Dr.-Ing. Lisa Liborius
Anschrift
Lotharstr. 55 (LT)
47057 Duisburg
47057 Duisburg
Raum
LT 201
Telefax
E-Mail
Funktionen
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Wissenschaftliche/r Mitarbeiter/in, Bauelemente der Höchstfrequenz-Elektronik
Aktuelle Veranstaltungen
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WiSe 2025
Vergangene Veranstaltungen (max. 10)
Die folgenden Publikationen sind in der Online-Universitätsbibliographie der Universität Duisburg-Essen verzeichnet. Weitere Informationen finden Sie gegebenenfalls auch auf den persönlichen Webseiten der Person.
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Following Charge Carrier Transport in Freestanding Core–Shell GaN Nanowires on n-Si(111) SubstratesIn: ACS Applied Electronic Materials, Jg. 7, 2025, Nr. 8, S. 3469 – 3476DOI (Open Access)
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n+ Doped In₀.₅₃Ga₀.₄₇As Using Di-Tert-Butylsilane in a Vertical MOVPE ReactorIn: Physica Status Solidi (A) - Applications and Materials Science, Jg. 222, 2025, Nr. 22, 2500407DOI (Open Access)
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Impact of the Tip-to-Semiconductor Contact in the Electrical Characterization of NanowiresIn: ACS Omega, Jg. 9, 2024, Nr. 5, S. 5788 – 5797DOI (Open Access)
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Electrical Properties of the Base-Substrate Junction in Freestanding Core-Shell NanowiresIn: Advanced Materials Interfaces, Jg. 9, 2022, Nr. 30, 2200948DOI (Open Access)
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Tunneling-Related Leakage Currents in Coaxial GaAs/InGaP Nanowire Heterojunction Bipolar TransistorsIn: Physica Status Solidi (B): Basic Solid State Physics, Jg. 258, 2021, Nr. 2, S. 2000395DOI (Open Access)
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Hot electrons in a nanowire hard X-ray detectorIn: Nature Communications, Jg. 11, 2020, Nr. 1, S. 4729DOI (Open Access)
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Spatially controlled VLS epitaxy of gallium arsenide nanowires on gallium nitride layersIn: CrystEngComm, Jg. 22, 2020, Nr. 7, S. 1239 – 1250
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n-Doped InGaP Nanowire Shells in GaAs/InGaP Core–Shell p–n JunctionsIn: Physica Status Solidi (B): Basic Solid State Physics, Jg. 257, 2020, Nr. 2, S. 1900358DOI (Open Access)
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Process Development for Wet-Chemical Surface Functionalization of Gallium Arsenide Based NanowiresIn: Physica Status Solidi (B): Basic Solid State Physics, 2019, S. 1800678
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Toward Nanowire HBT : Reverse Current Reduction in Coaxial GaAs/InGaP n(i)p and n(i)pn Core-Multishell NanowiresIn: Physica Status Solidi (A) - Applications and Materials Science, Jg. 216, 2019, Nr. 1, S. 1800562
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Comparative analysis on resistance profiling along tapered semiconductor nanowires : Multi-tip technique versus transmission line methodIn: Journal of Physics: Condensed Matter, Jg. 29, 2017, Nr. 39, 394007
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Ohmic contacts to n-GaAs nanowiresIn: Journal of Applied Physics, Jg. 110, 2011, Nr. 1, S. 014305