Anschrift
Lotharstr. 55 (LT/ZHO)
47057 Duisburg
Raum
LT 205

Funktionen

  • Wissenschaftliche/r Mitarbeiter/in, Bauelemente der Höchstfrequenz-Elektronik

Die folgenden Publikationen sind in der Online-Universitätsbibliographie der Universität Duisburg-Essen verzeichnet. Weitere Informationen finden Sie gegebenenfalls auch auf den persönlichen Webseiten der Person.

    Artikel in Zeitschriften

  • Häuser, Patrick; Blumberg, Christian; Liborius, Lisa; Prost, Werner; Weimann, Ph.D., Nils
    Polarity-controlled AlN/Si templates by in situ oxide desorption for variably arrayed MOVPE-GaN nanowires
    In: Journal of Crystal Growth Jg. 566-567 (2021) S. 126162
    ISSN: 0022-0248; 1873-5002
  • Villani, Matteo; Clochiatti, Simone; Prost, Werner; Weimann, Nils; Oriols, Xavier
    There is Plenty of Room for THz Tunneling Electron Devices Beyond the Transit Time Limit
    In: IEEE Electron Device Letters Jg. 42 (2021) Nr. 2, S. 224 - 227
    ISSN: 1558-0563; 0741-3106
  • Liborius, Lisa; Bieniek, Jan; Poßberg, Alexander; Tegude, Franz-Josef; Prost, Werner; Poloczek, Artur; Weimann, Nils
    Tunneling-Related Leakage Currents in Coaxial GaAs/InGaP Nanowire Heterojunction Bipolar Transistors
    In: Physica Status Solidi (B): Basic Solid State Physics Jg. 258 (2021) Nr. 2, S. 2000395
    ISSN: 1521-3951; 0370-1972
  • Blumberg, Christian; Häuser, Patrick; Wefers, Fabian; Jansen, Dennis; Tegude, Franz-Josef; Weimann, Nils; Prost, Werner
    A systematic study of Ga- And N-polar GaN nanowire-shell growth by metal organic vapor phase epitaxy
    In: CrystEngComm Jg. 22 (2020) Nr. 33, S. 5522 - 5532
    ISSN: 1466-8033
  • Zapf, Maximilian; Ritzer, Maurizio; Liborius, Lisa; Johannes, Andreas; Hafermann, Martin; Schönherr, Sven; Segura-Ruiz, Jaime; Martínez-Criado, Gema; Prost, Werner; Ronning, Carsten
    Hot electrons in a nanowire hard X-ray detector
    In: Nature Communications Jg. 11 (2020) Nr. 1, S. 4729
    ISSN: 2041-1723
  • Blumberg, Christian; Liborius, Lisa; Ackermann, Julia; Tegude, Franz-Josef; Poloczek, Artur; Prost, Werner; Weimann, Nils
    Spatially controlled VLS epitaxy of gallium arsenide nanowires on gallium nitride layers
    In: CrystEngComm Jg. 22 (2020) Nr. 7, S. 1239 - 1250
    ISSN: 1466-8033
  • Arzi, Khaled; Suzuki, Safumi; Rennings, Andreas; Erni, Daniel; Weimann, Nils; Asada, Masahiro; Prost, Werner
    Subharmonic Injection Locking for Phase and Frequency Control of RTD-Based THz Oscillator
    In: IEEE Transactions on Terahertz Science and Technology Jg. 10 (2020) Nr. 2, S. 221 - 224
    ISSN: 2156-342X
  • Hillger, Philipp; van Delden, Marcel; Thanthrige, Udaya Sampath Miriya; Ahmed, Aya Mostafa; Wittemeier, Jonathan; Arzi, Khaled; Andree, Marcel; Sievert, Benedikt; Prost, Werner; Rennings, Andreas; Erni, Daniel; Musch, Thomas; Weimann, Nils; Sezgin, Aydin; Pohl, Nils; Pfeiffer, Ullrich R.
    Toward mobile integrated electronic systems at THz frequencies
    In: Journal of Infrared, Millimeter, and Terahertz Waves Jg. 41 (2020) Nr. 7, S. 846 - 869
    ISSN: 1866-6906; 1866-6892
  • Liborius, Lisa; Bieniek, Jan; Nägelein, Andreas; Tegude, Franz-Josef; Prost, Werner; Hannappel, Thomas; Poloczek, Artur; Weimann, Nils
    n-Doped InGaP Nanowire Shells in GaAs/InGaP Core–Shell p–n Junctions
    In: Physica Status Solidi (B): Basic Solid State Physics Jg. 257 (2020) Nr. 2, S. 1900358
    ISSN: 1521-3951; 0370-1972
  • Korte, Stefan; Nägelein, Andreas; Steidl, Matthias; Prost, Werner; Cherepanov, Vasily; Kleinschmidt, Peter; Hannappel, Thomas; Voigtländer, Bert
    Charge transport in GaAs nanowires : Interplay between conductivity through the interior and surface conductivity
    In: Journal of Physics: Condensed Matter Jg. 31 (2019) Nr. 7, S. 074004
    ISSN: 1361-648X; 0953-8984
  • Blumberg, Christian; Wefers, Fabian; Tegude, Franz-Josef; Weimann, Nils; Prost, Werner
    Mask-less MOVPE of arrayed n-GaN nanowires on site- and polarity-controlled AlN/Si templates
    In: CrystEngComm Jg. 21 (2019) Nr. 48, S. 7476 - 7488
    ISSN: 1466-8033
  • Speich, Claudia; Dissinger, Frank; Liborius, Lisa; Hagemann, Ulrich; Waldvogel, Siegfried R.; Tegude, Franz-Josef; Prost, Werner
    Process Development for Wet-Chemical Surface Functionalization of Gallium Arsenide Based Nanowires
    In: Physica Status Solidi (B): Basic Solid State Physics (2019) S. 1800678
    ISSN: 1521-3951; 0370-1972
  • Liborius, Lisa; Heyer, Fabian; Arzi, Khaled; Speich, Claudia; Prost, Werner; Tegude, Franz-Josef; Weimann, Nils; Poloczek, Artur
    Toward Nanowire HBT : Reverse Current Reduction in Coaxial GaAs/InGaP n(i)p and n(i)pn Core-Multishell Nanowires
    In: Physica Status Solidi (A): Applications and Materials Science Jg. 216 (2019) Nr. 1, S. 1800562
    ISSN: 1862-6319; 1862-6300
  • Schmitt, Sebastian W.; Sarau, George; Speich, Claudia; Döhler, Gottfried H.; Liu, Ziheng; Hao, Xiaojing; Rechberger, Stefanie; Dieker, Christel; Spiecker, Erdmann; Prost, Werner; Tegude, Franz-Josef; Conibeer, Gavin; Green, Martin A.; Christiansen, Silke H.
    Germanium Template Assisted Integration of Gallium Arsenide Nanocrystals on Silicon : A Versatile Platform for Modern Optoelectronic Materials
    In: Advanced Optical Materials Jg. 6 (2018) Nr. 8, S. 1701329
    ISSN: 2195-1071
  • Nägelein, Andreas; Steidl, Matthias; Korte, Stefan; Voigtländer, Bert; Prost, Werner; Kleinschmidt, Peter; Hannappel, Thomas
    Investigation of charge carrier depletion in freestanding nanowires by a multi-probe scanning tunneling microscope
    In: Nano Research Jg. 11 (2018) Nr. 11, S. 5924 - 5934
    ISSN: 1998-0000; 1998-0124
  • Blumberg, Christian; Grosse, Simon; Weimann, Nils; Tegude, Franz-Josef; Prost, Werner
    Polarity- and Site-Controlled Metal Organic Vapor Phase Epitaxy of 3D-GaN on Si(111)
    In: Physica Status Solidi (B): Basic Solid State Physics Jg. 255 (2018) Nr. 5, S. 1700485
    ISSN: 1521-3951; 0370-1972
  • Heedt, Sebastian; Traverso Ziani, Niccolò; Crépin, François; Prost, Werner; Trellenkamp, St.; Schubert, Jürgen; Grützmacher, Detlev A.; Trauzettel, Björn; Schäpers, Thomas
    Signatures of interaction-induced helical gaps in nanowire quantum point contacts
    In: Nature Physics Jg. 13 (2017) Nr. 6, S. 563 - 568
    ISSN: 1745-2473; 1745-2481
  • Heedt, S.; Manolescu, A.; Nemnes, G.A.; Prost, Werner; Schubert, J.; Grützmacher, D.; Schäpers, Th.
    Adiabatic edge channel transport in a nanowire quantum point contact register
    In: Nano Letters Jg. 16 (2016) Nr. 7, S. 4569 - 4575
    ISSN: 1530-6992; 1530-6984
  • Heedt, S.; Prost, Werner; Schubert, J.; Grützmacher, D.; Schäpers, Th.
    Ballistic Transport and Exchange Interaction in InAs Nanowire Quantum Point Contacts
    In: Nano Letters Jg. 16 (2016) Nr. 5, S. 3116 - 3123
    ISSN: 1530-6992; 1530-6984
  • Benner, Oliver; Blumberg, Christian; Arzi, Khaled; Poloczek, Artur; Prost, Werner; Tegude, Franz-Josef
    Erratum: Electrical characterization and transport model of n-gallium nitride nanowires
    In: Applied Physics Letters (APL) Jg. 108 (2016) Nr. 4, S. 082103
    ISSN: 0003-6951; 1077-3118
  • Bitzer, Lucas A.; Speich, Claudia; Schäfer, David; Erni, Daniel; Prost, Werner; Tegude, Franz-Josef; Benson, Niels; Schmechel, Roland
    Modelling of electron beam induced nanowire attraction
    In: Journal of Applied Physics Jg. 119 (2016) Nr. 14, S. 145101
    ISSN: 0021-8979; 1089-7550
  • Paszuk, Agnieszka; Brückner, Sebastian; Steidl, Matthias; Zhao, Weihong; Dobrich, Anja; Supplie, Oliver; Kleinschmidt, Peter; Prost, Werner; Hannappel, Thomas
    Controlling the polarity of metalorganic vapor phase epitaxy-grown GaP on Si(111) for subsequent III-V nanowire growth
    In: Applied Physics Letters (APL) Jg. 106 (2015) Nr. 23, S. 231601
    ISSN: 0003-6951; 1077-3118
  • Benner, Oliver; Blumberg, Christian; Arzi, Khaled; Poloczek, Artur; Prost, Werner; Tegude, Franz-Josef
    Electrical characterization and transport model of n-gallium nitride nanowires
    In: Applied Physics Letters (APL) Jg. 107 (2015) Nr. 8, S. 082103
    ISSN: 0003-6951; 1077-3118
  • Koester, Robert; Sager, Daniel; Quitsch, Wolf-Alexander; Pfingsten, Oliver; Poloczek, Artur; Blumenthal, Sarah; Keller, Gregor; Prost, Werner; Bacher, Gerd; Tegude, Franz-Josef
    High-Speed GaN/GaInN Nanowire Array Light-Emitting Diode on Silicon(111)
    In: Nano Letters Jg. 15 (2015) Nr. 4, S. 2318 - 2323
    ISSN: 1530-6992; 1530-6984
  • Yacoub, Hady; Fahle, Dirk; Finken, Matthias; Hahn, Herwig; Blumberg, Christian; Prost, Werner; Kalisch, Holger; Heuken, Michael; Vescan, Andrei
    The effect of the inversion channel at the AlN/Si interface on the vertical breakdown characteristics of GaN-based devices
    In: Semiconductor Science and Technology Jg. 29 (2014) Nr. 11, S. 115012
    ISSN: 1361-6641; 0268-1242
  • Sager, Daniel; Gutsche, Christoph; Prost, Werner; Tegude, Franz-Josef; Bacher, Gerd
    Recombination dynamics in single GaAs-nanowires with an axial heterojunction : N- versus p-doped areas
    In: Journal of Applied Physics Jg. 113 (2013) Nr. 17, S. 174303-1 - 174303-5
    ISSN: 0021-8979; 1089-7550
  • Korte, Stefan; Steidl, Matthias; Prost, Werner; Cherepanov, Vasily; Voigtländer, Bert; Zhao, Weihong; Kleinschmidt, Peter; Hannappel, Thomas
    Resistance and dopant profiling along freestanding GaAs nanowires
    In: Applied Physics Letters (APL) Jg. 103 (2013) Nr. 14, S. 143104
    ISSN: 0003-6951; 1077-3118
  • Sladek, Kamil; Winden, Andreas; Wirths, Stephan; Weis, Karl; Blömers, Christian; Gül, Önder; Grap, Thomas; Lenk, Steffi; von der Ahe, Martina; Weirich, Thomas E.; Hardtdegen, Hilde; Lepsa, Mihail Ion; Lysov, Andrey; Li, Zi-An; Prost, Werner; Tegude, Franz-Josef; Lüth, Hans; Schäpers, Thomas; Grützmacher, Detlev
    Comparison of InAs nanowire conductivity : Influence of growth method and structure
    In: Physica Status Solidi (C): Current Topics in Solid State Physics Jg. 9 (2012) Nr. 2, S. 230 - 234
    ISSN: 1862-6351; 1610-1642; 1610-1634
  • Gutsche, Christoph; Niepelt, Raphael; Gnauck, Martin; Lysov, Andrey; Prost, Werner; Ronning, Carsten; Tegude, Franz-Josef
    Direct determination of minority carrier diffusion lengths at axial GaAs nanowire p-n junctions
    In: Nano Letters Jg. 12 (2012) Nr. 3, S. 1453 - 1458
    ISSN: 1530-6992; 1530-6984
  • Grange, Rachel; Brönstrup, Gerald; Kiometzis, Michael; Sergeyev, Anton; Richter, Jessica; Leiterer, Christian; Fritzsche, Wolfgang; Gutsche, Christoph; Lysov, Andrey; Prost, Werner; Tegude, Franz-Josef; Pertsch, Thomas; Tünnermann, Andreas; Christiansen, Silke
    Far-field imaging for direct visualization of light interferences in GaAs nanowires
    In: Nano Letters Jg. 12 (2012) Nr. 10, S. 5412 - 5417
    ISSN: 1530-6992; 1530-6984
  • Gutsche, Christoph; Lysov, Andrey; Braam, Daniel; Regolin, Ingo; Keller, Gregor; Li, Zi-An; Geller, Martin Paul; Spasova, Marina; Prost, Werner; Tegude, Franz-Josef
    N-GaAs/InGaP/p-GaAs core-multishell nanowire diodes for efficient light-to-current conversion
    In: Advanced Functional Materials Jg. 22 (2012) Nr. 5, S. 929 - 936
    ISSN: 1616-301X; 1616-3028
  • Gutsche, Christof; Lysov, Andrey; Regolin, Ingo; Münstermann, Benjamin; Prost, Werner; Tegude, Franz-Josef
    Scalable electrical properties of axial GaAs nanowire pn-diodes
    In: Journal of Electronic Materials (JEM) Jg. 41 (2012) Nr. 5, S. 809 - 812
    ISSN: 0361-5235; 1543-186X
  • Brönstrup, Gerald; Leiterer, Christian; Jahr, Norbert; Gutsche, Christoph; Lysov, Andrey; Regolin, Ingo; Prost, Werner; Tegude, Franz-Josef; Fritzsche, Wolfgang; Christiansen, Silke H.
    A precise optical determination of nanoscale diameters of semiconductor nanowires
    In: Nanotechnology Jg. 22 (2011) Nr. 38, S. 385201
    ISSN: 0957-4484; 1361-6528
  • Regolin, Ingo; Gutsche, Christoph; Lysov, Andrey; Blekker, Kai; Li, Zi-An; Spasova, Marina; Prost, Werner; Tegude, Franz-Josef
    Axial pn-junctions formed by MOVPE using DEZn and TESn in vaporliquidsolid grown GaAs nanowires
    In: Journal of Crystal Growth Jg. 315 (2011) Nr. 1, S. 143 - 147
    ISSN: 0022-0248; 1873-5002
  • Ahl, Jan Philipp; Behmenburg, Hannes; Giesen, Christoph; Regolin, Ingo; Prost, Werner; Tegude, Franz-Josef; Radnoczi, György Zoltán; Pécz, Béla; Kalisch, Holger; Jansen, Rolf H.; Heuken, Michael
    Gold catalyst initiated growth of GaN nanowires by MOCVD
    In: Physica Status Solidi (C): Current Topics in Solid State Physics Jg. 8 (2011) Nr. 7-8, S. 2315 - 2317
    ISSN: 1862-6351; 1610-1642; 1610-1634
  • Topaloglu, Serkan; Prost, Werner; Tegude, Franz-Josef
    ICP-RIE etching of self-aligned InP based HBTs with Cl₂/N ₂ chemistry
    In: Microelectronic Engineering Jg. 88 (2011) Nr. 7, S. 1601 - 1605
    ISSN: 0167-9317; 1873-5568
  • Gutsche, Christoph; Lysov, Andrey; Regolin, Ingo; Brodt, A.; Liborius, Lisa; Frohleiks, Julia; Prost, Werner; Tegude, Franz-Josef
    Ohmic contacts to n-GaAs nanowires
    In: Journal of Applied Physics Jg. 110 (2011) Nr. 1, S. 014305
    ISSN: 0021-8979; 1089-7550
  • Lysov, Andrey; Offer, Matthias; Gutsche, Christoph; Regolin, Ingo; Topaloglu, Serkan; Geller, Martin Paul; Prost, Werner; Tegude, Franz-Josef
    Optical properties of heavily doped GaAs nanowires and electroluminescent nanowire structures
    In: Nanotechnology Jg. 22 (2011) Nr. 8, S. 085702
    ISSN: 0957-4484; 1361-6528
  • Li, Zi-An; Möller, Christina; Migunov, Vadim; Spasova, Marina; Farle, Michael; Lysov, Andrey; Gutsche, Christoph; Regolin, Ingo; Prost, Werner; Tegude, Franz-Josef; Ercius, Peter
    Planar-defect characteristics and cross-sections of 〈001〉, 〈111〉, and 〈112〉 InAs nanowires
    In: Journal of Applied Physics Jg. 109 (2011) Nr. 11, S. 114320
    ISSN: 0021-8979; 1089-7550
  • Lysov, Andrey; Vinaji, Sasa; Offer, Matthias; Gutsche, Christoph; Regolin, Ingo; Mertin, Wolfgang; Geller, Martin Paul; Prost, Werner; Bacher, Gerd; Tegude, Franz-Josef
    Spatially resolved photoelectric performance of axial GaAs nanowire pn-diodes
    In: Nano Research Jg. 4 (2011) Nr. 10, S. 987 - 995
    ISSN: 1998-0000; 1998-0124
  • Gutsche, Christoph; Lysov, Andrey; Regolin, Ingo; Blekker, Kai; Prost, Werner; Tegude, Franz-Josef
    n-Type doping of vapor–liquid–solid grown GaAs nanowires
    In: Nanoscale Research Letters Jg. 6 (2011) Nr. 1, S. 65
    ISSN: 1931-7573; 1556-276X
  • Blekker, Kai; Münstermann, Benjamin; Matiss, Andreas; Do, Quoc-Thai; Regolin, Ingo; Brockerhoff, Wolfgang; Prost, Werner; Tegude, Franz-Josef
    High-Frequency Measurements on InAs Nanowire Field-Effect Transistors using Coplanar Waveguide Contacts
