  • Daumann, Walter; Brockerhoff, Wolfgang; Bertenburg, Ralf M.; Reuter, Ralf; Auer, Uwe; Molls, Wolfgang; Tegude, Franz-Josef
    On the advantages of InAlAs/InGaAs/InP dual-gate-HFET's in comparison to conventional single-gate-HFET's
    In: 8th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / Schwaebisch Gmuend, Germany; 21.04.1996 - 25.04.1996 1996, S. 462 - 465
    ISBN: 0-7803-3283-0
  • Peters, D.; Brockerhoff, Wolfgang; Reuter, R.; Meschede, H.; Wiersch, A.; Becker, B.; Daumann, W.; Seiler, U.; König, U.; Tegude, Franz-Josef
    Investigation of the High-Frequency Performance of AlGaAs/GaAs HBTs Down to 20K
    In: Proceedings of Bipolar/BiCMOS Circuits and Technology Meeting / BCTM´93; Minenapolis, USA; 04.10.1993 - 05.10.1993 1993, S. 32 - 35
  • Ellrodt, P.; Brockerhoff, Wolfgang; Heedt, C.; Tegude, Franz-Josef
    Numerical investigation of leakage current of Schottky contacts on InAlAs/InGaAs/InP heterostructures
    In: Proceedings of the 23rd European Solid State Device Research Conference / ESSDERC '93; Grenoble, France; 13 - 16 September 1993 1993, S. 463 - 466
    ISBN: 2-86332-135-8
  • Peters, D.; Brockerhoff, Wolfgang; Reuter, R.; Meschede, H.; Wiersch, A.; Becker, B.; Daumann, W.; Seiler, U.; König, U.; Tegude, Franz-Josef
    RF-Characterization of AlGaAs/GaAs HBT Down to 20K
    In: Proceedings of the '20th International Symposium on GaAs and Related Compounds / GaAs RC´93; Freiburg, Germany; 29.08.1993 - 02.09.1993 1993, S. 177 - 182
  • Brockerhoff, Wolfgang; Ellrodt, P.; Güldner, W.; Heime, Klaus; Tegude, Franz-Josef
    Numerical analysis of InP-JFET by use of a Quasi 2D-model
    In: Proceedings of the 22nd European Solid State Device Research Conference / ESSDERC '92, 14-17 September 1992, Leuven, Belgium 1992, S. 39 - 42
    ISBN: 0444894780 ISSN: 1930-8876
  • Meschede, H.; Reuter, R.; Peters, D.; Kraus, J.; Bertenburg, Ralf M.; Brockerhoff, Wolfgang; Tegude, Franz-Josef
    On-Wafer RF Measurement Setup for the Characterization of HEMT's and High TC Superconductors at Very Low Temperatures Down to 20K
    In: Proceedings of IEEE International Microwave Symposium (MTT-S) / Albuquerque, USA; 01.06.1992 - 05.06.1992 1992, S. 1439 - 1442
  • Meschede, H.; Albers, J.; Reuter, R.; Kraus, J.; Peters, D.; Brockerhoff, Wolfgang; Tegude, Franz-Josef
    RF Investigations on HEMT's at Cryogenic Temperatures Down to 20K using an On-Wafer Microwave Measurement Setup
    In: Proceedings of the 22nd European Microwave Conference / EuMC`92; Helsinki, Finland; 24.08.1992 - 27.08.1992 1992, S. 151 - 156
  • Brockerhoff, Wolfgang; Stöhr, Andreas; Prost, Werner; Meschede, H.; Heime, K.
    Dispersion und Arbeitspunktabhängigkeit des Ausgangswiderstandes in Heterostruktur-Feldeffekttransistoren
    In: ITG-Fachtagung "Heterostruktur-Bauelemente" / Schwäbisch Gmünd, Germany; 25.04.1990 - 27.04.1990 1990, S. 267 - 271
  • Meschede, H.; Kraus, J.; Bertenburg, Ralf M.; Brockerhoff, Wolfgang; Prost, Werner; Heime, K.; Nickel, H.; Schlapp, W.; Lösch, R.
