Publikationen 1997

früher

1997

später
  • H. Lakner, S. Ungerechts, A. Behres, A. Kohl, B. Opitz, K. Heime, J.Woitok:
    "Characterization of MOVPE grown InGaAsP superlattices for modulators by electron diffraction, X-ray diffraction and Z-contrast imaging"
    Journal of Crystal Growth 170 (1997) 732-737
  • H. Lakner, C. Mendorf, Bernd Bollig, Werner Prost, F.J. Tegude:
    "Determination of Interface Composition in III-V Heterojunction Devices (HBT and RTD) with Atomic Resolution using STEM Techniques"
    Materials Science and Engineering B44 (1997) 52-56
  • M. Stopka, S. Heisig, A. Leyk, W. Mertin, C. Mihalcea, W. Scholz, B. Sobisch und E. Oesterschulze:
    "Micromachined Probes for Scanning Electrostatic Force and Thermal Microscopy"
    Proc. of SPIE, Vol. 3009: Micromachining and Imaging, San Jose, CA/U.S.A. (1997)
  • F. Scholz, V. Härle, F. Steuber, A. Sohmer, H. Bolay, V. Syganow, A. Dörnen, J.-S. Im, A. Hangleiter, J. Y. Doz, P. Galtier, E. Rosencher, O. Ambacher, D. Brunner, H. Lakner:
    "Metalorganic vapor phase epitaxial growth of GaInN/GaN hetero structures and quantum wells"
    Mat. Res. Soc. Symp. Proc. Vol. 449 (1997) 3-14
  • W. Mertin, J. Bangert, A. Leyk (eingeladene Veröffentlichung):
    "Electrical Characterization of Micro- and Nanoscale Devices and Systems with Scanning Probe Techniques"
    Proc. of the Int. Conf. and Exibition Micro Materials (Micro Mat '97), Berlin (1997) 163-168
  • J. Bangert, S. Kasim, W. Mertin und E. Kubalek:
    "A novel method for time resolved characterization of micro magnetic stray fields with scanning probe microscopy"
    Surface and Interface Analysis, Vol. 25, 533-536 (1997)
  • A. Leyk, S. van Waasen, F.J. Tegude, E. Kubalek:
    "MMIC In-circuit and In-device Testing with a New High Frequency Scanning Force Microscope"
    Microelectron. Reliab., Vol. 37, No. 10/11 (1997) 1575-1578
  • J. Bangert, E. Kubalek:
    "Absolute quantitative time resolved voltage measurements within today´s integrated circuits via Electric Force Microscope-(EFM-)testing"
    Microelectron. Reliab., Vol. 37, No. 10/11 (1997) 1579-1582
  • H. Lakner (eingeladene Veröffentlichung):
    "EELS an Halbleiter-Heteroschichten im Feldemissions-STEM"
    Dreiländertagung 1997 für Elektronenmikroskopie, Regensburg, OPTIK Int. Journal for Light and Electron Optics, Supplement 7 (Vol. 106) (1997) 27
  • F. Schulze-Kraasch, H. Lakner:
    "Elektronenbeugung (CBED) im RTEM an InGaAsP"
    Dreiländertagung 1997 für Elektronenmikroskopie, Regensburg, OPTIK Int. Journal for Light and Electron Optics, Vol. 106, Suppl.7 (1997) 49
  • A. Radefeld, H. Lakner:
    "Untersuchung von inneren Grenzflächen von Halbleiter- Heterostrukturen mittels Elektronenbeugung im koherenten Bündel (CBED: Convergent Beam Electron Diffraction) Experiment und Simulation"
    Dreiländertagung 1997 für Elektronenmikroskopie, Regensburg, OPTIK Int . Journal for Light and Electron Optics, Supplement 7 (Vol. 106) (1997) 60
  • H. Lakner (eingeladene Veröffentlichung):
    "Subnanometer electron probes and their capabilities for internal interface characterization"
    , Microscopy & Microanalysis, Vol. 3, Suppl. 2 (1997) 643-644
  • A. Sohmer, J. Off, H. Bolay, V. Härle, V. Syganow, J. S. Im, V. Wagner, F. Adler, A. Hangleiter, A. Dörnen und F. Scholz, D. Brunner, O. Ambacher, H. Lakner ( eingeladene Veröffentlichung):
    GaInN/GaN-Heterostructures and Quantum Wells Grown by Metalorganic Vapor-Phase Epitaxy"
    MRS-Internet Journal of Nitride Semiconductor Research, Volume 2, Art. 14 (1997)
  • H. Lakner (eingeladene Veröffentlichung):