    In: IEEE Transactions on Nanotechnology Jg. 9 (2010) Nr. 4, S. 432 - 437
    ISSN: 1536-125X; 1941-0085
  • Prost, Werner; Zhang, Dudu; Münstermann, Benjamin; Feldengut, Tobias; Geitmann, Ralf; Poloczek, Artur; Tegude, Franz-Josef
    InP-Based Unipolar Heterostructure Diode for Vertical Integration, Level Shifting, and Small Signal Rectification
    In: EICE Transactions C: IEICE Transactions on Electronics Jg. E93-C (2010) Nr. 8, S. 1309 - 1314
    ISSN: 1745-1353; 0916-8524
  • Ronning, Carsten; Borschel, Christian; Geburt, Sebastian; Niepelt, Raphael; Müller, Sven; Stichtenoth, Daniel; Richters, Jan Peter; Dev, Apurba; Voss, Tobias; Chen, Limei; Heimbrodt, Wolfram; Gutsche, Christoph; Prost, Werner
    Tailoring the properties of semiconductor nanowires using ion beams
    In: Physica Status Solidi (B): Basic Solid State Physics Jg. 247 (2010) Nr. 10, S. 2329 - 2337
    ISSN: 0370-1972; 1521-3951
  • Borschel, Christian; Niepelt, Raphael; Geburt, Sebastian; Gutsche, Christoph; Regolin, Ingo; Prost, Werner; Tegude, Franz-Josef; Stichtenoth, Daniel; Schwen, Daniel; Ronning, Carsten
    Alignment of semiconductor nanowires using ion beams
    In: Small Jg. 5 (2009) Nr. 22, S. 2576 - 2580
    ISSN: 1613-6810; 1613-6829
  • Gutsche, Christoph; Regolin, Ingo; Blekker, Kai; Lysov, Andrey; Prost, Werner; Tegude, Franz-Josef
    Controllable p -type doping of GaAs nanowires during vapor-liquid-solid growth
    In: Journal of Applied Physics Jg. 105 (2009) Nr. 2, S. 024305
    ISSN: 0021-8979; 1089-7550
  • Vinaji, Sasa; Lochthofen, André; Mertin, Wolfgang; Regolin, Ingo; Gutsche, Christoph; Prost, Werner; Tegude, Franz-Josef; Bacher, Gerd
    Material and doping transitions in single GaAs-based nanowires probed by Kelvin probe force microscopy
    In: Nanotechnology Jg. 20 (2009) Nr. 38, S. 385702
    ISSN: 0957-4484; 1361-6528
  • Stichtenoth, Daniel; Wegener, Katharina; Gutsche, Christoph; Regolin, Ingo; Tegude, Franz-Josef; Prost, Werner; Seibt, Michael; Ronning, Carsten
    P -type doping of GaAs nanowires
    In: Applied Physics Letters (APL) Jg. 92 (2008) Nr. 16, S. 163107
    ISSN: 0003-6951; 1077-3118
  • Jin, Zhi; Liu, Xinyu; Prost, Werner; Tegude, Franz-Josef
    Surface-recombination-free InGaAs/InP HBTs and the base contact recombination
    In: Solid State Electronics Jg. 52 (2008) Nr. 7, S. 1088 - 1091
    ISSN: 0038-1101; 1879-2405
  • Regolin, Ingo; Khorenko, Victor; Prost, Werner; Tegude, Franz-Josef; Sudfeld, Daniela; Kästner, Jochen; Dumpich, Günter; Hitzbleck, Klemens; Wiggers, Hartmut
    GaAs whiskers grown by metal-organic vapor-phase epitaxy using Fe nanoparticles
    In: Journal of Applied Physics Jg. 101 (2007) Nr. 5, S. 054318
    ISSN: 0021-8979; 1089-7550
  • Regolin, Ingo; Sudfeld, Daniela; Lüttjohann, Stephan; Khorenko, Victor; Prost, Werner; Kästner, Jochen; Dumpich, Guenter; Meier, Cedrik; Lorke, Axel; Tegude, Franz-Josef
    Growth and characterisation of GaAs/InGaAs/GaAs nanowhiskers on (1 1 1) GaAs
    In: Journal of Crystal Growth Jg. 298 (2007) S. 607 - 611
    ISSN: 0022-0248; 1873-5002
  • Prost, Werner; Khorenko, Victor; Mofor, Augustine Che; Neumann, Stefan; Poloczek, Artur; Matiss, Andreas; Bakin, Andrey; Schlachetzki, Andreas; Tegude, Franz-Josef
    High performance III/V RTD and PIN diode on a silicon (001) substrate
    In: Applied Physics A: Materials Science and Processing Jg. 87 (2007) Nr. 3, S. 539 - 544
    ISSN: 0947-8396; 1432-0630
  • Do, Quoc Thai; Blekker, Kai; Regolin, Ingo; Prost, Werner; Tegude, Franz-Josef
    High transconductance MISFET with a single InAs nanowire channel
    In: IEEE Electron Device Letters Jg. 28 (2007) Nr. 8, S. 682 - 684
    ISSN: 0741-3106; 1558-0563
  • Alkeev, Nikolay V.; Averin, Stanislav V.; Dorofeev, Aleksey A.; Velling, Peter; Khorenko, E.; Prost, Werner; Tegude, Franz-Josef
    Sequential mechanism of electron transport in the resonant tunneling diode with thick barriers
    In: Semiconductors Jg. 41 (2007) Nr. 2, S. 227 - 231
    ISSN: 1063-7826; 1090-6479
  • Krämer, Stefan; Neumann, Stefan; Prost, Werner; Tegude, Franz-Josef; Malzer, Stefan; Döhler, Gottfried H.
    A monolithically integrated intensity-independent polarization-sensitive switch operating at 1.3 μm based on ordering in InGaAsP
    In: Physica E: Low-Dimensional Systems and Nanostructures Jg. 32 (2006) Nr. 1-2, S. 554 - 557
    ISSN: 1386-9477; 1873-1759
  • Regolin, Ingo; Khorenko, Victor; Prost, Werner; Tegude, Franz-Josef; Sudfeld, Daniela; Kästner, Jochen; Dumpich, Günter
    Composition Control in MOVPE-Grown InGaAs Nanowhiskers.
    In: Journal of Applied Physics Jg. 298 (2006) S. 607 - 611
    ISSN: 0021-8979; 1089-7550
  • Regolin, Ingo; Khorenko, Victor; Prost, Werner; Tegude, Franz-Josef; Sudfeld, Daniela; Kästner, Jochen; Dumpich, Guenter
    Composition control in metal-organic vapor-phase epitaxy grown InGaAs nanowhiskers
    In: Journal of Applied Physics Jg. 100 (2006) Nr. 7, S. 074321
    ISSN: 0021-8979; 1089-7550
  • Matiss, Andreas; Prost, Werner; Tegude, Franz-Josef
    Optoelectronic 1:2 demultiplexing based on resonant tunnelling diodes and pin-photodetectors
    In: Electronics Letters Jg. 42 (2006) Nr. 10, S. 599 - 600
    ISSN: 0013-5194; 1350-911X
  • Jin, Zhi; Uchida, Kazuo; Nozaki, Shinji; Prost, Werner; Tegude, Franz-Josef
    Passivation of InP-based HBTs
    In: Applied Surface Science Jg. 252 (2006) Nr. 21, S. 7664 - 7670
    ISSN: 0169-4332; 1873-5584
  • Sudfeld, Daniela; Regolin, Ingo; Kästner, Jochen; Dumpich, Guenter; Khorenko, Victor; Prost, Werner; Tegude, Franz-Josef
    Single InGaAs nanowhiskers characterized by analytical transmission electron microscopy
    In: Phase Transitions Jg. 79 (2006) Nr. 9-10, S. 727 - 737
    ISSN: 0141-1594; 1029-0338
  • Topaloǧlu, Serkan; Driesen, Jörn; Prost, Werner; Tegude, Franz-Josef;
    The effect of collector doping on InP-based double heterojunction bipolar transistors
    4th International Conference on Electrical and Electronics Engineering (ELECO), Bursa, Turkey, 07.12.2005 - 11.12.2005,
    In: Turkish Journal of Electrical Engineering & Computer Sciences Jg. 14 (2006) Nr. 3, S. 429 - 436
    ISSN: 1300-0632; 1303-6203
  • Jin, Zhi; Neumann, Stefan; Prost, Werner; Tegude, Franz-Josef
    Passivation of InP/GaAsSb/InP double heterostructure bipolar transistors with ultra thin base layer by low-temperature deposited SiNₓ
    In: Solid State Electronics Jg. 49 (2005) Nr. 3, S. 409 - 412
    ISSN: 0038-1101; 1879-2405
  • Krämer, Stefan; Neumann, Stefan; Prost, Werner; Tegude, Franz-Josef; Malzer, Stefan; Döhler, Gottfried H.
    Polarisation-sensitive switch : An integrated intensity-independent solution for 1.3 μm based on the polarisation anisotropy of ordered InGaAsP
    In: Physica Status Solidi (A): Applications and Materials Science Jg. 202 (2005) Nr. 6, S. 992 - 996
    ISSN: 1862-6300; 1862-6319
  • Schulze-Kraasch, Folkert; Velling, Peter; Prost, Werner
    Characterisation of ultra-thin III/V-heterostructures by convergent-beam-electron- and high-resolution-X-ray-diffraction
    In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology Jg. 110 (2004) Nr. 2, S. 161 - 167
    ISSN: 0921-5107; 1873-4944
  • Jin, Zhi; Prost, Werner; Neumann, Stefan; Tegude, Franz-Josef
    Comparison of the passivation effects on self- and non-self-aligned InP/InGaAs/InP double heterostructure bipolar transistors by low-temperature deposited SiNₓ
    In: Journal of Applied Physics Jg. 96 (2004) Nr. 1, S. 777 - 783
    ISSN: 0021-8979; 1089-7550
  • Jin, Zhi; Otten, Frank; Reimann, Thorsten; Neumann, Stefan; Prost, Werner; Tegude, Franz-Josef
    Current gain increase by SiNₓ passivation in self-aligned InGaAs/InP heterostructure bipolar transistor with compositionally graded base
    In: Solid State Electronics Jg. 48 (2004) Nr. 9, S. 1637 - 1641
    ISSN: 0038-1101; 1879-2405
  • Jin, Zhi; Prost, Werner; Neumann, Stefan; Tegude, Franz-Josef
    Current transport mechanisms and their effects on the performances of InP-based double heterojunction bipolar transistors with different base structures
    In: Applied Physics Letters (APL) Jg. 84 (2004) Nr. 15, S. 2910 - 2912
    ISSN: 0003-6951; 1077-3118
  • Prost, Werner; Tegude, Franz-Josef
    Disziplin im Nano-Maßstab : Selbstorganisation in Bottom-up-Prozessen
    In: Forum Forschung: Das Forschungsmagazin der Universität Duisburg-Essen (2004) Nr. 2003/2004, S. 88 - 92
  • Jin, Zhi; Neumann, Stefan; Prost, Werner; Tegude, Franz-Josef
    Effects of (NH4)(2)S passivation on the performance of graded-base InGaAs/InP HBTs
    In: Physica status solidi A - Applied research Jg. 201 (2004) Nr. 5, S. 1017 - 1021
    ISSN: 1521-396X
  • Jin, Zhi; Neumann, Stefan; Prost, Werner; Tegude, Franz-Josef
    Effects of (NH₄)₂S passivation on the performance of graded-base InGaAs/InP HBTs
    In: Physica Status Solidi (A): Applications and Materials Science Jg. 201 (2004) Nr. 5, S. 1017 - 1021
    ISSN: 0031-8965; 1521-396X; 1862-6319; 1862-6300
  • Alkeev, Nikolay V.; Lyubchenko, Vladimir E.; Velling, Peter; Khorenko, E.; Prost, Werner; Tegude, Franz-Josef
    Equivalent circuit of a resonant tunnel InGaAs/InAlAs diode operating at millimetric waves
    In: Journal of Communications Technology and Electronics Jg. 49 (2004) Nr. 7, S. 833 - 838
    ISSN: 1064-2269; 1555-6557
  • Alkeev, Nikolay V.; Lyubchenko, Vladimir E.; Velling, Peter; Khorenko, E.; Prost, Werner; Tegude, Franz-Josef
    Equivalent circuit of a resonant tunnel InGaAs/InAlAs diode operating at millimetric waves
    In: Radiotekhnika i Elektronika Jg. 49 (2004) Nr. 7, S. 886 - 893
    ISSN: 0033-8494
  • Neumann, Stefan; Velling, Peter; Prost, Werner; Tegude, Franz-Josef;
    Growth and characterization of InAlP/InGaAs double barrier RTDs
    12th International Conference on Metalorganic Vapour Phase Epitaxy (MOVPE), Lahaina, Hawaii, USA, 30.05.2004 - 04.06.2004,
    In: Journal of Crystal Growth Jg. 272 (2004) Nr. 1-4, S. 555 - 558
    ISSN: 0022-0248; 1873-5002
  • Khorenko, E.; Prost, Werner; Tegude, Franz-Josef; Stoffel, Mathieu; Duschl, R.; Dashiell, Michael W.; Schmidt, O.G.
    Influence of layer structure on the current-voltage characteristics of Si/SiGe interband tunneling diodes
    In: Journal of Applied Physics Jg. 96 (2004) Nr. 7, S. 3848 - 3851
    ISSN: 0021-8979; 1089-7550
  • Khorenko, Victor; Regolin, Ingo; Neumann, Stefan; Prost, Werner; Tegude, Franz-Josef; Wiggers, Hartmut
    Photoluminescence of GaAs nanowhiskers grown on Si substrate
    In: Applied Physics Letters (APL) Jg. 85 (2004) Nr. 26, S. 6407 - 6408
    ISSN: 0003-6951; 1077-3118
  • Jin, Zhi; Prost, Werner; Neumann, Stefan; Tegude, Franz-Josef
    Sulfur and low-temperature SiNₓ passivation of self-aligned graded-base InGaAs/InP heterostructure bipolar transistors
    In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures Jg. 22 (2004) Nr. 3, S. 1060 - 1066
    ISSN: 1071-1023; 2166-2754
  • Jin, Zhi; Neumann, Stefan; Prost, Werner; Tegude, Franz-Josef
    Surface recombination mechanism in graded-base InGaAs-InP HBTs
    In: IEEE Transactions on Electron Devices Jg. 51 (2004) Nr. 6, S. 1044 - 1045
    ISSN: 0018-9383; 1557-9646
  • Glösekötter, Peter; Pacha, Christian; Goser, Karl F.; Prost, Werner; Kim, Samuel O.; van Husen, Holger; Reimann, Thorsten; Tegude, Franz-Josef
    Circuit and application aspects of tunnelling devices in a MOBILE configuration
    In: International Journal of Circuit Theory and Applications Jg. 31 (2003) Nr. 1, S. 83 - 103
    ISSN: 0098-9886; 1097-007X
  • Neumann, Stefan; Bakin, Andrey; Velling, Peter; Prost, Werner; Wehmann, Hergo Heinrich; Schlachetzki, Andreas; Tegude, Franz-Josef;
    Growth of III/V resonant tunnelling diode on Si substrate with LP-MOVPE
    Eleventh International Conference on MOVPE XI; Berlin, Germany; 3 - 7 June 2002,
    In: Journal of Crystal Growth Jg. 248 (2003) S. 380 - 383
    ISSN: 0022-0248; 1873-5002
  • Neumann, Stefan; Prost, Werner; Tegude, Franz-Josef;
    Growth of carbon-doped LP-MOVPE InAlAs using non-gaseous sources
    Eleventh International Conference on MOVPE XI; Berlin, Germany; 3 - 7 June 2002,
    In: Journal of Crystal Growth Jg. 248 (2003) S. 130 - 133
    ISSN: 0022-0248; 1873-5002
  • Neumann, Stefan; Spieler, Jochen; Blache, R.; Kiesel, Peter; Prost, Werner; Döhler, Gottfried H.; Tegude, Franz-Josef;
    MOVPE growth and polarisation dependence of (dis-)ordered InGaAsP PIN diodes for optical fibre applications
    Eleventh International Conference on MOVPE XI; Berlin, Germany; 3 - 7 June 2002,
    In: Journal of Crystal Growth Jg. 248 (2003) S. 158 - 162
    ISSN: 0022-0248; 1873-5002
  • Otten, Frank; Auer, Uwe; Kruis, Frank Einar; Prost, Werner; Tegude, Franz-Josef; Fissan, Heinz
    Lithographic Tools for Producing Patterned Films Compsed of Gas Phase Generated Nanocrystals Impress
    In: Material Science and Technology Jg. 18 (2002) Nr. 7, S. 717 - 720
    ISSN: 1743-2847; 0267-0836
  • Auer, Uwe; Prost, Werner; Agethen, Michael; Tegude, Franz-Josef; Duschl, R.; Eberl, Karl
    Low-voltage MOBILE logic module based on Si/SiGe interband tunnelling diodes
    In: IEEE Electron Device Letters Jg. 22 (2001) Nr. 5, S. 215 - 217
    ISSN: 0741-3106; 1558-0563
  • Spieler, Jochen; Kippenberg, Thomas; Krauß, J.; Kiesel, Peter; Döhler, Gottfried H.; Velling, Peter; Prost, Werner; Tegude, Franz-Josef
    Electro-optical examination of the band structure of ordered InGaAs
    In: Applied Physics Letters (APL) Jg. 76 (2000) Nr. 1, S. 88 - 90
    ISSN: 0003-6951; 1077-3118
  • Velling, Peter; Agethen, Michael; Prost, Werner; Tegude, Franz-Josef
    InAlAs/InGaAs/InP heterostructures for RTD and HBT device applications grown by LP-MOVPE using non-gaseous sources
    In: Journal of Crystal Growth Jg. 221 (2000) Nr. 1-4, S. 722 - 729
    ISSN: 0022-0248; 1873-5002
  • Prost, Werner; Auer, Uwe; Tegude, Franz-Josef; Pacha, Christian; Goser, Karl F.; Janßen, Guido; van der Roer, T.
    Manufacturability and robust design of nanoelectronic logic circuits based on resonant tunnelling diodes
    In: International Journal of Circuit Theory and Applications Jg. 28 (2000) Nr. 6, S. 537 - 552
    ISSN: 0098-9886; 1097-007X
  • Keiper, Dietmar; Velling, Peter; Prost, Werner; Agethen, Michael; Tegude, Franz-Josef; Landgren, Gunnar
    Metalorganic vapour phase epitaxy growth of InP-based heterojunction bipolar transistors with carbon doped InGaAs base using tertiarybutylarsine and tertiarybutylphosphine in N₂ ambient
    In: Japanese Journal of Applied Physics Jg. 39 (2000) Nr. 11, S. 6162 - 6165
    ISSN: 0021-4922; 1347-4065