    Submicron pseudomorphic Al0.2Ga0.8As/InGaAs-HFET made by Conventional Optical Lithography for Microwave Circuit Applications above 100GHz
    In: Proceedings of the '20th European Solid State Device Research Conference / ESSDERC`90; Nottingham, U.K.; 10.09.1990 - 13.09.1990 1990, S. 105 - 108
  • Kraus, J.; Meschede, H.; Brockerhoff, Wolfgang; Prost, Werner; Heime, K.; Nickel, H.; Lösch, R.; Schlapp, W.
    Submikrometer Al0.2Ga0.8As/In0.25Ga0.75As Mehrfinger-HFET für Mikrowellenschaltungen über 100 GHz hergestellt mit optischer Kontaktlithographie
    In: Proceedings ITG-Fachtagung "Heterostruktur-Bauelemente" / Schwaebisch Gmuend, Germany; 25.04.1990 - 27.04.1990 1990, S. 29 - 30
  • Prost, Werner; Brockerhoff, Wolfgang; Heuken, M.; Kugler, S.; Heime, Klaus; Schlapp, W.; Weimann, G.
    Shallow and Deep Impurity Investigations : The Important Step Towards a Microwave Field-Effect Transistor Working at Cryogenic Temperatures
    In: Properties of Impurity States in Superlattice Semiconductors / Fong, C. Y.; Batra, Inder P.; Ciraci, S. (Hrsg.) 1988, S. 135 - 146
    ISBN: 978-1-4684-5555-7; 978-1-4684-5553-3
  • Prost, Werner; Brockerhoff, Wolfgang; Heime, Klaus; Schlapp, W.; Weimann, Günter W.
    Device performance and transport properties of HFETs at low temperatures
    In: Proceedings of the 14th International Symposium on GaAs and Related Compounds / GaAs RC´87; Heraklion, Greece; 28.09.1987 - 01.10.1987 1987, S. 681 - 684
  • Steiner, K.; Seiler, U.; Brockerhoff, Wolfgang; Heime, Klaus; Kuphal, E.
    High Transconductance Submicron Self-Aligned InGaAs JFETs
    In: Proceedings of the 14th International Symposium on GaAs and Related Compounds / GaAs RC´87; Heraklion, Greece; 28.09.1987 - 01.10.1987 1987, S. 721 - 724
  • Prost, Werner; Brockerhoff, Wolfgang; Heime, Klaus; Ploog, Klaus H.; Schlapp, Winfried; Weimann, Günter W.; Morkoç, Hadis D.
    Application of the Magnetotransconductance Mobility Measurements Method to Two-Dimensional Electron Gas FETs
    In: Semiconductor Quantum Well Structures and Superlattices: Papers / MRS-Europe Spring Meeting (Symposium 3); 13-15 Mai 1985; Strasbourg/France 1986, S. 91 - 96
    ISBN: 2868830153
  • Schmitt, R.; Steiner, Klaus; Kaufmann, Leon Marcel Freddy; Brockerhoff, Wolfgang; Heime, Klaus; Kuphal, Eckart
    InGaAs-JFETs with p+-Gates Diffused from Spin-on Films for Ka-Band Operation
    In: Proceedings of the 12th International Symposium on GaAs and Related Compounds / GaAs RC´85; Karuizawa, Japan; 01.09.1985 1986, S. 619 - 624
    ISBN: 0854981705
  • Brockerhoff, Wolfgang; Dämbkes, Heinrich; Heime, Klaus
    Numerical Investigation of GaAs MESFETs and InGaAs JFETs and Comparison with Experimental Results
    In: Proceedings of the 3rd International Workshop on Physics of Semiconductor Devices / Madras, India; 27.11.1985 - 02.12.1985 1985, S. 23 - 30
  • Heime, Klaus; Dämbkes, Heinrich; Brockerhoff, Wolfgang
    GaAs MESFETs with a Highly Doped Channel
    In: International Conference on Solid State Devices and Materials / ICSSDM´84; Kobe, Japan; 30.08. - 01.09.1984 1984, S. 375 - 378