    "Analysis of Mesoscopic Semiconductor Structures by Field- Emission Scanning Transmission Electron Microscopy (STEM)"
    Proc. of. Int. Beijing Conf. and Exhibition on Instrumental Analysis ( BCEIA), A. Electron Microscopy, Shanghai/China (1997) Peking University Press, Beijing , ISBN 7-301-03461-X/O ·398
  • M. Heuken, C. von Eichel-Streiber, A.Behres, B. Schineller, K. Heime, C. Mendorf, G. Brockt and H. Lakner:
    "MOVPE Growth of InPSb/InAs Heterostructures for Mid-Infrared Emitters"
    Journal of Electronic Materials, Vol. 26, No. 10 (1997) 1221-1224
  • H. Lakner, G. Brockt, C. Mendorf, A. Radefeld, F. Scholz, V. Härle and A.Sohmer:
    "Characterization of MOVPE-Grown (Al,Ga,In)N Heterostructures by Quantitative Analytical Electron Microscopy"
    Journal of Electronic Materials, Vol. 26, No. 10 (1997) 1103-1108
  • W. Prost, U. Auer, P. Velling. G. Janßen, M. Agethen, M. Haase, H. Lakner , F.J. Tegude (eingeladene Veröffentlichung):
    "Novel Monolithic RTD/3-Terminal Device Combination on s.i. InP for Frequency Mulitplication"
    Proc. of the 26th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS), D. N. Buckley, S. H. G. Chu, H. Q. Hou, R. E. Sah and N. J. Deen, Editors, The Electrochemical Society, Pennington/U.S.A. (1997) 229-241
  • C. Mendorf, G. Brockt, Q. Liu, A. Behres, K. Heime, E. Kubalek, M. Heuken, H. Lakner:
    "Decomposition analysis of Gax In1-xAsy P1-y heterostructures by STEM"
    Inst. Phys. Conf. Ser. No 157 (1997) 251-256
  • C. Mendorf, G. Brockt, A. Behres, C. von Eichel-Streiber, K. Heime, M. Heuken, H. Lakner:
    "Characterization of InPSb Layers of different substrates (InAs or GaSb)"
    Inst. Phys. Conf. Ser. No 157 (1997) 299-302
  • G. Brockt, C. Mendorf, A. Radefeld, F. Scholz, H. Lakner:
    "STEM Characterization of MOVPE-grown (Al,Ga,In) N Quantum Wells& quot;
    Inst. Phys. Conf. Ser. No 157 (1997) 221-226
  • A. Radefeld, H. Lakner:
    "Electron diffraction from cross-sectional semiconductor heterointerfaces using subnanometer electron probes"
    Inst. Phys. Conf. Ser. No 157 (1997) 71-74
  • Q. Liu, A. Meinert, M. Heuken, H. Kalisch und H. Lakner:
    "Cathodoluminescence study of crystalline quality of ZnMgSSe/GaAs heterostructures"
    Inst. Phys. Conf. Ser. No 157 (1997) 665-668
  • C. Mendorf, A. Knauer, I. Rechenberg, Q. Liu, F. Schulze and H. Lakner:
    "Characterisation of decomposition in Gax In1-xAsyP1-y layers by Z-contrast imaging, EELS and CBED"
    Inst. Phys. Conf. Ser. No 160 (1997) 83-86
  • H. Lakner (eingeladene Veröffentlichung):
    "Advances in spatially resolved quantitative analysis of semiconductor heterostructures"
    Inst. Phys. Conf. Ser. No 160 (1997) 55-66
  • Q. Liu, H. Lakner, F. Scholz, and E. Kubalek:
    "Study of MOVPE grown GaInN/GaN Heterostructures by Cathodoluminescence"
    Inst. Phys. Conf. Ser. No 160 (1997) 91-94
  • Q. Liu, H. Lakner, A. Meinert, A. Sohmer, F. Scholz, E. Kubalek:
    "Cathodoluminescence study of cristalline quality of (Al, GA, In) N heterostructures"
    Material Science & Engineering B50 (1997) 245-250
  • F. Scholz, A. Sohmer, J. Off, V. Syganow, A. Dörnen, J.-S. Im, A. Hangleiter, H. Lakner (eingeladene Veröffentlichtung):
    "In incorporation efficiency and composition fluctuations in MOVPE grown GaInN/GaN hetero structures and quantum wells"
    Mat. Science & Engineering B50 (1997) 238-244
  • G.Lermann, T. Bischof, A. Materny, W. Kiefer, T. Kümmell, G. Bacher, A. Forchel, G.Landwehr
    "Resonant micro-Raman investigations of the ZnSe-LO splitting in II-VI semiconductor quantum wires"
    Journal of Applied Physics 81 (3), pp. 1446 - 1450, (1997)