  • Pacha, Christian; Kessler, Oliver; Glösekötter, Peter; Goser, Karl F.; Prost, Werner; Brennemann, Andreas; Auer, Uwe; Tegude, Franz-Josef
    Parallel adder design with reduced circuit complexity using resonant tunneling transistors and threshold logic
    In: Analog Integrated Circuits and Signal Processing Jg. 24 (2000) Nr. 1, S. 7 - 25
    ISSN: 0925-1030; 1573-1979
  • Pacha, Christian; Auer, Uwe; Burwick, Christian; Glösekötter, Peter; Brennemann, Andreas; Prost, Werner; Tegude, Franz-Josef; Goser, Karl F.;
    Threshold logic circuit design of parallel adders using resonant tunneling devices
    11th International Symposium on System-Level Synthesis and Design (ISS'98); Hsinchu, Taiwan; 2 - 4 December 1998,
    In: IEEE Transactions on Very Large Scale Integration (VLSI) Systems Jg. 8 (2000) Nr. 5, S. 558 - 572
    ISSN: 1063-8210; 1557-9999
  • Hilburger, Ulrich; Fix, Walter; Mayer, R.; Geißelbrecht, Wolfgang; Malzer, Stefan; Velling, Peter; Prost, Werner; Tegude, Franz-Josef; Döhler, Gottfried H.;
    Extension of the epitaxial shadow mask MBE technique for the monolithic integration and in situ fabrication of novel device structures
    10th International Conference on Molecular Beam Epitaxy (MBE-X); Cannes; 31 August - 4 September 1998,
    In: Journal of Crystal Growth Jg. 201 (1999) S. 574 - 577
    ISSN: 0022-0248; 1873-5002
  • Kopperschmidt, P.; Senz, S T.; Scholz, R.; Kästner, G.; Gösele, U.; Velling, Peter; Prost, Werner; Tegude, Franz-Josef; Gottschalch, V.; Wada, K.
    Strain Relaxation During Heteroepitaxy on Twist-Bonded Thin Gallium Arsenide Substrates
    In: MRS (Materials Research Society) Proceedings Jg. 535: III-V and IV-IV Materials and Processing Challenges for Highly Integrated Microelectronics and Optoelectronics (1999) S. 45
    ISSN: 0272-9172; 1946-4274
  • Auer, Uwe; Kim, Samuel O.; Agethen, Michael; Veiling, P.; Prost, Werner; Tegude, Franz-Josef
    Fast fabrication of InP-based HBT using a novel coplanar design
    In: Electronics Letters Jg. 34 (1998) Nr. 19, S. 1885 - 1886
    ISSN: 0013-5194; 1350-911X
  • Haase, M.; Prost, Werner; Veiling, P.; Liu, Q.; Tegude, Franz-Josef
    HR XRD for the analysis of ultrathin centrosymmetric strained DB-RTD heterostructures
    In: Thin Solid Films Jg. 319 (1998) Nr. 1-2, S. 25 - 28
    ISSN: 0040-6090; 1879-2731
  • Velling, Peter; Janßen, Guido; Agethen, Michael; Prost, Werner; Tegude, Franz-Josef
    InGaP/GaAs hole barrier asymmetry determined by (0 0 2) X-ray reflections and p-type DB-RTD hole transport
    In: Journal of Crystal Growth Jg. 195 (1998) Nr. 1-4, S. 117 - 123
    ISSN: 0022-0248; 1873-5002
  • Velling, Peter; Fix, Walter; Geißelbrecht, Wolfgang; Prost, Werner; Döhler, Gottfried H.; Tegude, Franz-Josef
    InGaP/GaAs shadow-mask for optoelectronic integration and MBE regrowth
    In: Journal of Crystal Growth Jg. 195 (1998) Nr. 1-4, S. 490 - 494
    ISSN: 0022-0248; 1873-5002
  • Prost, Werner; Kruis, Frank Einar; Otten, Frank; Nielsch, Kornelius; Rellinghaus, Bernd; Auer, Uwe; Peled, Aaron Z.; Wassermann, Eberhard; Fissan, Heinz; Tegude, Franz-Josef
    Monodisperse aerosol particle deposition : Prospects for nanoelectronics
    In: Microelectronic Engineering Jg. 41-42 (1998) S. 535 - 538
    ISSN: 0167-9317; 1873-5568
  • Veiling, P.; Janßen, Guido; Auer, Uwe; Prost, Werner; Tegude, Franz-Josef
    NAND/NOR logic circuit using single InP-based RTBT
    In: Electronics Letters Jg. 34 (1998) Nr. 25, S. 2390 - 2392
    ISSN: 0013-5194; 1350-911X
  • Lakner, Hubert; Mendorf, C.; Bollig, Bernd; Prost, Werner; Tegude, Franz-Josef;
    Determination of interface composition in III-V heterojunction devices (HBT and RTD) with atomic resolution using STEM techniques
    3rd International Workshop on Expert Evaluation & Control of Compound Semicond. Mat. & Technologies (EXMATEC), Freiburg, Germany, 12.05.1996 - 15.05.1996,
    In: Materials Science and Engineering B Jg. 44 (1997) Nr. 1-3, S. 52 - 56
    ISSN: 0921-5107; 1873-4944
  • Liu, Q.; Prost, Werner; Tegude, Franz-Josef;
    Investigation of growth temperature dependent GaInP ordering in different crystal planes using X-ray diffraction and photoluminescence
    3rd International Workshop on Expert Evaluation & Control of Compound Semicond. Mat. & Technologies (EXMATEC), Freiburg, Germany, 12.05.1996 - 15.05.1996,
    In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology Jg. 44 (1997) Nr. 1-3, S. 91 - 95
    ISSN: 0921-5107; 1873-4944
  • Liu, Q.; Prost, Werner; Brennemann, Andreas; Auer, Uwe; Tegude, Franz-Josef;
    Modelling imperfections of epitaxial heterostructures by means of X-ray diffraction analysis
    3rd European Symposium on X-Ray Topography and High Resolution Diffraction (X-TOP), Parma, Italy, 22.04.1996 - 24.04.1996,
    In: Nuovo Cimento della Societa Italiana di Fisica D Jg. 19 (1997) Nr. 2-4, S. 299 - 304
    ISSN: 0392-6737; 1826-9893
  • Brennemann, Andreas; Prost, Werner; Liu, Q.; Auer, Uwe; Tegude, Franz-Josef;
    Modelling intermixing of short period strained layer superlattices by means of X-ray diffraction analysis
    3rd International Workshop on Expert Evaluation & Control of Compound Semicond. Mat. & Technologies (EXMATEC), Freiburg, Germany, 12.05.1996 - 15.05.1996,
    In: Materials Science and Engineering B Jg. 44 (1997) Nr. 1-3, S. 87 - 90
    ISSN: 0921-5107; 1873-4944
  • Lindner, A.; Velling, Peter; Prost, Werner; Wiersch, A.; Kuphal, Eckart; Burchard, A.; Magerle, Robert; Deicher, Manfred; Tegude, Franz-Josef;
    The role of hydrogen in low-temperature MOVPE growth and carbon doping of In₀.₅₃Ga₀.₄₇As for InP-based HBT
    8th International Conference on Metalorganic Vapour Phase Epitaxy (MOVPE) (IC MOVPE), Cardiff, U.K., 09.06.1996 - 13.06.1996,
    In: Journal of Crystal Growth Jg. 170 (1997) Nr. 1-4, S. 287 - 291
    ISSN: 0022-0248; 1873-5002
  • Auer, Uwe; Prost, Werner; Janßen, Guido; Agethen, Michael; Reuter, Ralf; Tegude, Franz-Josef
    A novel 3-D integrated HFET/RTD frequency multiplier
    In: IEEE Journal on Selected Topics in Quantum Electronics Jg. 2 (1996) Nr. 3, S. 650 - 653
    ISSN: 1077-260X; 1558-4542
  • Liu, Q.; Brennemann, Andreas; Hardtdegen, H.; Lindner, A.; Prost, Werner; Tegude, Franz-Josef
    Characterization of hydrogen passivation and carbon self-compensation of highly C-doped GaAs by means of x-ray diffraction
    In: Journal of Applied Physics Jg. 79 (1996) Nr. 2, S. 710 - 716
    ISSN: 0021-8979; 1089-7550
  • Liu, Q.; Derksen, S.; Prost, Werner; Lindner, A.; Tegude, Franz-Josef
    Growth temperature dependent band alignment at the Ga₀.₅₁In₀.₄₉P to GaAs heterointerfaces
    In: Journal of Applied Physics Jg. 79 (1996) Nr. 1, S. 305 - 309
    ISSN: 0021-8979; 1089-7550
  • Auer, Uwe; Reuter, Ralf; Ellrodt, P.; Heedt, Christian H.; Prost, Werner; Tegude, Franz-Josef
    The impact of pseudomorphic AlAs spacer layers on the gate leakage current of InAlAs/InGaAs heterostructure field-effect transistors
    In: Microwave and Optical Technology Letters Jg. 11 (1996) Nr. 3, S. 125 - 128
    ISSN: 0895-2477; 1098-2760
  • Burchard, A.; Deicher, Manfred; Forkel-Wirth, Doris; Freidinger, J.; Kerle, T.; Magerle, Robert; Pfeiffer, W.; Prost, Werner; Wellmann, Peter J.; Winnacker, Albrecht;
    Acceptor-hydrogen interaction in ternary III-V semiconductors
    18th International Conference on Defects in Semiconductors; Sendai, Japan; 23 - 28 July 1995,
    In: Materials Science Forum (MSF) Jg. 196-201 (1995) Nr. 2, S. 987 - 992
    ISSN: 0255-5476; 1662-9752
  • Liu, Q.; Prost, Werner; Tegude, Franz-Josef
    Determination of CuPt-type ordering in GaInP by means of x-ray diffraction in the skew, symmetric arrangement
    In: Applied Physics Letters (APL) Jg. 67 (1995) S. 2807
    ISSN: 0003-6951; 1077-3118
  • Liu, Q.; Derksen, S.; Lindner, A.; Scheffer, F.; Prost, Werner; Tegude, Franz-Josef
    Evidence of type-II band alignment at the ordered GaInP to GaAs heterointerface
    In: Journal of Applied Physics Jg. 77 (1995) Nr. 3, S. 1154 - 1158
    ISSN: 0021-8979; 1089-7550
  • Auer, Uwe; Reuter, Ralf; Heedt, Christian H.; Prost, Werner; Tegude, Franz-Josef;
    InP-based heterostructure field-effect transistors with high-quality short-period (InAs)₃m/(GaAs)₁m superlattice channel layers
    8th Int. Conf. on Molecular Beam Epitaxy (MBE) (IC MBE), Osaka, Japan, 29.08.1994 - 02.09.1994,
    In: Journal of Crystal Growth Jg. 150 (1995) S. 1225 - 1229
    ISSN: 0022-0248; 1873-5002
  • Prost, Werner; Scheffer, F.; Liu, Q.; Lindner, A.; Lakner, Hubert; Gyuro, I.; Tegude, Franz-Josef
    Metalorganic vapor phase epitaxial grown heterointerfaces to GaInP with group-III and group-V exchange
    In: Journal of Crystal Growth Jg. 146 (1995) Nr. 1-4, S. 538 - 543
    ISSN: 0022-0248; 1873-5002
  • Wiersch, A.; Heedt, Christian H.; Schneiders, S.; Tilders, R.; Buchali, F.; Kuebart, Wolfgang; Prost, Werner; Tegude, Franz-Josef
    Room-temperature deposition of SiNx using ECR-PECVD for III/V semiconductor microelectronics in lift-off technique
    In: Journal of Non-Crystalline Solids Jg. 187 (1995) S. 334 - 339
    ISSN: 0022-3093; 1873-4812
  • Scheffer, F.; Heedt, Christian H.; Reuter, Ralf; Lindner, A.; Liu, Q.; Prost, Werner; Tegude, Franz-Josef
    High breakdown voltage InGaAs/lnAIAs HFET using ln₀.₅Ga₀.₅P spacer layer
    In: Electronics Letters Jg. 30 (1994) Nr. 2, S. 169 - 170
    ISSN: 0013-5194; 1350-911X
  • Scheffer, F.; Lindner, A.; Liu, Q.; Heedt, Christian H.; Reuter, Ralf; Prost, Werner; Lakner, Hubert; Tegude, Franz-Josef
    Highly strained In₀.₅Ga₀.₅P as wide-gap material on InP substrate for heterojunction field effect transistor application
    In: Journal of Crystal Growth Jg. 145 (1994) Nr. 1-4, S. 326 - 331
    ISSN: 0022-0248; 1873-5002
  • Lindner, A.; Liu, Q.; Scheffer, F.; Haase, M.; Prost, Werner; Tegude, Franz-Josef;
    Low-pressure metalorganic vapour phase epitaxy growth of InAs/GaAs short period superlattices on InP substrates
    7th Int. Conf. on Metalorganic Vapour Phase Epitaxy (MOVPE) (IC MOVPE), Yokohama, Japan, 31.05.1994 - 03.06.1994,
    In: Journal of Crystal Growth Jg. 145 (1994) Nr. 1-4, S. 771 - 777
    ISSN: 0022-0248; 1873-5002
  • Liu, Q.; Scheffer, F.; Lindner, A.; Lakner, Hubert; Prost, Werner; Tegude, Franz-Josef;
    X-ray characterization of very thin GaₓIn₁₋ₓP (x ≈ 0.5) layers grown on InP
    Int. Workshop on Expert Evaluation & Control of Compound Semicond. Mat. & Technologies (EXMATEC), Parma, Italy, 18.05.1994 - 20.05.1994,
    In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology Jg. 28 (1994) Nr. 1-3, S. 188 - 192
    ISSN: 0921-5107; 1873-4944
  • Liu, Q.; Lindner, A.; Scheffer, F.; Prost, Werner; Tegude, Franz-Josef
    X-ray diffraction characterization of highly strained InAs and GaAs layers on InP grown by metalorganic vapor-phase epitaxy
    In: Journal of Applied Physics Jg. 75 (1994) Nr. 5, S. 2426 - 2433
    ISSN: 0021-8979; 1089-7550
  • Liu, Q.; Lakner, Hubert; Scheffer, F.; Lindner, A.; Prost, Werner
    Analysis of ordering in GaInP by means of x-ray diffraction
    In: Journal of Applied Physics Jg. 73 (1993) Nr. 6, S. 2770 - 2774
    ISSN: 0021-8979; 1089-7550
  • Liu, Q.; Quedeweit, U.; Scheffer, F.; Lindner, A.; Prost, Werner; Tegude, Franz-Josef;
    Effects of deep levels and Si-doping on GaInP material properties investigated by means of optical methods
    European Materials Research Conference (E-MRS), Strasbourg, France, 04.05.1993 - 07.05.1993,
    In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology Jg. 21 (1993) Nr. 2-3, S. 181 - 184
    ISSN: 0921-5107; 1873-4944
  • Kraus, Jörg; Meschede, Herbert; Liu, Q.; Prost, Werner; Tegude, Franz-Josef; Lakner, Hubert; Kubalek, Erich
    InyGa₁₋yAs{plus 45 degree rule}GaAs interface smoothing by GaAs monolayers in highly strained graded superlattice channels (0.2 ≤ y ≤ 0.4) for pseudomorphic AlₓGa₁₋ₓAs{plus 45 degree rule}InyGa₁₋yAs HFET
    In: Journal of Crystal Growth Jg. 127 (1993) Nr. 1-4, S. 589 - 591
    ISSN: 0022-0248; 1873-5002
  • Buchali, F.; Heedt, Christian H.; Prost, Werner; Gyuro, Imre; Meschede, Herbert; Tegude, Franz-Josef
    Analysis of gate leakage on MOVPE grown InAlAs/InGaAs-HFET
    In: Microelectronic Engineering Jg. 19 (1992) Nr. 1-4, S. 401 - 404
    ISSN: 0167-9317; 1873-5568
  • Scheffer, F.; Buchali, F.; Lindner, A.; Liu, Q.; Wiersch, A.; Prost, Werner
    High doping performance of lattice matched GaInP on GaAs
    In: Journal of Crystal Growth Jg. 124 (1992) Nr. 1-4, S. 475 - 482
    ISSN: 0022-0248; 1873-5002
  • Scheffer, F.; Joseph, M.; Prost, Werner; Tegude, Franz-Josef; Lackner, H.; Zumkley, S.; Wingen, G.; Jäger, Dieter
    Growth and characterization of AlGaAs/GaAs Bragg reflectors for nonlinear optoelectronic devices
    In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology Jg. 9 (1991) Nr. 1-3, S. 361 - 364
    ISSN: 1873-4944; 0921-5107
  • Brockerhoff, Wolfgang; Prost, Werner; Meschede, Herbert; Kraus, Jörg; Heime, Klaus; Weimann, Guenter W.; Schlapp, Winfried
    d.c.- and r.f.-characterisation of conventional and superlattice heterostructure field-effect transistors at low temeperatures
    In: Solid State Electronics Jg. 33 (1990) Nr. 11, S. 1393 - 1400
    ISSN: 0038-1101; 1879-2405
  • Hendriks, Peter; Staring, A.A.M.; van Welzenis, Rob G.; Wolter, Joachim H.; Prost, Werner; Heime, Klaus; Schlapp, Winfried; Weimann, Günter W.
    Current oscillations at high electrical fields in the two-dimensional electron gas in GaAs/AlGaAs heterostructures
    In: Applied Physics Letters (APL) Jg. 54 (1989) Nr. 26, S. 2668 - 2670
    ISSN: 0003-6951; 1077-3118
  • Roth, B.; Prost, Werner; Bertenburg, Ralf M.; Beyer, Adalbert; Wolff, I.
    Monolithisch integrierter Mikrowellenoszillator in Schlitzleitungstechnik
    In: NTZ: Fachzeitschrift für Informations- und Kommunikationstechnik Jg. 42 (1989) Nr. 10, S. 628 - 631
    ISSN: 2190-4197; 0948-728X
  • Brockerhoff, Wolfgang; Meschede, Herbert; Prost, Werner; Heime, Klaus; Weimann, Günter; Schlapp, Winfried
    RF Measurements and Characterization of Heterostructure Field-Effect Transistors at Low Temperatures
    In: IEEE Transactions on Microwave Theory and Techniques Jg. 37 (1989) Nr. 9, S. 1380 - 1388
    ISSN: 1557-9670; 0018-9480
  • Prost, Werner; Brockerhoff, Wolfgang; Heime, Klaus; Ploog, Klaus; Schlapp, Winfried; Weimann, Günter W.; Morkoç, Hadis D.
    Gate-Voltage Dependent Transport Measurements on Heterostructure Field-Effect Transistors
    In: IEEE Transactions on Electron Devices Jg. 33 (1986) Nr. 5, S. 646 - 650
    ISSN: 0018-9383; 1557-9646
  • Aufsätze