    ISBN: 4930813077
  • Daembkes, Heinrich; Brockerhoff, Wolfgang; Heime, Klaus
    GaAs-MESFETs with Highly Doped (1018cm-3) Channels : An Experimental and Numerical Investigation
    In: Proceedings of the International Electron Device Meeting / IEDM`83; Washington D.C., USA; 05.12.1983 - 07.12.1983 1983, S. 621 - 624
    ISSN: 0163-1918
  • Daembkes, Heinrich; Brockerhoff, Wolfgang; Heime, Klaus
    Improved Performance of Micron and Submicron Gate GaAs-MESFETs due to High Electron Concentrations (n = 1018cm-3) in the Channel
    In: Proceedings of the IEEE GaAs IC Symposium / GaAs IC´83; Phoenix, USA; 01.10.1983 1983, S. 153 - 156
  • Lexikoneinträge

  • Agethen, Michael; Reuter, R.; Breder, T.; Bertenburg, Ralf M.; Brockerhoff, Wolfgang; Tegude, Franz-Josef
    High Frequency Noise
    In: Wiley Encyclopedia of Electrical and Electronics Engineering / Webster, John G. (Hrsg.) Jg. 14 1999, S. 392 - 410
    ISBN: 9780471139553
  • Vorträge

  • Matiss, A.; Janßen, Guido; Bertenburg, Ralf M.; Brockerhoff, Wolfgang; Tegude, Franz-Josef;
    Optical Sensitivity of a Monolithic Integrated InP PIN-HEMT-HBT Transimpedance Amplifier
    European Microwave Workshops and Chort Courses, EuMW`04; Amsterdam, The Netherlands; 11.10.2004 - 15.10.2004,
    Amsterdam, The Netherlands (2004)
  • Ehrich, Silja; Agethen, Michael; Brockerhoff, Wolfgang; Tegude, Franz-Josef;
    RF- and Noise Modeling of Semiconductor Devices based on InP
    ITG Fachtagung 2003,
    (2003)
  • Ehrich, S.; Agethen, Michael; Velling, Peter; Brennemann, Andreas; Bertenburg, Ralf M.; Brockerhoff, Wolfgang; Tegude, Franz-Josef;
    Scaling of Small-Signal and RF-Noise Parameters with Respect to the Emitter-Area of Single HBT based on InP
    14th Workshop on Semiconductor Modeling and Simulation of Electron Devices (MSED), Barcelona, Spain, 16.10.2003 - 17.10.2003,
    Barcelona, Spain (2003)
  • Ehrich, S.; Agethen, Michael; Brockerhoff, Wolfgang; Tegude, Franz-Josef;
    A Consistent PSPICE-Model for InP HBT
    13th Workshop on Physical Simulation of Semiconductor Devices (PSSD), Ilkley, West Yorkshire, U.K., 25.03.2002 - 26.03.2002,
    Ilkley, U.K. (2002)
  • Schlothmann, B.; Bertenburg, Ralf M.; Agethen, Michael; Velling, Peter; Brockerhoff, Wolfgang; Tegude, Franz-Josef;
    RF-Simulation of InGaAs/InP Heterostructure Bipolar Transistors
    13th Workshop on Physical Simulation of Semiconductor Devices (PSSD), Ilkley, West Yorkshire, U.K., 25.03.2002 - 26.03.2002,
    Ilkley, U.K. (2002)
  • Ehrich, S.; Agethen, Michael; Bertenburg, Ralf M.; Brennemann, Andreas; Brockerhoff, Wolfgang; Tegude, Franz-Josef;
    A Consistent and Scalable PSPICE Compound Semiconductor HFET Model for DC- and S-Parameter Simulation
    9th European GaAs and other Semiconductor Application Symposium (GAAS AS), London, U.K., 24.09.2001 - 25.09.2001,
    London, U.K. (2001)
  • Schüller, S.; Bertenburg, Ralf M.; Agethen, Michael; Brennemann, Andreas; Brockerhoff, Wolfgang; Tegude, Franz-Josef;
    A New Consistent and Scalable PSPICE Model for Enhancement and Depletion-Type HFET