  • R. Spiegel, G. Bacher, A. Forchel, B. Jobst, D. Hommel, G. Landwehr
    "Polarization dependent formation of biexcitons in CdZnSe/ZnSe quantum wells"
    Physical Review B 55, pp. 9866 - 9871, (1997)
  • T.Kümmell, G. Bacher, A. Forchel, J. Nürnberger, W. Faschinger, G. Landwehr, B. Jobst, D. Hommel
    "Fabrication of dry etched CdZnSe/ZnSe quantum wires by thermally assisted electron cyclotron resonance etching"
    Applied Physics Letters 71, pp. 344 - 346, (1997)
  • T. Kümmell, G. Bacher, A. Forchel, J. Nürnberger, W. Faschinger, G. Landwehr, B. Jobst, D. Hommel
    "Low Damage Thermally Assisted ECR Etch Technology for Wide Bandgap II-VI-Materials"
    Journal of Vacuum Science and Technology B15, pp. 2656 - 2660 (1997)
  • G. Lermann, T. Bischof, A. Materny, W. Kiefer, T. Kümmell, G. Bacher, A.Forchel, G. Landwehr
    "Wire width dependence of the LO-phonon splitting and photoluminescence energy in ZnSe/Zn0.65Cd0.35Se quantum wires"
    Physical Review B 56, pp. 7469 - 7476, (1997)
  • G. Bacher, R. Spiegel, T. Kümmell, O. Breitwieser, A. Forchel, B. Jobst, D. Hommel, G. Landwehr
    "Relaxation of hot excitons in inhomogeneously broadened CdZnSe/ZnSe nanostructures"
    Physical Review B 56, pp. 6868 - 6870, (1997)
  • M. Tamura, T. Ando, N. Nunoya, S. Tamura, S. Arai, G. Bacher
    "Surface Damage in GaInAsP/InP wire Structures by Cl2/H2-ECR Dry Etching"
    Proceedings 9th International Conference on InP and Related Materials, pp. 582 - 585, (1997)
  • T. Kojima, M. Tamura, X-Y. Jia, H. Nakaya, T. Ando, S. Tanaka, S. Tamura, S.Arai, G. Bacher
    "Anisotropic Polarization Properties of GaInAsP/InP Compressively-Strained Quantum-Wire Structures"
    Proceedings 9th International Conference on InP and Related Materials, pp. 226 - 229, (1997)
  • V. Ptatschek, B. Schreder, K. Herz, U. Hilbert, W. Ossau, G. Schottner, O. Rahäuser, Bischof, G. Lermann, A. Materny, W. Kiefer, G. Bacher, A. Forchel, D.Su, M. Giersig, G. Müller, L. Spanhel
    " Sol-Gel Synthesis and Spectroscopic Properties of Nanocrystalline CdSe-Films"
    Journal of Physical Chemistry B 101, pp. 8898 - 8906, (1997)
  • D. Eisert, G. Bacher, M. Legge, A. Forchel, J. Nürnberger, K. Schüll, W. Faschinger, G. Landwehr
    "Wavelength control in II-VI Laser Diodes with First Order Distributed Bragg Reflectors"
    Applied Physics Letters 71, pp. 1026 - 1028, (1997)
  • K. Ohkawa, M. Behringer, H. Wenisch, M. Fehrer, B. Jobst, D. Hommel, M. Kuttler, M. Strassburg, D. Bimberg, G. Bacher, D. Tönnies, A. Forchel
    "ZnSe-Based Laser Diodes and LEDs Grown on ZnSe and GaAs Substrates"
    phys. stat. sol. (b) 202, pp. 683 - 693, (1997)
  • K. Herz, T. Kümmell, G. Bacher, A. Forchel, B. Jobst, D. Hommel, G. Landwehr
    "Biexciton formation in CdZnSe/ZnSe quantum dot and quantum well structures"
    Physical Review B 56, pp. 15261 - 15263, (1997)
  • H.P. Wagner, M. Kühnelt, G. Wein, B. Hahn, W. Gebhardt, D.Eisert, G. Bacher,A. Forchel
    "Phase matched second harmonic generation using a c(2) modulated ZnTe/ZnSe optical waveguide"
    Journal of Luminescence 72-74, pp. 87 - 89, (1997)
  • K. Herz, T. Kümmell, G. Bacher, A. Forchel, B. Jobst, D. Hommel, G. Landwehr
    "Biexcitons in low dimensional CdZnSe/ZnSe structures"
    phys. stat. sol (a) 164, pp. 205 - 208, (1997)
  • G. Lermann, T. Bischof, B. Schreder, A. Materny, W. Kiefer, T. Kümmell, G. Bacher, A. Forchel, G. Landwehr
    "Raman spectroscopy on CdZnSe/ZnSe quantum wires"
    Ber. Deutsche Bunsengesellschaft Physikalische Chemie 101, pp. 1665 - 1667 (1997)

 

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