  • Arzi, Khaled; Keller, G.; Rennings, Andreas; Erni, Daniel; Tegude, Franz-Josef; Prost, Werner;
    Frequency locking of a free running resonant tunneling diode oscillator by wireless sub-harmonic injection locking
    UCMMT 2017 - UK-Europe-China Workshop on Millimetre-Waves and Terahertz Technologies, 11.-13. September 2017, Liverpool, UK,
    Liverpool (2017)
  • Beiträge in Sammelwerken und Tagungsbänden

  • Clochiatti, Simone; Mutlu, Enes; Preuß, Christian; Kreß, Robin; Prost, Werner; Weimann, Nils
    Broadband THz detection using InP triple-barrier resonant tunneling diode with integrated antenna
    In: Proceedings of the 4th International Workshop on Mobile Terahertz Systems / IWMTS 2021; 5-6 July 2021; Essen, Germany 2021
    ISBN: 978-1-7281-8439-5; 978-1-7281-8440-1
  • Zhang, Meng; Wang, Peng-Yuan; Rennings, Andreas; Clochiatti, Simone; Prost, Werner; Weimann, Nils; Erni, Daniel
    Design of a 1-to-4 subarray element for wireless subharmonic injection in the THz band
    In: Proceedings of the 4th International Workshop on Mobile Terahertz Systems / IWMTS 2021; 5-6 July 2021; Essen, Germany 2021
    ISBN: 978-1-7281-8439-5; 978-1-7281-8440-1
  • Kreß, Robin; Preuß, Christian; Mutlu, Enes; Clochiatti, Simone; Prost, Werner; Weimann, Nils
    THz detectors and emitters with On-Chip antenna aligned on hyper-hemispherical silicon lenses
    In: Proceedings of the 4th International Workshop on Mobile Terahertz Systems / IWMTS 2021; 5-6 July 2021; Essen, Germany 2021
    ISBN: 978-1-7281-8439-5; 978-1-7281-8440-1
  • Blumberg, Christian; Häuser, Patrick; Wefers, Fabian; Meier, Johanna; Bacher, Gerd; Weimann, Nils; Prost, Werner
    Growth of site- And polarity-controlled GaN nanowires on Silicon for high-speed LEDs
    In: 8th GMM-Workshops on Micro-Nano-Integration / Virtual, Online; ; 15 - 17 September 2020 2020, S. 60 - 64
    ISBN: 9783800753277
  • Clochiatti, Simone; Aikawa, Kotaro; Arzi, Khaled; Mutlu, Enes; Suhara, Michihiko; Weimann, Nils; Prost, Werner
    Large-Signal Modelling of sub-THz InP Triple-Barrier Resonant Tunneling Diodes
    In: 3rd International Workshop on Mobile Terahertz Systems / IWMTS 2020; Essen, Germany; 1-2 July 2020 2020, S. 9166270
    ISBN: 978-1-7281-5598-2; 978-1-7281-5599-9
  • Villani, Matteo; Oriols, Xavier; Clochiatti, Simone; Weimann, Nils; Prost, Werner
    The accurate predictions of THz quantum currents requires a new displacement current coefficient instead of the traditional transmission one
    In: 3rd International Workshop on Mobile Terahertz Systems / IWMTS 2020; Essen, Germany; 1-2 July 2020 2020, S. 9166410
    ISBN: 978-1-7281-5598-2; 978-1-7281-5599-9
  • Arzi, Khaled; Clochiatti, Simone; Mutlu, Enes; Kowaljow, Alexander; Sievert, Benedikt; Erni, Daniel; Weimann, Nils; Prost, Werner
    Broadband detection capability of a triple barrier resonant tunneling diode
    In: 2nd International Workshop on Mobile Terahertz Systems / IWMTS 2019; Bad Neuenahr, Germany; 1 - 3 July 2019 2019, S. 8823724
    ISBN: 978-1-7281-1271-8; 978-1-7281-1270-1; 978-1-7281-1272-5
  • Aikawa, Kotaro; Suhara, Michihiko; Asakawa, Kiyoto; Arzi, Khaled; Weimann, Nils; Prost, Werner
    Characterization of the Effective Tunneling Time and Phase Relaxation Time in Triple-Barrier Resonant Tunneling Diodes
    In: Compound Semiconductor Week 2019 (CSW): Proceedings / CSW 2019; Nara, Japan; 19 - 23 May 2019 2019, S. 8819043
    ISBN: 978-1-7281-0080-7; 978-1-7281-0079-1; 978-1-7281-0081-4
  • Weimann, Nils; Arzi, Khaled; Clochiatti, Simone; Prost, Werner
    Indiumphosphid-Resonante Tunneldioden für THz-Anwendungen
    In: MikroSystemTechnik Kongress 2019: Mikroelektronik | MEMS-MOEMS | Systemintegration – Säulen der Digitalisierung und künstlichen Intelligenz / 28. – 30. Oktober 2019 in Berlin 2019, S. 400 - 403
    ISBN: 978-3-8007-5129-7; 978-3-8007-5090-0
  • Zhang, Meng; Rennings, Andreas; Clochiatti, Simone; Arzi, Khaled; Prost, Werner; Weimann, Nils; Erni, Daniel
    Transmitarray element design for subharmonic injection-locked RTD oscillators in THz band
    In: Progress in Electromagnetics Research Symposium - Fall (PIERS - FALL): Proceedings / Fall 2019; Xiamen, China; 17 - 20 December 2019 2019, S. 2518 - 2522
    ISBN: 978-17281-5304-9; 978-1-7281-5305-6
  • Arzi, Khaled; Clochiatti, Simone; Suzuki, Safumi; Rennings, Andreas; Erni, Daniel; Weimann, Nils; Asada, Masahiro; Prost, Werner
    Triple-Barrier Resonant-Tunnelling Diode THz Detectors with on-chip antenna
    In: GeMiC 2019 - 12th German Microwave Conference / GeMiC 2019; Stuttgart, Germany; 25 - 27 March 2019 2019, S. 17 - 19
    ISBN: 978-3-9812668-9-4; 978-3-9820397-0-1; 978-1-7281-0242-9
  • Rennings, Andreas; Sievert, Benedikt; Lui, W.; Arzi, Khaled; Prost, Werner; Erni, Daniel
    Broadband millimeter-wave detector based on triple-barrier resonant tunneling diode and tailored archimedian spiral antenna
    In: Proceedings of 2017 Asia-Pacific Microwave Conference (APMC) / APMC 2017, 13. - 16. November 2017, Kuala Lumpur, Malaysia / Pasya, Idnin; Seman, Fauziahanim Che (Hrsg.) 2018, S. 775 - 778
    ISBN: 978-1-5386-0640-7
  • Arzi, Khaled; Rennings, Andreas; Erni, Daniel; Weimann, Nils; Prost, Werner; Suzuki, Safurni; Asada, Masahiro
    Millimeter-wave Signal Generation and Detection via the same Triple Barrier RTD and on-chip Antenna
    In: Proceedings of the 1st International Workshop on Mobile Terahertz Systems / IWMTS 2018, Duisburg, Germany, 2 - 4 July 2018 2018, S. 8454700
    ISBN: 978-1-5386-1221-7; 978-1-5386-1220-0; 978-1-5386-1222-4
  • Arzi, Khaled; Suzuki, Safumi; Rennings, Andreas; Erni, Daniel; Weimann, Nils; Asada, Masahiro; Prost, Werner
    Triple barrier RTD integrated in a slot antenna for mm-wave signal generation and detection
    In: Compound Semiconductor Week (CSW 2018) / 14th Int. Symposium on Compound Semiconductors (ISCS), and the 30th Int. Conference on Indium Phosphide and Related Materials (IPRM), May 29 – June 1, 2018, Massachussetts Institute of Technology (MIT), Cambridge, MA, USA 2018, S. 54
  • Arzi, Khaled; Keller, Gregor; Rennings, Andreas; Erni, Daniel; Tegude, Franz-Josef; Prost, Werner
    Frequency locking of a free running resonant tunneling diode oscillator by wire-less sub-harmonic injection locking
    In: 10th UK-Europe-China Workshop on Millimetre Waves and Terahertz Technologies, UCMMT 2017 / UCMMT 2017; Liverpool, United Kingdom; 11 - 13 September 2017 2017, S. 8068485
    ISBN: 978-1-5386-2720-4; 978-1-5386-2721-1
  • Benson, Niels; Bitzer, Lucas A.; Speich, Claudia; Schäfer, David; Erni, Daniel; Prost, Werner; Tegude, Franz-Josef; Schmechel, Roland (Hrsg.)
    Modeling of electron beam induced GaAs nanowire attraction
    In: Abstractband: MiFuN: Microstructural Functionality at the Nanoscale / International Workshop on Microstructural Functionality at the Nanoscale (MiFuN 2017), 4. - 6. Oktober 2017, Duisburg 2017
  • Schapers, Th.; Heedt, S.; Bringer, A.; Hardtdegen, H.; Schubert, J.; Grutzmacher, D.; Kammermeier, M.; Wenk, P.; Schliemann, J.; Prost, Werner
    Ballistic and spin transport in InAs nanowires
    In: Nanotechnology Materials and Devices Conference: conference proceedings / IEEE Nanotechnology Materials and Devices Conference, Toulouse, France, 2016, October 9th-12th 2016
    ISBN: 978-1-5090-4352-1; 978-1-5090-4353-8
  • Keller, Gregor; Tchegho, Anselme; Munstermann, Benjamin; Prost, Werner; Tegude, Franz-Josef; Suhara, Michihiko
    Characterization and modeling of zero bias RF-detection diodes based on triple barrier resonant tunneling structures
    In: International Conference on Indium Phosphide and Related Materials (IPRM), 2013 / International Conference on Indium Phosphide and Related Materials (IPRM), 2013 : 19 - 23 May 2013, Kobe, Japan 2013
    ISBN: 9781467361309; 978-1-4673-6131-6; 978-1-4673-6132-3 ISSN: 1092-8669
  • Benner, O.; Lysov, A.; Gutsche, C.; Keller, G.; Schmidt, C.; Prost, Werner; Tegude, Franz-Josef
    Junction field-effect transistor based on GaAs core-shell nanowires
    In: International Conference on Indium Phosphide and Related Materials (IPRM), 2013 / International Conference on Indium Phosphide and Related Materials (IPRM), 2013 : 19 - 23 May 2013, Kobe, Japan 2013
    ISBN: 978-1-4673-6130-9; 978-1-4673-6131-6 ISSN: 1092-8669
  • Keller, Gregor; Tchegho, Anselme; Münstermann, Benjamin; Prost, Werner; Tegude, Franz-Josef; Suhara, Michihiko
    Triple barrier resonant tunneling diodes for microwave signal generation and detection
    In: European Microwave Integrated Circuits Conference 2013 / EuMIC 2013; 6 - 8 Oct. 2013; Nuremberg, Germany 2013, S. 228 - 231
    ISBN: 978-1-4799-0266-8; 978-2-87487-032-3
  • Yoh, Kanji; Cui, Z.; Konishi, K.; Ohno, M.; Blekker, K.; Prost, Werner; Tegude, Franz-Josef; Harmand, J.-C.
    An InAs nanowire spin transistor with subthreshold slope of 20mV/dec
    In: 70th Annual Device Research Conference (DRC), 2012 / Annual Device Research Conference, 18 - 20 June 2012, The Pennsylvania State University, University Park, Pennsylvania 2012, S. 79 - 80
    ISBN: 978-1-4673-1163-2; 978-1-4673-1161-8; 978-1-4673-1164-9 ISSN: 1548-3770
  • Suhara, Michihiko; Takahagi, Satoshi; Asakawa, Kiyoto; Okazaki, Toshimichi; Nakamura, Masahito; Yamashita, Shin; Itagaki, Yosuke; Saito, Mitsufumi; Tchegho, Anselme; Keller, Gregor; Poloczek, Artur; Prost, Werner; Tegude, Franz-Josef
    Analysis of terahertz zero bias detectors by using a triple-barrier resonant tunneling diode integrated with a self-complementary bow-tie antenna
    In: 70th Annual Device Research Conference (DRC), 2012 / Annual Device Research Conference, 18 - 20 June 2012, The Pennsylvania State University, University Park, Pennsylvania 2012, S. 77 - 78
    ISBN: 978-1-4673-1163-2; 978-1-4673-1161-8; 978-1-4673-1164-9 ISSN: 1548-3770
  • Tegude, Franz-Josef; Prost, Werner
    III-V Semiconductor Nanowire Transistors
    In: Advances in III-V Semiconductor Nanowires and Nanodevices / Wang, Deli; Li, Jianye (Hrsg.) 2012, S. 129 - 144
    ISBN: 978-1-60805-415-2; 978-1-60805-052-9
  • Gutsche, Christoph; Regolin, Ingo; Lysov, Andrey; Blekker, Kai; Do, Quoc-Thai; Prost, Werner; Tegude, Franz-Josef
    III/V Nanowires for electronic and optoelectronic applications
    In: Nanoparticles from the gas phase: formation, structure, properties / Lorke, Axel (Hrsg.) 2012, S. 357 - 385
    ISBN: 978-3-642-28545-5; 978-3-642-28546-2
  • Grange, Rachel; Brönstrup, Gerald; Sergeyev, Anton; Richter, Jessica; Pertsch, Thomas; Tünnermann, Andreas; Christiansen, Silke; Leiterer, Christian; Fritzsche, Wolfgang; Gutsche, Christoph; Lysov, Andrey; Prost, Werner; Tegude, Franz-Josef
    Imaging of waveguiding and scattering interferences in individual GaAs nanowires via second-harmonic generation
    In: Nanophotonics IV / Andrews, David L.; Nanophotonics, 15 - 19 April 2012, Brussels, Belgium 2012
    ISBN: 978-0-8194-9116-9 ISSN: 0277-786X
  • Keller, Gregor; Tchegho, Anselme; Münstermann, Benjamin; Prost, Werner; Tegude, Franz-Josef
    Sensitive high frequency envelope detectors based on triple barrier resonant tunneling diodes
    In: International Conference on Indium Phosphide and Related Materials / IPRM 2012; Santa Barbara, United States; 27 - 30 August 2012 2012, S. 36 - 39
    ISBN: 978-1-4673-1724-5; 978-1-4673-1725-2
  • Lysov, Andrey; Gutsche, Christoph; Prost, Werner; Tegude, Franz-Josef
    Single GaAs nanowire photovoltaic devices under very high power illumination
    In: International Conference on Indium Phosphide and Related Materials / IPRM 2012; Santa Barbara, United States; 27 - 30 August 2012 2012, S. 253 - 256
    ISBN: 978-1-4673-1724-5
  • Tchegho Kamgaing, A.; Münstermann, Björn; Geitmann, Ralf; Benner, Oliver; Blekker, Kai; Prost, Werner; Tegude, Franz-Josef
    High performance submicron RTD design for mm-wave oscillator applications
    In: 23rd International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM 2011; May 22 - 26, 2011; Berlin, Germany 2011, S. 133 - 136
    ISBN: 978-1-4577-1753-6; 978-3-8007-3356-9
  • Lysov, Andrey; Gutsche, Christoph; Offer, Matthias; Regolin, Ingo; Prost, Werner; Tegude, Franz-Josef
    Spatially resolved photovoltaic performance of axial GaAs nanowire pn-diodes
    In: 2011 69th Annual Device Research Conference (DRC 2011) / Annual Device Research Conference, Santa Barbara, California, USA, 20 - 22 June 2011 2011, S. 53 - 54
    ISBN: 978-1-61284-243-1; 978-1-61284-241-7
  • Lysov, Andrey; Gutsche, Christoph; Offer, Matthias; Regolin, Ingo; Prost, Werner; Tegude, Franz-Josef
    The optoelectronic performance of axial and radial GaAs nanowire pn-diodes
    In: 23rd International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM 2011; May 22 - 26, 2011; Berlin, Germany 2011, S. 276 - 278
    ISBN: 978-3-8007-3356-9; 978-1-4577-1753-6
  • Prost, Werner; Tegude, Franz-Josef
    Fabrication and RF performance of InAs Nanowire FET
    In: Device Research Conference (DRC), 2010 / Device Research Conference, 21 - 23 June 2010, The University of Notre Dame, Notre Dame, Indiana 2010, S. 279 - 282
    ISBN: 978-1-4244-7870-5; 978-1-4244-6562-0 ISSN: 1548-3770
  • Tchegho, A.; Muenstermann, B.; Gutsche, C.; Poloczek, Artur; Blekker, K.; Prost, Werner; Tegude, Franz-Josef
    Scalable high-current density RTDs with low series resistance
    In: International Conference on Indium Phosphide & Related Materials (IPRM), 2010: Conference Proceedings / International Conference on Indium Phosphide & Related Materials, May 31, 2010 - June 4, 2010, Takamatsu Symbol Tower, Kagawa, Japan 2010, S. 358 - 361
    ISBN: 978-1-4244-5919-3; 978-1-4244-5920-9
  • Blekker, Kai; Do, Quoc Thai; Matiss, Andreas; Prost, Werner; Tegude, Franz-Josef
    High frequency characterisation of single inas nanowire field-effect transistors
    In: 20th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM 2008; Versailles, France; 25 - 29 May 2008 2008, S. 4703003
    ISBN: 978-1-4244-2258-6; 978-1-4244-2259-3
  • Matiss, Andreas; Poloczek, Artur; Brockerhoff, Wolfgang; Prost, Werner; Tegude, Franz-Josef
    Monostable-bistable threshold logic elements in a fully complementary optical receiver circuit for high frequency applications
    In: 20th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM 2008; Versailles, France; 25 - 29 May 2008 2008, S. 4702921
    ISBN: 978-1-4244-2258-6; 978-1-4244-2259-3
  • Waho, Takao; Yamada, A.; Okuyama, Hiroki; Khorenko, Victor; Do, T.; Prost, Werner
    A four-resonant-tunneling-diode (4RTD) NAND/NOR logic gate
    In: Proceedings of the IEEE International Symposium on Circuits and Systems / ISCAS 2007; New Orleans, United States; 27 - 30 May 2007 2007, S. 129 - 132
    ISBN: 1-4244-0920-9; 1-4244-0921-7
  • Poloczek, Artur; Weiß, Mario; Fedderwitz, Sascha; Stöhr, Andreas; Prost, Werner; Jäger, Dieter; Tegude, Franz-Josef