    11th Conference and Exhibition on Microwaves, Radio Communication and Electromagnetic Compatibility (MIOP), Stuttgart, Germany, 08.05.2001 - 10.05.2001,
    Stuttgart, Germany (2001)
  • Agethen, Michael; Schüller, S.; Velling, Peter; Brockerhoff, Wolfgang; Tegude, Franz-Josef;
    Carbon Doped InP/InGaAs HBT : Consistent Small_Signal and RF-Noise Modelling and Characterization
    Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Cagliari, Italy, 27.05.2001 - 30.05.2001,
    Cagliari, Italy (2001)
  • Agethen, Michael; Breder, T.; Reuter, R.; Brockerhoff, Wolfgang; Tegude, Franz-Josef;
    A New Optimization Strategy Based on the Theory of Evolution for the RF-Modeling of HFET
    International Workshop on Exp. Based FET Device Modell. & Rel. Nonlin. Circuit Design; Kassel, Germany; 17.07.1997 - 18.07.1997,
    Kassel, Germany (1997)
  • Reuter, Ralf; Agethen, Michael; Breder, T.; van Waasen, Stefan; Brockerhoff, Wolfgang; Tegude, Franz-Josef;
    A New RF- and Noise Model with Special Emphasis on Impact Ionization for HFET
    Conference and Exhibition on Microwaves, Radio Communication and Electromagnetic Compatibility; MIOP 1997; Sindelfingen, Germany; 22.04.1997 - 24.04.1997,
    Sindelfingen, Germany (1997)
  • Agethen, Michael; Reuter, Ralf; van Waasen, Stefan; Brockerhoff, Wolfgang; Tegude, Franz-Josef;
    Theory of Evolution : New Optimization Strategies for the Modeling of HFET-RF-Noise-Parameters
    Conference and Exhibition on Microwaves, Radio Communication and Electromagnetic Compatibility; MIOP 1997; Sindelfingen, Germany; 22.04.1997 - 24.04.1997,
    Sindelfingen, Germany (1997)
  • Daumann, W.; Reuter, R.; Agethen, Michael; Auer, Uwe; Brockerhoff, Wolfgang; Bertenburg, Ralf M.; Tegude, Franz-Josef;
    Fabrication and High Frequency Analysis of InAlAs/InGaAs/InP Dual-Gate-HFETs with Special Emphasis to Impact Ionization
    European Heterostructure Technology Workshop (HETECH); Lille, France; 15.09.1996 - 17.09.1996,
    Lille, France (1996)
  • Peters, D.; Daumann, W.; Brockerhoff, Wolfgang; Reuter, Ralf; Koenig, E.; Tegude, Franz-Josef;
    New Direct Parameter Extraction Technique for Heterojunction Bipolar Transistors Using an Extended Equivalent Circuit
    International Workshop on Semiconductor Characterization, Gaithersburg, USA, 30.01.1995 - 02.02.1995,
    Gaithersburg, USA (1995)
  • Ellrodt, P.; Brockerhoff, Wolfgang; Tegude, Franz-Josef;
    Simulation of Gate Leakage due to Impact Ionization in InAlAs/InGaAs-HFET
    4th Int. Seminar on Simulation of Devices and Technologies (ISSDT), Kruger Nat. Park, South Africa, 15.11.1995 - 17.11.1995,
    Kruger Nat. Park, South Africa (1995)
  • Brockerhoff, Wolfgang; Bertenburg, Ralf M.; Meschede, H.; Koster, Norbert; Koßlowski, S.; Heime, K.;
    Optimierung von Feldeffekttransistoren aus III-V-Halbleitern für den Einsatz in monolithisch integrierten Breitbandverstärkern
    Conference and Exhibition on Microwaves, Radio Communication and Electromagnetic Compatibility (MIOP); Stuttgart, Germany; 24.04.1990 - 26.04.1990,
    Stuttgart (1990)