Publikationsliste von Assoc. Prof. Dr. Subhabrata Dhar |
2010 |
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8 - Gd-doped GaN studied with element specifity: very small polarization of Ga, paramagnetism of Gd and the formation of magnetic clusters
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A. Ney, T. Kammermeier, K. Ollefs, V. Ney, S. Ye, S. Dhar, K. H. Ploog, M. Rver, J. Malindretos, A. Rizzi, F. Wilhelm, A. Rogalev
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J. Magn. Magn. Mater. 322, 1162 (2010) DOI: 10.1016/j.jmmm.2009.06.033
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2008 |
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7 - Metastable magnetism and memory effects in dilute magnetic semiconductors
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A. Ney, R. Rajaram, T. Kammermeier, V. Ney, S. Dhar, K. H. Ploog and S. S. P. Parkin
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J. Phys.: Condens. Matter 20, 285222 (2008) DOI: 10.1088/0953-8984/20/28/285222
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6 - Element specific magnetic properties of Gd:GaN: very small polarization of Ga and paramagnetism of Gd
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A. Ney, T. Kammermeier, V. Ney, S. Ye, K. Ollefs, E. Manuel, S. Dhar, K. H. Ploog, E. Arenholz, F. Wilhelm, and A. Rogalev
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Phys. Rev. B 77, 233308 (2008) DOI: 10.1103/PhysRevB.77.233308
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5 - Paramagnetic and ferromagnetic resonance studies on dilute magnetic semiconductors based on GaN
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T. Kammermeier, S. Dhar , V. Ney, E. Manuel, A. Ney, K. H. Ploog, F.-Y. Lo, A. Melnikov, A. D. Wieck
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phys. stat. sol. (a) 205 (8), 1872 (2008) DOI: 10.1002/pssa.200824023
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2007 |
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4 - Experimental investigation of the metastable magnetic properties of Cr-doped InN
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A. Ney, R. Rajaram, S.S.P. Parkin, T. Kammermeier, S. Dhar
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Phys. Rev. B 76, 035205 (2007) DOI: 10.1103/PhysRevB.76.035205
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3 - Element specific investigations of the structural and magnetic properties of Gd:GaN
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A. Ney, T. Kammermeier, E. Manuel, V. Ney, S. Dhar, K.H. Ploog, F. Wilhelm, and A. Rogalev
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Appl. Phys. Lett. 90, 252515 (2007) DOI: 10.1063/1.2750542
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2006 |
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2 - Magnetic properties of epitaxial CrN films
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A. Ney, R. Rajaram, S. S. P. Parkin, T. Kammermeier, S. Dhar
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Appl. Phys. Lett. 89, 112504 (2006) DOI: 10.1063/1.2352795
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1 - Ferromagnetism and colossal magnetic moment in Gd-focused ion-beam-implanted GaN
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S. Dhar, T. Kammermeier, A. Ney, L. Perez, K. H. Ploog, A. Melnikov, and A. D. Wieck
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Appl. Phys. Lett. 89, 062503 (2006) DOI: 10.1063/1.2267900
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