    Integrated InGaAs pin-diode on exactly oriented silicon (001) substrate suitable for 10 Gbit/s digital applications
    In: 20th Annual Meeting of the IEEE Lasers and Electro-Optics Society: Conference Proceedings / LEOS; Lake Buena Vista, United States; 21 - 25 October 2007 2007, S. 180 - 181
    ISBN: 978-1-4244-0924-2
  • Matiss, Andreas; Poloczek, Artur; Brockerhoff, Wolfgang; Prost, Werner; Tegude, Franz-Josef
    Large-signal analysis and ac modelling of sub-micron resonant tunnelling diodes
    In: 2nd European Microwave Integrated Circuits Conference: Conference Proceedings / EuMIC 2007; Munich, Germany; 8 - 12 October 2007 2007, S. 207 - 210
    ISBN: 978-2-87487-002-6
  • Prost, Werner; Blekker, Kai; Do, Quoc-Thai; Regolin, Ingo; Müller, Sven; Stichtenoth, Daniel; Wegener, Katharina; Ronning, Carsten; Tegude, Franz-Josef
    Modeling the carrier mobility in nanowire channel fet
    In: Low-Dimensional Materials: Synthesis, Assembly, Property Scaling and Modeling / MRS Spring Meeting 2007; San Francisco, United States; 9 - 13 April 2007 2007, S. 139 - 144
    ISBN: 978-1-60560-423-7
  • Do, Quoc Thai; Blekker, Kai; Regolin, Ingo; Prost, Werner; Tegude, Franz-Josef
    Single n-InAs nanowire MIS-field-effect transistor : Experimental and simulation results
    In: 19th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM '07; 14 - 18 May 2007; Matsue, Japan 2007, S. 392 - 395
    ISBN: 1-4244-0874-1
  • Matiss, Andreas; Poloczek, Artur; Stöhr, Andreas; Brockerhoff, Wolfgang; Prost, Werner; Tegude, Franz-Josef
    Sub-nanosecond pulse generation using resonant tunneling diodes for impulse radio
    In: IEEE International Conference on Ultra-Wideband 2007 / ICUWB; 24 - 27 September 2007; Singapore 2007, S. 354 - 359
    ISBN: 978-1-4244-0520-6; 978-1-4244-0521-3
  • Poloczek, Artur; Wang, Wei; Driesen, Jörn; Regolin, Ingo; Prost, Werner; Tegude, Franz-Josef
    Concept and Development of a New Mobile-Gate with All Optical Input
    In: German Microwave Conference / GeMic`06; Karslruhe, Germany; 28.03.2006 - 30.03.2006 2006
  • Do, Quoc Thai; Regolin, Ingo; Khorenko, Victor; Prost, Werner; Tegude, Franz-Josef
    Fabrication and electrical characterisation of n-InAs single nanowhisker field-effect transistors
    In: International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM 2006; Princeton; United States; 8 -11 May 2006 2006, S. 436 - 438
    ISBN: 0-7803-9558-1
  • Matiss, Andreas; Brockerhoff, Wolfgang; Poloczek, Artur; Prost, Werner; Tegude, Franz-Josef
    Low-temperature DC and RF measurement and modelling of InGaAs-InAlAs resonant tunneling diodes down to 15 K
    In: Proceedings of the 1st European Microwave Integrated Circuits Conference / EuMIC 2006; Manchester; United Kingdom; 10 - 13 September 2006 2006, S. 344 - 347
    ISBN: 2-9600551-8-7
  • Matiss, A.; Driesen, J.; Ehrich, S.; Prost, Werner; Tegude, Franz-Josef
    Bias Dependent Boolean Multivalue Logic Application of Resonant Tunneling Bipolar Transistors
    In: Proceedings of the German Microwave Conference / GeMic 2005, Ulm, Germany, 05.04.2005 - 07.04.2005 2005, S. 156 - 159
  • Khorenko, Victor; Regolin, Ingo; Neumann, Stefan; Do, Quoc Thai; Prost, Werner; Tegude, Franz-Josef
    Characterisation of GaAs nanowhiskers grown on GaAs and Si substrates
    In: 17th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM 2005; Glasgow, Scotland; 8 - 12 May 2005 2005, S. 363 - 366
    ISBN: 0-7803-8891-7
  • Prost, Werner; Kelly, Peter M.; Guttzeit, Andreas; Khorenko, Victor; Khorenko, E.; Matiss, Andreas; Driesen, Jörn; Mofor, Augustine Che; Bakin, Andrey; Poloczek, Artur; Neumann, Stefan; Stöhr, Andreas; Jäger, Dieter; Mc Ginnity, M.; Schlachetzki, Andreas; Tegude, Franz-Josef
    Design and modelling of A III/V mobile-gate with optical input on a silicon substrate
    In: Conference Proceedings - International Conference on Indium Phosphide and Related Materials / IPRM 2005; Glasgow, Scotland; 8 - 12 May 2005 2005, S. 17 - 20
    ISBN: 0-7803-8891-7
  • Krämer, Stefan; Neumann, Stefan; Prost, Werner; Tegude, Franz-Josef; Malzer, Stefan; Döhler, Gottfried H.
    Determination of piezo-electric fields in spontaneously ordered InGaAsP
    In: 27th International Conference on the Physics of Semiconductors / ICPS-27, Flagstaff, Arizona, 26 - 30 July 2004 2005, S. 119 - 120
    ISBN: 9780735402577
  • Prost, Werner; Khorenko, Victor; Mofor, Augustine Che; Bakin, Andrey; Khorenko, E.; Ehrich, Silja; Wehmann, Hergo Heinrich; Schlachetzki, Andreas; Tegude, Franz-Josef
    High-speed InP-based resonant tunnelling diode on silicon substrate
    In: Proceedings of the 35th European Solid-State Device Research Conference / ESSDERC 2005; Grenoble; France; 12 - 16 September 2005 2005, S. 257 - 260
    ISBN: 0-7803-9203-5
  • Do, Quoc Thai; Katzer, Klaus Dieter; Martinez-Albertos, José Luis; Khorenko, Victor; Mertin, Wolfgang; Prost, Werner; Moore, Barry D.; Tegude, Franz-Josef
    A nanoparticle-coated nanocrystal-gate for an INP-based heterostructure field-effect transistor
    In: 16th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM`04; Kagoshima, Japan; 31 May - 4 June 2004 2004, S. 435 - 438
    ISBN: 0-7803-8595-0
  • Prost, Werner
    Beiträge der Nanotechnologie zur Errhöhung der Funktionalität und Dichte in der Elektronik
    In: Workshop "Kontrollierte Selbstorganisation für zukünftige technische Anwendungen" / Düsseldorf, Germany; 16.06.2003 - 17.06.2003 2004, S. 34 - 40
    ISSN: 1436-5929
  • Khorenko, Victor; Mofor, Augustine Che; Bakin, Andrey; Neumann, Stefan; Guttzeit, Andreas; Wehmann, Hergo Heinrich; Prost, Werner; Schlachetzki, Andreas; Tegude, Franz-Josef
    Buffer optimization for InP-on-si (001) quasi-substrates
    In: 16th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM`04; Kagoshima, Japan; 31 May - 4 June 2004 2004, S. 118 - 121
    ISBN: 0-7803-8595-0
  • Khorenko, E.; Prost, Werner; Tegude, Franz-Josef; Stoffel, Mathieu; Duschl, R.; Dashiell, Michael W.; Schmidt, O.G.; Klimeck, Gerhard
    Manufacturability and electrical characteristics of Si/SiGe interband tunnelling diodes
    In: 5th International Conference on Semiconductor Devices and Microsystmes: Conference Proceedings / ASDAM 2004; Slomenice, Slovakia; 17 - 21 October 2004 2004, S. 29 - 32
    ISBN: 0-7803-8335-7
  • Alkeev, Nikolay V.; Velling, Peter; Khorenko, E.; Prost, Werner; Tegude, Franz-Josef
    Resonant tunneling diode immedunce dependence analysis
    In: Fifth International Kharkov Symposium on Physics and Engineering of Microwaves, Millimeter, and Submillimeter Waves: Symposium Proceedings / MSMW'04; Kharkov, Ukraine; 21 - 26 June 2004 / Kostenko, A.; Nosich, A.I.; Yakovenko, V.F. (Hrsg.) Jg. 2 2004, S. 566 - 568
    ISBN: 0780384113; 9780780384118
  • Neumann, Stefan; Prost, Werner; Tegude, Franz-Josef
    Growth of highly p-type doped GaAsSb : C for HBT application
    In: International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM`03; Santa Barbara, USA; 12.05.2003 - 16.05.2003 2003, S. 575 - 578
    ISBN: 0-7803-7704-4
  • Neumann, Stefan; Prost, Werner; Tegude, Franz-Josef
    InP based double heterojunction bipolar transistor with carbon doped GaAsSb : C base grown by LP-MOVPE
    In: Proceedings of the 11th European GAAS and Related III-V Compounds Application Symposium / GAAS`03; München, Germany; 06.10.2003 - 10.10.2003 2003, S. 255 - 257
  • Jin, Z.; Neumann, Stefan; Prost, Werner; Tegude, Franz-Josef
    Mechanism of Current Gain increase of Heterostructure Bipolar Transistors Passivated by Low-Temperature Deposited SiNx
    In: Proceedings of the 11th European GAAS and Related III-V Compounds Application Symposium / GAAS`03; München, Germany; 06.10.2003 - 10.10.2003 2003, S. 259 - 262
  • Jin, Zhi; Otten, F.; Neumann, Stefan; Reimann, Thorsten; Prost, Werner; Tegude, Franz-Josef
    Passivation of graded-base InP/InGaAs/InP double heterostructure bipolar transistors by room-temperature deposited SiNₓ
    In: International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM`03; Santa Barbara, USA; 12.05.2003 - 16.05.2003 2003, S. 156 - 159
    ISBN: 0-7803-7704-4
  • Glösekötter, Peter; Pacha, Christian; Goser, Karl F.; Prost, Werner; Kim, Samuel O.; van Husen, Holger; Reimann, Thorsten; Tegude, Franz-Josef
    Asynchronous circuit design based on the RTBT monostable-bistable logic transition element (MOBILE)
    In: Proceedings of the 15th Symposium on Integrated Circuits and Systems Design / SBCCI 2002; Porto Alegre, Brazil; 9 - 14 September 2002 2002, S. 365 - 370
    ISBN: 0-7695-1807-9
  • Prost, Werner; Kim, Samuel O.; Glösekötter, Peter; Pacha, Christian; van Husen, Holger; Reimann, Thorsten; Goser, Karl F.; Tegude, Franz-Josef
    Experimental threshold logic implementations based on resonant tunnelling diodes
    In: Proceedings of the 9th IEEE International Conference on Electronics, Circuits, and Systems / ICECS 2002; 15 - 18 September 2002; Dubrovnik, Croatia Jg. 2 2002, S. 669 - 672
    ISBN: 0-7803-7596-3
  • Neumann, Stefan; Spieler, Jochen; Blache, R.; Kiesel, Peter; Prost, Werner; Döhler, Gottfried H.; Tegude, Franz-Josef
    MOVPE growth and polarisation dependence of (dis-)ordered InGaAsP PIN diodes for optical fibre applications
    In: 14th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / Stockholm, Sweden; 12 - 16 May 2002 2002, S. 127 - 130
    ISBN: 0-7803-7320-0
  • Glösekötter, Peter; Pacha, Christian; Goser, Karl F.; Prost, Werner; Kim, Samuel; van Husen, Holger; Reimann, Thorsten; Tegude, Franz-Josef
    Pseudo dynamic gate design based on the Resonant Tunneling-Bipolar Transistor (RTBT)
    In: Proceedings of the 32nd European Solid-State Device Research Conference / ESSDERC 2002; Firenze, Italy; 24 - 26 September 2002 / Gnani, E.; Baccarani, G.; Rudan, M. (Hrsg.) 2002, S. 211 - 214
    ISBN: 88-900847-8-2
  • Prost, Werner
    Resonant tunnelling diodes for digital circuit applications
    In: 4th International Conference on Advanced Semiconductor Devices and Microsystems: Conference Proceedings / ASDAM 2002; Smolenice, Slovakia; 14 - 16 October 2002 2002, S. 115 - 124
    ISBN: 0-7803-7276-X
  • Otten, W.; Glösekötter, Peter; Velling, Peter; Brennemann, Andreas; Prost, Werner; Goser, Karl F.; Tegude, Franz-Josef
    InP-based monolithically integrated RTD/HBT MOBILE for logic circuits
    In: 13th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM 2001; Nara, Japan; 14.05.2001 - 18.05.2001 2001, S. 232 - 235
    ISBN: 0-7803-6700-6
  • Pacha, Christian; Prost, Werner; Tegude, Franz-Josef; Glösekötter, Peter; Goser, Karl
    Resonant Tunneling Device Logic : A Circuit Designer's Perspective
    In: Circuit Paradigm in the 21st Century: ECCTD ’01 ; Proceedings of the 15th European Conference on Circuit Theory ; Helsinki University of Technology, Finland, 28th - 31st August 2001 ; Vol. 1 / European Conference on Circuit Theory and Design (ECCTD) ; 28th - 31st August 2001, Espoo, Finland / Porra, Veikko (Hrsg.) 2001, S. 189 - 192
    ISBN: 951-22-6337-8; 951-22-5572-3
  • Prost, Werner; Auer, Uwe; Degenhardt, Jan; Brennemann, Andreas; Pacha, Christian; Goser, Karl F.; Tegude, Franz-Josef
    Technology of a depth-2 full-adder circuit using the InP RTD/HFET mobile
    In: 13th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / IPRM 2001; Nara, Japan; 14.05.2001 - 18.05.2001 2001, S. 228 - 231
    ISBN: 0-7803-6700-6
  • Prost, Werner; Auer, Uwe; Tegude, Franz-Josef; Pacha, Christian; Goser, Karl F.; Duschl, R.; Eberl, Karl; Schmidt, O.G.
    Tunnelling diode technology
    In: Proceedings of the 31s International Symposium on Multiple-Valued Logic / 22-24 May 2001; Warsaw, Poland 2001, S. 49 - 58
    ISBN: 0-7695-1083-3
  • Glösekötter, Peter; Pacha, Christian; Goser, Karl F.; Wirth, Gilson Inácio; Prost, Werner; Auer, Uwe; Agethen, Michael; Velling, Peter; Tegude, Franz-Josef
    Digital circuit design based on the resonant-tunneling-hetero-junction-bipolar-transistor
    In: Proceedings of the 13th Symposium on Integrated Circuits and Systems Design / SBCCI 2000; Manaus, Brazil; 18 - 24 September 2000 2000, S. 150 - 155
    ISBN: 0-7695-0843-X
  • Kim, Samuel O.; Velling, Peter; Auer, Uwe; Agethen, Michael; Prost, Werner; Tegude, Franz-Josef
    High f/sub T/, high current gain InP/InGaAs : C HBT grown by LP-MOVPE with non-gaseous sources
    In: International Conference on Indium Phosphide and Related Materials: Conference Proceedings / Williamsburg, USA; 14 -18 May 2000 2000, S. 470 - 472
    ISBN: 0-7803-6320-5
  • Kim, Samuel O.; Velling, Peter; Agethen, Michael; Reimann, Thorsten; Prost, Werner; Tegude, Franz-Josef
    InP-Based HBT with Graded InGaAlAs Base Layer Grown by LP-MOVPE
    In: Proceedings of the European GaAs and other Semiconductor Application Symposium / GAAS AS 2000; Paris, France; 02.10.2000 - 03.10.2000 2000
  • Velling, Peter; Agethen, Michael; Herenda, E.; Prost, Werner; Stolz, W.; Tegude, Franz-Josef
    LP-MOVPE Growth of Carbon Doped In0.48Ga0.52P/GaAs HBT Using an All-Liquid-Source Configuration
    In: 26th International Symposium on Compound Semiconductors / ISCS 2000; Berlin, Germany; 22.08.2000 - 26.08.2000 2000
  • Fix, W.; Welker, M.; Geisselbrecht, W.; Kiesel, P.; Döhler, G.H.; Velling, Peter; Prost, Werner; Tegude, Franz-Josef
    A monolithically integrated smart pixel based on a photoconductive switch and a n-i-p-i modulator
    In: Conference on Lasers and Electro-Optics / CLEO '99; Baltimore, USA; 23.05.1999 - 28.05.1999 1999
    ISBN: 1-55752-595-1
  • Auer, Uwe; Prost, Werner; Brockerhoff, Wolfgang; Tegude, Franz-Josef
    Consistent physical model for the gate-leakage and breakdown in InAlAs/InGaAs HFET's
    In: Proceedings of the 11th International Conference on Indium Phosphide and Related Materials / IPRM`99; Davos, Switz; 16 -20 May 1999 1999, S. 439 - 442
    ISBN: 0-7803-5562-8
  • Velling, Peter; Agethen, Michael; Herenda, E.; Prost, Werner; Stolz, W.; Tegude, Franz-Josef
    LP-MOVPE grown GaAs- and InP-based HBTs using all-liquid alternative sources
    In: Proceedings of the 11th International Conference on Indium Phosphide and Related Materials / IPRM`99; Davos, Switz; 16 -20 May 1999 1999, S. 467 - 470
    ISBN: 0-7803-5562-8
  • Prost, Werner; Auer, Uwe; Pacha, Christian; Brennemann, Andreas; Goser, Karl F.; Tegude, Franz-Josef
    Novel MOBILE gates with low-power, relaxed parameter sensitivity, and increased driving capability
    In: Proceedings of the 11th International Conference on Indium Phosphide and Related Materials / IPRM`99; Davos, Switz; 16 -20 May 1999 1999, S. 411 - 414
    ISBN: 0-7803-5562-8
  • Pacha, Christian; Gloesekoetter, Peter; Goser, Karl F.; Auer, Uwe; Prost, Werner; Tegude, Franz-Josef
    Resonant tunneling transistors for threshold logic circuit applications
    In: Proceedings of the 9th IEEE Great Lakes Symposium on VLSI / GLSVLSI '99; Ann Arbor, USA; 4 - 6 March 1999 1999, S. 344 - 345
    ISBN: 0-7695-0104-4
  • Pacha, Christian; Goser, Karl; Brennemann, Andreas; Prost, Werner
    A threshold logic full adder based on resonant tunneling transistors
    In: 24th European Solid-State Circuits Conference / ESSCIRC 1998; The Hague; Netherlands; 22 - 24 September 1998 1998, S. 428 - 431
  • Auer, Uwe; Brockerhoff, Wolfgang; Prost, Werner; Tegude, Franz-Josef
    Analytic simulation of impact ionization in InAlAs/InGaAs HFET's
    In: Proceedings of the 10th International Conference on Indium Phosphide and Related Materials / IPRM`98, Tsukuba, Japan, 11.05.1998 - 15.05.1998 1998, S. 659 - 662
  • Prost, Werner; Auer, Uwe; Pacha, Christian; Brennemann, Andreas; Janßen, Guido; Bertenburg, Ralf M.; Brockerhoff, Wolfgang; Bushehri, E.; Goser, Karl F.; Tegude, Franz-Josef
    InP-based HFET's and RTD's for high speed digital circuitry
    In: Conference Proceedings of the International Symposium on Signals, Systems and Electronics / ISSSE'98; Pisa, Italy; 29 September - 2 October 1998 1998, S. 45 - 49
    ISBN: 0-7803-4900-8
  • Prost, Werner; Tegude, Franz-Josef
    Tunnelstrukturen - Grundlagen und Bauelemente
    In: Nanostrukturen in Halbleitern / Blockseminar am 1. und 2. Oktober 1997 im Rahmen des Graduiertenkollegs "Metrologie in Physik und Technik" der Technischen Universität Braunschweig und der Physikalisch-Technischen Bundesanstalt Braunschweig / Schlachetzki, Andreas (Hrsg.) 1998, S. 19 - 24
    ISBN: 3-89701-115-8
  • Auer, Uwe; Janßen, Guido; Agethen, Michael; Reuter, Ralf; Prost, Werner; Tegude, Franz-Josef
    A novel 3-D integrated RTD-HFET frequency multiplier
    In: International Conference on Indium Phosphide and Related Materials 1997: Conference Proceedings / IPRM`97; Cape Cod, USA; 11-15 May 1997 1997, S. 373
    ISBN: 0-7803-3898-7 ISSN: 1092-8669
  • Schroeder, W.; Prost, Werner; Wolff, I.
    Full wave BIE analysis of travelling waves in unbiased/velocity saturated FET structures with linearly controlled current density
    In: 1997 IEEE MTT-S International Microwave Symposium Digest / Denver, USA; 8-13 June 1997 Jg. 1 1997, S. 159
    ISBN: 0-7803-3814-6
  • Daumann, Walter; Scheffer, F.; Prost, Werner; Tegude, Franz-Josef
    High power InAlAs/InGaAs/InP-HFET grown by MOVPE
    In: International Conference on Indium Phosphide and Related Materials 1997: Conference Proceedings / IPRM`97; Cape Cod, USA; 11-15 May 1997 1997, S. 24 - 27
    ISBN: 0-7803-3898-7 ISSN: 1092-8669
  • Prost, Werner; Kruis, Frank Einar; Otten, Frank; Rellinghaus, B.; Auer, Uwe; Peled, A.
    Monodisperse Aerosol Particle Deposition : Prospects for Nanoelectronics
    In: Micro-and-Nano-Engineering: Book of Abstracts / Micro-and-Nano-Engineering, Athen, September 15-18, 1997 1997
  • Prost, Werner; Auer, Uwe; Velling, Peter; Janßen, Guido; Agethen, Michael; Haase, M.; Reuter, Ralf; Lakner, Hubert; Tegude, Franz-Josef
    Novel Monolithic RTD/3-Terminal Device Combinations on s.i. InP for Frequency Multiplication
    In: Proceedings of the State-of-the-Art Program of Compound Semiconductors / SOTAPOCS 1997, Montreal, Canada, 04.05.1997 - 09.05.1997 1997, S. 229 - 241
  • Meneghesso, Gaudenzio; Manfredi, Manfredo; Pavesi, Maura; Auer, Uwe; Ellrodt, P.; Prost, Werner; Tegude, Franz-Josef; Canali, Claudio; Zanoni, Enrico
    Anomalous impact-ionization gate current in high breakdown InP-based HEMT's
    In: Proceedings of the 26th European Solid-State Device Research Conference / ESSDERC 1996; Bologna, Italy; 9 - 11 September 1996 1996, S. 1001 - 1004
    ISBN: 9782863321966 ISSN: 1930-8876
  • Auer, Uwe; Reuter, Ralf; Ellrodt, P.; Prost, Werner; Tegude, Franz-Josef
    Characterization and analysis of a new gate leakage mechanism at high drain bias in InAlAs/InGaAs heterostructure field-effect transistors
    In: 8th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / Schwaebisch Gmuend, Germany; 21.04.1996 - 25.04.1996 1996, S. 650 - 653
    ISBN: 0-7803-3283-0
  • Velling, Peter; Janßen, Guido; Agethen, Michael; Prost, Werner; Auer, Uwe; Reuter, Ralf; Tegude, Franz-Josef
    On the design and modelling of novel 3-D integrated RTD/HBT device frequency multiplier circuits
    In: Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications / EDMO 1996; Leeds, UK; 25 - 26 November 1996 1996, S. 176 - 181
    ISBN: 0-7803-3130-3
  • Prost, Werner; Tegude, Franz-Josef
    High speed, high gain InP-based heterostructure FETs with high breakdown voltage and low leakage
    In: 7th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / Sapporo, Japan; 9 - 13 May 1995 1995, S. 729 - 732
  • Auer, Uwe; Reuter, Ralf; Ellrodt, P.; Heedt, Christian H.; Prost, Werner; Tegude, Franz-Josef
    Impact of pseudomorphic AlAs spacer layers on the gate leakage current of InAlAs/InGaAs heterostructure field-effect transistors
    In: 7th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / Sapporo, Japan; 9 - 13 May 1995 1995, S. 424 - 427
  • Auer, Uwe; Reuter, Ralf; Heedt, Christian H.; Künzel, Harald M.; Prost, Werner; Tegude, Franz-Josef
    InAlAs/InGaAs HFET with extremely high device breakdown using an optimized buffer layer structure
    In: 6th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / Santa Barbara, USA; 27 - 31 March 1994 1994, S. 443 - 446
    ISBN: 0-7803-1476-X
  • Scheffer, F.; Lindner, A.; Heedt, Christian H.; Reuter, Ralf; Liu, Q.; Prost, Werner; Tegude, Franz-Josef
    In₀.₅Ga₀.₅ spacer layer for high drain breakdown voltage InGaAs/InAlAs HFET on InP grown by MOVPE
    In: 6th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / Santa Barbara, USA; 27 - 31 March 1994 1994, S. 439 - 442
  • Lindner, A.; Liu, Q.; Scheffer, F.; Prost, Werner; Tegude, Franz-Josef
    Low-pressure metallorganic vapor phase epitaxy (LP-MOVPE) growth and characterization of short-period strained-layer superlattices (SPSLSs) on InP substrates
    In: Epitaxial Growth Processes / Los Angeles, USA; 26 - 27 January 1994 1994, S. 75 - 83
    ISBN: 0819414352 ISSN: 0277-786X
  • Lindner, A.; Liu, Q.; Scheffer, F.; Prost, Werner; Tegude, Franz-Josef
    Realization of highly strained short period InAs/GaAs superlattices by means of LP-MOVPE growth on InP substrates
    In: 6th International Conference on Indium Phosphide and Related Materials: Conference Proceedings / Santa Barbara, USA; 27 - 31 March 1994 1994, S. 579 - 580
  • Heedt, C.; Buchali, F.; Prost, Werner; Tegude, Franz-Josef; Fritzsche, D.; Nickel, H.
    Characterization of Impact-Ionization in InAlAs/InGaAs/InP HEMT Structures using a Novel Photocurrent-Measurement Technique
    In: Proceedings of the '5th International Conference on InP and Related Materials / IPRM´93; Paris, France; 19.04.1993 - 22.04.1993 1993, S. 243 - 250
  • Lakner, Hubert; Bollig, B.; Volmich, P.; Liu, Q.; Scheffer, F.; Lindner, A.; Prost, Werner
    High-Resolution STEM-Z-Contrast Imaging and XRD : Two New Approaches for the Characterization of GaInP/GaAs-Heterostructures
    In: Proceedings of the '8th Conference on Microscopy of Semiconductor Materials / Oxford, U.K.; 05.04.1993 - 08.04.1993 1993, S. 497 - 502
  • Prost, Werner; Heedt, C.; Scheffer, F.; Lindner, A.; Reuter, R.; Tegude, Franz-Josef
    Pseudomorphic Ga0.5In0.5P barriers grown by MOVPE for high drain breakdown and low leakage HFET on InP
    In: Proceedings of the '20th International Symposium on GaAs and Related Compounds / GaAs RC´93; Freiburg, Germany; 29.08.1993 - 02.09.1993 1993, S. 827 - 828
  • Buchali, F.; Heedt, Christian H.; Prost, Werner; Gyuro, Imre; Meschede, Herbert; Tegude, Franz-Josef
    Analysis of gate leakage on MOVPE grown InAlAs/InGaAs-HFET
    In: Proceedings of the 22nd European Solid State Device Research Conference / ESSDERC '92, 14-17 September 1992, Leuven, Belgium 1992, S. 401 - 404
    ISBN: 0444894780 ISSN: 1930-8876
  • Scheffer, F.; Buchali, F.; Lindner, A.; Liu, Q.; Wiersch, A.; Kohl, Andreas; Prost, Werner
    Characterization of MOVPE grown GaInP as wide band gap Schottky barrier layer
    In: LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics and Smart Pixels: 4th International Conference on Indium Phosphide and Related Materials / IPRM 1992; Newport, United States; 21 - 24 April 1992 1992, S. 538 - 541
    ISBN: 0780305221; 9780780305229
  • Buchali, F.; Scheffer, F.; Heedt, Christian H.; Gyuro, Imre; Speier, Peter; Prost, Werner; Tegude, Franz-Josef
    Evidence of oxygen in undoped InAIAs MOVPE layers
    In: LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics and Smart Pixels: 4th International Conference on Indium Phosphide and Related Materials / IPRM 1992; Newport, United States; 21 - 24 April 1992 1992, S. 534 - 537
    ISBN: 0780305221; 9780780305229
  • Heedt, C.; Buchali, F.; Prost, Werner; Fritzsche, D.; Nickel, H.; Tegude, Franz-Josef
    Extremly low gate leakage InAlAs/InGaAs HEMT
    In: Proceedings of the 19th International Symposium on GaAs and Related Compounds / GaAs RC`92; Karuizawa, Japan; 28.09.1992 - 02.10.1992 1992, S. 941 - 942
  • Buchali, F.; Gyuro, I.; Scheffer, F.; Prost, Werner; Block, M.; von Wendorff, W.C.; Heymann, G.; Tegude, Franz-Josef; Speier, P.; Jäger, Dieter
    Interdigitated electrode and coplanar waveguide InAlAs/InGaAs MSM photodetectors grown by LP MOVPE
    In: Proceedings of the Fourth Indium Phosphide and Related Materials Conference / 4th International Conference on Indium Phosphide and Related Materials - IPRM'92, 21.-24. April 1992, Newport, United States 1992, S. 596 - 599
    ISBN: 0-7803-0522-1
  • Heedt, Christian H.; Gottwald, Péter; Buchali, F.; Prost, Werner; Künzel, Harald M.; Tegude, Franz-Josef
    On the optimization and reliability of ohmic-And Schottky contacts to InAlAs/InGaAs HFET
    In: LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics and Smart Pixels: 4th International Conference on Indium Phosphide and Related Materials / IPRM 1992; Newport, United States; 21 - 24 April 1992 1992, S. 238 - 241
    ISBN: 0780305221; 9780780305229
  • Heedt, Christian H.; Gottwald, Péter; Prost, Werner; Tegude, Franz-Josef; Künzel, Harald M.; Dickmann, Jürgen; Dämbkes, Heinrich
    Material characterisation of InGaAs/InAlAs heterostructure field effect transistors with heavily doped n-type InAlAs donor layer
    In: Third International Conference on Indium Phosphide and Related Materials: Conference Proceedings / 3rd International Conference on Indium Phosphide and Related Materials; Cardiff, Wales; 8 - 11 April 1991 1991, S. 284 - 287
    ISBN: 0-87942-626-8
  • Prost, Werner
    Technology for III/V-Semiconductor HFET Devices
    In: III-V Microelectronics 1991, S. 277 - 313
    ISBN: 978-0-444-88990-4
  • Brockerhoff, Wolfgang; Stöhr, Andreas; Prost, Werner; Meschede, H.; Heime, K.
    Dispersion und Arbeitspunktabhängigkeit des Ausgangswiderstandes in Heterostruktur-Feldeffekttransistoren
    In: ITG-Fachtagung "Heterostruktur-Bauelemente" / Schwäbisch Gmünd, Germany; 25.04.1990 - 27.04.1990 1990, S. 267 - 271
  • Zumkley, Stefan; Wingen, Georg; Borghs, Gustaaf; Scheffer, F.; Prost, Werner; Jäger, Dieter
    Electro-optical modulation in AlGaAs/GaAs distributed feedback structures
    In: High Speed Phenomena in Photonic Materials and Optical Bistability / The International Congress on Optical Science and Engineering, 12-16 March 1990, The Hague, The Netherlands / Jäger, Dieter (Hrsg.) 1990, S. 202 - 208
    ISBN: 0-8194-0327-X
  • Prost, Werner; Bettermann, W.; Gyuro, I.; Dämbkes, H.; Heime, K.; Heuken, M.; Schlapp, W.
    Hall-equivalent determination of carrier mobility and concentration in SQW-, MQW-, and HIG-FET channels
    In: Proceedings of the 16th International Symposium on GaAs and Related Compounds / GaAs RC´89; Karuizawa, Japan; 25 - 29 September 1989; Ikoma, T. 1990, S. 501 - 506
    ISBN: 0-85498-065-2
  • Gyuro, I.; Heuken, M.; Reemtsma, J.; Prost, Werner; Heime, K.
    Herstellung und Untersuchung von Heterostruktur-Feldeffekttransistoren mit isoliertem Gate (HIGFET)
    In: Proceedings ITG-Fachtagung "Heterostruktur-Bauelemente" / Schwaebisch Gmuend, Germany; 25.04.1990 - 27.04.1990 1990, S. 255 - 260
  • Zumkley, S.; Wingen, G.; Scheffer, F.; Prost, Werner; Jäger, Dieter
    Photonic Switching and SEED Effect in AlGaAs/GaAs DFB Structures Grown by MOVPE
    In: Photonic Switching II: Proceedings of the International Topical Meeting / International Topical Meeting, Kobe, Japan, April 12–14, 1990 / Tada, Kunio; Hinton, H. Scott (Hrsg.) 1990, S. 185 - 189
    ISBN: 978-3-642-76023-5; 978-3-642-76025-9
  • Meschede, H.; Kraus, J.; Bertenburg, Ralf M.; Brockerhoff, Wolfgang; Prost, Werner; Heime, K.; Nickel, H.; Schlapp, W.; Lösch, R.
    Submicron pseudomorphic Al0.2Ga0.8As/InGaAs-HFET made by Conventional Optical Lithography for Microwave Circuit Applications above 100GHz
    In: Proceedings of the '20th European Solid State Device Research Conference / ESSDERC`90; Nottingham, U.K.; 10.09.1990 - 13.09.1990 1990, S. 105 - 108
  • Kraus, J.; Meschede, H.; Brockerhoff, Wolfgang; Prost, Werner; Heime, K.; Nickel, H.; Lösch, R.; Schlapp, W.
    Submikrometer Al0.2Ga0.8As/In0.25Ga0.75As Mehrfinger-HFET für Mikrowellenschaltungen über 100 GHz hergestellt mit optischer Kontaktlithographie
    In: Proceedings ITG-Fachtagung "Heterostruktur-Bauelemente" / Schwaebisch Gmuend, Germany; 25.04.1990 - 27.04.1990 1990, S. 29 - 30
  • Prost, Werner; Brockerhoff, Wolfgang; Heuken, M.; Kugler, S.; Heime, Klaus; Schlapp, W.; Weimann, G.
    Shallow and Deep Impurity Investigations : The Important Step Towards a Microwave Field-Effect Transistor Working at Cryogenic Temperatures
    In: Properties of Impurity States in Superlattice Semiconductors / Fong, C. Y.; Batra, Inder P.; Ciraci, S. (Hrsg.) 1988, S. 135 - 146
    ISBN: 978-1-4684-5555-7; 978-1-4684-5553-3
  • Prost, Werner; Brockerhoff, Wolfgang; Heime, Klaus; Schlapp, W.; Weimann, Günter W.
    Device performance and transport properties of HFETs at low temperatures
    In: Proceedings of the 14th International Symposium on GaAs and Related Compounds / GaAs RC´87; Heraklion, Greece; 28.09.1987 - 01.10.1987 1987, S. 681 - 684
  • Heuken, M.; Prost, Werner; Kugler, S.; Heime, Klaus; Schlapp, W.; Weimann, Günter W.
    Improved 77K Performance of AlAs/GaAs Superlattice Heterostructure Field-Effect-Transistors (SL HFET)
    In: Proceedings of the 13th International Symposium on Gallium Arsenide and Related Compounds / Las Vegas, Nevada; 28 September – 1 October 1986 1987, S. 563 - 568
    ISSN: 0305-2346; 0951-3248
  • Prost, Werner; Brockerhoff, Wolfgang; Heime, Klaus; Ploog, Klaus H.; Schlapp, Winfried; Weimann, Günter W.; Morkoç, Hadis D.
    Application of the Magnetotransconductance Mobility Measurements Method to Two-Dimensional Electron Gas FETs
    In: Semiconductor Quantum Well Structures and Superlattices: Papers / MRS-Europe Spring Meeting (Symposium 3); 13-15 Mai 1985; Strasbourg/France 1986, S. 91 - 96
    ISBN: 2868830153
  • Vorträge

  • Arzi, Khaled; Clochiatti, Simone; Suzuki, S.; Rennings, Andreas; Erni, Daniel; Weimann, Nils; Asada, M.; Prost, Werner;
    Triple-barrier resonant tunneling diode
    1st MARIE IRTG Spring School, International Research Training Group (IRTG), DFG CRC/TRR 196 MARIE, 28-29 March 2019, Dortmund, Germany,
    (2019)
  • Arzi, Khaled; Suzuki, S.; Rennings, Andreas; Erni, Daniel; Weimann, Nils; Asada, M.; Prost, Werner;
    On the sensitivity of triple-barrier resonant-tunneling (sub-) mm-wave detectors
    Progress in Electromagnetics Research Symposium, 2018, Toyama, Japan,
    Toyama (2018)
  • ; Arzi, K.; Suzuki, S.; Rennings, Andreas; Erni, Daniel; Weimann, Nils; Asada, M.; Prost, Werner
    Subharmonic signal generation and injection locking in resonant-tunneling-diode Terahertz oscillator
    79th Japan Society of Applied Physics (JSAP 2018) Autumn Meeting, Nagoya Congress Center, Nagoya, Japan Sept. 18-21, 2018,
    Nagoya (2018)
  • Fahle, M.; Blumberg, C.; Yacoub, H.; Prost, Werner; Kalisch, H.; Heuken, M.; Vescan, A.;
    Effect of AIN layer thickness on wafer bowing and vertical breakdown voltage of GaN-on-Si
    European Workshop on MOVPE and Rel. Growth Techniques (EW MOVPE), Aachen, Germany, 02.06.2013 - 05.06.2013,
    Aachen, Germany (2013)
  • Steidl, M.; Korte, S.; Prost, Werner; Voigtländer, B.; Kleinschmidt, P.; Hannappel, T.;
    Investigation of the doping profile of Zn-doped GaAs nanowires by a multitip STM
    European Workshop on MOVPE and Rel. Growth Techniques (EW MOVPE), Aachen, Germany, 02.06.2013 - 05.06.2013,
    Aachen, Germany (2013)
  • ; Regolin, Ingo; Gutsche, C.; Lysov, A.; Prost, Werner; Malek, Margarethe; Vinaji, S.; Mertin, Wolfgang; Bacher, Gerd; Offer, Matthias; Lorke, Axel; Tegude, Franz-Josef
    Axial doping profile in VLS grown GaAs:Zn nanowires
    13th European Workshop on Metalorganic Vapor Phase Epitaxy, 7. – 10. Juni 2009, Ulm, Germany,
    (2009)
  • Prost, Werner; Poloczek, A.; Matiss, A.; Driesen, J.; Tegude, Franz-Josef;
    High-Speed Monostable-Bistable Transition Logic Element Gates with Optical Inputs at 1.3µm/1.55µm
    XXII Conference on Design of Circuits and Integrated Systems 2007 (DCIS); Sevilla, Spain; 21.11.2007 - 23.11.2007,
    Sevilla, Spain (2007)
  • Prost, Werner; Khorenko, V.; Kelly, P.; Mofor, A.-C.; Neumann, S.; Poloczek, Artur; Brennenmann, A.; Matiss, A.; Bakin, A.; Stöhr, Andreas; Jäger, Dieter; Ginnity, M. Mc; Schlachetzki, A.; Tegude, Franz-Josef;
    High Performance III/V RTD and PIN Diodes on a silicon substrate
    6th Topical Workshop on Heterostructure Microelectronics, TWHM Awaji Island, Hyogo, Japan, Aug. 22-25, 2005,
    Awaji Island, Hyogo (2005)
  • Neumann, Stefan; Topaloglu, S.; Driesen, J.; Jin, Z.; Prost, Werner; Tegude, Franz-Josef;
    Study of ohmic contacts and interface layers of carbon doped GaAsSb/InP heterostructures for DHBT application
    12th International Conference on Metalorganic Vapour Phase Epitaxy (MOVPE), Lahaina, Hawaii, USA, 30.05.2004 - 04.06.2004,
    Lahaina, USA (2004)
  • Khorenko, E.; Ehrich, S.; Prost, Werner; Tegude, Franz-Josef;
    Tunneling Diodes for Compact High Speed Circuits
    3rd Joint Symposium on Opto- and Microelectronic Devices and Circuits (SODC), Wuhan, China, 21.05.2004 - 30.05.2004,
    Wuhan, China (2004)
  • Prost, Werner; Neumann, Stefan; Velling, Peter; Tegude, Franz-Josef;
    LP-MOVPE growth for high-speed electronic devices on InP
    10th European Workshop on MOVPE and Rel. Growth Techniques (EW MOVPE), Leece, Italy, 08.06.2003 - 11.06.2003,
    Leece, Italy (2003)
  • Otten, Frank; Kruis, Frank Einar; Prost, Werner; Tegude, Franz-Josef; Fissan, Heinz;
    Deposition of Gas-Phase Generated PbS Nanocrystals onto Patterned Substrates
    7th International Conference on Nanometer-scale Science and Technology (Nano), 21th European Conference on Surface Science (ECOSS) , Malmö, Sweden, 24.06.2005 - 28.06.2002,
    Malmö, Sweden (2002)
  • Spieler, J.; Blache, R.; Lese, A.; Kiesel, P.; Döhler, G.H.; Neumann, S.; Velling, Peter; Prost, Werner; Tegude, Franz-Josef;
    Spontaneous Group III and V Superlattice Ordering in InGaAsP
    26th International Conference on the Physics of Semiconductors (ICPS), Edingburgh, U.K., 29.07.2002 - 02.08.2002,
    Edingburgh, U.K. (2002)
  • Spieler, J.; Blache, R.; Lese, A.; Kiesel, P.; Döhler, G.H.; Neumann, S.; Velling, Peter; Prost, Werner; Tegude, Franz-Josef;
    Spontaneous Group III and V Superlattice Ordering in InGaAsP
    International Conference on Signal Processing (ICSP), Beijing, China, 26.08.2002 - 30.08.2002,
    Beijing, China (2002)
  • Prost, Werner; Velling, Peter; Janßen, Guido; Auer, Uwe; Brennemann, Andreas; Glösekötter, P.; Goser, K.F.; Tegude, Franz-Josef;
    Resonant-Tunnelling 3-Terminal Devices for High-Speed Logic Application
    24th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Aegean Sea, Greece, 29.05.2000 - 02.06.2000,
    Aegean Sea, Greece (2000)
  • Velling, Peter; Agethen, Michael; Herenda, E.; Prost, Werner; Stolz, W.; Tegude, Franz-Josef;
    All Liquid Source Growth of Carbon Doped In0.53Ga0.47As/InP HBT by Means of LP-MOVPE
    8th Europ. Workshop on MOVPE and Rel. Growth Techniques (EW MOVPE), Prag, Czech Republic, 08.06.1999 - 11.06.1999,
    Prag, Czech Republic (1999)
  • Prost, Werner; Tegude, Franz-Josef;
    Winziger als die Mikro-Elektronik
    Forum Forschung '99, Gerhard-Mercator-Universität Duisburg, 1999,
    Duisburg (1999)
  • Janßen, Guido; Auer, Uwe; Brennemann, Andreas; Prost, Werner; Tegude, Franz-Josef;
    Manufacturability of III/V Resonant Tunneling Diodes for Logic Circuit Applications
    3rd Workshop on Innovative Circuits and Systems for Nano Electronics (Nano-EL), München, Germany, 05.10.1998 - 06.10.1998,
    (1998)
  • Velling, Peter; Haase, M.; Agethen, Michael; Janßen, Guido; Prost, Werner; Tegude, Franz-Josef;
    3D-Integration of Quantum-Effect Devices (RTD) in HBT's by Means of LP-MOVPE
    7th European Workshop on MOVPE and Rel. Growth Techniques (EW MOVPE), Berlin, Germany, 08.06.1997 - 11.06.1997,
    Berlin, Germany (1997)
  • Prost, Werner; Haase, M.; Velling, Peter; Liu, Q.; Tegude, Franz-Josef;
    HR XRD for the Analysis of Ultra-Thin Centro-Symmetric Strained DB-RTD Heterostructures
    European Materials Research Conference (E-MRS), Strasbourg, France, 16.06.1997 - 20.06.1997,
    Strasbourg, France (1997)
  • Prost, Werner; Auer, Uwe; Janßen, Guido; Reuter, Ralf; Agethen, Michael; Tegude, Franz-Josef;
    Merged Heterostructure FET/RTD Combination for (Sub-)Millimeter-Wave Generation
    4th International Workshop on Terahertz Electronics; Erlangen, Germany; 05.09.1996 - 06.09.1996,
    Erlangen, Germany (1996)
  • Janßen, G.; Prost, Werner; Reuter, Ralf; Auer, Uwe; Schroeder, W.; Tegude, Franz-Josef;
    Modeling the Potential of Novel 3-D Integrated RTD/HFET Frequency Multiplier Circuits
    International Workshop on Millimeterwaves, Orvieto, Italy, 11.04.1996 - 12.04.1996,
    Orvieto, Italy (1996)
  • Tegude, Franz-Josef; Lindner, A.; Prost, Werner; Wiersch, A.;
    On Carbon Doping of InGaAs for InP Based Heterojunction Bipolar Transistors
    20th European Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Vilnius, Litauen, 19.05.1996 - 22.05.1996,
    Vilnius, Litauen (1996)
  • Prost, Werner;
    Plasma-CVD für Siliziumnitrid auf III-V Halbleitern
    MOCVD- und Plasma-CVD Prozesse für opto- und mikroelektronische Anwendungen; Aachen, Germany; 05.11.1996,
    Aachen, Germany (1996)
  • Lindner, A.; Prost, Werner; Wiersch, A.; Liu, Q.; Scheffer, F.; Kuphal, E.; Tegude, Franz-Josef;
    Carbon-Doping of MOVPE-Grown LT-In0.53Ga0.47As : On the Doping Mechanism and InGaAs/InP HBT Device Characteristics
    European Workshop on MOVPE and Rel. Growth Techniques (EW MOVPE), Gent, Belgium, 25.06.1995 - 28.06.1995',
    Gent, Belgium (1995)
  • Lakner, Hubert; Stammen, Jörg; Liu, Q.; Prost, Werner;
    Characterization of Highly Strained GaxIn1-xP/InP Interfaces (x = 0.5)
    9th Conference on Microscopy of Semiconductor Materials, Oxford, U.K., 20.03.1995 - 23.03.1995,
    Oxford, U.K. (1995)
  • Lindner, A.; Scheffer, F.; Liu, Q.; Prost, Werner; Tegude, Franz-Josef;
    LP-growth and characterization of short-period strained-layer superlattices (SPSLSs) on InP substrates
    5th European Workshop on MOVPE and Rel. Growth Techniques (EW MOVPE), Malmö, Sweden, 02.06.1993 - 04.06.1993,
    Malmö, Sweden (1993)
  • Kraus, Jörg; Meschede, Herbert; Liu, Q.; Prost, Werner; Tegude, Franz-Josef; Lakner, Hubert; Kubalek, Erich;
    InyGa₁₋yAs{plus 45 degree rule}GaAs interface smoothing by GaAs monolayers in highly strained graded superlattice channels (0.2 ≤ y ≤ 0.4) for pseudomorphic AlₓGa₁₋ₓAs{plus 45 degree rule}InyGa₁₋yAs HFET
    7th International Conference on Molecular Beam Epitaxy (MBE), Schwäbisch Gmünd, Germany, 24.08.1992 - 28.08.1992,
    Schwäbisch Gmünd, Germany (1992)
  • Wingen, G.; Zumkley, S.; Scheffer, F.; Prost, Werner; Borghs, G.; Chaix, C.; Jäger, Dieter;
    Electrooptical light modulation and SEED effect in surface oriented AlGaAs/GaAs Bragg reflectors
    Meeting on Future Directions for Optics in Computers,
    Besancon, France (1990)

Scientific Vita

1984 Dipl.-Ing. Electrical Engineering, University -GH- Duisburg
1989 PhD (Engineering), Gerhard-Mercator University Duisburg
1989 Group leader Heteroepitaxy and Nanotechnology, Solid-State Electronics Department

Awards

1991 Bennigsen-Foerder-Award for Innovative Research of Young Scientists

Merits (8/2015)

  more than 100 Publications in peer-reviewed journals and 1 patent
  h-index = 16

Professional Activities

1994 Member of the German Association for crystal growth and crystal pulling (DGKK)
1994 Workshop Chair: 9th Working group meeting "Epitaxy of III/V – semiconductors", Duisburg
1998-2004 Coordinator of two EU Projects: "Logic Circuits with Reduced Complexity based on Devices with Higher Functionality", and "Quantum Tunnelling Device Technology on Si"
1999 Workshop chair: 4th European MEL-ARI / NID and Nano-Computing Workshop, Duisburg
since 2001 Member of Sonderforschungsbereich 445 "Nanopartikel aus der Gasphase"
since 2004 Member of The Institute of Electronics, Information and Communication Engineers, Japan
2005 Workshop Chair: 20th Working group meeting "Epitaxy of III/V – semiconductors", Duisburg
2005/2007/2009 Programme/Conference Co-Chair: Topical Workshop on Heterostructure Microelectronics; Japan.
2008 Workshop Chair: 3rd Nanowire Growth Workshop, Duisburg
  • German Research Foundation (DFG)
  • IEEE Electron Device Letters, Transactions on Elecron Devices, Nanotechnology, Photonics Technology Letters
  • AIP: Journal on Applied Physics, Applied Physics Letters
  • IOP Nanotechnology
  • Springer - physica status solidi, Applied Physics A
  • Japanese Physical Society - Japanese Journal on Applied Physics
  • Elsevier - Journal on Crystal Growth, Solid-State Electronics
  • American Chemical Society: Nanoletters
  • heterostructure epitaxy using MBE and MOVPE
  • nanowires for devices for communication technology, solar cells, and thermoelectric
  • micro- and optoelectronic devices for communication